KR20130007083A - The light emitting device and the mathod for manufacturing the same - Google Patents
The light emitting device and the mathod for manufacturing the same Download PDFInfo
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- KR20130007083A KR20130007083A KR1020110063445A KR20110063445A KR20130007083A KR 20130007083 A KR20130007083 A KR 20130007083A KR 1020110063445 A KR1020110063445 A KR 1020110063445A KR 20110063445 A KR20110063445 A KR 20110063445A KR 20130007083 A KR20130007083 A KR 20130007083A
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- Prior art keywords
- light emitting
- rod
- layer
- semiconductor layer
- emitting device
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims description 77
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- 238000005530 etching Methods 0.000 claims description 12
- -1 Si 3 N 4 Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
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- 238000013508 migration Methods 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 144
- 239000000463 material Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
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- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
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- 239000007769 metal material Substances 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The light emitting device according to the present invention comprises a conductive substrate, a plurality of rod-shaped light emitting structures protruding from the conductive substrate, spaced apart from each other, a plurality of reflective patterns formed in a spaced space between the plurality of rod-shaped light emitting structures, And a transmissive electrode layer covering the rod-shaped light emitting structure at the same time. Therefore, by forming a plurality of rod-shaped light emitting structures in the light emitting device, constructive interference between the light emitting structures can be induced to improve light emission efficiency. In addition, by forming a reflection pattern in the spaced space of the light emitting structure scattered light can further improve the luminous efficiency.
Description
The present invention relates to a light emitting device.
Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. Recently, light emitting diodes (LEDs) have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination. Recently, light emitting diodes Can also be implemented.
Luminance of the light emitting diode may include various conditions such as an active layer structure, a light extraction structure capable of effectively extracting light to the outside, a semiconductor material used for the light emitting diode, a size of a chip, and a type of molding member surrounding the light emitting diode. Depends on.
The technical problem to be achieved by the present invention is to provide a structure of a new light emitting device.
On the other hand, the present invention is to provide a structure of a light emitting device that can improve the luminous efficiency.
The light emitting device according to the present invention includes a conductive substrate, a plurality of rod-shaped light emitting structures protruding from the conductive substrate, spaced apart from each other, a plurality of reflective patterns formed in spaced spaces between the plurality of rod-shaped light emitting structures, And a light transmitting electrode layer covering the rod-shaped light emitting structure at the same time.
Each of the rod-shaped light emitting structures may have an active layer between a first conductive semiconductor layer and a second conductive semiconductor layer, and the second conductive semiconductor layer may be disposed on the conductive substrate.
The distance between the centers between the rod-shaped light emitting structures may satisfy d1 = λ x (2k + 1) / 2.
(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is an integer).
The reflective pattern may be irregularly formed.
The reflective pattern may be formed by ion migration of an alloy containing silver.
The reflective pattern may be formed by processing the conductive substrate exposed to the separation space.
An insulating layer may be formed in the spaced space between the rod-shaped light emitting structures, and an upper surface of the insulating layer may support the light transmitting electrode layer.
The insulating layer may include at least one of Al 2 O 3 , Si 3 N 4 , TiO 2 , ZrO 2 , CeF 3 , HfO 2 , MgO, Ta 2 O 5 , ZnS or PbF 2 .
The first conductive semiconductor layers of the plurality of light emitting structures may be connected to each other.
On the other hand, the method of manufacturing a light emitting device according to the present invention comprises the steps of sequentially growing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a support substrate, a plurality of rod type by etching from the second conductive semiconductor layer Forming a light emitting structure, attaching a conductive substrate on the plurality of rod-type light emitting structures, separating the support substrate from the plurality of rod-type light emitting structures, and separating spaces between the plurality of rod-type light emitting structures. Forming a reflective pattern, and forming a transmissive electrode layer on the first conductive semiconductor layer of the plurality of rod-shaped light emitting structures.
The forming of the light emitting structure may include forming a plurality of mask patterns arranged in a matrix form on the second conductive semiconductor layer, and etching the mask pattern to form the plurality of rod type light emitting structures. can do.
The forming of the plurality of rod-shaped light emitting structures may be performed by etching the mask pattern to form a plurality of the rod-shaped light emitting structures that are uniformly spaced apart from each other.
The center distance between the rod-shaped light emitting structures may satisfy d1 = λ x k.
(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is a positive integer.)
The forming of the reflective pattern may include forming a mask on the rod-shaped light emitting structure, forming a metal layer on the conductive substrate exposed by the mask, and heat treating the metal layer to form the metal pattern by ion migration. It may include forming a.
The metal layer may be formed of an alloy containing silver.
Forming a mask on the rod-shaped light emitting structure, and etching the conductive substrate exposed by the mask to form the reflective pattern.
After the reflective pattern is formed, the method may further include forming an insulating layer in the separation space.
According to the present invention, by forming a plurality of rod-shaped light emitting structure on the light emitting device can be induced by constructive interference between the light emitting structure to improve the light emitting efficiency. In addition, by forming a reflection pattern in the spaced space of the light emitting structure scattered light can further improve the luminous efficiency.
1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view illustrating the effect of the light emitting device of FIG. 1.
3 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
4 to 11 are cross-sectional views illustrating a method of manufacturing the light emitting device of FIG. 1.
12 is a cross-sectional view of a light emitting device package to which the light emitting device of FIG. 1 is applied.
DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.
Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless specifically stated otherwise.
The present invention relates to a light emitting device having a plurality of rod-shaped light emitting structures on a conductive substrate.
1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing the effect of the light emitting device of FIG.
Referring to FIG. 1, the
The
A bonding layer (not shown) may be formed on the
A plurality of rod-type
The rod-shaped
Each
Specifically, the
The
The
A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the
The first conductivity
The first conductivity
The undoped semiconductor layer and the first
In addition, when the first
Meanwhile, p-type and n-type dopants may be doped into the first conductivity-
A
The
The
The
In this case, a
The
The
The
On the other hand, the separation distance of the
The center distance d1 of the
[Relational expression]
d1 = λ x k
In this case, λ is defined as the wavelength of the emission light of the
As such, when the
Accordingly, as shown in FIG. 2, the light b coupled with the light emitted from the neighboring
In addition, when the light emitted from the
Therefore, while generating strong light by constructive interference, light is scattered in the
Hereinafter, a
Since the
The
The insulating
The insulating
At this time, by controlling the refractive index of the insulating
Although the
Hereinafter, a process of manufacturing the light emitting device of the present invention will be described with reference to FIGS. 4 to 11.
First, as shown in FIG. 4, a plurality of
The
A first
The first
The undoped semiconductor layer and the first
In addition, when the first
The
A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the
The second conductivity
Meanwhile, p-type and n-type dopants may be doped into the first conductivity-
The first
Next, as shown in FIG. 5, a
The
The
As described above, the matrix
In this case, the cross-section of the
Meanwhile, the
Next, as shown in FIG. 7, the semiconductor layers 120, 130, and 140 are etched with respect to the
In this case, the etching may be laser etching, or alternatively, the etching may be wet or dry chemical etching.
Next, as shown in FIG. 8, the
The
When the
The laser process may use, for example, an Nd: YAG laser, but is not limited thereto.
Next, as shown in FIG. 9, a
The
The
Next, as shown in FIG. 10, the
The heat treatment temperature is a temperature which does not affect the
Preferably, the heat treatment temperature is in the range of about 300 ℃ to 600 ℃, the heat treatment process may be performed for about 30 to 300 seconds.
The higher the heat treatment temperature, the smaller the size of the
Next, as shown in FIG. 11, the
In FIG. 1, a simplified structure of the
In addition, in the process, the
When the
Hereinafter, a light emitting device package to which the
12 is a cross-sectional view of a light emitting device package to which the light emitting device of the present invention is applied.
Referring to FIG. 12, the light emitting
The
The
The
The
In the light emitting
A plurality of light emitting device packages 400 according to the embodiment are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, etc., which are optical members, are disposed on a path of light emitted from the light emitting
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.
Rod-type
Claims (17)
A plurality of rod-shaped light emitting structures protruding from the conductive substrate and spaced apart from each other;
A plurality of reflective patterns formed in spaced spaces between the plurality of rod-shaped light emitting structures, and
Integrated light transmitting electrode layer covering the rod-shaped light emitting structure at the same time
Light emitting device comprising a.
Wherein each of the rod-shaped light emitting structures has an active layer between a first conductive semiconductor layer and a second conductive semiconductor layer, wherein the second conductive semiconductor layer is disposed on the conductive substrate.
And a distance between centers between the rod-shaped light emitting structures satisfies d1 = lambda xk.
(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is a positive integer.)
The reflective pattern is irregularly formed light emitting device.
The reflective pattern is formed by ion migration of an alloy containing silver.
The reflective pattern is formed by processing the conductive substrate exposed to the separation space.
An insulating layer is formed in the spaced space between the rod-shaped light emitting structure,
The upper surface of the insulating layer is a light emitting device for supporting the transmissive electrode layer.
The insulating layer includes at least one of Al 2 O 3 , Si 3 N 4 , TiO 2 , ZrO 2 , CeF 3 , HfO 2 , MgO, Ta 2 O 5 , ZnS or PbF 2 .
The first conductive semiconductor layers of the plurality of light emitting structures are connected to each other.
Etching the second conductive semiconductor layer to form a plurality of rod type light emitting structures;
Attaching a conductive substrate on the plurality of rod-shaped light emitting structures;
Separating the support substrate from the plurality of rod-type light emitting structures;
Forming a reflective pattern in the spaced space between the plurality of rod-type light emitting structures, and
Forming a transmissive electrode layer on the first conductive semiconductor layer of the plurality of rod type light emitting structures
Method of manufacturing a light emitting device comprising a.
Forming the light emitting structure,
Forming a plurality of mask patterns arranged in a matrix on the second conductivity type semiconductor layer, and
And etching the mask pattern to form the plurality of rod-shaped light emitting structures.
Forming the plurality of rod-shaped light emitting structures,
And a plurality of the rod-shaped light emitting structures spaced apart from each other by etching the mask pattern.
The center distance between the rod-shaped light emitting structure is formed so as to satisfy d1 = λ xk.
(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is a positive integer.)
Forming the reflective pattern,
Forming a mask on the rod-shaped light emitting structure;
Forming a metal layer over the conductive substrate exposed by the mask, and
Heat-treating the metal layer to form the metal pattern by ion migration.
The metal layer is a method of manufacturing a light emitting device formed of an alloy containing silver.
Forming a mask on the rod-shaped light emitting structure, and
And etching the conductive substrate exposed by the mask to form the reflective pattern.
And forming an insulating layer in the spaced space after the reflective pattern is formed.
Priority Applications (1)
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KR1020110063445A KR20130007083A (en) | 2011-06-29 | 2011-06-29 | The light emitting device and the mathod for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020110063445A KR20130007083A (en) | 2011-06-29 | 2011-06-29 | The light emitting device and the mathod for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
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KR20130007083A true KR20130007083A (en) | 2013-01-18 |
Family
ID=47837724
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108565322A (en) * | 2018-06-01 | 2018-09-21 | 广东工业大学 | A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips |
-
2011
- 2011-06-29 KR KR1020110063445A patent/KR20130007083A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108565322A (en) * | 2018-06-01 | 2018-09-21 | 广东工业大学 | A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips |
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