CN101980391A - Light-emitting diode and manufacturing method thereof - Google Patents
Light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN101980391A CN101980391A CN2010102859488A CN201010285948A CN101980391A CN 101980391 A CN101980391 A CN 101980391A CN 2010102859488 A CN2010102859488 A CN 2010102859488A CN 201010285948 A CN201010285948 A CN 201010285948A CN 101980391 A CN101980391 A CN 101980391A
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Abstract
The invention discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode comprises a substrate and a light-emitting diode tube core positioned on the substrate, wherein more than one reflecting pits are formed on one side, which faces to the light-emitting diode tube core, of the substrate; and the side walls of the reflecting pits comprise more than one reflecting bulges. Correspondingly, the invention also provides the manufacturing method of the light-emitting diode, which comprises the following steps of: providing the substrate, and forming cone-shaped pits on the substrate; forming the reflecting bulges on the side walls of the cone-shaped pits; and forming the light-emitting diode tube core on the substrate. The reflecting bulges are used for generating diffuse reflection to ensure that the light rays projected to the substrate from different directions can be reflected to a light-emitting surface of the light-emitting diode, thereby improving the light-emitting efficiency of the light-emitting diode. The manufacturing method of the light-emitting diode has a simple manufacturing process.
Description
Technical field
The present invention relates to technical field of semiconductors, more specifically, the present invention relates to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED) thus be response current and be excited and produce the semiconductor device of versicolor light.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
Yet semiconductor light-emitting-diode exists the low problem of luminous efficiency at present.For the light-emitting diode of un-encapsulated, its light extraction efficiency generally has only a few percent.Lot of energy accumulates in device inside can not outgoing, has both caused energy dissipation, influences the useful life of device again.Therefore, the light extraction efficiency of raising semiconductor light-emitting-diode is most important.
Based on above-mentioned application demand, the method that many kinds improve the light-emitting diode light extraction efficiencies is applied in the device architecture, surface roughening method for example, metallic mirror structure etc.Publication number is that the Chinese patent application of CN1858918A discloses a kind of light-emitting diode, and described light-emitting diode lower surface forms full angle reflector structure, can improve the light-emitting diode light extraction efficiency.Yet this method need form multilayer and pile up the membrane structure that forms, complex manufacturing technology by high refractive index layer and low-index layer on substrate.
Summary of the invention
The problem that the present invention solves provides a kind of light-emitting diode and manufacture method thereof, improves the light extraction efficiency of light-emitting diode.
For addressing the above problem, the invention provides a kind of light-emitting diode, comprise substrate, LED core on the described substrate, wherein, described substrate is formed with more than one towards a side of LED core and reflects pit, and the sidewall of described reflection pit comprises more than one reflection protrusion.
Correspondingly, the present invention also provides a kind of manufacturing method for LED to comprise: substrate is provided, forms pyramidal pits on substrate; On the sidewall of pyramidal pits, form reflection protrusion; On substrate, form LED core.
Compared with prior art, the present invention has the following advantages:
1. substrate comprises that sidewall is provided with the reflection pit of a plurality of reflection protrusion, described reflection protrusion is used to produce diffuse reflection, make the light that projects to the different directions of substrate all can reflex to the exiting surface of light-emitting diode, thereby improved the light extraction efficiency of light-emitting diode.
2. manufacturing method for LED, manufacturing process is comparatively simple.
Description of drawings
Fig. 1 is the cross-sectional view of light-emitting diode of the present invention;
Fig. 2 is the flow chart of this manufacturing method for LED one execution mode;
Fig. 3 is the schematic flow sheet of step s1 one embodiment shown in Figure 2;
Fig. 4 is the schematic flow sheet of step s2 one embodiment shown in Figure 2;
Fig. 5 to Figure 11 is the side schematic view of light-emitting diode one embodiment of method for manufacturing light-emitting formation of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Just as stated in the Background Art, for improving the light extraction efficiency of light-emitting diode, the light-emitting diode of prior art need form multilayer and pile up the membrane structure that forms by high refractive index layer and low-index layer on substrate, but the complex manufacturing technology of described membrane structure.
At the problems referred to above, the present inventor provides a kind of light-emitting diode, the substrate of described light-emitting diode is provided with the reflection pit that is used for reflection ray, the sidewall of described reflection pit is provided with a plurality of reflection protrusion, described reflection protrusion can make the light generation diffuse reflection that projects substrate, thereby make the light of different directions all can reflex to the light direction of light-emitting diode, thereby improved the light extraction efficiency of light-emitting diode.
With reference to figure 1, show the cross-sectional view of light-emitting diode of the present invention.As shown in Figure 1, described light-emitting diode comprises:
Described reflection pit 103 can reflection ray, because the sidewall of described reflection pit 103 is provided with a plurality of reflection protrusion, described reflection protrusion can produce diffuse reflection, can make the light of the different directions that projects substrate all reflex to the exiting surface of light-emitting diode, thereby improve the light extraction efficiency of light-emitting diode;
Be formed with resilient coating 104, active layer 105, cap layer 106 on described substrate 102 and the epitaxial loayer 110 successively, described resilient coating 104, active layer 105 and cap layer 106 have constituted LED core; In specific embodiment, the gallium nitride material that described resilient coating 104 mixes for the N type, described active layer 105 is the multiple quantum well active layer structure, particularly, adopts the InGaN material to constitute, the gallium nitride material that described cap layer 106 mixes for the P type;
Described light-emitting diode comprises that also the degree of depth extends to the opening 111 at resilient coating 104 tops at least from contact layer 107, and the bottom of described opening is provided with second electrode 108, and described second electrode 108 is used to realize the electrical connection of light-emitting diode and power cathode.Particularly, described second electrode 108 adopts the conducting metal of titanium, gold or aluminium etc.
Correspondingly, the present invention also provides a kind of manufacturing method for LED, with reference to figure 2, shows the flow chart of this manufacturing method for LED one execution mode.Described manufacturing method for LED comprises:
S1 provides substrate, forms the reflection pit that sidewall comprises reflection protrusion on described substrate;
S2 forms LED core on substrate.
To Figure 11, show the side schematic view of light-emitting diode one embodiment of method for manufacturing light-emitting formation of the present invention with reference to figure 5.Below in conjunction with accompanying drawing each step is described in detail.
For step s1, with reference to figure 3, show the flow chart of step s1 one embodiment shown in Figure 2, described step s1 comprises:
Step s11 provides substrate;
Step s12 forms hard mask on described substrate;
Step s13 is the described substrate of mask etching with hard mask, forms the reflection pit;
Step s14 removes hard mask;
Step s15, adhered particles on the sidewall of described reflection pit;
Step s16 is the described reflection pit of a mask etching sidewall with described particle, forms reflection protrusion on reflection pit sidewall.
Execution in step s12, as shown in Figure 5, deposited hard mask layer on substrate 201, by engraving method that hard mask layer is graphical then, form hard mask 202, particularly, described substrate can adopt crystalline material silicon such as silicon, silicon nitride or sapphire, and the material of described hard mask layer is a silicon dioxide.
Execution in step s13, as shown in Figure 6, with hard mask 202 is the described substrate 201 of mask etching, in substrate 201, form a plurality of reflection pits 203, the etching area of each reflection pit 203 on substrate 201 surfaces is 10 to 100 square microns during etching, etch depth is less than or equal to 1.5 microns during etching, thereby forms inverted pyramidal pits in described substrate, and the vertex angle theta of described pyramidal pits is 75 °～105 °; Particularly, adopt anisotropic etch method to carry out etching, for example,, adopt the mixed solution of sulfuric acid and phosphoric acid to carry out wet etching for Sapphire Substrate.
Execution in step 14 is removed hard mask 202 by hydrofluoric acid solution, thereby forms the substrate 201 with a plurality of pyramidal pits;
Execution in step s15 as shown in Figure 7, by the Electrostatic Absorption method, adsorbs a plurality of particles 204 equably on the sidewall of a plurality of reflection pits 203 of substrate 201, the material of described particle 204 adopts silicon or silicon dioxide.
Execution in step s16 as shown in Figure 8, is a mask with described particle 204, by the sidewall of soft ionomer dry etching method etching reflection pit 203, forms a plurality of reflection protrusion 205 on the sidewall of described reflection pit 203; Particularly, (radio-frequency (RF) energy that soft ionomer dry etching method adopts is lower, usually less than 500W for Reactive Ion Etch, RIE) etching phase ratio with the reactive ion etching of routine.
Need to prove, the particle that adsorbs in step s15 is big more, radio-frequency (RF) energy in step s16 in the soft ionomer dry etching is high more, can form the big more reflection protrusion of roughness, the reflection protrusion that roughness is big more more helps making light to produce diffuse reflection, more multidirectional incident ray is reflexed on the light direction of light-emitting diode, thereby improved the light extraction efficiency of light-emitting diode
For step s2, with reference to figure 4, show the schematic flow sheet that step s2 one shown in Figure 2 implements, described step s2 comprises:
Step s21 fills epitaxial film materials in the pyramidal pits of substrate, fill up described pyramidal pits at least, forms epitaxial loayer; On the surface of the surface of substrate and epitaxial loayer, form LED core and contact layer successively;
Step s22 forms first electrode and second electrode;
Step s23 forms heat dissipating layer below substrate.
Execution in step s21, as shown in Figure 9, adopt metallo-organic compound chemical vapour deposition (CVD) (Metal-organic Chemical Vapor Deposition, MOCVD) method deposit epitaxial layers material in the pyramidal pits of substrate 201, until filling up described pyramidal pits, thereby form epitaxial loayer 206, particularly, described epitaxial loayer 206 is aluminium nitride or gallium nitride material; Successively at surface deposition resilient coating 207, active layer 208, the cap layer 209 of substrate 201 surface and epitaxial loayer 206, the gallium nitride material that described resilient coating 207 mixes for the N type, described active layer 208 is the multiple quantum well active layer of InGaN material, the gallium nitride material that described cap layer 209 mixes for the P type, described resilient coating 207, active layer 208, cap layer 209 constitute LED core.Adopt the physical vapor deposition (PVD) method to deposit contact layer 210 on LED core, described contact layer 210 is conductive metallic materials such as gold or nickel.
Execution in step s22, as shown in figure 10, deposits conductive material on contact layer 210, the method by photoetching and the described electric conducting material of etching forms first electrode 211 afterwards; Form the degree of depth extends to resilient coating 207 tops at least from contact layer 210 opening 213 by engraving method, deposits conductive material in opening 213, method by photoetching and the described electric conducting material of etching forms second electrode 212 afterwards, particularly, described first electrode 211 adopts the conducting metal of nickel, gold or aluminium etc.; Described second electrode 212 adopts the conducting metal of titanium, gold or aluminium etc.
Execution in step s23, as shown in figure 11, below substrate 201, form heat dissipating layer 214, usually adopt the thermocompression bonding mode to form heat dissipating layer 214 below substrate 201, the material of described heat dissipating layer 214 comprises any one in titanium, aluminium, silver, gold and the alloy thereof, preferably, before forming heat dissipating layer 214, from substrate 201 bottoms substrate 201 is carried out reduction processing, particularly, substrate 201 thickness behind the attenuate are 20 to 50 microns.
Described manufacturing method for LED also comprises processing steps such as cutting, encapsulation, and is identical with prior art, repeats no more.
So far, light-emitting diode of the present invention promptly completes.
To sum up, in the light-emitting diode of the present invention, described substrate comprises that sidewall is provided with the reflection pit of a plurality of reflection protrusion, described reflection protrusion can increase the reflecting surface area of reflection pit, can make to project the exiting surface that all reflexes to light-emitting diode to most of light of substrate, thereby improve the light extraction efficiency of light-emitting diode.
Manufacturing method for LED of the present invention, manufacturing process are comparatively simple.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (22)
1. a light-emitting diode is characterized in that, comprising: substrate, be positioned at the LED core on the described substrate, wherein, described substrate is formed with more than one towards a side of LED core and reflects pit, and the sidewall of described reflection pit comprises more than one reflection protrusion.
2. light-emitting diode as claimed in claim 1 is characterized in that, described substrate is silicon, sapphire or carborundum.
3. light-emitting diode as claimed in claim 1 is characterized in that, the reflection pit is inverted pyramidal structure, and the drift angle of described pyramidal structure is 75 °～105 °.
4. light-emitting diode as claimed in claim 3 is characterized in that, the aperture area of the reflection pit of described pyramidal structure is 10 to 100 square microns.
5. light-emitting diode as claimed in claim 3 is characterized in that, the hole of described reflection pit is less than or equal to 1.5 microns deeply.
6. light-emitting diode as claimed in claim 1 is characterized in that, also comprises the epitaxial loayer that is filled in the substrate reflection pit, and described LED core is positioned on the epitaxial loayer.
7. light-emitting diode as claimed in claim 6 is characterized in that, also comprises the contact layer that is positioned on the LED core.
8. light-emitting diode as claimed in claim 7 is characterized in that, also comprises first electrode that is positioned on the contact layer, and the degree of depth extends to the opening of breaker topping at least from contact layer, and described open bottom is provided with second electrode.
9. as each described light-emitting diode of claim 1～8, it is characterized in that, also comprise the heat dissipating layer that is positioned at the substrate below.
10. a manufacturing method for LED is characterized in that, comprising: substrate is provided, forms pyramidal pits on substrate; On the sidewall of pyramidal pits, form reflection protrusion; On substrate, form LED core.
11. manufacturing method for LED as claimed in claim 10 is characterized in that, the described step that forms pyramidal pits in the upper surface of substrate comprises: substrate is provided; On described substrate, form hard mask; With hard mask is the described substrate of mask etching, forms the reflection pit; Remove hard mask.
12. manufacturing method for LED as claimed in claim 11 is characterized in that, the described step that forms reflection protrusion on the sidewall of pyramidal pits comprises adhered particles on the sidewall of described reflection pit; With described particle is the described reflection pit of mask etching sidewall, forms reflection protrusion on reflection pit sidewall.
13. manufacturing method for LED as claimed in claim 11 is characterized in that, the material of described hard mask is a silicon dioxide.
14. manufacturing method for LED as claimed in claim 13, it is characterized in that, described substrate is a sapphire, is the described substrate of mask etching with hard mask, and the step that forms the reflection pit comprises: by the described substrate of mixed solution wet etching of sulfuric acid and phosphoric acid.
15. manufacturing method for LED as claimed in claim 14 is characterized in that, the step of the hard mask of described removal comprises by hydrofluoric acid solution removes hard mask.
16. manufacturing method for LED as claimed in claim 12 is characterized in that, in the step of adhered particles, adopts the Electrostatic Absorption method to make particle adhesion to the sidewall of reflection pit on the sidewall of described reflection pit.
17. manufacturing method for LED as claimed in claim 16 is characterized in that described particle is silicon grain or silica dioxide granule.
18. manufacturing method for LED as claimed in claim 10, it is characterized in that, described step in formation LED core on the substrate comprises: fill epitaxial film materials in the pyramidal pits of substrate, fill up described pyramidal pits at least, form epitaxial loayer; On substrate surface and epi-layer surface, form LED core, contact layer successively; Form first electrode and second electrode; Below substrate, form heat dissipating layer.
19. manufacturing method for LED as claimed in claim 18, it is characterized in that, the step of described formation first electrode and second electrode comprises: deposition first electric conducting material above contact layer, and the method by photoetching and described first electric conducting material of etching forms first electrode afterwards; Form the degree of depth extends to breaker topping at least from contact layer opening by engraving method, deposition second electric conducting material in opening, the method by photoetching and described second electric conducting material of etching forms second electrode afterwards.
20. manufacturing method for LED as claimed in claim 19 is characterized in that, first electrode material is nickel, gold or aluminium; The material of second electrode is titanium, gold or aluminium.
21. manufacturing method for LED as claimed in claim 18 is characterized in that, before forming heat dissipating layer below the substrate, from the substrate bottom substrate is carried out reduction processing.
22. manufacturing method for LED as claimed in claim 21 is characterized in that, the substrate thickness after the reduction processing is 20 to 50 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102859488A CN101980391A (en) | 2010-09-14 | 2010-09-14 | Light-emitting diode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102859488A CN101980391A (en) | 2010-09-14 | 2010-09-14 | Light-emitting diode and manufacturing method thereof |
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| CN101980391A true CN101980391A (en) | 2011-02-23 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102024898A (en) * | 2010-11-03 | 2011-04-20 | 西安神光安瑞光电科技有限公司 | LED (light-emitting diode) and manufacturing method thereof |
| CN102437258A (en) * | 2011-12-06 | 2012-05-02 | 上海蓝光科技有限公司 | Patterned substrate for controlling gallium nitride nucleating growth position and preparation method thereof |
| CN103199165A (en) * | 2012-01-05 | 2013-07-10 | 昆山中辰矽晶有限公司 | Light-emitting diode substrate, processing method thereof and light-emitting diode |
| CN104218160A (en) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method thereof |
| JP2018061057A (en) * | 2013-10-11 | 2018-04-12 | 王子ホールディングス株式会社 | Semiconductor light emitting element substrate and semiconductor light emitting element |
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| US20090078954A1 (en) * | 2007-09-21 | 2009-03-26 | Shim Sang Kyun | Semiconductor light emitting device and method for manufacturing the same |
| CN101567415A (en) * | 2009-06-04 | 2009-10-28 | 上海蓝光科技有限公司 | Manufacturing method for light-emitting diode chip substrate structure |
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| JP2002141283A (en) * | 2000-08-08 | 2002-05-17 | Matsushita Electric Ind Co Ltd | Semiconductor substrate, its producing method, semiconductor device and method for patterning |
| EP1858090A2 (en) * | 2006-05-15 | 2007-11-21 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode having multi-pattern structure |
| US20090078954A1 (en) * | 2007-09-21 | 2009-03-26 | Shim Sang Kyun | Semiconductor light emitting device and method for manufacturing the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024898A (en) * | 2010-11-03 | 2011-04-20 | 西安神光安瑞光电科技有限公司 | LED (light-emitting diode) and manufacturing method thereof |
| CN102024898B (en) * | 2010-11-03 | 2013-03-27 | 西安神光安瑞光电科技有限公司 | LED (light-emitting diode) and manufacturing method thereof |
| CN102437258A (en) * | 2011-12-06 | 2012-05-02 | 上海蓝光科技有限公司 | Patterned substrate for controlling gallium nitride nucleating growth position and preparation method thereof |
| CN102437258B (en) * | 2011-12-06 | 2014-08-06 | 上海蓝光科技有限公司 | Patterned substrate for controlling gallium nitride nucleating growth position and preparation method thereof |
| CN103199165A (en) * | 2012-01-05 | 2013-07-10 | 昆山中辰矽晶有限公司 | Light-emitting diode substrate, processing method thereof and light-emitting diode |
| CN104218160A (en) * | 2013-05-30 | 2014-12-17 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method thereof |
| JP2018061057A (en) * | 2013-10-11 | 2018-04-12 | 王子ホールディングス株式会社 | Semiconductor light emitting element substrate and semiconductor light emitting element |
| CN110047981A (en) * | 2013-10-11 | 2019-07-23 | 王子控股株式会社 | Semiconductor light-emitting element substrate and semiconductor light-emitting elements |
| JP2019165261A (en) * | 2013-10-11 | 2019-09-26 | 王子ホールディングス株式会社 | Substrate for semiconductor light-emitting element, and semiconductor light-emitting element |
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Application publication date: 20110223 |