KR20130066308A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130066308A
KR20130066308A KR1020110133087A KR20110133087A KR20130066308A KR 20130066308 A KR20130066308 A KR 20130066308A KR 1020110133087 A KR1020110133087 A KR 1020110133087A KR 20110133087 A KR20110133087 A KR 20110133087A KR 20130066308 A KR20130066308 A KR 20130066308A
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KR
South Korea
Prior art keywords
light emitting
emitting device
substrate
protrusions
layer
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KR1020110133087A
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Korean (ko)
Inventor
박해진
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엘지이노텍 주식회사
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Priority to KR1020110133087A priority Critical patent/KR20130066308A/en
Publication of KR20130066308A publication Critical patent/KR20130066308A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

PURPOSE: A light emitting device is provided to protect the conductivity of a light emitting structure, by forming an oxidation stopper pattern among protruded parts on the upper part of a patterned substrate. CONSTITUTION: A plurality of protruded parts(12) are formed on the upper surface of a substrate. An oxidation stopper pattern(20) is formed among the plurality of protruded parts on the substrate. A buffer layer(40) is formed on the upper part of the substrate, the plurality of protruded parts and the oxidation stopper pattern. A light emitting structure is formed on the upper part of the buffer layer. An air gap is interposed between the plurality of protruded parts and between the oxidation stopper pattern and the buffer layer on the substrate.

Description

[0001]

This embodiment relates to a light emitting device.

Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electricity into infrared rays or light by using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) have been spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

Republic of Korea Patent Publication No. 10-2011-0041270 {Semiconductor light emitting device and its manufacturing method}

The embodiment provides a light emitting device capable of preventing a decrease in conductivity of the light emitting structure due to oxygen diffusion since the oxygen component contained in the substrate is blocked from diffusing into the light emitting structure.

The light emitting device of the embodiment includes a substrate having a plurality of protrusions formed on an upper surface thereof; An oxidation prevention pattern formed between the plurality of protrusions on the substrate; A buffer layer formed on the substrate, the plurality of protrusions, and the antioxidant pattern; And a light emitting structure formed on the buffer layer, wherein an air gap is interposed between the plurality of protrusions on the substrate and between the antioxidant pattern and the buffer layer.

The substrate may include a metal oxide, and the metal oxide may include at least one of sapphire (Al 2 O 3 ) or ZnO.

The anti-oxidation pattern may include at least one of silicon nitride (Si 3 N 4 ) or boron nitride (BN), and the buffer layer may include aluminum nitride (AlN).

The plurality of protrusions may comprise a rounded outer surface. In this case, the plurality of protrusions may be hemispherical. The plurality of protrusions may include a planar outer surface, and the anti-oxidation pattern may have a thickness of, for example, 100 nm to 1000 nm.

The embodiment forms an anti-oxidation pattern between the protrusions on the upper portion of the patterned substrate, thereby preventing the oxygen component contained in the substrate from diffusing into the light emitting structure and oxidizing the light emitting structure, thereby protecting the conductivity of the light emitting structure. have.

1 is a sectional view of a light emitting device according to an embodiment.
2 is a flowchart for explaining a method of manufacturing a light emitting device according to the embodiment.
3A to 3F are cross-sectional views illustrating a process of manufacturing a light emitting device.
4 is a cross-sectional view of a light emitting device package according to an embodiment.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings.

In the description of this embodiment, when described as being formed on the "top" or "bottom" (on or under) of each element, the top (bottom) or bottom (bottom) (on or under) includes both elements that are in direct contact with each other or one or more other elements are formed indirectly between the two elements. do.

In addition, when expressed as "up" or "down" (on or under) it may include the meaning of the down direction as well as the up direction based on one element (element).

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a cross-sectional view of a light emitting device 100 according to an embodiment.

The light emitting device 100 includes a LED using a plurality of compound semiconductor layers, for example, a compound semiconductor layer of Group 3-5 elements, and the LED is a colored LED or ultraviolet light emitting light such as blue, green, or red. UV: UltraViolet) LED. The emitted light of the LED may be implemented using various semiconductors, but is not limited thereto.

The light emitting device 100 includes a substrate 10, a protrusion 12, an anti-oxidation pattern 20, a buffer layer 40, a light emitting structure 50, and first and second electrode layers 60 and 70.

First, the substrate 10 may be made of a metal oxide containing an oxygen component. The metal oxide forming the substrate 10 may include, for example, sapphire (Al 2 O 3 ) or ZnO.

The plurality of protrusions 12 are spaced apart from each other on the upper surface of the substrate 10. In this case, the plurality of protrusions 12 and the substrate 10 may or may not be integrated. That is, the protrusions 12 may be integrally formed as shown in FIG. 1 by etching the substrate 10, but a plurality of protrusions 12 are formed by patterning a separate material on the upper surface of the substrate 10. May be

In addition, in order to increase the extraction efficiency of the light emitting device 100, it is preferable that the side surface of the protrusion 12 is an inclined plane having a predetermined slope or a curved surface having a predetermined curvature rather than perpendicular to the surface of the light emitting structure 50. . That is, the plurality of protrusions 12 may include a rounded outer surface, but may also include a polygonal shaped flat outer surface such as a triangle or a square. For example, the plurality of protrusions 12 may be implemented in a hemispherical shape, as shown in FIG.

In addition, the plurality of protrusions 12 may be regularly formed in any pattern, but is not limited thereto and may be irregularly formed.

As described above, when the plurality of protrusions 10 are formed on the upper surface of the substrate 10, the light generated in the active layer 54 of the light emitting structure 50 may be diffusely diffused to travel toward the light exit surface again. have. Therefore, the light extraction efficiency to exit to the outside can be improved.

According to the embodiment, the anti-oxidation pattern 20 is formed between the plurality of protrusions 12 on the substrate 10. The antioxidant pattern 20 may be formed of nitride. For example, the nitride forming the anti-oxidation pattern 20 may be at least one of silicon nitride (Si 3 N 4 ) or boron nitride (BN). In addition, the antioxidant pattern 20 may have a thickness of 100 nm to 1000 nm.

The buffer layer 40 is formed on the substrate 10, the plurality of protrusions 12, and the anti-oxidation pattern 20. The buffer layer 40 may be formed of nitride, and the nitride forming the buffer layer 40 may be aluminum nitride (AlN). The buffer layer 40 serves to reduce the lattice mismatch between the substrate 10 and the light emitting structure 50. That is, when the first conductivity-type semiconductor layer 52 of the light emitting structure 50 is directly formed on the substrate 10, a pit may occur and cracks may occur, and the buffer layer 40 may be formed. Acts to alleviate this stress. For this purpose, the thickness of the buffer layer 40 may be 1 μm, for example.

An air gap 30 is formed between the plurality of protrusions 12 on the substrate 10. That is, the air gap 30 is formed between the oxidation prevention pattern 20 and the buffer layer 40. Since the growth direction and the growth rate of the buffer layer 40 grown on the protrusions 12 are different from the growth direction and the growth rate of the buffer layer 40 grown on the substrate 10 between the protrusions 12, as shown in FIG. The same air gap 30 may be formed.

The refractive index of the sapphire substrate 10 is approximately 1.7, and the refractive index of the air gap 30 is approximately 1. Therefore, the light passing through the region where the air gap 30 is formed is scattered while being reflected and refracted by the difference between the refractive index of the sapphire substrate 10 and the refractive index of the air gap 30. Therefore, the light extraction efficiency can be improved by forming the air gap 30 on the sapphire substrate 10.

The light emitting structure 50 is disposed on the buffer layer 40, and includes a first conductive semiconductor layer 52, an active layer 54, and a second conductive semiconductor layer 56.

The first conductive semiconductor layer 52 is formed on the buffer layer 40, the active layer 54 is formed on the first conductive semiconductor layer 52, and the second conductive semiconductor layer 56 is formed on the first conductive semiconductor layer 52. It is formed on top of the active layer 54. As such, the first conductive semiconductor layer 52, the active layer 54, and the second conductive semiconductor layer 56 may be stacked on the buffer layer 40 to form the light emitting structure 50.

The first conductivity type semiconductor layer 52 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the first conductivity type dopant may be doped. For example, the first conductive type semiconductor layer 52 having a composition formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) The semiconductor material may be formed of any one or more of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN. When the first conductivity type semiconductor layer 52 is an N type semiconductor layer, the first conductivity type dopant may include an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 52 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 54 is formed on the first conductivity type semiconductor layer 52, and has a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, and a quantum dot. It may include either a structure or a quantum line structure. The active layer 54 is formed of a well layer and a barrier layer, for example, InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), / AlGaAs using a compound semiconductor material of Group III-V elements. , GaP (InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed between the active layer 54 and the first conductive semiconductor layer 52 or between the active layer 54 and the second conductive semiconductor layer 56.

The conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer 54. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. In addition, the conductive clad layer may be doped with n-type or p-type.

The second conductivity-type semiconductor layer 56 may be formed of a semiconductor compound. The second conductivity-type semiconductor layer 56 may be implemented with compound semiconductors such as Groups III-5, II-6, and the like, and may be doped with the second conductivity type dopant. For example, a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) or GaN, AlN, AlGaN, InGaN, InN, InAlGaN , AlInN may be formed of any one or more. When the second conductive semiconductor layer 56 is a P-type semiconductor layer, the second conductive dopant may be a P-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity-type semiconductor layer 56 may be formed as a single layer or a multilayer, but is not limited thereto.

As described above, according to the embodiment, the anti-oxidation pattern 20 is formed between the plurality of protrusions 12 on the substrate 10 in the light emitting device 100, and thus the first conductive semiconductor layer 52 is formed. Diffusion of the oxygen component of can be blocked. In other words, the oxygen component in the patterned sapphire substrate (PSS) 10 having the plurality of protrusions 12 on the top surface is diffused into the buffer layer 40 during the deposition of the buffer layer 40 and then the first component. It may be diffused to the conductive semiconductor layer 52. If the oxygen component is diffused to the first conductivity type semiconductor layer 52, the first conductivity type semiconductor layer 52 may be oxidized to have a low conductivity. However, in this embodiment, oxygen diffusion to the first conductivity type semiconductor layer 52 is prevented by the oxidation prevention pattern 20.

Meanwhile, the first electrode layer 60 may be disposed on the first conductive semiconductor layer 52 and formed of metal. For example, the first electrode layer 60 may be made of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof.

For example, the first electrode layer 60 may be formed of the above-described metal material, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium zinc oxide (IGZO). ), Indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / It may include at least one of Au / ITO, but is not limited to such materials.

Next, the second electrode layer 70 may be formed on the second conductive semiconductor layer 56 and may be made of the same material as the first electrode layer 60.

Although the light emitting device 100 as shown in FIG. 1 is horizontal, the present embodiment is not limited thereto. That is, the light emitting device 100 according to the embodiment may be applied to a flip chip type by changing the shapes of the first and second electrode layers 60 and 70. As described above, the present embodiment relates to the substrate 10 having the protrusion 12 formed under the light emitting structure 50, the anti-oxidation pattern 20, the air gap 30, and the buffer layer 40. It is not limited to the form of the 60 and 70 or the kind of the light emitting structure 50.

Hereinafter, a method of manufacturing the light emitting device 100 according to the above-described embodiment will be described with reference to the accompanying drawings.

2 is a flowchart illustrating a method of manufacturing the light emitting device 100 according to the embodiment, and FIGS. 3A to 3F are cross-sectional views illustrating a process of manufacturing the light emitting device 100.

First, as shown in FIG. 3A, a substrate 10 having a plurality of protrusions 12 is formed (operation 200). For example, the substrate 10 may be a PSS having an uneven protrusion 12 formed on an upper surface thereof. For example, the substrate 10 may be formed of at least one of sapphire (Al 2 O 3 ) or ZnO, which is a metal oxide containing an oxygen component.

Next, as illustrated in FIG. 3B, an oxide film 20A is deposited on the plurality of protrusions 12 and the substrate 10 (S210). For example, the antioxidant layer 20A may be formed of silicon nitride (Si 3 N 4 ) or gallium nitride (GaN).

Next, as illustrated in FIG. 3C, the antioxidant layer 20A is patterned to form the antioxidant pattern 20 (operation 220). For example, only the upper surface of the antioxidant film 20A between the plurality of protrusions 12 is covered with a protective film (not shown), and only the antioxidant film 20A is applied to the upper portion of the protrusion 12 using the protective film as an etching mask. As illustrated in FIG. 3C, the anti-oxidation pattern 20 may be formed only between the plurality of protrusions 12 by removing by dry etching or wet etching.

Next, as shown in FIG. 3D, the buffer layer 40 is formed on the substrate 10 having the plurality of protrusions 12 and the anti-oxidation pattern 20 (operation 230). For example, the buffer layer 40 may be formed using aluminum nitride (AlN).

For example, in the growth temperature range of 1200 ° C to 1400 ° C, aluminum nitride (AlN) may be deposited on the substrate 10, the plurality of protrusions 12, and the anti-oxidation pattern 20 to form the buffer layer 40. Can be.

As such, when the buffer layer 40 is formed, an air gap 30 is formed between the plurality of protrusions 12 between the oxidation prevention pattern 20 and the buffer layer 40 as shown in FIG. 3D. Can be.

As described above, the air gap 30 is grown in the buffer layer 40 in which the growth direction and growth rate of the buffer layer 40 grown on the protrusions 12 are grown on the substrate 10 between the protrusions 12. It is formed because it is different from the direction and growth rate.

Next, as illustrated in FIG. 3E, the light emitting structure 50A is formed on the buffer layer 40 (operation 240). Here, the first conductive semiconductor layer 52A, the active layer 54A, and the second conductive semiconductor layer 56A may be sequentially stacked on the buffer layer 40 to form the light emitting structure 50A.

The light emitting structure 50A may be formed of, for example, an organometallic chemical vapor deposition (MOCVD), a chemical vapor deposition (CVD), a plasma chemical vapor deposition (PECVD), a molecular beam growth method (MBE; Molecular Beam). Epitaxy), Hydride Vapor Phase Epitaxy (HVPE), and the like, but are not limited thereto.

Each of the first and second conductivity-type semiconductor layers 52A and 56A may be formed of a semiconductor compound. It can be implemented with compound semiconductors, such as group 3-5, group 2-6. First and second conductivity type dopants may be doped into the first and second conductivity type semiconductor layers 52A and 56A, respectively. For example, a claim having a composition formula of the first conductivity type semiconductor layer (52A) is In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) The semiconductor material may be formed of any one or more of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN. The second conductivity type semiconductor layer (56A) is a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) and GaN , AlN, AlGaN, InGaN, InN, InAlGaN, may be formed of any one or more of AlInN.

If the first and second conductivity type semiconductor layers 52A and 56A are N type and P type semiconductor layers, respectively, the first conductivity type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The second conductivity type dopant may include a P type dopant such as Mg, Zn, Ca, Sr, Ba, or the like.

Each of the first and second conductivity-type semiconductor layers 52A and 56A may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 54A is formed of a well layer and a barrier layer, for example, InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), / AlGaAs, using a compound semiconductor material of Group III-V elements. , GaP (InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto.

Thereafter, the first conductive semiconductor layer 52A, the active layer 54A, and the second conductive semiconductor layer 56A are mesa-etched as shown in FIG. 3F to form the first conductive semiconductor layer 52. After the exposure, as shown in FIG. 1, the first and second electrode layers 60 and the upper surface 52B of the first conductive semiconductor layer 52 and the second conductive semiconductor layer 56 are exposed. 70) are formed respectively (step 250).

3A to 3F are merely exemplary manufacturing methods of the light emitting device 100 shown in FIG. 1, and the light emitting device 100 may be manufactured by other methods in addition to these methods.

Hereinafter, a light emitting device package including a light emitting device 100 according to an embodiment will be described with reference to the accompanying drawings.

4 is a sectional view of a light emitting device package 300 according to an embodiment.

As shown in FIG. 4, the light emitting device package 300 according to the embodiment includes a package body 310, a first electrode 322 and a second electrode 324 installed on the package body 310, and a first The light emitting device 100 is electrically connected to the electrode 322 and the second electrode 324, and a molding member 340 surrounding the light emitting device 100.

A cavity may be formed on an upper surface of the package body 310, and a side surface of the cavity may be formed to be inclined 312. The package body 310 may be formed of a substrate having good insulation or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), and the like, and a plurality of substrates. This may be a laminated structure. Embodiments are not limited to the material, structure, and shape of the package body 310.

The first electrode 322 and the second electrode 324 are formed on the package body 310, are electrically separated from each other, and serve to supply power to the light emitting device 100. In addition, the first electrode 322 and the second electrode 324 may serve to increase the light efficiency by reflecting the light generated from the light emitting device 100, the heat generated from the light emitting device 100 to the outside It can also play a role.

The light emitting device 100 may be installed on an upper surface of at least one of the package body 310, the first electrode 322, or the second electrode 324.

The light emitting device 100 according to the embodiment may be connected to the first and second electrodes 322 and 324 of the light emitting device package using a bonding method such as a flip chip method or a wire bonding method. It is not limited.

For example, as shown in FIG. 4, the light emitting device 100 is formed on the first electrode 322, and the first electrode 322 and the second electrode 324 through the wires 332 and 334. And may be electrically connected to each other by a wire bonding method. Alternatively, unlike FIG. 1, when the light emitting device 100 is implemented in a flip chip form instead of a horizontal shape, the light emitting device 100 may be formed on the first and second electrodes 322 and 324. .

On the other hand, the molding member 340 may surround the light emitting device 100 to protect the light emitting device 100 from the outside. In addition, the molding member 340 may include a phosphor 342 to change the wavelength of light emitted from the light emitting device 100. For example, the molding member 340 may be made of a colorless transparent polymer resin material such as epoxy or silicon.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package.

Yet another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp. .

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: substrate 12: protrusion
20: antioxidant pattern 20A: antioxidant film
30: air gap 40: buffer layer
50: light emitting structure 52: first conductive semiconductor layer
54: active layer 56: second conductive semiconductor layer
60: first electrode layer 70: second electrode layer
100 light emitting device 300 light emitting device package
310: package body 322, 324: first and second electrodes
332 and 334 wire 340 molding member

Claims (9)

A substrate having a plurality of protrusions formed on an upper surface thereof;
An oxidation prevention pattern formed between the plurality of protrusions on the substrate;
A buffer layer formed on the substrate, the plurality of protrusions, and the antioxidant pattern; And
It includes a light emitting structure formed on the buffer layer,
And an air gap interposed between the plurality of protrusions on the substrate and between the anti-oxidation pattern and the buffer layer. The light emitting device of claim 1, wherein the substrate comprises a metal oxide. The light emitting device of claim 2, wherein the metal oxide comprises at least one of sapphire (Al 2 O 3 ) or ZnO. The light emitting device of claim 1, wherein the anti-oxidation pattern comprises at least one of silicon nitride (Si 3 N 4 ) or boron nitride (BN). The light emitting device of claim 1, wherein the buffer layer comprises aluminum nitride (AlN). The light emitting device of claim 1, wherein the plurality of protrusions comprise a rounded outer surface. The light emitting device of claim 6, wherein the plurality of protrusions are hemispherical. The light emitting device of claim 1, wherein the plurality of protrusions comprise a planar outer surface. The light emitting device of claim 1, wherein the anti-oxidation pattern has a thickness of about 100 nm to about 1000 nm.
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CN105633222A (en) * 2014-11-06 2016-06-01 展晶科技(深圳)有限公司 Method for manufacturing vertical light-emitting diode
CN104576845A (en) * 2014-12-16 2015-04-29 深圳市德上光电有限公司 Producing method for graphical sapphire substrate
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