CN206364047U

CN206364047U - A kind of LED chip

Info

Publication number: CN206364047U
Application number: CN201620823649.8U
Authority: CN
Inventors: 卫婷; 刘小星; 顾小云; 王力明
Original assignee: HC Semitek Zhejiang Co Ltd
Current assignee: HC Semitek Zhejiang Co Ltd
Priority date: 2016-07-29
Filing date: 2016-07-29
Publication date: 2017-07-28
Anticipated expiration: 2026-07-29

Abstract

The utility model discloses a kind of LED chip, belong to technical field of semiconductors.The LED chip includes substrate, and it is sequentially laminated on the N-type layer of the first surface of substrate, luminescent layer, P-type layer, P-type layer is provided with the groove for extending to N-type layer, current barrier layer is sequentially laminated with P-type layer, transparency conducting layer, P-type electrode, N-type layer is provided with N-type electrode, N-type layer, covered with passivation layer on the side wall and transparency conducting layer of groove, the second surface of substrate is provided with reflecting layer, the second surface of substrate is the surface opposite with the first surface of substrate, the angle of the side of LED chip and the bottom surface of LED chip is more than 90 ° and less than 180 °, the bottom surface of LED chip is the surface in reflecting layer, the side of LED chip is the adjacent surface of the bottom surface of LED chip.The utility model can improve LED light extraction efficiency.

Description

A kind of LED chip

Technical field

The utility model is related to technical field of semiconductors, more particularly to a kind of light-emitting diode chip for backlight unit.

Background technology

GaN base light emitting (Light Emitting Diodes, abbreviation LED) is as solid-state illumination light source, with section Can, environmental protection, reliability high, long lifespan the advantages of, be widely used in illumination, signal show, backlight, car light and large screen display It is the focus studied at present Deng field.

Existing LED chip includes substrate and the N-type layer, luminescent layer, the P-type layer that are sequentially laminated on substrate, P-type layer Provided with the groove for extending to N-type layer, N-type layer is provided with N-type electrode, and P-type layer is provided with P-type electrode.

During the utility model is realized, inventor has found that prior art at least has problems with：

GaN refractive index and the refractive index of air are very big, the light sent from chip light emitting layer, and only a fraction light can To be projected from device inside, most of light is all limited in GaN, causes LED light extraction efficiency relatively low.

Utility model content

In order to the light extraction efficiency for solving prior art LED it is relatively low the problem of, the utility model embodiment provides a kind of send out Luminous diode chip.The technical scheme is as follows：

The utility model embodiment provide a kind of LED chip, the LED chip include substrate and N-type layer, luminescent layer, the P-type layer of the first surface of the substrate are sequentially laminated on, the P-type layer is provided with and extends to the N-type Current barrier layer, transparency conducting layer, P-type electrode are sequentially laminated with the groove of layer, the P-type layer, the N-type layer is provided with N Covered with passivation layer, the second of the substrate on type electrode, the N-type layer, the side wall of the groove and the transparency conducting layer Surface is provided with reflecting layer, and the second surface of the substrate is the surface opposite with the first surface of the substrate, the LED chip Side and the angle of the bottom surface of the LED chip be more than 90 ° and less than 180 °, the bottom surface of the LED chip is the reflection The surface of layer, the side of the LED chip is the adjacent surface of the bottom surface of the LED chip.

Alternatively, the angle of the side of the LED chip and the bottom surface of the LED chip is 110 °~130 °.

Preferably, the angle of the side of the LED chip and the bottom surface of the LED chip is 125 °.

Alternatively, the substrate is Sapphire Substrate, silicon substrate or silicon carbide substrates.

Alternatively, the reflecting layer is distributed bragg reflector mirror DBR or Omni-directional reflector ODR.

The beneficial effect brought of technical scheme that the utility model embodiment is provided is：

It is more than 90 ° and less than 180 ° with the angle of the bottom surface of LED chip by the side of LED chip, the bottom surface of LED chip For the surface in reflecting layer, the side of LED chip is the adjacent surface of the bottom surface of LED chip, and LED chip is in inverted trapezoidal structure, one Aspect increases the lighting area of chip side wall, on the other hand changes the rising angle of light, the incidence angle for the light that luminescent layer is produced Degree readily satisfies critical angle requirement and projected, it is to avoid light is limited in GaN and is depleted, and improves LED light extraction efficiency.

Brief description of the drawings

, below will be to needed for embodiment description in order to illustrate more clearly of the technical scheme in the utility model embodiment The accompanying drawing to be used is briefly described, it should be apparent that, drawings in the following description are only some realities of the present utility model Example is applied, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to these accompanying drawings Obtain other accompanying drawings.

Fig. 1 is a kind of structural representation for LED chip that the utility model embodiment is provided；

Fig. 2 be substrate provided in an embodiment of the present invention side and bottom surface angle schematic diagram.

Embodiment

It is new to this practicality below in conjunction with accompanying drawing to make the purpose of this utility model, technical scheme and advantage clearer Type embodiment is described in further detail.

Embodiment

The utility model embodiment provides a kind of LED chip, and referring to Fig. 1, the LED chip is including substrate 1 and successively N-type layer 2, luminescent layer 3, the P-type layer 4 of the first surface of substrate 1 are layered in, P-type layer 4 is provided with the groove for extending to N-type layer 2 100, current barrier layer 5, transparency conducting layer 6, P-type electrode 7 are sequentially laminated with P-type layer 4, N-type layer 2 is provided with N-type electrode 8, N Covered with passivation layer 9 on type layer 2, the side wall of groove 100 and transparency conducting layer 6, the second surface of substrate 1 is provided with reflecting layer 10, The second surface of substrate 1 is the surface opposite with the first surface of substrate 1.

In the present embodiment, the angle of the side of LED chip and the bottom surface of LED chip is more than 90 ° and less than 180 °, LED The bottom surface of chip is the surface in reflecting layer 10, and the side of LED chip is the adjacent surface of the bottom surface of LED chip.

Alternatively, the angle of the side of LED chip and the bottom surface of LED chip can be 110 °~130 °.

Preferably, the angle of the side of LED chip and the bottom surface of LED chip can be 125 °.

Alternatively, substrate 1 can be Sapphire Substrate, silicon substrate or silicon carbide substrates.

In actual applications, light is calculated from the critical angle of the outside outgoing of substrate according to equation below：

θ=arcsin (1/n)；

Wherein, θ is critical angle, and n is the refractive index of substrate.

It is readily apparent that, the refractive index of Sapphire Substrate is 1.762~1.77, the refractive index of silicon substrate is 3.42, silicon nitride The refractive index of substrate is 2.648~2.6767, therefore the critical angle θ of Sapphire Substrate is 35 °, and the critical angle θ of silicon substrate is 17 °, the critical angle θ of silicon nitrate substrate is 22 °.

Referring to Fig. 2, the critical angle complementary angle α of Sapphire Substrate is 55 °, and the refractive index critical angle complementary angle α of silicon nitrate substrate is 73 °, the critical angle complementary angle of silicon substrate is 68 °.Because under critical angle, reflected light is minimum, refraction light is maximum, and performance is best, therefore The side of Sapphire Substrate and the optimal angle β of bottom surface are 125 °, and the side of silicon nitrate substrate and the optimal angle β of bottom surface are 107 °, the side of silicon substrate and the optimal angle β of bottom surface are 112 °.Because Refractive Index of Material is relevant with temperature and wavelength, and enter The angle for penetrating light is also rambling, thus in the present embodiment by the angle of the side of substrate and bottom surface be defined to 110 °~ 130°。

Alternatively, reflecting layer 10 can for distributed bragg reflector mirror (Distributed Bragg Reflection, Abbreviation DBR) or Omni-directional reflector (Omni-Directional Reflector, abbreviation ODR).

Specifically, N-type layer 2 is N-type GaN layer, and luminescent layer 3 includes alternately laminated InGaN layer and GaN layer, and P-type layer 4 is P Type GaN layer, current barrier layer 5 is SiO₂Layer, transparency conducting layer 6 is tin indium oxide (Indium Tin Oxides, abbreviation ITO) Layer, P-type electrode 7 is that the multiple material in Cr, Pt, Au, Ti, Ni, Al, Mo, Pd is stacked gradually and formed, N-type electrode 8 be Cr, Pt, Multiple material in Au, Ti, Ni, Al, Mo, Pd, which is stacked gradually, to be formed, and passivation layer 9 is SiO₂Layer.

The utility model embodiment is more than 90 ° with the angle of the bottom surface of LED chip by the side of LED chip and is less than 180 °, the bottom surface of LED chip is the surface in reflecting layer, and the side of LED chip is the adjacent surface of the bottom surface of LED chip, LED core Piece is in inverted trapezoidal structure, on the one hand increases the lighting area of chip side wall, on the other hand changes the rising angle of light, luminescent layer The incident angle of the light of generation readily satisfies critical angle requirement and projected, it is to avoid light is limited in GaN and is depleted, and improves LED Light extraction efficiency.

Preferred embodiment of the present utility model is the foregoing is only, it is all in this practicality not to limit the utility model Within new spirit and principle, any modification, equivalent substitution and improvements made etc. should be included in guarantor of the present utility model Within the scope of shield.

Claims

1. a kind of LED chip, the LED chip includes substrate and is sequentially laminated on the first of the substrate N-type layer, luminescent layer, the P-type layer on surface, the P-type layer are provided with the groove for extending to the N-type layer, the P-type layer successively Current barrier layer, transparency conducting layer, P-type electrode are laminated with, the N-type layer is provided with N-type electrode, the N-type layer, the groove Side wall and the transparency conducting layer on covered with passivation layer, the second surface of the substrate is provided with reflecting layer, the substrate Second surface be the surface opposite with the first surface of the substrate, it is characterised in that the side of the LED chip with it is described The angle of the bottom surface of LED chip is more than 90 ° and less than 180 °, and the bottom surface of the LED chip is the surface in the reflecting layer, described The side of LED chip is the adjacent surface of the bottom surface of the LED chip.

2. LED chip according to claim 1, it is characterised in that the side of the LED chip and the LED chip The angle of bottom surface is 110 °~130 °.

3. LED chip according to claim 2, it is characterised in that the side of the LED chip and the LED chip The angle of bottom surface is 125 °.

4. the LED chip according to claim any one of 1-3, it is characterised in that the substrate is Sapphire Substrate, silicon lining Bottom or silicon carbide substrates.

5. the LED chip according to claim any one of 1-3, it is characterised in that the reflecting layer is distributed Bragg Speculum DBR or Omni-directional reflector ODR.