KR20130065451A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130065451A
KR20130065451A KR1020110132308A KR20110132308A KR20130065451A KR 20130065451 A KR20130065451 A KR 20130065451A KR 1020110132308 A KR1020110132308 A KR 1020110132308A KR 20110132308 A KR20110132308 A KR 20110132308A KR 20130065451 A KR20130065451 A KR 20130065451A
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South Korea
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layer
light emitting
emitting device
semiconductor layer
electrode layer
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KR1020110132308A
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Korean (ko)
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최운경
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엘지이노텍 주식회사
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Publication of KR20130065451A publication Critical patent/KR20130065451A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

PURPOSE: A light emitting device is provided to improve light emitting efficiency by maximizing the reflection efficiency of light. CONSTITUTION: A light emitting structure includes a first conductivity type semiconductor layer(222), an active layer(224), and a second conductivity type semiconductor layer(226). A first electrode layer is in contact with the second conductivity type semiconductor layer. A second electrode layer is in contact with the first conductivity type semiconductor layer. An insulation layer(240) is interposed between the first electrode layer and the second electrode layer. A reflection layer(250) faces the light emitting structure and places the first electrode layer between the reflection layer and the light emitting structure.

Description

[0001]

An embodiment of the present invention relates to a light emitting device.

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

Group III-V nitride semiconductors have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

Republic of Korea Patent Publication No. 10-2011-0041270 {Semiconductor light emitting device and its manufacturing method}

The embodiment provides a light emitting device capable of improving light emission efficiency by maximizing light reflection efficiency.

In one embodiment, a light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode layer in contact with the second conductive semiconductor layer; A second electrode layer in contact with the first conductive semiconductor layer; An insulating layer interposed between the first electrode layer and the second electrode layer; And a reflective layer facing the light emitting structure with the first electrode layer therebetween. The first electrode layer may include a conductive transparent layer formed between the second conductive semiconductor layer and the insulating layer. The insulating layer may be interposed between the first electrode layer and the reflective layer, and may be formed between the second conductive semiconductor layer and the reflective layer while surrounding the edge of the first electrode layer.

In another embodiment, a light emitting device includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A first electrode layer in contact with the second conductive semiconductor layer and having a plurality of first reflective layers formed to be spaced apart from each other at a predetermined interval; A second electrode layer in contact with the first conductive semiconductor layer; An insulating layer interposed between the first electrode layer and the second electrode layer; And a second reflective layer facing the light emitting structure with the first electrode layer therebetween.

The insulating layer may be formed between the second conductive semiconductor layer and the second reflective layer while surrounding the edge of the first electrode layer, and may be interposed between the first electrode layer and the second reflective layer. The first reflective layer may include the same material as the insulating layer.

The first reflective layer may be a non-directional reflective layer, the refractive index of the plurality of non-directional reflective layers may be smaller than the refractive index of the second conductive semiconductor layer, and the first electrode layer may be formed of the second conductive semiconductor layer. And a patterned conductive transparent layer formed between the insulating layers, and the non-directional reflective layer may be formed between the patterned conductive transparent layers.

In the above-described embodiments, the first electrode layer includes a material in ohmic contact with the second conductivity type semiconductor layer, and the second electrode layer includes a material in ohmic contact with the first conductivity type semiconductor layer. The insulating layer may cover the side of the active layer exposed to the outside between the first conductive semiconductor layer and the second conductive semiconductor layer. In addition, the active layer may include a material that generates light having an ultraviolet wavelength, and the first and second electrode layers may be connected to the submount in a flip manner.

In addition, the conductive transparent layer may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or indium gallium tin oxide (IGTO). ), Aluminum zinc oxide (AZO), antimony tin oxide (ATO), or at least one of gallium zinc oxide (GZO). The strength of the conductive transparent layer may be the same as that of the second conductive semiconductor layer and that of the insulating layer.

In addition, the conductive transparent layer may include a material having a Young's modulus of 70 Gpa or more and 181 Gpa or less.

According to the embodiment, by providing a reflective layer under the insulating layer, the light emitting efficiency of light having a specific wavelength, for example, a wavelength less than 380 nm can be improved, and the first electrode layer in contact with the second conductive semiconductor layer of the light emitting structure can be provided. Since a plurality of ODR layers made of a medium having a large difference in refractive index from the second conductivity type semiconductor layer are provided at predetermined intervals, the light emitted toward the first electrode layer is reflected as much as possible, thereby absorbing or scattering light at the first electrode layer and extinguished. It is possible to secure the luminous efficiency and to maximize the current dispersion effect.

1 is a cross-sectional view showing a light emitting device according to an embodiment.
2A to 2E illustrate a method of manufacturing the upper structure of the light emitting device of FIG. 1 according to the embodiment.
3 illustrates a method of manufacturing a lower structure of the light emitting device of FIG. 1 according to an embodiment.
4 is a cross-sectional view showing a light emitting device according to another embodiment.
5 illustrates a method of manufacturing the light emitting device illustrated in FIG. 4 according to an embodiment.
6 shows a light emitting device package according to the embodiment.
7 is a view showing an embodiment of a lighting device having a light emitting module.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings.

In the description of this embodiment, in the case of being described as being formed on the "upper" or "on or under" of each element, on or under is meant to encompass both that the two elements are in direct contact with each other or that one or more other elements are indirectly formed between the two elements do.

Also, when expressed as "on" or "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

First Embodiment

1 is a cross-sectional view illustrating a light emitting device 200 according to an embodiment.

The light emitting device 200 includes a substrate 210, a light emitting structure 220, first and second electrode layers 230 and 272, an insulating layer 240, a reflective layer 250, and first and second upper bumps. Metal layers 262 and 274, first and second bumps 264 and 276, first and second lower bump metal layers 266 and 278, first and second electrode pads 268 and 280, passivation layer 290 and submount 292.

The light emitting device 200 includes a plurality of compound semiconductor layers, for example, an LED using a compound semiconductor layer of Group III-V elements, and the LED may be a colored LED or ultraviolet (UV) light emitting light such as blue, green, or red. UV: UltraViolet) LED. The emitted light of the LED may be implemented using various semiconductors, but is not limited thereto.

The first and second electrode layers 230 and 272 of the light emitting device 200 having the flip bonding structure as shown in FIG. 1 are positioned on the sub mount 292 in a flip manner.

That is, the first electrode 230 of the light emitting device is connected to the first electrode pad 268 of the submount 292 using the first bump 264, and the second electrode 272 is connected to the second bump 276. ) Is connected to the second electrode pad 280 of the sub mount 292. The sub mount 292 may be made of a material having high thermal conductivity, for example, a semiconductor substrate. For example, it is made of a material such as silicon carbide (SiC), GaN, GaAs, Si. If the sub-mount 292 is made of Si, as shown in FIG. 1, a protective layer 290 may be further provided.

The first upper bump metal layer 262 and the first lower bump metal layer 266 may serve to indicate a position where the first bump 264 is to be positioned, and the second upper bump metal layer 274 and the second lower bump metal layer 266 may be disposed. 278 serves to indicate where to place the second bump 276.

Therefore, the first upper bump metal layer 262 and the first lower metal layer 266 may partially overlap each other vertically. In addition, the second upper bump metal layer 274 and the second lower bump metal layer 278 may be partially overlapped vertically.

According to an embodiment, the first bump 264 may have a length smaller than the second bump 276.

The light emitting structure 220 and the submount 292 may be spaced apart from each other by the first bump 264 and the second bump 276.

The passivation layer 290 and the sub mount 292 may have a flat top surface for structural stability of the light emitting device 200.

The first and second upper bump metal layers 262 and 274, the first and second bumps 264 and 276, the first and second lower bump metal layers 266 and 278, and the first and second electrode pads described above. 268 and 280, the protective layer 290 and the sub-mount 292 is only an embodiment for the understanding of the embodiment, the present embodiment described below is not limited thereto.

The substrate 210 may be formed of a material suitable for semiconductor growth, and may be formed of a material having transparency. The substrate 210 may include a semiconductor compound, and for example, may be formed of at least one of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, It does not limit to this.

In addition, the substrate 210 may have a mechanical strength enough to be separated into a separate chip through a scribing process and a breaking process without causing warping of the entire nitride semiconductor.

Next, the light emitting structure 220 is formed below the substrate 210. The light emitting structure 220 may have a form in which the first conductive semiconductor layer 222, the active layer 224, and the second conductive semiconductor layer 226 are sequentially stacked.

The first conductivity type semiconductor layer 222 is formed on the active layer 224 and may be formed of a semiconductor compound. It may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the first conductivity type dopant may be doped. For example, the first conductivity type semiconductor layer 222 has a composition formula of Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). The semiconductor material may be formed of any one or more of InAlGaN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the first conductivity type semiconductor layer 222 is an N type semiconductor layer, the first conductivity type dopant may include an N type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 222 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 224 is formed on the second conductivity type semiconductor layer 226, and has a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, and a quantum dot. It may include either a structure or a quantum line structure. The active layer 224 is formed of a well layer and a barrier layer, for example, InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs), / AlGaAs using a compound semiconductor material of Group III-V elements. , GaP (InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer. In particular, the active layer 224 according to the embodiment may generate light of an ultraviolet wavelength.

A conductive clad layer (not shown) may be formed between the active layer 224 and the first conductive semiconductor layer 222 or between the active layer 224 and the second conductive semiconductor layer 226.

The conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer 224. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, superlattice structure, or the like. In addition, the conductive clad layer may be doped with n-type or p-type.

The second conductivity type semiconductor layer 226 may be formed on the first electrode layer 230.

The second conductive semiconductor layer 226 may be formed of a semiconductor compound. The second conductive semiconductor layer 226 may be implemented with compound semiconductors such as Groups 3-5 and 2-6, and may be doped with the second conductive dopant. For example, a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1) or AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP It may be formed of any one or more of. When the second conductivity type semiconductor layer 226 is a P type semiconductor layer, the second conductivity type dopant may be a P type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity-type semiconductor layer 226 may be formed as a single layer or a multilayer, but is not limited thereto.

Next, the first electrode layer 230 extends in parallel with the active layer 224 and is in contact with the second conductivity type semiconductor layer 226. In addition, the first electrode layer 230 is formed between the second conductive semiconductor layer 226 and the insulating layer 240 and between the second conductive semiconductor layer 226 and the reflective layer 250.

According to an embodiment, the first electrode layer 230 may be implemented as a transparent layer having a conductivity (hereinafter referred to as a conductive bright layer).

If the first electrode layer 230 is formed of a soft metal, the second conductive semiconductor layer 226 and the insulating layer 240 are hard, so that the soft first electrode layer 230 is hard. The rigid second conductivity type semiconductor layer 226 and the insulating layer 240 are very different from the material properties thereof, and may be vulnerable to thermal expansion coefficient, strength, and reliability. In addition, since the role of the first electrode layer 230 basically has the purpose of forming ohmic, it may not be suitable for obtaining high reflectivity.

Therefore, in the present embodiment, the material includes the same or similar material as the second conductive semiconductor layer 226 and the insulating layer 240 in ohmic contact with the second conductive semiconductor layer 226, and the reflectance is increased. A conductive transparent layer that can be maximized is used as the first electrode layer 230.

Strength can be described as a Young's Modulus value that indicates the mechanical properties of the material. In the case of gallium nitride semiconductors, the Young's modulus value is known to be 150 GPa or more. In addition, in the case of representative SiO 2 used as the insulating layer material, the Young's modulus value is known to be 70 GPa or more. Therefore, when the conductive transparent layer uses a material having an intermediate value of 70 Gpa or more and 150 GPa or less, the problem resulting from the difference in strength can be minimized. Typically, indium tin oxide (ITO) has 118 Gpa, which can maximize the reflectance and solve the problem of intensity difference.

The conductive transparent layer 230 according to the embodiment may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or IGTO (IGTO). It may comprise at least one of indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO) or gallium zinc oxide (GZO).

Next, the second electrode layer 272 is in contact with the first conductivity type semiconductor layer 222 and may be formed of a metal. For example, the second electrode layer 272 may be made of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof. In addition, the second electrode layer 272 may be formed in a single layer or multiple layers of a reflective electrode material having ohmic characteristics.

For example, the second electrode layer 272 may include the above-described metal material, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium zinc oxide (IGZO). ), Indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / It may include at least one of Au / ITO, but is not limited to such materials. The second electrode layer 272 may include a material in ohmic contact with the first conductivity-type semiconductor layer 222. If the second electrode layer 272 plays an ohmic role, a separate ohmic layer (not shown) may not be formed.

Next, the insulating layer 240 is interposed between the first electrode layer 230 and the second electrode layer 272 to electrically insulate the first electrode layer 230 and the second electrode layer 272. In the illustrated state, the insulating layer 240 is interposed between the first electrode layer 230 and the second electrode layer 272 around the active layer 224. In addition, the insulating layer 240 covers the side of the active layer 224 exposed to the outside between the first and second conductivity-type semiconductor layers 222 and 226. This is to prevent this because the side of the active layer 224 is exposed, because it may be electrically affected from the outside through the exposed surface of the active layer 224.

In addition, the insulating layer 240 is interposed between the first electrode layer 230 and the reflective layer 250. In particular, the insulating layer 240 is formed between the second conductive semiconductor layer 226 and the reflective layer 250 while surrounding the edge (or sidewall) of the first electrode layer 230. Therefore, the first electrode layer 230 is formed under the second conductive semiconductor layer 226 so as not to protrude from the side line of the second conductive semiconductor layer 226.

The insulating layer 240 may be formed of, for example, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , but is not limited thereto. The thickness of the first electrode layer 230 or the insulating layer 240 described above may be expressed by Equation 1 below.

Figure pat00001

Here, d represents the thickness of the first electrode layer 230 or the insulating layer 240, m is an integer, λ represents the wavelength of the light passing through each layer 230 or 240, N is each layer 230 or Refractive index of 240).

The reflective layer 250 is formed to face the light emitting structure 220 with the first electrode layer 230 therebetween. When the wavelength of light emitted from the active layer 224 is, for example, 380 nm or more, when the first electrode layer 230 is used as silver (Ag), the light emitted from the active layer 224 is formed by the first electrode layer 230. Can be reflected. However, when the wavelength of light emitted from the active layer 224 is, for example, an ultraviolet wavelength smaller than 380 nm, the level of reflecting the light emitted from the active layer 224 in the first electrode layer 230 made of Ag is It can be very weak. In this case, the reflective layer 250 serves to reflect light not reflected by the first electrode layer 230. The reflective layer 250 may be made of a metal material, and may be formed, for example, from a metal material including Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and an optional combination thereof. have.

As described above, according to the embodiment, since the reflective layer 250 is formed to face the light emitting structure 220 with the first electrode layer 230 therebetween, the soft material such as metal as the first electrode layer 230. Instead, a material similar to that of the second conductivity type semiconductor layer 226 may be used, such as a conductive transparent layer. Therefore, it is possible to improve the reflectance of light having a specific wavelength such as ultraviolet light. In addition, since the second conductive semiconductor layer 226, the first electrode layer 230, and the insulating layer 240 adjacent to each other have very similar material properties, reliability of the thermal expansion coefficient and the strength of the light emitting device can be improved. .

2A to 2E illustrate a method of manufacturing the upper structures 210, 220, 230, 240, 250, 262, 272 and 274 of the light emitting device 200 of FIG. 1 according to an embodiment.

Referring to FIG. 2A, the light emitting structure 220 is grown on the substrate 210. The substrate 210 may be formed of at least one of sapphire (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

The light emitting structure 220 may be formed by sequentially growing the first conductive semiconductor layer 222, the active layer 224, and the second conductive semiconductor layer 226 on the substrate 210. The light emitting structure 220 may be formed of, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), or molecular beam growth. It may be formed using a method such as Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), but is not limited thereto.

A buffer layer (not shown) and / or an undoped nitride layer (not shown) may be formed between the light emitting structure 220 and the substrate 210 to alleviate the lattice constant difference.

Thereafter, mesa etching is performed to expose the first conductivity-type semiconductor layer 222 in each unit chip region as shown in FIG. 2A. The exposed region 222A of the first conductivity type semiconductor layer 222 is a region for forming the second electrode layer 272 and may be formed on one side or the center of the chip.

Next, referring to FIG. 2B, a conductive transparent layer is formed as the first electrode layer 230 on the second conductive semiconductor layer 226. In this case, the outermost upper surface 226A of the second conductive semiconductor layer 226 is exposed to form the first electrode layer 230. To this end, for example, a region in which the first electrode layer 230 is not formed is coated with a photoresist, and after forming the first electrode layer 230, the photoresist is removed.

Next, as shown in FIG. 2C, a second electrode layer 272 is formed on the upper portion 222A of the first conductivity-type semiconductor layer 222 exposed in each unit chip region. For this purpose, for example, a region where the second electrode layer 272 is not formed is coated with a photoresist, and after forming the second electrode layer 272, the photoresist is removed.

Next, referring to FIG. 2D, a region 222A of the first conductivity-type semiconductor layer 222 exposed between the second electrode layer 272 and the light emitting structure 220, and the first electrode layer in the light emitting structure 220 are described. An insulating layer 240 is formed on the upper portion 226A of the second conductivity-type semiconductor layer 226 and the upper portion 230A of the first electrode layer 230 exposed by 230. In this case, the insulating layer 240 is formed on the upper portion 222A of the second conductive semiconductor layer 226 so as to surround the edge of the first electrode layer 230. 2D, the insulating layer 240 may not be formed on the first electrode layer 230 and / or may be formed on the second electrode layer 272, but is not limited thereto. Do not.

Next, referring to FIG. 2E, the reflective layer 250 is formed to face the light emitting structure 220, particularly the active layer 224, with the first electrode layer 230 therebetween. Thereafter, the first and second upper bump metal layers 262 and 274 are formed by a conventional process.

3 illustrates a method of manufacturing the lower structures 266, 268, 278, 280, 290, and 292 of the light emitting device 200 of FIG. 1 according to an embodiment.

Referring to FIG. 3, first and second electrode pads 268 and 280 are formed on a submount 292 in a separate process while the processes shown in FIGS. 2A to 2E are performed. First and second lower bump metal layers 266 and 278 are formed on each of the second electrode pads 268 and 280. As described above, when the submount 292 is made of Si, a protective layer 290 is further formed on the submount 292, and in this case, the first and second electrodes are disposed on the protective layer 290. Pads 268 and 280 are formed.

Meanwhile, the lapping and polishing processes are performed on the resultant shown in FIG. 2E. Thereafter, the structure is cut along the unit chip area through a chip cutting process. The chip cutting process includes, for example, a braking process in which a physical force is applied and separated using a blade, a laser scribing process in which a chip is separated by irradiating the laser at a chip boundary, an etching process including a wet etching or a dry etching Processes, and the like.

Next, the substrate 210 is rotated to be disposed at the top side in the separated unit chip, and then combined with the resultant shown in FIG. 3. In this case, as shown in FIG. 1, the first upper bump metal layer 262 and the first lower bump metal layer 266 are coupled by the first bump 264, and the second upper bump is connected by the second bump 276. The metal layer 274 and the second lower bump metal layer 278 are combined.

The light emitting device shown in FIG. 1 is not limited to the manufacturing method shown in FIGS. 2A to 2E and 3 and can be manufactured by various manufacturing methods.

Second Embodiment

4 is a cross-sectional view illustrating a light emitting device 300 according to another embodiment.

The light emitting device 300 may include a substrate 210, a light emitting structure 220, first and second electrode layers 330 and 272 including a plurality of first reflective layers 334, an insulating layer 340, and a second reflective layer ( 250), first and second upper bump metal layers 262 and 274, first and second bumps 264 and 276, first and second lower bump metal layers 266 and 278, and first and second electrode pads. 268 and 280, protective layer 290, and sub-mount 292.

1 and 4, substrate 210, light emitting structure 220, first and second upper bump metal layers 262 and 274, first and second bumps 264 and 276, first and second Since the lower bump metal layers 266 and 278, the first and second electrode pads 268 and 280, the protective layer 290, and the sub-mount 292 are generally similar, a detailed description thereof will be omitted. In addition, since the second reflective layer 250 illustrated in FIG. 4 corresponds to the reflective layer 250 illustrated in FIG. 1, only the names thereof are substantially the same, and detailed description thereof will be omitted.

The first electrode layer 330 of the light emitting device 300 illustrated in FIG. 4 extends in parallel with the active layer 222 and is in contact with the second conductivity type semiconductor layer 226. In addition, the first electrode layer 330 has a plurality of first reflective layers 334 formed to be spaced apart from each other at predetermined intervals.

As illustrated, the first electrode layer 330 further includes a patterned conductive transparent layer 332 formed between the second conductive semiconductor layer 226 and the insulating layer 240. In this case, the plurality of first reflective layers 334 are formed while being spaced apart at predetermined intervals between the patterned conductive transparent layers 332.

The conductive transparent layer 332 illustrated in FIG. 4 plays the same role as the conductive transparent layer implementing the first electrode layer 230 illustrated in FIG. 1 and may be formed of the same material. The plurality of first reflective layers 334 may be omnidirectional reflective layers (ODRs), and may be formed of the same material as the insulating layer 240, for example.

The refractive index of the non-directional reflective layer 334 is smaller than the refractive index of the second conductive semiconductor layer 226. For example, when the second conductivity-type semiconductor layer 226 is implemented with GaN having a refractive index of 2.4, the non-directional reflective layer 334 is a medium having a refractive index smaller than GaN, such as vacuum, air, water, SiO 2 , and Si 3 N. Can be implemented as 4 .

Therefore, as shown in FIG. 4, the light emitting device according to the present exemplary embodiment reflects some of all light emitted toward the first electrode layer 330 through the conductive transparent layer 324 and some of the light of the first reflective layer 334. That is, by reflecting at an omnidirectional angle through the ODR layer, a portion of the light absorbed and extinguished through the first electrode layer 230 may be reflected to improve luminous efficiency, and the patterned conductive transparent layer 332 may be a chip current. It can also have a dispersion effect.

5A to 5C illustrate a method of manufacturing the light emitting device 300 shown in FIG. 4 according to an embodiment.

In order to manufacture the light emitting device 300 illustrated in FIG. 4, as illustrated in FIGS. 2A and 2B, the first electrode layer 230 is formed on the light emitting structure 220.

Next, the first electrode part 230 is patterned to form a patterned conductive transparent layer 332 constituting the first electrode layer 330 on the second conductive semiconductor layer 226 as shown in FIG. 5A. do.

Next, as illustrated in FIG. 5B, an insulating layer 340 is formed. When the first reflective layer 334 is to be made of the same material as the insulating layer 340, the insulating layer 340 is buried between the patterned conductive transparent layer 332 to form the first reflective layer 334.

As described above, the conductive transparent layer 230 illustrated in FIG. 2B is patterned, and an insulating layer 340 is formed on the resultant to form the first reflective layer 334, thereby providing a current dispersion effect.

Next, as shown in FIG. 5C, the second reflective layer 250 and the first and second upper bump metal layers 262 and 274 are formed. Subsequent processes are the same as the manufacturing method of the light emitting device shown in FIG. 1, and thus description thereof will be omitted.

The light emitting device 300 shown in FIG. 4 is not limited to the manufacturing method shown in FIGS. 2A, 2B, 5A to 5C, and may be manufactured by various manufacturing methods.

In the above-described embodiment of the manufacturing method of the light emitting device, the order of each process may be changed, and another process may be added or some processes may be omitted between each process.

6 shows a light emitting device package according to the embodiment.

The light emitting device package 500 includes a package body 510, lead frames 512 and 514, a light emitting device 520, a reflecting plate 525, and a resin layer 540.

A cavity may be formed on an upper surface of the package body 510. The side wall of the cavity may be formed to be inclined. The package body 510 may be formed of a substrate having good insulation or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like. It may have a structure in which a plurality of substrates are stacked. Embodiments are not limited to the material, structure, and shape of the package body 510.

The lead frames 512 and 514 are disposed in the package body 510 to be electrically separated from each other in consideration of heat dissipation or mounting of the light emitting device 520. The light emitting device 520 is electrically connected to the lead frames 512 and 514. The light emitting device 520 may be the light emitting devices 200 and 300 illustrated in the embodiment of FIGS. 1 and 4.

The reflective plate 525 is formed on the side wall of the cavity of the package body 510 to direct light emitted from the light emitting element 520 in a predetermined direction. The reflector plate 525 is made of a light reflective material, and may be, for example, a metal coating or a metal flake.

The resin layer 540 surrounds the light emitting device 520 positioned in the cavity of the package body 510 to protect the light emitting device 520 from the external environment. The resin layer 540 may be made of a colorless transparent polymer resin material such as epoxy or silicon. The resin layer 540 may include a phosphor to change the wavelength of light emitted from the light emitting device 520.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package.

Yet another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp. .

7 is a view showing an embodiment of a lighting device having a light emitting module.

The lighting device may include a light emitting module 20 and a light guide 30 for guiding the emission directivity angle of the light emitted from the light emitting module 20.

The light emitting module 20 may include at least one light emitting device 22 provided on a printed circuit board (PCB) 21, and a plurality of light emitting devices 22 may be disposed on the circuit board 21. It can be arranged spaced apart from. The light emitting device 22 may be, for example, a light emitting diode (LED) and may be the light emitting devices 200 and 300 illustrated in the embodiments of FIGS. 1 and 4.

The light guide 30 focuses the light emitted from the light emitting module 20 so that the light guide 30 may be emitted through the opening with a predetermined direction angle, and may have a mirror surface on the inner surface. Here, the light emitting module 20 and the light guide 30 may be spaced apart by a predetermined interval (d).

As described above, the lighting apparatus may be used as an illumination lamp that focuses a plurality of light emitting elements 22 to obtain light, and is particularly embedded in a ceiling or a wall of the building to expose the opening side of the light guide 30. It is available by purchase light (downlight).

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

22, 200, 300, and 520: light emitting element 210: substrate
220: light emitting structure 222: first conductive semiconductor layer
224: active layer 226: second conductive semiconductor layer
230, 330: first electrode layer 240, 340: insulating layer
250: reflective layer, second reflective layer 262, 274: upper bump metal layer
264 and 276 bump 266 and 278 lower bump metal layer
268 and 280: electrode pad 290: protective layer
292: submount 332: patterned conductive transparent layer
500: light emitting device package 510: package body
512 and 514: lead frame 520: light emitting element
525: reflector 530: wire
540: resin layer

Claims (19)

A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode layer in contact with the second conductive semiconductor layer;
A second electrode layer in contact with the first conductive semiconductor layer;
An insulating layer interposed between the first electrode layer and the second electrode layer; And
And a reflective layer facing the light emitting structure with the first electrode layer therebetween. The light emitting device of claim 1, wherein the first electrode layer comprises a conductive transparent layer formed between the second conductive semiconductor layer and the insulating layer. The light emitting device of claim 1, wherein the insulating layer is interposed between the first electrode layer and the reflective layer. The light emitting device of claim 1, wherein the insulating layer is formed between the second conductive semiconductor layer and the reflective layer while surrounding the edge of the first electrode layer. A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A first electrode layer in contact with the second conductive semiconductor layer and having a plurality of first reflective layers formed to be spaced apart from each other at a predetermined interval;
A second electrode layer in contact with the first conductive semiconductor layer;
An insulating layer interposed between the first electrode layer and the second electrode layer; And
And a second reflective layer facing the light emitting structure with the first electrode layer therebetween. The light emitting device of claim 5, wherein the insulating layer is formed between the second conductive semiconductor layer and the second reflective layer while surrounding the edge of the first electrode layer. The light emitting device of claim 5, wherein the insulating layer is interposed between the first electrode layer and the second reflective layer. The light emitting device of claim 5, wherein the first reflective layer comprises the same material as the insulating layer. The light emitting device of claim 1, wherein the first electrode layer comprises a material in ohmic contact with the second conductivity-type semiconductor layer. The light emitting device of claim 1, wherein the second electrode layer comprises a material in ohmic contact with the first conductivity-type semiconductor layer. The method of claim 1 or 5, wherein the insulating layer
And a side portion of the active layer exposed to the outside between the first conductive semiconductor layer and the second conductive semiconductor layer. The light emitting device of claim 1 or 5, wherein the active layer comprises a material that generates light having an ultraviolet wavelength. The light emitting device of claim 1, wherein the first and second electrode layers are connected to the sub-mount in a flip manner. The light emitting device of claim 5, wherein the first reflective layer is a non-directional reflective layer. The light emitting device of claim 14, wherein a refractive index of the plurality of non-directional reflective layers is smaller than that of the second conductive semiconductor layer. 15. The method of claim 14, wherein the first electrode layer comprises a patterned conductive transparent layer formed between the second conductive semiconductor layer and the insulating layer,
The non-directional reflective layer is formed between the patterned transparent conductive layer. The method of claim 2 or 16, wherein the conductive transparent layer is
Indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc Light emitting device comprising at least one of oxide), antimony tin oxide (ATO) or gallium zinc oxide (GZO). The light emitting device according to claim 2 or 16, wherein the strength of the conductive transparent layer is the same as that of the second conductive semiconductor layer and the strength of the insulating layer. The light emitting device of claim 18, wherein the conductive transparent layer has a Young's modulus of 70 Gpa or more and 150 Gpa or less.
KR1020110132308A 2011-12-09 2011-12-09 Light emitting device KR20130065451A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150089587A (en) * 2014-01-28 2015-08-05 엘지이노텍 주식회사 Light Emitting Device Package
KR20150146161A (en) * 2014-06-23 2015-12-31 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR20180023778A (en) * 2015-07-22 2018-03-07 엘지이노텍 주식회사 Light emitting device package
KR20180066554A (en) * 2016-12-09 2018-06-19 엘지이노텍 주식회사 Semiconductor device
US10074773B2 (en) 2017-01-10 2018-09-11 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150089587A (en) * 2014-01-28 2015-08-05 엘지이노텍 주식회사 Light Emitting Device Package
KR20150146161A (en) * 2014-06-23 2015-12-31 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR20180023778A (en) * 2015-07-22 2018-03-07 엘지이노텍 주식회사 Light emitting device package
CN107924967A (en) * 2015-07-22 2018-04-17 Lg 伊诺特有限公司 Light-emitting element package part
US10535804B2 (en) 2015-07-22 2020-01-14 Lg Innotek Co., Ltd. Light-emitting device package
KR20180066554A (en) * 2016-12-09 2018-06-19 엘지이노텍 주식회사 Semiconductor device
US10074773B2 (en) 2017-01-10 2018-09-11 Samsung Electronics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same

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