CN102683556A - White-light-emitting diode with fluorescent layer - Google Patents
White-light-emitting diode with fluorescent layer Download PDFInfo
- Publication number
- CN102683556A CN102683556A CN2011100616768A CN201110061676A CN102683556A CN 102683556 A CN102683556 A CN 102683556A CN 2011100616768 A CN2011100616768 A CN 2011100616768A CN 201110061676 A CN201110061676 A CN 201110061676A CN 102683556 A CN102683556 A CN 102683556A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- layer
- emitting diode
- type gallium
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a white-light-emitting diode with a fluorescent layer, comprising a gallium nitride butter layer, an N-type gallium nitride layer, a multi-quantum-bit well aluminium gallium nitride layer, a P-type gallium nitride layer, a transparent conducting layer and an indium terbium oxide fluorescent layer which are sequentially stacked on a sapphire substrate. The white-light-emitting diode further comprises a cathode metal connecting layer connected with the P-type gallium nitride layer and an anode metal connecting layer connected with the N-type gallium nitride layer, wherein when the cathode metal connecting layer and the anode metal connecting layer are respectively connected with an external positive power source end and an external negative power source end, the multi-quantum-bit well aluminium gallium nitride layer can emit light because of electron hole recombination and the light penetrates through the P-type gallium nitride layer, the transparent conducting layer and the indium terbium oxide fluorescent layer to generate emergent light to be emitted to the outside, and the indium terbium oxide fluorescent layer has fluorescence so as to be used for converting light emitted by the multi-quantum-bit well aluminium gallium nitride layer into the emergent light of white light.
Description
Technical field
The present invention relates to a kind of white light emitting diode, relate in particular to a kind of gallium nitride white light emitting diode with indium oxide terbium transparency conducting layer of fluorescent characteristic.
Background technology
Therefore light-emitting diode has been widely used in light emitting source and the display because of having the high efficiency characteristics of luminescence.The principle of luminosity of light-emitting diode be when utilizing forward bias voltage drop the PN between p type semiconductor layer and the N type semiconductor to connect face generation electronics electricity hole compound and convert electric energy to corresponding luminous energy, thereby produce emergent light.The outgoing light wavelength is according to the energy gap size, so p type semiconductor layer and N type semiconductor that allotment capable of using is suitably formed are big or small to realize required energy gap, and then produces required visible light.
General emergent light that light-emitting diode produces has ultraviolet composition, and the fluorescence that therefore normal utilization is added on fluorescent material in the transparent fluorescent colloid layer converts high-octane ultraviolet light to more low-energy visible light for use.Yet; The shortcoming of above-mentioned prior art is; Transparent fluorescent colloid layer has the aging problem of colloid, influences the emergent light quality of light-emitting diode, therefore; Need a kind ofly to produce the white light emitting diode of semiconductor fluorescence layer, to solve above-mentioned prior art problems with fluorescence with manufacture of semiconductor.
Summary of the invention
Main purpose of the present invention provides a kind of white light emitting diode of tool fluorescence coating; Comprise sapphire substrate, gallium nitride resilient coating, n type gallium nitride layer, the sub-potential trough aluminium gallium nitride alloy of volume layer, P type gallium nitride layer, transparency conducting layer, indium oxide terbium fluorescence coating, negative pole metal connecting layer and cathode metal articulamentum; Wherein gallium nitride resilient coating, n type gallium nitride layer, the sub-potential trough aluminium gallium nitride alloy of volume layer, P type gallium nitride layer, transparency conducting layer, indium oxide terbium fluorescence coating in regular turn storehouse on sapphire substrate; And the negative pole metal connecting layer is connected to the n type gallium nitride layer; In order to connect the negative exterior power end; The cathode metal articulamentum is positioned on the indium oxide terbium fluorescence coating and runs through indium oxide terbium fluorescence coating and be connected to transparency conducting layer; In order to connecting outside positive power source terminal so that electric current by the cathode metal articulamentum through transparency conducting layer, P type gallium nitride layer, the sub-potential trough layer of aluminium gallium nitride alloy volume, n type gallium nitride layer and the negative pole metal connecting layer that arrives, and by the sub-potential trough aluminium gallium nitride alloy of volume layer emission light; Penetrate P type gallium nitride layer, transparency conducting layer and indium oxide terbium fluorescence coating, and through having that epipolic indium oxide terbium fluorescence coating is transformed into the emergent light of white light and directive is outside.
Therefore; Light-emitting diode of the present invention need not add and form the colloid fluorescence coating in fluorescent material to the transparent colloid so that convert ultraviolet ray to visible light; But the manufacture of semiconductor of radio frequency reaction formula magnetic control sputtering plating method capable of using directly deposits the indium oxide terbium fluorescence coating with formation tool fluorescence on transparency conducting layer, produces the emergent light of tool white-light spectrum.
Description of drawings
Fig. 1 is the sketch map of the white light emitting diode of tool fluorescence coating of the present invention.
Fig. 2 is the luminescence exitation spectrum of embodiment of the invention white light emitting diode.
Fig. 3 is the luminescence exitation spectrum of another embodiment of the present invention white light emitting diode.
Fig. 4 is the electroluminescence spectrum of embodiment of the invention white light emitting diode.
Fig. 5 is the electroluminescence spectrum of the fluorescence coating of embodiment of the invention white light emitting diode.
Fig. 6 is the electroluminescence spectrum of another embodiment of the present invention white light emitting diode.
Fig. 7 is the electroluminescence spectrum of the fluorescence coating of another embodiment of the present invention white light emitting diode.
Fig. 8 is the luminous photo of 10%TIO/GaN-based LED of the present invention, and wherein electric current is 20mA.
Fig. 9 is the luminous photo of 20%TIO/GaN-based LED of the present invention, and wherein electric current is 20mA.
Embodiment
The technical staff in present technique field below cooperate Figure of description and element numbers that execution mode of the present invention is done more detailed explanation, so that can implement after studying this specification carefully according to this.
Consult Fig. 1, be the sketch map of the white light emitting diode of tool fluorescence coating of the present invention.As shown in Figure 1; The white light emitting diode of tool fluorescence coating of the present invention comprises sapphire substrate 10, gallium nitride resilient coating 20, n type gallium nitride layer 30, the sub-potential trough of volume (Multiple Quantum Well; MQW) aluminium gallium nitride alloy layer 40, P type gallium nitride layer 50, transparency conducting layer 60, indium oxide terbium fluorescence coating 70, negative pole metal connecting layer 80 and cathode metal articulamentum 90 are in order to produce white light.
Gallium nitride resilient coating 20, n type gallium nitride layer 30, the sub-potential trough aluminium gallium nitride alloy of volume layer 40, P type gallium nitride layer 50, transparency conducting layer 60 and indium oxide terbium fluorescence coating 70 in regular turn storehouse on sapphire substrate 10; And expose the n type gallium nitride layer 30 of a part; In order to being electrically connected negative pole metal connecting layer 80, and negative pole metal connecting layer 80 connects the negative terminal V-of external power sources.Cathode metal articulamentum 90 is in order to connecting the anode V+ of external power source, and is positioned on the indium oxide terbium fluorescence coating 70, and indium oxide terbium fluorescence coating 70 has through hole, thereby cathode metal articulamentum 90 can be electrically connected to transparency conducting layer 60 through this through hole.
The sub-potential trough aluminium gallium nitride alloy of volume layer 40 has the thin shape aluminium gallium nitride alloy on a plurality of alternately storehouses and different abilities rank, and the formed quantum potential trough of wherein low energy stratum capable of using is confined to together electronics and electric hole more easily, thereby can increases luminous intensity.
When electric current arrives negative pole metal connecting layer 80 by cathode metal articulamentum 90 through transparency conducting layers 60, P type gallium nitride layer 50, the sub-potential trough aluminium gallium nitride alloy of volume layer 40, n type gallium nitride layer 30; The sub-potential trough aluminium gallium nitride alloy of volume layer 40 can be launched light because of electronics electricity hole composite action; And this light penetration P type gallium nitride layer 50, transparency conducting layer 60 and indium oxide terbium fluorescence coating 70, and through having that epipolic indium oxide terbium fluorescence coating 70 is transformed into the emergent light of white light and directive is outside.
Indium oxide terbium fluorescence coating 70 of the present invention is a clear films, and its main component comprises indium oxide terbium (Terbium Indium Oxide), and chemical formula is In
2O
3: Tb, generally be called for short TIO, wherein the optimal proportion scope of indium oxide and terbium is In
2O
3: Tb=95: 5 to 5: 95.The manufacture of semiconductor of indium oxide terbium fluorescence coating 70 radio frequency reaction formula magnetic control sputtering plating methods capable of using and being deposited on the transparency conducting layer 60.
Consult Fig. 2 and Fig. 3; With clear understanding characteristics of the present invention; Wherein Fig. 2 be embodiment of the invention white light emitting diode luminescence exitation spectrum (photoluminescence, PL), and the ratio of its indium oxide and terbium is 90: 10; And Fig. 3 is the luminescence exitation spectrum of another embodiment of the present invention white light emitting diode, and the ratio of its indium oxide and terbium is 80: 20.Fig. 2 and Fig. 3 show that the optical excitation fluorescence spectrum in 10K to the 300K temperature range changes, and Fig. 2 and Fig. 3 have broad absorption characteristic near being presented at 575nm and 565nm respectively.
Consult Fig. 4 and Fig. 5, (electric current is 100mA for electroluminescence, spectrum EL), and the ratio of indium oxide and terbium is 90: 10 to be respectively the electroluminescence of embodiment of the invention white light emitting diode and fluorescence coating thereof.By knowing among Fig. 4, the white light emitting diode of this embodiment has the 385nm ultraviolet light, and by knowing among Fig. 5, its fluorescence coating has the orbital transition of 450nm to 700nm, also is the transition of D orbital to the F orbital, among the figure and indicate the wavelength of corresponding transition.
Then, consults Fig. 6 and Fig. 7, be respectively the EL spectrum of another embodiment of the present invention white light emitting diode and fluorescence coating thereof, and the ratio of indium oxide and terbium is 80: 20 that electric current is 100mA.In Fig. 6, white light emitting diode has the 385nm ultraviolet light equally, and among Fig. 7, its fluorescence coating also has the orbital transition of similar 450nm to 700nm shown in Figure 5, among the figure and indicate the wavelength of corresponding transition.
Therefore, can know by the spectrum of Fig. 2 to Fig. 7 and recognize that white light emitting diode of the present invention can produce white light really, in order to high-quality light source to be provided, applicable to the back light of display or general lighting source.Be the further concrete manifestation of the white light emitting diode of demonstration the invention described above tool fluorescence coating; Can be with reference to figure 8 and photo shown in Figure 9; Wherein Fig. 8 launches the photo of white light for the GaN white light emitting diode that comprises 10% indium oxide terbium fluorescence coating (ratio that also is indium oxide and terbium is 90: 10); And Fig. 9 is the photo that comprises the GaN white light emitting diode emission white light of 20% indium oxide terbium fluorescence coating (ratio that also is indium oxide and terbium is 80: 20), and the conducting electric current is 20mA.
The above person is merely in order to explain preferred embodiment of the present invention; Be not that attempt is done any pro forma restriction to the present invention according to this; Therefore, all have in that identical inventive principle is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (4)
1. the white light emitting diode of a tool fluorescence coating in order to produce the emergent light of white light, is characterized in that, comprises;
One sapphire substrate;
One gallium nitride resilient coating, storehouse is on this sapphire substrate;
One n type gallium nitride layer, storehouse is on this gallium nitride resilient coating;
The sub-potential trough aluminium gallium nitride alloy of volume layer, storehouse and expose the part of this n type gallium nitride layer on this n type gallium nitride layer;
One P type gallium nitride layer, storehouse is on the sub-potential trough aluminium gallium nitride alloy of this volume layer;
One transparency conducting layer, storehouse is on this P type gallium nitride layer;
One indium oxide terbium fluorescence coating, storehouse and have through hole on this transparency conducting layer;
One negative pole metal connecting layer, storehouse and are electrically connected to this transparency conducting layer through this through hole on this indium oxide terbium fluorescence coating, and this negative pole metal connecting layer gas is connected to a negative terminal of external power source; And
One cathode metal articulamentum, storehouse are on this P type gallium nitride layer, and this cathode metal articulamentum gas is connected to an anode of external power source.
2. white light emitting diode as claimed in claim 1 is characterized in that, said indium oxide terbium fluorescence coating comprises that the proportion of indium oxide and terbium is In
2O
3: Tb=95: 5 to 70: 30.
3. white light emitting diode as claimed in claim 1 is characterized in that, said indium oxide terbium fluorescence coating deposits with radio frequency reaction formula magnetic control sputtering plating method.
4. white light emitting diode as claimed in claim 1 is characterized in that, the sub-potential trough aluminium gallium nitride alloy of said volume layer has the thin shape aluminium gallium nitride alloy on a plurality of alternately storehouses and different abilities rank, and the formed quantum potential trough of low energy stratum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100616768A CN102683556A (en) | 2011-03-15 | 2011-03-15 | White-light-emitting diode with fluorescent layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100616768A CN102683556A (en) | 2011-03-15 | 2011-03-15 | White-light-emitting diode with fluorescent layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102683556A true CN102683556A (en) | 2012-09-19 |
Family
ID=46815190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100616768A Pending CN102683556A (en) | 2011-03-15 | 2011-03-15 | White-light-emitting diode with fluorescent layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102683556A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014094619A1 (en) * | 2012-12-18 | 2014-06-26 | Shenzhen Byd Auto R&D Company Limited | White led chip and method for manufacturing same |
| JP2019537255A (en) * | 2016-11-22 | 2019-12-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Method of manufacturing at least one optoelectronic semiconductor component and optoelectronic semiconductor component |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603146B1 (en) * | 1999-10-07 | 2003-08-05 | Sharp Kabushiki Kaisha | Gallium nitride group compound semiconductor light-emitting device |
| US20070159067A1 (en) * | 2006-01-09 | 2007-07-12 | Hyo Chul Yun | Light-emitting diode device generating light of multi-wavelengths |
| US7259400B1 (en) * | 2001-11-19 | 2007-08-21 | Nanocrystal Lighting Corporation | Nanocomposite photonic structures for solid state lighting |
| CN101685841A (en) * | 2008-09-26 | 2010-03-31 | 台达电子工业股份有限公司 | Light emitting diode chip |
-
2011
- 2011-03-15 CN CN2011100616768A patent/CN102683556A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603146B1 (en) * | 1999-10-07 | 2003-08-05 | Sharp Kabushiki Kaisha | Gallium nitride group compound semiconductor light-emitting device |
| US7259400B1 (en) * | 2001-11-19 | 2007-08-21 | Nanocrystal Lighting Corporation | Nanocomposite photonic structures for solid state lighting |
| US20070159067A1 (en) * | 2006-01-09 | 2007-07-12 | Hyo Chul Yun | Light-emitting diode device generating light of multi-wavelengths |
| CN101685841A (en) * | 2008-09-26 | 2010-03-31 | 台达电子工业股份有限公司 | Light emitting diode chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014094619A1 (en) * | 2012-12-18 | 2014-06-26 | Shenzhen Byd Auto R&D Company Limited | White led chip and method for manufacturing same |
| JP2019537255A (en) * | 2016-11-22 | 2019-12-19 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Method of manufacturing at least one optoelectronic semiconductor component and optoelectronic semiconductor component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101580739B1 (en) | Light emitting device | |
| CN104103659B (en) | Single crystal double light source luminous element | |
| CN103840053A (en) | Surface-plasma-enhanced quantum dot light-emitting diode device and manufacturing method thereof | |
| US8513690B2 (en) | Light emitting diode structure having two lighting structures stacked together and driven by alternating current | |
| TW200937610A (en) | Radiation-emitting device | |
| CN109671826A (en) | Light emitting diode and preparation method thereof and display device | |
| JP2016510502A (en) | Optoelectronic semiconductor chip | |
| CN102683556A (en) | White-light-emitting diode with fluorescent layer | |
| CN203607398U (en) | A highly color rendering white light LED structure | |
| CN104576628A (en) | Novel white light LED structure and manufacturing method thereof | |
| CN104576627B (en) | A kind of White LED with high color rendering property structure and preparation method thereof | |
| CN102738347B (en) | White-light LED (light-emitting diode) chip structure with self-assembly nano structure | |
| CN103545458B (en) | Lighting device and preparation method thereof | |
| CN102244175A (en) | Light emitting diode and manufacturing method thereof | |
| Lee et al. | Effective color conversion of GaN-based LEDs via coated phosphor layers | |
| Hinov et al. | Innovative LED lighting | |
| Wang | Electrically Injected Hybrid III-Nitride/Organic White LEDs with Non-Radiative Energy | |
| CN104183677B (en) | A kind of light emitting diode and its manufacture method | |
| JP5372041B2 (en) | White light-emitting diode with a phosphor layer | |
| CN103367610A (en) | High-voltage LED chip and production method thereof | |
| CN106784229B (en) | A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption | |
| CN203607399U (en) | A novel white light LED structure | |
| US20120305887A1 (en) | White light emitting diode having photoluminescent layer | |
| CN203481263U (en) | High-efficiency GaN-based ultraviolet light-emitting diode | |
| CN202797056U (en) | Gallium nitride light-emitting diode (LED) structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20151028 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |