CN101685841A - Light emitting diode chip - Google Patents
Light emitting diode chip Download PDFInfo
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- CN101685841A CN101685841A CN200810161796A CN200810161796A CN101685841A CN 101685841 A CN101685841 A CN 101685841A CN 200810161796 A CN200810161796 A CN 200810161796A CN 200810161796 A CN200810161796 A CN 200810161796A CN 101685841 A CN101685841 A CN 101685841A
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- emitting diode
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Abstract
The invention discloses a light emitting diode chip comprising an epitaxial superposition layer, a first conducting layer and at least one current distribution layer, wherein the first conducting layer is formed on one side of the epitaxial superposition layer; the current distribution layer is formed on one side of the first conducting layer; the current distribution layer comprises a pattern impedance layer and a second conducting layer; the current is evenly distributed on an active layer, thereby evening the light emission, enhancing the efficiency, reducing the heat concentration and prolonging the service life.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit, particularly a kind of light-emitting diode chip for backlight unit is formed on the extension lamination in regular turn by a conductive layer and at least one current distribution layer, makes electric current be evenly distributed on active layer.
Background technology
High Power LED chip (power LED chip) on the market is with regard to area efficiency at present, and the high-capacity LED chip length of side is much in 1000 μ m, and area is greater than 1mm
2, luminous efficiency is compared with less chip, and is much smaller as 610 μ m, 381 μ m, so can improve rated current and wattage and brightness though increase the led chip area, deriving relatively dispels the heat is difficult for problems such as problem and luminous efficiency are low.
Fig. 1 is a kind of profile of known luminescence diode chip for backlight unit.This light-emitting diode chip for backlight unit 1 comprises sapphire (sapphire) substrate 11, resilient coating 12, extension lamination 13, transparency conducting layer 14, n type electrode 16 and p type electrode 17, and wherein extension lamination 13 comprises n type GaN layer 131, active layer 132, p type GaN layer 133.The big more luminous efficiency of light-emitting diode chip for backlight unit 1 area is low more.Wattage improves, and luminous efficiency descends on the contrary, increases the led chip area and causes temperature Centralized and rising, and then cause LED brightness and life-span to descend.
As shown in Figure 1, because p type GaN layer material resistance value is very high, traditional type is healed, and can to cause electric current 18 to distribute more inhomogeneous for big chip area, regional current density height near p type electrode 17, regional electric current 18 density away from p type 17 are low, areas of high current density at nearly p type electrode 17 when the electric current that applies 18 is more and more higher can produce saturated phenomenon and cause the low phenomenon of luminous efficiency, extra electric current will be converted to heat, temperature also will raise, so the led chip area is big more, CURRENT DISTRIBUTION is inhomogeneous more, and unit are efficient is low more, temperature distributing disproportionation is even and also concentrated more, so the active layer 132 that makes the electric current average flow cross LED will help to promote its efficient.
Fig. 2 is the vertical view of another kind of known luminescence diode chip for backlight unit.This light-emitting diode chip for backlight unit 2 is that with light-emitting diode chip for backlight unit 1 difference n type electrode 26 and p type electrode 27 are for referring to insert the shape electrode, have a plurality of weld parts 261,271 and a plurality of extension 262,272 respectively, the extension of the extension of n type electrode 26 262 and p type electrode 27 is 272 parallel to each other, be crisscross arranged.Light-emitting diode chip for backlight unit 2 is for making electric current more even by active layer 132, no matter be that n type electrode 26 or p type electrode 27 all make the slotting shape electrode of complicated finger.Fig. 3 is simulation zero dimensionization (normalized) current density value of the light-emitting diode chip for backlight unit of Fig. 2 along AA ' straight line.By sunykatuib analysis as can be known, under the electric current input of 700mA, the maximum current density value on active layer that this electrode pattern causes 132 planes is 1.951 * 10
6A/m
2, the minimum electrical current density value is 3.152 * 10
5A/m
2, the maximum current density value is about 6 times of minimum electrical current density value, and the current density standard deviation on this plane is 2.34 * 10
5A/m
2
The more light that block of p type electrode pattern also many more more, transparency conducting layer (ITO) is though can make CURRENT DISTRIBUTION more even, but near the close p type electrode still is the highest part of current density, still can cause current density too high, produce electric light conversion saturated phenomenon at active layer, this moment, electro-optical efficiency descended, and the part electric current can't convert light output to, to convert heat at last, and cause temperature to rise.Moreover, light-emitting diode chip for backlight unit complex surfaces electrode pattern, design is difficult for, and yield is poor, produces to be difficult for.Surface electrode (for example p type electrode) is many more, area is big more, and easy more obstructing the light causes luminous efficiency to reduce.A plurality of electrodes, each electrode need be stamped gold thread or the aluminum steel of one or more, and cost is higher.Complex surfaces electrode pattern and a plurality of routing electricity consumption very easily cause the circuit complexity, and adopt more circuit, and the circuit board of use also increases, and cost is also increased.
Summary of the invention
Because above-mentioned problem, a purpose of the present invention is to provide a kind of light-emitting diode chip for backlight unit, be formed on the extension lamination in regular turn by first conductive layer and at least one current distribution layer, make electric current be evenly distributed on active layer, make luminous even, and raise the efficiency, that also reduces heat concentrates life-saving.
Another object of the present invention is to provide a kind of light-emitting diode chip for backlight unit, be formed in regular turn on the extension lamination, make electric current be evenly distributed on active layer, can reduce the area of p type electrode, increase luminous zone by first conductive layer and at least one current distribution layer.
Another purpose of the present invention is to provide a kind of light-emitting diode chip for backlight unit, by increasing the unit are pattern covers rate of patterning impedance layer at second electrode, can promote the uniformity of light-emitting diode chip for backlight unit current density side cloth.
A further object of the present invention is to provide a kind of light-emitting diode chip for backlight unit, when light-emitting diode chip for backlight unit comprises the multilayer current distribution layer, respectively the pattern-free of this patterning impedance layer is partly covered by the pattern of this adjacent patterning impedance layer, can promote the uniformity of light-emitting diode chip for backlight unit current density side cloth.
For reaching above-mentioned purpose, a kind of light-emitting diode chip for backlight unit comprises: an extension lamination; One first conductive layer is formed on the extension lamination; And at least one current distribution layer, be formed on first conductive layer, wherein current distribution layer comprises that a patterning impedance layer and second conductive layer are formed on this first conductive layer in regular turn, make the patterning impedance layer between two conductive layers.
When this light-emitting diode chip for backlight unit comprised the multilayer current distribution layer, the pattern-free of patterning impedance layer was partly covered by the pattern of adjacent patterning impedance layer.
Light-emitting diode chip for backlight unit also comprises at least one first electrode, is formed on exposing to the open air on first semiconductor layer of part; At least one second electrode is formed on the current distribution layer.Wherein first electrode comprises at least one first weld part and extends at least one extension from first weld part, and second electrode comprises at least one second weld part.The unit are pattern covers rate of close second electrode of patterning impedance layer is higher than the unit are pattern covers rate away from second electrode.
From the above, light-emitting diode chip for backlight unit provided by the invention, by being formed on first conductive layer and at least one current distribution layer on the extension lamination in regular turn, make electric current be evenly distributed on active layer, make light-emitting diode chip for backlight unit luminous evenly, and improve luminous efficiency, reduce the intensity of heat simultaneously, prolong the life-span of light-emitting diode chip for backlight unit, and can reduce the area of second electrode, increase luminous zone.By increasing the unit are pattern covers rate of patterning impedance layer, can more promote the uniformity of light-emitting diode chip for backlight unit current density at second electrode.
Description of drawings
Fig. 1 is a kind of profile of known light-emitting diode chip for backlight unit device.
Fig. 2 is the vertical view of the known light-emitting diode chip for backlight unit device of another kind.
Fig. 3 is the simulation zero dimension galvanic current density value of the light-emitting diode chip for backlight unit of Fig. 2 along AA ' line segment.
Fig. 4 A and Fig. 4 B are the profile of two kinds of aspects of light-emitting diode chip for backlight unit of the present invention.
Fig. 5 A to Fig. 5 G is the vertical view of patterning impedance layer of the present invention.
Fig. 6 A to Fig. 6 C is the vertical view of light-emitting diode chip for backlight unit of the present invention, shows the relative position of first and second electrode of light-emitting diode chip for backlight unit.
Fig. 7 is the preferred pattern distribution scenario of patterning impedance layer of the light-emitting diode chip for backlight unit of Fig. 4 A.
Fig. 8 is the simulation zero dimension galvanic current density value of the light-emitting diode chip for backlight unit of Fig. 6 B along BB ' line segment.
Fig. 9 is the profile of the alternative light-emitting diode chip for backlight unit of the present invention.
Figure 10 A and Figure 10 B are the profile of other aspects of light-emitting diode chip for backlight unit of the present invention.
Description of reference numerals
1,2,3,3 ', 4,5: light-emitting diode chip for backlight unit
11,31,41,51: substrate
12,32: resilient coating
13,33: extension lamination
131:n type GaN layer
132,332: active layer
133:p type GaN layer
14: transparency conducting layer
16,26:n type electrode
17,27:p type electrode
18: electric current
261,271,361: weld part
262,272,362: extension
331: the first semiconductor layers
333: the second semiconductor layers
34: the first conductive layers
35,35 ': current distribution layer
351,351 ': the patterning impedance layer
352,352 ': the second conductive layer
36: the first electrodes
37: the second electrodes
42: projection
43: contact mat
44: stick together substrate
Embodiment
Hereinafter with reference to relevant indicators, the light-emitting diode chip for backlight unit according to the preferred embodiment of the present invention is described, wherein identical chip will be illustrated with identical reference marks.
Fig. 4 A and Fig. 4 B are the profile of two kinds of aspects of light-emitting diode chip for backlight unit of the present invention.This light-emitting diode chip for backlight unit 3 comprises substrate 31, resilient coating 32, extension lamination 33, first conductive layer 34 and at least one current distribution layer 35, wherein the light-emitting diode chip for backlight unit 3 of Fig. 4 A comprises a current distribution layer 35, and the light-emitting diode chip for backlight unit 3 ' of Fig. 4 B comprises two current distribution layer 35,35 '.
The substrate 31 of light-emitting diode chip for backlight unit 3 can be sapphire (sapphire), silicon (silicon), carborundum (SiC), MgAl
2O
4Or the material of alloy.Resilient coating 32 is formed on the substrate 31, and it can be individual layer material or multilayer material.Extension lamination 33 is formed on the resilient coating 32, and extension lamination 33 comprises one first semiconductor layer 331, an active layer 332 and one second semiconductor layer 333 in regular turn.First semiconductor layer 331 is the n type semiconductor layer, second semiconductor layer 333 is the p type semiconductor layer, first semiconductor layer 331 can be n-GaN, n-AlGaN, n-GaAs or n-GaP, second semiconductor layer 333 can be p-GaN, p-AlGaN, p-GaAs or p-GaP, active layer 332 is an one layer or more energy gap layer, multi-quantum pit structure (Multiple Quantum Well, MQW) structure or single quantum well structure (Single Quantum Well, SQW), its material can be InGaN (Indium gallium nitride, InGaN), gallium nitride (Galliumnitride, GaN), indium gallium nitride (Gallium indium nitride, GaInN), aluminium gallium nitride alloy (Aluminumgallium nitride, AlGaN), indium nitride (InN), nitrogenize aluminium nitride (AlN), zinc selenide (Zinc selenide, ZnSe), mix InGaN (the Zinc doped Indium gallium nitride of zinc, InGaN:Zn), AlGaInP (Aluminum gallium indium phosphide, AlInGaP) or gallium phosphide (Galliumphosphide, GaP).First conductive layer 34 of light-emitting diode chip for backlight unit 3 is formed on the extension lamination 33, and current distribution layer 35 is formed on first conductive layer 34.Wherein current distribution layer 35 comprises that a patterning impedance layer 351 and one second conductive layer 352 are formed on first conductive layer 34 in regular turn, in order to evenly distributing electric current, make active layer 332 uniformly light-emittings.First and second conductive layer 34,352 is a transparency conducting layer, its material can be indium tin oxide (ITO), zinc oxide (ZnO), aluminium zinc oxide (AZO), antimony-doped stannic oxide (Antimony Doped Tin Oxide, ATO), tin ash (SnO
2).First and second conductive layer can be identical or different material, and patterning impedance layer 351 for example is a transparent dielectric layer for material or the low electrical conductivity material of being electrically insulated, and its material can be silica (SiO
2) or niobium pentaoxide (Nb
2O
5), the pattern of patterning impedance layer 351 can be a plurality of quadrangles (as Fig. 5 A), triangle (as Fig. 5 B), hexagon (as Fig. 5 C), octagon (as Fig. 5 D), circular (as Fig. 5 E), oval (as Fig. 5 F) or its combination, but not as limit.Moreover patterning impedance layer 351 also has the dielectric layer of a plurality of holes, and these holes can be a plurality of triangles, quadrangle (as Fig. 5 G), hexagon, octagon, circle, ellipse or its combination.In addition, the electrical conductivity of this patterning impedance layer 351 gets final product less than the electrical conductivity of first or second conductive layer 34,352, and its refractive index near or equal the refractive index of first or second conductive layer 34,352.
In addition, when at least one current distribution layer 35 is the multilayer current distribution layer, shown in Fig. 4 B, self-luminous diode chip for backlight unit 3 ' overlook direction, the pattern-free of patterning impedance layer 351 is partly covered by the pattern of adjacent patterning impedance layer 351 ', in other words, patterning impedance layer 351 becomes staggered with adjacent patterning impedance layer 351 ', and the length of the patterning impedance layer 351 ' that forms of back is greater than the length of the patterning impedance layer 351 that forms earlier.For instance, if when the pattern of a patterning impedance layer 351 comprises a plurality of quadrangles (as Fig. 5 B), the pattern of the patterning impedance layer 351 ' that it is adjacent can be the dielectric layer with a plurality of quadrangle holes shown in Fig. 5 G, at this moment, current density redistributes once current density via the pattern of the patterned impedance layer 351 in patterning impedance layer 351 ' pattern-free zone again, makes electric current distribution more even.
Shown in Fig. 4 A, 4B and 6A, light-emitting diode chip for backlight unit 3 also comprises at least one first electrode 36 and at least one second electrode 37, and wherein first electrode 36 is formed on part first semiconductor layer 331 that exposes to the open air, and second electrode 37 is formed on the current distribution layer 35.In the present embodiment, first electrode 36 is a n type electrode, be formed on the part n type semiconductor layer 331 that exposes to the open air, second electrode 37 is a p type electrode, be formed on the current distribution layer 35, wherein first electrode 36 comprises at least one weld part 361 and extends at least one extension 362 from weld part 361, second electrode 37 comprises at least one weld part, can extensionless, the weld part 361 and second electrode 37 are in order to electrically connect with the external world, and the extension 362 of first electrode 36 can make the more even distribution of electric current.
In addition, second electrode 37 is formed on the electric current dispersion layer 35, and the current distribution layer 35 and first conductive layer 34 have the function of scattered current, so second electrode 37 can extensionless.First and second electrode 36,37 can be arranged on the neighboring area of light-emitting diode chip for backlight unit 3 accordingly, as shown in Figure 6A.Perhaps, first electrode 36 is arranged on the central area of light-emitting diode chip for backlight unit 3, and second electrode 37 is arranged on the neighboring area of light-emitting diode chip for backlight unit 3, shown in Fig. 6 B.Perhaps, first electrode 36 is arranged on the neighboring area of light-emitting diode chip for backlight unit 3, and second electrode 37 is arranged on the central area of light-emitting diode chip for backlight unit 3, shown in Fig. 6 C.
Moreover, as shown in Figure 7, the unit are pattern covers rate of patterning impedance layer 351 close second electrodes 37 is higher than the unit are pattern covers rate away from second electrode 37, can make patterning impedance layer 351 per unit areas have higher impedance near second electrode 37, patterning impedance layer 351 per unit areas away from second electrode 37 have lower impedance, make CURRENT DISTRIBUTION more even.
Therefore, electric current is from second electrode (for example p type electrode) when flowing through current distribution layer, stopped by at least one patterning impedance layer and be evenly distributed to first conductive layer, arrive active layer through second semiconductor layer (for example p type semiconductor layer) again, after first semiconductor layer (for example n type semiconductor layer) passes to first electrode (for example n type electrode), make the electric current of active layer more even.
Fig. 8 is the simulation zero dimension galvanic current density value of the light-emitting diode chip for backlight unit of Fig. 6 B along BB ' straight line.By sunykatuib analysis as can be known, under the electric current input of 700mA, the maximum current density value on active layer that this electrode pattern causes 332 planes is 1.185 * 10
6A/m
2, the minimum electrical current density value is 6.9 * 10
5A/m
2, the maximum current density value is about 1.7 times of minimum electrical current density value, and the current density standard deviation on this plane is 1.1 * 10
5A/m
2Therefore, compared to Fig. 2, no matter be ratio and the standard deviation of maximum current density value to the minimum electrical current density value, the present invention all has clear improvement.
Fig. 9 is the profile of the another kind of light-emitting diode chip for backlight unit of the present invention.This light-emitting diode chip for backlight unit 4 comprises a substrate 41 in regular turn, resilient coating 32, extension lamination 33, first conductive layer 34, at least one current distribution layer 35, first electrode 36 and second electrode 37, this light-emitting diode chip for backlight unit 4 is that with the foregoing description difference light-emitting diode chip for backlight unit 4 is upside-down mounting chip light-emitting diode chip for backlight unit, the substrate 41 of light-emitting diode chip for backlight unit 4 is a transparency carrier, first and second conductive layer 34,352 can be metal level or transparency conducting layer, and first electrode 36 on the light-emitting diode chip for backlight unit 4 and second electrode 37 electrically connect by contact mat (contact pad) 43 electrodes on projection (bump) 42 and the adhesion substrate (Sub-mount) 44 in the flip-chip mode.All the other elements are all identical, not in addition for giving unnecessary details.
Figure 10 A and Figure 10 B are the profile of other aspects of light-emitting diode chip for backlight unit of the present invention.This light-emitting diode chip for backlight unit 5 comprises a substrate 51, extension lamination 33, first conductive layer 34, at least one current distribution layer 35 and second electrode 37 in regular turn, this light-emitting diode chip for backlight unit 5 is that with the foregoing description difference light-emitting diode chip for backlight unit 5 is the vertical LED chip, substrate 51 is an electrically-conductive backing plate, can be metal substrate, possess the function of the reflector and first electrode simultaneously.Extension lamination 33 comprises that second semiconductor layer 333, active layer 332 and first semiconductor layer 331 are formed on the substrate 51 in regular turn, second semiconductor layer 333 is the p type semiconductor layer, first semiconductor layer 331 is the n type semiconductor layer, and first and second conductive layer 34,352 can be transparency conducting layer.Light-emitting diode chip for backlight unit 51 comprises that also at least one second electrode 37 is formed on the current distribution layer 35, and second electrode 37 comprises at least one weld part, can not comprise extension.All the other elements are all identical, not in addition for giving unnecessary details.
Shown in Figure 10 B, this light-emitting diode chip for backlight unit 5 ' comprises a substrate 51, current distribution layer 35, first conductive layer 34, extension lamination 33 and second electrode 37, light-emitting diode chip for backlight unit 5 differences of light-emitting diode chip for backlight unit 5 ' and Figure 10 A are extension lamination 33 and form first conductive layer 34 on it in regular turn and after at least one current distribution layer 35 is formed on an epitaxial substrate, the transposition that stands upside down again is formed on the substrate 51, and second electrode 37 is formed on the extension lamination 33 then.First and second conductive layer 34,352 can be metal level or transparency conducting layer.All the other elements are all identical, not in addition for giving unnecessary details.
In sum, light-emitting diode chip for backlight unit provided by the invention, by being formed on first conductive layer and at least one current distribution layer on the extension lamination in regular turn, make electric current be evenly distributed on active layer, make light-emitting diode chip for backlight unit luminous evenly, and improve luminous efficiency, reduce the intensity of heat simultaneously, prolong the life-span of light-emitting diode chip for backlight unit, and can reduce the area of second electrode, increase luminous zone.By increasing the pattern density of patterning impedance layer, can more promote the uniformity of light-emitting diode chip for backlight unit current density at second electrode.
The above only is an illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the appended claim its equivalent modifications of carrying out or change.
Claims (25)
1, a kind of light-emitting diode chip for backlight unit comprises:
One extension lamination;
One first conductive layer is formed on the side of this extension lamination; And
At least one current distribution layer is formed on a side of this first conductive layer, and wherein this current distribution layer comprises a patterning impedance layer and second conductive layer.
2, light-emitting diode chip for backlight unit as claimed in claim 1, wherein this extension lamination comprises one first semiconductor layer, an active layer and one second semiconductor layer.
3, light-emitting diode chip for backlight unit as claimed in claim 2, wherein this first semiconductor layer is the n type semiconductor layer, this second semiconductor layer is the p type semiconductor layer.
4, light-emitting diode chip for backlight unit as claimed in claim 2, wherein this first semiconductor layer is n-GaN, n-AlGaN, n-GaAs or n-GaP, this second semiconductor layer is p-GaN, p-AlGaN, p-GaAs or p-GaP.
5, light-emitting diode chip for backlight unit as claimed in claim 2, wherein these active series of strata are respectively one layer or more energy gap layer, multi-quantum pit structure or single quantum well structure.
6, light-emitting diode chip for backlight unit as claimed in claim 2, wherein this active layer is InGaN (InGaN), gallium nitride (GaN), indium gallium nitride (GaInN), aluminium gallium nitride alloy (AlGaN), indium nitride (InN), nitrogenize aluminium nitride (AlN), zinc selenide (ZnSe), the InGaN (InGaN:Zn) of mixing zinc, AlGaInP (AlInGaP) or gallium phosphide (GaP).
7, light-emitting diode chip for backlight unit as claimed in claim 1, wherein this first or this second conductive layer be indium tin oxide (ITO), zinc oxide (ZnO), aluminium zinc oxide (AZO), antimony-doped stannic oxide (ATO), tin ash (SnO
2).
8, light-emitting diode chip for backlight unit as claimed in claim 1, wherein this first or the material of this second conductive layer be identical or inequality.
9, light-emitting diode chip for backlight unit as claimed in claim 1, wherein this patterning impedance layer is the material that is electrically insulated, low electrical conductivity material or transparent dielectric layer.
10, light-emitting diode chip for backlight unit as claimed in claim 9, wherein the material of this patterning impedance layer is silica (SiO
2) or niobium pentaoxide (Nb
2O
5).
11, as claim 1 or 9 described light-emitting diode chip for backlight unit, wherein this patterning impedance layer is the arrangement of a plurality of triangles, quadrangle, hexagon, octagon, circle, ellipse or its combination, perhaps, this patterning impedance layer has a plurality of holes and is a plurality of triangles, quadrangle, hexagon, octagon, circle, ellipse or its combination.
12, light-emitting diode chip for backlight unit as claimed in claim 1, wherein the electrical conductivity of this patterning impedance layer less than this first or the electrical conductivity of this second conductive layer, and the refractive index of this patterning impedance layer near or equal this first or the refractive index of this second conductive layer.
13, light-emitting diode chip for backlight unit as claimed in claim 1, wherein this light-emitting diode chip for backlight unit also comprises this current distribution layer of multilayer, this patterning impedance layer becomes staggered with adjacent this patterning impedance layer, and the length of this patterning impedance layer of forming of back is greater than the length of this patterning impedance layer that forms earlier.
14, light-emitting diode chip for backlight unit as claimed in claim 2, it also comprises at least one first electrode and at least one second electrode, and this first electrode is formed on this first semiconductor layer that exposes to the open air, and this second electrode is formed on this current distribution layer.
15, light-emitting diode chip for backlight unit as claimed in claim 14, wherein this first electrode comprises at least one first weld part and extends at least one extension from this first weld part, this second electrode comprises at least one second weld part, and this first weld part and this second weld part are in order to electrically connect with the external world.
16, light-emitting diode chip for backlight unit as claimed in claim 14, wherein this first and this second electrode be arranged on the neighboring area of this light-emitting diode chip for backlight unit; Perhaps, this first electrode is arranged on the central area of this light-emitting diode chip for backlight unit, and this second electrode is arranged on the neighboring area of this light-emitting diode chip for backlight unit; Perhaps, this first electrode is arranged on the neighboring area of this light-emitting diode chip for backlight unit, and this second electrode is arranged on the central area of this light-emitting diode chip for backlight unit.
17, as arbitrary described light-emitting diode chip for backlight unit in the claim 14 to 16, wherein the unit are pattern covers rate of close this second electrode of this patterning impedance layer is higher than the unit are pattern covers rate away from this second electrode.
18, light-emitting diode chip for backlight unit as claimed in claim 1 comprises that also a substrate and is formed on the resilient coating on this substrate, and this extension lamination is formed on this resilient coating.
19, light-emitting diode chip for backlight unit as claimed in claim 18, wherein this light-emitting diode chip for backlight unit is a upside-down mounting chip light-emitting diode chip for backlight unit, this substrate is a transparency carrier, and this first electrode on this light-emitting diode chip for backlight unit and this second electrode electrically connect by the contact mat on a projection and the adhesion substrate in the flip-chip mode.
20, as claim 18 or 19 described light-emitting diode chip for backlight unit, wherein the material of this substrate is sapphire, carborundum, silicon, MgAl
2O
4Or alloy, this resilient coating is an individual layer material or a multilayer material.
21, light-emitting diode chip for backlight unit as claimed in claim 1, wherein this light-emitting diode chip for backlight unit is the vertical LED chip, it also comprises a substrate and at least one electrode, and this extension lamination is formed on this substrate, and this electrode is formed on this current distribution layer.
22, light-emitting diode chip for backlight unit as claimed in claim 21, wherein this electrode comprises at least one weld part.
23, light-emitting diode chip for backlight unit as claimed in claim 1, it also comprises a substrate and at least one electrode, wherein this extension lamination, this first conductive layer and this at least one current distribution layer are formed on the epitaxial substrate, the transposition that stands upside down again is formed on this substrate, and this electrode is formed on this extension lamination.
24, as claim 21 or 23 described light-emitting diode chip for backlight unit, wherein this substrate is electrically-conductive backing plate or metal substrate, possesses the function of reflector and electrode simultaneously.
25, as arbitrary described light-emitting diode chip for backlight unit in the claim 1 to 6,19,21 to 23, wherein this first and this second conductive layer be metal level or transparency conducting layer.
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| CN200810161796A CN101685841A (en) | 2008-09-26 | 2008-09-26 | Light emitting diode chip |
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|---|---|---|---|
| CN200810161796A CN101685841A (en) | 2008-09-26 | 2008-09-26 | Light emitting diode chip |
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|---|---|
| CN101685841A true CN101685841A (en) | 2010-03-31 |
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| WO2011143861A1 (en) * | 2010-05-16 | 2011-11-24 | Tpk Touch Solutions (Xiamen) Inc. | Capacitive touch panel and method for reducing visibility of metal conductors in the same |
| CN102569580A (en) * | 2010-12-31 | 2012-07-11 | 新世纪光电股份有限公司 | Light emitting diode structure |
| CN102569580B (en) * | 2010-12-31 | 2015-06-24 | 新世纪光电股份有限公司 | Light emitting diode structure |
| CN102683556A (en) * | 2011-03-15 | 2012-09-19 | 王清华 | White-light-emitting diode with fluorescent layer |
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| WO2015165048A1 (en) * | 2014-04-29 | 2015-11-05 | 陈振贤 | Vertical led array element integrating led epitaxial structures with led package substrate |
| GB2540299B (en) * | 2014-04-29 | 2018-04-11 | Enraytek Optoelectronics Co | Vertical LED array element integrating LED epitaxial structures with LED package substrate |
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