CN114759058A

CN114759058A - Micro-LED display chip, manufacturing method thereof and related equipment

Info

Publication number: CN114759058A
Application number: CN202210418073.7A
Authority: CN
Inventors: 庄永漳
Original assignee: Leiyu Technology Co ltd
Current assignee: Leiyu Technology Co ltd
Priority date: 2022-04-20
Filing date: 2022-04-20
Publication date: 2022-07-15

Abstract

The invention provides a Micro-LED display chip, a manufacturing method thereof and related equipment, wherein the Micro-LED display chip comprises the following components: the LED epitaxial structure comprises a first substrate, an LED epitaxial structure layer and an optical device layer, wherein the LED epitaxial structure layer and the optical device layer are positioned on the first substrate; the LED epitaxial structure layer comprises a plurality of Micro-LED units which are arranged in an array, the Micro-LED units are electrically connected with the first substrate and can be independently driven, and the light emitting surface of each Micro-LED unit faces away from the first substrate; the optical device layer is positioned on the light emitting surface of the Micro-LED unit and comprises a plurality of optical devices, one optical device is arranged corresponding to one Micro-LED unit and comprises a graphical microstructure; the patterned microstructure is used for adjusting the emergent angle and the emergent area of the light rays emitted by the Micro-LED unit, so that the light rays emitted by the Micro-LED unit are emitted from the emergent surface of the Micro-LED display chip as much as possible. Based on the method, the light output quantity and the light output efficiency of the Micro-LED display chip can be improved, and the display effect of the Micro-LED display chip can be further improved.

Description

Micro-LED display chip, manufacturing method thereof and related equipment

Technical Field

The invention relates to the technical field of luminous display, in particular to a Micro-LED display chip, a manufacturing method thereof and related equipment.

Background

With the advent of Micro-LED (Micro-LED) display technology, miniaturization and high resolution of display devices such as Augmented Reality (AR) display devices, Near-eye display (NED) devices, and wearable display devices have become possible. However, the display effect of the current Micro-LED display device is to be further improved.

Disclosure of Invention

In view of the above, the present invention is directed to a Micro-LED display chip, a method for manufacturing the same, and a related device, so as to improve a display effect of the Micro-LED display device.

In a first aspect, the present invention provides a Micro-LED display chip, comprising:

a first substrate;

the LED epitaxial structure layer is positioned on the first substrate; the LED epitaxial structure layer comprises a plurality of Micro-LED units which are arranged in an array, the Micro-LED units are electrically connected with the first substrate and can be independently driven, and the light emitting surface of each Micro-LED unit is opposite to the first substrate;

the optical device layer is positioned on the light emitting surface of the Micro-LED unit; the optical device layer comprises a plurality of optical devices, one optical device is arranged corresponding to one Micro-LED unit, and the optical devices comprise patterned microstructures; the patterned microstructures are used for adjusting the emergent angle and the emergent area of the light rays emitted by the Micro-LED units.

In a second aspect, the present invention provides a method for manufacturing a Micro-LED display chip, comprising:

forming an LED epitaxial structure layer on a first substrate; the LED epitaxial structure layer comprises a plurality of Micro-LED units which are arranged in an array, the Micro-LED units are electrically connected with the first substrate and can be independently driven, and the light emitting surface of each Micro-LED unit is opposite to the first substrate;

forming an optical device layer on a light emitting surface of the Micro-LED unit; the optical device layer comprises a plurality of optical devices, one optical device is arranged corresponding to one Micro-LED unit, and the optical devices comprise patterned microstructures; the patterned microstructures are used for adjusting the emergent angle and the emergent area of the light rays emitted by the Micro-LED units.

In a third aspect, the invention provides a display device comprising a Micro-LED display chip as described in any one of the above.

In a fourth aspect, the invention provides an electronic device comprising a Micro-LED display chip as described in any one of the above or a display device as described above.

The invention provides a Micro-LED display chip, a manufacturing method thereof and related equipment.A first substrate is provided with an LED epitaxial structure layer and an optical device layer, the LED epitaxial structure layer comprises a plurality of Micro-LED units, the optical device layer comprises a plurality of optical devices, the optical devices comprise patterned microstructures, because the optical device layer is positioned on the light-emitting surface of the Micro-LED unit, each optical device is arranged corresponding to one Micro-LED unit, and the optical device or the patterned microstructure can adjust the emergent angle and the emergent area of the light rays emitted by the Micro-LED unit, so that the light emitted from the Micro-LED units is emitted from the light-emitting surface of the display device as much as possible, and therefore, the light output quantity and the light output efficiency of the Micro-LED display chip can be improved, and the display effect of the Micro-LED display chip can be further improved.

Drawings

The above and other objects, features and advantages of the present application will become more apparent by describing in more detail embodiments of the present application with reference to the attached drawings. The accompanying drawings are included to provide a further understanding of the embodiments of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. In the drawings, like reference numbers generally indicate like parts or steps.

FIG. 1 is a schematic top view of a Micro-LED display chip according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of the Micro-LED display chip shown in FIG. 1 along a cutting line AA';

FIG. 3 is a schematic top view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 4 is a schematic diagram of a possible light transmission path according to an embodiment of the present invention;

FIG. 5 is a schematic top view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 6 is a schematic top view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 7 is a schematic top view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 8 is a schematic top view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 9 is a schematic top view illustrating a Micro-LED display chip according to another embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 11 is a schematic cross-sectional view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 12 is a schematic cross-sectional view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 13 is a schematic top view of a plurality of Micro-LED units according to one embodiment of the present invention;

fig. 14 is a schematic top view of an LED epitaxial structure layer according to an embodiment of the present invention;

FIG. 15 is a schematic cross-sectional view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 16 is a schematic cross-sectional view of a Micro-LED display chip according to another embodiment of the present invention;

FIG. 17 is a flowchart of a method for fabricating a Micro-LED display chip according to an embodiment of the present invention;

fig. 18 to 30 are schematic cross-sectional structures of a Micro-LED display chip provided in an embodiment of the invention in various manufacturing processes;

FIG. 31 is a schematic cross-sectional view of a Micro-LED display chip according to another embodiment of the present invention;

fig. 32 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.

The Micro-LED display chip comprises a Micro-LED array, wherein the Micro-LED array is a high-density integrated LED array with the interval of micron order. And each Micro-LED unit in the Micro-LED array can be independently addressed and lightened as a pixel point so that the Micro-LED array displays a corresponding image.

However, because the distance between adjacent Micro-LED units is very small, and the light beams emitted by the Micro-LED units generally have a certain divergence angle, when the Micro-LED array is directly applied to the Micro-LED display chip, the light output amount and the light output efficiency of the Micro-LED display chip are low, and the display effect of the Micro-LED display chip is poor.

Based on the light emitting quantity and the light emitting efficiency of the Micro-LED display chip are improved, and the display effect of the Micro-LED display chip is improved.

As an optional implementation of the disclosure, an embodiment of the present invention provides a Micro-LED display chip, as shown in fig. 1 and fig. 2, fig. 1 is a schematic top view structure diagram of the Micro-LED display chip provided in an embodiment of the present invention, and fig. 2 is a schematic cross-sectional structure diagram of the Micro-LED display chip shown in fig. 1 along a cutting line AA', where the Micro-LED display chip includes a first substrate 10, an LED epitaxial structure layer 11, and an optical device layer 12.

The LED epitaxial structure layer 11 is located on the first substrate 10, the LED epitaxial structure layer 11 includes a plurality of Micro-LED units 110 arranged in an array, and the Micro-LED units 110 are electrically connected to the first substrate 10 and can be independently driven. Wherein the Micro-LED unit 110 may refer to a Micro-light emitting diode having an effective light emitting area of less than 100 μm, less than 50 μm, less than 10 μm, or even less than 5 μm.

The optical device layer 12 is located on the light emitting surface of the Micro-LED unit 110. The optical device layer 12 includes a plurality of optical devices 120 arranged in an array, and the optical devices 120 include patterned microstructures. The patterned Micro-structure or the optical device 120 is used for adjusting the emitting angle and the emitting area of the light emitted from the Micro-LED unit 110, so that the light emitted from the Micro-LED unit 110 is emitted from the light emitting surface of the Micro-LED display chip as much as possible.

In the embodiment of the invention, as shown in fig. 2, the light emitting surface of the Micro-LED unit 110 is a surface of a side of the Micro-LED unit 110 away from the first substrate 10, that is, the Micro-LED unit 110 emits light toward the upper side of the first substrate 10, and the optical device layer 12 is disposed on a surface of a side of the LED epitaxial structure layer 11 away from the first substrate 10. In the embodiment of the present invention, the first substrate 10 may include a substrate and a film layer formed on the substrate, and the film layer may include a buffer layer, and may also include a circuit layer including a CMOS device, a TFT device, and the like. These CMOS devices and TFT devices may constitute a driving circuit for driving the Micro-LED unit 110 in the LED epitaxial structure layer 11 to emit light. The substrate may be made of a semiconductor material such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, or indium phosphide, or may be made of a non-conductive material such as glass, plastic, or a sapphire wafer.

In the embodiment of the invention, the plurality of optical devices 120 and the plurality of Micro-LED units 110 are respectively disposed correspondingly. That is, the projection of each optical device 120 on the first substrate 10 covers at least the projection of the light emitting region of one Micro-LED unit 110 on the first substrate 10, so as to adjust the emitting angles of the light rays emitted by the plurality of Micro-LED units 110 through the plurality of optical devices 120, respectively.

As shown in fig. 1, the projection of each optical device 120 on the first substrate 10 may cover not only the projection of the light emitting region S1 of one Micro-LED unit 110 on the first substrate 10, but also the projection of the non-light emitting region S2 between the Micro-LED unit 110 and other Micro-LED units 110 on the first substrate 10.

However, the present invention is not limited thereto, and in other embodiments, as shown in fig. 3, fig. 3 is a schematic top view of a Micro-LED display chip according to another embodiment of the present invention, and a projection of each optical device 120 on the first substrate 10 covers a projection of the light emitting region S1 of only one Micro-LED unit 110 on the first substrate 10. Of course, in other embodiments, the projection of each optical device 120 on the first substrate 10 may also cover the projection of the light emitting areas of the plurality of Micro-LED units 110 on the first substrate 10, which is not described herein again.

In the embodiment of the invention, as shown in fig. 2, the light emitting surface of the Micro-LED display chip is the surface above the first substrate 10. Since the optical device layer 12 is located on the light emitting surface of the Micro-LED unit 110, the light emitted from the Micro-LED unit 110 is emitted after being reflected, refracted, scattered, or diffracted by the optical device 120, as shown in fig. 4, fig. 4 is a schematic diagram of a possible light transmission path according to an embodiment of the present invention.

Because the outgoing angle of the light after reflection, refraction, scattering or diffraction is changed, the light with a larger divergence angle is adjusted to be the light with a smaller divergence angle, the light with the larger divergence angle refers to the light with a larger included angle with the perpendicular line of the first substrate 10, and the light is emitted to the left and right sides of the first substrate 10, therefore, the light emitted to the left and right sides of the first substrate 10 in the light emitted by the Micro-LED unit 110 can be emitted to the upper side of the first substrate 10 through the optical device 120, so that the light emitted by the Micro-LED unit 110 is emitted to the upper side of the first substrate 10 as much as possible, the light is emitted from the light-emitting surface of the Micro-LED display chip as much as possible, the light-emitting amount and the light-emitting efficiency of the Micro-LED display chip can be improved, and the brightness and the contrast of the Micro-LED display chip can be improved, the display effect of the Micro-LED display chip is improved.

Moreover, as shown in fig. 4, since the optical device 120 can emit light not only from the upper surface but also from the side wall, the emitting area of the light emitted by the Micro-LED unit 110 can be increased by the optical device 120, that is, the light emitting area of the Micro-LED unit 110 is increased, so that the light can be emitted from the light emitting surface of the Micro-LED display chip as much as possible, and further the light emitting amount and the light emitting efficiency of the Micro-LED display chip can be improved, and further the brightness and the contrast of the Micro-LED display chip can be improved, and the display effect of the Micro-LED display chip can be improved.

In some embodiments of the present invention, the refractive index of the optical device layer 12 is between the refractive index of the LED epitaxial structure layer 11 and the refractive index of air. The value of the refractive index of the optical device layer 12 is set between the refractive index of the LED epitaxial structure layer 11 and the refractive index of air, so that the refractive index difference between the LED epitaxial structure layer 11 and the optical device layer 12 is reduced, and the refractive index difference between the optical device layer 12 and the air is reduced, thereby reducing the probability of total reflection of light in the process of entering the air from the LED epitaxial structure layer 11 through the optical device layer 12, and further improving the light extraction efficiency.

In some embodiments of the present invention, as shown in fig. 2, the patterned microstructure includes a plurality of columnar protrusions 1200, and the plurality of columnar protrusions 1200 are uniformly distributed on the light emitting surface of the Micro-LED unit 110 according to a predetermined pattern, so as to ensure uniformity of the emitted light. Also, the plurality of stud bumps 1200 are provided at intervals. That is, the plurality of stud bumps 1200 are discontinuous and spaced apart by the recess or groove-like gap 1201.

As shown in fig. 3, the preset pattern may be a square pattern, as shown in fig. 5, fig. 5 is a schematic top view structure diagram of a Micro-LED display chip according to another embodiment of the present invention, and the preset pattern may also be a circular pattern, and in addition, the preset pattern may also be a diamond pattern, etc. In some embodiments, the predetermined pattern is the same as the pattern of the light emitting areas of the Micro-LED units 110.

In some embodiments of the present invention, as shown in fig. 5, a projection of the stud bump 1200 on the first substrate 10 is a circle, or a projection of the stud bump 1200 on the light emitting surface of the Micro-LED unit 110 is a circle. The projection of the cylindrical protrusion 1200 may be a cylindrical protrusion or a conical protrusion. Since the light emitted by the Micro-LED unit 110 is reflected or refracted by the cylindrical protrusion or the conical protrusion and then converges toward the center of the protrusion, more light emitted to the left and right sides of the first substrate 10 can be emitted above the first substrate 10, and thus, the light emitted by the Micro-LED unit 110 can be emitted from the light emitting surface of the Micro-LED display chip as much as possible.

Certainly, the present invention is not limited thereto, and in other embodiments, as shown in fig. 6, fig. 6 is a schematic top view structure diagram of a Micro-LED display chip according to another embodiment of the present invention, a projection of the columnar protrusion 1200 on the first substrate 10 is a bar shape, or a projection of the columnar protrusion 1200 on the light-emitting surface of the Micro-LED unit 110 is a bar shape. The columnar protrusion 1200 projected as a bar may be a bar columnar protrusion or the like. Since the gaps between the stud bumps 1200 are small, a plurality of bar stud bumps may constitute a diffraction grating. Since the light emitted by the Micro-LED unit 110 is collimated after being diffracted by the diffraction grating, the light emitted to the left and right sides of the first substrate 10 can be emitted to the upper side of the first substrate 10 more, and thus the light emitted by the Micro-LED unit 110 can be emitted from the light emitting surface of the Micro-LED display chip as much as possible.

It should be noted that, as shown in fig. 3, the plurality of stud bumps 1200 in each optical device 120 may be uniformly distributed in an array. Of course, in other embodiments, the plurality of stud bumps 1200 in each optical device 120 may also be arranged in parallel along any direction, as shown in fig. 6, and the plurality of stud bumps 1200 in each optical device 120 are arranged in parallel along the left-right direction. In addition, it may be arranged in parallel in the up-down direction or in parallel in the diagonal direction of the first substrate 10. Of course, the plurality of stud bumps 1200 in each optical device 120 may be arranged in other manners as shown in fig. 5, and will not be described herein again.

In other embodiments, as shown in fig. 7, fig. 7 is a schematic top view structure diagram of a Micro-LED display chip according to another embodiment of the present invention, and a projection of the columnar bump 1200 on the first substrate 10 or on the light emitting surface of the Micro-LED unit 110 may also be square. The projection of the square columnar protrusion 1200 may be a square columnar protrusion or a trapezoidal columnar protrusion, and the like, and the shape of the columnar protrusion capable of adjusting the emitting angle of the light emitted by the Micro-LED unit 110 is within the protection scope of the present invention, and is not described herein again.

It should be noted that, in the structures shown in fig. 6 and 7, the projection of the plurality of stud bumps 1200 in each optical device 120 on the first substrate 10 may cover the projection of the light emitting region of only one Micro-LED unit 110 on the first substrate 10. Certainly, the present invention is not limited to this, in other embodiments, as shown in fig. 8 and fig. 9, fig. 8 is a schematic top view structure of a Micro-LED display chip according to another embodiment of the present invention, and fig. 9 is a schematic top view structure of a Micro-LED display chip according to another embodiment of the present invention, a projection of the plurality of columnar protrusions 1200 in each optical device 120 on the first substrate 10 may cover not only a projection of a light emitting region of one Micro-LED unit 110 on the first substrate 10, but also a projection of a non-light emitting region between the Micro-LED units 110 on the first substrate 10, which is not described herein again.

In some embodiments of the present invention, the LED epitaxial structure layer 11 may be directly located on the surface of the first substrate 10, and the light emitting device layer 12 may also be directly located on the surface of the LED epitaxial structure layer 11, as shown in fig. 2, the optical device layer 12 includes a plurality of first portions 12A and second portions 12B arranged at intervals, the first portions 12A are optical devices, and the second portions 12B are spaced portions located between the first portions 12A, and the spaced portions are non-optical devices. It is understood that the first portion 12A and the second portion 12B are a unitary structure, and both belong to the same film layer formed by the same process, i.e. the optical device layer 12 is integrally formed, and the plurality of optical devices 120 may be formed by etching the surface of the second portion 12B.

However, the present invention is not limited thereto, in other embodiments, other film layers may be further disposed between the optical device layer 12 and the LED epitaxial structure layer 11, as shown in fig. 10, fig. 10 is a schematic cross-sectional structure diagram of a Micro-LED display chip according to another embodiment of the present invention, a planarization layer 13 may be further disposed between the optical device layer 12 and the LED epitaxial structure layer 11, the planarization layer 13 covers the plurality of Micro-LED units 110, and the plurality of optical devices 120 are located on a side surface of the planarization layer 13 facing away from the first substrate 10.

The planarization layer 13 may be a transparent film or an opaque film. If the planarization layer 13 is an opaque film, the planarization layer 13 may be etched to expose the light-emitting surface of the Micro-LED units 110 and cover the non-light-emitting surface between the adjacent Micro-LED units 110.

It will be appreciated that the planarization layer 13 and the optical device layer 12 are separate structures, and belong to different film layers. Of course, other film layers such as a passivation layer and the like may also be provided between the optical device layer 12 and the LED epitaxial structure layer 11, which are not described herein again.

The materials of the light-emitting device layer 12 and the planarization layer 13 may be the same or different. For example, the material of both the light emitting device layer 12 and the planarization layer 13 is silicon dioxide, aluminum oxide, or silicon nitride, or the material of the planarization layer 13 is silicon dioxide, aluminum oxide, or silicon nitride, and the material of the light emitting device layer 12 is Su-8 photoresist or polyimide. That is, in the embodiment of the present invention, the material of the optical device layer includes silicon dioxide, aluminum oxide, silicon nitride, Su-8 photoresist, polyimide, or the like.

In other embodiments, other film layers, such as a bonding layer, may also be disposed between the LED epitaxial structure layer 11 and the first substrate 10. The LED epitaxial structure layer 11 may be adhered or bonded to the surface of the first substrate 10 through a bonding layer. As shown in fig. 11 and 12, fig. 11 is a schematic cross-sectional structure diagram of a Micro-LED display chip according to another embodiment of the present invention, fig. 12 is a schematic cross-sectional structure diagram of a Micro-LED display chip according to another embodiment of the present invention, and a bonding layer 14 is disposed between the first substrate 10 and the LED epitaxial structure layer 11. Fig. 12 differs from fig. 11 in that a planarization layer 13 is provided between the LED epitaxial structure layer 11 and the light-emitting device layer 12 in fig. 12.

As shown in fig. 11 and 12, the Micro-LED unit 110 includes a first semiconductor layer 1101, a light emitting layer 1102, a second semiconductor layer 1103, a passivation layer 1104, and a first electrode layer 1105 sequentially stacked on the first substrate 10, the passivation layer 1104 and the first electrode layer 1105 being sequentially stacked on a side surface of the second semiconductor layer 1103 facing away from the first substrate 10.

In some embodiments of the present invention, as shown in fig. 13, fig. 13 is a schematic top view structure diagram of the multiple Micro-LED units according to an embodiment of the present invention, where the light emitting layer 1102 and the second semiconductor layer 1103 of the multiple Micro-LED units 110 are discontinuously disposed, but the bonding layer 14 and the first semiconductor layer 1101 of the multiple Micro-LED units 110 are continuously disposed, so as to improve adhesion between the LED epitaxial structure layer 11 and the first substrate 10, and prevent the LED epitaxial structure layer 11 from being peeled off from the first substrate 10. Of course, the present invention is not limited thereto, and in other embodiments, the bonding layer 14 and the first semiconductor layer 1101 of the plurality of Micro-LED units 110 may also be discontinuously disposed, and are not described herein again.

If the bonding layer 14 and the first semiconductor layer 1101 are disposed continuously, as shown in fig. 12 and 14, fig. 14 is a schematic top view structure of an LED epitaxial structure layer according to an embodiment of the present invention, it should be noted that fig. 11 and 12 are both schematic cross-sectional structures along a cutting line BB' shown in fig. 14, wherein the passivation layer 1104 has an opening 1104a, the first electrode layer 1105 is electrically connected to the second semiconductor layer 1103 through the opening 1104a of the passivation layer 1104, the bonding layer 14 and the first semiconductor layer 1101 have an opening 140, the opening 140 exposes a contact 101 of a driving circuit provided on the first substrate 10, and the first electrode layer 1105 is electrically connected to the contact 101 of the driving circuit provided on the first substrate 10 through the opening 140.

The driving circuit may include a plurality of circuit units, each of which is configured to provide a driving signal to one of the Micro-LED units 110 to individually control the brightness of the Micro-LED unit 110. The signal output terminal of each circuit unit is electrically connected to one contact 101 to apply a driving voltage to the second semiconductor layer 1103 through the contact 101 and the first electrode layer 1105.

In a preferred embodiment, the second semiconductor layer 1103 is an n-type semiconductor layer, correspondingly, the first semiconductor layer 1101 is a p-type semiconductor layer, the bonding layer 14 is made of a conductive metal, the bonding layer 14 is electrically connected with the first semiconductor layer 1101, an anode voltage is applied to the bonding layer 14 and the first semiconductor layer 1101, and a cathode voltage is applied to the second semiconductor layer 1103, so that the light emitting layer 1102 of the Micro-LED unit 110 can be driven to emit light.

It is to be noted that the first semiconductor layer 1101 may be a p-type semiconductor layer, which may be formed by doping or ion implantation or the like, such as a p-type GaN or InGaN layer or the like, the first semiconductor layer 1101 may be a multilayer structure, the second semiconductor layer 1103 is an n-type semiconductor layer, which may be formed by doping or ion implantation or the like, such as an n-type GaN or InGaN layer or the like, the second semiconductor layer 1103 may be a multilayer structure, the light emitting layer 1102 is a layer in which holes supplied from the first semiconductor layer 1101 and electrons supplied from the second semiconductor layer 1103 are recombined and light of a specific wavelength is output, and the light emitting layer 1102 may have a single quantum well structure or a Multiple Quantum Well (MQW) structure and well layers and barrier layers are alternately stacked. In further embodiments of the present invention, the first semiconductor layer 1101 may be an n-type semiconductor layer, and the second semiconductor layer 1103 is a p-type semiconductor layer.

The material of the bonding layer 14 may be a conductive material, such as a metal material or a metal alloy material, specifically including Au, Sn, In, Cu, Ti, or the like. Of course, the material of the bonding layer 14 may also be a non-conductive material, such as polyimide, polydimethylsiloxane, Su-8 photoresist, or the like. It is understood that if the material of the bonding layer 14 is a non-conductive material, the bonding layer 14 cannot function as an anode with the first semiconductor layer 1101, and in this case, the anode includes only the first semiconductor layer 1101. Of course, in some embodiments, the bonding layer 14 and the first semiconductor layer 1101 may also have a second electrode layer, which may serve as an anode of the Micro-LED unit 110.

It is to be understood that the Micro-LED units 110 in the embodiment of the present invention are not limited to the structures shown in fig. 11 and 12, and in other embodiments, as shown in fig. 15, fig. 15 is a schematic cross-sectional structure of a Micro-LED display chip according to another embodiment of the present invention, the Micro-LED units 110 may further include isolation structures 1106, and the isolation structures 1106 are located between the second semiconductor layers 1103 of the adjacent Micro-LED units 110 to divide and at least electrically isolate the second semiconductor layers 1103 of the adjacent Micro-LED units 110, so as to avoid signal interference between the adjacent Micro-LED units 110.

Based on any of the above embodiments, in some embodiments of the present invention, as shown in fig. 16, fig. 16 is a schematic cross-sectional structure diagram of a Micro-LED display chip according to another embodiment of the present invention, the Micro-LED display chip further includes a wavelength conversion layer 15, the wavelength conversion layer 15 is located on a surface of the optical device layer 12, that is, on a surface of the optical device layer 12 facing away from the first substrate 10, and the wavelength conversion layer 15 is used for performing wavelength conversion on light emitted by the Micro-LED unit 110. The material of the wavelength conversion layer 15 may include a quantum dot material, a fluorescent material, or the like.

As shown in fig. 16, the wavelength conversion layer 15 includes a plurality of wavelength conversion elements 150, and a projection of any one of the wavelength conversion elements 150 on the first substrate 10 overlaps with a projection of at least one Micro-LED unit 110 on the first substrate 10, so that the plurality of wavelength conversion elements 150 respectively convert light emitted from the plurality of Micro-LED units 110.

Since the side of the optical device layer 12 facing away from the first substrate 10 has a plurality of optical devices 120, such as patterned microstructures, the surface of the optical device layer 12 facing away from the first substrate 10 is not a flat surface. The uneven surface is more closely bonded to the wavelength conversion layer 15 than the flat surface, and the wavelength conversion layer 15 may not be easily peeled off. Moreover, the uneven surface has more contact area with the wavelength conversion layer 15, so that more light emitted from the Micro-LED unit 110 enters the wavelength conversion layer 15, and the light conversion amount and the light conversion efficiency of the wavelength conversion layer 15 can be improved, wherein the effective conversion efficiency is equal to the product of the photoluminescence quantum yield (PLQY) and the light absorption amount. In addition, the optical device 120 can also improve the light output quantity and the light output efficiency of the Micro-LED display chip, so that the Micro-LED display chip has higher brightness and higher light conversion rate by combining the wavelength conversion layer 15 and the optical device 120, and has better market application prospect.

In some embodiments of the present invention, the Micro-LED unit 110 emits a first color light, and the wavelength converting element 150 is at least a first wavelength converting element for converting the first color light emitted by the Micro-LED unit 110 to a second color light. In some alternative examples, the wavelength converting element 150 includes only the first wavelength converting element, that is, the light emitted by the wavelength converting layer 15 is monochromatic. For example, the first color light is blue light, and the second color light is red light or green light.

In other alternative examples, the wavelength converting element 150 includes a first wavelength converting element for converting the first color light emitted from the Micro-LED unit 110 to a second color light and a second wavelength converting element for converting the first color light emitted from the Micro-LED unit 110 to a third color light. For example, the first color light is blue light, the second color light is red light, and the third color light is green light, the first wavelength conversion element converts the blue light into the red light, and the second wavelength conversion element converts the blue light into the green light.

Of course, the present invention is not limited in this regard and in other embodiments, the first color light emitted by the Micro-LED unit 110 may also be ultraviolet light. At this time, the wavelength conversion member 150 may include a first wavelength conversion member for converting the first color light into the second color light, such as converting the ultraviolet light into the red light, a second wavelength conversion member for converting the first color light into the third color light, such as converting the ultraviolet light into the blue light, and a third wavelength conversion member for converting the first color light into the fourth color light, such as converting the ultraviolet light into the green light, and the converted red light, blue light, and green light may be also mixed into three primary colors required for display, and also, full color display of the Micro-LED display chip may be realized.

It should be noted that the Micro-LED display chip in the embodiment of the present invention may further include an encapsulation layer and the like on a side of the light emitting device layer 10 or the wavelength conversion layer 15 away from the first substrate 10, which is not described herein again.

As another optional implementation of the disclosure, an embodiment of the present invention provides a method for manufacturing a Micro-LED display chip, as shown in fig. 17, where fig. 17 is a flowchart of the method for manufacturing a Micro-LED display chip according to an embodiment of the present invention, and the method includes:

s170: forming an LED epitaxial structure layer on a first substrate; the LED epitaxial structure layer comprises a plurality of Micro-LED units, the Micro-LED units are electrically connected with the first substrate and can be independently driven, and the light emitting surface of each Micro-LED unit is opposite to the first substrate;

in some embodiments of the present invention, the Micro-LED units may be light emitting diodes having an effective light emitting area of less than 100 μm, however, the present invention is not limited thereto, and in other embodiments, the Micro-LED units may also be light emitting diodes having an effective light emitting area of greater than 100 μm, or the like. In the embodiment of the invention, only one Micro-LED is taken as an example, and the manufacturing process of the Micro-LED display chip is explained. Next, a process of forming an LED epitaxial structure layer on a first substrate will be described with reference to fig. 18 to 24.

As shown in fig. 18, a first substrate 10 and a second substrate 20 are provided, the second substrate 20 has an LED epitaxial structure layer 11 thereon, the LED epitaxial structure layer 11 includes a second semiconductor layer 1103, a light emitting layer 1102 and a first semiconductor layer 1101 sequentially stacked on the second substrate 20, and the first substrate 10 has a driving circuit (not shown) thereon and a plurality of driving contacts 101 electrically connected to the driving circuit. The driving circuit comprises a CMOS device or a TFT device, etc., which is electrically connected to the driving contact 101 to electrically connect the driving circuit to the Micro-LED unit through the contact 101. Wherein each driving contact 101 is electrically connected to one Micro-LED unit, such that each Micro-LED unit can be driven independently.

The materials of the second substrate 20 and the first substrate 10 may be the same or different. Specifically, the material of the second substrate 20 may include a semiconductor material such as silicon, silicon carbide, gallium nitride, germanium, gallium arsenide, indium phosphide, or the like, and may also include a non-conductive material such as a glass, plastic, or sapphire wafer, or the like.

As shown in fig. 19, a bonding layer 140 is formed on the LED epitaxial structure layer 11, and a bonding layer 141 is formed on the first substrate 10. The bonding layer 140 and the bonding layer 141 may be made of the same material or different materials. For example, the material of the bonding layers 140 and 141 may be a conductive material, such as a metal or a metal alloy, or a non-conductive material, such as polyimide, polydimethylsiloxane, or Su-8 photoresist. In some embodiments, the bonding layer 140 may be a second electrode layer, which may serve as an anode of the Micro-LED unit.

As shown in fig. 20, the LED epitaxial structure layer 11 is bonded to the first substrate 10 by the bonding layer 14 formed by bonding the bonding layer 140 and the bonding layer 141, and the second substrate 20 is peeled or removed to transfer the LED epitaxial structure layer 11 onto the first substrate 10 by means of bonding through the bonding layer.

As shown in fig. 21, the LED epitaxial structure layer 11 is etched to form a plurality of Micro-LED units 110, and the Micro-LED units 110 include a first semiconductor layer 1101, a light emitting layer 1102, and a second semiconductor layer 1103 sequentially stacked on the first substrate 10. The light emitting layer 1102 and the second semiconductor layer 1103 may be etched to expose a portion of the first semiconductor layer 1101, so that the Micro-LED units 110 can emit light independently, and the first semiconductor layer 1101 and the bonding layer 14 of the Micro-LED units 110 may be disposed continuously as shown in fig. 13, so as to improve adhesion between the LED epitaxial structure layer 11 and the first substrate 10. Of course, the first semiconductor layer 1101 and the bonding layer 14 may also be discontinuously disposed, and will not be described herein. Wherein the first semiconductor layer 1101 and the bonding layer 14, which are arranged in series, may serve as a common anode for the plurality of Micro-LED units 110.

As shown in fig. 22, openings 140 are formed on the bonding layer 14 and the first semiconductor layer 1101 to expose the plurality of contacts 101 on the first substrate 10. In some embodiments, the second semiconductor layer 1103 may also be thinned, wherein the thinning may be performed by dry etching, wet etching, or chemical mechanical polishing. Wherein the thickness of the first semiconductor layer 1101, the light emitting layer 1102 and the second semiconductor layer 1103 may be between about 0.3 μm to 5 μm, 0.4 μm to 4 μm or 0.3 μm to 3 μm.

As shown in fig. 23, a passivation layer 1104 is formed on the second semiconductor layer 1103, and the passivation layer 1104 is etched to form an opening 1104a exposing a portion of the second semiconductor layer 1103. The material of the passivation layer 1104 may be silicon dioxide, aluminum oxide, silicon nitride, or the like. It is to be appreciated that if the passivation layer 1104 fills the opening 140, the passivation layer 1104 at the opening 140 may also be etched to expose the plurality of contacts 101 when the passivation layer 1104 is etched.

As shown in fig. 24, a patterned first electrode layer 1105 is formed on the surface of the passivation layer 1104, and the pattern of the first electrode layer 1105 is as shown in fig. 14, which is not repeated herein. The first electrode layer 1105 is electrically connected to the second semiconductor layer 1103 through the opening 1104a of the passivation layer 1104, and is electrically connected to the contact 101 on the first substrate 10 through the bonding layer 14 and the opening 140 of the first semiconductor layer 1101. The driving circuit may control current and voltage in the light emitting layer 1102 through the contact 101 and the first electrode layer 1105 to control brightness and the like of the Micro-LED unit 110. The material of the first electrode layer 1105 and the second electrode layer may be indium tin oxide, Cr, Ti, Pt, Au, Al, Cu, Ge, Ni, or the like.

S171: forming an optical device layer on a light emitting surface of the Micro-LED unit; the optical device layer comprises a plurality of optical devices, one optical device is arranged corresponding to one Micro-LED unit, and the optical devices comprise graphical microstructures; the patterned microstructures are used for adjusting the emergent angle and the emergent area of light rays emitted by the Micro-LED units.

The fabrication process of the optical device layer is still described with the Micro-LED as an example. In some embodiments of the present invention, the forming of the optical device layer on the light emitting surface of the Micro-LED unit 110 may include:

as shown in fig. 25, an optical device layer coating 12a is formed on the light emitting surface of the Micro-LED unit 110;

a plurality of optical devices 120 are then formed on the optical device layer coating 12a, each optical device 120 including a patterned microstructure. The optical device 120 and the patterned microstructure may be as shown in fig. 11, but are not limited thereto.

As shown in fig. 2, the optical device layer 12 may include a plurality of first portions 12A and second portions 12B arranged at intervals, where the first portions 12A are optical devices, and the second portions 12B are spaced portions between the first portions 12A, and the spaced portions are non-optical devices. It is understood that the first portion 12A and the second portion 12B are a unitary structure, and both belong to the same film layer formed by the same process, i.e. the optical device layer 12 is integrally formed, and the plurality of optical devices 120 may be formed by etching the surface of the second portion 12B.

Of course, the present invention is not limited thereto, and in other embodiments, the forming the optical device layer on the light emitting surface of the Micro-LED unit 110 may further include:

as shown in fig. 26, a planarization layer 13 and an optical device layer coating 12b are sequentially formed on the light emitting surface of the Micro-LED unit 110; a plurality of optical devices 120 are formed on the optical device layer coating 12b, each optical device 120 including a patterned microstructure. The optical device 120 and the patterned microstructure may be as shown in fig. 12, but are not limited thereto. Of course, the surface of the optical device layer 12 on the side away from the planarization layer 13 may also be etched, and a plurality of optical devices 120 are formed on the surface of the optical device layer 12, which is not described herein again.

Because the optical device layer 12 is located on the light-emitting surface of the LED epitaxial structure layer 11, and the optical device 120 or the patterned microstructure can adjust the emitting angle of the light emitted by the Micro-LED unit 110, so that the light emitted by the Micro-LED unit 110 is emitted from the light-emitting surface of the Micro-LED display chip as much as possible, the light-emitting amount and the light-emitting efficiency of the Micro-LED display chip can be improved, and the display effect of the Micro-LED display chip can be further improved.

Based on any of the embodiments described above, in some embodiments of the invention, forming a plurality of optical devices on the optical device layer coating may include:

as shown in fig. 27, a mask layer 16 is formed on the surface of the optical device layer coating 12 b;

patterning masking layer 16, wherein the pattern of masking layer 16 is the same as the pattern of plurality of optical devices 120; as shown in fig. 28, patterning masking layer 16 may include: masking layer 16 is patterned by imprinting masking layer 16 with a nano-imprint template 30 having an imprint pattern, the pattern of masking layer 16 being the same as the imprint pattern. That is, in some embodiments of the present invention, the patterned mask layer 16 may be formed by a nanoimprint process, but the present invention is not limited thereto, and in other embodiments, the patterned mask layer 16 may also be formed by spraying, screen printing, exposure, development, or the like, which is not described herein again.

As shown in fig. 29, the optical device layer coating 12b is etched using the patterned masking layer 16 as a mask to transfer the pattern of the masking layer 16 onto the optical device layer coating 12b, forming a plurality of optical devices 120 as shown in fig. 11 or 12. The mask layer 16 may be a photoresist layer, an etching stop layer, or the like.

Of course, the invention is not so limited and in other embodiments, forming a plurality of optical devices on the optical device layer coating may include: as shown in fig. 30, the optical device layer coating 12b is imprinted with a nano-imprint template 30 having an imprint pattern to transfer the imprint pattern onto the optical device layer coating 12b, forming a plurality of optical devices 120 as shown in fig. 11 or 12.

In other embodiments, the optical device layer coating 12a may also be etched in the above manner to form a plurality of optical devices 120, which is not described herein again.

It is understood that the nano-imprinting stamp 30 having the stripe-shaped protrusions is only exemplified in the embodiments of the present invention, but the present invention is not limited thereto, and the nano-imprinting stamp 30 may have the column-shaped protrusions in other embodiments. The imprinting pattern of the nano-imprinting template 30 may be designed according to the pattern of the microstructure required by the optical device 120, so as to preset the pattern and arrangement of the microstructure of the optical device 120.

In some embodiments of the present invention, a nano-imprint process may be used to form a plurality of optical devices 120 including patterned microstructures, but the present invention is not limited thereto, and in other embodiments, a plurality of optical devices 120 including patterned microstructures may also be formed by spraying, screen printing, exposure, development, or the like, and will not be described herein again.

It is understood that if the material of the optical device layer 12 is a material that can be directly imprinted by the nano-imprint template 30, such as Su-8 photoresist or polyimide, the plurality of optical devices 120 may be formed by imprinting the optical device layer 12 with the nano-imprint template 30; if the optical device layer 12 is made of silicon dioxide, aluminum oxide, or silicon nitride, which may not be directly imprinted by the nano-imprinting template 30, the plurality of optical devices 120 may be formed by etching using the patterned mask layer 16 as a mask. Of course, no matter what the material of the optical device layer 12 is, the plurality of optical devices 120 may be formed by etching using the patterned mask layer 16 as a mask, which is not described herein again. In addition, in other embodiments of the present invention, a plurality of optical devices 120 may be formed in other manners, which is not described in detail.

On the basis of any one of the above embodiments, the manufacturing method provided by some embodiments of the present invention further includes:

forming a wavelength conversion layer 15 on the surface of the optical device layer 12, the structure of the wavelength conversion layer 15 may be as shown in fig. 16; the wavelength conversion layer 15 is used to wavelength-convert light emitted from the Micro-LED unit.

Since the side of the optical device layer 12 facing away from the first substrate 10 has a plurality of optical devices 120, such as patterned microstructures, the surface of the optical device layer 12 facing away from the first substrate 10 is not a flat surface. The uneven surface is more closely bonded to the wavelength conversion layer 15 than the flat surface, and the wavelength conversion layer 15 may not be easily peeled off. Moreover, the uneven surface has more contact area with the wavelength conversion layer 15, so that more light emitted from the Micro-LED unit 110 enters the wavelength conversion layer 15, and the light conversion amount and the light conversion efficiency of the wavelength conversion layer 15 can be improved, wherein the effective conversion efficiency is equal to the product of the photoluminescence quantum yield (PLQY) and the light absorption amount. In addition, since the optical device 120 can also improve the light output amount and the light output efficiency of the Micro-LED display chip, the light output amount and the light output efficiency of the Micro-LED display chip can be further improved by combining the wavelength conversion layer 15 and the optical device 120.

It should be noted that, in some embodiments of the present invention, the plurality of Micro-LED units 110 may be formed by etching the LED epitaxial structure layer 11 as shown in fig. 21, but the present invention is not limited thereto, and in other embodiments, as shown in fig. 31, fig. 31 is a schematic cross-sectional structure diagram of a Micro-LED display chip according to another embodiment of the present invention, and the LED epitaxial structure layer 11 may be divided into the plurality of Micro-LED units 110 by performing ion implantation on a region where the Micro-LED unit 110 is located, and performing example implantation on a region between adjacent Micro-LED units 110 without performing ion implantation on the region where the Micro-LED unit 110 is located. The ions to be implanted may be H +, He +, N +, O +, F +, Mg +, Ar +, etc.

It should be noted that, in the embodiment of the manufacturing method of the present invention, only the manufacturing process or steps are described, and the structure, shape, material, and the like of the device that are not described may refer to the above embodiment of the Micro-LED display chip, which is not described herein again.

As another optional implementation of the disclosure, an embodiment of the present invention further provides a display device, where the display device includes the Micro-LED display chip provided in any of the above embodiments, so as to improve a display effect of the display device through the Micro-LED display chip with higher light output amount and light output efficiency.

As another optional implementation of the disclosure, an embodiment of the present invention further provides an electronic device, where the electronic device includes the Micro-LED display chip provided in any of the embodiments, so as to improve a user experience effect of the electronic device through the Micro-LED display chip or the display device with a good display effect.

As shown in fig. 32, fig. 32 is a schematic structural diagram of an electronic device according to an embodiment of the present invention, where the electronic device may be a near-eye display device, such as an NED device, or may be AR glasses.

The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A Micro-LED display chip, comprising:

a first substrate;

2. A Micro-LED display chip according to claim 1, wherein the patterned microstructure comprises a plurality of stud bumps; the plurality of columnar bulges are uniformly distributed on the light emitting surface of the Micro-LED unit.

3. The Micro-LED display chip of claim 2, wherein the projection of the columnar bumps on the light emitting surface of the Micro-LED unit is circular or square, and the plurality of columnar bumps are arranged in a projection array on the light emitting surface of the Micro-LED unit.

4. A Micro-LED display chip according to claim 2, wherein the projections of the stud bumps on the light exit surface of the Micro-LED unit are grating-like stripes; the plurality of columnar protrusions are arranged in a projection array on the light emitting surface of the Micro-LED unit.

5. A Micro-LED display chip according to claim 1, wherein a planarization layer is provided between said optical device layer and said LED epitaxial structure layer, said planarization layer covering said plurality of Micro-LED units.

6. A Micro-LED display chip according to claim 1, wherein the material of the optics layer comprises silicon dioxide, aluminum oxide, silicon nitride, Su-8 photoresist or polyimide.

7. A Micro-LED display chip according to claim 1, wherein said optical device layer comprises a plurality of spaced apart first portions and second portions, said first portions being optical devices and said second portions being spaced apart portions between said optical devices, said spaced apart portions being non-optical devices, said optical device layer being integrally formed.

8. A Micro-LED display chip according to claim 1, wherein a bonding layer is provided between the first substrate and the LED epitaxial structure layer;

the Micro-LED unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked on the first substrate; the first semiconductor layers of the Micro-LED units are continuously arranged;

the first substrate is provided with a driving circuit and a plurality of driving contacts electrically connected with the driving circuit, and one driving contact corresponds to one Micro-LED unit; the Micro-LED unit further comprises a first electrode layer on the second semiconductor layer; the bonding layer and the LED epitaxial structure layer are provided with openings for exposing the driving contacts; the first electrode layer is electrically connected to the driving contact through the opening.

9. A Micro-LED display chip according to claim 1, further comprising:

a wavelength converting layer at a surface of the optical device layer; the wavelength conversion layer is used for performing wavelength conversion on light emitted by the Micro-LED units.

10. A Micro-LED display chip according to claim 9, wherein the wavelength converting layer comprises a plurality of wavelength converting elements; the projection of any one of the wavelength converting elements on the first substrate overlaps with at least the projection of one of the Micro-LED units on the first substrate;

the wavelength conversion element comprises at least a first wavelength conversion element for converting first color light emitted by the Micro-LED unit into second color light.

11. A Micro-LED display chip according to claim 10, wherein the wavelength converting element further comprises a second wavelength converting element; the second wavelength conversion element is used for converting the first color light emitted by the Micro-LED unit into third color light.

12. A Micro-LED display chip according to claim 11, wherein the wavelength converting element further comprises a third wavelength converting element; the third wavelength conversion element is used for converting the first color light emitted by the Micro-LED unit into fourth color light.

13. A manufacturing method of a Micro-LED display chip is characterized by comprising the following steps:

14. The method as claimed in claim 13, wherein forming an optical device layer on the light emitting surface of the Micro-LED unit comprises:

forming an optical device layer coating on the light emitting surface of the Micro-LED unit;

forming a plurality of optical devices on the optical device layer coating.

15. The method as claimed in claim 13, wherein the forming an optical device layer on the light emitting surface of the Micro-LED unit comprises:

sequentially forming a planarization layer and an optical device layer coating on the LED epitaxial structure layer;

forming a plurality of optical devices on the optical device layer coating.

16. A method of making according to claim 14 or 15, wherein forming a plurality of optical devices on the optical device layer coating comprises:

forming a mask layer on the surface of the optical device layer coating;

patterning the mask layer, wherein the pattern of the mask layer is the same as the patterns of the optical devices; wherein the patterning the mask layer comprises: imprinting the mask layer by adopting a nano imprinting template with an imprinting pattern to pattern the mask layer, wherein the pattern of the mask layer is the same as the imprinting pattern;

and etching the optical device layer coating by taking the patterned mask layer as a mask so as to transfer the pattern of the mask layer to the optical device layer coating, so that the optical device layer coating forms the plurality of optical devices.

17. A method of making according to claim 14 or 15, wherein forming a plurality of optical devices on the optical device layer coating comprises:

imprinting the optical device layer coating with a nano-imprinting stamp having an imprinting pattern to transfer the imprinting pattern onto the optical device layer coating such that the optical device layer coating forms the plurality of optical devices.

18. The method of manufacturing according to claim 13, further comprising:

forming a wavelength conversion layer on the surface of the optical device layer; the wavelength conversion layer is used for performing wavelength conversion on light emitted by the Micro-LED units.

19. The method of manufacturing of claim 13, wherein the forming of the LED epitaxial structure layer on the first substrate comprises:

providing the first substrate and a second substrate, wherein the second substrate is provided with an LED epitaxial structure layer;

transferring the LED epitaxial structure layer to the first substrate in a bonding layer bonding mode;

removing the second substrate;

etching or ion-implanting the LED epitaxial structure layer to form a plurality of Micro-LED units, wherein each Micro-LED unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked on the first substrate; the first semiconductor layers of the Micro-LED units are continuously arranged;

the first substrate is provided with a driving circuit and a plurality of driving contacts electrically connected with the driving circuit, and one driving contact is arranged corresponding to one Micro-LED unit;

forming an opening exposing the driving contact on the bonding layer and the LED epitaxial structure layer;

and forming a first electrode layer on the second semiconductor layer, wherein the first electrode layer is electrically connected with the driving contact of the first substrate through the opening.

20. A display device comprising a Micro-LED display chip according to any one of claims 1 to 12.

21. An electronic device, comprising a Micro-LED display chip according to any one of claims 1 to 12 or a display device according to claim 20.