KR101765912B1 - Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system - Google Patents

Abstract

A light emitting device according to an embodiment includes a first conductive semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; An active layer formed below the first conductive semiconductor layer; A second conductive semiconductor layer formed under the active layer; And a second electrode electrically connected to the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer includes an unshown semiconductor layer, and the unshown semiconductor layer is formed to have a metal cluster therein .

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device, a light emitting device package,

The present invention relates to a light emitting device, a light emitting device package and an illumination system.

III-V nitride semiconductors (group III-V nitride semiconductors) have been spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. Ⅲ-Ⅴ group conductivity type semiconductor is made of a semiconductor material having a compositional formula of normal _{In x Al y Ga 1 -x- y} N (0≤≤x≤1, 0≤y≤1, 0≤x + y≤1) have.

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

Emitting diodes using light emitting diodes or laser diodes using such a conductive semiconductor material, and they have been used as light sources for various products such as a keypad light emitting portion of a cell phone, an electric sign board, and a lighting device.

Embodiments provide a light emitting device, a light emitting device package, and an illumination system having a new structure.

Embodiments provide a semiconductor light emitting device, a light emitting device package, and an illumination system with improved light extraction efficiency.

A light emitting device according to an embodiment includes a first conductive semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; An active layer formed below the first conductive semiconductor layer; A second conductive semiconductor layer formed under the active layer; And a second electrode electrically connected to the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer includes an unshown semiconductor layer, and the unshown semiconductor layer is formed to have a metal cluster therein .

Embodiments provide a light emitting device, a light emitting device package, and an illumination system having a new structure.

Embodiments provide a semiconductor light emitting device, a light emitting device package, and an illumination system with improved light extraction efficiency.

1 is a side sectional view of a light emitting device according to an embodiment;
Figs. 2 to 15 are views showing a method of manufacturing a light emitting device according to an embodiment
16 is a side sectional view of a light emitting device according to another embodiment
17 to 21 are views showing a method of manufacturing a light emitting device according to another embodiment
22 is a cross-sectional view of the light emitting device package including the light emitting device according to the embodiments
23 is a view showing a backlight unit including a light emitting device package according to embodiments
24 is a perspective view of a lighting unit including a light emitting device package according to embodiments.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure layer may be formed "on" or "under" a substrate, each layer Quot; on "and " under " include both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, a light emitting device, a light emitting device package, and an illumination system according to embodiments will be described with reference to the accompanying drawings.

1 is a side cross-sectional view of a light emitting device 100 according to an embodiment of the present invention.

1, a light emitting device 100 according to an embodiment includes a conductive support member 175, a first conductive semiconductor layer 110 formed on the conductive support member 175, A first un-GaN layer 112 formed under the first un-GaN layer 112, a metal cluster 114 formed under the first un-GaN layer 112, a first un-GaN layer 112, A second un-GaN layer 116 formed below the cluster 114, a first conductive semiconductor layer 110 formed below the second un-GaN layer 116, An active layer 120 formed under the active layer 120 and a second conductive type semiconductor layer 130 formed under the active layer 120. A first electrode 115 formed on the first conductive semiconductor layer 110 and a second electrode 115 formed on the upper surface of the first conductive semiconductor layer 110, the active layer 120, And a protective film 180 formed on the side surface.

A protective member 140, an ohmic layer 150, a reflective layer 160, a bonding layer 170, and a current blocking layer 145 are interposed between the conductive supporting member 175 and the second conductive semiconductor layer 130, Can be formed.

The light emitting structure layer 135 includes a first conductivity type semiconductor layer 110, an active layer 120 and a second conductivity type semiconductor layer 130. The light emitting structure layer 135 is formed of the first and second conductivity type semiconductor layers 110 and 130, Electrons and holes are recombined in the active layer 120 to generate light.

The conductive support member 175 may support the light emitting structure layer 135 and may provide power to the light emitting structure layer 135 together with the first electrode 115. The conductive support member 175, for example, include at least one of Cu, Au, W, Al, Ni, Mo, Si, Ge, GaAs, ZnO, GaN, Ga ₂ O ₃ or SiC, SiGe, CuW . The thickness of the conductive support member 175 may vary depending on the design of the light emitting device 100, but may have a thickness of, for example, 30 μm to 500 μm.

The bonding layer 170 may be formed on the conductive support member 175. The bonding layer 170 is formed as a bonding layer under the reflective layer 160 and the protective member 140. The bonding layer 170 may be exposed to the outer surface and may contact the reflective layer 160, the end of the ohmic layer 150 and the protective member 140 to enhance adhesion between the layers.

The bonding layer 170 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Al, Si, .

A reflective layer 160 may be formed on the bonding layer 170. The reflective layer 160 may reflect light incident from the light emitting structure layer 135 to improve the luminous efficiency of the light emitting device 100.

The reflective layer 160 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au or Hf. Alternatively, the metal or alloy can be formed into a multilayer using a transparent conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, or ATO. Specific examples thereof include IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, and Ag / Pd / Cu.

The ohmic layer 150 may be formed on the reflective layer 160. The ohmic layer 150 ohmically contacts the second conductive semiconductor layer 130 to supply power to the light emitting structure layer 135.

The ohmic layer 150 may selectively use a transparent conductive layer and a metal. Examples of the ohmic layer 150 include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide indium gallium zinc oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO _x , RuO _x , RuO _x / , Pt, Ni / IrO _x / Au, or Ni / IrO _x / Au / ITO.

A current blocking layer (CBL) 145 may be formed between the ohmic layer 150 and the second conductive semiconductor layer 130. The current blocking layer 145 may be formed so as to overlap at least part of the current blocking layer 145 in the vertical direction with respect to the first electrode 115 so that the shortest distance between the first electrode 115 and the conductive supporting member 175 The light emitting efficiency of the light emitting device 100 can be improved.

The current blocking layer 145 is formed of a material having electrical insulation properties and a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170 and a material having a lower electrical conductivity than the second conductive semiconductor layer 130 can be formed using at least one of material and, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , TiO _x , TiO ₂ , Ti, Al, and Cr.

Meanwhile, the current blocking layer 145 may be formed between the reflective layer 160 and the ohmic layer 150, but the present invention is not limited thereto.

The protective member 140 may be formed on a peripheral region of the upper surface of the bonding layer 170.

The protection member 140 may be formed in a ring shape, a loop shape, a frame shape, or the like in the light emitting device 100 in contact with the second conductivity type semiconductor layer 130.

The protective member 140 may minimize the electrical shorting of the light emitting structure 135 and the conductive supporting member 175 and may prevent a gap between the light emitting structure 135 and the conductive supporting member 175 Moisture and the like can be prevented from permeating.

The protective member 140 is made of a material having electric insulation, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170, and a material forming a Schottky contact with the second conductive type semiconductor layer 130 one may be formed using at least one, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , TiO _x , TiO _{2 ,} Ti, Al, or Cr.

The light emitting structure layer 135 may be formed on the ohmic layer 150 and the protective member 140.

The light emitting structure layer 135 may include a plurality of compound semiconductor layers of Group III-V elements. For example, the light emitting structure layer 135 may include a first conductive semiconductor layer 110, The active layer 120 and the second conductivity type semiconductor layer 130 below the active layer 120. [

The first conductive semiconductor layer 110 is a compound semiconductor of a group III-V element doped with a first conductive dopant, and has the formula In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? y? 1, 0? x + y? 1), and may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. When the first conductive semiconductor layer 110 is an N-type semiconductor layer, the first conductive dopant includes N-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

A first un-GaN layer 112 may be formed between the first conductive semiconductor layers 110. The first un-GaN layer 112 is intentionally formed of a material having a low electric conductivity, to which a first conductive type dopant or a second conductive type dopant is not added but a first conductive type dopant or a second conductive type dopant is partially added And can be formed to a thickness of 1 to 200 nm.

A metal cluster 114 may be formed under the first un-GaN layer 112. The metal clusters 114 may be formed by laminating a metal layer (113 in FIG. 3) in contact with the first un-GaN layer 112 to a thickness of 1 to 100 Å, followed by heat treatment. Since the metal layer 113 is formed by heat treatment as described above and the metal clusters 114 can form crystals, the metal clusters 114 are formed under the first un-GaN layer 112 and the metal clusters 114 A second un-GaN layer 116 may be formed.

The first un-GaN layer 112 and the second un-GaN layer 116 may be formed of an undoped semiconductor layer, and may be doped with a first conductive dopant or a second conductive dopant, Type dopant or a material having a low electrical conductivity, to which a part of the second conductivity type dopant is added.

When the thickness of the second un-GaN layer 116 is increased, the distance between the active layer 120 and the metal clusters 114 increases, and the surface plasmon effect is drastically reduced. The thickness may be in the range of 1 to 50 nm.

It is desirable to reduce the current concentration at the shortest distance between the first electrode 115 and the conductive support member 175. As described above, the metal cluster 114 having excellent electrical conductivity is electrically conductive GaN layer 112 and the second un-GaN layer 116, the current can be horizontally diffused, so that the electron injection efficiency into the active layer 120 can be improved have.

Also, even if light generated in the active layer 120 is incident at a critical angle or more due to a surface plasmon phenomenon, the amount of light to be totally reflected decreases and the amount of light reflected or scattered toward the upper portion of the light emitting device 100 increases So that the light extraction efficiency can be improved.

The first conductive semiconductor layer 110 may be formed under the second un-GaN layer 116 and the active layer 120 may be formed below the first conductive semiconductor layer 110. The active layer 120 may include a single quantum well structure, a multiple quantum well structure (MQW), a quantum dot structure, or a quantum wire structure. The active layer 120 may be formed with a period of a well layer and a barrier layer, for example, a period of an InGaN well layer / GaN barrier layer or an InGaN well layer / AlGaN barrier layer using a compound semiconductor material of a group III-V element .

A conductive clad layer (not shown) may be formed on and / or below the active layer 120, and the conductive clad layer may be formed of an AlGaN-based semiconductor.

The second conductive semiconductor layer 130 is formed below the active layer 120 and is a compound semiconductor of a group III-V element doped with a second conductive dopant. The compound semiconductor is represented by In _x Al _y Ga _{1 -x- y} GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like which are N (0? X? 1, 0? Y? Can be selected. When the second conductive semiconductor layer 130 is a P-type semiconductor layer, the second conductive dopant may include a P-type dopant such as Mg, Zn, or the like.

Meanwhile, the light emitting structure layer 135 may include a third conductive type semiconductor layer which is opposite to the second conductive type semiconductor layer in polarity, under the second conductive type semiconductor layer 130. Also, the first conductive semiconductor layer 110 may be a P-type semiconductor layer and the second conductive semiconductor layer 130 may be an N-type semiconductor layer. Accordingly, the light emitting structure layer 135 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The side surface of the light emitting structure layer 135 may be inclined by isolation etching for dividing a plurality of chips into individual chip units.

In addition, the light extracting pattern 111 may be formed on the upper surface of the light emitting structure layer 135. The light extraction pattern 111 minimizes the amount of light totally reflected from the surface, thereby improving light extraction efficiency of the light emitting device 100.

At least some regions of the light extracting pattern 111 and the passivation layer 180 may overlap each other in the vertical direction. Accordingly, the protective film 180 and the first conductive semiconductor layer 110 are prevented from being easily peeled off, thereby improving the reliability of the light emitting device 100.

The light extracting pattern 111 may have a random shape and arrangement, or may have a specific shape and arrangement.

For example, the light extracting pattern 111 may be arranged in a photonic crystal structure having a period of 50 nm to 3000 nm. The photonic crystal structure can efficiently extract light of a specific wavelength region to the outside by an interference effect or the like.

In addition, the light extracting pattern 111 may have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, a polygonal pyramid, and the like.

The first electrode 115 may be formed on the upper surface of the light emitting structure layer 135. The first electrode 115 may be branched into a predetermined pattern, but the present invention is not limited thereto.

In addition, the first electrode 115 may have at least one pad, and at least one electrode pattern connected to the pad may have the same or different lamination structure, but the present invention is not limited thereto.

The passivation layer 180 may be formed on the upper surface and the side surfaces of the light emitting structure layer 135.

The passivation layer 180 may prevent electrical short-circuiting between the light emitting structure layer 135 and the external electrodes, and may be formed of a material having electrical insulation and light transmitting properties, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , TiO ₂ Or Al ₂ O ₃ The first and second electrodes < RTI ID = 0.0 > .

The passivation layer 180 may be formed on a region of the first conductive semiconductor layer except the region where the first electrode 115 is formed.

The light emitting device 100 according to the embodiment has an advantage of excellent light extraction efficiency and current diffusion effect.

Hereinafter, a method of manufacturing the light emitting device 100 according to the embodiment will be described in detail. However, the contents overlapping with those described above will be omitted or briefly explained.

2 to 13 are views for explaining a method of manufacturing the light emitting device 100 according to the embodiment.

Referring to FIG. 2, a first conductive semiconductor layer 110 and a first un-GaN layer 112 may be formed on a growth substrate 101.

The growth substrate 101 may be formed of at least one of, for example, sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP or Ge.

The first conductive semiconductor layer 110 and the first un-GaN layer 112 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma May be formed by a method such as chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE) It is not limited.

A buffer layer (not shown) may be formed between the first conductive semiconductor layer 110 and the growth substrate 101 to mitigate the difference in lattice constant between the first conductive semiconductor layer 110 and the growth substrate 101.

Referring to FIGS. 3 and 4, a metal layer 113 may be stacked on the first un-GaN layer 112. The metal layer 113 may be formed of a metal material having good electrical conductivity, such as Au, Ag, Ni, Al, Ga, or In. Next, the metal layer 113 is heat-treated to form metal clusters 114. The heat treatment temperature may vary depending on the material and the thickness of the metal layer 113, but the metal cluster 114 may be formed by performing heat treatment for 1 to 30 minutes in the range of 500 to 1000 ?.

Since the semiconductor layer is not grown on the metal layer 113, a part of the metal is evaporated by the heat treatment to form the metal clusters 114. Since a part of the first un-GaN layer 112 is exposed, The second un-GaN layer 116 and the first conductivity type semiconductor layer 110 can be grown.

Referring to FIG. 5, a second un-GaN layer 116 may be formed on the first un-GaN layer 112 and the metal clusters 114. The second un-GaN layer 116 may be formed of a material having low electrical conductivity, such as the first un-GaN layer 112, which does not add a first conductive dopant or a second conductive dopant.

The first un-GaN layer 112, the metal clusters 114, and the second un-GaN layer 116 may be repeatedly stacked.

Referring to FIG. 6, the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 may be sequentially formed on the second un-GaN layer 116. The light emitting structure layer 135 may include a first conductivity type semiconductor layer 110 contacting the growth substrate 101 and a second conductivity type semiconductor layer 130 formed on the active layer 120 . The light emitting structure layer 135 may be formed by, for example, metal organic chemical vapor deposition (MOCVD).

Referring to FIG. 7, the protection member 140 may be formed on the light emitting structure layer 135 along the chip boundary region of the light emitting device.

The protective member 140 may be formed around the individual chip regions using a patterned mask, and may be formed in a ring shape, a loop shape, a frame shape, or the like. The protection member 140 may be formed using a method such as electron beam (E-beam) deposition, sputtering, or plasma enhanced chemical vapor deposition (PECVD).

The protective member 140, for example, ITO, IZO, IZTO, IAZO , IGZO, IGTO, AZO, ATO, ZnO, SiO 2, SiO x, SiO x N y, Si 3 N 4, Al 2 O 3, TiO _x , TiO _{2 ,} Ti, Al, or Cr.

Referring to FIG. 8, the current blocking layer 145 may be formed on the second conductive semiconductor layer 130. The current blocking layer 145 may be formed using a patterned mask.

The current blocking layer 145 may be formed at a position where the current blocking layer 145 overlaps at least part of the electrode 115 in a direction perpendicular to the electrode 115 so as to mitigate the phenomenon that current is biased to a specific region in the light emitting structure layer 135.

9, the ohmic layer 150 may be formed on the second conductive semiconductor layer 130 and the current blocking layer 145 and the reflective layer 160 may be formed on the ohmic layer 150. Referring to FIG. .

The ohmic layer 150 and the reflective layer 160 may be formed by E-beam deposition, sputtering, or plasma enhanced chemical vapor deposition (PECVD), for example.

Referring to FIG. 10, a bonding layer 170 may be formed on the ohmic layer 150 and the reflective layer 160, and a conductive supporting member 175 may be formed on the bonding layer 170.

The bonding layer 170 may be formed between the second protective member 140 and the conductive supporting member 175 to enhance adhesion between the layers.

The conductive support member 175 may be formed by a bonding method in which a separate sheet is prepared and adhered to the bonding layer 170, or may be formed by a plating method, a deposition method, or the like. Do not.

Referring to FIG. 11, the growth substrate 101 may be removed from the light emitting device of FIG.

The growth substrate 101 may be removed by at least one of laser lift off and etching.

As the growth substrate 101 is removed, the surface of the first conductivity type semiconductor layer 110 may be exposed.

Referring to FIG. 12, the light emitting structure layer 135 is subjected to isolation etching according to a unit chip region to separate the light emitting structure layers 135 into a plurality of light emitting structure layers 135. The isolation etch may be performed using, for example, dry etching such as ICP (Inductively Coupled Plasma) or wet etching using an etchant such as KOH, H ₂ SO ₄ , H ₃ PO ₄ , Do not.

The side surfaces of the light emitting structure layer 135 may have inclined sides as shown by the isolation etching. In addition, the top surface of the protection member 140 may be partially exposed by the isolation etching.

Referring to FIG. 13, the light extracting pattern 111 is formed on the first conductive semiconductor layer 110. The light extracting pattern 111 may have a random shape and arrangement, or may have a specific shape and arrangement.

The light extracting pattern 111 having a random shape may be formed through a physical method such as wet etching on the upper surface of the light emitting structure layer 135 or polishing of the surface.

The light extracting pattern 111 having a specific shape and arrangement is formed by forming a pattern mask including a pattern corresponding to the desired shape of the light extracting pattern 111 on the top surface of the first conductive type semiconductor layer 110, And then performing an etching process along the pattern mask.

A protective layer 180 may be formed on the side surfaces of the light emitting structure layer 135 and the first conductive semiconductor layer 110. The passivation layer 180 may be formed of a material having electrical insulation and light transmitting properties, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and the like.

The passivation layer 180 may be formed by a method such as electron beam (E-beam) deposition, sputtering, or plasma enhanced chemical vapor deposition (PECVD).

Referring to FIG. 14, a first electrode 115 may be formed on a portion of the first conductive semiconductor layer 110. The first electrode 115 may be formed of a metal, for example, at least one of Cr, Ni, Au, Ti, and Al.

The first electrode 115 may be formed by a method such as an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), or dual-type thermal evaporator sputtering As shown in FIG.

The first electrode 115 may supply power to the light emitting structure layer 135.

Referring to FIG. 15, the light emitting device 100 according to the embodiment can be provided by performing a chip separating step of separating the light emitting device of FIG. 14 into individual light emitting device units.

The chip separating process includes, for example, a braking process for separating the chip by applying a physical force using a blade or the like, a laser scribing process for separating the chip by irradiating a laser to the chip boundary, and wet or dry etching And the like, but it is not limited thereto.

16 is a sectional view of a light emitting device 100B according to another embodiment. The light emitting device 100B according to another embodiment includes a conductive supporting member 175, a first conductive semiconductor layer 110 formed on the conductive supporting member 175, a first conductive semiconductor layer 110 formed under the first conductive semiconductor layer 110, The first un-GaN layer 112 formed under the second un-GaN layer 112, the metal clusters 114 formed under the first un-GaN layer 112, the first un-GaN layer 112 and the metal clusters 114 A first conductive semiconductor layer 110 formed under the second un-GaN layer 116, a second conductive semiconductor layer 110 formed under the first conductive semiconductor layer 110, The second conductive semiconductor layer 130 formed below the active layer 120, the first conductive semiconductor layer 110, the active layer 120, the second conductive semiconductor layer 130, The protective film 180 may be formed on the upper and /

The first electrode 115 penetrates the conductive support substrate 175 and the light emitting structure layer 135 to be electrically connected to the first conductive semiconductor layer 110 and the second electrode 131 is electrically connected to the first conductive semiconductor layer 110, 1 is different from the light emitting device 100 of FIG. 1 in that the first conductive semiconductor layer 130 is electrically connected to the second conductive semiconductor layer 130 through the second conductive semiconductor layer 130.

As described above, a via hole (210 in FIG. 17) is formed in the light emitting structure layer 135, and the first electrode 115 formed on the via hole 210 is connected to the conductive substrate formed on the lower part, Since the first electrode is formed below the light emitting structure layer 135 and the second electrode 131 is formed on the side surface of the light emitting structure layer 135, Can be prevented from being absorbed by the first and second electrodes 115 and 131, so that the light extraction efficiency can be improved.

17 to 21 are views showing a method of manufacturing the light emitting device 100B according to another embodiment.

17, a first conductive semiconductor layer 110, a first un-GaN layer 112, a metal cluster 114, a second un-GaN layer 116 The first conductivity type semiconductor layer 110, the active layer 120, the second conductivity type semiconductor layer 130, the ohmic layer 150, and the reflective layer 160 may be formed on the light emitting structure layer 135, A via hole 210 may be formed through the ohmic layer 150 and the reflective layer 160. [ The upper surface of the first conductivity type semiconductor layer 110 adjacent to the growth substrate 101 may be partially exposed by the via hole 210.

The via hole 210 may be formed by dry etching such as ICP (Inductively Coupled Plasma) or wet etching using an etchant such as KOH, H ₂ SO ₄ , or H ₃ PO ₄ , but the present invention is not limited thereto.

Referring to FIG. 18, a first passivation layer 185 may be formed to fill the via hole 210. The first passivation layer 185 prevents the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 from being electrically short-circuited.

The first passivation layer 185 may be formed to contact the upper surface of the first conductive semiconductor layer 110 adjacent to the growth substrate 101 by filling the via hole 210. The ohmic layer 150 and the reflective layer 160).

The first passivation layer 185 may be formed of a material having electrical insulation and light transmitting properties, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O _3, or the like.

Referring to FIG. 19, the first passivation layer 185 may be etched using a dry etching method such as ICP (Inductively Coupled Plasma) by forming a mask through photolithography. The first passivation layer 185 may be etched except for the inner surface of the via hole 210 and the portion formed on the ohmic layer 150 and the reflective layer 160 by the etching process.

Next, the mask may be removed and the first electrode 115 may be formed. The first electrode 115 may be formed so as to be in contact with the upper surface of the first conductive semiconductor layer 110 adjacent to the growth substrate 101, have.

Next, a conductive support member 175 may be formed on the first electrode 115. The conductive support member 175 may support the light emitting structure layer 135 and may provide power to the light emitting structure layer 135 together with the first electrode 115. The conductive support member 175 may include at least one of, for example, Cu, Au, W, Al, Ni, Mo, Si, Ge, GaAs, ZnO or Sic.

Referring to FIG. 20, the growth substrate 101 may be removed from the light emitting device of FIG.

The growth substrate 101 may be removed by at least one of laser lift off and etching.

As the growth substrate 101 is removed, the surface of the first conductivity type semiconductor layer 110 may be exposed. The light extracting pattern 111 may be formed on the first conductive semiconductor layer 110. The light extracting pattern 111 may have a random shape and arrangement, or may have a specific shape and arrangement.

Referring to FIG. 21, the light emitting structure layer 135 is subjected to isolation etching according to a unit chip region to separate the light emitting structure layers 135 into a plurality of light emitting structure layers 135. The isolation etch may be performed using, for example, dry etching such as ICP (Inductively Coupled Plasma) or wet etching using an etchant such as KOH, H ₂ SO ₄ , H ₃ PO ₄ , Do not.

The top surface of the ohmic layer 150 may be partially exposed by the isolation etching.

Next, as shown in FIG. 16, a protective layer 180 may be formed on the side surfaces of the light emitting structure layer 135 and the first conductive semiconductor layer 110. The passivation layer 180 may be formed of a material having electrical insulation and light transmitting properties, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and the like.

Next, the second electrode 131 may be formed on a part of the upper surface of the exposed ohmic layer 150. The second electrode 131 serves to supply power to the second conductivity type semiconductor layer 130.

As described above, since the first electrode 115 is formed to fill the via hole 210, the heat generated in the light emitting structure layer 135 can be effectively dissipated, Light generated in the active layer 120 can be prevented from being absorbed by the electrode because it is formed on the side surface of the light emitting structure layer 135, and the light extraction efficiency can be improved.

22 is a cross-sectional view of a light emitting device package including the light emitting device according to the embodiments.

Referring to FIG. 22, a light emitting device package according to embodiments includes a body 20, a first electrode layer 31 and a second electrode layer 32 provided on the body 20, And a molding member 40 surrounding the light emitting device 100. The first electrode layer 31 and the second electrode layer 32 are electrically connected to each other.

The body 20 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode layer 31 and the second electrode layer 32 are electrically isolated from each other and provide power to the light emitting device 100. The first electrode layer 31 and the second electrode layer 32 may increase the light efficiency by reflecting the light generated from the light emitting device 100 and may heat the heat generated from the light emitting device 100 to the outside As shown in FIG.

The light emitting device 100 may be mounted on the body 20 or on the first electrode layer 31 or the second electrode layer 32.

The light emitting device 100 may be electrically connected to the first electrode layer 31 and the second electrode layer 32 by a wire, flip chip, or die bonding method.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.

23 is a view illustrating a backlight unit using the light emitting device package according to the embodiments. However, the backlight unit 1100 of Fig. 23 is an example of the illumination system, and the invention is not limited thereto.

23, the backlight unit 1100 includes a bottom frame 1140, a light guide member 1120 disposed in the bottom frame 1140, at least one side surface of the light guide member 1120, And a light emitting module 1110 disposed in the light emitting module 1110. [ A reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may be formed as a box having an open upper surface to accommodate the light guide member 1120, the light emitting module 1110 and the reflective sheet 1130, Or a resin material, but the present invention is not limited thereto.

The light emitting module 1110 may include a substrate and a light emitting device package according to a plurality of embodiments mounted on the substrate. The plurality of light emitting device packages may provide light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom frame 1140, thereby providing light toward at least one side of the light guide member 1120 can do.

The light emitting module 1110 may be disposed under the bottom frame 1140 and may provide light toward the bottom of the light guide member 1120 according to the design of the backlight unit 1100 The present invention is not limited thereto.

The light guide member 1120 may be disposed in the bottom frame 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel (not shown) by converting the light into a surface light source.

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be formed of one of acrylic resin type such as PMMA (polymethyl methacrylate), polyethylene terephthlate (PET), polycarbonate (PC), COC and PEN (polyethylene naphthalate) resin.

An optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light condensing sheet, a brightness increasing sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by laminating the diffusion sheet, the light condensing sheet, the brightness increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 diffuses the light emitted from the light emitting module 1110 evenly, and the diffused light can be condensed by the condensing sheet into a display panel (not shown). At this time, the light emitted from the light condensing sheet is randomly polarized light, and the brightness increasing sheet can increase the degree of polarization of the light emitted from the light condensing sheet. The light converging sheet may be, for example, a horizontal or / and a vertical prism sheet. Further, the brightness enhancement sheet may be, for example, a Dual Brightness Enhancement film. Further, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 can reflect light emitted through the lower surface of the light guide member 1120 toward the light exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having high reflectance, for example, PET, PC, or PVC resin, but is not limited thereto.

24 is a perspective view of a lighting unit using the light emitting device package according to the embodiments. However, the illumination unit 1200 of Fig. 24 is an example of the illumination system, and is not limited thereto.

24, the lighting unit 1200 includes a case body 1210, a light emitting module 1230 provided on the case body 1210, and a power supply unit And may include receiving connection terminals 1220.

The case body 1210 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1230 may include a substrate 300 and a light emitting device package 200 mounted on the substrate 300 according to at least one embodiment.

The substrate 300 may be a printed circuit pattern on an insulator. For example, the PCB 300 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI >

In addition, the substrate 300 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface is efficiently reflected, for example, white, silver, or the like.

The light emitting device package 200 according to at least one embodiment may be mounted on the substrate 300. The light emitting device package 200 may include at least one light emitting diode (LED). The light emitting diode may include a colored light emitting diode that emits red, green, blue, or white colored light, and a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1230 may be arranged to have various combinations of light emitting diodes to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI). Further, a fluorescent sheet may be further disposed on the path of light emitted from the light emitting module 1230, and the fluorescent sheet may change the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor. Light emitted from the light emitting module 1230 passes through the fluorescent sheet, .

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. 24, the connection terminal 1220 is connected to the external power source by being coupled with the external power source, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to an external power source through a wire.

In the above-described illumination system, at least one of a light guide member, a diffusion sheet, a light condensing sheet, a brightness increasing sheet, and a fluorescent sheet is disposed on the path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the reliability of the illumination system according to the embodiments can be improved by including the light emitting device package according to the embodiments.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (9)

A first conductivity type semiconductor layer including a first conductivity type semiconductor layer and a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a first conductivity type semiconductor layer including a first conductivity type semiconductor layer and a first conductivity type semiconductor layer, A light emitting structure layer including an active layer disposed on the light emitting layer;
An undoped semiconductor layer disposed between the first-conductivity-type semiconductor layer and the first-conductivity-type semiconductor layer;
A first electrode electrically connected to the first conductive semiconductor layer; And
And a second electrode electrically connected to the second conductive semiconductor layer,
And a metal cluster contained in the at least one inactive semiconductor layer. delete The method according to claim 1,
Wherein the un-doped semiconductor layer includes a first un GaN layer and a second un GaN layer. The method of claim 3,
The first un GaN layer is disposed on the second un GaN layer,
And the metal clusters are disposed under the first un GaN layer. 5. The method of claim 4,
Wherein the second un GaN layer is disposed closer to the active layer than the first un GaN layer,
Wherein the first un GaN layer has a thickness of 1 to 200 nm. 6. The method of claim 5,
And the thickness of the second un GaN layer is 1 to 50 nm. The method according to claim 1,
Wherein the first electrode is disposed below the light emitting structure layer,
The active layer, and the second conductivity type semiconductor layer, and is connected to the first conductivity type semiconductor layer. The method according to claim 1,
Wherein the metal cluster comprises one of Au, Ag, Ni, Ga, and In. 8. The method of claim 7,
The second electrode is disposed between the first electrode and the light emitting structure layer,
And a protective film disposed between the first electrode and the second electrode.

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