CN204375785U - Flip-chip light emitting diode - Google Patents
Flip-chip light emitting diode Download PDFInfo
- Publication number
- CN204375785U CN204375785U CN201420868112.4U CN201420868112U CN204375785U CN 204375785 U CN204375785 U CN 204375785U CN 201420868112 U CN201420868112 U CN 201420868112U CN 204375785 U CN204375785 U CN 204375785U
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- CN
- China
- Prior art keywords
- emitting diode
- flip chip
- layer
- chip type
- type light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 description 8
- 238000007731 hot pressing Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Abstract
The utility model discloses a flip-chip LED, which comprises a substrate and an LED epitaxial layer above the substrate. The LED epitaxial layer comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer from bottom to top. The light reflecting layer coats the light emitting layer and the p-type semiconductor layer, wherein the light reflecting layer is provided with a roughened surface. According to the utility model discloses a flip-chip LED, its light reflection layer has the roughened surface, and can increase flip-chip LED's luminous efficacy by a wide margin.
Description
Technical field
The utility model relates to a kind of flip chip type light-emitting diode, and particularly a kind of reflection layer has the flip chip type light-emitting diode of roughened surface.
Background technology
The advantages such as light-emitting diode (light emitting diode, LED) has that power consumption is low, component life is long, need not warm up the lamp time and reaction speed is fast.Add that its volume is little, vibration resistance, applicable volume production, easy fit applications demand and make element that is minimum or array, therefore various application can be widely used in, such as the light source of notebook computer, monitor, mobile phone, TV and liquid crystal display backlight module used.Moreover along with the continuous lifting of technical field, developed the High Power LED of high illumination briliancy at present, its luminous intensity has reached the degree of illumination.
The light that general light-emitting diode produces enters into air by positive and negative electrode, but positive and negative electrode is understood shield lights and reduced the external quantum efficiency of light.Therefore start in recent years to develop a kind of flip chip type light-emitting diode, utilize reflection layer that light is sent towards tossing about of electrode, and enter air by substrate.Employing flip chip type light-emitting diode significantly can reduce the facts generation that light is covered, and improves luminous efficiency.
In addition, the radiating effect of flip chip type light-emitting diode is good, can not be overheated and affect luminous efficiency.But, and the light that not all produces from luminescent layer all can be reflected by reflection layer, still has the light dissipation of part and reduces luminous efficiency.
Utility model content
Therefore, the utility model object is open a kind of flip chip type light-emitting diode, and being used for increases the reflectivity of reflection layer.
An aspect of the present utility model provides a kind of flip chip type light-emitting diode, comprises substrate, and light-emitting diode epitaxial layer, and it is positioned at surface.Light-emitting diode epitaxial layer comprises n-type semiconductor layer, luminescent layer and p-type semiconductor layer from the bottom to top.The coated luminescent layer of reflection layer and p-type semiconductor layer, wherein reflection layer has roughened surface.
According to the utility model execution mode, wherein also comprise transparency conducting layer, transparency conducting layer is between p-type semiconductor layer and reflection layer.
According to the utility model execution mode, wherein transparency conducting layer is indium and tin oxide film.
According to the utility model execution mode, wherein substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board or glass substrate.
According to the utility model execution mode, wherein reflection layer is aluminium lamination or silver layer.
According to the utility model execution mode, wherein reflection layer is stacked formation so that the sub-reflector of two kinds of different refractivities is staggered.
According to the utility model execution mode, wherein the material in the sub-reflector of two kinds of different refractivities is titanium oxide/silica, alumina/silica or nitrogenize silicon/oxidative silicon.
According to the utility model execution mode, wherein roughened surface is positioned at upper surface or the lower surface of reflection layer.
According to the utility model execution mode, wherein on the contact-making surface of roughened surface between the sub-reflector of two kinds of different refractivities.
According to the utility model execution mode, wherein roughened surface has photon crystal structure.
The utility model proposes a kind of flip chip type light-emitting diode, its reflection layer has roughened surface, and significantly can increase the luminous efficiency of flip chip type light-emitting diode.
Accompanying drawing explanation
For above and other object of the present utility model, feature, advantage and embodiment can also be become apparent, being described in detail as follows of appended accompanying drawing:
Fig. 1 is a kind of flip chip type light-emitting diode according to the utility model some embodiments.
Fig. 2 is a kind of flip chip type light-emitting diode according to other some embodiments of the utility model.
Fig. 3 is a kind of flip chip type light-emitting diode according to other some embodiments of the utility model.
Fig. 4 is a kind of flip chip type light-emitting diode according to other some embodiments of the utility model.
Embodiment
In order to make describing of present disclosure also add detailed and complete, hereafter enforcement aspect of the present utility model and specific embodiment are described with reference to the accompanying drawings; But this not implements or uses the unique forms of the utility model specific embodiment.Following the disclosed embodiment, can mutually combine or replace useful when, also can add other embodiment in an embodiment, and need not further record or illustrate.
Refer to Fig. 1, Fig. 1 is the profile of a kind of flip chip type light-emitting diode according to the utility model some embodiments.As shown in Figure 1, flip chip type light-emitting diode 100 comprises: substrate 110, and light-emitting diode epitaxial layer 120 is positioned at above substrate 110, and wherein substrate 110 is sapphire substrate, silicon carbide substrate, gallium nitride base board or glass substrate.
Light-emitting diode epitaxial layer 120 is respectively n-type semiconductor layer 122, luminescent layer 124 and p-type semiconductor layer 126 from the bottom to top.When adding forward bias voltage drop, most carrier electricity holes of p-type semiconductor layer 126 can be moved toward n-type semiconductor layer 122 direction; Most carrier electrons of n-type semiconductor layer 122 then move toward p-type semiconductor layer 126 direction.Electronics and electric hole are in the exhaustion region compound of p-n junction, and now electronics loses energy rank after being passed to valency electricity band by conduction band, and produces light with form of photons released energy.Wherein, p-n junction is luminescent layer 124.
There are p-type electrode 130 and n-type electrode 140 above light-emitting diode epitaxial layer 120, are electrically connected to p-type semiconductor layer 126 and n-type semiconductor layer 122 respectively.In section Example of the present invention, p-type electrode 130 is transparency conducting layer, its material indium tin oxide.The coated luminescent layer 124 of reflection layer 150, p-type semiconductor layer 126 and p-type electrode 130, reflection layer 150 can change the course of light, and the light that luminescent layer 124 is produced is entered in air by substrate 110.
Reflection layer 150 is comprehensive reflector, and it is formed by staggered being stacked of the first sub-reflector 152a and 152b and the second sub-reflector 154a and 154b, and wherein the refractive index of the first reflector 152a and 152b and the second sub-reflector 154a and 154b is different.The material of two kinds of different refractivities can be titanium oxide/silica, alumina/silica or nitrogenize silicon/oxidative silicon.
Reflection layer 150 also has roughened surface 156, and this roughened surface 156 is positioned at the upper surface of reflection layer 150.Roughened surface 156 has periodic concaveconvex structure, usually also known as making photonic crystal.Photonic crystal can revise the angle of incident light, and the light that luminescent layer 124 is produced reflects in roughened surface 156 place, and now light changes course and enters air in substrate 110 place.Can impress the upper surface of the second sub-reflector 154b or the mode of lithography to obtain roughened surface 156.In section Example of the present invention, impression can use hot pressing or mode of colding pressing to form roughened surface 156.
In other section Example of the present utility model, wherein reflection layer 150 is aluminium lamination or silver layer.
In other section Example of the present utility model, wherein roughened surface 156 is irregular roughened surface.
In addition, two metal coupling 160a and 160b are electrically connected to p-type electrode 130 and n-type electrode 140 respectively, and its electrically connect when encapsulating, to outer member, makes flip chip type light-emitting diode 100 work.By reflection layer 150, the light that luminescent layer 124 produces enters in air by substrate 110, avoids metal coupling 160a and 160b to cover the light loss of generation.
In this mandatory declaration, following embodiment continues to use element numbers and the partial content of previous embodiment, and adopts identical label to represent identical or approximate element, and eliminates the explanation of constructed content.Explanation about clipped can with reference to previous embodiment, the no longer repeated description of following embodiment.
Fig. 2 is the profile of a kind of flip chip type light-emitting diode of other some embodiments of the utility model.As shown in Figure 2, the flip chip type light-emitting diode 200 of present embodiment and the flip chip type light-emitting diode 100 of Fig. 1 similar.Details are as follows at the place of Main Differences only: the light-emitting diode 200 of Fig. 2 has reflection layer 250, reflection layer 250 is comprehensive reflector, it is formed by staggered being stacked of the first sub-reflector 252a and 252b and the second sub-reflector 254a and 254b, and wherein the refractive index of the first reflector 252a and 252b and the second sub-reflector 254a and 254b is different.The material of two kinds of different refractivities can be titanium oxide/silica, alumina/silica or nitrogenize silicon/oxidative silicon.
Reflection layer 250 has roughened surface 256, and this roughened surface 256 is positioned at the lower surface of reflection layer 250.More clearly say, roughened surface 256 is on the contact-making surface of the first sub-reflector 252a and p-type electrode 230.Roughened surface 256 has periodic concaveconvex structure, usually also known as making photonic crystal.Photonic crystal can revise the angle of incident light, and the light that luminescent layer 124 is produced reflects in roughened surface 256, and now light changes course and enters air in substrate 110 place.Can impress the upper surface of p-type electrode 230 or the mode of lithography to obtain roughened surface 256.In section Example of the present invention, impression can use hot pressing or mode of colding pressing to form roughened surface 256.
Fig. 3 is the profile of a kind of flip chip type light-emitting diode of other some embodiments of the utility model.As shown in Figure 3, the flip chip type light-emitting diode 300 of present embodiment and the flip chip type light-emitting diode 100 of Fig. 1 similar.Details are as follows at the place of Main Differences only: the flip chip type light-emitting diode 300 of Fig. 3 has reflection layer 350, reflection layer 350 is comprehensive reflector, formed by staggered being stacked of the first sub-reflector 352a and 352b and the second sub-reflector 354a and 354b, wherein the refractive index of the first reflector 352a and 352b and the second sub-reflector 354a and 354b is different.The material of two kinds of different refractivities can be titanium oxide/silica, alumina/silica or nitrogenize silicon/oxidative silicon.
Reflection layer 350 has roughened surface 356, and this roughened surface 356 is between the first sub-reflector 352b and the second sub-reflector 354a on contact-making surface.Roughened surface 356 has periodic concaveconvex structure, usually also known as making photonic crystal.Photonic crystal can revise the angle of incident light, and the light that luminescent layer 124 produces reflects in roughened surface 356, and now light changes course and enters air in substrate 110 place.Can impress the upper surface of the second sub-reflector 354a or the mode of lithography to obtain roughened surface 356.In section Example of the present invention, impression can use hot pressing or mode of colding pressing to form roughened surface 356.
In section Example of the present utility model, roughened surface 356 between the first sub-reflector 352a and the second sub-reflector 354a on contact-making surface, or between the first sub-reflector 352b and the second sub-reflector 354b on contact-making surface.
In other section Example of the present utility model, the contact-making surface in wherein adjacent sub-reflector all has roughened surface.
Fig. 4 is the profile of the flip chip type light-emitting diode of other some embodiments of the utility model.As shown in Figure 4, the flip chip type light-emitting diode 400 of present embodiment and the flip chip type light-emitting diode 100 of Fig. 1 similar.Details are as follows at the place of Main Differences only: the substrate 410 of the flip chip type light-emitting diode 400 of Fig. 4 has roughened surface 412, and this roughened surface 412 is positioned at the lower surface of substrate 410.Roughened surface 412 has periodic concaveconvex structure, usually also known as making photonic crystal.By the spacing of regulation and control photonic crystal, it can destroy or reduce the chance producing total reflection when light enters air from substrate 410, and guides light to enter in air to increase light extraction yield.Can impress the surface of substrate 410 or the mode of lithography to obtain roughened surface 412.In section Example of the present invention, impression can use hot pressing or mode of colding pressing to form roughened surface 412.
From above-mentioned the utility model execution mode, the utility model has following advantages.Flip chip type light-emitting diode disclosed in the utility model, its reflection layer has roughened surface.The reflection layer with roughened surface can allow the light produced from luminescent layer reflect toward orientation substrate, makes light enter into air by substrate, significantly increases the luminous efficiency of flip chip type light-emitting diode.
Although the utility model with embodiment openly as above; so it is not used for limiting the utility model; any those skilled in the art; not departing from spirit and scope of the present utility model; can do various different selection and amendment, therefore protection range of the present utility model limited by claims and equivalents thereof.
Claims (10)
1. a flip chip type light-emitting diode, is characterized in that, described flip chip type light-emitting diode comprises:
Substrate;
Light-emitting diode epitaxial layer, it is positioned at described surface, and described light-emitting diode epitaxial layer comprises from the bottom to top:
N-type semiconductor layer;
Luminescent layer; And
P-type semiconductor layer; And
Reflection layer, its coated described luminescent layer and described p-type semiconductor layer, wherein said reflection layer has roughened surface.
2. flip chip type light-emitting diode as claimed in claim 1, it is characterized in that, described flip chip type light-emitting diode also comprises transparency conducting layer, and wherein said transparency conducting layer is between described p-type semiconductor layer and described reflection layer.
3. flip chip type light-emitting diode as claimed in claim 2, it is characterized in that, described transparency conducting layer is indium and tin oxide film.
4. flip chip type light-emitting diode as claimed in claim 1, it is characterized in that, described substrate is sapphire substrate, silicon carbide substrate, gallium nitride base board or glass substrate.
5. flip chip type light-emitting diode as claimed in claim 1, it is characterized in that, described reflection layer is aluminium lamination or silver layer.
6. flip chip type light-emitting diode as claimed in claim 1, is characterized in that, described reflection layer is stacked formation so that the sub-reflector of two kinds of different refractivities is staggered.
7. flip chip type light-emitting diode as claimed in claim 6, it is characterized in that, the material in the sub-reflector of described two kinds of different refractivities is titanium oxide/silica, alumina/silica or nitrogenize silicon/oxidative silicon.
8. flip chip type light-emitting diode as claimed in claim 6, it is characterized in that, described roughened surface is positioned at upper surface or the lower surface of described reflection layer.
9. flip chip type light-emitting diode as claimed in claim 6, is characterized in that, on the contact-making surface of described roughened surface between the sub-reflector of described two kinds of different refractivities.
10. flip chip type light-emitting diode as claimed in claim 1, it is characterized in that, described roughened surface has photon crystal structure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103219014 | 2014-10-27 | ||
| TW103219014U TWM502964U (en) | 2014-10-27 | 2014-10-27 | Flip chip light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204375785U true CN204375785U (en) | 2015-06-03 |
Family
ID=53331980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420868112.4U Expired - Fee Related CN204375785U (en) | 2014-10-27 | 2014-12-31 | Flip-chip light emitting diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN204375785U (en) |
| TW (1) | TWM502964U (en) |
-
2014
- 2014-10-27 TW TW103219014U patent/TWM502964U/en not_active IP Right Cessation
- 2014-12-31 CN CN201420868112.4U patent/CN204375785U/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWM502964U (en) | 2015-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150603 Termination date: 20171231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |