TWI246781B - Light emitting diodes (LED) - Google Patents

Abstract

Disclosed is a light emitting diode which is applicable to a flat led made of quaternary epitaxial (InGaAlP) layers in particular. The invention firstly forms the quaternary epitaxial layers consisting of a first material layer, emitting layer, and a second layer; secondly a transparent substrate is fixedly installed on the surface of the second layer; after the semiconductor substrate is removed, an isolation trench and a first extended trench are installed on the lower surface of the first material layer respectively, which allow passing through the first material layer and a part of the second material layer. A first extended electrode is disposed inside the first extended trench which is in electrical connection with a first electrode of the first material layer, thereby enabling the first electrode to be located at a horizontal level approximately identical to that of a second electrode disposed at the other portion of the first material layer. This invention facilitates the subsequent fabrication processes, moreover, enlarges the active light-emitting region of the PN junction, hence, enhancing the efficiency of luminance and prolonging the life span of LED.

Description

1246781 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a light-emitting diode, and more particularly to a planar light-emitting diode that can be applied to a quaternary epitaxial layer, which is convenient for subsequent processes. In this way, the illuminating effect area of the PN interface can be increased, so that the illuminating brightness and the service life are improved. [Prior Art] Light-Emitting Diodes (LEDs) have the characteristics and advantages of long life, small size, low heat generation, low power consumption, fast response, no radiation, and monochromatic illumination. Therefore, it is widely used in various products such as indicator lights, advertising billboards, traffic lights, car lights, display panels, communication devices, and consumer electronics. According to the conventional light-emitting diode, for example, a light-emitting diode having a quaternary epitaxial layer, as shown in FIG. 1, the light-emitting element 丨〇 is mainly formed on a semiconductor substrate 11 (such as a GaAs substrate) to form an epitaxial layer. The layer 3 is formed by combining at least a first material layer 1 3 i, a light-emitting layer 丨 3 2 and a second material layer 丨 3 3 . Continuing, a first electrode 17' is fixed on the upper surface of the second material layer 133, and a second electrode 15 is fixed on the lower surface of the semiconductor substrate. When the first electrode 17 and the second electrode 15 act, The luminescent layer 132 will produce a projected light source, such as front side light L1, L2. Since the GaAs substrate u has the property of absorbing the light source and not transmitting light, the output light flux and the luminosity of the light-emitting diode have a great influence. Therefore, a film between the substrate and the first material layer 131 may be provided. Reflective layer 19 (also known as a scattered Bragg reflection)

1246781 V. DESCRIPTION OF THE INVENTION (2) Layer DBR), whereby the back surface light L3 generated by the light-emitting layer 132 can be reflected to the front side light-emitting portion as indicated by a broken line. Although the conventional light-emitting diode can generate a projection light source, the front light L2 is still absorbed by the first electrode 17 and cannot be projected to the outside world. For this reason, the industry has developed a variety of quaternary epitaxial layers of light-emitting diodes. The improved structure, as shown in FIG. 2, is mainly formed on the surface of the second material layer 丨3 3 by first forming an optically transparent substrate 21 such as a GaP substrate by an adhesive layer 22 or direct epitaxy (referred to as a GaP substrate). a wind 〇 w iayer or thick transparent layer), and then opaque (; aAs substrate 11 is removed. Continuing, a portion of the epitaxial layer (2 3 5 ) is removed by a general semiconductor process to form a first trench The groove 23 is exposed to a portion of the lower surface of the second material layer 133. Thereafter, a conductive layer 29 and a second electrode 25 are sequentially disposed on the lower surface of the first material layer 131, and the exposed second material layer 133 is disposed. A first electrode 27 is fixed on the lower surface. Thus, when the light-emitting layer 132 acts to generate a light source, the back light L4 can be projected to the outside through the transparent substrate 21 without being affected by the absorption of the first electrode 27. This effectively improves the brightness of the light In addition, with the second conventional structure, it is also convenient to become a flip-chip light-emitting diode (FI ip-Chip LED; for example, the configuration shown in the figure of the present invention). The polar body can obtain better light-emitting efficiency and luminosity, but it has the following disadvantages: 1. For the placement of the first electrode 27, part of the epitaxial layer 2 3 5 must be removed, and the partial light-emitting effect is relatively lost. Area and reduce the brightness of the light. 2. For the placement of the first electrode 27, part of the epitaxial layer 235 must be removed,

1246781

V. DESCRIPTION OF THE INVENTION (3) This will cause the first electrode 27 and the second electrode 25 not to be at the same level, and it is relatively difficult to perform subsequent fabrication. 3. Since part of the luminescent layer 1 32 will be removed, the illuminating area will be squeezed relative to the illuminating area, so that the high temperature will easily concentrate in a certain area, and the life of the illuminating element will be relatively reduced. & 4 · Since the transparent substrate of different materials is directly epitaxially or fixed on an epitaxial layer by an adhesive layer, not only the process is cumbersome, but also the production yield is lowered. 〃 【Contents】 For this reason, how to design a novel quaternary epitaxial layer light-emitting diode 29' can not only effectively distribute the working current density, but also improve the light-emitting rate and brightness, and the first electrode and the second The electrode can naturally be located at the same level of the second level, which is convenient for subsequent production, and this is the focus of the invention. The main object of the present invention is to provide a light-emitting diode which can meet the technical difficulties faced by the above-mentioned light-emitting diode. The secondary purpose of the invention is to provide a light-emitting diode that allows the first electrode to be fluxed in the presence of a portion of the epitaxial layer. Another purpose of the solid-state position to effectively increase the light-emitting region and the output photo-electrode is to provide a light-emitting diode in which the first German green L and the second electrode are located at approximately the same horizontal position, thereby facilitating In the paragraph, the production is carried out.

Ϊ246781 '^---- V. Description of the invention (4) The illuminating operation of the large area of the vehicle of the present invention can effectively improve the light absorbing effect of the further quaternary epitaxial layer of the present invention fixed on the wire, The main purpose of the above-mentioned purpose is at least a layer and a surface of a second material layer; a light-transmitting purpose is to provide a region for use, so that the purpose of using the light-emitting element is to provide a power supply substrate, and can also be relatively improved. Therefore, in the present invention, there is included: a type of current usage. The light-pole body is uniformly distributed, and the second material substrate is fixed to the first electrode of the first material layer, and is fixed to the first material layer to be fixed to the first portion, and can be extended through the first recess: And at least one shell of the other material layer of the other material layer and extending into the first groove to provide a first electrically isolated groove, disposed in the first electric material layer and extending to the second material A light-emitting diode can not only avoid the production yield. One of the preferred embodiments includes a layer disposed on the upper layer of the first layer, the cladding layer securing a material to the surface of the lower surface; a material of the surface of the ten pole and the first layer; and an electrode connected to at least one layer - the electrode Part of the body, the light substrate or the embodiment, the first material-material layer surface; a second electrode extending groove volume, extending between the electrodes, can be accumulated 0 [Embodiment] For a better understanding and understanding of the structural features and the achievable effects of the invention, the following is a description of the preferred embodiment and the detailed description, as follows: Please refer to Figures 3A to 3C, respectively A preferred embodiment of the light-emitting diode of the present invention is constructed in various fabrication steps; the fabrication of the present invention mainly includes the following steps:

1246781 V. INSTRUCTION DESCRIPTION (5) First, a semiconductor substrate 31 such as a GaAs substrate (light absorbing substrate) is provided, and a first material layer 331 (such as an N-type or P-type cladding layer) is sequentially grown on the upper surface of the GaAs substrate 31. ), the light-emitting layer 332 and the second material layer 333 (such as a P-type or N-type cladding layer) are formed to form a four-dimensional crystal layer 33 as shown in FIG. 3A. The luminescent layer 332 can be a PN interface, and can be selected from a ternary or quaternary compound, such as aluminum arsenide (A丨GaAs) or aluminum gallium phosphide (A 1 Ga I nP). Or homogenous structure of aluminum gallium indium phosphide, single heterostructure, double heterostructure, quantum well structure. μ ' ^ Further, a light-transmissive substrate 41 is formed on the upper surface of the second material layer 333 by an adhesive layer 42 or a direct stupid crystal, such as filled gallium (〇a ρ ), glass (Glass ), sapphire ( Sapphire, SiC, GaAsP, ZnSe, ZnS, ZnSSe or quartz, and will be opaque and will absorb projection The GaAs substrate 31 of the light source is removed. Further, at least one isolation groove 376 and at least one first extension groove 371 are drilled in a portion of the lower surface of the first material layer, and the first isolation groove 376 and the first extension groove 371 are transparent. The first material layer 331, the light-emitting layer 332, and a portion of the first material layer 333 in the vertical direction are as shown in FIG. 3B. Of course, in another embodiment of the present invention, after the second material layer 33 3 is formed, it can continue to grow a thick light transmission which is made of the same material as the second material layer 3 3 3 without the doping concentration. The layer 41, for example, the quaternary material A1GaInP, in place of the GaP substrate formed in the above embodiment, can not effectively solve the non-ohmic connection by the characteristics of the same material of the thick transparent layer 41 and the second material layer 333.

Page 9 !246781 _. V. Description of invention (6) $ = Causes high resistance, and can simplify the production process and increase production yield. Therefore, it can be applied to various planar LEDs. Second, in the isolation recess 3 76, space can be isolated or filled with other insulating materials to form an isolation layer 377, and the first extension recess 371 is provided with a first extension electrode having an electrical function. 37 5, the first extension electrode 375 electrically connects the second material layer 333, and is electrically isolated from the first material layer 3 3 i by the isolation trench 376 or the barrier of the isolation layer. Moreover, the first electrode 37 may be fixed on the upper surface of the first extension 375 and the lower surface of the first material layer 331, and the first electrode 37 may be electrically connected to the first extension electrode 375. A conductive layer 39 and a second electrode 35 may be sequentially disposed in the lower portion of the first material layer 3 3 j via the isolation layer 374. Thus, when the first electrode 37 and the second electrode 35 are electrically conductive, the action current can pass through the light-emitting layer 332 through the extension electrode 375 to generate a projection light source, such as the lunar surface light L4, as shown in FIG. 3C. Figure 4 shows. In order to make the action current more evenly distributed, so that the light area can be enlarged, the operating temperature is lowered, and the component life is effectively extended. 2 The isolation groove 376 can be designed to be close to the peripheral position of the stray layer 33, and The second and second extension electrodes 378 are electrically connected to the first electrode and the first material layer 333, and A material layer 331 is electrically spaced and the first "" extends the (4) 5 and the second extension electrode 378 can be selected as a long strip, a ring, a semi-ring, a circle, a rectangle, a straight shape, and the like. By. Because the light-emitting diode of the present invention does not need to remove a large area of stray layer (

Page 10 1246781 V. Inventive Note (7) In the case of 23, the first electrode 37 and the second electrode 35 can be fixed, and therefore, the first electrode 3 and the second electrode 35 have approximately the same horizontal position, and Conducive to the subsequent production process. In order to smoothly guide the front light generated by the P N interface without being absorbed by the first electrode 35, the conductive layer 39 can also be made of a material having a reflective property. In addition, please refer to FIG. 5A and FIG. 5B, which are respectively a structural sectional view and a bottom view of another embodiment of the present invention; as shown in the figure, in this embodiment, mainly in the light emitting diode A second electrode 35〇 of a large area is fixed on the lower surface of the first material layer 333, and the V layer and the reflection b of the second electrode 35 are replaced by the second electrode 35 instead of the conductive layer (3 g of the above embodiment). In this way, not only can the current distribution be more evenly distributed, but also the front light source can be directly reflected to form a reflective light source L5, thereby relatively increasing the output luminous flux. Continuation, please refer to FIG. 6A and FIG. 6B, which are respectively a structural sectional view and a bottom view of another embodiment of the present invention; as shown, the light-emitting element 60 of the present invention is mainly disposed in a first material layer 331. At least one first extending groove βγι that can penetrate through the first material layer 331, the light emitting layer 332 and a portion of the second material layer 3 33 is disposed at an appropriate position, and is disposed on the inner surface of the first extending groove and the third electrode A recessed isolation layer 677 and a surface isolation layer 679 having an insulating property are disposed in a predetermined position, and a first extension electrode 675 having a conductive property is further disposed in the recess isolation layer 677, and the first extension electrode 6? The crucible is electrically connected to a first electrode π which is not on the upper surface of the surface isolation layer 679. Further, in order to allow the operating current to be evenly distributed, a second electrode 65 is directly provided on the surface of the remaining first material layer 331. So not only the same

Page 11 1246781 V. DESCRIPTION OF THE INVENTION (8) It can be achieved that the first electrode 67 has approximately the same level as the second electrode 65, and the light-emitting layer 323 is removed, and the active area is smaller, and most of the light-emitting layer The remaining positions of 3 32 can be retained, so the output luminous flux will be greatly improved. 7A and 7B are a cross-sectional view and a bottom view of a further embodiment of the present invention; as shown, the second electrode of the above embodiment is mainly used (6 5 Changed to the second electrode 7 5 ' with a smaller area of action, while the lower surface of the first material layer 331 is evenly distributed with a plurality of ohmic contact points 7 7 , and the second electrode 7 5 , the ohmic contact point 7 7 and the first Between the material layers 3 3 1 , a conductive layer 7 9 is provided, so that the working current can be evenly distributed in most of the range of the layer 33, which can not only effectively increase the output luminous flux, but also prolong its use. life. Referring to FIGS. 8A and 8B, a cross-sectional view and a bottom view of a further embodiment of the present invention; as shown, the main extension groove 871 and the groove are mainly isolated. The layer 877 and the first extension electrode 875 are disposed adjacent to the peripheral position of the first material layer 331, and the other lower positions of the first material layer 331 are respectively provided with a plurality of ohmic contact points 857 and a conductive layer 8 5 5 The surface of the conductive layer 855 is sequentially provided with a surface isolation layer 879 and a first drain electrode 87. The first electrode 87 can also be connected to each of the first extension electrode holders, and the other surface of the conductive layer 855 is provided with a surface. When the first electrode 作用 and the second electrode 85 are actuated, the first extending groove 87 and the extension electrode 875 have been moved to the Lei except for the back light L4 and the reflected light L5 of the previous example. The position of the periphery of the crystal layer 33, therefore,

Page 12 1246781

The light-emitting layer 3 3 2 of the first electrode 8 7 in the vertically extending position without being removed can be used as a projection light source, such as the back light L6 and the reflected light L7, whereby the first electrode 87 and the second electrode 85 are not only The same level of height can be approximated, and the range of action of the luminescent layer 3 3 2 can also be expanded. In order to effectively increase the brightness of the light, the conductive layer 855 can also be made of a material having a good reflective effect. In addition, please refer to FIG. 9 for a structural cross-sectional view of still another embodiment of the present invention; as shown, the light-emitting element (80) of the above embodiment is mainly inverted, so that the first electrode 87 can be borrowed. The second conductive electrode 85 is electrically connected to the first conductive line 897 disposed on a power supply substrate 89 by a first conductive bump 878. The second electrode 85 is also recognized by a second conductive bump 858. One of the second conductive lines 895 on the power supply substrate 8 is electrically connected, so that it can be a flip-chip LED (Flip Chip LED), which can also generate back light L4, L6 and reflected light L5. , L7. And of course, the first conductive bump 878 and the second conductive bump 858 can be selected as "a conductive material having a conductive property, a solder ball, a metal-containing substance or any conductive material, and the power supply substrate 8 9 It can be selected as a material with good thermal conductivity or ", ^ / service coefficient similar to the insect crystal layer 3 3 , such as ceramics, glass 1, nitrided IS, tantalum nitride, aluminum oxide, epoxy resin, Urea resin, plastic, diamond, yttria, boron nitride, circuit board, printed circuit board, pc board or tantalum carbide, tantalum, gallium nitride coated with dielectric materials (such as SiO 2 , Ti 〇 2, Si 3 N 4 , etc.) And other materials. Since the light-emitting element of the present invention has the first electrode 87 and the second electrode 85 at approximately the same horizontal position, it is required for subsequent fabrication.

Page 13 V. Description of the Invention (10) The first conductive bump 878 and the second conductive bump 858 can be set to have the same size and volume, so that not only can the fabrication be facilitated, but also because the first conductive bump 878 And the second conductive bump 858 has the same force on both sides, so that the state of the flip-chip light-emitting diode 90 is not caused, so that the working stability of the component can be relatively improved. For the purpose of the present invention, please refer to Fig. 1 for a cross-sectional view showing a configuration of still another embodiment of the present invention. Although each of the above embodiments is directed to a ternary light-emitting element or a four-turn light-emitting element, the present invention can also be applied to light-emitting elements of other compound epitaxial layers, such as blue light-emitting elements, in accordance with the technical features of the present invention. As shown in the figure, the light-emitting element 1 is mainly formed by directly growing a first material layer 931 and a second material layer 933 on an LED substrate (transparent substrate) 91, and the first material layer 931 and the second material. A PN interface can be formed between the layers 933 from the iron. A first extending groove 971 is formed in the periphery of the surrounding light-emitting element 1 and is disposed through the second material layer 933 and a portion of the first material layer 931, and the surface of the second material layer 933 is firstly provided with a conductive or Reflective effect of the transparent contact layer, ohmic contact layer or reflective 9 6 and second material layer 9 μ 夕 柄, 真% 士 ^ m ^ ^ ^ ^ ^ Peripheral Han has a barrier layer 98, a third extension in the isolation layer 98 The groove 951, the second electrode π of the phantom can be connected to the second material layer 933 directly or via the reflective sound rq β -TL φ. The periphery of the ring layer 931 and the isolation layer 98 may be provided with one: the irJV first ring side electrode 974 may be electrically connected to the first electrode 97: :: the Hth working current is evenly distributed, #高发光The action area, = the brother-electrode 97 and the second electrode 95 are at the same level

Page 14 1246781 V. Description of Invention (11) - 1 section: Η · 芩 芩 芩 芩 芩 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 ' ' ' ' ' ' ' ' ' ' ' ' ' ' After the shape of the second layer, the material layer 331, the light-emitting layer 332, and the second solar layer 33, the volume is not fixed on the surface of the second material layer 333, and is respectively disposed on the second electrode. 89 female, > soil, plate U 1 ), but on the surface of the second material layer 3 3 3 to the isolation groove 376 and at least a first extension groove 371, each of the partitions, the groove 37β and The first extending groove 3 71 can penetrate the first material layer 333, the light emitting layer 332 and a portion of the first material layer 331 extending in the vertical extending direction. The first extending electrode 375 is disposed in the extending groove 371. Further, a first electrode 37 and a splicing are disposed at a suitable position of the material layer 33 3 , and the epitaxial layer 33 is placed on the IGBT substrate 31 on a supply or submount. The first electrode 37 of the epitaxial layer 33 can be The second conductive layer 35 of the epitaxial layer 33 is electrically connected to the second conductive layer 89 5 of the power supply substrate 89. After the table, the GaAs substrate 31 is removed by a semiconductor process to form a light-emitting element 110. By the thickness of the power supply substrate 89 to facilitate the subsequent process of the light-emitting element 11 ' and since the power supply substrate 8.9 is not designed as a light-emitting direction, it can be selected as a thermal conductivity or with an epitaxial layer 3 3 . The thermal expansion coefficient is close to the material to facilitate the working quality and service life of the light-emitting element 11 . Since the light-emitting element of the present invention has the first electrode 37 and the second electrode 35 of approximately the same level or the like, when forming a flip-chip LED 110, it is not required to be borrowed like a conventional structure. The two electrodes have the same level of height by conductive bumps of different heights.

Page 15 1246781

Therefore, the first electrode 37 can be directly electrically connected to the first conductive line 89, and the second electrode 85 is directly electrically connected to the second conductive line 89. 5, 1 , / Miscellaneous, see also 1 2 The figure is a structural sectional view of another embodiment of the present invention; as shown in the figure, the power supply substrate 89) of the above embodiment is mainly replaced by an antistatic protection element 890. The ESD first electrode 891 on the antistatic protection component 890 is electrically connected to the second electrode 35 of the epitaxial layer 33, and the ESD second electrode 892 is electrically connected to the first electrode 37 of the epitaxial layer 33. Thus, the epitaxial layer 33 and the antistatic protection element 35 can be formed as an anti-parallel circuit and combined into a light-emitting element 12A. When the electrostatic discharge phenomenon occurs in the manufacturing process or the use process of the light-emitting element 120, an abnormally large input voltage Vcc will be formed at both ends of the anti-static protection element 89, causing a collapse effect of the anti-static protection element 890 (Break) As (4)), the abnormal majority current will pass through the antistatic protection element 89, without damaging the epitaxial layer 33. s Finally, please refer to FIG. 1 3 , which is a structural sectional view of still another embodiment of the present invention; as shown in the figure, mainly on the antistatic protection element 99 § has a history comparable to the epitaxial layer 33 A third supply circuit 9 97 electrically connected to an electrode 37, a third supply circuit 997 and an antistatic protection element 99 () are provided with an isolation layer 995, and the VRD first electrode 991 is electrically connected to the crystal layer 33. The second electrode 35' and the second electrode 992 of the VRD are electrically isolated from the crystal layer 33, so that the epitaxial layer 33 and the antistatic protection element 99 can become a light-emitting element 130' of a series circuit state. The original antistatic protection component 99 can also be turned into a voltage adjustment component 990. By epitaxial layer 33 and voltage regulation

I No. 16 1246781, invention description (13) The whole device is designed as a series circuit, which not only has the function of resisting the surge voltage, but also can combine various light-emitting elements with similar driving voltages, for the combined light-emitting device. For example, RGB full-color lighting devices will be of great help. = 杬 杬 杬 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 One of the elements of the 3-5 element, the electrostatic protection circuit or other equivalent diode, the material selection is preferably in consideration of the breakdown voltage set by the illuminating element (Breakdown V〇ltage) The coefficient of thermal expansion of the epitaxial layer 33. Moreover, in another embodiment of the present invention, the antistatic protection component 8 90 or the electrical and adjustment component 900 can also be selected by combining a plurality of diodes in a series or parallel configuration. An antistatic protection component 89 or a voltage adjustment component 990 may also be electrically connected to a plurality of epitaxial layers 33, and at the same time, a plurality of sa layers 33 are subjected to antistatic voltage protection or driving voltage adjustment functions. In summary, when it is known that the present invention relates to a light-emitting diode, the special-purpose planar light-emitting diode that can be applied to the quaternary epitaxial layer can not only facilitate the subsequent process, but also Increasing the illuminating effect area of the interface, so as to improve the illuminating brightness and the service life. Therefore, the present invention is novel, progressive and available for industrial use, and should conform to the patent application requirements of the Chinese patent law. To file an invention patent application, the Prayer Council will grant a patent at an early date, and the feeling is praying. However, the above description is only a preferred embodiment of the present invention, and

Page 17 1246781 V. INSTRUCTIONS (14) The scope and structure, the spirit and the spirit of the invention are to be construed as being limited to the scope of the invention. Within the scope of the patent application of the invention.

Page 18 1246781 Brief description of the drawing Fig. 1 is a structural sectional view of a conventional light-emitting diode; Fig. 2 is a structural sectional view of another conventional light-emitting diode; Figs. 3A to 3C: FIG. 4 is a structural sectional view showing a preferred embodiment of the light-emitting diode of the present invention at each manufacturing step; FIG. 4 is a structural sectional view of the embodiment of the present invention as shown in FIG. 3C; FIG. 5A: A cross-sectional view of a further embodiment of the present invention; FIG. 5B is a bottom view of the embodiment of the present invention as shown in FIG. 5A. FIG. 6A is a cross-sectional view showing a configuration of still another embodiment of the present invention; 6B is a bottom view of the embodiment of the present invention as shown in FIG. 6A. FIG. 7A is a structural sectional view of still another embodiment of the present invention; FIG. 7B is a view of the present invention as shown in FIG. 8A is a structural cross-sectional view of another embodiment of the present invention; and FIG. 8B is a bottom view of the construction of the present invention as shown in FIG. 8A: FIG. A structural cross-sectional view of another embodiment of the present invention; FIG. 10 is a structural cross-sectional view of still another embodiment of the present invention; Fig. 2 is a cross-sectional view showing a structure of still another embodiment of the present invention; and Fig. 3 is a structural sectional view showing still another embodiment of the present invention.

Page 19 1246781

Page 20 Schematic description of the drawing 10 Light-emitting element 100 Light-emitting element 110 Light-emitting element 120 Light-emitting element 130 Light-emitting element 11 LED substrate 13 Crystal layer 131 First material layer 132 Light-emitting layer 133 Second material layer 15 Second electrode 17 First electrode 19 Reflective layer 21 transparent substrate 22 adhesive layer 23 first trench 235 partial crystal layer 25 second electrode 27 first electrode 29 conductive layer 31 LED substrate 33 crystal layer 331 first material layer 332 light emitting layer 333 second material layer 35 second Electrode 350 second electrode 37 first electrode 371 first extension groove 372 second extension groove 375 first extension electrode 376 isolation groove 377 isolation layer 378 second extension electrode 39 conductive layer 41 transparent substrate 42 adhesive layer 50 light Element 60 Light-emitting element 65 Second electrode 67 First electrode 671 First extension groove 675 First extension electrode 677 Groove isolation layer 67 9 surface isolation layer 70 light-emitting element 75 first electrode 77 ohmic contact point 1246881 simple description of the figure 79 conductive layer 80 light-emitting element 85 second electrode 855 conductive layer 857 ohmic contact point 858 second conductive bump 87 first electrode 871 An extension groove 875 a first extension electrode 877 a groove isolation layer 878 a first conductive bump 879 a surface isolation layer 89 a power supply substrate 890 an antistatic protection element 891 ESD first electrode 892 ESD second electrode 895 second conductive layer 897 first Conductive layer 90 flip-chip light-emitting diode 91 LED substrate 931 first material layer 933 second material layer 95 second electrode 951 third extension groove 96 reflective layer 97 first electrode 971 first extension groove 974 first ring side Electrode 98 isolation layer 990 voltage adjustment element 991 VRD first electrode 992 VRD second electrode 995 isolation layer 997 third power supply circuit

Page 21

Claims (1)

1246781 _ Case No. 93107.R7R Λ__L· 曰 Repair _ VI. The scope of application for patents. 6 . The light-emitting diode according to claim 1 , wherein the first material layer and the second material layer are respectively selected as a homogenous structure of a gallium aluminum phosphide indium, a single heterostructure, and a double heterostructure. One of the quantum well structures and their combinations. The light-emitting diode according to claim 1, wherein the light-transmissive substrate is selected from the group consisting of glass, sapphire, carbon carbide, gallium-filled gallium 4, zinc telluride, zinc sulfide, One of lanthanum sulphide, quartz and combinations thereof. • A light-emitting diode as described in claim 1 is provided with an isolation layer in the recess. • A portion of the lower surface of a light-emitting diode layer as described in claim 1 is provided with a conductive layer. • The light-emitting diode layer as described in claim 9 can also be made of a reflective material. • The light-emitting diode extension groove described in item 1 of the patent application can be selected from one of a point shape, a long strip shape, a ring shape, a shape, a straight line, a semi-ring shape, and a combination thereof. The light-emitting diode of claim 1, wherein the stray layer is grown on a light-absorbing substrate and the light-transmissive substrate is formed on the upper surface of the second material layer, and then the light-absorbing substrate is removed. . The light-emitting diode according to claim 12, wherein the light-absorbing substrate is a GaAs substrate. • The light-emitting diode according to claim 1, wherein the 7 8 9 10 11 12 13 14 Page 23 of which the circular shape, the moment 1246881 --- case number 9310757 &__^__3-§-Ml----- 6, the patent scope of the first electrode and the second electrode is called to cover the entire first material layer The vertical extension of the surface, and made of materials with conductive and reflective functions. 1 5 · According to the light-emitting diode of the first item of the patent application, there is a power supply substrate, and a first conductive layer and a second conductive layer are respectively disposed on the upper surface thereof, wherein the first conductive layer and the first conductive layer are The first electrode is electrically connected to the second electrode and the second conductive layer is electrically connected to the second electrode. The light-emitting diode of claim 5, wherein the first conductive layer is electrically connected to the first electrode by a first conductive bump, and the second conductive layer is The second electrode is electrically connected to the second electrode by a second conductive bump, so that the light-emitting diode becomes a flip-chip light-emitting diode. 1 7 · The light-emitting diode according to claim 15 wherein the 18 19 electrical substrate can be a ceramic, glass, aluminum nitride, tantalum nitride, oxidized metal, epoxy resin, urea Resin, plastic, diamond, yttria, nitriding, circuit board, printed carbonized tantalum, niobium, gallium nitride and the groove as in the first application of the patent range can be isolated by a groove in which the groove isolating layer The device is disposed between the electrode and the first material layer, and the first material layer and the first material layer are respectively electrically connected to the first material layer, such as the circuit board of the first application, the PC board, and the dielectric layer. One of the combinations of materials. The light-emitting diode is replaced by the spacer and a surface isolation layer extending in the recess, and the surface isolation layer is fixed to the first surface to isolate the extension electrode from the first electrode. a light-emitting diode, wherein the first 1246781 Case No. Q310 575_月月日 @ |7:___ VI. Patent Application Scope There is a reflective layer on the lower surface of the material layer. The light-emitting diode according to claim 1, wherein the extending groove ring is disposed at a periphery of the first material layer and can penetrate a part of the volume of the second material layer to extend into the groove. A groove isolation layer and an extension electrode are sequentially disposed. The light-emitting diode according to claim 20, wherein the extension electrode is a ring-side electrode. The light-emitting diode according to the first aspect of the invention, wherein the light-transmitting substrate is selected to be formed by a second material layer having an undoped ion concentration. The light-emitting diode according to claim 1, wherein the light-transmitting substrate is selected from the group consisting of aluminum gallium indium phosphide having an undoped ion concentration. The light-emitting diode according to claim 15 , wherein the power supply substrate is an electrostatic protection component, and an upper surface of the ESD first electrode and an esd second electrode are respectively disposed on the upper surface, wherein the ESD is An electrode may be electrically connected to the second electrode of the far-line layer, and the second electrode of the ESD is electrically connected to the first electrode of the stray layer. 2 5 . The light-emitting diode according to claim 24, wherein the electrostatic protection element is selected from a Zener diode, a Schottky diode, a thiol diode, and a 3_5 element. One of the diodes, the electrostatic protection circuit, and a combination thereof. 2 6 · The light-emitting diode according to claim 5, wherein the 0-heart, the electrical substrate can be a voltage adjusting component, respectively, and a VRD first 1246781 ----- Case No. 93107575__^ Although -^ VI. Application for patent scope The electrode and a VRD second electrode, and the VRD third electrode is electrically connected to the two electrodes of the crystal layer. The illuminating body of claim 26, wherein the voltage adjusting component further comprises a third supply circuit electrically connected to the first electrode of the insect layer, and the third supply circuit and There is also an isolation layer between the voltage regulating components. 2 8 . The light-emitting body according to claim 26, wherein the voltage adjusting element is selected from the group consisting of a Zener diode, a Schottky diode, a thiol diode, and a 3-pole. One of the diodes composed of the group 5 elements, the electrostatic protection circuit, and one of the combinations thereof. The main structure of the light-emitting diode includes: a worm layer including a first layer of material And a first material layer, wherein the second material layer is fixed on the upper surface of the first material layer; a transparent substrate is fixed on the upper surface of the second material layer; at least one extending groove can penetrate through the first a material layer extending to a portion of the volume of the second material layer, a recess isolation layer and an extension electrode are sequentially disposed in the extension groove, and the extension electrode is electrically connected to the first material layer by the groove isolation layer a first electrode is fixed on a lower surface of the first material layer via a surface isolation layer, and is electrically connected to the extension electrode; and a second electrode is fixed on the first electrode The other portion of the material layer is the lower surface, and the second electrode is associated with the An electrode having approximately the same horizontal height position. 3 〇 · A kind of light-emitting diode, the main structure of which includes at least: 1246781 1246781 . - Extravagant statement 93107575 Day of the month Amendment 6. Application for patent coverage. The light-emitting diode according to claim 31, wherein the power supply substrate is a ceramic, glass, aluminum nitride, tantalum nitride, oxidized chain, epoxy resin, urea resin, Plastic, diamond, yttria, nitriding, circuit board, printed circuit board, PC board, carbonized tantalum, tantalum, gallium nitride and other combinations of dielectric materials. 3 6 · The light-emitting diode according to claim 30, wherein the spacer is replaced by a groove isolation layer and a surface isolation layer, wherein the groove isolation layer is disposed thereon An extension groove is interposed between the extension electrode and the second material layer, and a surface isolation layer is fixed between the first electrode and the second material layer, so that the extension electrode and the first electrode are respectively respectively The two material layers are electrically isolated. The light-emitting diode of claim 3, wherein the power supply substrate is an electrostatic protection component, and an upper surface of the ESD first electrode and an ESD second electrode are respectively disposed on the upper surface, wherein the ESd The first electrode is electrically connected to the second electrode of the epitaxial layer, and the second electrode of the ESD is electrically connected to the first electrode of the epitaxial layer. 38. The light-emitting diode according to claim 37, wherein the electrostatic protection element is selected from the group consisting of a Zener diode, a Schottky diode, a Shishiji diode, and a 3 - 5 One of a diode composed of a family element, an electrostatic protection circuit, and a combination thereof. The light-emitting diode according to the third aspect of the invention, wherein the power supply substrate is a voltage adjustment component, respectively provided with a V r D first electrode and a VRD second electrode, and the VRD number An electrode can be electrically connected to Page 28 1246781 ___ Case No. 93] 07 anti-__-correction _ __ VI. Patent application scope The two electrodes of the stupid layer. The light-emitting diode according to claim 39, wherein the voltage adjusting component further has a third supply circuit electrically connected to the first electrode of the crystal layer, and the third supply circuit There is also an isolation layer between the voltage adjustment component and the voltage adjustment component. The light-emitting diode according to claim 39, wherein the voltage adjusting element is selected from a Zener diode, a Schottky diode, a thiol diode, and 3 - 5 One of a diode composed of a family element, an electrostatic protection circuit, and a combination thereof. 42. A light-emitting diode, the main structure of which comprises: an epitaxial layer comprising a first material layer and a second material layer, wherein the second material layer is fixed on the upper surface of the first material layer " at least one extending groove may penetrate through the second material layer and extend to a part of the volume of the first material layer, and a recessed isolation layer and an extension electrode are sequentially disposed in the extending groove, and the extension electrode may be Separating from the second material layer by the recess layer; 9 a first electrode is fixed on a portion of the upper surface of the second material layer via a surface isolation layer, and the extension electrode is An electrical connection; and a second electrode 'fixed to the upper surface of the other portion of the second material layer, and the second electrode has approximately the same horizontal position as the first electrode. n