TWI641163B - Light-emitting component - Google Patents

Abstract

A light emitting device includes a substrate, a semiconductor structure layer, a first electrode, a second electrode, a third electrode, and a connection layer. The semiconductor structure layer is disposed on the substrate and is divided into a first semiconductor structure layer and a second semiconductor structure layer. The first and second semiconductor structure layers respectively have a light emitting layer, a first type semiconductor layer and a second type semiconductor layer. The first electrode is connected to the second type semiconductor layer of the first semiconductor structure layer. The second electrode is connected to the first type semiconductor layer of the second semiconductor structure layer. The first electrode and the second electrode are electrically connected to each other. The third electrode is connected to the first type semiconductor layer of the first semiconductor structure layer. The connection layer connects the first type semiconductor layer of the first semiconductor structure layer and the second type semiconductor layer of the second semiconductor structure layer.

Description

Light-emitting element

The present invention relates to a light-emitting element and a package structure thereof, and more particularly to a light-emitting element having an electrostatic discharge (ESD protection) function and a package structure thereof.

The light-emitting diode has advantages such as long life, small volume, high shock resistance, low heat generation, and low power consumption, and thus has been widely used as an indicator or a light source in households and various devices. In recent years, light-emitting diodes have developed toward high power, so their applications have expanded to road lighting, large outdoor billboards, traffic lights and related fields. In the future, light-emitting diodes may even become the main source of illumination for both power saving and environmental protection functions.

Although the light-emitting diode has many of the above advantages, it is often damaged by an abnormal voltage or an electrostatic discharge (ESD). In a conventional method, in order to prevent the light-emitting diode from being damaged due to abnormal voltage or electrostatic discharge, the light-emitting diode and the Zener diode are simultaneously disposed on the same substrate, and the light-emitting diode and the light-emitting diode are Zener diodes are directly connected in reverse phase through the electrodes to prevent the LED from being damaged by abnormal voltage or electrostatic discharge.

However, the connection between the general light-emitting diode and the Zener diode is by external metal wiring. However, such an external circuit is likely to cause an open circuit because the connection between the metal wiring and the diode electrode is not strong. Furthermore, the Zener diode cannot function as its voltage regulator; in addition, since the light-emitting diode is connected to the Zener diode, it is necessary to reserve a connection space, and in the current trend of integration, the prior art The arrangement of the middle light-emitting diode and the Zener diode will not be able to effectively utilize the module space, and even sacrifice the light-emitting efficiency of the light-emitting module. Therefore, how to balance the light-emitting efficiency and the static electricity protection is a subject worth considering.

The invention provides a light emitting element and a package structure thereof.

A light emitting device according to an embodiment of the invention includes a substrate and a first semiconductor structure layer and a second semiconductor structure layer. The first semiconductor structure layer and the second semiconductor structure layer are disposed on the substrate spaced apart from each other, and the first semiconductor structure layer continuously surrounds the second semiconductor structure layer. The first semiconductor structure layer and the second semiconductor structure layer respectively have a first type semiconductor layer, a second type semiconductor layer, and a carrier bonding layer disposed between the first type semiconductor layer and the second type semiconductor layer, wherein The carrier bonding layer of the first semiconductor structure layer is one of a forward light emitting layer and a non-directional light emitting layer, and the carrier bonding layer of the second semiconductor structure layer is one of a forward light emitting layer and a non-directional light emitting layer. another.

The light-emitting element of the present invention comprises a substrate, a first light-emitting unit and a second light-emitting unit. The first light emitting unit and the second light emitting unit are disposed on the substrate, and a gap is formed between the first light emitting unit and the second light emitting unit to expose a portion of the substrate, wherein the first light emitting unit and the second light emitting unit respectively have a a first type semiconductor layer, a second type semiconductor layer, and a light emitting layer disposed between the first type semiconductor layer and the second type semiconductor layer. An insulating layer fills the gap and substantially completely covers the exposed portion of the substrate, and the insulating layer exposes the first type semiconductor layer of the first light emitting unit and the second type semiconductor layer of the second light emitting unit. An electrical connection layer is disposed on the insulating layer and substantially completely shields the exposed portion of the substrate, and the electrical connection layer is electrically connected to the first type semiconductor layer of the first light emitting unit and the second type semiconductor layer of the second light emitting unit.

The light-emitting element of the present invention comprises a substrate, a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The first type semiconductor layer and the second type semiconductor layer are disposed on the substrate, the light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer, and the second type semiconductor layer and the light emitting layer are exposed to the first part Type semiconductor layer. A pad high layer is disposed on the exposed portion of the first type semiconductor layer and a conductive layer is disposed on the second type semiconductor layer. An insulating layer is disposed on the exposed portion of the first type semiconductor layer and the conductive layer, and forms a first opening and a second opening to respectively expose the upper layer and the conductive layer. A first electrode layer is disposed on the insulating layer and filled in the first opening, and is electrically connected to the first type semiconductor layer through the upper layer of the pad. A second electrode layer is disposed on the insulating layer and filled in the second opening, and is electrically connected to the second type semiconductor layer through the conductive layer.

In an embodiment of the invention, the light emitting device further includes a first electrode and a second electrode, and the first semiconductor layer of the first semiconductor structure layer has a first contact and a second contact. The first contact of the first semiconductor layer of the first semiconductor structure layer is electrically connected to the second semiconductor layer of the second semiconductor structure layer, and the first electrode is electrically connected to the first semiconductor layer of the first semiconductor structure layer. The second contact is electrically connected to the second semiconductor layer of the first semiconductor structure layer.

In an embodiment of the invention, the second electrode is electrically connected to the first type semiconductor layer of the second semiconductor structure layer.

In an embodiment of the invention, the light-emitting element further includes a pad upper layer and a conductive layer. The high layer of the pad is disposed on the first type semiconductor layer of the first semiconductor structure layer and electrically connected to the first electrode. The conductive layer is disposed on the second type semiconductor layer of the first semiconductor structure layer and electrically connected to the second electrode.

In an embodiment of the invention, the light-emitting element further includes an insulating layer disposed on the exposed portion of the first-type semiconductor layer and the conductive layer, and forming a first opening and a second opening to be respectively exposed. Pad high layer and conductive layer. The first electrode layer is disposed on the insulating layer and filled in the first opening, and the second electrode layer is disposed on the insulating layer and filled in the second opening.

In an embodiment of the invention, the first light emitting unit continuously surrounds the second light emitting unit.

In an embodiment of the invention, the conductive layer comprises an ohmic contact layer.

In an embodiment of the invention, the conductive layer includes an ohmic contact layer and a reflective layer, and the ohmic contact layer is between the reflective layer and the second type semiconductor layer.

Based on the above, the light-emitting element of the present invention has the design of the second light-emitting diode, so that the first light-emitting diode can be prevented from being damaged by electrostatic discharge, and the service life of the first light-emitting diode can be prolonged. Therefore, the light emitting element package structure using the light emitting element can have a better ESD protection function. In addition, the light-emitting element of the present invention can simultaneously manufacture the first light-emitting diode and the second light-emitting diode with voltage stabilization function by the same epitaxial method, which not only reduces the process cost, but also increases the unit area that can be placed during packaging. The number of wafers. Furthermore, the buried connection layer of the present invention can prevent the external metal connection from being broken by the external force and cause the component to fail due to the conventional connection of the individual electrodes by metal wiring, thereby preventing the second illumination. The situation in which the polar body cannot protect the first light-emitting diode occurs.

The above described features and advantages of the invention will be apparent from the following description.

FIG. 1A is a cross-sectional view of a light emitting device according to an embodiment of the invention. Referring to FIG. 1A , in the embodiment, the light emitting device 100 a includes a substrate 110 , a semiconductor structure layer 120 , a first electrode 132 , a second electrode 134 , a third electrode 136 , and a connection layer 140 . The substrate 110 has an upper surface 112. The semiconductor structure layer 120 is disposed on the upper surface 112 of the substrate 110 and is divided into a first semiconductor structure layer 120a and a second semiconductor structure layer 120b. The first semiconductor structure layer 120a and the second semiconductor structure layer 120b are isolated from each other and expose a portion of the upper surface 112 of the substrate 110. The first semiconductor structure layer 120a and the second semiconductor structure layer 120b respectively have a first type semiconductor layer 122 disposed on the upper surface 112, a second type semiconductor layer 126, and a first type semiconductor layer 122 and a second layer. Light-emitting layer 124 between the semiconductor layers 126.

As shown in FIG. 1A, the first electrode 132 of the present embodiment is connected to the second type semiconductor layer 126 of the first semiconductor structure layer 120a, wherein the first electrode 132 is electrically connected to the second type semiconductor layer 126 of the first semiconductor structure layer 120a. . The second electrode 134 is connected to the first type semiconductor layer 122 of the second semiconductor structure layer 120b, wherein the second electrode 134 is electrically connected to the first type semiconductor layer 122 of the second semiconductor structure layer 120b, and the first electrode 132 and the second electrode The 134 are isolated from each other and have a spacing. The third electrode 136 is connected to the first type semiconductor layer 122 of the first semiconductor structure layer 120a, wherein the third electrode 136 is electrically connected to the first type semiconductor layer 122 of the first semiconductor structure layer 120a. The connection layer 140 connects the first type semiconductor layer 122 of the first semiconductor structure layer 120a and the second type semiconductor layer 126 of the second semiconductor structure layer 120b, wherein the connection layer 140 is electrically connected to the first type semiconductor of the first semiconductor structure layer 120a. The layer 122 and the second type semiconductor layer 126 of the second semiconductor structure layer 120b have a spacing between the connection layer 140 and the third electrode 136. The first electrode 132, the third electrode 136 and the first semiconductor structure layer 120a define a first light-emitting diode D1. The second electrode 134 and the second semiconductor structure layer 120b define a second LED D2. Here, the first type semiconductor layer 122 is, for example, an N type semiconductor layer, and the second type semiconductor layer 126 is, for example, a P type semiconductor layer. At this time, the second electrode 134 and the third electrode 136 will be the N electrode, and the first electrode 132 will be the P electrode. Of course, the first type semiconductor layer 122 may be a P-type semiconductor layer according to the process, and the second The semiconductor layer 126 is an N-type semiconductor layer. Thus, the corresponding second electrode 134 and third electrode 136 will be P electrodes, and the first electrode 132 will be N electrodes. A first surface 132a of the first electrode 132, a second surface 134a of the second electrode 134, and a third surface 136a of the third electrode 136 are substantially flush.

In detail, the thickness of the first semiconductor structure layer 120a of the present embodiment is substantially the same as the thickness of the second semiconductor structure layer 120b. The first type semiconductor layer 122 of the first semiconductor structure layer 120a has a flat plate portion 122a and a protruding portion 122b on the flat plate portion 122a. The light emitting layer 124 of the first semiconductor structure layer 120a and the second type semiconductor layer 126 are located on the protruding portion 122b, and the third electrode 136 and the connecting layer 140 are electrically connected to the flat plate portion 122a, respectively. On the other hand, the first type semiconductor layer 122 of the second semiconductor structure layer 120b has a flat plate portion 122a' and a projection portion 122b' on the flat plate portion 122a'. The light emitting layer 124 of the second semiconductor structure layer 120b and the second type semiconductor layer 126 are located on the protruding portion 122b', and the second electrode 134 is electrically connected to the flat plate portion 122a'. Here, the orthographic projection area of the first semiconductor structure layer 120a on the upper surface 112 is greater than the orthographic projection area of the second semiconductor structure layer 120b on the upper surface 112. Preferably, the ratio of the orthographic projection area of the first semiconductor structure layer 120a to the orthographic projection area of the second semiconductor structure layer 120b is between 10 and 10,000, and optimally between 100 and 1000. In this way, the first semiconductor structure layer 120a and the second semiconductor structure layer 120b can be simultaneously fabricated by the same epitaxial process, and because the area ratio of the second semiconductor structure layer 120b and the first semiconductor structure layer 120b are greatly different, It can achieve the effect of not affecting the light extraction efficiency and electrostatic protection at the same time.

More specifically, the light-emitting element 100a of the present embodiment further includes an insulating layer 150 disposed on the upper surface 112 exposed by the first semiconductor structure layer 120a and the second semiconductor structure layer 120b, and extending at least to cover the first semiconductor The structural layer 120a and the side surface of the second semiconductor structure layer 120b. As shown in FIG. 1A, the insulating layer 150 fills the gap between the first semiconductor structure layer 120a and the second semiconductor structure layer 120b and extends to the flat portion 122a of the first type semiconductor layer 122 of the first semiconductor structure layer 120a. And a portion of the insulating layer 150 is located between the connection layer 140 and the upper surface 112. The insulating layer 150 may be disposed on the portion of the second type semiconductor layer 126 and extend downwardly to cover the side surfaces of the second type semiconductor layer 126, the light emitting layer 124, and the protruding portion 122b (122b') of the first type semiconductor layer 122. Preferably, the insulating layer 150 also covers the partial flat portion 122a (122a') of the first type semiconductor layer 122 of the first semiconductor structure layer 120a, which may have better insulation effect. Here, the material of the insulating layer 150 is, for example, tantalum oxide or tantalum nitride, so that contact between the electrodes can be avoided to cause the electron holes to fail to bond in the semiconductor structure layer 120, thereby causing the components to fail.

In addition, the light-emitting element 100a of the present embodiment further includes an electrically insulating layer 160 disposed on the connection layer 140 between the first electrode 132 and the connection layer 140 and between the second electrode 134 and the connection layer 140. It can prevent short circuit between electrodes due to contact. In addition, the light emitting device 100a of the embodiment further includes a pad high layer 170 and a conductive structure layer 180. The pad high layer 170 is disposed between the third electrode 136 and the flat portion 122a of the first type semiconductor layer 122 of the first semiconductor structure layer 120a, and the second electrode 134 and the first semiconductor layer 122 of the second semiconductor structure layer 120b Between the portions 122a' and between the connection layer 140 and the flat portion 122a of the first type semiconductor layer 122 of the first semiconductor structure layer 120a. The conductive structure layer 180 is disposed on the second type semiconductor layer 126 of the first semiconductor structure layer 120a and the second type semiconductor layer 126 of the second semiconductor structure layer 120b, wherein the insulating layer 150 extends over the partial conductive structure layer 180. And the first electrode 132 and the connection layer 140 are connected to the conductive structure layer 180. The second type semiconductor layer 126 can form a good ohmic contact with the first electrode 132 by the conductive structure layer 180. Here, the conductive structure layer 180 is, for example, a transparent conductive layer or a reflective layer, wherein the transparent conductive layer is made of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), Zinc oxide (ZnO), indium tin zinc oxide (ITZO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO) or other suitable The transparent conductive material, and the material of the reflective layer is, for example, aluminum (Al), silver (Ag), gold (Au) or an alloy thereof.

It should be noted that, in other embodiments, referring to FIG. 1B , the conductive structure layer 180 ′ of the light-emitting element 100 b of the present embodiment includes a transparent conductive layer 182 and a reflective layer 184 , wherein the reflective layer 184 covers the transparent conductive layer 182 . . Here, the material of the reflective layer is, for example, aluminum (Al), silver (Ag), gold (Au) or an alloy thereof, and the material of the transparent conductive layer 182 is, for example, indium tin oxide (ITO) or indium zinc. Indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), aluminum tin oxide (ATO), aluminum zinc oxide ( Aluminum zinc oxide, AZO) or other suitable transparent conductive material. When the conductive structure layer 180 is a reflective layer or the conductive structure layer 180 ′ includes the reflective layer 184 and the transparent conductive layer 182 , the conductive structure layer 180 , 180 ′ can reflect the light emitted by the light emitting layer 124 , so that the semiconductor structure layer 120 The flip-chip light-emitting element; when the conductive structure layer 180 only contains the transparent conductive layer, the light is emitted outward through the conductive structure layer 180, so that the conductive structure layer 180 of this type is suitable for use on the horizontal light-emitting element.

The design of the light-emitting element 100a of the present embodiment is that the first electrode 132 and the second electrode 134 are isolated from each other, wherein the first electrode 132 is electrically connected to the second-type semiconductor layer 126 of the first semiconductor structure layer 120a, and the second electrode 134 is electrically connected. The first type semiconductor layer 122 of the second semiconductor structure layer 120b is electrically connected. The connection between the first light-emitting diode D1 and the second light-emitting diode D2 by the internal connection layer 140 prevents the line from being broken by an external force, and is disposed on the first-type semiconductor layer 122 of the first semiconductor structure layer 120a. The third electrode 136 is isolated from the connection layer 140, so that the light-emitting element 100a can be easily connected to a carrier (not shown) when packaged. The first electrode 132 and the second electrode 134 are flush with the third electrode 136, and the flatness of the light emitting element 100a can be maintained when packaged with the carrier.

2 is a cross-sectional view showing a light emitting device package structure according to an embodiment of the invention. Referring to FIG. 2, in the embodiment, the light emitting element package structure 200 includes a carrier 210 and the light emitting element 100a of FIG. 1A. The carrier 210 has a bearing surface 212 , a first pad 222 and a second pad 224 . The first pad 222 and the second pad 224 are separated from each other and located on the bearing surface 212 . The third electrode 136 of the light-emitting element 100a is electrically connected to the first pad 222, and the first electrode 132 of the light-emitting element 100a is electrically connected to the second electrode 134 and electrically connected to the second pad 224. Here, the first pad 222 and the third electrode 136 are eutectic bonded, and the second pad 224 is eutectic bonded to the first electrode 132 and the second electrode 134.

3 is a schematic plan view of a light-emitting element according to an embodiment of the present invention. It should be noted that a cross-section along line A-A' of FIG. 3 is a schematic view of the light-emitting element of FIG. 1A. In detail, referring to FIG. 1 and FIG. 3 simultaneously, the maximum width W of the first surface 132a of the first electrode 132 is slightly equal to the maximum width W' of the third surface 136a of the third electrode 136, and the first surface 132a The ratio of the area to the area of the third surface 136a is between 0.9 and 1. As a result, the electrodes having similar surface areas can increase the assembly convenience with the carrier, and the difference between the conventional electrode and the electrode is too large to cause solidification. Crystal or reflow assembly yields problems with poor yield or uneven surface.

Since the light-emitting element 100a of the present embodiment has the design of the second light-emitting diode D2, when the light-emitting element 100a is transmitted through the second pad 224 of the carrier 210 to electrically connect the first electrode 132 and the second electrode 134, The two-light-emitting diode D2 can prevent the first light-emitting diode D1 from being damaged by electrostatic discharge, and can extend the service life of the first light-emitting diode D1. Therefore, the light emitting element package structure 200 of the present embodiment has a function of ESD protection. In addition, since the first surface 132a of the first electrode 132, the second surface 134a of the second electrode 134, and the third surface 136a of the third electrode 136 are substantially flush, when the first electrode 132, the second electrode 134 and the first The two pads 224 are eutectic bonded, and when the third electrode 134 is eutectic bonded to the first pads 222, in addition to having better flatness, it also has better bonding strength.

In summary, since the light-emitting element of the present invention is designed such that the first electrode and the second electrode are isolated from each other, wherein the first electrode is connected to the second-type semiconductor layer of the first semiconductor structure layer, and the second electrode is connected to the second semiconductor structure The first type semiconductor layer of the layer is connected to the first type semiconductor layer of the first semiconductor structure layer and the second type semiconductor layer of the second semiconductor structure layer by the buried connection layer, so that the connection between the electrodes is not easily affected External force is destroyed. Furthermore, by supplying the same voltage to the first electrode and the second electrode separated by the second pad on the carrier, the current can be uniformly transmitted to the first electrode and the second electrode, and the second light emitting diode is shortened. The reaction time for the body to initiate electrostatic protection. In addition, since the light-emitting element of the present invention has the design of the second light-emitting diode, the first light-emitting diode can be prevented from being subjected to electrostatic discharge damage, and the service life of the first light-emitting diode can be prolonged. Therefore, the light emitting element package structure using the light emitting element can have a better ESD protection function.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100a, 100b‧‧‧Lighting elements
110‧‧‧Substrate
112‧‧‧ upper surface
120‧‧‧Semiconductor structural layer
120a‧‧‧First semiconductor structural layer
120b‧‧‧Second semiconductor structural layer
122‧‧‧First type semiconductor layer
122a, 122a'‧‧‧ flat section
122b, 122b'‧‧‧ protruding parts
124‧‧‧Lighting layer
126‧‧‧Second type semiconductor layer
132‧‧‧First electrode
132a‧‧‧ first surface
134‧‧‧second electrode
134a‧‧‧ second surface
136‧‧‧ third electrode
136a‧‧‧ third surface
140‧‧‧Connection layer
150‧‧‧Insulation
160‧‧‧Electrical insulation
170‧‧‧ high-rise
180, 180'‧‧‧ conductive structural layer
200‧‧‧Lighting element package structure
210‧‧‧ Carrier
212‧‧‧ bearing surface
222‧‧‧first mat
224‧‧‧second mat
D1‧‧‧First Light Emitting Diode
D2‧‧‧Second light-emitting diode
W, W'‧‧‧Maximum width

FIG. 1A is a cross-sectional view of a light emitting device according to an embodiment of the invention. FIG. 1B is a cross-sectional view of a light emitting device according to another embodiment of the present invention. 2 is a cross-sectional view showing a light emitting device package structure according to an embodiment of the invention. 3 is a top plan view of a light emitting device according to an embodiment of the invention.

Claims (9)

A light-emitting element comprising: a substrate; a first semiconductor structure layer and a second semiconductor structure layer disposed on the substrate separately from each other, and the first semiconductor structure layer continuously surrounds the second semiconductor structure layer, wherein The first semiconductor structure layer and the second semiconductor structure layer respectively have a first type semiconductor layer, a second type semiconductor layer, and a carrier disposed between the first type semiconductor layer and the second type semiconductor layer a bonding layer, wherein the carrier bonding layer of the first semiconductor structure layer is one of a forward light emitting layer and a non-directional light emitting layer, and the carrier bonding layer of the second semiconductor structure layer is a forward light emitting layer and The other one of the non-directional light-emitting layers; and a first electrode and a second electrode, and the first-type semiconductor layer of the first semiconductor structure layer has a first contact and a second contact, wherein The first contact of the first semiconductor layer of the first semiconductor structure layer is electrically connected to the second semiconductor layer of the second semiconductor structure layer, and the first electrode is electrically connected to the first semiconductor structure layer The second type semiconductor layer of the first-type semiconductor layer, the second contact point, at least the second electrode is electrically connected to the first semiconductor layer structure. The light-emitting element of claim 1, wherein the second electrode is electrically connected to the first-type semiconductor layer of the second semiconductor structure layer. The illuminating device of claim 1, further comprising: a pad upper layer disposed on the first type semiconductor layer of the first semiconductor structure layer and electrically connected to the first electrode; and a conductive layer And disposed on the second semiconductor layer of the first semiconductor structure layer, and electrically connected to the second electrode. The illuminating device of claim 3, further comprising: an insulating layer disposed on the exposed portion of the first type semiconductor layer and the conductive layer, and forming a first opening and a second opening Exposing the upper layer of the pad and the conductive layer respectively, wherein the first electrode layer is disposed on the insulating layer and filling the first opening, and the second electrode layer is disposed on the insulating layer and filling the second opening. A light-emitting element includes: a substrate; a first light-emitting unit and a second light-emitting unit are disposed on the substrate at intervals, and a gap is formed between the first light-emitting unit and the second light-emitting unit to expose a portion of the light-emitting unit a substrate, wherein the first light emitting unit and the second light emitting unit respectively have a first type semiconductor layer, a second type semiconductor layer, and a light emitting between the first type semiconductor layer and the second type semiconductor layer An insulating layer filling the gap and substantially completely covering the exposed portion of the substrate, the insulating layer exposing the first type semiconductor layer of the first light emitting unit and the second type semiconductor of the second light emitting unit And an electrical connection layer disposed on the insulating layer and substantially completely shielding the exposed portion of the substrate, wherein the electrical connection layer is electrically connected to the first type semiconductor layer of the first light emitting unit and the second light emitting layer The second type of semiconductor layer of the cell. The illuminating element of claim 5, wherein the first illuminating unit continuously surrounds the second illuminating unit. A light emitting device comprising: a substrate; a first type semiconductor layer disposed on the substrate; a second type semiconductor layer disposed on the substrate; a light emitting layer disposed on the first type semiconductor layer and the first Between the two types of semiconductor layers, and the second type semiconductor layer and the light emitting layer expose a portion of the first type semiconductor layer; a pad upper layer disposed on the exposed portion of the first type semiconductor layer; a conductive layer, Arranging on the second type semiconductor layer; an insulating layer disposed on the exposed portion of the first type semiconductor layer and the conductive layer, and forming a first opening and a second opening to respectively expose the upper layer of the pad And a conductive layer; a first electrode layer disposed on the insulating layer and filled in the first opening, electrically connected to the first type semiconductor layer through the upper layer of the pad; and a second electrode layer disposed thereon The second opening is filled in the insulating layer, and is electrically connected to the second type semiconductor layer through the conductive layer. The light-emitting element of claim 7, wherein the conductive layer comprises an ohmic contact layer. The illuminating element of claim 7, wherein the conductive layer comprises an ohmic contact layer and a reflective layer, the ohmic contact layer being located between the reflective layer and the second type semiconductor layer.