KR20130007082A - The light emitting device and the mathod for manufacturing the same - Google Patents

The light emitting device and the mathod for manufacturing the same

Info

Publication number
KR20130007082A
KR20130007082A KR1020110063444A KR20110063444A KR20130007082A KR 20130007082 A KR20130007082 A KR 20130007082A KR 1020110063444 A KR1020110063444 A KR 1020110063444A KR 20110063444 A KR20110063444 A KR 20110063444A KR 20130007082 A KR20130007082 A KR 20130007082A
Authority
KR
South Korea
Prior art keywords
light emitting
rod
semiconductor layer
emitting device
layer
Prior art date
Application number
KR1020110063444A
Other languages
Korean (ko)
Inventor
박건
김선모
오충석
황세광
송호근
원준호
박지수
Original Assignee
(주)세미머티리얼즈
박건
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)세미머티리얼즈, 박건 filed Critical (주)세미머티리얼즈
Priority to KR1020110063444A priority Critical patent/KR20130007082A/en
Publication of KR20130007082A publication Critical patent/KR20130007082A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

Abstract

The light emitting device according to the present invention includes a conductive substrate, a plurality of rod-shaped light emitting structures protruding over the conductive substrate, and uniformly spaced apart from each other, and a transparent electrode layer covering the plurality of the rod-shaped light emitting structures simultaneously. Therefore, by forming a plurality of rod-shaped light emitting structures in the light emitting device, constructive interference between the light emitting structures can be induced to improve light emission efficiency.

Description

LIGHT EMITTING DEVICE AND THE MATHOD FOR MANUFACTURING THE SAME

The present invention relates to a light emitting device.

Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. Recently, light emitting diodes (LEDs) have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination. Recently, light emitting diodes Can also be implemented.

Luminance of the light emitting diode may include various conditions such as an active layer structure, a light extraction structure capable of effectively extracting light to the outside, a semiconductor material used for the light emitting diode, a size of a chip, and a type of molding member surrounding the light emitting diode. Depends on.

The technical problem to be achieved by the present invention is to provide a structure of a new light emitting device.

On the other hand, the present invention is to provide a structure of a light emitting device that can improve the luminous efficiency.

The light emitting device according to the present invention includes a conductive substrate, a plurality of rod light emitting structures protruding from the conductive substrate, and uniformly spaced apart from each other, and an integral light transmitting electrode layer covering the plurality of rod light emitting structures simultaneously. Include.

Each of the rod-shaped light emitting structures may have an active layer between a first conductive semiconductor layer and a second conductive semiconductor layer, and the second conductive semiconductor layer may be disposed on the conductive substrate.

The separation distance between the rod-shaped light emitting structures may satisfy d1 = λ x k.

(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is a positive integer.)

An insulating layer may be formed in the spaced space between the rod-shaped light emitting structures, and an upper surface of the insulating layer may support the light transmitting electrode layer.

The insulating layer may include at least one of Al 2 O 3 , Si 3 N 4 , TiO 2 , ZrO 2 , CeF 3 , HfO 2 , MgO, Ta 2 O 5 , ZnS or PbF 2 .

The insulating layer may be formed of a material having a larger refractive index than the light transmitting electrode layer.

The first conductive semiconductor layers of the plurality of light emitting structures may be connected to each other.

Meanwhile, in the method of manufacturing a light emitting device according to the present invention, a step of sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a supporting substrate, forming a mask pattern on the second conductivity type semiconductor layer, and etching the same Forming a plurality of rod type light emitting structures, attaching a conductive substrate to the plurality of rod type light emitting structures, separating the support substrate from the plurality of rod type light emitting structures, and the plurality of rod type light emitting structures Forming a light transmitting electrode layer on the first conductive semiconductor layer of the structure.

The forming of the mask pattern may include forming a plurality of mask patterns arranged in a matrix on the second conductive semiconductor layer.

The forming of the plurality of rod-shaped light emitting structures may be performed by etching the mask pattern to form a plurality of the rod-shaped light emitting structures that are uniformly spaced apart from each other.

The center distance between the rod-shaped light emitting structures may be formed to satisfy d1 = λ x (2k + 1) / 2.

(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is an integer).

In the forming of the mask pattern, a plurality of mask patterns in which rows are alternately arranged may be formed on the second conductivity-type semiconductor layer.

The center distance between the light emitting structures of the second row arranged to be offset from the center distance between the adjacent light emitting structures of the first row may be the same.

After removing the support substrate, the method may further include forming an insulating layer in the spaced space between the plurality of rod-type light emitting structures.

According to the present invention, by forming a plurality of rod-shaped light emitting structure on the light emitting device can be induced by constructive interference between the light emitting structure to improve the light emitting efficiency.

1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view illustrating the effect of the light emitting device of FIG. 1.
3 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
4 to 9 are cross-sectional views illustrating a method of manufacturing the light emitting device of FIG. 1.
10 is a cross-sectional view of a light emitting device package to which the light emitting device of FIG. 1 is applied.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is said to "include" a certain component, it means that it can further include other components, without excluding other components unless specifically stated otherwise.

The present invention relates to a light emitting device having a plurality of rod-shaped light emitting structures on a conductive substrate.

1 is a cross-sectional view of a light emitting device according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing the effect of the light emitting device of FIG.

Referring to FIG. 1, the light emitting device 100 includes a conductive substrate 150 and a first conductive semiconductor layer 120, an active layer 130, and a second conductive semiconductor layer on a first surface of the conductive substrate 150. 140.

The conductive substrate 150 may be formed of a metal or an electrically conductive semiconductor substrate.

A bonding layer (not shown) may be formed on the conductive substrate 150. The bonding layer bonds the conductive substrate 150 to the semiconductor layer.

A plurality of rod-type light emitting structures 200 are formed on the conductive substrate 150.

 The rod-shaped light emitting structures 200 have a layered structure and are spaced apart from the neighboring light emitting structures 200.

Each light emitting structure 200 has the same layered structure.

Specifically, the light emitting structure 200 includes a second conductivity type semiconductor layer 140 on the conductive substrate 150. The second conductivity-type semiconductor layer 140 may be implemented, for example, as a p-type semiconductor layer, wherein the p-type semiconductor layer is In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), for example, may be selected from InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc., Mg, Zn, Ca, Sr, Ba, etc. P-type dopant may be doped.

The active layer 130 is formed on the second conductive semiconductor layer 140.

The active layer 130 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure.

A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the active layer 130, and the clad layer (not shown) may be implemented as an AlGaN layer or an InAlGaN layer. have.

The first conductivity type semiconductor layer 120 may be formed on the active layer 130.

The first conductivity type semiconductor layer 120 may be formed in a single layer structure or a multilayer structure, and in the case of a single layer, may be formed of the first conductivity type semiconductor layer 120, and in the case of a multilayer, an undoped layer A semiconductor layer, for example, an undoped GaN layer may be formed, and a first conductive semiconductor layer 120 may be disposed under the semiconductor layer.

The undoped semiconductor layer and the first conductive semiconductor layer 120 may be In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) the composition formula And a semiconductor material having, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

In addition, when the first conductive semiconductor layer 120 is an n-type semiconductor layer, the first conductive semiconductor layer 120 may be doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. .

Meanwhile, p-type and n-type dopants may be doped into the first conductivity-type semiconductor layer 120 and the second conductivity-type semiconductor layer 140, but embodiments are not limited thereto. Although not shown, a third conductive semiconductor layer (not shown) may be formed under the second conductive semiconductor layer 140. Therefore, the light emitting device 100 may be formed of any one of pn, np, pnp, and npn junction structures.

A transmissive electrode layer 160 may be formed on the first conductive semiconductor layer 120, and a pad electrode 170 for wire connection may be formed on the transmissive electrode layer 160.

The transmissive electrode layer 160 may be formed while simultaneously covering a plurality of rod-shaped light emitting structures 200. That is, the light emitting electrode layer 160 may have an integral surface structure that is not separated, but may be formed only on the rod-shaped light emitting structure 200 in a lattice shape.

The transmissive electrode layer 160 may be an oxide or nitride based transmissive layer such as indium tin oxide (ITO), indium tin oxide nitride (ITON), indium zinc oxide (IZO), indium zinc oxide nitride (IZON), or indium zinc (IZTO). tin oxide), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx It may be formed by selecting from materials of RuOx, NiO.

The pad electrode 170 may be formed in a portion of the transmissive electrode layer 160, and may be formed in various shapes to function as a current diffusion layer on the transmissive electrode layer 160.

In this case, the distance of the light emitting structure 200 is determined according to the distance from the center of the light emitting structure 200 to the center of the adjacent light emitting structure 200, that is, the center distance (d1), the center distance (d1) Is determined according to the wavelength of the emission light of the light emitting structure 200.

The center distance d1 of the light emitting structure 200 may satisfy the following relational expression.

[Relational expression]

d1 = λ x k,

In this case, λ is defined as the wavelength of the emission light of the light emitting structure 200, k is defined as a positive integer.

As such, when the light emitting structure 200 is formed in a rod shape, the center distance d1 between the light emitting structures 200 satisfies the constructive interference condition of the emission light.

Accordingly, as shown in FIG. 2, the light b coupled with the light emitted from the neighboring light emitting structure 200 among the light a generated in the light emitting structure 200 is converted into a strong light, thereby emitting the light emitting device 100. The luminous efficiency of can be improved.

Hereinafter, a light emitting device 100A according to another exemplary embodiment of the present invention will be described with reference to FIG. 3.

Since the light emitting device 100A of FIG. 3 has the same structure as the light emitting device 100 of FIG. 1, a description thereof will be omitted.

The light emitting device 100A of FIG. 3 further includes an insulating layer 180 filling the spaced space of the light emitting structure 200 with respect to the light emitting device 100 of FIG. 1.

The insulating layer 180 formed as shown in FIG. 3 insulates the plurality of light emitting structures 200 and supports the light emitting electrode layer 160 between the light emitting structures 200 so that the light transmitting electrode layer 160 is inclined. To prevent them.

The insulating layer 180 is formed of a light-transmissive material to emit light generated between the plurality of light emitting structures 200, preferably Al 2 O 3 , Si 3 N 4 , TiO 2 , ZrO 2 , CeF 3 , HfO 2 , MgO, Ta 2 O 5 , ZnS, or PbF 2 .

At this time, by controlling the refractive index of the insulating layer 180 and the light transmitting electrode layer 160, the refractive index of the insulating layer 180 is formed larger than the refractive index of the light emitting electrode layer 160, the refractive index becomes smaller toward the upper (n) = 1) to reduce the total reflection.

Although the light emitting structure 200 is described as being completely separated above, the active layer 130 is separated from the plurality of light emitting structures 200, but the first conductivity-type semiconductor layer 120 is adjacent to light emission. The first conductive semiconductor layer 120 may be connected to the first conductive semiconductor layer 120 of the structure 200 to form a planar first conductive semiconductor layer 120.

Hereinafter, a process of manufacturing the light emitting device of the present invention will be described with reference to FIGS. 4 to 9.

First, as shown in FIG. 4, a plurality of semiconductor layers 120, 130, and 140 are grown on the support substrate 110.

The support substrate 110 may use at least one of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and preferably a sapphire substrate 110.

A first conductive semiconductor layer 120 is formed on the support substrate 110.

The first conductive semiconductor layer 120 may be formed in a multi-layered structure, and an undoped semiconductor layer (not shown), such as undoped GaN, is formed at a lower layer, and a first conductive semiconductor layer (not shown). 120 may be formed.

The undoped semiconductor layer and the first conductive semiconductor layer 120 may be In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) the composition formula And a semiconductor material having, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

In addition, when the first conductive semiconductor layer 120 is an n-type semiconductor layer, the first conductive semiconductor layer 120 may be doped with n-type dopants such as Si, Ge, Sn, Se, Te, or the like. .

The active layer 130 is formed on the first conductive semiconductor layer 120, and the active layer 130 has a single quantum well structure, a multi quantum well structure (MQW), and a quantum wire (Quantum-Wire). It may be formed of at least one of the structure, or the quantum dot (Quantum Dot) structure.

A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the active layer 130, and the clad layer (not shown) may be implemented as an AlGaN layer or an InAlGaN layer. have.

The second conductivity type semiconductor layer 140 is formed on the active layer 130. The second conductivity-type semiconductor layer 140 may be implemented, for example, as a p-type semiconductor layer, wherein the p-type semiconductor layer is In x Al y Ga 1 -x- y N (0≤x≤1, 0 Semiconductor material having a composition formula of? P-type dopants such as Ba may be doped.

Meanwhile, p-type and n-type dopants may be doped into the first conductivity-type semiconductor layer 120 and the second conductivity-type semiconductor layer 140, but embodiments are not limited thereto. Although not shown, a third conductive semiconductor layer (not shown) may be formed on the second conductive semiconductor layer 140. Therefore, the light emitting device 100 may be formed of any one of pn, np, pnp, and npn junction structures.

The first conductive semiconductor layer 120, the active layer 130, and the second conductive semiconductor layer 140 may be formed of metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like.

Next, as shown in FIG. 5, a mask pattern 300 is formed on the second conductive semiconductor layer 140.

The mask pattern 300 may be a chrome mask for laser etching. Alternatively, the mask pattern 300 may be a photoresist pattern mask for chemical etching.

The mask pattern 300 may cover an area defining each rod-shaped light emitting structure 200, and may be formed to have a matrix shape as illustrated in FIG. 6A.

As described above, the matrix pattern mask pattern 300 has a distance from the center of the covered light emitting structure 200 to the center of the neighboring light emitting structure 200, that is, the center distance d1 satisfies the above relationship. .

In this case, the cross-section of the light emitting structure 200 covered by the mask pattern 300 may be rectangular as shown in FIG. 6A, and may be polygonal or circular.

Meanwhile, the mask pattern 300 may be alternately formed in alternating rows as shown in FIG. 6B. In this case, all of the center distances d1 between the light emitting structures 200 adjacent to one light emitting structure 200 may be the same, and the center distances d1 between the light emitting structures 200 in the same row and the next row. The center distance d1 between neighboring light emitting structures 200 also satisfies the above relation.

Next, as shown in FIG. 7, the semiconductor layers 120, 130, and 140 are etched with respect to the mask pattern 300 to form a plurality of rod type light emitting structures 200.

 In this case, the etching may be laser etching, or alternatively, the etching may be wet or dry chemical etching.

Next, as shown in FIG. 8, the conductive substrate 150 is formed on the plurality of rod-type light emitting structures 200.

The conductive substrate 150 may be bonded by a plurality of rod-type light emitting structures 200 and a bonding layer, and may be directly attached to the conductive substrate 150.

When the conductive substrate 150 is bonded, the support substrate 110 is removed from the plurality of light emitting structures 200 through a laser process, and then the light emitting device 100 is turned upside down so that the conductive substrate 150 faces downward. Form.

The laser process may use, for example, an Nd: YAG laser, but is not limited thereto.

Next, as shown in FIG. 9, the light emitting electrode layer 160 is formed on the plurality of light emitting structures 200, and then the electrode pad 170 is formed in a portion of the light emitting electrode layer 160 to emit light of FIG. 1. The device 100 is formed.

In FIGS. 1 and 9, the structure of the light emitting device 100 is disclosed. However, when the insulating layer 180 is further formed between the light emitting structures 200 of the light emitting device 100 as illustrated in FIG. After the process of FIG. 7, an insulating layer 180 may be deposited to insulate the plurality of light emitting structures 200.

Hereinafter, a light emitting device package to which the light emitting device 100 illustrated in FIG. 1 is applied will be described.

10 is a cross-sectional view of a light emitting device package to which the light emitting device of the present invention is applied.

Referring to FIG. 10, the light emitting device package 400 according to the embodiment may include a body part 410, a first electrode layer 421 and a second electrode layer 420 installed on the body part 410, and the body part. The light emitting device 100 according to the embodiment installed at the 410 and electrically connected to the first electrode layer 421 and the second electrode layer 420, and the molding member 440 surrounding the light emitting device 100. It includes. In FIG. 10, the light emitting device package includes the light emitting device 100 of FIG. 1, but the present invention is not limited thereto and may include a light emitting device according to another embodiment.

The body part 410 may be formed of a silicon material, a synthetic resin material, or a metal material. The body part 410 may be formed in the upper region 412 of the body part 410 on the first and second electrode layers 421 and 420. An inclined surface may be formed around the light emitting device 100.

The first electrode layer 421 and the second electrode layer 420 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode layer 421 and the second electrode layer 420 may increase the light efficiency by reflecting the light generated from the light emitting device 100, the outside of the heat generated from the light emitting device 100 May also act as a drain.

The light emitting device 100 is mounted on the first electrode layer 421 or the second electrode layer 420, and the light emitting device 100 is connected to the first electrode layer 421 or the second through a wire 102. It may be electrically connected to the electrode layer 420.

The molding member 440 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 440 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

In the light emitting device package 400 of FIG. 10, the conductive substrate 150 is attached and electrically connected to the first electrode 421, and the electrode pad 170 is connected to the second electrode layer 420 through the wire 102. Is electrically connected to and applies power to the light emitting device 100.

A plurality of light emitting device packages 400 according to the embodiment are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, etc., which are optical members, are disposed on a path of light emitted from the light emitting device package 400. Can be. The light emitting device package 400, the substrate, and the optical member may function as a backlight unit or as a lighting system.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It belongs to the scope of right.

Light emitting element 100, 100A
Conductive Substrate 150
Active layer 130
Rod-type Light Emitting Structure 200
LED Package 400

Claims (14)

Conductive substrate,
A plurality of rod-shaped light emitting structures projecting over the conductive substrate and uniformly spaced apart;
Integrated light-transmitting electrode layer covering simultaneously the plurality of rod-shaped light emitting structures
Light emitting device comprising a. The method of claim 1,
Wherein each of the rod-shaped light emitting structures has an active layer between a first conductive semiconductor layer and a second conductive semiconductor layer, wherein the second conductive semiconductor layer is disposed on the conductive substrate. The method of claim 2,
And a separation distance between the rod-shaped light emitting structures satisfies d1 = λ xk.
(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is a positive integer.) The method of claim 1,
An insulating layer is formed in the spaced space between the rod-shaped light emitting structure,
A light emitting device in which an upper surface of the insulating layer supports the translucent electrode layer. 5. The method of claim 4,
The insulating layer includes at least one of Al 2 O 3 , Si 3 N 4 , TiO 2 , ZrO 2 , CeF 3 , HfO 2 , MgO, Ta 2 O 5 , ZnS or PbF 2 . 5. The method of claim 4,
The insulating layer is formed of a material having a larger refractive index than the transmissive electrode layer. The method of claim 1,
The first conductive semiconductor layers of the plurality of light emitting structures are connected to each other. Sequentially growing a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the support substrate;
Forming and etching a mask pattern on the second conductive semiconductor layer to form a plurality of rod type light emitting structures;
Attaching a conductive substrate on the plurality of rod-shaped light emitting structures;
Separating the support substrate from the plurality of rod-shaped light emitting structures, and
Forming a transmissive electrode layer on the first conductive semiconductor layer of the plurality of rod type light emitting structures
Method of manufacturing a light emitting device comprising a. 9. The method of claim 8,
Forming the mask pattern,
A method of manufacturing a light emitting device for forming a plurality of mask patterns arranged in a matrix form on the second conductive semiconductor layer. 9. The method of claim 8,
Forming the plurality of rod-shaped light emitting structures,
And a plurality of the rod-shaped light emitting structures spaced apart from each other by etching the mask pattern. The method of claim 10,
The center distance between the rod-shaped light emitting structure is formed so as to satisfy d1 = λ xk.
(Λ is defined as the wavelength of the emitted light of the light emitting structure, and k is a positive integer.) The method of claim 11,
Forming the mask pattern,
A method of manufacturing a light emitting device, comprising forming a plurality of mask patterns arranged alternately in rows on the second conductive semiconductor layer. The method of claim 12,
And a center distance between the light emitting structures of the second row arranged to be offset from the center distance between the adjacent light emitting structures of the first row. 9. The method of claim 8,
After removing the support substrate,
The method of manufacturing a light emitting device further comprising the step of forming an insulating layer in the spaced space between the plurality of rod-shaped light emitting structure.
KR1020110063444A 2011-06-29 2011-06-29 The light emitting device and the mathod for manufacturing the same KR20130007082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110063444A KR20130007082A (en) 2011-06-29 2011-06-29 The light emitting device and the mathod for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110063444A KR20130007082A (en) 2011-06-29 2011-06-29 The light emitting device and the mathod for manufacturing the same

Publications (1)

Publication Number Publication Date
KR20130007082A true KR20130007082A (en) 2013-01-18

Family

ID=47837723

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110063444A KR20130007082A (en) 2011-06-29 2011-06-29 The light emitting device and the mathod for manufacturing the same

Country Status (1)

Country Link
KR (1) KR20130007082A (en)

Similar Documents

Publication Publication Date Title
KR100999733B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
KR101081135B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
TWI479693B (en) Light emitting device, method of manufacturing the same
EP2254167B1 (en) Light emitting device
JP6199948B2 (en) Light emitting device, light emitting device package
EP2434545B1 (en) Light emitting device
TWI460850B (en) Light emitting device and method of manufacturing light emitting device
JP5816243B2 (en) Light emitting device and light emitting device package
US8426883B2 (en) Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit
EP2290709A2 (en) Semiconductor light-emitting device
US20100207156A1 (en) Light emitting device package
KR101803569B1 (en) Light emitting device
US9741903B2 (en) Light-emitting device and light emitting device package having the same
KR101734550B1 (en) Light emitting device and light emitting device package
KR20150010146A (en) Light emitting device and lighting system
KR20120039412A (en) Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system
KR102250516B1 (en) Light emitting device
EP2613368B1 (en) Light emitting diode
KR101628384B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
KR101973608B1 (en) Light emitting device
KR101125416B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package
US10333029B2 (en) Light-emitting element
KR102237148B1 (en) Method of manufacturing light emitting device
KR102200000B1 (en) Light emitting device and lighting system
KR101776302B1 (en) Light emitting device and light emitting device package

Legal Events

Date Code Title Description
A201 Request for examination
E601 Decision to refuse application