CN105355642A - Novel LED chip interconnection structure and manufacturing method - Google Patents

Novel LED chip interconnection structure and manufacturing method Download PDF

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Publication number
CN105355642A
CN105355642A CN201510863144.4A CN201510863144A CN105355642A CN 105355642 A CN105355642 A CN 105355642A CN 201510863144 A CN201510863144 A CN 201510863144A CN 105355642 A CN105355642 A CN 105355642A
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CN
China
Prior art keywords
layer
type semiconductor
electrode
semiconductor layer
led chip
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Pending
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CN201510863144.4A
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Chinese (zh)
Inventor
易翰翔
郝锐
刘洋
许徳裕
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Guangdong Deli Photoelectric Co ltd
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Guangdong Deli Photoelectric Co ltd
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Publication date
Application filed by Guangdong Deli Photoelectric Co ltd filed Critical Guangdong Deli Photoelectric Co ltd
Priority to CN201510863144.4A priority Critical patent/CN105355642A/en
Publication of CN105355642A publication Critical patent/CN105355642A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Abstract

The invention discloses a novel LED chip interconnection structure and a manufacturing method. A photoresist layer which is formed through transparent and insulation photoresist performs protection on the LED chip, and a metal lead layer connected to the LED chip is supported and adhered, which enables the metal lead layer to be not easy to break. Because the photoresist layer is made of soft photoresist, the photoresist layer is easy to be filled between the LED chips to form a good support surface, can well reduce the voltage rise caused by the sharp rise and fall of the metal wire and has a certain adhesive force to be adhered on the metal lead layer. Besides, the resistance to impact and anti-pressure capability of the photoresist are better than the rigid materials like the SiO2, and the photoresist layer can perform protection. The invention also eliminates the two processes of layer passivation and passivation layer etching, improves the production efficiency of the LED chip and reduces the manufacturing cost. The invention also discloses a method for manufacturing the LED chip interconnection structure.

Description

Interconnect architecture of a kind of Novel LED chip and preparation method thereof
Technical field
The present invention relates to LED field, be specifically related to interconnect architecture of a kind of Novel LED chip and preparation method thereof.
Background technology
LED luminescence chip has that volume is little, energy consumption is low, the life-span is long and the advantage such as environmental protection, is widely used in lighting field.The main body of LED chip is a luminous PN junction, primarily of N type semiconductor, luminescent layer and P type semiconductor composition, described N type semiconductor and P type semiconductor is respectively arranged with metal electrode.Existing LED chip generally covers one deck passivation layer (SiO outward at luminous PN junction 2layer), shield, photoresist layer (being formed by photoresist) is arranged on outside passivation layer.Because existing LED chip needs to add passivation layer and photoresist layer respectively in manufacturing process, the photoresist layer above to metal electrode and passivation layer is also needed to etch respectively afterwards, metal electrode is exposed, operation is loaded down with trivial details, makes trouble, increases cost, simultaneously, when multiple LED chip is connected by plain conductor, series connection plain conductor evaporation over the passivation layer, due to SiO 2adhesive force low, easily make plain conductor depart from and disconnect, affect the connection between LED chip; In addition, due to SiO 2be hard material, shock resistance, measuring body ability are poor, and passivation layer can not play a protective role very well.
Summary of the invention
For overcoming the deficiencies in the prior art, the object of the present invention is to provide a kind of interconnect architecture of Novel LED chip, utilizing the photoresist of flexible material to replace the main body of passivation layer to LED chip and protecting, the metal carbonyl conducting layer of support evaporation simultaneously; In addition, present invention also offers the method for the interconnect architecture making above-mentioned Novel LED chip.
The present invention is the technical scheme solving the employing of its technical problem:
A kind of interconnect architecture of Novel LED chip, comprise substrate, described substrate is provided with at least two pieces of LED chips, described LED chip comprises the n type semiconductor layer be successively set on substrate, luminescent layer and p type semiconductor layer, wherein N type semiconductor layer segment is exposed to outside luminescent layer, the exposed region of described n type semiconductor layer is provided with N electrode, p type semiconductor layer surface is provided with P electrode, the photoresist of transparent insulation is coated with outside described substrate top surface and LED chip, and form photoresist layer by photoetching process, described photoresist layer is provided with the breach that P electrode and N electrode are exposed, described photoresist layer surface evaporation has metal carbonyl conducting layer, described metal carbonyl conducting layer two ends connect the electrode on different LED chips respectively.
As the further improvement of technique scheme, described metal carbonyl conducting layer one end connects P electrode, and the other end connects N electrode.
As the further improvement of technique scheme, described types of flexure is provided with the chip isolation strip of the insulation for separating LED chip, and described chip isolation strip insulated photo-etching rubber is filled, and plays the effect of separating LED chip.
The invention provides a kind of method making above-mentioned LED chip interconnect architecture, comprise the following steps:
S1, prepare a substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer is set gradually at types of flexure, by etching technics expose portion n type semiconductor layer and the chip isolation strip forming insulation, chip isolation strip erodes to substrate surface by dry quarter, obtains multiple LED chip separated by chip isolation strip;
S2, arrange N electrode at n type semiconductor layer exposed region, p type semiconductor layer upper surface arranges P electrode;
S3, by photoetching process, the photoresist of transparent insulation is directly overlayed outside substrate, chip isolation strip and LED chip, form photoresist layer, adopt developer solution the photoresist layer etching above P electrode and N electrode, P electrode and N electrode are come out;
S4, on photoresist layer evaporation metal conductor layer, the two ends of metal carbonyl conducting layer connect the electrode on different LED chips respectively.
Present invention also offers the another kind of method making above-mentioned LED chip interconnect architecture, comprise the following steps:
T1, prepare a substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer is set gradually at types of flexure, by etching technics expose portion n type semiconductor layer and the chip isolation strip forming insulation, chip isolation strip erodes to substrate surface by dry quarter, obtains multiple LED chip separated by chip isolation strip;
T2, by photoetching process, the photoresist of transparent insulation is directly overlayed outside substrate, chip isolation strip and LED chip, form photoresist layer, adopt developer solution that the part photoresist layer of n type semiconductor layer exposed region and p type semiconductor layer upper surface is etched away, n type semiconductor layer and p type semiconductor layer are come out;
T3, N electrode is set on the n type semiconductor layer come out, p type semiconductor layer arranges P electrode;
T4, on photoresist layer evaporation metal conductor layer, the two ends of metal carbonyl conducting layer connect the electrode on different LED chips respectively.
The invention has the beneficial effects as follows:
The present invention adopts the photoresist layer of transparent insulation directly to cover LED chip, metal carbonyl conducting layer evaporation is on photoresist layer, because photoresist layer adopts soft photoresist to be made, easily be filled in the space between LED chip, form good supporting surface, the voltage caused that significantly rises and falls that can reduce metal wire well raises, and possesses certain adhesion, can good adhesiving metal conductor layer.In addition, the shock resistance of photoresist, the SiO of measuring body energy force rate hard material 2more outstanding, photoresist layer replaces passivation layer and can better play a protective role; Photoresist layer replacement passivation layer also reduces and arranges passivation layer and etch passivation layer two procedures, improves the production efficiency of LED chip, and reduces manufacturing cost.
Accompanying drawing explanation
Be described further below in conjunction with accompanying drawing and example.
Fig. 1 is the schematic diagram of the interconnect architecture of LED chip of the present invention.
Embodiment
With reference to Fig. 1, the interconnect architecture of a kind of Novel LED chip provided by the invention, comprise substrate 10, described substrate 10 is provided with at least two pieces of LED chips, described LED chip comprises the n type semiconductor layer 20 set gradually over the substrate 10, luminescent layer 30 and p type semiconductor layer 40, wherein n type semiconductor layer 20 part is exposed to outside luminescent layer 30, the exposed region of described n type semiconductor layer 20 is provided with N electrode 52, p type semiconductor layer 40 surface is provided with P electrode 51, the photoresist of transparent insulation is coated with outside described substrate 10 upper surface and LED chip, and form photoresist layer 60 by photoetching process, described photoresist layer 60 is provided with the breach that P electrode 51 and N electrode 52 are exposed, the surperficial evaporation of described photoresist layer 60 has metal carbonyl conducting layer 70, described metal carbonyl conducting layer 70 two ends connect the electrode on different LED chips respectively, wherein one end connects P electrode 51, the other end connects N electrode 52.
In addition, the invention provides a kind of method making above-mentioned LED chip interconnect architecture, comprise the following steps: S1, prepare a substrate 10, side sets gradually n type semiconductor layer 20, luminescent layer 30, p type semiconductor layer 40 over the substrate 10, by etching technics expose portion n type semiconductor layer 20 and the chip isolation strip forming insulation, chip isolation strip erodes to substrate 10 surface by dry quarter, obtains multiple LED chip separated by chip isolation strip; S2, arrange N electrode 52 at n type semiconductor layer 20 exposed region, p type semiconductor layer 40 upper surface arranges P electrode 51; S3, by photoetching process, the photoresist of transparent insulation is directly overlayed outside substrate 10, chip isolation strip and LED chip, form photoresist layer 60, adopt developer solution that the photoresist layer 60 above P electrode 51 and N electrode 52 is etched, P electrode 51 and N electrode 52 are come out; S4, on photoresist layer 60 evaporation metal conductor layer 70, the two ends of metal carbonyl conducting layer 70 connect the electrode on different LED chips respectively.
Further, step S2 in said method and S3 can also exchange, form another kind of preparation method, comprise the following steps: T1, prepare a substrate 10, side sets gradually n type semiconductor layer 20, luminescent layer 30, p type semiconductor layer 40 over the substrate 10, by etching technics expose portion n type semiconductor layer 20 and the chip isolation strip forming insulation, chip isolation strip erodes to substrate 10 surface by dry quarter, obtains multiple LED chip separated by chip isolation strip; T2, by photoetching process, the photoresist of transparent insulation is directly overlayed outside substrate 10, chip isolation strip and LED chip, form photoresist layer 60, adopt developer solution that the part photoresist layer 60 of n type semiconductor layer 20 exposed region and p type semiconductor layer 40 upper surface is etched away, n type semiconductor layer 20 and p type semiconductor layer 40 are come out; T3, N electrode 52 is set on the n type semiconductor layer 20 come out, p type semiconductor layer 40 is arranged P electrode 51; T4, on photoresist layer 60 evaporation metal conductor layer 70, the two ends of metal carbonyl conducting layer 70 connect the electrode on different LED chips respectively.
The present invention adopts the photoresist layer 60 of transparent insulation directly to cover LED chip, metal carbonyl conducting layer 70 evaporation is on photoresist layer 60, because photoresist layer 60 adopts soft photoresist to be made, easily be filled in the space between LED chip, form good supporting surface, the voltage caused that significantly rises and falls that can reduce metal wire well raises, and possesses certain adhesion, can good adhesiving metal conductor layer 70.In addition, the shock resistance of photoresist, the SiO of measuring body energy force rate hard material 2more outstanding, photoresist layer 60 replaces passivation layer and can better play a protective role; Photoresist layer 60 replaces passivation layer and also reduces and arrange passivation layer and etch passivation layer two procedures, improves the production efficiency of LED chip, and reduces manufacturing cost.
The above, just preferred embodiment of the present invention, the present invention is not limited to above-mentioned execution mode, as long as it reaches technique effect of the present invention with identical means, all should belong to protection scope of the present invention.

Claims (5)

1. the interconnect architecture of a Novel LED chip, it is characterized in that: comprise substrate (10), (10) are provided with at least two pieces of LED chips to described substrate, described LED chip comprises the n type semiconductor layer (20) be successively set on substrate (10), luminescent layer (30) and p type semiconductor layer (40), wherein n type semiconductor layer (20) part is exposed to luminescent layer (30) outward, the exposed region of described n type semiconductor layer (20) is provided with N electrode (52), p type semiconductor layer (40) surface is provided with P electrode (51), the photoresist of transparent insulation is coated with outside described substrate (10) upper surface and LED chip, and form photoresist layer (60) by photoetching process, described photoresist layer (60) is provided with the breach that P electrode (51) and N electrode (52) are exposed, described photoresist layer (60) surperficial evaporation has metal carbonyl conducting layer (70), described metal carbonyl conducting layer (70) two ends connect the electrode on different LED chips respectively.
2. the interconnect architecture of a kind of Novel LED chip according to claim 1, is characterized in that: described metal carbonyl conducting layer (70) one end connects P electrode (51), and the other end connects N electrode (52).
3. the interconnect architecture of a kind of Novel LED chip according to claim 1, is characterized in that: described substrate (10) top is provided with the chip isolation strip of the insulation for separating LED chip.
4. make a method for the arbitrary described LED chip interconnect architecture of claims 1 to 3, it is characterized in that, comprise the following steps:
S1, prepare a substrate (10), n type semiconductor layer (20), luminescent layer (30), p type semiconductor layer (40) is set gradually in substrate (10) top, by etching technics expose portion n type semiconductor layer (20) and the chip isolation strip forming insulation, chip isolation strip erodes to substrate (10) surface by dry quarter, obtains multiple LED chip separated by chip isolation strip;
S2, arrange N electrode (52) at n type semiconductor layer (20) exposed region, p type semiconductor layer (40) upper surface arranges P electrode (51);
S3, by photoetching process, the photoresist of transparent insulation is directly overlayed outside substrate (10), chip isolation strip and LED chip, form photoresist layer (60), adopt developer solution that the photoresist layer (60) of P electrode (51) and N electrode (52) top is etched, P electrode (51) and N electrode (52) are come out;
S4, at the upper evaporation metal conductor layer (70) of photoresist layer (60), the two ends of metal carbonyl conducting layer (70) connect the electrode on different LED chips respectively.
5. make a method for the arbitrary described LED chip interconnect architecture of claims 1 to 3, it is characterized in that, comprise the following steps:
T1, prepare a substrate (10), n type semiconductor layer (20), luminescent layer (30), p type semiconductor layer (40) is set gradually in substrate (10) top, by etching technics expose portion n type semiconductor layer (2) and the chip isolation strip forming insulation, chip isolation strip erodes to substrate (10) surface by dry quarter, obtains multiple LED chip separated by chip isolation strip;
T2, by photoetching process, the photoresist of transparent insulation is directly overlayed outside substrate (10), chip isolation strip and LED chip, form photoresist layer (60), adopt developer solution that the part photoresist layer (60) of n type semiconductor layer (20) exposed region and p type semiconductor layer (40) upper surface is etched away, n type semiconductor layer (20) and p type semiconductor layer (40) are come out;
T3, N electrode (52) is set on the n type semiconductor layer come out (20), p type semiconductor layer (40) is arranged P electrode (51);
T4, at the upper evaporation metal conductor layer (70) of photoresist layer (60), the two ends of metal carbonyl conducting layer (70) connect the electrode on different LED chips respectively.
CN201510863144.4A 2015-11-30 2015-11-30 Novel LED chip interconnection structure and manufacturing method Pending CN105355642A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904285A (en) * 2019-03-11 2019-06-18 合肥彩虹蓝光科技有限公司 A kind of light-emitting diode chip for backlight unit and its manufacturing method
CN114497315A (en) * 2022-02-15 2022-05-13 中国科学院半导体研究所 LED chip structure and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894892A (en) * 2009-05-21 2010-11-24 沈育浓 LED wafer package and manufacturing method thereof
CN102368528A (en) * 2011-10-25 2012-03-07 晶科电子（广州）有限公司 Luminescent device with high heat dissipation performance and manufacturing method thereof
CN104659165A (en) * 2015-02-11 2015-05-27 山东浪潮华光光电子股份有限公司 Method for preparing GaN-based light emitting diode chip
CN205231062U (en) * 2015-11-30 2016-05-11 广东德力光电有限公司 Novel interconnected structure of LED chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894892A (en) * 2009-05-21 2010-11-24 沈育浓 LED wafer package and manufacturing method thereof
CN102368528A (en) * 2011-10-25 2012-03-07 晶科电子（广州）有限公司 Luminescent device with high heat dissipation performance and manufacturing method thereof
CN104659165A (en) * 2015-02-11 2015-05-27 山东浪潮华光光电子股份有限公司 Method for preparing GaN-based light emitting diode chip
CN205231062U (en) * 2015-11-30 2016-05-11 广东德力光电有限公司 Novel interconnected structure of LED chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904285A (en) * 2019-03-11 2019-06-18 合肥彩虹蓝光科技有限公司 A kind of light-emitting diode chip for backlight unit and its manufacturing method
CN114497315A (en) * 2022-02-15 2022-05-13 中国科学院半导体研究所 LED chip structure and preparation method thereof

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