CN109545928B - Deep ultraviolet LED epitaxial chip normal mounting structure - Google Patents
Deep ultraviolet LED epitaxial chip normal mounting structure Download PDFInfo
- Publication number
- CN109545928B CN109545928B CN201811614645.9A CN201811614645A CN109545928B CN 109545928 B CN109545928 B CN 109545928B CN 201811614645 A CN201811614645 A CN 201811614645A CN 109545928 B CN109545928 B CN 109545928B
- Authority
- CN
- China
- Prior art keywords
- layer
- epitaxial
- substrate
- type
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 73
- 239000002061 nanopillar Substances 0.000 claims description 33
- 230000000903 blocking effect Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 361
- 239000000463 material Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 21
- 230000000873 masking effect Effects 0.000 description 13
- 239000004793 Polystyrene Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229920002223 polystyrene Polymers 0.000 description 10
- 229910052681 coesite Inorganic materials 0.000 description 9
- 229910052906 cristobalite Inorganic materials 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052682 stishovite Inorganic materials 0.000 description 9
- 229910052905 tridymite Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000012858 packaging process Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention belongs to the technical field of ultraviolet LEDs, and particularly relates to a deep ultraviolet LED epitaxial chip forward mounting structure. The invention provides a deep ultraviolet LED epitaxial chip forward mounting structure, which comprises: the epitaxial chip comprises an n-type electrode, a p-type electrode and an epitaxial chip body; the n-type electrode and the p-type electrode are arranged on the same side of the epitaxial chip body; the epitaxial chip body comprises a first substrate, a first epitaxial layer and an electrode plate which are sequentially arranged; the first epitaxial layer comprises a buffer layer, an AlN/AlGaN superlattice and an n + type AlGaN layer which are sequentially overlapped, and the buffer layer is overlapped with the first substrate; the n-type electrode is electrically connected with the first substrate, and the p-type electrode is electrically connected with the electrode plate; the buffer layer is a BN layer or an AlN layer of a heterostructure.
Description
Technical Field
The invention belongs to the technical field of ultraviolet LEDs, and particularly relates to a deep ultraviolet LED epitaxial chip forward mounting structure.
Background
With the development of deep ultraviolet LED preparation technology, the improvement of output performance and the reduction of production cost, compared with the existing traditional ultraviolet light source, the deep ultraviolet LED has the advantages of long theoretical service life, high efficiency, stability, reliability, uniform brightness, no toxic substance and the like, is widely applied in the fields of sterilization, disinfection, high-density lithography and the like, and is more and more concerned by the semiconductor illumination industry in recent years. However, in the processes of patterning a substrate template, growing an epitaxial material and the like, the problems of poor crystal quality and the like caused by the fact that cracks and stress residues exist between epitaxial layer structures and the fact that large thermal mismatch and lattice mismatch exist between a heterogeneous substrate and the epitaxial layer material at present; meanwhile, due to the fact that the structural design is unreasonable, the light absorption phenomenon between the internal contact layer material and the epitaxial layer structure in the deep ultraviolet LED epitaxial wafer causes the problems of low luminous efficiency, poor brightness and the like.
Disclosure of Invention
In view of the above, the invention provides a deep ultraviolet LED epitaxial chip normal mounting structure, which is used to solve the problems in the prior art that cracks, lattice mismatch and internal residual stress exist between epitaxial layer structures, a large lattice mismatch exists between a substrate and an epitaxial layer, so that the crystal quality is poor, and meanwhile, due to the fact that the structural design is not reasonable, the light absorption phenomenon between an internal contact layer material and the epitaxial layer structure in the deep ultraviolet LED epitaxial chip causes low light emitting efficiency and poor brightness.
The specific technical scheme of the invention is as follows:
a deep ultraviolet LED epitaxial chip normal mounting structure comprises: the epitaxial chip comprises an n-type electrode, a p-type electrode and an epitaxial chip body;
the n-type electrode and the p-type electrode are arranged on the same side of the epitaxial chip body;
the epitaxial chip body comprises a first substrate, a first epitaxial layer and an electrode plate which are sequentially arranged;
the first epitaxial layer comprises a buffer layer, an AlN/AlGaN superlattice and n which are sequentially stacked+The buffer layer is overlapped with the first substrate;
the n-type electrode is electrically connected with the first substrate, and the p-type electrode is electrically connected with the electrode plate;
the buffer layer is a BN layer or an AlN layer of a heterostructure.
Preferably, the epitaxial chip body further comprises a second epitaxial layer;
the second epitaxial layer comprises n sequentially stacked-The semiconductor device comprises a type AlGaN layer, a multi-quantum well active region, a p-type AlGaN electron barrier layer and a p-type GaN layer;
the second epitaxial layer is arranged between the first epitaxial layer and the electrode plate;
n is-Type AlGaN layer and the n+The type AlGaN layers are arranged in a superposed mode.
Preferably, the second epitaxial layer is provided with a nano-pillar;
the nano-pillar penetrates through the n-Type AlGaN layerThe multi-quantum well active region, the p-type AlGaN electron blocking layer and the p-type GaN layer;
the nano-pillars are nano-scale gaps, and the width of the nano-scale gaps is determined by the n-The size from the type AlGaN layer to the p-type GaN layer is increased in sequence.
Preferably, the epitaxial chip body further comprises a second substrate;
the second substrate is arranged between the second epitaxial layer and the electrode plate through a bonding layer.
Preferably, a third epitaxial layer is arranged on the surface of the second substrate facing the electrode plate in an overlapping manner;
the third epitaxial layer includes a thin film conductive layer.
Preferably, a metal reflecting layer is stacked between the bonding layer and the second epitaxial layer.
Preferably, the first substrate, the buffer layer and the AlN/AlGaN superlattice are provided with grooves;
the groove penetrates through the first substrate, the buffer layer and the AlN/AlGaN superlattice.
Preferably, an insulating layer and a first metal bolt are arranged in the groove;
the insulating layer surrounds the first metal plug.
Preferably, the first substrate is a sapphire substrate;
the second substrate is a silicon substrate.
Preferably, a passivation layer is arranged on the side surface of the epitaxial chip body.
In summary, the present invention provides a deep ultraviolet LED epitaxial chip normal mounting structure, including: the epitaxial chip comprises an n-type electrode, a p-type electrode and an epitaxial chip body; the n-type electrode and the p-type electrode are arranged on the same side of the epitaxial chip body; the epitaxial chip body comprises a first substrate, a first epitaxial layer and an electrode plate which are sequentially arranged; the first epitaxial layer comprises a buffer layer, an AlN/AlGaN superlattice and n which are sequentially stacked+The buffer layer is overlapped with the first substrate; the n-type electrode is electrically connected with the first substrateThe p-type electrode is electrically connected with the electrode plate; the buffer layer is a BN layer or an AlN layer of a heterostructure. In the embodiment of the invention, the buffer layer is superposed on the surface of the first substrate, the buffer layer is a BN layer or an AlN layer of a heterostructure, the BN material and the AlN material have high melting points and good thermal stability, the stress between deep ultraviolet LED epitaxial layer structures can be effectively relieved, the material quality and the crystal transverse growth rate in the deep ultraviolet LED epitaxial layer structures are improved to the greatest extent, and the dislocation density is reduced; in addition, the obstacle that the first substrate and the buffer layer in the LED epitaxial structure are difficult to peel off in the later deep ultraviolet LED packaging process is avoided, and the damage and the like possibly occurring in the peeling process are even weakened; the n-type electrode and the p-type electrode are arranged on the same side of the epitaxial chip body, and the p-type electrode is LED out, so that the forward mounting process of the deep ultraviolet LED epitaxial chip is facilitated, the operation difficulty is greatly reduced, the packaging process is facilitated, and the light emitting efficiency and the brightness are effectively improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED epitaxial chip normal mounting structure provided in an embodiment of the present invention;
illustration of the drawings: 1. a first substrate; 2. a buffer layer; AlGaN/AlGaN superlattices; n is 4.n+A type AlGaN layer; 5. a nanopillar; 6. a multiple quantum well active region; n is 7.n-A type AlGaN layer; a p-type AlGaN electron blocking layer; a p-type GaN layer; 10. a metal reflective layer; an n-type electrode; 12. a bonding layer; 13. a second substrate; 14. a thin film conductive layer; a p-type electrode; 16. a passivation layer; 17. a first metal plug; 18. an insulating layer; 19. a contact layer; 20. a protective layer; 21. an isolation layer; 22. an electrode plate; 23. gold thread; 24. a second metal plug; 25. and a third metal bolt.
Detailed Description
The invention provides a deep ultraviolet LED epitaxial chip normal mounting structure which is used for solving the problems of poor crystal quality caused by cracks, lattice mismatch and internal residual stress existing between epitaxial layer structures and larger lattice mismatch existing between a substrate and an epitaxial layer in the prior art, and low luminous efficiency, poor brightness and the like caused by the fact that the structural design is unreasonable and the light absorption phenomenon exists between an internal contact layer material and the epitaxial layer structure in a deep ultraviolet LED epitaxial wafer.
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a deep ultraviolet LED epitaxial chip normal mounting structure according to an embodiment of the present invention.
The invention provides a deep ultraviolet LED epitaxial chip normal mounting structure, which comprises: an n-type electrode 11, a p-type electrode 15 and an epitaxial chip body;
the n-type electrode 11 and the p-type electrode 15 are arranged on the same side of the epitaxial chip body;
the epitaxial chip body comprises a first substrate 1, a first epitaxial layer and an electrode plate 22 which are arranged in sequence;
the first epitaxial layer comprises a buffer layer 2, an AlN/AlGaN superlattice 3 and n which are sequentially overlapped+The AlGaN type layer 4, the buffer layer 2 and the first substrate 1 are arranged in an overlapping mode;
the n-type electrode 11 is electrically connected to the first substrate 1, and the p-type electrode 15 is electrically connected to the electrode plate 22;
the buffer layer 2 is a hetero-structured BN layer or AlN layer.
In the embodiment of the invention, the buffer layer 2 is superposed on the surface of the first substrate 1, the buffer layer 2 is a BN layer or an AlN layer with a heterostructure, the BN material and the AlN material have high melting points and good thermal stability, the stress between deep ultraviolet LED epitaxial layer structures can be effectively relieved, the material quality and the transverse crystal growth rate in the deep ultraviolet LED epitaxial layer structures are improved to the greatest extent, and the dislocation density is reduced; in addition, the obstacle that the first substrate 1 and the buffer layer 2 in the LED epitaxial structure are difficult to strip in the later deep ultraviolet LED packaging process is avoided, and the damage and the like possibly occurring in the stripping process are even weakened; the n-type electrode 11 and the p-type electrode 15 are arranged on the same side of the epitaxial chip body, and the p-type electrode 15 is LED out, so that the forward mounting process of the deep ultraviolet LED epitaxial chip is facilitated, the operation difficulty is greatly reduced, the packaging process is facilitated, and the light emitting efficiency and the brightness are effectively improved.
The above is a detailed description of an embodiment of a deep ultraviolet LED epitaxial chip normal mounting structure provided by an embodiment of the present invention, and the following is a detailed description of another embodiment of the deep ultraviolet LED epitaxial chip normal mounting structure provided by an embodiment of the present invention.
The invention provides a deep ultraviolet LED epitaxial chip normal mounting structure, which comprises: an n-type electrode 11, a p-type electrode 15 and an epitaxial chip body;
the n-type electrode 11 and the p-type electrode 15 are arranged on the same side of the epitaxial chip body;
the epitaxial chip body comprises a first substrate 1, a first epitaxial layer and an electrode plate 22 which are arranged in sequence;
the first epitaxial layer comprises a buffer layer 2, an AlN/AlGaN superlattice 3 and n which are sequentially overlapped+The AlGaN type layer 4, the buffer layer 2 and the first substrate 1 are arranged in an overlapping mode;
the n-type electrode 11 is electrically connected to the first substrate 1, and the p-type electrode 15 is electrically connected to the electrode plate 22;
the buffer layer 2 is a hetero-structured BN layer or AlN layer.
In the embodiment of the invention, the buffer layer 2 is superposed on the surface of the first substrate 1, the buffer layer 2 is a BN layer or an AlN layer with a heterostructure, the BN material and the AlN material have high melting points and good thermal stability, the stress between deep ultraviolet LED epitaxial layer structures can be effectively relieved, the material quality and the transverse crystal growth rate in the deep ultraviolet LED epitaxial layer structures are improved to the greatest extent, and the dislocation density is reduced; in addition, the obstacle that the first substrate 1 and the buffer layer 2 in the LED epitaxial structure are difficult to strip in the later deep ultraviolet LED packaging process is avoided, and the damage and the like possibly occurring in the stripping process are even weakened; the n-type electrode 11 and the p-type electrode 15 are arranged on the same side of the epitaxial chip body, and the p-type electrode 15 is LED out, so that the forward mounting process of the deep ultraviolet LED epitaxial chip is facilitated, the operation difficulty is greatly reduced, the packaging process is facilitated, and the light emitting efficiency and the brightness are effectively improved.
In the embodiment of the present invention, the thickness of the buffer layer 2 is 10 nm.
In the embodiment of the invention, AlN/AlGaN superlattices 3 and n are extended on the surface of the buffer layer 2+The thickness of the type AlGaN layer 4, AlN/AlGaN superlattice 3 is 0.8-1.4 μm, n+The thickness of the type AlGaN layer 4 is 2 μm. The AlN/AlGaN superlattice 3 is a multi-period structure spaced apart from each other, and the period is preferably 20. Each period of the AlGaN/AlGaN superlattice 3 includes an AlGaN layer 20nm to 35nm thick and an AlGaN layer 20nm to 35nm thick.
In the embodiment of the present invention, the surface of the electrode plate 22 not facing the epitaxial chip body is a roughened surface, which can fix the epitaxial chip body and is beneficial to heat dissipation of the epitaxial chip body. The electrode plate 22 may be an electrode plate on a Printed Circuit Board (PCB).
In the embodiment of the invention, the epitaxial chip body further comprises a second epitaxial layer;
the second epitaxial layer comprises n sequentially stacked-The GaN-based light-emitting diode comprises a type AlGaN layer 7, a multi-quantum well active region 6, a p-type AlGaN electron barrier layer 8 and a p-type GaN layer 9;
the second epitaxial layer is disposed between the first epitaxial layer and the electrode plate 22;
n-type AlGaN layer 7 and n+The type AlGaN layer 4 is provided in a stacked manner.
In the embodiment of the invention, n+Type AlGaN layer 4 and n-The type AlGaN layer 7 is a heavily doped n-type AlGaN layer and a lightly doped n-type AlGaN layer respectively, and the heavily doped n-type AlGaN layer and the lightly doped n-type AlGaN layer can be combined into a single n-type AlGaN layer or can be formed by mixing the two n-type AlGaN layers with different doping concentrations.
In the present invention, n+Type AlGaN layer 4 and n-The total thickness of the type AlGaN layer 7 is preferably 2 μm. n is-Type AlGaN layer7 and n+The surface of the AlGaN layer 4 is a roughened surface, so that n in the vertical direction in the LED epitaxial layer structure can be enhanced-Type AlGaN layer 7 and n+The light reflection efficiency of the interface of the type AlGaN layer 4 is improved, so that the light emitting efficiency of the deep ultraviolet LED epitaxial chip is increased, and the light output intensity of the LED is improved.
In the embodiment of the invention, the second epitaxial layer is provided with the nano-pillars 5;
the nano-pillar 5 runs through n-The GaN-based light-emitting diode comprises a type AlGaN layer 7, a multi-quantum well active region 6, a p-type AlGaN electron barrier layer 8 and a p-type GaN layer 9;
the nano-pillars 5 are nano-scale gaps, and the width of the nano-scale gaps is n-The type AlGaN layer 7 to the p-type GaN layer 8 become larger in order.
In the embodiment of the invention, the number of the nano-pillars 5 is more than two, so that a micro nano-pillar array structure is formed. n is-The thickness of the type AlGaN layer 7 is 100nm, the thickness of the multi-quantum well active region 6 is 62.5nm, the thickness of the p-type AlGaN electron blocking layer 8 is 60nm, and the thickness of the p-type GaN layer 9 is 100 nm. Note that an electron blocking layer may be further provided between the p-type AlGaN electron blocking layer 8 and the p-type GaN layer 9. The embodiment of the invention is provided with the inclined nano-scale gap, so that the active regions in the micro nano-pillar array structure are communicated with each other by air, and the light emitting efficiency and the heat dissipation effect of the normally-installed deep ultraviolet LED chip packaging structure are improved through the total reflection and the light scattering effect between the nano-pillar and the external air.
In the embodiment of the invention, the p-type AlGaN layer 9 is made of AlGaN with high aluminum composition, and because the lattice constant of the p-type AlGaN electron blocking layer 8 is larger than that of the p-type GaN layer 9, but the forbidden bandwidth is smaller than that of the p-type GaN layer 9, the energy of holes in the region of the p-type AlGaN electron blocking layer 8 is effectively adjusted, and the internal quantum efficiency of the second epitaxial layer structure is improved. Among them, the p-type GaN layer 9 also functions as a p-type region material transfer layer.
In the embodiment of the present invention, the epitaxial chip body further includes a second substrate 13;
the second substrate 13 is disposed between the second epitaxial layer and the electrode plate 22 through the bonding layer 12.
In the embodiment of the invention, a first epitaxial layer grows on the surface of a first substrate 1, the first epitaxial layer comprises a BN layer or an AlN layer of a heterostructure and is extended with a second epitaxial layer, and the second epitaxial layer is provided with a nano-pillar 5; the surface of the second substrate 13 is provided with a third epitaxial layer, the first substrate 1, the first epitaxial layer and the second epitaxial layer which are inverted are buckled on the second substrate 13 and the third epitaxial layer through the bonding layer 12, and then the epitaxial layer structure of the first substrate 1 and the epitaxial layer structure of the second substrate 13 are bonded to form electrical connection.
In the embodiment of the present invention, a third epitaxial layer is stacked on the surface of the second substrate 13 facing the electrode plate 22;
the third epitaxial layer includes a thin film conductive layer 14.
In the embodiment of the invention, the material of the thin film conducting layer 14 is graphene and other materials with good conductivity and excellent heat dissipation effect, so that the heat dissipation of the deep ultraviolet LED epitaxial chip normal mounting structure is more effective. The outer p-type electrode 15 is provided indirectly on the surface of the thin-film conductive layer 14, and the p-type electrode 15 is formed by drawing out the inner p-type electrode 15 through the second metal plug 24, the metal reflective layer 10, the third metal plug 25, and the contact layer 19, which are provided in this order, and further forming the outer p-type electrode 15. A p-type ohmic contact layer may be further provided on the surface of the second substrate 13 facing the thin-film conductive layer 14, and the p-type ohmic contact layer may be formed by drawing the inner p-type electrode 15 through the second metal plug 24, the metal reflective layer 10, the third metal plug 25, and the contact layer 19, which are provided in this order, and further forming the outer p-type electrode 15. It should be noted that the thin film conductive layer 14 may also serve as an ohmic contact layer structure.
In the embodiment of the invention, a metal reflecting layer 10 is stacked between the bonding layer 12 and the second epitaxial layer, and the thickness of the metal reflecting layer 10 is 50 nm. It should be noted that a suspended conductive layer with a thickness of 50nm may be further disposed between the p-type GaN layer 9 and the metal reflective layer 10. The suspended conductive layer is preferably made of indium tin oxide with good conductivity, and the thickness is preferably 50 nm. The surface of the metal reflecting layer 10 is a patterned surface or a roughened surface, and the metal reflecting layer 10 is made of metal aluminum or titanium/aluminum alloy, so that the light reflecting effect is enhanced, and the light output of the normal mounting structure of the deep ultraviolet LED epitaxial chip is improved.
In the embodiment of the invention, the first substrate 1, the buffer layer 2 and the AlN/AlGaN superlattice 3 are provided with grooves;
the recess penetrates the first substrate 1, the buffer layer 2 and the AlN/AlGaN superlattice 3.
In the embodiment of the invention, an insulating layer 18 and a first metal bolt 17 are arranged in the groove;
the insulating layer 18 surrounds the first metal plug 17.
In the embodiment of the invention, the number of the grooves is more than two, so that the current of the deep ultraviolet LED epitaxial chip normal installation structure is expanded more quickly, the insulating layer 18 and the first metal bolt 17 form electrical connection with an external contact electrode, a heat transfer path between a heating source in the deep ultraviolet LED epitaxial chip normal installation structure and the outside is obviously shortened, the heat dissipation efficiency is higher, and the reliability of the deep ultraviolet LED epitaxial chip normal installation structure is improved.
In the embodiment of the present invention, the first substrate 1 is a sapphire substrate;
the second substrate 13 is a silicon substrate.
In the embodiment of the present invention, a passivation layer 16 is disposed on a side surface of the epitaxial chip body.
The deep ultraviolet LED epitaxial chip normal mounting structure provided by the embodiment of the invention has the advantages of high light extraction efficiency, good heat dissipation, high efficiency, reliability, appropriate size, convenience in packaging, good crystal quality and the like.
In an embodiment of the present invention, the second epitaxial layer of the tilted micro-nano-pillar arrays with air gaps ensures that the adjacent tilted micro-nano-pillar arrays are penetrated by air. When a suspended conductive layer is arranged between the p-type GaN layer 9 and the metal reflective layer 10, the suspended conductive layer is suspended on the surface of the micro nano-pillar array in the vertical direction. On one hand, the light-emitting efficiency of the LED is enhanced by utilizing the total reflection and light scattering effects between the active region in the inclined nano-pillar array and the external air because the active region in the inclined micro-pillar is the light-emitting region of the deep ultraviolet LED epitaxial chip normal mounting structure; on the other hand, because the multi-quantum well active region 6 is the main heating source in the deep ultraviolet LED epitaxial chip forward mounting structure, the heat diffusion path between the heating source and the outside air can be shortened by arranging the second epitaxial layer which contains the inclined micro nano-column with the air gap, the heat diffusion of the deep ultraviolet LED epitaxial chip forward mounting structure is accelerated, and the failure of the deep ultraviolet LED epitaxial chip forward mounting structure due to overheating is avoided. The structure composed of the metal reflecting layer 10 or the metal reflecting layer 10 and the suspended conducting layer is positioned in the electrode area of the epitaxial chip body with the inclined and miniature nano-pillars, so that the external electrode structure is better connected with the internal epitaxial layer structure, and the contact layer 19 is used as an intermediate medium to play a role of a bridge.
In the embodiment of the present invention, the p-type electrode 15 and the n-type electrode 11 are located on the same side. The p-type electrode 15 is indirectly and effectively led out through the second metal plug 17, the metal reflective layer 10, the third metal plug 25 and the contact layer 19 which are arranged in sequence. External electrodes corresponding to the internal contact electrodes (second metal plugs 24) are provided on the contact layer 19, and the other end of the single (or multiple) external electrodes is connected to a metal wiring layer in the external substrate heat sink structure, or the external electrodes are directly connected to metal wires (e.g., gold wires 23). The p-type electrode 15 and the n-type electrode 11 are coarsened electrodes, the electrode contact material is Au/Sn alloy with good heat conduction and electric conductivity, heat inside the forward mounting structure of the deep ultraviolet LED epitaxial chip can be effectively transferred to the outside in time, the effective area of the contact electrode is increased, the contact resistance is reduced, and current distribution is more uniform and current expansion is more effective.
In the embodiment of the invention, the passivation layer 16 is arranged on the table top and the side surface of the epitaxial chip body, so that the corrosion of the external environment to the epitaxial chip body can be prevented, the influence of leakage current at the table top and the step side wall on the epitaxial chip body is reduced, the current expansion problem of an active region in the epitaxial chip body is improved, and the current accumulation effect is reduced; meanwhile, by combining with the structural design of a device in a forward mounting mode, the light output power of the forward mounting structure of the deep ultraviolet LED epitaxial chip is also improved; moreover, the surface of the internal contact electrode is also passivated to form an annular columnar protection layer structure wrapping the internal contact electrode, namely the isolation layer 21 wrapping the second metal plug 24 and the protection layer 20 isolating the third metal plug 25, so that a current loop is prevented from being directly formed between the side wall surfaces of the internal contact electrode layer structure, the second metal plug 24 and the third metal plug 25 and the internal contact layer of the epitaxial chip body to cause short circuit. Wherein the thicknesses of the spacer layer 21 and the protective layer 20 are both optimally set to 10 nm.
The above is a detailed description of another embodiment of the deep ultraviolet LED epitaxial chip normal mounting structure provided in the embodiment of the present invention, and a detailed description of a preparation embodiment of the deep ultraviolet LED epitaxial chip normal mounting structure provided in the embodiment of the present invention is provided below.
In the embodiment of the invention, the deep ultraviolet LED epitaxial chip normal mounting structure comprises: an n-type electrode 11, a p-type electrode 15 and an epitaxial chip body;
the n-type electrode 11 and the p-type electrode 15 are arranged on the same side of the epitaxial chip body;
the epitaxial chip body comprises a first substrate 1, a first epitaxial layer and an electrode plate 22 which are arranged in sequence;
the first epitaxial layer comprises a buffer layer 2, an AlN/AlGaN superlattice 3 and an n + type AlGaN layer 4 which are sequentially overlapped, and the buffer layer 2 is overlapped with the first substrate 1;
the n-type electrode 11 is electrically connected to the first substrate 1, and the p-type electrode 15 is electrically connected to the electrode plate 22;
the buffer layer 2 is a hetero-structured BN layer or AlN layer.
In the embodiment of the present invention, under conventional experimental conditions, a BN layer or an AlN layer of a heterostructure is prepared on the first substrate 1 using an electron cyclotron resonance plasma sputtering apparatus. Then, by using a Metal-Organic Chemical Vapor Deposition (MOCVD) device or a Vapor Phase Epitaxy (VPE) device, 0.8 to 1.4 μm thick AlGaN/AlGaN superlattice 3 and 2 μm thick n are sequentially and continuously epitaxial on the surface of the buffer layer 2+A type AlGaN layer 4.
In the embodiment of the invention, the epitaxial chip body further comprises a second epitaxial layer;
the second epitaxial layer comprises n sequentially stacked-The GaN-based light-emitting diode comprises a type AlGaN layer 7, a multi-quantum well active region 6, a p-type AlGaN electron barrier layer 8 and a p-type GaN layer 9;
the second epitaxial layer is disposed between the first epitaxial layer and the electrode plate 22;
n-type AlGaN layer 7 and n+The type AlGaN layer 4 is provided in a stacked manner.
In the examples of the present invention, n is prepared under high temperature conditions-Type AlGaN layer 7 and n+A type AlGaN layer 4, and n, considering the reflection and absorption of light by the LED chip material, while combining with the surface thinning treatment technology of the LED epitaxial layer structure-Type AlGaN layer 7 and n+The surface of the AlGaN layer 4 is coarsened, so that n in the vertical direction in the LED epitaxial layer structure is enhanced-Type AlGaN layer 7 and n+The light reflection efficiency of the interface of the type AlGaN layer 4 is improved, so that the light emitting efficiency of the deep ultraviolet LED epitaxial chip is increased, and the light output intensity of the LED is improved.
In the embodiment of the invention, the second epitaxial layer is provided with the nano-pillars 5;
the nano-pillar 5 runs through n-The GaN-based light-emitting diode comprises a type AlGaN layer 7, a multi-quantum well active region 6, a p-type AlGaN electron barrier layer 8 and a p-type GaN layer 9;
the nano-pillars 5 are nano-scale gaps, and the width of the nano-scale gaps is n-The type AlGaN layer 7 to the p-type GaN layer 8 become larger in order.
In the embodiment of the present invention, the epitaxial chip body further includes a second substrate 13;
the second substrate 13 is disposed between the second epitaxial layer and the electrode plate 22 through the bonding layer 12.
In the embodiment of the present invention, a third epitaxial layer is stacked on the surface of the second substrate 13 facing the electrode plate 22;
the third epitaxial layer includes a thin film conductive layer 14.
In the embodiment of the present invention, a metal reflective layer 10 is stacked between the bonding layer 12 and the second epitaxial layer.
In the embodiment of the invention, the preparation process of the epitaxial chip body mainly comprises the processes of photoetching, epitaxial layer etching, electrode preparation, passivation treatment, thinning and splitting, scribing and the like.
The invention adopts the traditional process, after the temperature in MOCVD equipment or MOVPE equipment is rapidly raised to 1050-1100 ℃ and a stable state is maintained, an n-type AlGaN layer is extended on the surface of the AlGaN/AlGaN superlattice 3, and the thickness of the n-type AlGaN layer is ensured to be kept at 2 mu m.
In the embodiment of the invention, n+And continuing secondary epitaxy on the surface of the type AlGaN layer 4 and the side deviating from the AlGaN/AlGaN superlattice 3, and finally forming a micro nano-pillar array containing an air gap by combining the technologies of photoetching, dry etching, wet etching and the like.
In the embodiment of the invention, the preparation process of the second epitaxial layer with the micro nano-pillar array structure is as follows: at n+Uniformly depositing a masking layer with specific thickness on the surface of the type AlGaN layer 4, wherein the masking layer is made of SiO2A material; by using a PECVD (Plasma Enhanced Chemical Vapor Deposition) apparatus, in SiO2Depositing a uniform, monolayer of spherical particles of polystyrene on the masking layer to form SiO2Point contact is formed between the masking layer and the polystyrene balls; the structure is heated and pretreated, and an ICP (inductively coupled Plasma) etching technology is combined to gradually melt and collapse the polystyrene balls and reduce the size of the polystyrene balls, so that SiO is generated2The masking layer and the polystyrene beads form surface contact, the bonding effect is enhanced, and a part of the masking layer is exposed between the adjacent polystyrene beads; performing metal evaporation treatment to make polystyrene small balls and exposed SiO2A metal film layer is deposited on the surface of the masking layer to form a metal mask structure; then, toluene ultrasonic treatment is adopted, only the metal film layer evaporated on the polystyrene spheres is removed, and a metal mask structure with a certain thickness still exists between the adjacent polystyrene spheres; heating again to completely remove the polystyrene spheres at the top and completely expose the metal mask structures arranged at intervals; etching process is adopted to etch SiO2The masking layer being vertically engravedEtching treatment to make SiO not covered by metal mask2The masking layer is completely etched away and the SiO protected by the metal mask2The masking layer is still present, forming a SiO layer with a metal mask on top2A nanopillar array structure; removing SiO by acid liquor corrosion treatment2A metal mask covered by the top of the nano-pillar array structure; adopting MOCVD equipment to continuously carry out secondary epitaxy on adjacent SiO2N grows between the nano-pillar arrays in sequence-A type AlGaN layer 7, a multi-quantum well active region 6, a p-type AlGaN electron blocking layer 8 and a p-type GaN layer 9, and the total thickness of the layers is equal to that of SiO2The thickness of the masking layer is substantially uniform; sequentially depositing a metal reflecting layer 10 on the top of the second epitaxial layer structure with the micro nano-pillar array; ultrasonically processing the second LED epitaxial layer structure by using a Buffered Oxide Etch (BOE) solution to Etch off SiO2A masking layer.
In the embodiment of the invention, in the preparation process of the second epitaxial layer structure with the inclined and miniature nano-columns, the temperature in the MOCVD reaction equipment is slowly reduced to 750 ℃, and then n is measured-5 periods of AlGaN/AlGaN multiple quantum well active regions 6 are extended on the surface of the type AlGaN layer 7. Wherein the quantum well layer in each period comprises an AlGaN well layer with the thickness of 10nm and an AlGaN barrier layer with the thickness of 2.5 nm. Then, the p-type AlGaN electron blocking layer 8 continues to be epitaxially grown on the surface of the multiple quantum well active region 6. Next, the growth temperature in the MOCVD reaction equipment was slowly lowered, and a p-type GaN layer 9 was epitaxially grown on the surface of the p-type AlGaN electron blocking layer 8. Specifically, the p-type AlGaN layer 9 is made of an AlGaN material with a high aluminum composition, and since the lattice constant of the p-type AlGaN electron blocking layer 8 is larger than that of the p-type GaN layer 9, but the forbidden bandwidth is smaller than that of the p-type GaN layer 9, the energy of holes in the p-type AlGaN electron blocking layer 8 region is effectively adjusted, and the internal quantum efficiency of the second epitaxial layer structure is improved. Among them, the p-type GaN layer 9 also functions as a p-type region material transfer layer.
In the embodiment of the present invention, the metal reflective layer 10 is continuously and uniformly covered and deposited on the surface of the p-type GaN layer 9. It should be noted that a suspended conductive layer may be further disposed between the p-type GaN layer 9 and the metal reflective layer 10. The conducting layer is preferably made of indium tin oxide with good conductivity, and the thickness is preferably 50 nm. In the process of growing the conducting layer, multiple annealing process treatment under different temperature gradients is adopted, so that the bonding strength between the epitaxial material and the heterostructure is enhanced, and the internal contact resistance is reduced. The thickness of the metal reflecting layer 10 is 50nm, special process treatment such as surface patterning or roughening is carried out, the metal reflecting layer 10 is made of metal aluminum or titanium/aluminum alloy, the light reflecting effect is enhanced, and the light output of the normal mounting structure of the deep ultraviolet LED epitaxial chip is improved. Meanwhile, the structure formed by the metal reflecting layer 10 or the metal reflecting layer 10 and the conducting layer, which is positioned in the electrode area of the epitaxial chip body with the inclined and miniature nano-pillars, better connects the external electrode structure with the internal epitaxial layer structure, and the contact layer 19 serves as an intermediate medium to play a role of a bridge.
According to the embodiment of the invention, the second epitaxial layer is subjected to ultrasonic treatment by adopting a BOE solution to etch off SiO2The masking layer, in turn, forms the second epitaxial layer of the tilted, micro-nano-pillar array with air gaps, which also ensures that the adjacent tilted, micro-nano-pillar arrays are penetrated by air. When the conductive layer is arranged between the p-type GaN layer 9 and the metal reflecting layer 10, the conductive layer is suspended on the surface of the micro nano-pillar array in the vertical direction. On one hand, the light-emitting efficiency of the LED is enhanced by utilizing the total reflection and light scattering effects between the active region in the inclined nano-pillar array and the external air because the active region in the inclined micro-pillar is the light-emitting region of the deep ultraviolet LED epitaxial chip normal mounting structure; on the other hand, because the multi-quantum well active region 6 is the main heating source in the deep ultraviolet LED epitaxial chip forward mounting structure, the heat diffusion path between the heating source and the outside air can be shortened by arranging the second epitaxial layer which contains the inclined micro nano-column with the air gap, the heat diffusion of the deep ultraviolet LED epitaxial chip forward mounting structure is accelerated, and the failure of the deep ultraviolet LED epitaxial chip forward mounting structure due to overheating is avoided.
In the embodiment of the invention, the first substrate 1, the buffer layer 2 and the AlN/AlGaN superlattice 3 are provided with grooves;
the recess penetrates the first substrate 1, the buffer layer 2 and the AlN/AlGaN superlattice 3.
In the embodiment of the invention, an insulating layer 18 and a first metal bolt 17 are arranged in the groove;
the insulating layer 18 surrounds the first metal plug 17.
In the embodiment of the invention, the first substrate 1, the buffer layer 2 and the AlN/AlGaN superlattice 3 are etched or hollowed out from the first substrate 1 by adopting the processes of photoetching, dry etching, wet etching and the like to form a groove structure, so that the internal n-type electrode contact structure is prepared. Wherein, a plurality of grooves are arranged at equal intervals, and the etching depth of the grooves is from bottom to top from the first substrate 1 at the top until n is exposed+A type AlGaN layer. By strictly controlling the etching rate during the etching, it is also ensured that only the first substrate 1, the buffer layer 2 and the AlN/AlGaN superlattice 3 are completely etched, preferably also for n+The AlGaN layer is not etched or is only partially etched, so that the damage of a deep etching process to a light emitting area in the epitaxial wafer is reduced, and the light output intensity of the forward mounting structure of the deep ultraviolet LED epitaxial chip is improved.
In the process of preparing the internal n-type electrode contact structure, the embodiment of the invention also comprises the steps of firstly carrying out annular passivation and insulation treatment on the inner wall of the groove structure, and filling an insulating medium material into the groove structure to form an insulating layer 18; then, a metal or alloy material is filled therein to form a corresponding internal contact electrode, thereby forming a first metal plug 17.
In the embodiment of the present invention, the first substrate 1 is a sapphire substrate;
the second substrate 13 is a silicon substrate.
In the embodiment of the present invention, a passivation layer 16 is disposed on a side surface of the epitaxial chip body.
In the embodiment of the present invention, the first substrate 1 is a sapphire substrate, and the surface of the first substrate 1 is cleaned and baked at a high temperature to remove contaminants.
The second substrate 13 is a silicon substrate with good conductivity, and the second substrate 13 is set as a p-type silicon substrate or an intrinsic silicon substrate by adopting a standard monocrystalline silicon preparation process and combining processes of impurity diffusion, doping and the like and an ion implantation method thereof, and a thin film conductive layer 14 is grown on one surface of the second substrate 13. Specifically, the second substrate 13 is pretreated by an earlier cleaning process or the like to remove contaminants on the surface of the second substrate 13. Next, a single graphene thin film layer is laid on one surface of the second substrate 13 by performing Deposition processing of the thin film conductive layer 14 using a Chemical Vapor Deposition (CVD) apparatus, a coater, or a magnetron sputtering apparatus.
In the embodiment of the present invention, the prepared second substrate 13 and the prepared third epitaxial layer are turned upside down, and then the first substrate 1, the first epitaxial layer and the second epitaxial layer which are turned upside down are buckled on the second substrate 13 and the third epitaxial layer through the bonding layer 12 arranged in the middle, so that the electrical connection process of the first substrate 1, the first epitaxial layer, the second substrate 13 and the third epitaxial layer is completed. Then, the connecting structure is continuously turned over on the external PCB, and the PCB is also provided with an electrode plate 22 with optimized graph or coarsening treatment; meanwhile, by carrying out evaporation treatment on an internal electrode and an external electrode on the bonded epitaxial chip body, the electrode plate 22 is matched with the second metal bolt 24, and further, by the structures of the third metal bolt 25, the metal contact layer 19 and the like, after the internal electrode is LED out, the external electrode is indirectly arranged, and finally, a plurality of external p-type electrodes 15 and n-type electrodes 23 are respectively arranged at two ends, so that a deep ultraviolet LED epitaxial chip normal mounting structure is formed.
In the embodiment of the present invention, for the preparation of the P-type electrode 15, in combination with the LED forward mounting process, the P-type electrode 15 at the bottom is indirectly connected to the top, that is, the P-type electrode 15 and the n-type electrode 11 are located on the same side. Specifically, in the process of transferring the p-type electrode 15 to the top, the p-type electrode 15 is indirectly and efficiently led out through the second metal plug 17, the metal reflective layer 10, the third metal plug 25, and the contact layer 19, which are sequentially disposed. Then, an external electrode corresponding to the internal contact electrode (second metal plug 24) is disposed on the contact layer 19, and the other end of the disposed single (or multiple) external electrode is connected to a metal wiring layer in the external substrate heat sink structure, or the above external electrode is directly connected to a metal wire (e.g., gold wire 23). Wherein, when carrying out the deposit of external electrode, when the coating by vaporization, through adopting surface film to handle or the figure optimization technique carries out alligatoring with outside p type electrode and n type electrode, and optimize its ohmic contact's mode and bonding strength, combine transparent electrode preparation technique and the face contact material type at the optimization electrode position again, and then choose the Au/Sn alloy that the heat conductivity is good for use as electrode contact material, in time effectively with the inside heat transfer of deep ultraviolet LED epitaxial chip normal dress structure to the outside, and then increased contact electrode's effective area, contact resistance has been reduced, make current distribution more even, the current extension is more effective.
In the embodiment of the invention, the table top, the side surface and the external electrode surface of the epitaxial chip body are passivated, and the structures such as the passivation layer 16, the isolation layer 21, the protection layer 20 and the like are respectively arranged, so that the corrosion of the external environment on the epitaxial chip body can be prevented, the influence of leakage current at the table top and the step side wall on the epitaxial chip body is reduced, the current expansion problem of an active region in the epitaxial chip body is improved, and the current accumulation effect is reduced; meanwhile, by combining with the structural design of a device in a forward mounting mode, the light output power of the forward mounting structure of the deep ultraviolet LED epitaxial chip is also improved; moreover, the surface of the internal contact electrode is also passivated to form an annular columnar protection layer structure wrapping the internal contact electrode, namely the isolation layer 21 wrapping the second metal plug 24 and the protection layer 20 isolating the third metal plug 25, so that a current loop is prevented from being directly formed between the side wall surfaces of the internal contact electrode layer structure, the second metal plug 24 and the third metal plug 25 and the internal contact layer of the epitaxial chip body to cause short circuit. Wherein the thicknesses of the spacer layer 21 and the protective layer 20 are both optimally set to 10 nm.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. The utility model provides a dark ultraviolet LED epitaxial chip is just adorned structure which characterized in that includes: the epitaxial chip comprises an n-type electrode, a p-type electrode and an epitaxial chip body;
the n-type electrode and the p-type electrode are arranged on the same side of the epitaxial chip body;
the epitaxial chip body comprises a first substrate, a first epitaxial layer and an electrode plate which are sequentially arranged;
the first epitaxial layer comprises a buffer layer, an AlN/AlGaN superlattice and n which are sequentially stacked+The buffer layer is overlapped with the first substrate;
the n-type electrode is electrically connected with the first substrate, and the p-type electrode is electrically connected with the electrode plate;
the buffer layer is a BN layer or an AlN layer of a heterostructure;
the epitaxial chip body further comprises a second epitaxial layer;
the second epitaxial layer comprises n sequentially stacked-The semiconductor device comprises a type AlGaN layer, a multi-quantum well active region, a p-type AlGaN electron barrier layer and a p-type GaN layer;
the second epitaxial layer is arranged between the first epitaxial layer and the electrode plate;
n is-Type AlGaN layer and the n+The type AlGaN layers are arranged in an overlapping mode;
the second epitaxial layer is provided with nano columns;
the nano-pillar penetrates through the n-The semiconductor device comprises a type AlGaN layer, a multi-quantum well active region, a p-type AlGaN electron blocking layer and a p-type GaN layer;
the nano-pillars are nano-scale gaps, and the width of the nano-scale gaps is determined by the n-The size from the type AlGaN layer to the p-type GaN layer is increased in sequence;
grooves are formed in the first substrate, the buffer layer and the AlN/AlGaN superlattice, and the number of the grooves is more than two;
the groove penetrates through the first substrate, the buffer layer and the AlN/AlGaN superlattice;
an insulating layer and a first metal bolt are arranged in the groove;
the insulating layer surrounds the first metal bolt;
the total thickness of the n + type AlGaN layer and the n-type AlGaN layer is 2 mu m;
the surfaces of the n-type AlGaN layer and the n + type AlGaN layer are roughened surfaces.
2. The ultraviolet LED epitaxial chip forward mounting structure of claim 1, wherein the epitaxial chip body further comprises a second substrate;
the second substrate is arranged between the second epitaxial layer and the electrode plate through a bonding layer.
3. The ultraviolet LED epitaxial chip forward mounting structure of claim 2, wherein a third epitaxial layer is superposed on the surface of the second substrate facing the electrode plate; the third epitaxial layer includes a thin film conductive layer.
4. The ultraviolet LED epitaxial chip forward mounting structure of claim 2, wherein a metal reflecting layer is stacked between the bonding layer and the second epitaxial layer.
5. The ultraviolet LED epitaxial chip forward mounting structure of claim 2, wherein the first substrate is a sapphire substrate;
the second substrate is a silicon substrate.
6. The ultraviolet LED epitaxial chip forward mounting structure of claim 1, wherein a passivation layer is arranged on the side face of the epitaxial chip body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614645.9A CN109545928B (en) | 2018-12-27 | 2018-12-27 | Deep ultraviolet LED epitaxial chip normal mounting structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614645.9A CN109545928B (en) | 2018-12-27 | 2018-12-27 | Deep ultraviolet LED epitaxial chip normal mounting structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109545928A CN109545928A (en) | 2019-03-29 |
| CN109545928B true CN109545928B (en) | 2020-10-23 |
Family
ID=65857399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811614645.9A Active CN109545928B (en) | 2018-12-27 | 2018-12-27 | Deep ultraviolet LED epitaxial chip normal mounting structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109545928B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244240B (en) * | 2020-02-27 | 2024-08-30 | 广东波达电子科技有限公司 | Deep ultraviolet LED chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108110105A (en) * | 2018-01-31 | 2018-06-01 | 广东工业大学 | A kind of UV LED chip, the production method of UV LED chip and a kind of ultraviolet LED |
| CN108133993A (en) * | 2018-01-30 | 2018-06-08 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN108400133A (en) * | 2018-05-11 | 2018-08-14 | 广东工业大学 | A kind of the deep ultraviolet LED epitaxial structure and preparation method of same side structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI535077B (en) * | 2012-05-24 | 2016-05-21 | 台達電子工業股份有限公司 | Light emitting?apparatus and light emitting module thereof |
-
2018
- 2018-12-27 CN CN201811614645.9A patent/CN109545928B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108133993A (en) * | 2018-01-30 | 2018-06-08 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN108110105A (en) * | 2018-01-31 | 2018-06-01 | 广东工业大学 | A kind of UV LED chip, the production method of UV LED chip and a kind of ultraviolet LED |
| CN108400133A (en) * | 2018-05-11 | 2018-08-14 | 广东工业大学 | A kind of the deep ultraviolet LED epitaxial structure and preparation method of same side structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109545928A (en) | 2019-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205159352U (en) | Light emitting apparatus | |
| US8574939B2 (en) | Semiconductor optoelectronics structure with increased light extraction efficiency and fabrication method thereof | |
| TWI487133B (en) | Roughened high refractive index layer/led for high light extraction | |
| US8405103B2 (en) | Photonic crystal light emitting device and manufacturing method of the same | |
| CN105552180B (en) | A kind of production method of novel high-pressure LED | |
| CN208208784U (en) | A kind of ultraviolet LED vertical chip structure | |
| TW200525782A (en) | Photonic crystal light emitting device | |
| CN101969089B (en) | Method for manufacturing gallium nitride-based light-emitting diode with current barrier layer | |
| CN108305918B (en) | Nitride semiconductor photogenerator and preparation method thereof | |
| WO2017167190A1 (en) | Graphical si substrate-based led epitaxial wafer and preparation method therefor | |
| JP6219506B2 (en) | Insulating layer for planarization and definition of the active region of nanowire devices | |
| CN108133993A (en) | A kind of ultraviolet LED vertical chip structure | |
| CN108110105A (en) | A kind of UV LED chip, the production method of UV LED chip and a kind of ultraviolet LED | |
| CN103985800A (en) | Semiconductor light emitting device | |
| TWI474507B (en) | Manufacturing method of solid state light emitting element | |
| CN102334203B (en) | Method for fabricating light emitting device | |
| KR101072200B1 (en) | Light emitting device and method for fabricating the same | |
| CN102067340B (en) | Semiconductor light-emitting device with passivation in p-type layer | |
| CN109545928B (en) | Deep ultraviolet LED epitaxial chip normal mounting structure | |
| CN107452861B (en) | Ultraviolet LED chip and preparation method thereof | |
| KR20090105462A (en) | Vertical structured group 3 nitride-based light emitting diode and its fabrication methods | |
| CN103840073B (en) | Inverted light-emitting diode (LED) device and its manufacture method | |
| KR20090106294A (en) | vertical structured group 3 nitride-based light emitting diode and its fabrication methods | |
| US20100224900A1 (en) | Semiconductor optoelectronic device and method for making the same | |
| CN207265051U (en) | A kind of UV LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |