TW201442283A - Light emitting diode (LED) device and manufacturing method thereof - Google Patents

Light emitting diode (LED) device and manufacturing method thereof Download PDF

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TW201442283A
TW201442283A TW102113817A TW102113817A TW201442283A TW 201442283 A TW201442283 A TW 201442283A TW 102113817 A TW102113817 A TW 102113817A TW 102113817 A TW102113817 A TW 102113817A TW 201442283 A TW201442283 A TW 201442283A
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emitting diode
light
layer
electrode
light emitting
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TW102113817A
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Chinese (zh)
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TWI517442B (en
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Robert Yeh
Chih-Min Lin
Chieh-Yu Kang
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Everlight Electronics Co Ltd
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Abstract

A LED device including a substrate, a first LED, a second LED, an insulating layer, a circuit layer, a reflecting layer, a first pad and a second pad is provided. The first LED disposed on the substrate includes a first electrode and a first illuminating region. A gap exists between the first and the second LEDs. The second LED disposed on the substrate includes a second electrode and a second illuminating region. The circuit layer electronically connects the first and the second LEDs. The reflecting layer is located between the first illuminating region and the first pad and between the second illuminating region and the second pad. The insulating layer filled in the gap and located between the circuit layer and the reflecting layer contacts the first and the second LEDs. The first and the second pads are disposed on the first and the second electrodes respectively.

Description

發光二極體裝置及其製作方法 Light-emitting diode device and manufacturing method thereof

本發明是有關於一種發光二極體裝置及其製作方法,且特別是有關於一種高電壓發光二極體裝置及其製作方法。 The present invention relates to a light emitting diode device and a method of fabricating the same, and more particularly to a high voltage light emitting diode device and a method of fabricating the same.

發光二極體具有諸如壽命長、體積小、高抗震性、低熱產生及低功率消耗等優點,因此已被廣泛應用於家用及各種設備中的指示器或光源。近年來,由於發光二極體的發光效率不斷提升,使得發光二極體在某些領域已漸漸取代日光燈與白熾燈泡,例如需要高速反應的掃描器燈源、液晶顯示器的背光源或前光源汽車的儀表板照明、交通號誌燈,以及一般的照明裝置等。發光二極體的發光原理是將電能轉換為光,也就是對發光二極體施加電流,透過電子、電洞的結合以光的型態釋放出來,進而達到發光的效果。 The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, due to the increasing luminous efficiency of light-emitting diodes, light-emitting diodes have gradually replaced fluorescent lamps and incandescent light bulbs in certain fields, such as scanner light sources requiring high-speed response, backlights for liquid crystal displays, or front light source vehicles. Dashboard lighting, traffic lights, and general lighting. The principle of the light-emitting diode is to convert electric energy into light, that is, to apply current to the light-emitting diode, and to release the light through the combination of electrons and holes, thereby achieving the effect of light emission.

習知以封裝方式達成高電壓發光二極體光源的技術手段是先生產出單顆發光二極體晶片,然後將多顆發光二極體晶片固晶於封裝基板上,並使用打線方式完成電性連接。詳細而言,高 電壓發光二極體封裝的製造過程一般是將多個發光二極體晶片先安裝至一承載器上,其承載器例如為一印刷電路板承載器、基板或底座(sub-mount)上。接著,在發光二極體晶片之接點與承載器之接點間形成多條導線,以將發光二極體晶片電性連接至承載器。發光二極體晶片主要是透過對導線施加電壓差以使發光二極體晶片的發光主動層發光,同時發光主動層也會產生熱能。 The technical means of achieving a high-voltage light-emitting diode light source by means of packaging is to produce a single light-emitting diode wafer, and then to fix a plurality of light-emitting diode wafers on a package substrate, and to complete the electricity by using a wire bonding method. Sexual connection. In detail, high The manufacturing process of a voltage-emitting diode package generally involves mounting a plurality of light-emitting diode chips on a carrier, such as a printed circuit board carrier, substrate or sub-mount. Then, a plurality of wires are formed between the contacts of the light-emitting diode chip and the contacts of the carrier to electrically connect the light-emitting diode chip to the carrier. The light-emitting diode chip mainly emits light by applying a voltage difference to the wire to cause the light-emitting active layer of the light-emitting diode chip to emit light, and the light-emitting active layer also generates heat energy.

如此,高電壓發光二極體封裝相較於一般只設置一個發光二極體晶片的發光二極體封裝會產生更多的熱能,而其散熱卻是透過導熱效率極差的生長基板(例如為藍寶石基板)來將熱能傳導至外部。因此,若發光二極體晶片的發光主動層發光時所產生的熱量無法有效排出,特別在高電流驅使下時,發光二極體晶片往往容易因過熱而損壞。 In this way, the high-voltage light-emitting diode package generates more heat energy than the light-emitting diode package in which only one light-emitting diode chip is generally disposed, and the heat dissipation is through the growth substrate with poor thermal conductivity (for example, Sapphire substrate) to conduct thermal energy to the outside. Therefore, if the heat generated by the light-emitting active layer of the light-emitting diode chip is not efficiently discharged, especially when driven by a high current, the light-emitting diode chip is often easily damaged by overheating.

本發明提供一種發光二極體裝置,其可提升裝置的散熱效率,進而提升各發光二極體的功率。 The invention provides a light emitting diode device, which can improve the heat dissipation efficiency of the device, thereby improving the power of each light emitting diode.

本發明的發光二極體裝置,其包括基板、第一發光二極體、第二發光二極體、絕緣層、導線層、反射層、第一接墊以及第二接墊。第一發光二極體設置於基板之表面上且包括第一電極以及第一發光區域。第二發光二極體設置於表面上並與第一發光二極體之間具有空隙。第二發光二極體包括第二電極以及第二發光區域。導線層設置於間隙內且電性連接第一及第二發光二極 體。反射層連續地設置於第一發光二極體及第二發光二極體上,且位於第一發光區域與第一接墊間及第二發光區域與第二接墊間。第一接墊以及第二接墊分別設置於第一電極以及第二電極上並與第一電極以及第二電極電性連接。 The light emitting diode device of the present invention comprises a substrate, a first light emitting diode, a second light emitting diode, an insulating layer, a wire layer, a reflective layer, a first pad and a second pad. The first light emitting diode is disposed on a surface of the substrate and includes a first electrode and a first light emitting region. The second light emitting diode is disposed on the surface and has a gap between the first light emitting diode and the first light emitting diode. The second light emitting diode includes a second electrode and a second light emitting region. The wire layer is disposed in the gap and electrically connected to the first and second light emitting diodes body. The reflective layer is continuously disposed on the first light emitting diode and the second light emitting diode, and is located between the first light emitting region and the first pad and between the second light emitting region and the second pad. The first pad and the second pad are respectively disposed on the first electrode and the second electrode and electrically connected to the first electrode and the second electrode.

本發明的發光二極體裝置的製作方法包括下列步驟。首先,提供一發光二極體晶片結構,其包括一基板、一第一發光二極體、一第二發光二極體以及一導線層,其中第一發光二極體設置於基板之一表面上,並包括一第一電極以及一第一發光區域。第二發光二極體設置於表面上並與第一發光二極體之間具有一空隙。第二發光二極體包括一第二電極以及一第二發光區域。導線層連接第一發光二極體以及第二發光二極體。接著,形成一第一絕緣層,覆蓋發光二極體晶片結構。接著,形成一反射層,覆蓋第一絕緣層,並位於第一發光區域以及第二發光區域上。接著,形成一第二絕緣層,覆蓋反射層。接著,分別設置一第一接墊以及一第二接墊於第一電極以及第二電極上。 The manufacturing method of the light-emitting diode device of the present invention comprises the following steps. First, a light emitting diode structure is provided, comprising a substrate, a first light emitting diode, a second light emitting diode, and a wire layer, wherein the first light emitting diode is disposed on a surface of the substrate And including a first electrode and a first light emitting region. The second light emitting diode is disposed on the surface and has a gap between the first light emitting diode and the first light emitting diode. The second light emitting diode includes a second electrode and a second light emitting region. The wire layer connects the first light emitting diode and the second light emitting diode. Next, a first insulating layer is formed to cover the light emitting diode wafer structure. Next, a reflective layer is formed to cover the first insulating layer and is located on the first light emitting region and the second light emitting region. Next, a second insulating layer is formed to cover the reflective layer. Then, a first pad and a second pad are respectively disposed on the first electrode and the second electrode.

在本發明的一實施例中,上述的第一發光二極體包括一第一半導體層、一第一發光層和一第二半導體層自表面依序堆疊。第一發光層定義出第一發光區域。第一電極設置於第二半導體層上。第二發光二極體包括一第三半導體層、一第二發光層和一第四半導體層自表面依序堆疊。第二發光層定義出第二發光區域。第二電極設置於第三半導體層上。 In an embodiment of the invention, the first light emitting diode includes a first semiconductor layer, a first light emitting layer and a second semiconductor layer stacked in sequence from the surface. The first luminescent layer defines a first illuminating region. The first electrode is disposed on the second semiconductor layer. The second light emitting diode includes a third semiconductor layer, a second light emitting layer and a fourth semiconductor layer stacked in sequence from the surface. The second luminescent layer defines a second illuminating region. The second electrode is disposed on the third semiconductor layer.

在本發明的一實施例中,上述的導線層連接第一半導體 層與第四半導體層。 In an embodiment of the invention, the wire layer is connected to the first semiconductor a layer and a fourth semiconductor layer.

在本發明的一實施例中,上述的絕緣層接觸第一半導體層、第二半導體層、第三半導體層以及第四半導體層,並包覆反射層之表面。 In an embodiment of the invention, the insulating layer contacts the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer, and covers the surface of the reflective layer.

在本發明的一實施例中,上述的第一半導體層與第三半導體層為N型半導體層。第二半導體層與第四半導體層為P型半導體層。 In an embodiment of the invention, the first semiconductor layer and the third semiconductor layer are N-type semiconductor layers. The second semiconductor layer and the fourth semiconductor layer are P-type semiconductor layers.

在本發明的一實施例中,上述的第一半導體層與第三半導體層為N型半導體層。第二半導體層與第四半導體層為P型半導體層。 In an embodiment of the invention, the first semiconductor layer and the third semiconductor layer are N-type semiconductor layers. The second semiconductor layer and the fourth semiconductor layer are P-type semiconductor layers.

在本發明的一實施例中,上述的第一發光層以及第二發光層包括多重量子井(multiple quantum well,MQW)。 In an embodiment of the invention, the first luminescent layer and the second luminescent layer comprise a multiple quantum well (MQW).

在本發明的一實施例中,上述的發光二極體裝置更包括一反射層,設置於空隙內,且絕緣層包覆反射層之表面。 In an embodiment of the invention, the light emitting diode device further includes a reflective layer disposed in the gap, and the insulating layer covers the surface of the reflective layer.

在本發明的一實施例中,上述在形成第二絕緣層的步驟之後,更包括暴露第一電極及第二電極之頂面之步驟,其步驟包括:首先,在形成第一絕緣層之後,移除部份之第一絕緣層,以暴露第一電極以及第二電極之頂面。接著,在形成反射層之後,移除部份之反射層,以暴露第一電極以及第二電極之頂面。接著,在形成第二絕緣層之後,移除部份之第二絕緣層,以暴露第一電極以及第二電極之頂面。 In an embodiment of the invention, after the step of forming the second insulating layer, the method further includes the steps of exposing the top surfaces of the first electrode and the second electrode, the steps comprising: first, after forming the first insulating layer, A portion of the first insulating layer is removed to expose the top surfaces of the first electrode and the second electrode. Then, after the reflective layer is formed, a portion of the reflective layer is removed to expose the top surfaces of the first electrode and the second electrode. Next, after the second insulating layer is formed, a portion of the second insulating layer is removed to expose the top surfaces of the first electrode and the second electrode.

基於上述,本發明的發光二極體裝置於其遠離基板的表 面上設置接墊,並將電極的電性延伸至接墊,使發光二極體裝置能以覆晶接合的方式連接至承載器上。如此,發光二極體裝置所產生的熱能即可藉由導熱效率高的接墊將熱能傳導至承載器,而無須透過導熱效率較差的基板來進行散熱,因而能提高發光二極體裝置的散熱效率。再者,由於發光二極體裝置的散熱效率提高,其發光二極體可承載的驅動電流亦可隨之提高,因而可減少發光二極體裝置中發光二極體的數量,進而降低生產成本。此外,反射層設置於發光二極體裝置之發光層與接墊之間,以反射其發光層所發出的光線,因而提升了發光二極體裝置的出光效率。 Based on the above, the light emitting diode device of the present invention is in a table away from the substrate A pad is disposed on the surface, and the electrical conductivity of the electrode is extended to the pad, so that the LED device can be connected to the carrier by flip chip bonding. In this way, the thermal energy generated by the light-emitting diode device can conduct heat energy to the carrier through the heat-conducting pad, without dissipating heat through the substrate with poor thermal conductivity, thereby improving the heat dissipation of the light-emitting diode device. effectiveness. Furthermore, since the heat dissipation efficiency of the light-emitting diode device is improved, the driving current that the light-emitting diode can carry can also be increased, thereby reducing the number of light-emitting diodes in the light-emitting diode device, thereby reducing the production cost. . In addition, the reflective layer is disposed between the light-emitting layer of the light-emitting diode device and the pad to reflect the light emitted by the light-emitting layer, thereby improving the light-emitting efficiency of the light-emitting diode device.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

100‧‧‧發光二極體裝置 100‧‧‧Lighting diode device

110‧‧‧基板 110‧‧‧Substrate

112‧‧‧表面 112‧‧‧ surface

120‧‧‧第一發光二極體 120‧‧‧First light-emitting diode

122‧‧‧第一半導體層 122‧‧‧First semiconductor layer

124‧‧‧第一發光層 124‧‧‧First luminescent layer

126‧‧‧第二半導體層 126‧‧‧Second semiconductor layer

128‧‧‧第一電極 128‧‧‧First electrode

130‧‧‧第二發光二極體 130‧‧‧Second light-emitting diode

132‧‧‧第三半導體層 132‧‧‧ third semiconductor layer

134‧‧‧第二發光層 134‧‧‧second luminescent layer

136‧‧‧第四半導體層 136‧‧‧fourth semiconductor layer

138‧‧‧第二電極 138‧‧‧second electrode

140‧‧‧絕緣層 140‧‧‧Insulation

140a‧‧‧第一絕緣層 140a‧‧‧first insulation

140b‧‧‧第二絕緣層 140b‧‧‧Second insulation

150‧‧‧導線層 150‧‧‧ wire layer

160‧‧‧第一接墊 160‧‧‧first mat

170‧‧‧第二接墊 170‧‧‧second mat

190‧‧‧反射層 190‧‧‧reflective layer

200‧‧‧承載器 200‧‧‧carrier

G‧‧‧空隙 G‧‧‧ gap

圖1A至圖1H是依照本發明的一實施例的一種發光二極體裝置的製作流程剖面示意圖。 1A-1H are schematic cross-sectional views showing a manufacturing process of a light emitting diode device according to an embodiment of the invention.

圖2是依照本發明的一實施例的一種發光二極體裝置的剖面示意圖。 2 is a cross-sectional view of a light emitting diode device in accordance with an embodiment of the present invention.

圖1A至圖1H是依照本發明的一實施例的一種發光二極體裝置的製作流程剖面示意圖。本實施例的發光二極體裝置的製 作方法包括下列步驟:首先,提供如圖1A所示的一發光二極體晶片結構,其包括一基板110、一第一發光二極體120、一第二發光二極體130以及一導線層150。在本實施例中,基板110可為供半導體生長的生長基板,例如為藍寶石基板(sapphire substrate)。第一發光二極體120設置於基板110之一表面112上,並包括第一電極128以及第一發光層124,其中第一發光層124定義出第一發光區域。詳細而言,第一發光二極體120包括一第一半導體層122、一第一發光層124和一第二半導體層126自表面112依序往遠離表面112的方向堆疊,而第一發光層124定義出上述的第一發光區域。第一發光二極體120還包括一第一電極128及一第三電極(圖未繪示),第一電極128設置於第二半導體層126上,第三電極則設置於第一半導體層122上。 1A-1H are schematic cross-sectional views showing a manufacturing process of a light emitting diode device according to an embodiment of the invention. The system of the light-emitting diode device of this embodiment The method includes the following steps: First, a light emitting diode structure as shown in FIG. 1A is provided, which includes a substrate 110, a first light emitting diode 120, a second light emitting diode 130, and a wire layer. 150. In this embodiment, the substrate 110 may be a growth substrate for semiconductor growth, such as a sapphire substrate. The first light emitting diode 120 is disposed on one surface 112 of the substrate 110 and includes a first electrode 128 and a first light emitting layer 124, wherein the first light emitting layer 124 defines a first light emitting region. In detail, the first light emitting diode 120 includes a first semiconductor layer 122, a first light emitting layer 124, and a second semiconductor layer 126 stacked from the surface 112 in a direction away from the surface 112, and the first light emitting layer. 124 defines the first illuminating region described above. The first LED 128 further includes a first electrode 128 and a third electrode (not shown). The first electrode 128 is disposed on the second semiconductor layer 126, and the third electrode is disposed on the first semiconductor layer 122. on.

承上述,第二發光二極體130設置於表面112上,並與第一發光二極體120之間具有一間隙G。第二發光二極體130包括一第二電極138以及一第二發光層134,其中第二發光層134定義出第二發光區域。詳細而言,第二發光二極體130包括一第三半導體層132、一第二發光層134和一第四半導體層136,分別自表面112依序往遠離表面112的方向堆疊,而第二發光層134定義出上述的第二發光區域。第二發光二極體130還包括一第四電極(圖未繪示),第二電極138設置於第三半導體層132上,第四電極則設置於第四半導體層136上。具體而言,本實施例的第一半導體層122與第三半導體層132為N型半導體層,而第二半 導體層126與第四半導體層136為P型半導體層。此外,第一發光層124以及第二發光層134例如為多重量子井(multiple quantum well,MQW)。 In the above, the second LED 230 is disposed on the surface 112 and has a gap G between the first LEDs 120. The second light emitting diode 130 includes a second electrode 138 and a second light emitting layer 134, wherein the second light emitting layer 134 defines a second light emitting region. In detail, the second LED 230 includes a third semiconductor layer 132, a second luminescent layer 134, and a fourth semiconductor layer 136, which are sequentially stacked from the surface 112 in a direction away from the surface 112, and second. The luminescent layer 134 defines the second illuminating region described above. The second LED 130 further includes a fourth electrode (not shown). The second electrode 138 is disposed on the third semiconductor layer 132, and the fourth electrode is disposed on the fourth semiconductor layer 136. Specifically, the first semiconductor layer 122 and the third semiconductor layer 132 of the embodiment are N-type semiconductor layers, and the second half The conductor layer 126 and the fourth semiconductor layer 136 are P-type semiconductor layers. In addition, the first luminescent layer 124 and the second luminescent layer 134 are, for example, multiple quantum wells (MQW).

接上述,本發明在基板110的表面上設置一導線層150且位於間隙G內,如圖1A所示,以電性連接第一發光二極體120以及第二發光二極體130。更明確的說,導線層150是電性連接第一發光二極體120的第三電極以及第二發光二極體130的第四電極。導線層150的材料包括但不限制於鎳(Ni)、金(Au)、銠(Rh)、銀(Ag)、鈦(Ti)、鋁(Al)、鉭(Ta)、釩(V)等導電材料或其組合接著,如圖1B所示,形成一第一絕緣層140a,其覆蓋如圖1A所示的發光二極體晶片結構,也就是第一絕緣層140a覆蓋第一發光二極體120、第二發光二極體130以及導線層150的表面。在本實施例中,第一絕緣層140a接觸第一半導體層122、第二半導體層126、第三半導體層132及第四半導體層136,其材料為氧化物,包括但不限制於二氧化矽(SiO2)、二氧化鈦(TiO2)等絕緣材料。接著,再如圖1C所示,移除位在第一電極128以及第二電極138的頂面之部份第一絕緣層140a,以暴露出第一電極128以及第二電極138之頂面。在本實施例中,移除部份第一絕緣層140a的方法例如為蝕刻。要說明的是,由於本發明的第一絕緣層140a是形成在導線層150與後續形成的反射層之間,且接觸第一半導體層122、第二半導體層126、第三半導體層132及第四半導體層136,因此,本發明的第一絕緣層140a除了有電性隔離的特性之外,還可防止反 射層的金屬原子擴散至半導體層中,進而影響發光二極體晶片的發光效率。 In the above, the present invention provides a wire layer 150 on the surface of the substrate 110 and is located in the gap G. As shown in FIG. 1A, the first LED body 120 and the second LED body 130 are electrically connected. More specifically, the wire layer 150 is a third electrode electrically connected to the first light emitting diode 120 and a fourth electrode of the second light emitting diode 130. The material of the wire layer 150 includes, but is not limited to, nickel (Ni), gold (Au), rhenium (Rh), silver (Ag), titanium (Ti), aluminum (Al), tantalum (Ta), vanadium (V), and the like. Conductive material or a combination thereof Next, as shown in FIG. 1B, a first insulating layer 140a is formed, which covers the light emitting diode wafer structure as shown in FIG. 1A, that is, the first insulating layer 140a covers the first light emitting diode. 120, the second light emitting diode 130 and the surface of the wire layer 150. In this embodiment, the first insulating layer 140a contacts the first semiconductor layer 122, the second semiconductor layer 126, the third semiconductor layer 132, and the fourth semiconductor layer 136, and the material thereof is an oxide, including but not limited to cerium oxide. An insulating material such as (SiO 2 ) or titanium dioxide (TiO 2 ). Next, as shown in FIG. 1C, a portion of the first insulating layer 140a positioned on the top surface of the first electrode 128 and the second electrode 138 is removed to expose the top surfaces of the first electrode 128 and the second electrode 138. In the present embodiment, the method of removing a portion of the first insulating layer 140a is, for example, etching. It is to be noted that since the first insulating layer 140a of the present invention is formed between the wiring layer 150 and the subsequently formed reflective layer, and contacts the first semiconductor layer 122, the second semiconductor layer 126, the third semiconductor layer 132, and the The fourth semiconductor layer 136, therefore, in addition to the electrical isolation characteristics of the first insulating layer 140a of the present invention, the metal atoms of the reflective layer can be prevented from diffusing into the semiconductor layer, thereby affecting the luminous efficiency of the light-emitting diode wafer.

請同時參照圖1D以及圖1E,接續形成一反射層190,覆蓋第一絕緣層140a,以使第一絕緣層140a位於導線層150與反射層190之間。在本實施例中,反射層190為一具有高反射率的材料,包括但不限制於銀(Ag)等高反射率的材料,且反射層190連續地形成於第一發光區域、第二發光區域以及導線層150上,且位於第一發光層124與第一接墊160之間以及第二發光層134與第二接墊170之間,以同時反射第一發光層124以及第二發光層134所發出的光線。反射層190例如透過電鍍的方式如圖1D所示形成於第一絕緣層140a、第一電極128以及第二電極138之頂面,再如圖1E所示,例如透過蝕刻製程來移除位在第一電極128以及第二電極138的頂面之部份反射層190,以如圖1E所示暴露第一電極128以及第二電極138之頂面。要說明的是,由於本發明的反射層190是設置在第一發光二極體120及第二發光二極體130上,因此,本發明的反射層190可以同時反射來自第一發光層124及第二發光層134的光,如此一來,提升了本發明發光二極體晶片的整體發光效率。 Referring to FIG. 1D and FIG. 1E simultaneously, a reflective layer 190 is formed to cover the first insulating layer 140a such that the first insulating layer 140a is located between the wire layer 150 and the reflective layer 190. In this embodiment, the reflective layer 190 is a material having high reflectivity, including but not limited to a material having high reflectivity such as silver (Ag), and the reflective layer 190 is continuously formed in the first light-emitting region and the second light-emitting region. The region and the wire layer 150 are located between the first luminescent layer 124 and the first pad 160 and between the second luminescent layer 134 and the second pad 170 to simultaneously reflect the first luminescent layer 124 and the second luminescent layer 134 emitted light. The reflective layer 190 is formed on the top surface of the first insulating layer 140a, the first electrode 128, and the second electrode 138, as shown in FIG. 1D, for example, as shown in FIG. 1D, and is removed by, for example, an etching process. The first electrode 128 and a portion of the top surface of the second electrode 138 are reflective layer 190 to expose the top surfaces of the first electrode 128 and the second electrode 138 as shown in FIG. 1E. It should be noted that, since the reflective layer 190 of the present invention is disposed on the first light emitting diode 120 and the second light emitting diode 130, the reflective layer 190 of the present invention can simultaneously reflect the first light emitting layer 124 and The light of the second light-emitting layer 134, as a result, improves the overall luminous efficiency of the light-emitting diode wafer of the present invention.

請同時參照圖1F以及圖1G,接著,形成一第二絕緣層140b,其覆蓋反射層190,因此,第一絕緣層140a以及第二絕緣層140b包覆住反射層190。在本實施例中,第二絕緣層140b的材料包括但不限制於二氧化矽(SiO2)、二氧化鈦(TiO2)等絕緣材料, 並如圖1F所示覆蓋反射層190以及第一電極128以及第二電極138之頂面。接著再如圖1E所示,利用例如蝕刻製程來移除位在第一電極128以及第二電極138的頂面之部份第二絕緣層140b,以如圖1G所示暴露第一電極128以及第二電極138之頂面。接著,請參照圖1H,分別設置一第一接墊160以及一第二接墊170於第一電極128以及第二電極138上並與第一電極128以及第二電極138電性連接。在本實施例中,第一接墊160以及一第二接墊170的材料包括但不限制於金錫合金(Gold-Tin)等焊接材料。如此,即大致完成本實施例的發光二極體裝置100之製程。 Referring to FIG. 1F and FIG. 1G simultaneously, a second insulating layer 140b is formed to cover the reflective layer 190. Therefore, the first insulating layer 140a and the second insulating layer 140b cover the reflective layer 190. In the present embodiment, the second insulating layer 140b materials include, but are not limited to silicon dioxide (SiO 2), titanium oxide (TiO 2) of an insulating material, and as shown in FIG. 1F cover the reflective layer 190 and a first electrode 128 And a top surface of the second electrode 138. Next, as shown in FIG. 1E, a portion of the second insulating layer 140b positioned on the top surface of the first electrode 128 and the second electrode 138 is removed by, for example, an etching process to expose the first electrode 128 as shown in FIG. 1G. The top surface of the second electrode 138. Next, a first pad 160 and a second pad 170 are disposed on the first electrode 128 and the second electrode 138 and electrically connected to the first electrode 128 and the second electrode 138. In this embodiment, the materials of the first pads 160 and the second pads 170 include, but are not limited to, solder materials such as gold-tin. Thus, the process of the light-emitting diode device 100 of the present embodiment is substantially completed.

圖2是依照本發明的一實施例的一種發光二極體裝置的剖面示意圖。請參照圖2,依上述製作方法所完成的發光二極體裝置100如圖2所示包括一基板110、一第一發光二極體120、一第二發光二極體130、一絕緣層140(140a、140b)、一導線層150、一第一接墊160以及一第二接墊170。第一發光二極體120設置於基板110的一表面112上。第一發光二極體120包括一第一電極128、一第三電極(圖未繪示)以及一第一發光區域。第二發光二極體130亦設置於表面112上,並與第一發光二極體120之間具有一間隙。第二發光二極體130包括一第二電極138、一第四電極(圖未繪示)以及一第二發光區域。詳細而言,第一發光二極體120可如前述包括一第一半導體層122、一第一發光層124、一第二半導體層126自表面112往遠離表面112的方向依序堆疊。第一發光層124定義出第一發光區域,而第一電極128設置於第二 半導體層126上,第三電極則設置於第一半導體層122上。第二發光二極體130亦可如前述包括一第三半導體層132、第二發光層134和第四半導體層136自表面112往遠離表面112的方向依序堆疊,其中第二發光層134定義出第二發光區域,而第二電極138設置於第三半導體層132上,第四電極則設置於第四半導體層136上。 2 is a cross-sectional view of a light emitting diode device in accordance with an embodiment of the present invention. Referring to FIG. 2 , the LED device 100 according to the above manufacturing method includes a substrate 110 , a first LED 120 , a second LED 130 , and an insulating layer 140 . (140a, 140b), a wire layer 150, a first pad 160, and a second pad 170. The first light emitting diode 120 is disposed on a surface 112 of the substrate 110. The first light emitting diode 120 includes a first electrode 128, a third electrode (not shown), and a first light emitting region. The second light emitting diode 130 is also disposed on the surface 112 and has a gap with the first light emitting diode 120. The second LED 130 includes a second electrode 138, a fourth electrode (not shown), and a second light emitting region. In detail, the first LEDs 120 may be sequentially stacked in a direction away from the surface 112 from the surface 112 as described above including a first semiconductor layer 122, a first luminescent layer 124, and a second semiconductor layer 126. The first luminescent layer 124 defines a first illuminating region, and the first electrode 128 is disposed at a second On the semiconductor layer 126, a third electrode is disposed on the first semiconductor layer 122. The second light emitting diode 130 may also be sequentially stacked from the surface 112 away from the surface 112 as described above, wherein the second light emitting layer 134 is defined by a second semiconductor layer 132, a second light emitting layer 134, and a fourth semiconductor layer 136. The second light emitting region is disposed, and the second electrode 138 is disposed on the third semiconductor layer 132, and the fourth electrode is disposed on the fourth semiconductor layer 136.

承上述,導線層150設置於間隙G內且電性連接第一發光二極體120與第二發光二極體130,更明確的說,導線層150是電性連接第一發光二極體120的第三電極以及第二發光二極體130的第四電極。絕緣層140則位於導線層150與反射層190之間,以電性隔離導線層150與反射層190。在本實施例中,反射層190連續地設置於第一發光二極體120及第二發光二極體130上,且位於第一發光層124與第一接墊160之間以及第二發光層134與第二接墊170之間。而絕緣層140設置於導線層150與第一接墊160及第二接墊170之間,且接觸第一半導體層122、第二半導體層126、第三半導體層132及第四半導體層136並包覆反射層190之表面,以防止反射層190擴散至第一半導體層122、第二半導體層126、第三半導體層132及第四半導體層136。 The wire layer 150 is disposed in the gap G and electrically connected to the first light emitting diode 120 and the second light emitting diode 130. More specifically, the wire layer 150 is electrically connected to the first light emitting diode 120. The third electrode and the fourth electrode of the second LED 130. The insulating layer 140 is between the wire layer 150 and the reflective layer 190 to electrically isolate the wire layer 150 from the reflective layer 190. In this embodiment, the reflective layer 190 is disposed on the first and second light emitting diodes 120 and 120, and between the first light emitting layer 124 and the first light emitting layer 160 and the second light emitting layer. 134 is between the second pad 170. The insulating layer 140 is disposed between the wire layer 150 and the first pad 160 and the second pad 170, and contacts the first semiconductor layer 122, the second semiconductor layer 126, the third semiconductor layer 132, and the fourth semiconductor layer 136. The surface of the reflective layer 190 is coated to prevent the reflective layer 190 from diffusing to the first semiconductor layer 122, the second semiconductor layer 126, the third semiconductor layer 132, and the fourth semiconductor layer 136.

如此配置,發光二極體裝置100即可透過第一接墊160以及第二接墊170電性連接至承載器200上。也就是說,本實施例的發光二極體裝置100可透過覆晶接合的方式與承載器200形成電連接。因此,發光二極體裝置100即可藉由導熱效率高的第 一接墊160、第二接墊170將其產生的熱能傳導至承載器,而無須透過導熱效率較差的基板110來進行散熱,因而能提高發光二極體裝置100的散熱效率。而反射層190可同時反射第一發光層124及第二發光層134所發出的光線,以增加發光二極體裝置100的出光效率。 In this way, the LED device 100 can be electrically connected to the carrier 200 through the first pad 160 and the second pad 170. That is to say, the LED device 100 of the present embodiment can be electrically connected to the carrier 200 by means of flip chip bonding. Therefore, the light-emitting diode device 100 can be replaced by a heat-transfer efficiency A pad 160 and a second pad 170 conduct heat generated by the pad 160 to the carrier without dissipating heat through the substrate 110 having poor thermal conductivity, thereby improving the heat dissipation efficiency of the LED device 100. The reflective layer 190 can simultaneously reflect the light emitted by the first light-emitting layer 124 and the second light-emitting layer 134 to increase the light-emitting efficiency of the light-emitting diode device 100.

在一實施例中,第一絕緣層的層數可以是單層或多層,而材料可以是一種或多種。第二絕緣層的層數可以是單層或多層,而材料可以是一種或多種。第一絕緣層與第二絕緣層可以具有相同或不同的層數與材料。在一實施例中,反射層的層數可以是單層或多層,而材料可以是一種或多種。反射層不一定要全面性形成於電極區域上,也可以部份形成於電極區域上。反射層可以是金屬或絕緣材料。在一實施例中,基板不侷限於藍寶石,也可以是絕緣基板、塑膠基板、玻璃基板、氮化鎵(Gallium Nitride,GaN)基板、碳化矽(Silicon Carbide,SiC)基板、矽(Silicon,Si)基板或金屬基板。電極上亦可以形成銦錫氧化物(Indium Tin Oxide,ITO)透明電極圖案。在一實施例中,接墊可以透過平坦化製程完成。在一實施例中,在活性層與半導體層之間,更可包括超晶格(Superlattice)結構。在一實施例中,發光二極體裝置係以覆晶接合(Flip Chip bonding)方式設置於承載器上。 In an embodiment, the number of layers of the first insulating layer may be a single layer or a plurality of layers, and the material may be one or more. The number of layers of the second insulating layer may be a single layer or a plurality of layers, and the material may be one or more. The first insulating layer and the second insulating layer may have the same or different number of layers and materials. In an embodiment, the number of layers of the reflective layer may be a single layer or multiple layers, and the material may be one or more. The reflective layer does not have to be formed integrally on the electrode region, or may be partially formed on the electrode region. The reflective layer can be a metal or an insulating material. In one embodiment, the substrate is not limited to sapphire, and may be an insulating substrate, a plastic substrate, a glass substrate, a Gallium Nitride (GaN) substrate, a Silicon Carbide (SiC) substrate, or a crucible (Silicon, Si). a substrate or a metal substrate. An Indium Tin Oxide (ITO) transparent electrode pattern can also be formed on the electrode. In an embodiment, the pads can be completed through a planarization process. In an embodiment, a superlattice structure may be further included between the active layer and the semiconductor layer. In one embodiment, the light emitting diode device is disposed on the carrier in a flip chip bonding manner.

綜上所述,本發明的發光二極體裝置於其遠離基板的表面上設置接墊,並將電極的電性延伸至接墊,使發光二極體裝置能以覆晶接合的方式連接至承載器上。如此,發光二極體裝置所 產生的熱能即可藉由導熱效率高的接墊將熱能傳導至承載器,而無須透過導熱效率較差的基板來進行散熱,因而能提高發光二極體裝置的散熱效率。再者,由於發光二極體裝置的散熱效率提高,其發光二極體可承載的驅動電流亦可隨之提高,因而可減少發光二極體裝置中發光二極體的數量,進而降低生產成本。此外,反射層設置於發光二極體裝置之發光層與接墊之間,以反射發光層所發出的光線,因而提升了發光二極體裝置的出光效率。 In summary, the light-emitting diode device of the present invention is provided with a pad on a surface away from the substrate, and extends the electrical conductivity of the electrode to the pad, so that the light-emitting diode device can be connected to the flip-chip bonding manner. On the carrier. So, the light-emitting diode device The generated heat energy can conduct heat energy to the carrier through the heat-conducting pad, and does not need to transmit heat through the substrate with poor heat conduction efficiency, thereby improving the heat dissipation efficiency of the light-emitting diode device. Furthermore, since the heat dissipation efficiency of the light-emitting diode device is improved, the driving current that the light-emitting diode can carry can also be increased, thereby reducing the number of light-emitting diodes in the light-emitting diode device, thereby reducing the production cost. . In addition, the reflective layer is disposed between the light-emitting layer of the light-emitting diode device and the pad to reflect the light emitted by the light-emitting layer, thereby improving the light-emitting efficiency of the light-emitting diode device.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧發光二極體裝置 100‧‧‧Lighting diode device

110‧‧‧基板 110‧‧‧Substrate

112‧‧‧表面 112‧‧‧ surface

120‧‧‧第一發光二極體 120‧‧‧First light-emitting diode

122‧‧‧第一半導體層 122‧‧‧First semiconductor layer

124‧‧‧第一發光層 124‧‧‧First luminescent layer

126‧‧‧第二半導體層 126‧‧‧Second semiconductor layer

128‧‧‧第一電極 128‧‧‧First electrode

130‧‧‧第二發光二極體 130‧‧‧Second light-emitting diode

132‧‧‧第三半導體層 132‧‧‧ third semiconductor layer

134‧‧‧第二發光層 134‧‧‧second luminescent layer

136‧‧‧第四半導體層 136‧‧‧fourth semiconductor layer

138‧‧‧第二電極 138‧‧‧second electrode

140‧‧‧絕緣層 140‧‧‧Insulation

140a‧‧‧第一絕緣層 140a‧‧‧first insulation

140b‧‧‧第二絕緣層 140b‧‧‧Second insulation

150‧‧‧導線層 150‧‧‧ wire layer

160‧‧‧第一接墊 160‧‧‧first mat

170‧‧‧第二接墊 170‧‧‧second mat

190‧‧‧反射層 190‧‧‧reflective layer

200‧‧‧承載器 200‧‧‧carrier

Claims (8)

一種發光二極體裝置,包括:一基板,具有一表面;一第一發光二極體,設置於該表面上,該第一發光二極體包括一第一電極以及一第一發光區域;一第二發光二極體,設置於該表面上並與該第一發光二極體之間具有一空隙,該第二發光二極體包括一第二電極以及一第二發光區域;一導線層,設置於該間隙內且電性連接該第一發光二極體與該第二發光二極體;一第一接墊以及一第二接墊,分別設置於該第一電極以及該第二電極上並與該第一電極以及該第二電極電性連接;以及一反射層,連續地設置於該第一發光二極體及該第二發光二極體上,且位於該第一發光區域與該第一接墊之間以及該第二發光區域與該第二接墊之間。 A light-emitting diode device comprising: a substrate having a surface; a first light-emitting diode disposed on the surface, the first light-emitting diode comprising a first electrode and a first light-emitting region; a second light emitting diode disposed on the surface and having a gap with the first light emitting diode, the second light emitting diode comprising a second electrode and a second light emitting region; a wire layer, The first light-emitting diode and the second light-emitting diode are electrically connected to the first light-emitting diode and the second light-emitting diode, respectively disposed on the first electrode and the second electrode And electrically connected to the first electrode and the second electrode; and a reflective layer continuously disposed on the first light emitting diode and the second light emitting diode, and located in the first light emitting region and the Between the first pads and between the second light emitting region and the second pads. 如申請專利範圍第1項所述的發光二極體裝置,其中該第一發光二極體包括一第一半導體層、一第一發光層和一第二半導體層自該表面依序堆疊,該第一發光層定義出該第一發光區域,該第一電極設置於該第二半導體層上,該第二發光二極體包括一第三半導體層、一第二發光層和一第四半導體層自該表面依序堆疊,該第二發光層定義出該第二發光區域,該第二電極設置於該第三半導體層上。 The illuminating diode device of claim 1, wherein the first illuminating diode comprises a first semiconductor layer, a first luminescent layer and a second semiconductor layer sequentially stacked from the surface. The first illuminating layer defines the first illuminating region, the first electrode is disposed on the second semiconductor layer, and the second illuminating diode comprises a third semiconductor layer, a second luminescent layer and a fourth semiconductor layer The second light emitting layer defines the second light emitting region, and the second electrode is disposed on the third semiconductor layer. 如申請專利範圍第2項所述的發光二極體裝置,其中該導線層電性連接該第一發光二極體之一第三電極以及該第二發光二極體之一第四電極。 The illuminating diode device of claim 2, wherein the wire layer is electrically connected to one of the third electrode of the first illuminating diode and the fourth electrode of the second illuminating diode. 如申請專利範圍第2項所述的發光二極體裝置,其中該第 一半導體層與該第三半導體層為N型半導體層,該第二半導體層與該第四半導體層為P型半導體層。 The illuminating diode device of claim 2, wherein the A semiconductor layer and the third semiconductor layer are N-type semiconductor layers, and the second semiconductor layer and the fourth semiconductor layer are P-type semiconductor layers. 如申請專利範圍第1項所述的發光二極體裝置,更包括一絕緣層設置於該導線層與該第一接墊及該第二接墊之間。 The illuminating diode device of claim 1, further comprising an insulating layer disposed between the wire layer and the first pad and the second pad. 如申請專利範圍第5項所述的發光二極體裝置,其中該絕緣層接觸該第一半導體層、該第二半導體層、該第三半導體層以及該第四半導體層,並包覆該反射層。 The light emitting diode device of claim 5, wherein the insulating layer contacts the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer, and covers the reflection Floor. 一種發光二極體裝置的製作方法,包括:提供一發光二極體晶片結構,其包括一基板、一第一發光二極體、一第二發光二極體以及一導線層,其中該第一發光二極體設置於該基板之一表面上,並包括一第一電極以及一第一發光區域,該第二發光二極體設置於該表面上並與該第一發光二極體之間具有一空隙,該第二發光二極體包括一第二電極以及一第二發光區域該導線層連接該第一發光二極體以及該第二發光二極體;形成一第一絕緣層,覆蓋該發光二極體晶片結構;形成一反射層,覆蓋該第一絕緣層,並位於該第一發光區域以及該第二發光區域上;形成一第二絕緣層,覆蓋該反射層;以及分別設置一第一接墊以及一第二接墊於該第一電極以及該第二電極上。 A method for fabricating a light-emitting diode device includes: providing a light-emitting diode structure including a substrate, a first light-emitting diode, a second light-emitting diode, and a wire layer, wherein the first The light emitting diode is disposed on a surface of the substrate, and includes a first electrode and a first light emitting region, wherein the second light emitting diode is disposed on the surface and has a relationship between the first light emitting diode and the first light emitting diode a second light-emitting diode includes a second electrode and a second light-emitting region. The wire layer connects the first light-emitting diode and the second light-emitting diode; forming a first insulating layer covering the a light emitting diode structure; forming a reflective layer covering the first insulating layer and located on the first light emitting region and the second light emitting region; forming a second insulating layer covering the reflective layer; and respectively providing a The first pad and the second pad are on the first electrode and the second electrode. 如申請專利範圍第7項所述的發光二極體裝置的製作方法,在形成該第二絕緣層的步驟之後,更包括暴露該第一電極及該第二電極之頂面之步驟,其中該步驟包括:在形成該第一絕緣層之後,移除部份之該第一絕緣層,以暴露該第一電極以及該第二電極之頂面;在形成該反射層之後,移除部份之該反射層,以暴露該第一 電極以及該第二電極之頂面;以及在形成該第二絕緣層之後,移除部份之該第二絕緣層,以暴露該第一電極以及該第二電極之頂面。 The method for fabricating a light-emitting diode device according to claim 7, further comprising the step of exposing the top surfaces of the first electrode and the second electrode after the step of forming the second insulating layer, wherein the step of forming the second insulating layer The method includes: after forming the first insulating layer, removing a portion of the first insulating layer to expose a top surface of the first electrode and the second electrode; after forming the reflective layer, removing a portion The reflective layer to expose the first An electrode and a top surface of the second electrode; and after forming the second insulating layer, removing a portion of the second insulating layer to expose a top surface of the first electrode and the second electrode.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI718358B (en) * 2018-02-06 2021-02-11 晶元光電股份有限公司 Light-emitting device
TWI755245B (en) * 2018-02-06 2022-02-11 晶元光電股份有限公司 Light-emitting device
TWI781867B (en) * 2018-02-06 2022-10-21 晶元光電股份有限公司 Light-emitting device
TWI804437B (en) * 2018-02-06 2023-06-01 晶元光電股份有限公司 Light-emitting device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI718358B (en) * 2018-02-06 2021-02-11 晶元光電股份有限公司 Light-emitting device
TWI755245B (en) * 2018-02-06 2022-02-11 晶元光電股份有限公司 Light-emitting device
TWI781867B (en) * 2018-02-06 2022-10-21 晶元光電股份有限公司 Light-emitting device
TWI804437B (en) * 2018-02-06 2023-06-01 晶元光電股份有限公司 Light-emitting device

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