TWI378574B - Light emitting diode chip - Google Patents

Description

1378574 101.05月09日楱正替换页6, invention description: [Technical Field] [0001] The present invention relates to a light-emitting diode wafer, in particular to a light-emitting diode wafer by a conductive The layer and the at least one current distribution layer are sequentially formed on the insect crystal layer to uniformly distribute the current in the active layer. [Prior Art]

[0002] High-power light-emitting diode chips (power LED) currently on the market

Chip) In terms of area efficiency, the high-power LED chip has a side length of more than 1000 " m, an area greater than 1 mm2, and the luminous efficiency is much smaller than that of a smaller wafer, such as 610//m, 381 era, so the LED chip is enlarged. Although the area can increase the rated current and wattage and brightness, but the relative heat dissipation is not easy to ask. The problem and low luminous efficiency.

1 is a cross-sectional view of a conventional light emitting diode chip. The light emitting diode wafer 1 includes a sapphire substrate 11 'buffer layer 12, a remote crystal layer 13, a transparent conductive layer 14, an n-type electrode 16, and a p-type electrode 17, wherein the epitaxial layer 13 includes n-type GaN Layer 131, active layer 132, and p-type GaN layer 133. The larger the area of the light-emitting diode wafer 1, the lower the luminous efficiency. As the wattage increases, the luminous efficiency decreases, and the increase in the area of the LED chip causes the temperature to concentrate and rise, which in turn causes the brightness and life of the LED to decrease. [0004] As shown in FIG. 1, because the material resistance value of the p-type GaN layer material is high, the larger the wafer area of the conventional type, the more uneven the distribution of the current 18 is, and the current density near the region of the p-type electrode 17 is still *retracted from ρ. The region current 18 of the type 17 has a low density. When the applied current 18 is higher and higher, a saturation phenomenon occurs in the high current density region of the near-n-type electrode 17 to cause a low luminous efficiency, and the extra current is converted into heat. The temperature will also rise, so the larger the area of the LED chip, 09713677 (^ single number A_ page 3 / 29 pages 1013174535-0 1378574 ' ____ 101 May 09 nuclear replacement page current distribution is more uneven, unit area The lower the efficiency, the unevener the temperature distribution and the more concentrated, so that flowing the current across the active layer 132 of the LED will help to increase its efficiency.

2 is a top view of another conventional light emitting diode wafer. The light-emitting diode chip 2 is different from the light-emitting diode wafer 1 in that the n-type electrode 26 and the p-type electrode 27 are finger-inserted electrodes each having a plurality of soldering portions 261 and 271 and a plurality of extending portions 262 and 272. The extension portion 262 of the n-type electrode 26 and the extension portion 272 of the p-type electrode 27 are parallel to each other and alternately arranged. The light-emitting diode chip 2 is formed to make the current more uniform through the active layer 132, and the n-type electrode 26 or the p-type electrode 27 are formed as complex finger-inserted electrodes. Fig. 3 is a graph showing the normalized current density value of the light-emitting diode wafer of Fig. 2 along the ΑΑ' line. According to the simulation analysis, at the current input of 700 mA, the maximum current density of the plane of the active layer 132 caused by the electrode pattern is 1.951×10 6 A/m 2 , and the minimum current density is 3.152 x 105 A/m 2 , and the maximum current density is about The standard deviation of the current density on this plane is 2.34x1 05A/m2. [0006] The more the p-type electrode pattern blocks the more light, the transparent conductive layer (IT0) can make the current distribution more uniform, but the current density is the highest near the p-type electrode, which still causes the current density to pass. High, the electro-optical conversion saturation phenomenon occurs in the active layer. At this time, the electro-optical conversion efficiency is lowered, and some currents cannot be converted into light output, and finally converted into heat, causing the temperature to rise. Furthermore, the complicated surface electrode pattern of the light-emitting diode chip is not easy to design, the yield is poor, and the production is not easy. The more surface electrodes (for example, p-type electrodes) and the larger the area, the more easily the light is blocked and the luminous efficiency is lowered. Multiple electrodes, each electrode needs to be marked with more than one gold wire or aluminum wire, into a 09713677 production order number A〇101 Page 4 / 29 pages 1013174535-0 1378574 101 May 09 nuclear positive @^页本Higher. The complicated surface electrode pattern and the plurality of wire-bonding electrodes are liable to cause complicated circuits, and more lines are used, the used circuit boards are also increased, and the cost is also increased. SUMMARY OF THE INVENTION [0007] In view of the above problems, an object of the present invention is to provide a light-emitting diode wafer, which is sequentially formed on an epitaxial layer by a first conductive layer and at least one current distribution layer. It is evenly distributed in the active layer to make the light uniform, improve the efficiency, reduce the concentration of heat and prolong the life.

Another object of the present invention is to provide a light-emitting diode wafer, which is sequentially formed on an epitaxial layer by a first conductive layer and at least one current distribution layer, so that current is evenly distributed in the active layer, which can be reduced. The area of the P-type electrode increases the area of illumination. [0009] Another object of the present invention is to provide a light-emitting diode wafer, which can improve the uniformity of the current density of the light-emitting diode wafer by increasing the pattern coverage of the patterned resistive layer per unit area of the second electrode. .

[00103] A further object of the present invention is to provide a light emitting diode chip. When the light emitting diode chip includes a plurality of current distribution layers, the unpatterned portions of the patterned resistive layers are adjacent to the patterned resistive layer. Covered by the pattern, the uniformity of the current density of the light-emitting diode wafer can be improved. [0011] To achieve the above object, a light emitting diode wafer includes: an epitaxial layer; a first conductive layer formed on the epitaxial layer; and at least one current distribution layer formed on the first conductive layer The current distribution layer includes a patterned resistance layer and a second conductive layer sequentially formed on the first conductive layer such that the patterned resistance layer is interposed between the two conductive layers. 09713677Product No. A〇101 Page 5 of 29 Page 1013174535-0 1378574 ___, May 09, 2010 Nuclear Replacement Page [0012] When the LED array includes a plurality of current distribution layers, the patterned impedance The unpatterned portion of the layer is covered by the pattern of adjacent patterned resistive layers

[0013] The light emitting diode wafer further includes at least one first electrode formed on a portion of the exposed first semiconductor layer, and at least one second electrode formed on the current distribution layer. The first electrode includes at least one first soldering portion and the at least one extending portion extends from the first soldering portion, and the second electrode includes at least one second soldering portion. The pattern coverage of the patterned resistive layer near the second electrode is higher than the coverage per unit area away from the second electrode. [0014] According to the above description, the LED array of the present invention is formed by sequentially forming a first conductive layer and at least one current distribution layer on the epitaxial layer, so that the current is evenly distributed in the active layer. The light-emitting diode wafer emits light uniformly, and improves the light-emitting efficiency, reduces the concentration of heat, prolongs the life of the light-emitting diode wafer, and reduces the area of the second electrode and increases the area of light emission. By increasing the pattern coverage of the patterned resistive layer in the unit area of the second electrode, the uniformity of the current density of the light-emitting diode wafer can be further improved. [Embodiment] Hereinafter, a light-emitting diode wafer according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, in which the same reference numerals will be given. 4A and 4B are cross-sectional views showing two aspects of a light-emitting diode wafer of the present invention. The LED chip 3 includes a substrate 31, a buffer layer 32, an epitaxial layer 33, a first conductive layer 34, and at least one current distribution layer 35. The LED array 3 of FIG. 4A includes a current distribution layer 35. Fig. 4B illuminating 〇 9713677 (^单单 A0101 page 6 / 29 pages 1013174535-0 1378574 . _ May 09, 101 revised replacement page diode wafer 3' includes two current distribution layers 35, 35, ^ [00Π] The substrate 31 of the light-emitting diode chip 3 may be made of sapphire, silicon, tantalum carbide (SiC), or MgA1〇4 alloy.

The buffer layer 32 is formed on the substrate 31, which may be a single layer material or a multilayer material. The dummy layer stack 33 is formed on the buffer layer 32. The epitaxial layer stack 33 sequentially includes a first semiconductor layer 331, an active layer 332, and a second semiconductor layer 333. The first semiconductor layer 331 is an n-type semiconductor layer, and the second semiconductor layer 333 is a p-type semiconductor layer. The first semiconductor layer 331 may be n_GaN, n-AlGaN 'n-GaAs or n-GaP, and the second semiconductor layer 333 may be p-GaN, p-AlGaN, p-GaAs or p-GaP, active layer 332 is one or more energy gap layers, multiple quantum well structure (MQ) structures or single quantum well structures (Single Quantum Well, SQW) ) 'The material can be indium gallium nitride (InGaN), gallium nitride (GaN), gas ablation (G a 11 iumindiumnitride, G a I η N), aluminum gallium nitride ( Aluminum gallium nitride, AlGaN), indium nitride (InN), aluminum nitride nitride (AIN), Zinc selenide (ZnSe), Zinc doped Indium gallium nitride (InGaN: Zn) ), aluminium gallium indium phosphide (AlInGaP) or gallium phosphide (GaP). The first conductive layer 34 of the light-emitting diode wafer 3 is formed on the epitaxial layer 33, and the current distribution layer 35 is formed on the first conductive layer 34. The current distribution layer 35 includes a patterned resistive layer 351 and a second conductive layer 352 sequentially formed on the first conductive layer 34 for uniformly distributing current to uniformly illuminate the active layer 332. The first 09713677 (f. single number A0101 page 7 / 29 pages 1013174535-0 1378574 and the second conductive layer 34, 352 is a transparent conductive layer, the material of which can be a tin oxide (ΙΤ0), zinc oxide (ZnO) , aluminum zinc oxide (azo), antimony doped tin oxide (Antimony Doped Tin Oxide, ΑΤ 0), tin dioxide (Sn 〇 2). The first and second conductive layers can be the same or different materials, patterned impedance The layer 3 51 is an electrically insulating material or a low conductivity material, such as a transparent dielectric layer, and the material thereof may be yttrium oxide (Si〇2) or bismuth pentoxide (Nb2〇5), and the pattern of the patterned resistive layer 351 Can be a plurality of quadrangles (as shown in Figure 5A), triangles (Figure 5B), hexagons (Figure 5C), octagons (Figure 5D), circles (Figure 5E), oval (Figure 51 〇 or a combination thereof, but not limited thereto. Further, the patterned resistance layer 351 may also be a dielectric layer having a plurality of holes, which may be a plurality of triangles, quadrangles (as shown in FIG. 5G), and hexagons. , octagonal, circular, elliptical or a combination thereof. Further, the conductive coefficient of the patterned resistive layer 351 is smaller than the first or second conductive The conductivity of the layers 34, 352 is sufficient, and its refractive index is close to or equal to the refractive index of the first or second conductive layers 34, 352. [0018] May 09, 101 " In addition, when at least one current distribution layer When 35 is a plurality of layers of current-dividing layers, as shown in FIG. 4B, in the plan view direction of the self-luminous diode chip 3, the unpatterned portion of the patterned resistive layer 351 is an adjacent patterned resistive layer 351. Covered, in other words, the patterned resistive layers 351, 351 are arranged in a staggered arrangement, and the length of the patterned resistive layer 351' is greater than the length of the patterned resistive layer 351. For example, if the pattern of the patterned resistive layer 351 includes a plurality a quadrangular shape (as shown in FIG. 5B), the pattern of the adjacent patterned resistive layer 351 may be a dielectric layer having a plurality of quadrangular holes as shown in FIG. 5G. At this time, the current density is via the patterned resistive layer 351. The pattern-free region is patterned by the patterned impedance layer 351 to redistribute the current density again, 〇_77 (P No. A 〇 101 Page 8 / Total 29 pages 1013174535-0 1378574 . . ___ 101 years 〇 ij~^9 The daily correction #^ page makes the current density distribution more uniform. [001 9A' 4B and 6A, the LED chip 3 further includes at least a first electrode 36 and at least a second electrode 37, wherein the first electrode 36 is formed on the exposed portion of the first semiconductor layer The second electrode 37 is formed on the current distribution layer 35. In the present embodiment, the first electrode 36&n-type electrode is formed on the exposed portion of the n-type semiconductor layer 331, and the second electrode is of the 卩 type. An electrode is formed on the current distribution layer 35, wherein the first electrode 36 includes at least one soldering portion 361 and at least one extending portion 362 extends from the soldering portion 361, and the second electrode 37 includes at least one soldering portion, which can be soldered without an extension. The portion 361 and the second electrode 37 are electrically connected to the outside, and the extension portion 362 of the first electrode can make the current more evenly distributed. Further, the second electrode 37 is formed on the current dispersion layer 35, and the current distribution layer 35 and the first conductive layer 34 have a function of dispersing current, so that the second electrode 37 may have no extension. The first and second electrodes 36, 37 are disposed in a peripheral region of the light-emitting diode wafer 3, as shown in Fig. 6A. Alternatively, the first electrode 36 is disposed in a central region of the light-emitting diode wafer 3, and the second electrode 37 is disposed in a peripheral region of the light-emitting diode wafer 3 as shown. Or the 'electrode 36' is disposed in the peripheral region of the light-emitting diode wafer 3, and the second electrode 37 is disposed in the central region of the light-emitting diode wafer 3 as shown in Fig. 6c. As shown in FIG. 7, the patterned impedance layer 351 is closer to the second electrode (10), and the unit area pattern coverage is higher than the unit area pattern coverage away from the second electrode 37, so that the patterned impedance close to the second electrode 37 can be obtained. The layer 351 has a higher impedance per unit area, and the patterned impedance 13 51 away from the second electrode 37 has a lower impedance per unit area, making the current distribution more uniform. 09713677(Γ^^ A〇l〇l Page 9 of 29 1013174535-0 1378574 ._, May 09, 2011 Pressing positively [0022] Therefore, current from the second electrode (eg p-type electrode) When flowing through the current distribution layer, it is uniformly blocked by the at least one patterned resistance layer and distributed to the first conductive layer, and then reaches the active layer via the second semiconductor layer (for example, a P-type semiconductor layer), and finally passes through the first semiconductor layer (for example, η The semiconductor layer is transferred to the first electrode (for example, an n-type electrode) to make the current of the active layer relatively uniform.

8 is a simulated dimensionless current density value of the light-emitting diode wafer of FIG. 6 along the ΒΒ' line. According to the simulation analysis, at the current input of 70OmA, the maximum current density of the plane of the active layer 332 caused by the electrode pattern is 1.185xl06 A/m2, and the minimum current density is 6. 9xl05 A/m2, and the maximum current density is about Lxl 05 A/米2。 The minimum current density value of 1.7 times, and the standard deviation of the current density on this plane is 1. lxl 05 A / m2. Therefore, compared to Fig. 2, the present invention is significantly improved regardless of the ratio of the maximum current density value to the minimum current density value and the standard deviation. 9 is a cross-sectional view showing another light emitting diode wafer of the present invention. The LED wafer 4 includes a substrate 41, a buffer layer 32, an epitaxial layer 33, a first conductive layer 34, at least one current distribution layer 35, a first electrode 36, and a second electrode 37. The diode chip 4 is different from the above embodiment in that the LED chip 4 is a flip-chip diode chip, and the substrate 41 of the LED chip 4 is a transparent substrate, and the first and second conductive layers 34 are provided. The 352 may be a metal layer or a transparent conductive layer. The first electrode 36 and the second electrode 37 on the LED substrate 4 are flip-chip-coated by a bump 42 and a sub-mount 44. The contact pad 43 electrode is electrically connected. The rest of the components are the same and will not be described again. 10A and 10B are cross-sectional views showing other aspects of the light emitting diode chip of the present invention. The light-emitting diode wafer 5 includes a substrate 51 and an epitaxial stack in sequence. 0971367^Single number deletion 1 Page 10/29 pages 1013174535-0 1378574 May 09, 2007 Shuttle replacement page

33. The first conductive layer 34, the at least one current distribution layer 35, and the second electrode 37. The light emitting diode chip 5 is different from the above embodiment in that the light emitting diode chip 5 is a vertical light emitting diode chip. The substrate 51 is a conductive substrate, which may be a metal substrate, and has a function of a reflective layer and a first electrode. The epitaxial layer stack 33 includes a second semiconductor layer 333, an active layer 332, and a first semiconductor layer 331 sequentially formed on the substrate 51, the second semiconductor layer 333 is a p-type semiconductor layer, and the first semiconductor layer 331 is an n-type semiconductor layer. The first and second conductive layers 34, 352 can be transparent conductive layers. The light emitting diode chip 51 further includes at least one second electrode 37 formed on the current distribution layer 35, and the second electrode 37 includes at least one soldering portion, which may not include the extending portion. The remaining components are the same and will not be described again. As shown in FIG. 10A, the LED chip 5' includes a substrate 51, a current distribution layer 35, a first conductive layer 34, an epitaxial layer 33, and a second electrode 37. The LED array 5 is printed. The difference from the light-emitting diode wafer 5 of FIG. 10 is that the stray crystal layer 33 and the first conductive layer 34 and the at least one current distribution layer 35 formed thereon are formed on a stray substrate, and then inverted. Transfer

The substrate is formed on the substrate 51, and then the second electrode 37 is formed on the epitaxial laminate 33. The first and second conductive layers 34, 352 can be a metal layer or a transparent conductive layer. The rest of the components are the same and will not be described again. [0027] In summary, the present invention provides a light-emitting diode wafer in which a first conductive layer and at least one current distribution layer are sequentially formed on an epitaxial layer to uniformly distribute current in the active layer. The light-emitting diode wafer emits light uniformly, and improves the light-emitting efficiency, reduces the concentration of heat, prolongs the life of the light-emitting diode wafer, and reduces the area of the second electrode and increases the area of light emission. By increasing the patterning resistance layer in the pattern of the second electrode 097 leg 7 (Ρ Α _ _ 11 / 29 pages 1013174535-0 1378574 101 May 01 shuttle is replacing the page degree, can further enhance the light dipole The uniformity of the current density of the bulk wafer. [0028] The above description is intended to be illustrative only and not limiting, and any equivalent modifications or alterations of the invention should be included without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0029] Figure 1 is a cross-sectional view of a conventional light-emitting diode wafer device. [0030] Figure 2 is another conventional light-emitting diode device [0031] FIG. 3 is a simulated dimensionless current density value of the LED chip of FIG. 2 along the AA' line segment. [0032] FIGS. 4A and 4B are two LED chips of the present invention. 5A to 5G are top views of the patterned resistive layer of the present invention. [0034] FIGS. 6A to 6C are top views of the light emitting diode wafer of the present invention, showing light emission The relative positions of the first and second electrodes of the diode wafer. [0035] FIG. 7 is FIG. 4A FIG. 8 is a simulated dimensionless current density value of the light-emitting diode wafer of FIG. 6B along the BB' line segment. [0037] FIG. 9 is a cross-sectional view of another embodiment of the light-emitting diode wafer of the present invention. [0038] FIG. 10A and FIG. 10B are cross-sectional views showing other aspects of the light-emitting diode wafer of the present invention. [Description of Main Components] 1013174535 -0

Page 12/29 Page 1387857 Modified on May 09, 2011 Correction Replacement Page [0039] 1, 2, 3, 3', 4, 5: LED Diode Wafers 11, 31, 41, 51: Substrates 12, 32 : Buffer layer 13, 33. Insect crystal layer 131: n-type GaN layer 132, 332: active layer 133: p-type GaN layer 14: transparent conductive layer 16, 26: n-type electrode

17, 27: p-type electrode 18: current 261, 271 '361: soldering portion 262, 272, 362: extension portion 331: first semiconductor layer 333: second semiconductor layer 34: first conductive layer

35, 35': current distribution layer 351, 35: patterned resistance layer 352, 352': second conductive layer 36: first electrode 37: second electrode 42: bump 43: contact pad

Q 44 : Adhesive substrate Read production number No. 01 Page 13 of 29 1013174535-0

Claims (1)

/〇〇/4 VII. Patent application scope · A light-emitting diode wafer, comprising: a worm crystal layer; a first conductive layer formed on one side of the epitaxial layer; and a secluded flow distribution layer formed on One side of the first conductive layer, wherein the current distribution layer comprises a patterned impedance layer and a second conductive layer. The illuminating diode chip of claim 1, wherein the stupid BB stack comprises a first semiconductor layer, an active layer, and a second semiconductor layer. The light-emitting diode wafer according to claim 2, wherein the first semiconductor layer is an n-type semiconductor layer, and the second semiconductor layer is a p-type semiconductor layer. The illuminating diode chip according to claim 2, wherein the first semiconductor layer is n-GaN, n-AlGaN, n-GaAs or n-GaP, and the second semiconductor layer is p-GaN. p-AlGaN, p-GaAs or p-GaP. The illuminating diode chip according to claim 2, wherein the main The dynamic layer is one or more energy gap layers, multiple quantum well structures or a single quantum well structure. The illuminating diode chip according to claim 2, wherein the active layer is Indium gallium nitride (InGaN) galvanium nitride (GaN), gallium nitride indium nitride (Gallium indium nitride, GalnN), aluminum gallium nitride (AlGaN), indium nitride (InN), aluminum nitride nitride (AIN), zinc selenide (ZnSe), zinc-doped nitrogen Indium gallium (Zinc doped Indium 09713677 (^^^^ A0101 Page 14 of 29 1013174535-0 1378574 Modified on May 09, 101, replaces gallium nitride, InGaN: Zn), aluminum gallium phosphide (Aluminum gallium) Indium phosphide, AlInGaP) or gallium phosphide (GaP). The luminescent diode according to claim 1, wherein the first or second conductive layer is indium tin oxide (IT) 〇), zinc oxide (Zn〇), zinc oxide (ΑΖ0), tin dioxide (Ant i mony Doped Tin Oxide, ΑΤΟ), tin dioxide (SnO). 2 y The light-emitting diode wafer according to the first aspect of the invention, wherein the material of the first or sixth first conductive layer is the same or different. The illuminating diode chip of claim 1, wherein the patterned impedance layer is an electrically insulating material, a low conductivity material or a transparent dielectric layer. 10. The light-emitting diode chip according to claim 9, wherein the material of the patterned resistance layer is oxidized stone (si02) or bismuth pentoxide (Nb 0) 2 5 as claimed in the patent scope or The light-emitting diode chip of claim 9, wherein the meshed impedance layer is in the form of a plurality of triangles, quadrangles, hexagons, octagons, circles, ellipses or a combination thereof. 12 The light-emitting diode chip of claim i, wherein the patterned impedance layer has a plurality of holes. The light-emitting diode chip of claim 12, wherein the holes of the patterned impedance layer are in a plurality of triangles, quadrilateral hexagons, octagons, circles, ellipses or combinations thereof. . Such as the scope of patent application! The light-emitting diode chip, wherein the patterned resistive layer has a conductivity smaller than that of the first or second conductive layer, and the patterned resistive layer has a refractive index close to _367. A_ Page 15 / Total 29 pages - or the 1013174535-0 1101 05 force 09 correction replacement page I The refractive index of the second conductive layer. The illuminating diode chip of claim 1, wherein the illuminating diode further comprises a plurality of layers of the current distribution layer, the patterned resistive layer and the adjacent patterned impedance The layer is arranged in a staggered manner, and the length of the patterned resistive layer formed later is greater than the length of the patterned resistive layer formed first. The light emitting diode chip according to claim 2, further comprising at least one The first electrode and the at least one second electrode 'the first electrode are formed on the exposed first semiconductor layer'. The second electrode is formed on the current distribution layer. The illuminating diode chip of claim 16, wherein the first electrode comprises at least one first soldering portion and at least one extending portion extends from the first splicing portion: the second electrode includes at least a second welded portion. The illuminating diode chip according to claim 17, wherein the first soldering portion and the second soldering portion are electrically connected to the outside. The light-emitting diode chip of claim 16, wherein the first and second electrodes are disposed in a peripheral region of the light-emitting diode wafer. The illuminating diode chip according to claim 16, wherein the Φ-electrode is disposed in a central region of the illuminating diode chip, and the second electrode is disposed at a periphery of the illuminating diode chip. region. The light-emitting diode chip according to claim 16, wherein the first electrode is disposed in a peripheral region of the light-emitting diode wafer, and the second electrode is disposed at a center of the light-emitting diode wafer region. The light-emitting diode wafer according to any one of claims 16 to 21, wherein a pattern coverage of the patterned resistive layer near the second electrode is higher than a unit area away from the second electrode. Pattern coverage. 097U67#单单Α0101 Page 16/29 pages 1013174535-0 1378574. The light-emitting diode wafer according to claim 1, which further comprises a substrate. And a buffer layer formed on the substrate, the epitaxial layer being formed on the buffer layer. The light-emitting diode wafer according to claim 23, wherein the material of the substrate is sapphire, tantalum carbide, niobium, MgAl2〇4 or an alloy. The light-emitting diode wafer according to claim 23, wherein the buffer layer is a single layer material or a multilayer material. The light-emitting diode chip according to claim 23, wherein the light-emitting diode chip is a flip-chip light-emitting diode chip. The illuminating diode chip according to claim 23, wherein the substrate is a transparent substrate, and the first electrode and the second electrode on the illuminating diode wafer are flip-chip bonded by bumps It is electrically connected to a contact pad on a sub-mount. The light-emitting diode chip of claim 1, wherein the light-emitting diode chip is a vertical light-emitting diode chip. 29. The light-emitting diode chip of claim 1, further comprising A substrate and at least one electrode are formed on the substrate, and the electrode is formed on the current distribution layer. The light-emitting diode wafer of claim 28, wherein the electrode comprises at least one solder joint. The light emitting diode chip of claim 1, further comprising a substrate, wherein the roofing layer, the first conductive layer and the at least one current distribution layer are formed on a remote crystal substrate And the inverted polarizer is formed on the substrate. The light-emitting diode wafer according to claim 31, further comprising at least one electrode formed on the epitaxial layer. 1 (P number should be 01 1013174535-0 page 17 / 29 pages 1377574, _; May 09, 101 nuclear replacement page 33. The light-emitting diode chip according to claim 29 or 31 The substrate is a conductive substrate or a metal substrate, and has a function of a reflective layer and an electrode. The light-emitting diode chip according to any one of claims 1 to 6 to 26 to 32, wherein The first and the second conductive layer are a metal layer or a transparent conductive layer. _3677 (P number hall 01 page 18 / 29 pages 1013174535-0