CN103247727A - Wireless solid-state light-emitting device - Google Patents
Wireless solid-state light-emitting device Download PDFInfo
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- CN103247727A CN103247727A CN2012100897554A CN201210089755A CN103247727A CN 103247727 A CN103247727 A CN 103247727A CN 2012100897554 A CN2012100897554 A CN 2012100897554A CN 201210089755 A CN201210089755 A CN 201210089755A CN 103247727 A CN103247727 A CN 103247727A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000007787 solid Substances 0.000 claims abstract description 42
- 230000006698 induction Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000007246 mechanism Effects 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 102
- 238000004020 luminiscence type Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
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Abstract
The present invention provides a wireless solid state lighting device comprising: a substrate; a solid state lighting assembly comprising: a first type semiconductor layer disposed on the substrate; a light emitting layer disposed on a portion of the first type semiconductor layer to expose a portion of the first type semiconductor layer; a second type semiconductor layer disposed on the light emitting layer; the induction coil layer is arranged on the exposed first type semiconductor layer, surrounds the second type semiconductor layer and is respectively and electrically connected with the first type semiconductor layer and the second type semiconductor layer; and a magnetic field supply device for providing a time-varying magnetic field to the induction coil layer to generate an induction current on the induction coil layer for supplying the solid-state light-emitting component.
Description
Technical field
The present invention is relevant for light-emitting device, and particularly relevant for wireless solid luminous device.
Background technology
Size is little, power consumption is low, reaction rate reaches advantages such as long service life soon owing to having, the solid luminescent assembly, for example light-emitting diode (LEDs) has been widely used in various forms of application such as home lighting, computer peripheral equipment, communication product, traffic lights, car light.
Usually, in order to supply the solid luminescent assembly required electric power, can electrically connect the electrode of solid luminescent assembly and the connection pad on the base plate for packaging by the routing processing procedure.Yet, bonding wire may cover the light that the solid luminescent assembly sends and influence usefulness, the also risk that exists broken string and gold goal to come off, and bonding wire and relevant electric current guiding structural also are unfavorable for the size downsizing of solid luminescent assembly, make the application of solid luminescent assembly limited.
Therefore, industry is needed the solid luminescent assembly that can solve and/or improve the problems referred to above badly.
Summary of the invention
One embodiment of the invention provides a kind of wireless solid luminous device, comprising: a substrate; One solid luminescent assembly comprises: one first type semiconductor layer is arranged on this substrate; One luminescent layer, be arranged on the part this first type semiconductor layer on and this first type semiconductor layer of exposed part; One second type semiconductor layer is arranged on this luminescent layer; And a line of induction ring layer, be arranged on this exposed first type semiconductor layer, around this second type semiconductor layer, and electrically connect this first type semiconductor layer and this second type semiconductor layer respectively; And a magnetic field feeding mechanism, be used for this line of induction ring layer is provided a time-varying magnetic field and makes and produce an induced current on this line of induction ring layer, for should the solid luminescent assembly.
Description of drawings
Fig. 1 shows the vertical view of wireless solid luminous device according to an embodiment of the invention;
Fig. 2 A shows the vertical view of wireless solid luminous device according to another embodiment of the present invention;
Fig. 2 B shows the stereogram of wireless solid luminous device according to another embodiment of the present invention;
Fig. 2 C shows the profile of wireless solid luminous device according to another embodiment of the present invention;
Fig. 3 shows the circuit diagram according to the wireless solid luminous device of further embodiment of this invention;
Fig. 4 shows the profile of light-emitting device according to an embodiment of the invention;
Fig. 5 shows the profile of light-emitting device according to yet another embodiment of the invention.
Description of reference numerals:
10～light-emitting device;
30～circuit;
100～substrate;
102～semiconductor layer;
104～luminescent layer;
106～semiconductor layer;
106a, 106b～zone;
108～line of induction ring layer;
110～insulating barrier;
190～magnetic field feeding mechanism;
500～protective layer;
502～substrate.
Embodiment
Below will describe making and the occupation mode of the embodiment of the invention in detail.So it should be noted, the invention provides many inventive concepts of supplying usefulness, it can multiple specific pattern be implemented.The specific embodiment of discussing of giving an example in the literary composition only is to make and use ad hoc fashion of the present invention, and is non-in order to limit the scope of the invention.In addition, in different embodiment, may use label or the sign of repetition.These only repeat must have any association in order simply clearly to narrate the present invention, not represent between the different embodiment that discuss and/or the structure.Moreover, when address be positioned at as one first material layer on one second material layer or on the time, comprise that first material layer directly contacts with second material layer or be separated with the situation of one or more other material layers.
Fig. 1 shows the vertical view of wireless solid luminous device according to an embodiment of the invention.Fig. 4 shows the profile of light-emitting device according to an embodiment of the invention, and wherein same or analogous label is in order to indicate same or analogous assembly.
As Fig. 1 and shown in Figure 4, the wireless solid luminous device of one embodiment of the invention can comprise substrate 100 and solid luminescent assembly 10 disposed thereon.Luminescence component 10 can comprise and be arranged on first type semiconductor layer 102 in the substrate 100 and be arranged on luminescent layer 104 (please refer to Fig. 4) on first type semiconductor layer 102 of part, and wherein part first type semiconductor layer 102 is exposed and do not covered by luminescent layer 104.Luminescence component 10 also comprises second type semiconductor layer 106 that is arranged on the luminescent layer 104.
In one embodiment, substrate 100 can be the substrate that is fit to first type semiconductor layer 102 of epitaxial growth thereon, and it can for example be (but being not limited to) sapphire substrates.In another embodiment, substrate 100 can for example contain silicon base for (but being not limited to).
In one embodiment, first type semiconductor layer 102, luminescent layer 104, and second type semiconductor layer 106 can be and be suitable for through input current and luminous semiconductor layer stack.In one embodiment, first type semiconductor layer 102 can be n type semiconductor layer, and second type semiconductor layer 106 can be p type semiconductor layer.In another embodiment, first type semiconductor layer 102 can be p type semiconductor layer, and second type semiconductor layer 106 can be n type semiconductor layer.
The nitride-based semiconductor that the n type semiconductor layer that is fit to can be for example be doped with N-type impurity (or admixture) by (but being not limited to) is constituted.For example, n type semiconductor layer can comprise n type gallium nitride, N-type InGaN or aforesaid combination.The nitride-based semiconductor that the p type semiconductor layer that is fit to can be for example be doped with p type impurity (or admixture) by (but being not limited to) is constituted.For example, p type semiconductor layer can comprise P type gallium nitride, P type InGaN or aforesaid combination.In one embodiment, luminescent layer 104 can be single structure, double-heterostructure (double-hetero structure, DH), the multiple quantum trap structure (multi quantum well, MQW) or aforesaid combination.
As Fig. 1 and shown in Figure 4, luminescence component 10 also can comprise line of induction ring layer 108.Line of induction ring layer 108 can be arranged on the first exposed type semiconductor layer 102 and around second type semiconductor layer 106, and electrically connects first type semiconductor layer 102 and second type semiconductor layer 106 respectively.In one embodiment, the material of line of induction ring layer 108 is electric conducting material, for example is (but being not limited to) aluminium, copper, gold, nickel, platinum, tin or aforesaid combination.In one embodiment, line of induction ring layer 108 can be distinguished and electrically contacts first type semiconductor layer 102 and second type semiconductor layer 106.For example, line of induction ring layer 108 can be distinguished and directly contacts first type semiconductor layer 102 and second type semiconductor layer 106.It should be noted that so the embodiment of the invention is not limited thereto.In other embodiments, line of induction ring layer 108 can directly not contact first type semiconductor layer 102 and second type semiconductor layer 106 and be separated with other material layer.For example, in one embodiment, between line of induction ring layer 108 and first type semiconductor layer 102 and/or second type semiconductor layer 106 can between be separated with electrode layer, insulating barrier, resilient coating, boundary layer or aforesaid combination.
Line of induction ring layer 108 can produce induced current in order to the variation of inductive electromagnetic ripple.The electric current that produces of induction can import by first type semiconductor layer 102, luminescent layer 104 by line of induction ring layer 108, reach in the luminous storehouse that second type semiconductor layer 106 forms and luminous.
As shown in Figure 1, in one embodiment, magnetic field feeding mechanism 190 can be set in wireless solid luminous device.Magnetic field feeding mechanism 190 can be positioned at line of induction ring layer above or below or a side etc.Magnetic field feeding mechanism 190 can be used for line of induction ring layer 108 is provided time-varying magnetic field and makes on the induced electricity coil layer 108 and to produce induced current with the supply luminescence component.In one embodiment, magnetic field feeding mechanism 190 can be packaged in the same electronic installation jointly with luminescence component 10.In another embodiment, magnetic field feeding mechanism 190 is not packaged in the same electronic installation jointly with luminescence component 10.For example, the user can prepare 190 pairs of luminescence components 10 of magnetic field feeding mechanism in addition to be provided time-varying magnetic field and produces induced current, and thereby luminous for use.
The wireless solid luminous device of the embodiment of the invention can have many variations.Fig. 2 A shows the top view of wireless solid luminous device according to another embodiment of the present invention, Fig. 2 B shows the stereogram of wireless solid luminous device according to another embodiment of the present invention, and Fig. 2 C shows the profile of wireless solid luminous device according to another embodiment of the present invention, and wherein same or analogous label is in order to indicate same or analogous assembly.
Shown in Fig. 2 A-Fig. 2 C, in another embodiment, show a plurality of (for example, two) luminescence component is positioned on same first type semiconductor layer 102, second type semiconductor layer can comprise m the zone of electrical isolation each other, wherein m is the natural number greater than 1, and each zone respectively has a luminescent layer down.Shown in Fig. 2 A, second type semiconductor layer can comprise 2 regional 106a and the 106b of electrical isolation each other, and a luminescent layer 104 is respectively arranged below regional 106a and 106b.Shown in Fig. 2 A-Fig. 2 C, line of induction ring layer 108 can electrically connect regional 106a and the 106b of second type semiconductor layer.In this embodiment, the regional 106a of second type semiconductor layer, luminescent layer 104, and first type semiconductor layer 102 can form luminous storehouse jointly, and the regional 106b of second type semiconductor layer, luminescent layer 104, and first type semiconductor layer 102 can form the luminous storehouse of another reverse parallel connection jointly.
In one embodiment, even line of induction ring layer 108 because of the variation of time-varying magnetic field have various flows to electric current, the m of second type semiconductor layer one of them the luminescent layer at least in the zone of electrical isolation still can be luminous and that wireless solid luminous device is kept is lasting luminous each other.In addition, for fear of producing short circuit, in one embodiment, insulating barrier 110 can be set in the infall of line of induction ring layer 108, shown in Fig. 2 A-Fig. 2 C.
Fig. 3 shows the circuit diagram according to the wireless solid luminous device of further embodiment of this invention.When producing clockwise electric current when line of induction ring layer 108 induction time-varying magnetic fields, the LED in left side can be luminous.When producing anticlockwise electric current when line of induction ring layer 108 induction time-varying magnetic fields, the LED on right side can be luminous.
In one embodiment, can the first electrode (not shown) be set in first type semiconductor layer 102, and can the second electrode (not shown) be set in second type semiconductor layer 106.Can be separated with insulating barrier between line of induction ring layer 108 and first type semiconductor layer 102 and second type semiconductor layer 106, and cross opening in the insulating barrier and electrical first electrode and second electrode that expose of contact.
Fig. 5 shows the profile of light-emitting device according to yet another embodiment of the invention.In one embodiment, light-emitting device 10 can be arranged on the substrate 502, and is coated with protective layer 500.Protective layer 500 for example can be transparent sealing.In another embodiment, protective layer 500 can comprise that phosphor material powder, dyestuff or pigment are to adjust the color of luminescence component 10 emitted lights.
The wireless solid luminous device of the embodiment of the invention by line of induction ring layer setting and but induced field changes and luminous, (for example do not need to form in addition other electric current guiding structural, bonding wire), the light that can avoid sending is covered, and can effectively reduce the volume of light-emitting device, have more application.
It should be noted that at last: above each embodiment is not intended to limit only in order to technical scheme of the present invention to be described; Although the present invention has been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps some or all of technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a wireless solid luminous device is characterized in that, comprising:
One substrate;
One solid luminescent assembly comprises:
One first type semiconductor layer is arranged on this substrate;
One luminescent layer, be arranged on the part this first type semiconductor layer on and this first type semiconductor layer of exposed part;
One second type semiconductor layer is arranged on this luminescent layer; And
One line of induction ring layer is arranged on this exposed first type semiconductor layer, around this second type semiconductor layer, and electrically connects this first type semiconductor layer and this second type semiconductor layer respectively; And
One magnetic field feeding mechanism is used for this line of induction ring layer is provided a time-varying magnetic field and makes and produce an induced current on this line of induction ring layer, for should the solid luminescent assembly.
2. wireless solid luminous device according to claim 1, wherein this second type semiconductor layer comprises m zone that isolates each other, wherein m is the natural number greater than 1.
3. wireless solid luminous device according to claim 2, wherein this line of induction ring layer electrically connects those zones of this second type semiconductor layer.
4. according to the arbitrary described wireless solid luminous device of claim 1～3, wherein this substrate is sapphire substrates or contains silicon base.
5. wireless solid luminous device according to claim 4, wherein this first type semiconductor layer is a n type semiconductor layer and this second type semiconductor layer is a p type semiconductor layer, or this first type semiconductor layer is a p type semiconductor layer and this second type semiconductor layer is a n type semiconductor layer.
6. wireless solid luminous device according to claim 5, wherein this n type semiconductor layer is made of the nitride-based semiconductor that is doped with N-type impurity.
7. wireless solid luminous device according to claim 6, wherein this n type semiconductor layer comprises n type gallium nitride or N-type InGaN.
8. wireless solid luminous device according to claim 5, wherein this p type semiconductor layer is made of the nitride-based semiconductor that is doped with p type impurity.
9. wireless solid luminous device according to claim 8, wherein this p type semiconductor layer comprises P type gallium nitride or P type InGaN.
10. wireless solid luminous device according to claim 3, wherein this first type semiconductor layer is provided with one first electrode, respectively be provided with one second electrode on those zones of this second type semiconductor layer, this line of induction ring layer electrically connects this first electrode and those second electrodes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101103726A TWI458130B (en) | 2012-02-06 | 2012-02-06 | Wireless solid state light emitting apparatus |
| TW101103726 | 2012-02-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103247727A true CN103247727A (en) | 2013-08-14 |
| CN103247727B CN103247727B (en) | 2016-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210089755.4A Active CN103247727B (en) | 2012-02-06 | 2012-03-30 | Wireless solid-state light-emitting device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103247727B (en) |
| TW (1) | TWI458130B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104571774A (en) * | 2013-10-18 | 2015-04-29 | 太瀚科技股份有限公司 | Touch input device and induction coil thereof |
| CN105336828A (en) * | 2014-08-06 | 2016-02-17 | 山东浪潮华光光电子股份有限公司 | LED light-emitting diode applied to electromagnetically induced luminescence and preparation method of LED light-emitting diode |
| CN105576089A (en) * | 2016-01-18 | 2016-05-11 | 华南师范大学 | Magnetic induction LED chip and preparation method therefor |
| WO2016119732A1 (en) * | 2015-01-30 | 2016-08-04 | 华灿光电股份有限公司 | Light-emitting diode and manufacturing method therefor |
| CN109585322A (en) * | 2018-08-31 | 2019-04-05 | 友达光电股份有限公司 | Crystal grain detection method and system |
| US10748732B2 (en) | 2017-11-13 | 2020-08-18 | Infineon Technologies Ag | Microelectromechanical light emitter component, light emitter component and method for producing a microelectromechanical light emitter component |
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| CN101180640A (en) * | 2005-03-22 | 2008-05-14 | 格姆普拉斯公司 | Electronic module and chip card with indicator light |
| CN101238594A (en) * | 2005-08-04 | 2008-08-06 | 昭和电工株式会社 | Gallium nitride-based compound semiconductor light-emitting device |
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| JP2001008386A (en) * | 1999-06-18 | 2001-01-12 | Rohm Co Ltd | Light emitting device |
| TW201123532A (en) * | 2009-12-18 | 2011-07-01 | United Microelectronics Corp | Light emitting diode and fabricating method thereof |
| WO2011156768A2 (en) * | 2010-06-11 | 2011-12-15 | Mojo Mobility, Inc. | System for wireless power transfer that supports interoperability, and multi-pole magnets for use therewith |
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2012
- 2012-02-06 TW TW101103726A patent/TWI458130B/en active
- 2012-03-30 CN CN201210089755.4A patent/CN103247727B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101180640A (en) * | 2005-03-22 | 2008-05-14 | 格姆普拉斯公司 | Electronic module and chip card with indicator light |
| CN101238594A (en) * | 2005-08-04 | 2008-08-06 | 昭和电工株式会社 | Gallium nitride-based compound semiconductor light-emitting device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104571774A (en) * | 2013-10-18 | 2015-04-29 | 太瀚科技股份有限公司 | Touch input device and induction coil thereof |
| CN105336828A (en) * | 2014-08-06 | 2016-02-17 | 山东浪潮华光光电子股份有限公司 | LED light-emitting diode applied to electromagnetically induced luminescence and preparation method of LED light-emitting diode |
| WO2016119732A1 (en) * | 2015-01-30 | 2016-08-04 | 华灿光电股份有限公司 | Light-emitting diode and manufacturing method therefor |
| CN105576089A (en) * | 2016-01-18 | 2016-05-11 | 华南师范大学 | Magnetic induction LED chip and preparation method therefor |
| US10748732B2 (en) | 2017-11-13 | 2020-08-18 | Infineon Technologies Ag | Microelectromechanical light emitter component, light emitter component and method for producing a microelectromechanical light emitter component |
| DE102017126635B4 (en) * | 2017-11-13 | 2020-10-08 | Infineon Technologies Ag | Microelectromechanical light emitter component and method for producing a microelectromechanical light emitter component |
| CN109585322A (en) * | 2018-08-31 | 2019-04-05 | 友达光电股份有限公司 | Crystal grain detection method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103247727B (en) | 2016-08-03 |
| TW201334222A (en) | 2013-08-16 |
| TWI458130B (en) | 2014-10-21 |
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