201228035 六、發明說明： 【發明所屬之技術領威】 [0001] 本發明係有關於一種發光二極體結構，特別是指一 種可提高發光效率之發光二極體結構。 【先前彳支術】 [0002] 光源為人類生活中不可或缺，隨著技術的發展，具 . 有更好照度及更省電的照明工具也遂漸應運而生。目前 - 最常使用的照明光源為發光二極體（Light-Emitting 0 Dlode，LED)。發光一極鱧係為一種固態之半導體元件 ’利用電流通過二極禮内產生之二種栽子相互結合，將 能量以光的形式釋放出來。發光二極趙具有趙積小、省 電、發光效率佳、壽命長、及操作反應速度俠，並且具 有無熱輕射與水銀等有毒物質的污染等優點，因此廣泛 被應用於各種範4，尤其在提倡「節能減碳」的宣導訴 求下’發光二極競的省電優越性便開始受到重視。在石 化能源曰漸短缺與環保意途高涨的今日，善用發光二極 體已經疋各界關切的焦點。 請參閱第一圖，其係為習知技術之發光二極體之結 構示意圖；如圖所示，習知的發光二極體包含一基板12 ，一第一半導體層14、一第二半導體層16與一導電層18 ，第一半導體層14設於基板12上方，第二半導體層16設 於第一半導體層14上方，導電層18設於第二半導體層16 上方。 習知更包含一第一金屬電極22與一第二金屬電極24 ，第一金屬電極22係與η型之第一半導體層14形成歐姆接 觸，以連接至外部電源的負極，第二金屬電極24則與ρ型 099147095 表單編號 Α0101 第 3 頁/共 21 頁 0992080910-0 201228035 的第二半導體層16上方之導電層18相連接，而第二金屬 電極24連接至外邹電源的正極。當第一金屬電極22與第 二金屬電極24通電時，第一半導體層14與第二半導體層 16之間將產生一發光層而發光’而光線將由第二半導體 層16上方發散出去。習知導電層18具有透明及導電的特 性’用以將外部供應的電流均勻分布，以避免電流集中 產生的能耗，然而，習知發光二極體的第二金屬電極24 並非透光之材質，故第二金屬電極24將吸收部分光線， 如此則會影響發光二極體的發光效率。 而為了提高發光二極體的發光效率，故此習知技術 更設置一絕緣件32，絕緣件3f位於導電層18與第二半導 體層16之間’用以遮蔽第二半導體層16位於第二金屬電 極24之正下方所通過之電流，讓第二半導體層16其他位 置所通電流增加，如此則會使第二金屬電極24之正下方 的發光效率降低，而提升其他位置之發光效率。又’習 知為了更提升發光效率，因此更設置至少一導電延伸件 42，導電延伸件42設置於導電層18之上方並與第二金屬 電極24相接設。如此可將通過第二金屬電極24之電流藉 由導電延伸件42而均勻分布，以提升發光效率。 然而’導電延伸件42亦並非透光之材質，因此使發 光層於發光時，由於導電延伸件42之設置造成吸收光線 使得發光效率降低。且，習知技術更設置至少/絕緣延 伸件34 ’絕緣延伸件34與絕緣件32相接設，絕緣延伸件 34位於導電層18與第二半導體層16之間，絕緣延伸件34 用以遮蔽第二半導體層16位於導電延伸件42所通過之電 流，絕緣延伸件34亦會吸收光線造成降低發光蛛率。 099147095 表單編號A0101 第4頁/共21頁 0992080910-0 201228035 因此，本發明提供一種發光二極體結構，其係不但 可讓電流均勻的分佈，並且可提高發光二極體的發光效 率，以解決上述之問題。 【發明内容】 [0003] Ο ο 099147095 本發明之主要目的，在於提供一種發光二極體結構 ，其係藉由至少一透光導電延伸件，以接於一導電層上 方，如此可減少發光二極體所發之光線被吸收之情形， 亦可讓電流均勻分布，進而提高發光二極體之發光效率 Ο 本發明之次要目的，在於提供一種發光二極體結構 ，其係於第二半導體層上方設置一絕緣件，絕緣件則位 於金屬電極下方，藉由絕緣件以減少電流由金屬電極下 方流通，如此以減少金屬電極下方之光線，以提升其他 區域之光線，進而更提高發光二極體之發光效率。 本發明之發光二極體結構包含一基板、一第一半導 體層、一第一金屬電極、一第二半導體層、一導電層與 一第二金屬電極與至少一透光導電延伸件，第一半導體 層設於基板上方，第一金屬電極設於第一半導體層上方 ，第二半導體層設於第一半導體層上方並與第一金屬電 極相鄰，導電層設於第二半導體層上方，第二金屬電極 設於導電層上方，透光導電延伸件設於導電層上方並與 第二金屬電極相接設，透光導電延伸件之材料為一導電 材料，且該透光導電延伸件的透光度大於10%，更佳者為 透光度大於30%。藉由透光導電延伸件可減少發光二極體 所發之光線被吸收之情形，亦可讓電流均勻分布，進而 提高發光二極體之發光效率。 表單編號Α0101 第5頁/共21頁 0992080910-0 201228035 另外，本發明之發光二極體結構更包含一絕緣件， 絕緣件設於第二半導體層上方並與第二金屬電極相對。 藉由絕緣件可減少電流由第二金屬電極下方流通，以減 少第二金屬電極下方之光線，並提升其他區域之光線， 進而更提高發光二極體之發光效率。 【實施方式】 [0004] 茲為使貴審查委員對本發明之結構特徵及所達成 之功效有更進一步之瞭解與認識，謹佐以較佳之實施例 及配合詳細之說明，說明如後： 請參閱第二圖，其係為本發明較佳實施例之發光二 極體結構之結構示意圖；如圖所示，本發明之發光二極 體結構包含一基板52、一第一半導體層54、一第一金屬 電極62、一第二半導體層56、一導電層58、一第二金屬 電極64與至少一透光導電延伸件72,第一半導體層54設 於基板52上方，第一金屬電極62設於第一半導體層54上 方，第二半導體層56設於第一半導體層54上方並與第一 金屬電極62相鄰，導電層58設於第二半導體層56上方， 第二金屬電極64設於導電層58上方，透光導電延伸件72 設於導電層58上方並與第二金屬電極64相接設。藉由透 光導電延伸件72可提高電流均勻分布，並降低透光導電 延伸件72之遮蔽效應，進而提高發光二極體之發光效率 〇 基板52可為藍寶石基板，藍寶石基板具有電氣絕緣 性，第一半導體層54設於基板52上方，第一半導體層54 可為η型半導體化合物層，例如為氮化鎵或氮化銦鎵。第 二半導體層56設於第一半導體層54上方，第二半導體層 099147095 表單編號Α0101 第6頁/共21頁 0992080910-0 M可為p型半導體化合物層，例如為氮化鎵或氮化鋼錄。 藉由第一半導體層54與第二半導體層56相結合，使η型半 導體化合物層與Ρ型半導體化合物層之間的電子電洞對之 結合而發光，使第—半導體層54與第二半導體層“形^ 一發光層而發光。 導電層58為-透明導電層，導電層之材料係選自於 鎳:金、氧化銦錫、氧化鎘錫、氡化銻錫、透明導電黏劑 、氧化鋅、氧化鋅系及上述組任意組合之其中之一者。 導電層58以氧化銦錫為例，氧化銦錫具有透明及導電的 特性，因此適合作為第二金屬電極64與第二半導體層Μ 之間連接。導電層58用以將外部供應的電流均勻分布， 以避免電流集中產生的能耗。第一金屬電極62係與η型第 一半導體層54形成歐姆接觸，作為η型的接觸層以連接至 外部電源之一負極，第二金屬電極64連接與ρ型第二半導 體層56並與接上外部電源之一正極。 本發明之透光導電延伸件72!之翁料為導電材料，導 電材料係選自錄、金、銘、銀、始、路、把、錫、辞、 鈦、鉛、鍺、銅及上述組任意組合之其中之一者。故藉 由透光導電延伸件72可讓導通於第二金屬電極64之電流 分流至透光導電延伸件72，在藉由透光導電延伸件72以 將電流傳導於第二半導體層56，可提高電流均勻分布， 進而提尚發光二極體之發光效率均勻性。透光導電延伸 件的透光度大於10%，更佳者為透光度大於3〇%，且透光 導電延伸件72的厚度小於5〇〇 埃公尺），更佳者為厚 度小於300 Α(埃公尺）。另外，透光導電延伸件72設於 導電層58上方並與第二金屬電極64相接設，透光導電延 0992080910-0 表單编號Α010Ι 第7頁/共2】頁 201228035 伸件72設於第二金屬電極64之侧邊，透光導電延伸件72 本身透光，故當發光二極體發光時，光線不會被透光導 電延伸件72所阻擋，因此藉由透光導電延伸件72可減少 發光二極體所發之光線被第二金屬電極64所遮蔽之情形 ，如此更可提高發光二極體之發光效率 請參閱第三圖，其係為本發明另一較佳實施例之發 光二極體結構之結構示意圖；如圖所示，此實施例不同 於第二圖之實施例在於第二金屬電極64與透光導電延伸 件72的設置方式不同。第二圖之透光導電延伸件72係設 於導電層58，且第二圖之透光導電延伸件72與第二金屬 電極64相連接；而此實施例先將透光導電延伸件72設置 於導電層58之上方，並且將第二金屬電極64設置於透光 導電延伸件72之上方，可提高該第二金屬電極64與該透 光導電延伸件72之接觸面積，可讓電流均勻分布，更可 讓第二金屬電極64與透光導電延伸件72便於設置於導電 層5 8。 請參閱第四圖，其係為本發明另一較佳實施例之發 光二極體結構之結構示意圖；如圖所示，此實施例與第 二圖之實施例相較之下，此實施例更包含一反射件80， 反射件80設於第二金屬電極64下方。由於第二金屬電極 64會吸收部份光線，故此實施例係於第二金屬電極64下 方設置反射件，以避免第二金屬電極64吸收部份光線， 如此更提升發光二極體之發光效率。 請參閱第五圖，其係為本發明另一較佳實施例之發 光二極體結構之結構示意圖；如圖所示，此實施例與第 二圖之實施例相較之下，此實施例更包含一絕緣件82， 099147095 表單編號A0101 第8頁/共21頁 0992080910-0 絕緣件82設於第二半導體層56上方並與第二金屬電極以 相對。絕緣件82之面積可大於第二金屬電極μ之面積， 絕緣件82的至少~邊長長度大於第二金屬電極64的相對 邊長長度1微米以上，或是絕緣件82的總邊長長度大於 第二金屬電極64的總邊長長度2微米以上。如此當第二 金屬電極64導通電流時，電流將由第二金屬電極64往第 二半導體層56傳導，而此實施例之絕緣件82位於導電層 58與第二半導體層56之間，用以遮蔽第二半導體層“位 於第二金屬電極64之正下方所通過之電流，讓第二半導 體層56其他位置所通電流增加.。 由於第二金屬電極64並非透光之材料，因此第二金 屬電極64會吸收發光二極體所發之光線而影響發光效率 。因此若能使第二金屬電極64之正下方的發光效率降低 ’以減少電流導通至第二金屬電極6 4之正下方.，以讓第 二金屬電極64之正下方之外的發光效率提升。此實施例 在配合透光導電延伸件72珩讓翁嫌:均勻分布，以避免電 流集中產生的能耗’如此更可提升發光二極體結構之發 光效率均勻性。 明參閱第六圖，其係為本發明另一較佳實施例之發 光一極體結構之結構示意圖；如圖所示，此實施例與第 五圖之實施例相較之下，此實施例更包含一絕緣延伸件 84，絕緣延伸件84設於第二半導體層56上方並接設於絕 緣件82，絕緣延伸件84與透光導電延伸件72相對。絕緣 延伸件84之面積大於透光導電延伸件72之面積。如此當 第二金屬電極64導通電流時，電流將由第二金屬電極64 往第一半導體層56傳導，亦電流由第二金屬電極μ往會 表單編號A0101 第9 1/共21頁 〇9! 201228035 透光導電延伸件72分流。 此實施例除了藉由絕緣件8 2與透光導電延伸件7 2以 提高發光效率之外，此實施例更於透光導電延伸件72之 下方設置絕緣延伸件84，藉由絕緣延伸件84以減少發光 二極體所發之光線被遮蔽，以讓電流均勻分布。 請參閱第七圖，其係為本發明另一較佳實施例之發 光二極體結構之結構示意圖；如圖所示，此實施例與第 五圖之實施例相較之下，此實施例設置反射件80，反射 件80設於絕緣件82之下方。如此可將絕緣件82下方之光 線反射，進而減少絕緣件82吸收光線之情形發生，如此 更可提升發光二極體之發光效率。 综上所述，本發明之發光二極體結構包含一基板、 一第一半導體層、一第一金屬電極、一第二半導體層、 一導電層與一第二金屬電極與至少一透光導電延伸件， 第一半導體層設於基板上方，第一金屬電極設於第一半 導體層上方，第二半導體層設於第一半導體層上方，導 電層設於第二半導體層上方，第二金屬電極設於導電層 上方，透光導電延伸件設於導電層上方並與第二金屬電 極相接設，透光導電延伸件之材料為一導電材料。藉由 透光導電延伸件可減少發光二極體所發之光線被遮蔽之 情形，亦可讓電流均勻分布，進而提高發光二極體之發 光效率。 故本發明係實為一具有新穎性、進步性及可供產業 利用者，應符合我國專利法所規定之專利申請要件無疑 ，爰依法提出發明專利申請，祈鈎局早曰賜准專利， 至感為禱。 099147095 表單編號A0101 第10頁/共21頁 0992080910-0 201228035 惟以上所述者，僅為本發明之一較佳實施例而已， 並非用來限定本發明實施之範圍，舉凡依本發明申請專 利範圍所述之形狀、構造、特徵及精神所為之均等變化 與修飾，均應包括於本發明之申請專利範圍内。 【圖式簡单說明】 [0005] 第一圖為習知技術之發光二極體之結構示意圖； 第二圖為本發明較佳實施例之發光二極體結構之結構示 意圖， ❹ 第三圖為本發明另一較佳實施例之發光二極體結構之結 構不意圖， 第四圖為本發明另一較佳實施例之發光二極體結構之結 構不意圖， 第五圖為本發明另一較佳實施例之發光二極體結構之結 構示意圖； 第六圖為本發明另一較佳實施例之發光二極體結構之結 構示意圖；以及 Ο [0006] 第七圖為本發明另一較佳實施例之發光二極體結構之結 構示意圖。 【主要元件符號說明】 12 基板 14 第一半導體層 16 第二半導體層 18 導電層 22 第一金屬電極 24 第二金屬電極 表單編號Α0101 第11頁/共21頁 099147095 0992080910-0 201228035 32 絕緣件 34 絕緣延伸件 42 導電延伸件 52 基板 54 第一半導體層 56 第二半導體層 58 導電層 62 第一金屬電極 64 第二金屬電極 72 透光導電延伸件 80 反射件 82 絕緣件 84 絕緣延伸件 099147095 表單編號A0101 第12頁/共21頁 0992080910-0201228035 VI. Description of the Invention: [Technical Leadership of the Invention] [0001] The present invention relates to a light-emitting diode structure, and more particularly to a light-emitting diode structure capable of improving luminous efficiency. [Previous sputum surgery] [0002] Light sources are indispensable in human life. With the development of technology, lighting tools with better illumination and more power saving have emerged. Currently - the most commonly used illumination source is the Light-Emitting 0 Dlode (LED). The illuminating pole is a solid-state semiconductor component. The two kinds of plants generated by the current through the two poles are combined to release the energy in the form of light. Luminous Dipolar Zhao has many advantages, such as Zhao Jixiao, power saving, good luminous efficiency, long life, and operational response speed, and has the advantages of no heat and light pollution, such as mercury and other toxic substances. In particular, under the advocacy of the promotion of "energy saving and carbon reduction", the superiority of power saving in the "light-emitting bipolar competition" began to receive attention. Today, with the growing shortage of petrochemical energy and the high level of environmental protection, the use of light-emitting diodes has been the focus of concern. Please refer to the first figure, which is a schematic structural diagram of a light-emitting diode of the prior art; as shown, the conventional light-emitting diode comprises a substrate 12, a first semiconductor layer 14, and a second semiconductor layer. 16 and a conductive layer 18, the first semiconductor layer 14 is disposed above the substrate 12, the second semiconductor layer 16 is disposed above the first semiconductor layer 14, and the conductive layer 18 is disposed above the second semiconductor layer 16. The conventional method further includes a first metal electrode 22 and a second metal electrode 24, the first metal electrode 22 is in ohmic contact with the n-type first semiconductor layer 14 to be connected to the negative electrode of the external power source, and the second metal electrode 24 Then, it is connected to the conductive layer 18 above the second semiconductor layer 16 of the p-type 099147095 form number Α0101 3rd page 2192080910-0 201228035, and the second metal electrode 24 is connected to the positive electrode of the external power supply. When the first metal electrode 22 and the second metal electrode 24 are energized, a light-emitting layer will be generated between the first semiconductor layer 14 and the second semiconductor layer 16 to emit light, and the light will be diffused from above the second semiconductor layer 16. The conventional conductive layer 18 has the characteristics of being transparent and electrically conductive to uniformly distribute the externally supplied current to avoid the energy consumption generated by the current concentration. However, the second metal electrode 24 of the conventional light-emitting diode is not a material for transmitting light. Therefore, the second metal electrode 24 will absorb part of the light, which will affect the luminous efficiency of the light-emitting diode. In order to improve the luminous efficiency of the light-emitting diode, the prior art further includes an insulating member 32 between the conductive layer 18 and the second semiconductor layer 16 to shield the second semiconductor layer 16 from the second metal. The current passing directly under the electrode 24 increases the current flowing through the other locations of the second semiconductor layer 16, which reduces the luminous efficiency directly under the second metal electrode 24 and enhances the luminous efficiency at other locations. Further, in order to further improve the luminous efficiency, at least one conductive extension member 42 is further provided. The conductive extension member 42 is disposed above the conductive layer 18 and is in contact with the second metal electrode 24. Thus, the current passing through the second metal electrode 24 can be evenly distributed by the conductive extension 42 to improve luminous efficiency. However, the conductive extension member 42 is also not a material for transmitting light, so that when the light-emitting layer is illuminated, light is absorbed due to the arrangement of the conductive extension member 42, so that the luminous efficiency is lowered. Moreover, the prior art further provides that at least the insulating extension 34' the insulating extension 34 is connected to the insulating member 32, the insulating extension 34 is located between the conductive layer 18 and the second semiconductor layer 16, and the insulating extension 34 is used for shielding The second semiconductor layer 16 is located at a current through which the conductive extension 42 passes, and the insulating extension 34 also absorbs light to reduce the rate of illuminating. 099147095 Form No. A0101 Page 4 / Total 21 Page 0992080910-0 201228035 Therefore, the present invention provides a light-emitting diode structure which not only allows a uniform distribution of current, but also improves the luminous efficiency of the light-emitting diode to solve The above problem. SUMMARY OF THE INVENTION [0003] The main purpose of the present invention is to provide a light-emitting diode structure, which is connected to a conductive layer by at least one transparent conductive extension member, thereby reducing the light-emitting diode In the case where the light emitted by the polar body is absorbed, the current can be evenly distributed, thereby improving the luminous efficiency of the light-emitting diode. The second object of the present invention is to provide a light-emitting diode structure which is tied to the second semiconductor. An insulating member is disposed above the layer, and the insulating member is located under the metal electrode. The insulating member reduces the current flowing under the metal electrode, thereby reducing the light under the metal electrode to enhance the light of other regions, thereby further improving the light emitting diode. The luminous efficiency of the body. The LED structure of the present invention comprises a substrate, a first semiconductor layer, a first metal electrode, a second semiconductor layer, a conductive layer and a second metal electrode and at least one transparent conductive extension, first The semiconductor layer is disposed above the substrate, the first metal electrode is disposed above the first semiconductor layer, the second semiconductor layer is disposed above the first semiconductor layer and adjacent to the first metal electrode, and the conductive layer is disposed above the second semiconductor layer, The two metal electrodes are disposed above the conductive layer, and the transparent conductive extension is disposed above the conductive layer and connected to the second metal electrode. The material of the transparent conductive extension is a conductive material, and the transparent conductive extension is transparent. The luminosity is greater than 10%, and more preferably the transmittance is greater than 30%. The light-transmitting conductive extension can reduce the absorption of the light emitted by the light-emitting diode, and can evenly distribute the current, thereby improving the luminous efficiency of the light-emitting diode. Form No. 1010101 Page 5 of 21 0992080910-0 201228035 In addition, the LED structure of the present invention further comprises an insulating member disposed above the second semiconductor layer and opposite to the second metal electrode. The insulating member can reduce the current flowing under the second metal electrode to reduce the light under the second metal electrode and enhance the light in other regions, thereby further improving the luminous efficiency of the light emitting diode. [Embodiment] [0004] For a better understanding and understanding of the structural features and the efficacies of the present invention, the preferred embodiment and the detailed description are as follows: 2 is a schematic structural view of a light emitting diode structure according to a preferred embodiment of the present invention; as shown, the light emitting diode structure of the present invention comprises a substrate 52, a first semiconductor layer 54, and a first a metal electrode 62, a second semiconductor layer 56, a conductive layer 58, a second metal electrode 64 and at least one transparent conductive extension 72. The first semiconductor layer 54 is disposed above the substrate 52, and the first metal electrode 62 is disposed. The second semiconductor layer 56 is disposed above the first semiconductor layer 54 and adjacent to the first metal electrode 62. The conductive layer 58 is disposed above the second semiconductor layer 56, and the second metal electrode 64 is disposed on the first semiconductor layer 54. Above the conductive layer 58, a light-transmissive conductive extension 72 is disposed above the conductive layer 58 and is in contact with the second metal electrode 64. The transparent conductive extension member 72 can improve the uniform distribution of current and reduce the shielding effect of the transparent conductive extension member 72, thereby improving the luminous efficiency of the light emitting diode. The substrate 52 can be a sapphire substrate, and the sapphire substrate is electrically insulated. The first semiconductor layer 54 is disposed above the substrate 52, and the first semiconductor layer 54 may be an n-type semiconductor compound layer, such as gallium nitride or indium gallium nitride. The second semiconductor layer 56 is disposed above the first semiconductor layer 54, and the second semiconductor layer 099147095 Form No. Α0101 Page 6 / 21 pages 0992080910-0 M may be a p-type semiconductor compound layer, such as gallium nitride or nitrided steel record. By combining the first semiconductor layer 54 and the second semiconductor layer 56, the electron holes between the n-type semiconductor compound layer and the germanium-type semiconductor compound layer are combined to emit light, so that the first semiconductor layer 54 and the second semiconductor The layer "forms a light-emitting layer to emit light. The conductive layer 58 is a transparent conductive layer, and the material of the conductive layer is selected from the group consisting of nickel: gold, indium tin oxide, cadmium tin oxide, antimony tin antimonide, transparent conductive adhesive, oxidation. Zinc, zinc oxide, and any combination of the above. Conductive layer 58 is exemplified by indium tin oxide, which is transparent and electrically conductive, and thus is suitable as the second metal electrode 64 and the second semiconductor layer. The conductive layer 58 is used to uniformly distribute the externally supplied current to avoid the energy consumption generated by the current concentration. The first metal electrode 62 forms an ohmic contact with the n-type first semiconductor layer 54 as an n-type contact layer. To connect to one of the external power sources, the second metal electrode 64 is connected to the p-type second semiconductor layer 56 and to the positive electrode of the external power source. The light-transmitting conductive extension 72 of the present invention is a conductive material. The conductive material is selected from one of any combination of recording, gold, inscription, silver, beginning, road, handle, tin, rhodium, titanium, lead, antimony, copper, and any combination of the above, so that the transparent conductive extension 72 is provided. The current flowing through the second metal electrode 64 can be shunted to the transparent conductive extension 72, and the current can be transmitted to the second semiconductor layer 56 by the transparent conductive extension 72, thereby improving the uniform distribution of current, thereby improving illumination. Uniformity of luminous efficiency of the diode. The transmittance of the transparent conductive extension is greater than 10%, more preferably the transmittance is greater than 3%, and the thickness of the transparent conductive extension 72 is less than 5 angstroms The light-transmissive conductive extension 72 is disposed above the conductive layer 58 and connected to the second metal electrode 64, and the light-transmitting conductive extension 0992080910-0 is in the form of a thickness of less than 300 Å. No. 010 Ι page 7 / 2] page 201228035 The protruding member 72 is disposed on the side of the second metal electrode 64, and the light-transmitting conductive extension member 72 itself transmits light, so when the light-emitting diode emits light, the light is not transmitted. The conductive extension 72 is blocked, and thus can be reduced by the transparent conductive extension 72 The light emitted by the photodiode is shielded by the second metal electrode 64, so that the luminous efficiency of the light emitting diode can be improved. Please refer to the third figure, which is a light emitting diode according to another preferred embodiment of the present invention. Schematic diagram of the structure of the body; as shown in the figure, the embodiment of the embodiment is different from the embodiment of the second figure in that the second metal electrode 64 is disposed differently from the light-transmitting conductive extension 72. The transparent conductive extension 72 of the second figure The conductive layer 58 is disposed, and the transparent conductive extension 72 of the second figure is connected to the second metal electrode 64; and in this embodiment, the transparent conductive extension 72 is disposed above the conductive layer 58, and The two metal electrodes 64 are disposed above the transparent conductive extensions 72 to increase the contact area between the second metal electrodes 64 and the transparent conductive extensions 72, so that the current can be evenly distributed, and the second metal electrodes 64 can be The light-transmissive conductive extension 72 is conveniently disposed on the conductive layer 58. Please refer to the fourth figure, which is a schematic structural view of a light emitting diode structure according to another preferred embodiment of the present invention; as shown in the figure, this embodiment is compared with the embodiment of the second figure, this embodiment Further, a reflector 80 is disposed, and the reflector 80 is disposed under the second metal electrode 64. Since the second metal electrode 64 absorbs part of the light, this embodiment is provided with a reflecting member under the second metal electrode 64 to prevent the second metal electrode 64 from absorbing a part of the light, thereby improving the luminous efficiency of the light emitting diode. Please refer to FIG. 5 , which is a schematic structural diagram of a structure of a light emitting diode according to another preferred embodiment of the present invention; as shown in the figure, this embodiment is compared with the embodiment of the second figure, this embodiment Further comprising an insulating member 82, 099147095 Form No. A0101 Page 8 / Total 21 page 0992080910-0 The insulating member 82 is disposed above the second semiconductor layer 56 and opposite to the second metal electrode. The area of the insulating member 82 may be larger than the area of the second metal electrode μ, and the length of the at least one side length of the insulating member 82 is greater than 1 μm or more of the length of the opposite side of the second metal electrode 64, or the total length of the insulating member 82 is greater than The total length of the second metal electrode 64 is longer than 2 μm. Thus, when the second metal electrode 64 conducts current, the current will be conducted from the second metal electrode 64 to the second semiconductor layer 56, and the insulating member 82 of this embodiment is located between the conductive layer 58 and the second semiconductor layer 56 for shielding The second semiconductor layer "flows directly under the second metal electrode 64 to increase the current flowing through the other locations of the second semiconductor layer 56. Since the second metal electrode 64 is not a material that transmits light, the second metal electrode 64 absorbs the light emitted by the light-emitting diode to affect the luminous efficiency. Therefore, if the luminous efficiency directly under the second metal electrode 64 can be reduced 'to reduce the current conduction to the right side of the second metal electrode 64, The luminous efficiency outside the positive side of the second metal electrode 64 is improved. This embodiment is combined with the light-transmitting conductive extension member 72 to allow uniform distribution to avoid the energy consumption generated by the current concentration. The luminous efficiency uniformity of the polar body structure. Referring to the sixth figure, it is a schematic structural view of a light-emitting diode structure according to another preferred embodiment of the present invention; as shown in the figure, this implementation In contrast to the embodiment of the fifth embodiment, the embodiment further includes an insulating extension member 84 disposed above the second semiconductor layer 56 and connected to the insulating member 82, the insulating extension member 84 and the transparent member. The conductive extension member 72 is opposite to each other. The area of the insulating extension member 84 is larger than the area of the transparent conductive extension member 72. When the second metal electrode 64 conducts current, the current will be conducted from the second metal electrode 64 to the first semiconductor layer 56, and the current is also From the second metal electrode μ to the conference form number A0101, the first light transmission extension 72 is shunted. In addition to the luminous efficiency, this embodiment further provides an insulating extension 84 below the transparent conductive extension 72, and the insulating extension 84 is used to reduce the light emitted by the LED to be evenly distributed. 7 is a schematic structural view of a light emitting diode structure according to another preferred embodiment of the present invention; as shown in the figure, this embodiment is set in comparison with the embodiment of the fifth embodiment. Reflector 80, reverse The member 80 is disposed under the insulating member 82. This can reflect the light under the insulating member 82, thereby reducing the absorption of light by the insulating member 82, thereby improving the luminous efficiency of the light-emitting diode. The light emitting diode structure of the invention comprises a substrate, a first semiconductor layer, a first metal electrode, a second semiconductor layer, a conductive layer and a second metal electrode and at least one transparent conductive extension, the first semiconductor The second metal electrode is disposed above the first semiconductor layer, the second semiconductor layer is disposed above the first semiconductor layer, the conductive layer is disposed above the second semiconductor layer, and the second metal electrode is disposed above the conductive layer. The transparent conductive extension is disposed above the conductive layer and connected to the second metal electrode, and the material of the transparent conductive extension is a conductive material. The light-transmitting conductive extension can reduce the light shielding of the light-emitting diode, and evenly distribute the current, thereby improving the light-emitting efficiency of the light-emitting diode. Therefore, the present invention is a novelty, progressive and available for industrial use, and should conform to the patent application requirements stipulated in the Patent Law of China, and the invention patent application is filed according to law, and the Pledge Bureau grants the patent as early as possible. Feeling a prayer. 099147095 Form No. A0101 Page 10 of 21 0992080910-0 201228035 However, the above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the practice of the present invention. Equivalent changes and modifications of the shapes, configurations, features and spirits are intended to be included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0005] The first figure is a schematic structural view of a light-emitting diode of a prior art; the second figure is a schematic structural view of a light-emitting diode structure according to a preferred embodiment of the present invention, ❹ The structure of the light emitting diode structure according to another preferred embodiment of the present invention is not intended, and the fourth figure is not intended to be a structure of the light emitting diode structure according to another preferred embodiment of the present invention. A schematic structural view of a light emitting diode structure according to a preferred embodiment; FIG. 6 is a schematic structural view of a light emitting diode structure according to another preferred embodiment of the present invention; and [0006] A schematic structural view of a light emitting diode structure of a preferred embodiment. [Description of main components] 12 substrate 14 first semiconductor layer 16 second semiconductor layer 18 conductive layer 22 first metal electrode 24 second metal electrode form number Α 0101 page 11 / total 21 page 099147095 0992080910-0 201228035 32 insulating member 34 Insulation extension 42 conductive extension 52 substrate 54 first semiconductor layer 56 second semiconductor layer 58 conductive layer 62 first metal electrode 64 second metal electrode 72 light-transmissive conductive extension 80 reflective member 82 insulating member 84 insulating extension 099147095 form No. A0101 Page 12 of 21 0992080910-0