CN102569580A - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
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- CN102569580A CN102569580A CN2011104387185A CN201110438718A CN102569580A CN 102569580 A CN102569580 A CN 102569580A CN 2011104387185 A CN2011104387185 A CN 2011104387185A CN 201110438718 A CN201110438718 A CN 201110438718A CN 102569580 A CN102569580 A CN 102569580A
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- emitting diode
- metal electrode
- semiconductor layer
- light emitting
- light
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000007639 printing Methods 0.000 claims description 55
- 238000010276 construction Methods 0.000 claims description 36
- 238000009413 insulation Methods 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000008645 Chenopodium bonus henricus Nutrition 0.000 description 1
- 244000138502 Chenopodium bonus henricus Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a light-emitting diode structure, which comprises a substrate, a first semiconductor layer, a first metal electrode, a second semiconductor layer, a conducting layer, a second metal electrode and at least one light-transmitting conductive extension piece. The transparent conductive extension piece can reduce the condition that light emitted by the light-emitting diode is shielded or absorbed, and can also uniformly distribute current, thereby improving the light-emitting efficiency of the light-emitting diode.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, be meant a kind of light emitting diode construction that improves luminous efficiency especially.
Background technology
Light source is indispensable among the human lives, along with the development of technology, have better illumination and more the illuminations of power saving also arise at the historic moment gradually.The lighting source that the most often uses at present as light-emitting diode (Light-Emitting Diode, LED).Light-emitting diode is a kind of solid-state semiconductor element, utilizes electric current to mutually combine through two kinds of carriers that produce in the diode, and the form of energy with light discharged.Light-emitting diode has that volume is little, power saving, luminous efficiency is good, the life-span is long, and operant response speed fast; And advantages such as pollution with noxious substances such as non-thermal radiation and mercurys; Therefore extensively be applied to each generic category; Especially advocating the advocating under the demand of " carbon reduction ", the power saving superiority of light-emitting diode just begins to come into one's own.In fossil energy shortage and environmental consciousness surging today day by day, kind has been all circles' focuses deeply concerned with light-emitting diode.
See also Fig. 1, it is the light-emitting diode structure sketch map of prior art; As shown in the figure; Existing light-emitting diode comprises a substrate 12; One first semiconductor layer 14, one second semiconductor layer 16 and a conductive layer 18; First semiconductor layer 14 is located at substrate 12 tops, and second semiconductor layer 16 is located at first semiconductor layer, 14 tops, and conductive layer 18 is located at second semiconductor layer, 16 tops.
Existing one first metal electrode 22 and one second metal electrode 24 of more comprising; First metal electrode 22 is that first semiconductor layer 14 with the n type forms ohmic contact; To be connected to the negative pole of external power source; 24 conductive layers 18 with second semiconductor layer, 16 tops of p type of second metal electrode are connected, and second metal electrode 24 is connected to the positive pole of external power source.When first metal electrode 22 and the energising of second metal electrode 24, will produce a luminescent layer between first semiconductor layer 14 and second semiconductor layer 16 and luminous, and light will be exhaled by second semiconductor layer, 16 tops.Existing conductive layer 18 has characteristic transparent and conduction; Electric current in order to the outside supply evenly distributes; With the energy consumption of avoiding current concentration to produce, yet second metal electrode 24 of existing light-emitting diode is not the material of printing opacity; So it is second metal electrode 24 is absorption portion light, like this then can influence the luminous efficiency of light-emitting diode.
And in order to improve the luminous efficiency of light-emitting diode; So prior art more is provided with an insulating part 32; Insulating part 32 between the conductive layer 18 and second semiconductor layer 16, in order to cover second semiconductor layer 16 be positioned at second metal electrode 24 under the electric current that passed through, let second semiconductor layer, 16 other position institute galvanizations increase; Like this then can make second metal electrode 24 under luminous efficiency reduce, and promote the luminous efficiency of other positions.Again, existing in order more to promote luminous efficiency, therefore at least one conduction extension 42 conduction extensions 42 more are set are arranged at the top of conductive layer 18 and connect with second metal electrode 24.So can the electric current through second metal electrode 24 evenly be distributed through conduction extension 42, to promote luminous efficiency.
Yet conduction extension 42 also is not the material of printing opacity, therefore makes luminescent layer when luminous, because the setting of conduction extension 42 causes absorption light to make luminous efficiency reduce.And; Prior art more is provided with at least one insulation extension 34; Insulation extension 34 connects with insulating part 32; Insulation extension 34 is between conductive layer 18 and second semiconductor layer 16, and insulation extension 34 is positioned at and conducts electricity electrical insulation extension 34 that extension 42 passed through and also can absorb light and cause the reduction luminous efficiency in order to cover second semiconductor layer 16.
Therefore, the present invention provides a kind of light emitting diode construction, and it is not only to let electric current distribute uniformly, and can improve the luminous efficiency of light-emitting diode, to solve the above problems.
Summary of the invention
Main purpose of the present invention; Be to provide a kind of light emitting diode construction; It is through at least one printing opacity conduction extension, to be connected to conductive layer top, so can reduce the absorbed situation of light-emitting diode issued light line; Also can let electric current evenly distribute, and then improve the luminous efficiency of light-emitting diode.
Secondary objective of the present invention; Be to provide a kind of light emitting diode construction, it is in second semiconductor layer top one insulating part to be set, and insulating part then is positioned at the metal electrode below; Circulate by the metal electrode below to reduce electric current through insulating part; So reducing the light of metal electrode below, promoting other regional light, and then more improve the luminous efficiency of light-emitting diode.
Technical scheme of the present invention is: a kind of light emitting diode construction comprises:
One substrate;
One first semiconductor layer is located at this substrate top;
One first metal electrode is located at this first semiconductor layer top;
One second semiconductor layer is located at this first semiconductor layer top and adjacent with this first metal electrode;
One conductive layer is located at this second semiconductor layer top;
One second metal electrode is located at this conductive layer top; And
At least one printing opacity conduction extension is located at this conductive layer top and is connected with this second metal electrode.
Among the present invention, more comprise an insulating part, this insulating part is located at this second semiconductor layer top and relative with this second metal electrode.
Among the present invention, wherein the area of this insulating part is greater than the area of this second metal electrode.
Among the present invention, more comprise an insulation extension, this insulation extension is located at this second semiconductor layer top and is arranged in this insulating part, and this insulation extension is relative with this printing opacity conduction extension.
Among the present invention, the area of the extension that wherein should insulate is greater than the area of this printing opacity conduction extension.
Among the present invention, more comprise a reflecting element, this reflecting element is located at this insulating part below.
Among the present invention, more comprise a reflecting element, this reflecting element is located at this second metal electrode below.
Among the present invention, wherein the material of this printing opacity conduction extension is to be selected from one of them of nickel, gold, aluminium, silver, platinum, chromium, palladium, tin, zinc, titanium, lead, germanium, copper and above-mentioned group of combination in any.
Among the present invention, wherein this printing opacity conduction extension is located at this second metal electrode side.
Among the present invention, wherein this printing opacity conduction extension is located at this second metal electrode below.
Among the present invention, wherein this conductive layer is a transparency conducting layer.
Among the present invention, wherein the material of this transparency conducting layer is to be selected from the glutinous agent of nickel/gold, tin indium oxide, cadmium tin, antimony tin, electrically conducting transparent, zinc oxide, zinc oxide to be and one of them of above-mentioned group of combination in any.
The beneficial effect that the present invention has: light emitting diode construction of the present invention comprises a substrate, one first semiconductor layer, one first metal electrode, one second semiconductor layer, a conductive layer and one second metal electrode and at least one printing opacity conduction extension; First semiconductor layer is located at the substrate top; First metal electrode is located at first semiconductor layer top; Second semiconductor layer is located at first semiconductor layer top and adjacent with first metal electrode, and conductive layer is located at second semiconductor layer top, and second metal electrode is located at the conductive layer top; Printing opacity conduction extension is located at the conductive layer top and is connected with second metal electrode; The material of printing opacity conduction extension is an electric conducting material, and the light transmittance of this printing opacity conduction extension is greater than 10%, and better person is that light transmittance is greater than 30%.Can reduce the absorbed situation of light-emitting diode issued light line through printing opacity conduction extension, also can let electric current evenly distribute, and then improve the luminous efficiency of light-emitting diode.
In addition, light emitting diode construction of the present invention more comprises an insulating part, and insulating part is located at second semiconductor layer top and relative with second metal electrode.Can reduce electric current by the below circulation of second metal electrode through insulating part, reducing the light of second metal electrode below, and promote other regional light, and then more improve the luminous efficiency of light-emitting diode.
Description of drawings
Fig. 1 is the light-emitting diode structure sketch map of prior art;
Fig. 2 is the structural representation of the light emitting diode construction of preferred embodiment of the present invention;
Fig. 3 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 4 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 5 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention;
Fig. 6 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; And
Fig. 7 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention.
[figure number is to as directed]
12 substrates, 14 first semiconductor layers
16 second semiconductor layers, 18 conductive layers
22 first metal electrodes, 24 second metal electrodes
32 insulating parts, 34 insulation extensions
42 conduction extensions, 52 substrates
54 first semiconductor layers, 56 second semiconductor layers
58 conductive layers, 62 first metal electrodes
64 second metal electrodes, 72 printing opacities conduction extension
80 reflecting elements, 82 insulating parts
84 insulation extensions
Embodiment
For making architectural feature of the present invention and the effect reached there are further understanding and understanding, cooperate detailed explanation, explain as follows in order to preferred embodiment and accompanying drawing:
See also Fig. 2, it is the structural representation of the light emitting diode construction of preferred embodiment of the present invention; As shown in the figure; Light emitting diode construction of the present invention comprises a substrate 52, one first semiconductor layer 54, one first metal electrode 62, one second semiconductor layer 56, a conductive layer 58, one second metal electrode 64 and at least one printing opacity conduction extension 72; First semiconductor layer 54 is located at substrate 52 tops; First metal electrode 62 is located at first semiconductor layer, 54 tops, and second semiconductor layer 56 is located at first semiconductor layer, 54 tops and adjacent with first metal electrode 62, and conductive layer 58 is located at second semiconductor layer, 56 tops; Second metal electrode 64 is located at conductive layer 58 tops, and printing opacity conduction extension 72 is located at conductive layer 58 tops and is connected with second metal electrode 64.Can improve electric current through printing opacity conduction extension 72 and evenly distribute, and reduce the capture-effect of printing opacity conduction extension 72, and then improve the luminous efficiency of light-emitting diode.
Substrate 52 can be sapphire substrate, and sapphire substrate has electric insulating quality, and first semiconductor layer 54 is located at substrate 52 tops, and first semiconductor layer 54 can be n N-type semiconductor N compound layer, for example is gallium nitride or InGaN.Second semiconductor layer 56 is located at first semiconductor layer, 54 tops, and second semiconductor layer 56 can be p N-type semiconductor N compound layer, for example is gallium nitride or InGaN.Combine with second semiconductor layer 56 through first semiconductor layer 54; Make electronics electricity hole between n N-type semiconductor N compound layer and the p N-type semiconductor N compound layer right combine and luminous, make first semiconductor layer 54 luminous with second semiconductor layer, 56 formation one luminescent layers.
The material of printing opacity of the present invention conduction extension 72 is an electric conducting material, and electric conducting material is to be selected from one of them of nickel, gold, aluminium, silver, platinum, chromium, palladium, tin, zinc, titanium, lead, germanium, copper and above-mentioned group of combination in any.So can let conducting branch to printing opacity conduction extension 72 in the electric current of second metal electrode 64 through printing opacity conduction extension 72; Through printing opacity conduction extension 72 with conduction of current in second semiconductor layer 56; Can improve electric current and evenly distribute, and then improve the luminous efficiency uniformity of light-emitting diode.The light transmittance of printing opacity conduction extension is greater than 10%; Better person is that light transmittance is greater than 30%; And the thickness of printing opacity conduction extension 72 is less than
(dust meter), and better person is that thickness is less than
(dust meter).In addition; Printing opacity conduction extension 72 is located at conductive layer 58 tops and is connected with second metal electrode 64, and printing opacity conduction extension 72 is located at the side of second metal electrode 64, printing opacity conduction extension 72 printing opacities own; So when lumination of light emitting diode; Light can not conducted electricity extension 72 by printing opacity to be stopped, therefore can reduce the situation that light-emitting diode issued light line is covered by second metal electrode 64 through printing opacity conduction extension 72, so more can improve the luminous efficiency of light-emitting diode
See also Fig. 3, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment that this embodiment is different from Fig. 2 is that second metal electrode 64 is different with the set-up mode of printing opacity conduction extension 72.The printing opacity conduction extension 72 of Fig. 2 is to be located at conductive layer 58, and the printing opacity of Fig. 2 conduction extension 72 is connected with second metal electrode 64; And this embodiment conducts electricity extension 72 with printing opacity earlier and is arranged at the top of conductive layer 58; And second metal electrode 64 is arranged at the top of printing opacity conduction extension 72; Can improve the contact area of this second metal electrode 64 and this printing opacity conduction extension 72; Can let electric current evenly distribute, more can let second metal electrode 64 and printing opacity conduction extension 72 be convenient to be arranged at conductive layer 58.
See also Fig. 4, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment of this embodiment and Fig. 2 in comparison, this embodiment more comprises a reflecting element 80, reflecting element 80 is located at second metal electrode, 64 belows.Because second metal electrode 64 can absorb partly light, so embodiment is provided with reflecting element in second metal electrode, 64 belows, absorb partly light to avoid second metal electrode 64, so more promote the luminous efficiency of light-emitting diode.
See also Fig. 5, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment of this embodiment and Fig. 2 in comparison, this embodiment more comprises an insulating part 82, insulating part 82 is located at second semiconductor layer, 56 tops and relative with second metal electrode 64.The area of insulating part 82 can be greater than the area of second metal electrode 64; At least one length of side length of insulating part 82 is greater than the relative length of side length of second metal electrode 64 more than 1 micron, or total length of side length of insulating part 82 is greater than total length of side length of second metal electrode 64 more than 2 microns.So when second metal electrode, 64 conducting electric currents; Electric current will be by second metal electrode 64 toward 56 conduction of second semiconductor layer; And the insulating part 82 of this embodiment is between the conductive layer 58 and second semiconductor layer 56; In order to cover second semiconductor layer 56 be positioned at second metal electrode 64 under the electric current that passed through, let second semiconductor layer, 56 other position institute galvanizations increase.
Because second metal electrode 64 is not the material of printing opacity, therefore second metal electrode 64 can absorb light-emitting diode issued light line and influence luminous efficiency.Therefore if can make second metal electrode 64 under luminous efficiency reduce, with reduce current lead-through to the second metal electrode 64 under, with let second metal electrode 64 under outside luminous efficiency promote.This embodiment with the energy consumption of avoiding current concentration to produce, so more can promote the luminous efficiency uniformity of light emitting diode construction cooperating printing opacity conduction extension 72 can let electric current evenly distribute.
See also Fig. 6, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment of this embodiment and Fig. 5 in comparison, this embodiment more comprises an insulation extension 84, insulation extension 84 is located at second semiconductor layer, 56 tops and is arranged in insulating part 82, insulation extension 84 is relative with printing opacity conduction extension 72.The area of insulation extension 84 is greater than the area of printing opacity conduction extension 72.So when second metal electrode, 64 conducting electric currents, electric current will be by second metal electrode 64 toward 56 conduction of second semiconductor layer, and also electric current is by 72 shuntings of second metal electrode, 64 past meeting printing opacity conduction extensions.
This embodiment is except conducting electricity extension 72 to improve the luminous efficiency through insulating part 82 and printing opacity; This embodiment more is provided with insulation extension 84 in the below of printing opacity conduction extension 72; Through insulation extension 84 to reduce the crested of light-emitting diode issued light line, to let electric current evenly distribute.
See also Fig. 7, it is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure, the embodiment of this embodiment and Fig. 5 in comparison, this embodiment is provided with reflecting element 80, reflecting element 80 is located at the below of insulating part 82.So can the light of insulating part 82 belows be reflected, and then reduce insulating part 82 light-absorbing situations generations, so more can promote the luminous efficiency of light-emitting diode.
In sum; Light emitting diode construction of the present invention comprises a substrate, one first semiconductor layer, one first metal electrode, one second semiconductor layer, a conductive layer and one second metal electrode and at least one printing opacity conduction extension; First semiconductor layer is located at the substrate top, and first metal electrode is located at first semiconductor layer top, and second semiconductor layer is located at first semiconductor layer top; Conductive layer is located at second semiconductor layer top; Second metal electrode is located at the conductive layer top, and printing opacity conduction extension is located at the conductive layer top and is connected with second metal electrode, and the material of printing opacity conduction extension is an electric conducting material.Can reduce the situation of light-emitting diode issued light line crested through printing opacity conduction extension, also can let electric current evenly distribute, and then improve the luminous efficiency of light-emitting diode.
In sum; Be merely preferred embodiment of the present invention; Be not to be used for limiting the scope that the present invention implements, all equalizations of doing according to the described shape of claim scope of the present invention, structure, characteristic and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (12)
1. a light emitting diode construction is characterized in that, comprises:
One substrate;
One first semiconductor layer is located at this substrate top;
One first metal electrode is located at this first semiconductor layer top;
One second semiconductor layer is located at this first semiconductor layer top and adjacent with this first metal electrode;
One conductive layer is located at this second semiconductor layer top;
One second metal electrode is located at this conductive layer top; And
At least one printing opacity conduction extension is located at this conductive layer top and is connected with this second metal electrode.
2. light emitting diode construction as claimed in claim 1 is characterized in that, more comprises an insulating part, and this insulating part is located at this second semiconductor layer top and relative with this second metal electrode.
3. light emitting diode construction as claimed in claim 2 is characterized in that wherein the area of this insulating part is greater than the area of this second metal electrode.
4. light emitting diode construction as claimed in claim 2 is characterized in that, more comprises an insulation extension, and this insulation extension is located at this second semiconductor layer top and is arranged in this insulating part, and this insulation extension is relative with this printing opacity conduction extension.
5. light emitting diode construction as claimed in claim 4 is characterized in that, the area of the extension that wherein should insulate is greater than the area of this printing opacity conduction extension.
6. light emitting diode construction as claimed in claim 2 is characterized in that, more comprises a reflecting element, and this reflecting element is located at this insulating part below.
7. light emitting diode construction as claimed in claim 1 is characterized in that, more comprises a reflecting element, and this reflecting element is located at this second metal electrode below.
8. light emitting diode construction as claimed in claim 1 is characterized in that, wherein the material of this printing opacity conduction extension is to be selected from one of them of nickel, gold, aluminium, silver, platinum, chromium, palladium, tin, zinc, titanium, lead, germanium, copper and above-mentioned group of combination in any.
9. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this printing opacity conduction extension is located at this second metal electrode side.
10. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this printing opacity conduction extension is located at this second metal electrode below.
11. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this conductive layer is a transparency conducting layer.
12. light emitting diode construction as claimed in claim 11; It is characterized in that wherein the material of this transparency conducting layer is to be selected from the glutinous agent of nickel/gold, tin indium oxide, cadmium tin, antimony tin, electrically conducting transparent, zinc oxide, zinc oxide to be and one of them of above-mentioned group of combination in any.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510270591.9A CN104868032A (en) | 2010-12-31 | 2011-12-19 | Light emitting diode structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099147095A TW201228035A (en) | 2010-12-31 | 2010-12-31 | LED structure |
| TW099147095 | 2010-12-31 |
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| CN201510270591.9A Division CN104868032A (en) | 2010-12-31 | 2011-12-19 | Light emitting diode structure |
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| CN102569580A true CN102569580A (en) | 2012-07-11 |
| CN102569580B CN102569580B (en) | 2015-06-24 |
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| CN201510270591.9A Pending CN104868032A (en) | 2010-12-31 | 2011-12-19 | Light emitting diode structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796969A (en) * | 2014-09-01 | 2017-05-31 | 欧司朗光电半导体有限公司 | Opto-electronic semiconductor module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0697498A (en) * | 1992-09-17 | 1994-04-08 | Toshiba Corp | Semiconductor light emitting element |
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| US10355170B2 (en) | 2014-09-01 | 2019-07-16 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component |
| CN106796969B (en) * | 2014-09-01 | 2019-10-01 | 欧司朗光电半导体有限公司 | Opto-electronic semiconductor module |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201228035A (en) | 2012-07-01 |
| CN102569580B (en) | 2015-06-24 |
| TWI453956B (en) | 2014-09-21 |
| CN104868032A (en) | 2015-08-26 |
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