KR101855189B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101855189B1
KR101855189B1 KR1020160027072A KR20160027072A KR101855189B1 KR 101855189 B1 KR101855189 B1 KR 101855189B1 KR 1020160027072 A KR1020160027072 A KR 1020160027072A KR 20160027072 A KR20160027072 A KR 20160027072A KR 101855189 B1 KR101855189 B1 KR 101855189B1
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KR
South Korea
Prior art keywords
light emitting
emitting device
semiconductor light
bottom portion
inclination angle
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Application number
KR1020160027072A
Other languages
Korean (ko)
Other versions
KR20170104695A (en
Inventor
조영관
정동소
김경민
전수근
Original Assignee
주식회사 세미콘라이트
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Priority to KR1020160027072A priority Critical patent/KR101855189B1/en
Priority to US16/083,024 priority patent/US11038086B2/en
Priority to CN201780016053.4A priority patent/CN109196667B/en
Priority to PCT/KR2017/002455 priority patent/WO2017155282A1/en
Publication of KR20170104695A publication Critical patent/KR20170104695A/en
Application granted granted Critical
Publication of KR101855189B1 publication Critical patent/KR101855189B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a body including a bottom portion, the body including at least one hole formed in a bottom portion thereof; A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes and an electrode electrically connected to the plurality of semiconductor layers, Device chip; And a sealing material covering the semiconductor light emitting device chip, wherein the inner surface of the bottom portion forming the hole has a plurality of inclined angles.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having improved light extraction efficiency.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of holes, and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30 is etched to serve as a bonding pad Electrode 80 (e.g., a Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the growth substrate 10 side is electrically connected to the outside, it becomes a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. The semiconductor light emitting device chip of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Here, the height reference may be a height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140. The cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength converting material 160. [ The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 3 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but it is also possible to manufacture the semiconductor light emitting device of FIG. 3 using the semiconductor light emitting device chip shown in FIGS. 1 and 2 have. However, the semiconductor light emitting device 100 shown in FIG. 3 requires bonding between the semiconductor light emitting device chip 150 and the lead frames 110 and 120, and in particular, when the flip chip shown in FIG. 2 is used, , 120), there is a problem that the amount of light emitted from the flip chip is likely to be lost by a bonding material (for example, solder paste). Further, due to the heat generated during the SMT process of bonding the semiconductor light emitting device 100 to an external substrate (e.g., a PCB substrate, a submount, and the like), there is a problem in bonding between the semiconductor light emitting device chip 150 and the lead frames 110 and 120 .

The present disclosure provides a semiconductor light emitting device in which an electrode of a semiconductor light emitting device chip used in a semiconductor light emitting device is directly bonded to an external substrate. In particular, it is an object of the present invention to provide a semiconductor light emitting device which does not require a junction between a lead frame and a flip chip so that there is no loss in the amount of light emitted from the flip chip due to bonding between the lead frame and the flip chip.

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a body including a bottom portion, the body including at least one hole formed in a bottom portion thereof; A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes and an electrode electrically connected to the plurality of semiconductor layers, Device chip; And a sealing material covering the semiconductor light emitting device chip, wherein the inner surface of the bottom portion forming the hole has a plurality of inclined angles.

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
5 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
6 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
7 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
10 is a view showing an example of a plurality of inclination angles in various forms of the inner surface of the bottom portion,
12 is a view showing a method of manufacturing a semiconductor light emitting device according to the present disclosure,
13 is a view showing another manufacturing method of the semiconductor light emitting device according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

4 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

Fig. 4 (a) is a perspective view, and Fig. 4 (b) is a sectional view along AA '.

The semiconductor light emitting device 200 includes a body 210, a semiconductor light emitting device chip 220, and an encapsulant 230.

The body 210 includes a sidewall 211 and a bottom 212. The bottom portion 212 includes a hole 213. And a cavity 214 formed by the side wall 211 and the bottom portion 212. The bottom portion 212 includes a top surface 215 and a bottom surface 216. The side wall 211 includes an outer surface 217 and an inner surface 218. The height H of the side wall 211 may be less than the length L of the bottom portion 212. [ For example, the height H of the side wall 211 may be 0.1 mm or more and 0.6 mm or less, and the length L of the bottom portion 212 may be 0.5 mm or more. The side wall 211 may also be omitted if necessary (not shown). The size of the hole 213 may be approximately the same as the size of the semiconductor light emitting device chip 220 or 1.5 times the size of the semiconductor light emitting device chip 220. Further, the bottom inner surface 240 forming the hole 213 is preferably inclined for improving the light extraction efficiency.

The semiconductor light emitting device chip 220 is located in the hole 213. The semiconductor light emitting device chip 220 may be a lateral chip, a vertical chip, and a flip chip. However, the flip chip is preferable in that the electrode 221 of the semiconductor light emitting device chip is exposed in the direction of the bottom surface 212 of the body 210 in the present disclosure. The height 219 of the bottom 212 is preferably lower than the height 222 of the semiconductor light emitting device chip 220. If the height 219 of the bottom part 212 is higher than the height 222 of the semiconductor light emitting device chip 220, the light extraction efficiency of the semiconductor light emitting device 200 may deteriorate. However, the height 219 of the bottom part 212 may be higher than the height of the semiconductor light emitting device chip 220 in consideration of the optical path and the like. The height 219 of the bottom portion 212 and the height 222 of the semiconductor light emitting device chip 220 can be measured based on the bottom surface 216 of the bottom portion 212. The height 222 of the semiconductor light emitting device chip 220 may be 0.05 mm or more to 0.5 mm or less. The height 219 of the bottom portion 212 may be greater than or equal to 0.08 mm and less than or equal to 0.4 mm.

The encapsulant 230 is provided at least in the cavity 214 to cover the semiconductor light emitting device chip 220 so that the semiconductor light emitting device chip 220 located in the hole 213 can be fixed to the body 210. The sealing material 230 has a light-transmitting property, and may be made of one of, for example, an epoxy resin and a silicone resin. And may include a wavelength conversion material 231 if necessary. The wavelength converting material 231 may be any material as long as it converts light generated from the active layer of the semiconductor light emitting device chip 220 into light having a different wavelength (for example, pigment, dye, etc.) For example, YAG, (Sr, Ba, Ca) 2 SiO 4 : Eu, etc.) is preferably used. Further, the wavelength converting material 231 can be determined according to the color of light emitted from the semiconductor light emitting element, and is well known to those skilled in the art.

5 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 includes a bonding portion 330. Except for the junction 330, has the same characteristics as the semiconductor light emitting device 200 described in FIG. The joining portion 330 is located on the lower surface 312 of the bottom portion 311 of the body 310. But is spaced apart from the electrode 321 of the semiconductor light emitting device chip 320 exposed in the direction of the lower surface 312 of the bottom portion 311 of the body 310. When the semiconductor light emitting device 300 is bonded to the external substrate due to the bonding portion 330, the bonding strength can be improved as compared with the case where the semiconductor light emitting device 300 is bonded only by the electrode 321. The junction 330 may be a metal. For example, the junction 330 may be one of silver (Ag), copper (Cu), and gold (Au). The abutment 330 may also be a combination of two or more metals. For example, a combination of nickel (Ni) and copper, a combination of chromium (Cr) and copper, a combination of titanium (Ti) and copper. Various combinations of junctions 330 are possible to the extent that those skilled in the art can easily modify them. 5 (b) is a bottom view of FIG. 5 (a), and the arrangement of the electrode 321 and the bonding portion 330 can be confirmed. Although not shown, if necessary, the bonding portion 330 may be disposed in contact with the electrode 321 of the semiconductor light emitting device chip 320 to perform an electrode function.

6 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 includes a reflective material 430 between the bottom portion 411 of the body 410 and the semiconductor light emitting device chip 420. Except for the reflective material 430, has the same characteristics as the semiconductor light emitting device 300 described in FIG. The reflective material 430 is positioned on the side surface of the semiconductor light emitting device chip 420 to reflect the light emitted from the side surface of the semiconductor light emitting device chip 420 to improve the light extraction efficiency of the semiconductor light emitting device 400. Reflective material 430 is preferably a white reflective material. For example, a white silicone resin. The reflective material 430 may be positioned between the reflective material 430 and the semiconductor light emitting device chip 420 as shown in FIG. 6 (b).

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 500 includes a reflective layer 530 on at least one of the inner surface 513 of the side wall 511 of the body 510 and the upper surface 514 of the bottom portion 512. Except for the reflective layer 530, has the same characteristics as the semiconductor light emitting device 300 described in FIG. The reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512 of the body 510. The reflective layer 530 may be, for example, aluminum (Al), silver (Ag), distributed Bragg reflector (DBR), high reflective white reflective material, or the like. In particular, since the semiconductor light emitting device chip 150 must be bonded to the lead frames 110 and 120 in the conventional semiconductor light emitting device 100 as shown in FIG. 3, Can not be formed on the entire upper surface of the lead frames 110 and 120 to be bonded due to an electric short problem. However, in the present disclosure, since there is no lead frame bonded to the semiconductor light emitting device chip 520 and the semiconductor light emitting device chip 520 is not disposed on the upper surface 514 of the bottom portion 512, A reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512. The light extraction efficiency of the semiconductor light emitting device 500 can be improved by forming the reflective layer 530 of high reflection efficiency on the entire upper surface 514 of the bottom portion 512. Although not shown, the reflective layer 530 may be located on the side of the hole.

8 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 600 includes a plurality of holes 612 in a bottom portion 611 of the body 610 and the semiconductor light emitting device chip 620 is positioned in each hole 612. The semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 described in FIG. 5 except that the semiconductor light emitting device chip 620 is located in the plurality of holes 612 and the holes 612. Although two holes are shown in Fig. 8, two or more holes are possible. Further, the semiconductor light emitting device chips 620 located in the respective holes 612 can emit different colors.

9 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

In the semiconductor light emitting device 700, the inner surface 713 of the bottom portion 711 forming the hole 712 has a plurality of inclination angles 740 and 741. For convenience of explanation, the dotted line 730 is enlarged and the description will be centered on FIG. 9 (b). The plurality of inclination angles 740 and 741 have a first inclination angle 740 and a second inclination angle 741. [ The first inclination angle 740 is an inclination angle between the inner side surface 713 of the bottom portion 711 and the bottom surface 714 and the second inclination angle 741 is the inclination angle of the inner side surface 713 of the bottom portion 711 Is an inclination angle formed with the virtual surface 715 parallel to the bottom surface 711 and the bottom surface 714. The inner side surface 713 of the bottom portion 711 is preferably inclined to improve extraction efficiency of the light emitted from the semiconductor light emitting device chip 720. It is more preferable that the inclination angle formed between the bottom portion 711 and the bottom surface 714 is small. However, when the body 710 having the hole 713 is formed in the bottom portion 711 using the mold, the inclination angle formed between the bottom surface 711 and the bottom surface 714 of the bottom portion 711 is made small There are limitations to this. Generally, it is difficult to manufacture at 60 ° or less. Therefore, in the present disclosure, the inner side surface 713 of the bottom portion 711 has a second inclination angle smaller than the first inclination angle 740 formed between the bottom portion 711 and the bottom surface 714 Respectively. The first inclination angle 740 is preferably 60 degrees or more and 90 degrees or less. The second inclination angle 741 is preferably 60 degrees or less. Also, the height 751 of the point 750 changed from the first inclination angle 740 to the second inclination angle 741 is preferably low. For example, the height 751 is preferably 50um or less. The height 751 may be based on the bottom surface 711 and the bottom surface 714.

10 is a view showing an example of a plurality of inclination angles in various forms of the inner surface of the bottom portion. Only the enlarged portion of the inside of the bottom portion is shown for convenience of explanation.

The inner side surface 713 of the bottom portion 711 has a flat surface 760 between the first inclination angle 740 and the second inclination angle 741 as shown in FIG. 10 (b), the first inclination angle 740 of the inner side surface 713 of the bottom portion 711 becomes 90 占 and the inner side surface 713 of the bottom portion 711 reaches the bottom portion 711 and the bottom surface 714 of the bottom portion 711, Can be prevented from breaking well. As shown in FIG. 10 (c), the inner surface 713 of the bottom part 711 may have two or more inclination angles 740, 741, and 742.

11 is a view for explaining the reason that the smaller the inclination angle of the inner surface of the bottom part is, the better. Only the enlarged portion of the inside of the bottom portion is shown for convenience of explanation.

In the semiconductor light emitting device according to the present disclosure, the bottom of the body must have a constant thickness (H). 11 (a), the light 821 emitted from the side surface of the semiconductor light emitting device chip 820 is incident on the inner side surface 811 of the bottom portion 810 when the inclination angle 830 is large, The light 821 may not be extracted uniformly. However, when the inclination angle 831 is small as shown in FIG. 11 (b), the semiconductor light emitting device chip 820 may not be extracted evenly. The light 822 and 823 emitted from the side of the bottom portion 810 are reflected on the inner side surface 811 but are not reflected on the inner side surface 811 of the bottom portion 810 or out of the dotted lines 840 and 841, Light 823 may also be generated and the light 822 and 823 may be uniformly extracted in all directions.

12 is a view showing a method of manufacturing a semiconductor light emitting device according to the present disclosure.

First, a body 900 including a hole 912 is prepared in a bottom portion 910 (S1). The body 900 can be obtained through injection molding. A body 900 having a plurality of inclination angles 914 and 915 is prepared on the inner side surface 913 of the bottom portion 910 forming the hole 912. The semiconductor light emitting device chip 920 is placed (S2). The semiconductor light emitting device chip 920 is covered with an encapsulant 930 to fix the semiconductor light emitting device chip 920 to the body 900 (S3). A temporary fixing plate 940 may be used to prevent the semiconductor light emitting device chip 920 from moving before the semiconductor light emitting device chip 920 is fixed with the sealing material 930. [ The temporary fixing plate 940 can be made of a general adhesive tape. For example, a blue tape. If there is a temporary fixing plate 940, the temporary fixing plate 940 is removed and a bonding portion 950 is formed (S4). A reinforcing member (not shown) may be formed instead of the bonding portion 950. If the stiffener is located between the top and bottom of the bottom of the body, the stiffener may be inserted when making the body. The order of the method of manufacturing a semiconductor light emitting device according to the present disclosure can be included in the scope of the present disclosure to the extent that those skilled in the art can easily change it.

13 is a view showing another manufacturing method of the semiconductor light emitting device according to the present disclosure.

12, a plurality of semiconductor light emitting devices 1000 can be manufactured at one time, as shown in FIG. For example, a substrate 1200 having a plurality of bodies 1100 may be obtained through injection molding, and a plurality of semiconductor light emitting devices 1000 may be manufactured at a time according to the manufacturing method described in FIG. Then, the semiconductor light emitting device 1000 can be cut according to the cutting line 1300.

 Various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a body including a bottom portion, the body having at least one hole formed in a bottom portion thereof; A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes and an electrode electrically connected to the plurality of semiconductor layers, Device chip; And a sealing material covering the semiconductor light emitting device chip, wherein an inner side surface of the bottom portion forming the hole has a plurality of inclination angles.

(2) The plurality of inclination angles are the first inclination angle and the second inclination angle, the first inclination angle is an inclination angle formed between the inner surface of the bottom portion and the bottom surface of the bottom portion, and the second inclination angle is a virtual angle Plane of the semiconductor light emitting device.

(3) The semiconductor light emitting device according to (1), wherein the first inclination angle is larger than the second inclination angle.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the first inclination angle is 60 degrees or more and 90 degrees or less.

(5) The semiconductor light emitting device according to claim 1, wherein the second inclination angle is 60 DEG or less.

(6) The semiconductor light emitting device according to any one of (1) to (5), wherein the height of the point at which the first inclination angle is changed to the second inclination angle is 50um or less.

(7) The semiconductor light emitting device according to (7), wherein the electrode of the semiconductor light emitting device chip is exposed in the bottom direction of the bottom portion.

(8) The semiconductor light emitting device according to any one of the preceding claims, wherein the inner surface of the bottom portion forming the hole includes a flat surface between the first inclination angle and the second inclination angle.

(9) A semiconductor light emitting device comprising a body, including a side wall, and a cavity formed by side walls and a bottom.

According to the present disclosure, a semiconductor light emitting element in which an electrode of a semiconductor light emitting element chip is directly bonded to an external substrate can be obtained.

Also, according to the present disclosure, it is possible to obtain a semiconductor light emitting device which does not require bonding between the lead frame and the flip chip so that there is no loss in the amount of light emitted from the flip chip due to the bonding between the lead frame and the flip chip.

Also, according to the present disclosure, a semiconductor light emitting device having improved light extraction efficiency from the semiconductor light emitting device chip can be obtained.

Semiconductor light emitting devices: 100, 200, 300, 400, 500, 600, 700, 1000
Semiconductor light emitting device chips: 150, 220, 320, 420, 520, 620, 720, 820, 920
Inclination angle: 740, 741, 742, 830, 831, 914, 915

Claims (10)

In the semiconductor light emitting device,
A body including a bottom portion and a side wall, the body having at least one hole formed in a bottom portion thereof;
A plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes and an electrode electrically connected to the plurality of semiconductor layers, Device chip; And
And a sealing material covering the semiconductor light emitting device chip,
The inner surface of the bottom portion forming the hole has a plurality of inclination angles,
Wherein the plurality of inclination angles comprise a first inclination angle formed by the inner side surface of the bottom portion and the bottom surface of the bottom portion and a second inclination angle formed by the inner side surface of the bottom portion and the imaginary surface parallel to the bottom surface of the bottom portion,
Wherein a height of a point which is changed from a first inclination angle to a second inclination angle is lower than an upper surface of the semiconductor light emitting device chip. delete The method according to claim 1,
Wherein the first inclination angle is larger than the second inclination angle. The method of claim 3,
Wherein the first inclination angle is not less than 60 DEG and not more than 90 DEG. The method of claim 3,
And the second inclination angle is 60 DEG or less. The method according to claim 1,
Wherein the height of the point at which the first inclination angle is changed to the second inclination angle is 50um or less. The method according to claim 1,
Wherein the bottom inner surface forming the hole includes a flat surface between the first inclination angle and the second inclination angle. The method according to claim 1,
And the electrodes of the semiconductor light emitting device chip are exposed in the bottom direction of the bottom portion. The method according to claim 1,
A cavity defined by the side wall and the bottom,
Wherein the sealing material covers the semiconductor light emitting device chip provided in the cavity.
delete
KR1020160027072A 2016-03-07 2016-03-07 Semiconductor light emitting device KR101855189B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020160027072A KR101855189B1 (en) 2016-03-07 2016-03-07 Semiconductor light emitting device
US16/083,024 US11038086B2 (en) 2016-03-07 2017-03-07 Semiconductor light-emitting element and manufacturing method therefor
CN201780016053.4A CN109196667B (en) 2016-03-07 2017-03-07 Semiconductor light emitting element and method for manufacturing the same
PCT/KR2017/002455 WO2017155282A1 (en) 2016-03-07 2017-03-07 Semiconductor light-emitting element and manufacturing method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160027072A KR101855189B1 (en) 2016-03-07 2016-03-07 Semiconductor light emitting device

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KR20170104695A KR20170104695A (en) 2017-09-18
KR101855189B1 true KR101855189B1 (en) 2018-05-09

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065793A1 (en) * 2007-09-11 2009-03-12 Lee Kee Hon Light emitting device
JP2009071186A (en) * 2007-09-14 2009-04-02 Stanley Electric Co Ltd Led unit
KR101469237B1 (en) * 2013-08-21 2014-12-09 주식회사 레다즈 Light emitting diode package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065793A1 (en) * 2007-09-11 2009-03-12 Lee Kee Hon Light emitting device
JP2009071186A (en) * 2007-09-14 2009-04-02 Stanley Electric Co Ltd Led unit
KR101469237B1 (en) * 2013-08-21 2014-12-09 주식회사 레다즈 Light emitting diode package

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