KR20170058486A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR20170058486A
KR20170058486A KR1020150161713A KR20150161713A KR20170058486A KR 20170058486 A KR20170058486 A KR 20170058486A KR 1020150161713 A KR1020150161713 A KR 1020150161713A KR 20150161713 A KR20150161713 A KR 20150161713A KR 20170058486 A KR20170058486 A KR 20170058486A
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KR
South Korea
Prior art keywords
light emitting
emitting device
semiconductor light
device chip
semiconductor
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Application number
KR1020150161713A
Other languages
Korean (ko)
Inventor
박은현
전수근
김경민
정동소
우경제
Original Assignee
주식회사 세미콘라이트
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Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Priority to KR1020150161713A priority Critical patent/KR20170058486A/en
Priority to US15/018,425 priority patent/US10008648B2/en
Priority to CN201610112045.7A priority patent/CN106571418B/en
Priority to PCT/KR2016/011326 priority patent/WO2017061844A1/en
Publication of KR20170058486A publication Critical patent/KR20170058486A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a body including a bottom portion, the body including at least one hole formed in a bottom portion thereof; A semiconductor light emitting device chip disposed in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers which generate light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers; And a sealing material covering the semiconductor light emitting device chip, wherein the upper surface of the bottom of the body includes at least one of a concave portion and a convex portion.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having improved light extraction efficiency.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of holes, and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30 is etched to serve as a bonding pad Electrode 80 (e.g., a Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the substrate 10 side is electrically connected to the outside, it functions as a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it functions as a mounting surface. The semiconductor light emitting device chip of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Here, the height reference may be a height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140. The cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength converting material 160. [ The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 3 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but it is also possible to manufacture the semiconductor light emitting device of FIG. 3 using the semiconductor light emitting device chip shown in FIGS. 1 and 2 have. However, the semiconductor light emitting device 100 shown in FIG. 3 requires bonding between the semiconductor light emitting device chip 150 and the lead frames 110 and 120, and in particular, when the flip chip shown in FIG. 2 is used, , 120), there is a problem that the amount of light emitted from the flip chip is likely to be lost by a bonding material (for example, solder paste). Further, due to the heat generated during the SMT process of bonding the semiconductor light emitting device 100 to an external substrate (e.g., a PCB substrate, a submount, and the like), there is a problem in bonding between the semiconductor light emitting device chip 150 and the lead frames 110 and 120 .

The present disclosure provides a semiconductor light emitting device in which an electrode of a semiconductor light emitting device chip used in a semiconductor light emitting device is directly bonded to an external substrate. In particular, it is an object of the present invention to provide a semiconductor light emitting device which does not require a junction between a lead frame and a flip chip so that there is no loss in the amount of light emitted from the flip chip due to bonding between the lead frame and the flip chip.

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a body including a bottom portion, the body including at least one hole formed in a bottom portion thereof; A semiconductor light emitting device chip disposed in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers which generate light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers; And a sealing material covering the semiconductor light emitting device chip, wherein an upper surface of the bottom of the body includes at least one of a concave portion and a convex portion.

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
5 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
6 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
7 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
10 is a view showing various embodiments of a stiffener in a semiconductor light emitting device according to the present disclosure;
11 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
12 is a view showing an example of a semiconductor light emitting device chip used in a semiconductor light emitting device according to the present disclosure,
13 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
14 is a view showing a method of manufacturing a semiconductor light emitting device according to the present disclosure,
15 is a view showing another manufacturing method of the semiconductor light emitting device according to the present disclosure,
16 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
17 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
18 is a view showing various embodiments of the top surface of the body bottom in the semiconductor light emitting device according to the present disclosure,
19 is a view for explaining a principle in which light extraction is improved when an upper surface of a body bottom portion of the semiconductor light emitting device according to the present disclosure includes at least one of a concave portion and a convex portion.

The present disclosure will now be described in detail with reference to the accompanying drawings.

4 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

Fig. 4 (a) is a perspective view, and Fig. 4 (b) is a sectional view along AA '.

The semiconductor light emitting device 200 includes a body 210, a semiconductor light emitting device chip 220, and an encapsulant 230.

The body 210 includes a sidewall 211 and a bottom 212. The bottom portion 212 includes a hole 213. And a cavity 214 formed by the side wall 211 and the bottom portion 212. The bottom portion 212 includes a top surface 215 and a bottom surface 216. The side wall 211 includes an outer surface 217 and an inner surface 218. The height H of the side wall 211 may be less than the length L of the bottom portion 212. [ For example, the height H of the side wall 211 may be 0.1 mm or more and 0.6 mm or less, and the length L of the bottom portion 212 may be 0.5 mm or more. The side wall 211 may also be omitted (not shown) if necessary. The size of the hole 213 may be approximately the same as the size of the semiconductor light emitting device chip 220 or 1.5 times the size of the semiconductor light emitting device chip 220. Further, the side surface 240 of the hole 213 is preferably inclined for improving the light extraction efficiency.

The semiconductor light emitting device chip 220 is located in the hole 213. The semiconductor light emitting device chip 220 may be a lateral chip, a vertical chip, and a flip chip. However, the flip chip is preferable in that the electrode 221 of the semiconductor light emitting device chip is exposed in the direction of the bottom surface 212 of the body 210 in the present disclosure. The height 219 of the bottom 212 is preferably lower than the height 222 of the semiconductor light emitting device chip 220. If the height 219 of the bottom part 212 is higher than the height 222 of the semiconductor light emitting device chip 220, the light extraction efficiency of the semiconductor light emitting device 200 may deteriorate. However, the height 219 of the bottom part 212 may be higher than the height of the semiconductor light emitting device chip 220 in consideration of the optical path and the like. The height 219 of the bottom portion 212 and the height 222 of the semiconductor light emitting device chip 220 can be measured based on the bottom surface 216 of the bottom portion 212. The height 222 of the semiconductor light emitting device chip 220 may be 0.05 mm or more to 0.5 mm or less. The height 219 of the bottom portion 212 may be greater than or equal to 0.08 mm and less than or equal to 0.4 mm.

The encapsulant 230 is provided at least in the cavity 214 to cover the semiconductor light emitting device chip 220 so that the semiconductor light emitting device chip 220 located in the hole 213 can be fixed to the body 210. The sealing material 230 has a light-transmitting property, and may be made of one of, for example, an epoxy resin and a silicone resin. And may include a wavelength conversion material 231 if necessary. The wavelength converting material 231 may be any material as long as it converts light generated from the active layer of the semiconductor light emitting device chip 220 into light having a different wavelength (for example, pigment, dye, etc.) For example, YAG, (Sr, Ba, Ca) 2 SiO 4 : Eu, etc.) is preferably used. Further, the wavelength converting material 231 can be determined according to the color of light emitted from the semiconductor light emitting element, and is well known to those skilled in the art.

5 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 includes a bonding portion 330. Except for the junction 330, has the same characteristics as the semiconductor light emitting device 200 described in FIG. The joining portion 330 is located on the lower surface 312 of the bottom portion 311 of the body 310. But is spaced apart from the electrode 321 of the semiconductor light emitting device chip 320 exposed in the direction of the lower surface 312 of the bottom portion 311 of the body 310. When the semiconductor light emitting device 300 is bonded to the external substrate due to the bonding portion 330, the bonding strength can be improved as compared with the case where the semiconductor light emitting device 300 is bonded only by the electrode 321. The junction 330 may be a metal. For example, the junction 330 may be one of silver (Ag), copper (Cu), and gold (Au). The abutment 330 may also be a combination of two or more metals. For example, a combination of nickel (Ni) and copper, a combination of chromium (Cr) and copper, a combination of titanium (Ti) and copper. Various combinations of junctions 330 are possible to the extent that those skilled in the art can easily modify them. 5 (b) is a bottom view of FIG. 5 (a), and the arrangement of the electrode 321 and the bonding portion 330 can be confirmed. Although not shown, if necessary, the bonding portion 330 may be disposed in contact with the electrode 321 of the semiconductor light emitting device chip 320 to perform an electrode function.

6 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 includes a reflective material 430 between the bottom portion 411 of the body 410 and the semiconductor light emitting device chip 420. Except for the reflective material 430, has the same characteristics as the semiconductor light emitting device 300 described in FIG. The reflective material 430 is positioned on the side surface of the semiconductor light emitting device chip 420 to reflect the light emitted from the side surface of the semiconductor light emitting device chip 420 to improve the light extraction efficiency of the semiconductor light emitting device 400. Reflective material 430 is preferably a white reflective material. For example, a white silicone resin. The reflective material 430 may be positioned between the reflective material 430 and the semiconductor light emitting device chip 420 as shown in FIG. 6 (b).

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 500 includes a reflective layer 530 on at least one of the inner surface 513 of the side wall 511 of the body 510 and the upper surface 514 of the bottom portion 512. Except for the reflective layer 530, has the same characteristics as the semiconductor light emitting device 300 described in FIG. The reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512 of the body 510. The reflective layer 530 may be, for example, aluminum (Al), silver (Ag), distributed Bragg reflector (DBR), high reflective white reflective material, or the like. In particular, since the semiconductor light emitting device chip 150 must be bonded to the lead frames 110 and 120 in the conventional semiconductor light emitting device 100 as shown in FIG. 3, Can not be formed on the entire upper surface of the lead frames 110 and 120 to be bonded due to an electric short problem. However, in the present disclosure, since there is no lead frame bonded to the semiconductor light emitting device chip 520 and the semiconductor light emitting device chip 520 is not disposed on the upper surface 514 of the bottom portion 512, A reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512. The light extraction efficiency of the semiconductor light emitting device 500 can be improved by forming the reflective layer 530 of high reflection efficiency on the entire upper surface 514 of the bottom portion 512. Although not shown, the reflective layer 530 may be located on the side of the hole.

8 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 600 includes a plurality of holes 612 in a bottom portion 611 of the body 610 and the semiconductor light emitting device chip 620 is positioned in each hole 612. The semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 described in FIG. 5 except that the semiconductor light emitting device chip 620 is located in the plurality of holes 612 and the holes 612. Although two holes are shown in Fig. 8, two or more holes are possible. Further, the semiconductor light emitting device chips 620 located in the respective holes 612 can emit different colors.

9 is a view showing another example of the semiconductor light emitting device according to the present disclosure. 9 (a) is a bottom view, and Fig. 9 (b) is a perspective view.

The semiconductor light emitting device 700 includes a reinforcing member 720. Except for the reinforcing material 720, has the same characteristics as those of the semiconductor light emitting device 200 described in Fig. The number of the reinforcing members 720 may be plural. The semiconductor light emitting device chip 730 located in the holes 711 and the holes 711 may be positioned between the reinforcing members 720 when the reinforcing member 720 is two as shown in FIG. It is preferable that the reinforcing member 720 and the hole 711 are arranged so as not to overlap each other. The reinforcing member 720 can compensate for the problem of breaking the body 710 due to warping or bending of the body 710. The reinforcing material 720 is preferably a metal. The stiffener 720 may be the lead frame described in Fig. The stiffener 720 positioned as shown in Fig. 9 (a) and the stiffener 720 positioned as shown in Figs. 10 (b) through 10 (c) may also have the function of the joint shown in Fig.

10 is a view showing various embodiments of a stiffener in the semiconductor light emitting device according to the present disclosure. 10 (a) to 10 (c) are perspective views, and FIG. 10 (d) is a bottom view.

10A-10C illustrate various embodiments of the stiffener 720 in which the stiffener 720 is positioned differently between the upper surface 712 and the lower surface 713 of the bottom of the body 710 Giving. The stiffener 720 of FIG. 10 (a) is fully inserted into the body 710. 10B shows that the lower surface 721 of the stiffener 720 coincides with the lower surface 713 of the bottom of the body 710. The reinforcing member 720 shown in FIG. 10C shows that a part of the reinforcing member 720 protrudes from the lower surface 713 of the bottom of the body 710. 10 (d), the stiffener 720 is formed in both the longitudinal direction and the longitudinal direction of the body 710, unlike the case of FIG. 9 (a) in which the stiffener 720 is formed in the longitudinal direction of the body 710 . That is, it is preferable that the reinforcing member 720 is formed as wide as possible so as not to overlap with the hole of the body 710, for example, a problem of breaking the body 710 due to warping or bending of the body 710.

11 is a view showing another example of the semiconductor light emitting device according to the present disclosure. 11 (a) and 11 (c) are bottom plan views, and FIG. 11 (b) is a sectional view taken along line AA 'of FIG. 11 FIG.

11A and 11B, the semiconductor light emitting device 700 including the stiffener 720 may include a protection element 730 for protecting the semiconductor light emitting device chip 730 from static electricity or reverse current, (E. G., A zener diode, a pn diode). Also, as shown in Fig. 11 (b), the protection element 740 is inserted into the stiffener 720. The protection element 740 is covered with a white silicone resin 750, for example, except for the electrode 741 of the protection element 740. 11 (b) shows the upper surface 712 of the bottom of the body 710 in order to clarify the positional relationship of the protection element 740. FIG. However, since the size of the protection element 740 is small, it may be difficult to mount the protection element 740 directly on the electrode of the external substrate. To solve this problem, the protection element 740 is formed on the body 710 as shown in FIGS. 11C and 11D. ) Can be inserted. The electrode 741 of the protection element 740 is positioned over the shorted stiffener 720 and is electrically connected to the stiffener 720. The protection element 740 is covered with a white silicone resin 750. The stiffener 720 is connected to the electrode of the external substrate together with the semiconductor light emitting device chip 730. In order to prevent short-circuiting, the stiffener described in Fig. 11 (c) is short-circuited (722). The protective elements 740 shown in FIGS. 11A and 11C are electrically connected in parallel to the semiconductor light emitting device chip 730 in an opposite direction through the electrodes of the external substrate. 11 (a), the protection element 740 is electrically connected directly to the external substrate. In FIG. 11 (c), the protection element 740 is electrically connected to the external substrate through the stiffener 720. The electrode arrangement of the external substrate in which the semiconductor light emitting device chip 730 and the protection device 740 are electrically connected in parallel in reverse direction in FIGS. 11 (a) and 11 (c) is easy for a person skilled in the art.

12 is a view showing an example of a semiconductor light emitting device chip used in the semiconductor light emitting device according to the present disclosure.

Fig. 12 (a) is a perspective view, and Fig. 12 (b) is a sectional view taken along AA '.

The semiconductor light emitting device chip 800 used in the semiconductor light emitting device according to the present disclosure includes a non-light emitting growth substrate 810 and a semiconductor light emitting portion 820.

The non-transmissive growth substrate 810 may include a cavity 830 such that the upper side 821 of the plurality of semiconductor layers 822 is exposed. Since the non-transmissive growth substrate 810 is non-transmissive, the light emitted from the semiconductor light emitting portion 820 goes upward through the cavity 830. The cavity 830 can be obtained through an etching process. It is preferable that the side surface 831 of the cavity 830 is inclined so as to reflect the light emitted from the semiconductor light emitting portion 820 and to exit to the upper side. The side surface 831 of the cavity 830 may also include a reflective layer 832 to improve the efficiency of light reflection. The material of the reflective layer 832 can be any material with good reflection efficiency. For example, aluminum (Al), silver (Ag), and distributed Bragg reflector (DBR). In addition, the cavity 830 may be filled with the transparent encapsulant 840. The translucent encapsulant 840 may include a resin 841 and a wavelength converting material 842. The wavelength converting material 842 may be any material as long as it converts light emitted from the semiconductor light emitting portion 820 to light having a different wavelength (for example, pigment, dye, etc.) (Sr, Ba, Ca) 2 SiO 4: Eu is preferred to use, and so on). As the resin 841, an epoxy resin, a silicone resin, or the like can be used. Further, the translucent encapsulant 840 may further contain a light scattering material and the like. As the non-light-transmitting growth substrate 810, a silicon growth substrate is preferable. The semiconductor light emitting portion 820 includes a plurality of semiconductor layers 822, a first electrode 826, and a second electrode 827. The plurality of semiconductor layers 822 includes a first semiconductor layer 823 having a first conductivity that grows below the non-light-emitting growth substrate 810, a second semiconductor layer 825 having a second conductivity different from the first conductivity, And an active layer 824 interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes. Although not shown, may include additional layers including a buffer layer as required. The upper side 821 of the plurality of semiconductor layers 822 exposed by the cavity 830 may be the first semiconductor layer 823 but the upper side 821 of the plurality of semiconductor layers 822 exposed when the buffer layer is included ) May be a buffer layer. The first electrode 826 is in electrical communication with the first semiconductor layer 823 and supplies one of electrons and holes. The first electrode 826 may be directly connected to the first semiconductor layer 823 as shown in FIG. 2, but the first electrode 826 may be electrically connected to the first semiconductor layer 823 through a separate electrical path 828 < / RTI > To prevent the first electrode 826 from contacting the second semiconductor layer 825 when the first electrode 826 is in electrical communication with the first semiconductor layer 823 through the electrical passageway 828 The semiconductor light emitting portion 820 may include an insulating layer 850 formed between the second semiconductor layer 825 and the first electrode 826 and on the side surface of the electrical path 828. The second electrode 827 is in electrical communication with the second semiconductor layer 825 and supplies either electrons or holes. The second electrode 827 electrically connects the second electrode 827 and the second semiconductor layer 825 to the second semiconductor layer 825 when the insulating layer 850 is positioned between the second semiconductor layer 825 and the second electrode 827. [ And an electrical pathway 829 for connecting to each other. The first electrode 826 and the second electrode 827 are located below the plurality of semiconductor layers 822. An insulating layer 850 formed between the first electrode 826 and the second electrode 827 and the plurality of semiconductor layers 822 may be a reflective layer for enhancing the reflection efficiency. When the insulating layer 850 functions as a reflective layer, light exiting to a portion where the first electrode 826 and the second electrode 827 are not formed can also be reflected. The insulating layer 850 having a reflecting function can be referred to as a non-conductive reflective film 850, and the non-conductive reflective film is described in detail in Korean Patent Publication No. 10-1368720. Alternatively, a metal reflection layer may be formed on the plurality of semiconductor layers 222 although not shown. Methods of forming the metal reflective layer are well known to those skilled in the art and are not described separately. 12 (c), a reflection wall 860 for reflecting light on the side of the semiconductor light emitting portion 820 in the semiconductor light emitting device chip 800 is added. Light emitted from the semiconductor light emitting device chip 800 can be emitted only through the cavity 830 by the non-light-emitting growth substrate 810, the reflecting wall 860, and the insulating layer 850 having a reflecting function.

13 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

FIG. 13 (a) is a view showing an example of a semiconductor light emitting device capable of realizing white light of various colors and various color temperatures as a semiconductor light emitting device according to the present disclosure and having excellent color rendering property.

The semiconductor light emitting device 900 described in FIG. 13A includes a plurality of holes 912 in the bottom portion 911 of the body 910, and the semiconductor light emitting device chips 800) may be located. The semiconductor light emitting device chip 800 emits light through the cavity 830 of the non-transmissive growth substrate 810. In particular, when the reflective wall 860 is positioned on the side surface of the semiconductor light emitting device chip 800 as shown in FIG. 12C, light emitted from the semiconductor light emitting device chip 800 can be emitted only through the cavity 830 . The cavity 830 of the semiconductor light emitting device chip 800 located in each of the plurality of holes 912 is formed in the cavity 830 so that the semiconductor light emitting device chip 800 located in each of the plurality of holes 912 emits different light. It is possible to use a wavelength converting material 842 which emits different colors. For example, when three semiconductor light-emitting device chips 800 are provided as shown in FIG. 13 (a), one may emit blue light, one emit green light, and the other one may emit red light . In particular, when light emitted from the semiconductor light emitting device chip 800 can be emitted only through the cavity 830 or when there is a reflective material between the semiconductor light emitting device chip 800 and the bottom portion 911 as shown in FIG. Light emitted from the plurality of semiconductor light emitting device chips 800 may not affect each other. The wavelength conversion material 842 in the cavity 830 of each semiconductor light emitting device chip 800 may not be affected. Accordingly, white light of various colors and various color temperatures with high color purity can be realized, and a semiconductor light emitting device having excellent color rendering properties can be obtained. Further, since the wavelength conversion material 842 is included in the semiconductor light emitting device chip 800, the sealing material 920 may not include the wavelength conversion material. The remaining characteristics which are not described in FIG. 13 (a) are the same as those of the semiconductor light emitting device 600 described in FIG.

The semiconductor light emitting device 1000 described in FIG. 13B includes a plurality of holes 1120 in the bottom 1110 of the body 1100, and the semiconductor light emitting device 1200 is positioned in each hole 1120 can do. Also, the body 1100 includes a partition 1130 between the plurality of holes 1120. A plurality of cavities 1140 corresponding to the plurality of holes 1120 are formed by the partition walls 1130. Different wavelength conversion materials 1310 and 1320 can be used for the plurality of cavities 1140. For example, as shown in FIG. 13 (b), three semiconductor light emitting device chips 1200 emitting blue light are disposed in each of the holes 1120, and one encapsulant 1300 An encapsulant 1300 including a wavelength converting material 1310 exciting in blue and emitting green is used in one cavity 1140 and excited in blue in the other cavity 1140 to emit red light An encapsulant 1300 including a wavelength converting material 1320 which emits light can be used. Light emitted from the plurality of cavities 1140 by the barrier ribs 1130 may not mutually affect each other. In particular, light emitted from the plurality of cavities 1140 may not affect the wavelength conversion material 1310 and 1320 in each cavity 1140. Accordingly, white light of various colors and various color temperatures with high color purity can be realized, and a semiconductor light emitting device having excellent color rendering properties can be obtained. The remaining characteristics, which are not described in FIG. 13B, are the same as those of the semiconductor light emitting device 600 described in FIG.

14 is a view showing a method of manufacturing a semiconductor light emitting device according to the present disclosure.

First, a body 2000 including a hole 2110 is prepared in a bottom part 2100 (S1). The body 2000 can be obtained through injection molding. The semiconductor light emitting device chip 2200 is placed in the hole 2100 (S2). The semiconductor light emitting device chip 2200 is covered with the sealing material 2300 to fix the semiconductor light emitting device chip 2200 to the body 2000 (S3). A temporary fixing plate 2400 may be used to prevent the semiconductor light emitting device chip 2200 from moving before the semiconductor light emitting device chip 2200 is fixed with the sealing material 2300. [ The temporary fixing plate 2400 can be made of a general adhesive tape. For example, a blue tape. If there is a temporary fixing plate 2400 thereafter, the temporary fixing plate 2400 is removed and a bonding portion 2500 is formed (S4). Further, a reinforcing member (not shown) may be formed instead of the bonding portion 2500. If the stiffener is located between the top and bottom of the bottom of the body, the stiffener may be inserted when making the body. The order of the method of manufacturing a semiconductor light emitting device according to the present disclosure can be included in the scope of the present disclosure to the extent that those skilled in the art can easily change it.

15 is a view showing another manufacturing method of the semiconductor light emitting device according to the present disclosure.

14, a plurality of semiconductor light emitting devices 3000 can be manufactured at one time, as shown in FIG. For example, after a substrate 3200 having a plurality of bodies 3100 is obtained through injection molding, a plurality of semiconductor light emitting devices 3000 can be manufactured at a time according to the manufacturing method described in FIG. Then, the semiconductor light emitting device 3000 can be cut according to the cut line 3300.

16 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 4000 shown in Fig. 16A includes a body 4200 including a side wall 4110 including a protrusion 4111 and a lens 4200 formed between the protrusion 4111 and the sealing material. The protruding portion 4111 serves as a boundary stop preventing the lens 4200 from being formed beyond the protruding portion 4111 when the lens 4200 is formed. The lens 4200 can be formed using a light-transmitting resin after the step S3 of forming the sealing material in Fig. The semiconductor light emitting device 4000 shown in Fig. 16B includes a body 4100 including a protrusion 4111 and a lens 4200 formed between the protrusions 4111 and the encapsulation material do. Particularly, the body 4100 includes only the bottom portion 4120 without side walls, and the height of the bottom portion 4120 is higher than the height of the semiconductor light emitting device chip 4200. Since the light can be sufficiently diffused due to the lens 4200, the encapsulating material 4130 covering the whole of the wide bottom part 4120 and the bottom part 4120 as shown in Fig. 16 (a) . The remaining characteristics which are not described in Fig. 16 are the same as those of the semiconductor light emitting device 200 described in Fig.

17 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The upper surface 5111 of the bottom 5110 of the body 5100 includes at least one of a concave portion and a convex portion. The upper surface 5111 of the bottom portion 5110 of the body 5100 includes the concave portion as shown in Fig. 17 (a), the convex portion as shown in Fig. 17 (b) And includes a concave portion and a convex portion. The reason why the light extraction efficiency of the semiconductor light emitting device 5000 can be increased and the light extraction efficiency is increased when the top surface of the bottom portion includes at least one of the concave portion and the convex portion will be described with reference to FIG. The remaining characteristics which are not described in Fig. 17 are the same as those of the semiconductor light emitting device 300 described in Fig.

18 is a view showing various embodiments of the bottom surface of the semiconductor light emitting device according to the present disclosure.

A portion 5121 to which the concave portion of the upper surface 5111 of the bottom portion 5110 of the body 5100 and the side wall 5120 of the body 5100 are connected is not a flat surface but a curve as shown in FIG. The portion 5131 to which the concave portion of the upper surface 5111 of the bottom portion 5110 of the body 5100 and the hole 5130 of the body 5100 are connected is not a flat surface but a curve. The light extraction efficiency can be increased because the connected portions 5121 and 5131 form a curve instead of a flat surface. The upper surface 5111 of the bottom portion 5110 of the body 5100 may include a plurality of recesses as shown in FIG. 18 (b), and the recesses are smaller in size as the recesses approach the semiconductor light emitting device chip 5200 Loses. The larger the concave portion, the higher the light extraction efficiency can be. Therefore, as the large concave portion is located farther from the semiconductor light emitting device chip 5200, the smaller concave portion is located, so that the semiconductor light emitting device 5000 can emit uniform light as a whole. Although not shown in Figs. 18 (a) and 18 (b), similar characteristics can be obtained even in the case of a convex portion instead of a concave portion.

19 is a view for explaining the principle of improving light extraction when the bottom surface of the semiconductor light emitting device according to the present disclosure includes at least one of a concave portion and a convex portion.

The light 5400 emitted from the semiconductor light emitting device chip 5200 of the semiconductor light emitting device 5000 is reflected due to the refractive index difference at the boundary 5500 between the sealing material 5300 and the sealing material 5300. The reflected light 5400 is reflected as a dotted line in the concave portion of the upper surface 5111 of the bottom portion 5110 of the body 5100 and may exit the semiconductor light emitting device 5000. The upper surface 5111 of the bottom portion 5110 includes at least one of the convex portion and the concave portion when the top surface 5111 of the bottom portion 5110 is a flat surface, So that the semiconductor light emitting device 5000 can be exited and the light extraction efficiency can be increased. Preferably, the light extraction efficiency is better when the upper surface 5111 of the bottom portion 5110 includes recesses.

 Various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a body including a bottom portion, the body having at least one hole formed in a bottom portion thereof; A semiconductor light emitting device chip disposed in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers which generate light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers; And a sealing material covering the semiconductor light emitting device chip, wherein an upper surface of the body bottom portion includes at least one of a concave portion and a convex portion.

(2) An electrode of a semiconductor light emitting device chip is exposed in a bottom direction of a bottom portion of a body.

(3) The semiconductor light emitting device according to any one of (1) to (3), wherein the entire upper surface of the bottom portion includes a reflective layer.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the reflective layer is a metal layer.

(5) the concave portion and the convex portion on the upper surface of the bottom portion continuously appear.

(6) The semiconductor light emitting device according to any one of claims 1 to 6, wherein a plurality of concave portions are formed on the upper surface of the bottom portion, and the size of the concave portion becomes smaller the closer to the semiconductor light emitting device chip.

(7) at least one stiffener disposed on the body so as not to overlap the hole of the bottom of the body, and the stiffener is positioned between the upper surface and the lower surface of the bottom of the body.

(8) A semiconductor light emitting device comprising a body, including a side wall, and a cavity formed by side walls and a bottom.

(9) The semiconductor light emitting device according to any one of the preceding claims, wherein the concave portion or the convex portion on the upper surface of the bottom portion is not a flat surface.

(10) The semiconductor light emitting device according to any one of the preceding claims, wherein the concave portion or the convex portion on the upper surface of the bottom portion is not a flat surface.

(11) a body including at least one reinforcing member including a side wall and including a cavity formed by the side wall and the bottom, the reinforcing member being provided on the body so as not to overlap the hole of the bottom of the body, And the electrode of the semiconductor light emitting device chip is exposed in a bottom direction of the bottom of the body.

According to the present disclosure, a semiconductor light emitting element in which an electrode of a semiconductor light emitting element chip is directly bonded to an external substrate can be obtained.

Also, according to the present disclosure, it is possible to obtain a semiconductor light emitting device which does not require bonding between the lead frame and the flip chip so that there is no loss in the amount of light emitted from the flip chip due to the bonding between the lead frame and the flip chip.

In addition, according to the present disclosure, light that can be lost in the semiconductor light emitting device can be emitted to the outside of the semiconductor light emitting device, thereby improving light extraction efficiency.

Semiconductor light emitting devices: 100, 200, 300, 400, 500, 600, 700, 900, 1000, 3000, 4000, 5000
Semiconductor light emitting device chips: 150, 220, 320, 420, 520, 620, 730, 800, 1200, 2200, 5200
Reinforcement: 720

Claims (11)

In the semiconductor light emitting device,
A body including a bottom portion, the body having at least one hole formed in a bottom portion thereof;
A semiconductor light emitting device chip disposed in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers which generate light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers; And,
And a sealing material covering the semiconductor light emitting device chip,
Wherein the upper surface of the body bottom portion includes at least one of a concave portion and a convex portion. The method according to claim 1,
Wherein an electrode of the semiconductor light emitting device chip is exposed in a bottom direction of a bottom portion of the body. The method according to claim 1,
And the concave portion and the convex portion are continuously formed on the upper surface of the bottom portion. The method according to claim 1,
Wherein the upper surface of the bottom portion has a plurality of recesses, and the recessed portion becomes smaller as the size of the recessed portion approaches the semiconductor light emitting device chip. The method according to claim 1,
Wherein at least one of the concave portion and the convex portion of the top surface of the bottom portion is connected to the hole, and the portion is not a flat surface. The method according to claim 1,
And the entire upper surface of the bottom portion includes a reflective layer. [Claim 6]
Wherein the reflective layer is a metal layer. The method according to claim 1,
And at least one reinforcing member disposed on the body so as not to overlap the hole of the bottom of the body, wherein the reinforcing member is positioned between the upper surface and the lower surface of the bottom portion of the body. The method according to claim 1,
Body;
And a cavity formed by the side wall and the bottom portion. The method of claim 9,
Wherein a portion of at least one of the concave portion and the convex portion on the top surface of the bottom portion is connected to the side wall is not a flat surface. The method according to claim 1,
Body;
And a cavity formed by the side wall and the bottom,
And at least one reinforcing member provided on the body so as not to overlap the hole in the bottom of the body,
The stiffener is located between the upper and lower surfaces of the bottom of the body,
Wherein an electrode of the semiconductor light emitting device chip is exposed in a bottom direction of a bottom portion of the body.
KR1020150161713A 2015-10-08 2015-11-18 Semiconductor light emitting device KR20170058486A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020150161713A KR20170058486A (en) 2015-11-18 2015-11-18 Semiconductor light emitting device
US15/018,425 US10008648B2 (en) 2015-10-08 2016-02-08 Semiconductor light emitting device
CN201610112045.7A CN106571418B (en) 2015-10-08 2016-02-29 Semiconductor light emitting device
PCT/KR2016/011326 WO2017061844A1 (en) 2015-10-08 2016-10-10 Semiconductor light-emitting device

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Application Number Priority Date Filing Date Title
KR1020150161713A KR20170058486A (en) 2015-11-18 2015-11-18 Semiconductor light emitting device

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KR1020170084269A Division KR101872317B1 (en) 2017-07-03 2017-07-03 Semiconductor light emitting device
KR1020170084265A Division KR20170081622A (en) 2017-07-03 2017-07-03 Semiconductor light emitting device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190049152A (en) * 2017-11-01 2019-05-09 주식회사 세미콘라이트 Semiconductor light emitting structure and method ofmanufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190049152A (en) * 2017-11-01 2019-05-09 주식회사 세미콘라이트 Semiconductor light emitting structure and method ofmanufacturing the same

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