KR101806790B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101806790B1
KR101806790B1 KR1020150165515A KR20150165515A KR101806790B1 KR 101806790 B1 KR101806790 B1 KR 101806790B1 KR 1020150165515 A KR1020150165515 A KR 1020150165515A KR 20150165515 A KR20150165515 A KR 20150165515A KR 101806790 B1 KR101806790 B1 KR 101806790B1
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KR
South Korea
Prior art keywords
semiconductor light
light emitting
emitting device
device chip
electrodes
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KR1020150165515A
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Korean (ko)
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KR20170061225A (en
Inventor
박은현
전수근
Original Assignee
주식회사 세미콘라이트
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Priority to KR1020150165515A priority Critical patent/KR101806790B1/en
Publication of KR20170061225A publication Critical patent/KR20170061225A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a first semiconductor light emitting device chip including a plurality of electrodes and an active layer; a first semiconductor light emitting device chip including a reflective film below the active layer; And a second semiconductor light emitting device chip including a plurality of electrodes and an active layer located on the first semiconductor light emitting device chip, and a second semiconductor light emitting device chip including a reflective film on the active layer, Lt; / RTI >

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device in which a plurality of semiconductor light emitting device chips are efficiently arranged.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of holes, and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30 is etched to serve as a bonding pad Electrode 80 (e.g., a Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device chip of the type shown in FIG. 1 is referred to as a lateral chip in particular. Here, when the substrate 10 side is electrically connected to the outside, it functions as a mounting surface.

2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it functions as a mounting surface. As shown in FIG. 2, a semiconductor light emitting device having a structure that functions as a mounting surface when an electrode is electrically connected to the outside and reflects light generated in the active layer toward a growth substrate is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Here, the height reference may be a height from the growth substrate 10.

3 is a view showing another example of the semiconductor light emitting device chip disclosed in U.S. Patent No. 8,008,683. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a first semiconductor layer 30 having a first conductivity, an active layer 40 generating light through recombination of electrons and holes, a second semiconductor layer 50 having a second conductivity different from the first conductivity An electrode 120 formed on the side where the growth substrate is removed and a supporting substrate 100 for supporting the semiconductor layers 30, 40 and 50 while supplying current to the second semiconductor layer 50 ), And an electrode 110 formed on the supporting substrate 100. The electrode 120 is electrically connected to the outside using wire bonding. And functions as a mounting surface when the electrode 110 side is electrically connected to the outside. As shown in FIG. 3, a semiconductor light emitting device chip having a structure in which electrodes 110 and 120 are provided on the upper and lower sides of the active layer 40 is referred to as a vertical chip.

4 is a view showing an example of a semiconductor light emitting structure disclosed in Korean Patent Laid-Open No. 10-2010-0030805. The drawing symbols have been modified for convenience of explanation.

The semiconductor light emitting structure 200 includes a substrate 210, a separator 220 including the cavities 221 and 222, a plurality of semiconductor light emitting device chips 230 and 231, and a transparent encapsulant 220 filling the cavities 221 and 222 (240) and a lens (250). The substrate 210 is a substrate 210 on which the semiconductor light emitting device chips 230 and 231 are mounted. The plurality of semiconductor light-emitting device chips 230 and 231 may be a semiconductor light-emitting device chip that emits blue, red, or green. The translucent encapsulant 240 includes wavelength conversion materials 241 and 242 having different characteristics. For example, the plurality of semiconductor light emitting device chips 230 and 231 emit blue light, the wavelength converting material 241 is a yellow fluorescent material, and the wavelength converting material 242 is a combination of red fluorescent material and can emit white light . However, the semiconductor light emitting structure 200 of FIG. 4 has a complex structure, a large size, and a large number of parts to be used, resulting in a high manufacturing cost.

The present invention relates to a semiconductor light emitting device for use in a semiconductor light emitting structure, in which a plurality of semiconductor light emitting device chips can be efficiently arranged to dramatically reduce the size of the semiconductor light emitting structure, A semiconductor light emitting element which can be turned off.

This will be described later in the Specification for Enforcement of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device comprising: a first semiconductor light emitting device chip including a plurality of electrodes and an active layer; A semiconductor light emitting device chip; And a second semiconductor light emitting device chip including a plurality of electrodes and an active layer located on the first semiconductor light emitting device chip, and a second semiconductor light emitting device chip including a reflective film on the active layer, Is provided.

This will be described later in the Specification for Enforcement of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 7,262,436,
3 is a view showing another example of the semiconductor light-emitting device chip disclosed in U.S. Patent No. 8,008,683,
4 is a view showing an example of a semiconductor light emitting structure disclosed in Korean Patent Laid-Open No. 10-2010-0030805,
5 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
6 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
7 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
9 is a view showing an example of a semiconductor light emitting structure according to the present disclosure,
10 is a view showing another example of the semiconductor light emitting structure according to the present disclosure,
11 is a view showing another example of the semiconductor light emitting structure according to the present disclosure,
12 is a diagram showing an example of a method of manufacturing a semiconductor light emitting structure according to the present disclosure,
13 is a view showing another example of a method of manufacturing a semiconductor light emitting structure according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

5 is a view showing an example of a semiconductor light emitting device according to the present disclosure. 5 (a) is a plan view, and FIG. 5 (b) is a sectional view taken along AA '.

The semiconductor light emitting device 300 includes a first semiconductor light emitting device chip 310 and a second semiconductor light emitting device chip 320 disposed on the first semiconductor light emitting device chip 310. The first semiconductor light emitting device chip 310 includes an active layer 311, a reflective layer 312 positioned below the active layer 311, and a plurality of electrodes 313. Light emitted from the active layer 311 may be reflected by the reflective layer 312 and may be emitted toward the second semiconductor light emitting device chip 320. For example, the light emitted from the active layer 311 may be reflected by the reflective film 312 as shown by a dotted line 340, and may pass through the second semiconductor light emitting device chip 320 and go up. In particular, when the first semiconductor light emitting device chip 310 and the second semiconductor light emitting device chip 320 emit light of different colors, light emitted from the first semiconductor light emitting device chip 310 is emitted to the second semiconductor light emitting device chip 310, The color mixing can be performed well while passing through the through hole 320. The second semiconductor light emitting device chip 320 includes an active layer 321 and a plurality of electrodes 322 located on the active layer 321. That is, the first semiconductor light emitting device chip 310 and the electrodes 313 and 322 of the second semiconductor light emitting device chip 320 are positioned in opposite directions to each other. A light transmitting adhesive layer 330 joining the two chips 310 and 320 is provided between the first semiconductor light emitting device chip 310 and the second semiconductor light emitting device chip 320. The material forming the light-transmitting adhesive layer 330 may be, for example, an epoxy resin, a silicone resin, or the like. The first semiconductor light emitting device chip 310 may be a flip chip, and the second semiconductor light emitting device chip 320 may be a lateral chip.

6 is a view showing another example of the semiconductor light emitting device according to the present disclosure. 6 (a) is a plan view, and FIG. 6 (b) is a sectional view taken along AA '.

The semiconductor light emitting device 400 includes a first semiconductor light emitting device chip 410 and a second semiconductor light emitting device chip 420 disposed on the first semiconductor light emitting device chip 410. The first semiconductor light emitting device chip 410 includes an active layer 411, a reflective film 412 positioned under the active layer 411, and a plurality of electrodes 413. The second semiconductor light emitting device chip 420 includes an active layer 421, a reflective film 422 disposed on the active layer 421, and a plurality of electrodes 423. The light emitted from the active layers 411 and 421 may be reflected by the reflective films 412 and 422 and may be emitted to the side surfaces of the first semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420. Light emitted from the active layer 411 is reflected by the reflection film 412 and the reflection film 422 as shown by the dotted line 440 and is reflected by the side surfaces of the first semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420 And light emitted from the active layer 421 is reflected by the reflective film 412 and the reflective film 422 as indicated by a dotted line 441 to be incident on the first semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420, As shown in FIG. In particular, when the first semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420 emit light of different colors, light emitted from the first semiconductor light emitting device chip 410, The light emitted from the light source 420 may be reflected between the reflection films 412 and 422 so that the colors can be mixed well. The first semiconductor light emitting device chip 410 and the electrodes 413 and 423 of the second semiconductor light emitting device chip 420 are located in opposite directions to each other. And a light transmitting adhesive layer 430 for bonding the two chips 410 and 420 between the second semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420. The material forming the light-transmitting adhesive layer 430 may be, for example, an epoxy resin, a silicone resin, or the like. The first semiconductor light emitting device chip 410 and the second semiconductor light emitting device chip 420 may be flip chips.

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure. Fig. 7 (a) is a plan view, and Fig. 7 (b) is a sectional view taken along AA '.

The semiconductor light emitting device 500 is mounted on the first semiconductor light emitting device chip 510, the second semiconductor light emitting device chip 520 positioned on the first semiconductor light emitting device chip 510, And a third semiconductor light-emitting device chip 530 disposed on the third semiconductor light- The third semiconductor light emitting device chip 530 includes an active layer 531, an electrode 532 located on the active layer 531, and an electrode 533 located below the active layer 531. The electrode 533 located below the active layer 531 of the electrodes 532 and 533 of the third semiconductor light emitting device chip 530 is electrically connected to one of the plurality of electrodes 521 of the second semiconductor light emitting device chip 520 Lt; / RTI > The electrode 533 positioned below the active layer 531 of the third semiconductor light emitting device chip 530 is electrically connected to one electrode 521 of the plurality of electrodes 521 of the second semiconductor light emitting device chip 520, 7A, the second semiconductor light emitting device chip 520 includes a third semiconductor light emitting device chip forming portion 540, and the third semiconductor light emitting device chip 520 is electrically connected The electrode 533 positioned under the active layer 531 of the second semiconductor light emitting device chip 530 may be located on the third semiconductor light emitting device chip forming portion 540 and electrically connected thereto. It is preferable that the third semiconductor light emitting device chip 530 is located on the third semiconductor light emitting device chip forming portion 540 when the area of the plurality of electrodes 521 of the second semiconductor light emitting device chip 520 is not large enough Do. The third semiconductor light emitting device chip 530 may be formed on one electrode 521 of the plurality of electrodes 521 of the third semiconductor light emitting device chip forming part 540 or the second semiconductor light emitting device chip 520, And can be electrically connected and fixed by soldering. The third semiconductor light emitting device chip 530 forming portion 540 is electrically connected to one of the plurality of electrodes 521 of the second semiconductor light emitting device chip 520 by the electrical connecting portion 550. The semiconductor light emitting device 500 shown in FIG. 7 is obtained by adding a third semiconductor light emitting device chip 530 to the semiconductor light emitting device 300 shown in FIG. 5, and the semiconductor light emitting device 500 shown in FIG. Is the same as the device 500. The first semiconductor light emitting device chip 510, the second semiconductor light emitting device chip 520, and the third semiconductor light emitting device chip 530 may emit different colors. For example, the first semiconductor light emitting device chip 510 emits blue light, the second semiconductor light emitting device chip 520 emits green light, and the third semiconductor light emitting device chip 530 emits red light. The light emitted from the first semiconductor light emitting device chip 510 passes through the second semiconductor light emitting device chip 520 by the reflective film 512 positioned below the active layer 511 of the first semiconductor light emitting device chip 510 Because we go up, colors can be mixed well. The third semiconductor light emitting device chip 530 may be a vertical chip. 7A, since the first semiconductor light emitting device chip 510, the second semiconductor light emitting device chip 520, and the third semiconductor light emitting device chip 530 are stacked, the size of the area in the plan view The first semiconductor light emitting device chip 510, the second semiconductor light emitting device chip 520, and the third semiconductor light emitting device chip 530 are structurally stable and the light emitted from the underlying semiconductor light emitting device chip is less desirable. It may be the same area.

8 is a view showing another example of the semiconductor light emitting device according to the present disclosure. Fig. 8 (a) is a plan view, and Fig. 8 (b) is a sectional view taken along line AA '.

 The semiconductor light emitting device 600 is mounted on the first semiconductor light emitting device chip 610, the second semiconductor light emitting device chip 620 located on the first semiconductor light emitting device chip 610, and the second semiconductor light emitting device chip 620 And the third semiconductor light-emitting device chip 630 is positioned. The third semiconductor light emitting device chip 630 includes an active layer 631, an electrode 632 located on the active layer 631, and an electrode 633 located below the active layer 631. The electrode 633 positioned under the active layer 631 among the electrodes 632 and 633 of the third semiconductor light emitting device chip 630 is electrically connected to one of the plurality of electrodes 623 of the second semiconductor light emitting device chip 620 . The electrode 633 of the third semiconductor light emitting device chip 630 is connected to one electrode 623 of the plurality of electrodes 623 of the second semiconductor light emitting device chip 620, Or a third semiconductor light emitting device chip forming part (not shown) in which the third semiconductor light emitting device chip 630 is located in the second semiconductor light emitting device chip 620. The electrodes 533 and 633 of the third semiconductor light emitting device chips 530 and 630 may be positioned on the third semiconductor light emitting device chip forming portion 540 or the second semiconductor light emitting device chip 520, 623 of the second semiconductor light emitting device chips 530, 620 may be positioned on one of the electrodes 521, 623 of the plurality of electrodes of the second semiconductor light emitting device chips 530, 620. When the electrode area of the second semiconductor light emitting device chip is large, the electrode 633 of the third semiconductor light emitting device chip 630 directly contacts the electrode 623 of the second semiconductor light emitting device chip 630 as shown in FIG. 8 (a) When the electrode area of the second semiconductor light emitting device chip is small, the electrode 533 of the third semiconductor light emitting device chip 530 is formed on the third semiconductor light emitting device forming portion 540 as shown in FIG. 7 (a) ). The semiconductor light emitting device 600 shown in FIG. 8 is obtained by adding a third semiconductor light emitting device chip 630 to the semiconductor light emitting device 400 shown in FIG. 6, and the semiconductor light emitting device 600 shown in FIG. Device 600. < / RTI > The first semiconductor light emitting device chip 610, the second semiconductor light emitting device chip 620, and the third semiconductor light emitting device chip 630 may emit different colors. For example, the first semiconductor light emitting device chip 610 emits blue light, the second semiconductor light emitting device chip 620 emits green light, and the third semiconductor light emitting device chip 630 emits red light. In particular, the light emitted from the first semiconductor light emitting device chip 610 and the light emitted from the second semiconductor light emitting device chip 620 are reflected between the reflective films 612 and 622, so that the colors can be well mixed. The third semiconductor light emitting device chip 630 may be a vertical chip. Since the first semiconductor light emitting device chip 610, the second semiconductor light emitting device chip 620, and the third semiconductor light emitting device chip 630 are stacked as shown in FIG. 8 (a), the size of the area in the plan view is The first semiconductor light emitting device chip 610, the second semiconductor light emitting device chip 620, and the third semiconductor light emitting device chip 630 are structurally stable and the light emitted from the underlying semiconductor light emitting device chip is less Do. It may be the same area. Since the structure of the semiconductor light emitting device chip is easily known to a person skilled in the art by referring to Figs. 1 to 3, in the semiconductor light emitting device chips shown in Figs. 5 to 8, the active layer and the first conductivity Other structures such as one semiconductor layer are not shown. In FIGS. 5 to 8, the positions of the active layer and the reflective layer are for illustrating the relative positions between the reflective layer and the active layer, and do not show the exact positions in the active layer and the reflective layer. 5 to 8, the reflection film may be, for example, aluminum (Al), silver (Ag), distributed Bragg reflector (DBR), high reflection white reflection material, or the like. A structure in which a semiconductor light emitting device chip includes a reflective film is known to those of ordinary skill in the art. For example, Korean Patent Laid-Open No. 10-2014-0016516 discloses a structure using a DBR as a reflective film.

9 is a view showing an example of a semiconductor light emitting structure according to the present disclosure.

Fig. 9 (a) is a plan view, and Fig. 9 (b) is a sectional view taken along AA '.

The semiconductor light emitting structure 700 includes a semiconductor light emitting element 710, a plurality of conductive portions 720 and 721, a sealing material 730, and a wall 740. However, the wall 740 may be absent, or the height of the wall 740 may be lower than that of the semiconductor light emitting element 710. The semiconductor light emitting element 710 is the semiconductor light emitting element shown in Figs. 5 to 6. However, the first semiconductor light emitting device chip 711 may not include a reflective film. The plurality of electrodes 713 and 714 of the first semiconductor light emitting device chip 711 are electrically connected to the first electrode 713 electrically connected to the first semiconductor layer having the first conductivity and the second electrode 713 electrically connected to the second semiconductor layer having the second conductivity And is electrically connected to the second electrode 714. The plurality of electrodes 715 and 716 of the second semiconductor light emitting device chip 712 are electrically connected to the third electrode 715 electrically connected to the first semiconductor layer having the first conductivity and the second electrode 715 electrically connected to the second semiconductor layer having the second conductivity And a fourth electrode 716 connected to the second electrode 711. [ The plurality of conductive parts 720 and 721 are preferably made of a metal material and may be, for example, one of copper (Cu), silver (Ag), and gold (Au). The first conductive portion 720 is electrically connected to the third electrode 715 of the second semiconductor light emitting device chip 712 and the second conductive portion 721 is electrically connected to the fourth electrode 712 of the second semiconductor light emitting device chip 712. [ (Not shown). For example, the plurality of conductive parts 720 and 721 and the plurality of electrodes 715 and 716 of the second semiconductor light emitting device chip 712 may be electrically connected by wire 750 bonding. The sealing material 730 covers the semiconductor light emitting element 710 and the plurality of conductive portions 720 and 721 to couple the plurality of conductive portions 720 and 721 to the semiconductor light emitting element 710. For example, Of an epoxy resin or a silicone resin. A plurality of electrodes 713 and 714 and a plurality of conductive portions 720 and 721 of the first semiconductor light emitting device chip 711 may be electrically connected to the outside (e.g., PCB, submount, etc.) At least a part of the plurality of electrodes 713 and 714 and the plurality of conductive parts 720 and 721 of the element chip 711 are preferably exposed from the sealing material 730. [

10 is a view showing another example of the semiconductor light emitting structure according to the present disclosure. 10 (a) is a plan view, and FIG. 10 (b) is a sectional view taken along AA '.

The semiconductor light emitting structure 800 includes a semiconductor light emitting element 810, a plurality of conductive portions 820, 821 and 822, a sealing material 830 and a wall 840. However, the wall 840 may be absent, or the height of the wall 840 may be lower than that of the semiconductor light emitting element 810. The semiconductor light emitting element 810 is the semiconductor light emitting element shown in Figs. However, the first semiconductor light emitting device chip 811 may not include a reflective film. The plurality of electrodes 814 and 815 of the first semiconductor light emitting device chip 811 are electrically connected to the first electrode 814 electrically connected to the first semiconductor layer having the first conductivity and the second semiconductor layer having the second conductivity, And a second electrode 815 connected to the second electrode 815. The plurality of electrodes 816 and 817 of the second semiconductor light emitting device chip 812 are electrically connected to the third electrode 816 electrically connected to the first semiconductor layer having the first conductivity and the second semiconductor layer having the second conductivity, And a fourth electrode 817 connected to the second electrode 817. The plurality of electrodes 818 and 819 of the third semiconductor light emitting device chip 813 are electrically connected to the fifth electrode 819 electrically connected to the second semiconductor layer having the second conductivity and the first semiconductor layer having the first conductivity, And a sixth electrode 818 connected to the second electrode 820. [ The plurality of conductive parts 820, 821 and 822 are preferably made of a metal material and may be, for example, copper (Cu), silver (Ag), or gold (Au). The first conductive portion 820 is electrically connected to the third electrode 816 of the second semiconductor light emitting device chip 812 and the second conductive portion 821 is electrically connected to the fourth electrode 812 of the second semiconductor light emitting device chip 812. [ (Not shown). The third conductive portion 822 is electrically connected to the fifth electrode 819 of the third semiconductor light emitting device chip 813. A plurality of electrodes 816, 817 and 819 of the plurality of conductive parts 820, 821 and 822, the second semiconductor light emitting device chip 812 and the third semiconductor light emitting device chip 813 are connected by wire 850 bonding And can be electrically connected. The sealing material 830 covers the semiconductor light emitting element 810 and the plurality of conductive portions 820, 821 and 822 to couple the plurality of conductive portions 820, 821 and 822 to the semiconductor light emitting element 810, An epoxy resin of a light-transmitting material, and a silicone resin. A plurality of electrodes 814 and 815 and a plurality of conductive parts 820 and 821 and 822 of the first semiconductor light emitting device chip 811 may be electrically connected to the outside (for example, PCB, submount, etc.) At least a part of the plurality of electrodes 814 and 815 and the plurality of conductive portions 820 and 821 and 822 of the semiconductor light emitting device chip 811 are preferably exposed from the sealing material 830. [

11 is a view showing another example of the semiconductor light emitting structure according to the present disclosure. Fig. 11 (a) is a plan view, and Fig. 11 (b) is a sectional view taken along line AA '.

The first electrode 912 electrically connected to the first semiconductor layer having the first conductivity of the first semiconductor light emitting device chip 911 is electrically connected to the first conductive portion 920, And is electrically connected to the first conductive portion 920 in common with the third electrode 931 electrically connected to the first semiconductor layer having the first conductivity of the second semiconductor light emitting device chip 930. The second electrode 913 electrically connected to the second semiconductor layer having the second conductivity of the first semiconductor light emitting device chip 911 is electrically connected to the fourth conductive portion 921. Therefore, when the semiconductor light emitting structure 900 is electrically connected to an external (e.g., a PCB, a submount, or the like), a plurality of electrodes 912 And 913 are electrically connected to the outside through the first conductive portion 920 and the fourth conductive portion 921 that are electrically connected to each other. The semiconductor light emitting structure 900 described in FIG. 11 is the same as the semiconductor light emitting structure 800 described in FIG. 10, except for that described in FIG.

12 is a view showing an example of a method of manufacturing the semiconductor light emitting structure according to the present disclosure.

First, a body 1000 including a hole 1100 is prepared (S1). A first semiconductor light emitting device chip 1210 including a first electrode and a second electrode in a hole 1100 of the body 1000 and a third electrode and a fourth electrode located on the first semiconductor light emitting device chip The semiconductor light emitting device 1200 including the second semiconductor light emitting device chip 1220 is positioned (S2). A temporary fixing plate 1600 may be used to temporally fix the semiconductor light emitting device 1200 to the hole 1100. [ The temporary fixing plate 1600 can be made of a general adhesive tape. For example, a blue tape. Alternatively, to fabricate the semiconductor light emitting device structure 800 shown in FIG. 10, a first semiconductor light emitting device chip including a first electrode and a second electrode in a hole of a body, a first semiconductor light emitting device chip And a third semiconductor light emitting device chip including a fifth electrode and a sixth electrode on a second semiconductor light emitting device chip, wherein the third semiconductor light emitting device chip includes a third electrode and a fourth electrode, The semiconductor light emitting element electrically connected to the four electrodes can be positioned. Then, the first conductive part 1300 and the second conductive part 1310 are positioned in the hole 1100 of the body 1000 (S3). Although not shown, two or more conductive parts may be added as needed. For example, the third conductive portion can be positioned to fabricate the semiconductor light emitting device structure 800 described in FIG. For convenience of explanation, the step S3 will be described as a plan view. The third electrode 1221 of the second semiconductor light emitting device chip 1220 is electrically connected to the first conductive portion 1300 and the third electrode 1221 of the second semiconductor light emitting device chip 1220 is electrically connected to the second conductive portion 1310. [ 4 electrode 1222 are electrically connected (S4). The electrical connection may utilize wire (1400) bonding. Thereafter, the plurality of conductive parts 1300 and 1310 and the semiconductor light emitting device 1200 are fixed by covering the plurality of conductive parts 1300 and 1310 and the semiconductor light emitting device 1200 with the sealing material 1500 (S5). Thereafter, the semiconductor light emitting structure is cut along the cut line 1700 to obtain each semiconductor light emitting structure (S6). Depending on the position of the cut line 1700, the semiconductor light emitting structure may not have a wall. The semiconductor light emitting structure without a wall can be manufactured through steps S2 to S6 directly on the temporary fixing plate 1600 without using a body having a hole. For example, as shown in FIG. 13, a plurality of conductive parts 1300 and 1310 and a semiconductor light emitting device 1200 are positioned on the temporary fixing plate 1600 at appropriate intervals (steps S2 and S3) ) And the encapsulation material (step S5) so that the semiconductor light emitting device structure can be manufactured. If a wall is required, the semiconductor light emitting structure may be manufactured through steps S2 through S6 after the wall 1800 is formed on the temporary fixing plate 1600. [ The order of manufacturing the semiconductor light-emitting structure can be included in the scope of the present disclosure to the extent that it can be easily changed by a person skilled in the art.

13 is a view showing another example of a method of manufacturing the semiconductor light emitting structure according to the present disclosure.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a first semiconductor light emitting device chip including a plurality of electrodes and an active layer; a first semiconductor light emitting device chip including a reflective film below the active layer; And a second semiconductor light emitting device chip including a plurality of electrodes and an active layer located on the first semiconductor light emitting device chip, and a second semiconductor light emitting device chip including a reflective film on the active layer, .

(2) The plurality of electrodes of the first semiconductor light emitting device chip are located below the active layer of the first semiconductor light emitting device chip, the plurality of electrodes of the second semiconductor light emitting device chip are located above the active layer of the second semiconductor light emitting device chip, Wherein the plurality of electrodes of the one semiconductor light emitting element chip and the plurality of electrodes of the second semiconductor light emitting element chip are located in directions opposite to each other.

(3) a light-transmissive adhesive layer positioned between the first semiconductor light-emitting device chip and the second semiconductor light-emitting device chip.

(4) A third semiconductor light emitting device chip comprising a plurality of electrodes and an active layer disposed on a second semiconductor light emitting device chip.

(5) One of the plurality of electrodes of the third semiconductor light emitting device chip is located above the active layer of the third semiconductor light emitting device chip, and the other of the plurality of electrodes is located below the active layer of the third semiconductor light emitting device chip Semiconductor light emitting device.

(6) The semiconductor light emitting device of (3), wherein the electrode located below the active layer of the third semiconductor light emitting device chip among the electrodes of the third semiconductor light emitting device chip is electrically connected to one of the electrodes of the second semiconductor light emitting device chip.

(7) The semiconductor light emitting device according to any one of (1) to (7), wherein the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, and the third semiconductor light emitting device chip emit different colors.

(8) The first semiconductor light emitting device chip emits light of one of blue or green, the second semiconductor light emitting device chip emits light of one of blue or green, and the third semiconductor light emitting device chip emits red light Wherein the semiconductor light emitting device is a semiconductor light emitting device.

(9) In the second semiconductor light-emitting device chip, the plurality of electrodes of the second semiconductor light-emitting device chip are positioned on the first semiconductor light-emitting device chip so that the plurality of electrodes of the second semiconductor light- One of the plurality of electrodes of the third semiconductor light emitting device chip is located on the active layer of the third semiconductor light emitting device chip and the other of the plurality of electrodes is located below the active layer of the third semiconductor light emitting device chip, The electrode located below the active layer of the semiconductor light emitting device is located above the second semiconductor light emitting device chip so as to be electrically connected to one of the electrodes of the second semiconductor light emitting device chip, The second semiconductor light emitting device chip emits light of one of blue or green, and the third semiconductor light emitting device chip emits red light to emit different colors The semiconductor light emitting device characterized in that light.

(10) A plurality of electrodes of the first semiconductor light emitting device chip are located below the active layer of the first semiconductor light emitting device chip, a plurality of electrodes of the second semiconductor light emitting device chip are located above the active layer of the second semiconductor light emitting device chip, Wherein one of the plurality of electrodes of the semiconductor light emitting device chip is located below the active layer of the third semiconductor light emitting device chip and the other is located above the active layer of the third semiconductor light emitting device chip.

(11) A semiconductor light emitting device, wherein the first semiconductor light emitting device chip is a flip chip, the second semiconductor light emitting device chip is a lateral chip, and the third semiconductor light emitting device chip is a vertical chip.

According to the semiconductor light emitting device of the present disclosure, the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, and the third semiconductor light emitting device chip of the semiconductor light emitting device can be individually turned on / off.

According to the semiconductor light emitting device of the present disclosure, the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, and the third semiconductor light emitting device chip of the semiconductor light emitting device can be individually turned on / off.

In addition, according to the semiconductor light emitting device of the present disclosure, a plurality of semiconductor light emitting device chips are stacked in a vertical structure so that color mixing can be performed well. In the semiconductor light emitting structure using the semiconductor light emitting device according to the present disclosure, The size of the semiconductor light emitting structure can be drastically reduced.

Semiconductor light emitting device chips 230, 231, 310, 320, 410, 420, 510, 520, 530, 610, 620, 630, 711, 712, 811, 812, 813, 911, 930, 1210, 1220
Semiconductor light emitting devices: 300, 400, 500, 600, 710, 810, 1200
Semiconductor light emitting structure: 200, 700, 800, 900

Claims (11)

In the semiconductor light emitting device,
A first semiconductor light emitting device chip including a plurality of electrodes and an active layer, the first semiconductor light emitting device chip including a reflective film below the active layer; And,
A second semiconductor light emitting device chip disposed on the first semiconductor light emitting device chip and including a plurality of electrodes and an active layer, and a second semiconductor light emitting device chip including a reflective film on the active layer,
The plurality of electrodes of the first semiconductor light emitting device chip are located below the active layer and the reflection film of the first semiconductor light emitting device chip and the plurality of electrodes of the second semiconductor light emitting device chip are located on the active layer and the reflection film of the second semiconductor light emitting device chip Wherein the semiconductor light emitting device is a semiconductor light emitting device. The method according to claim 1,
Wherein a plurality of electrodes of the first semiconductor light-emitting element chip and a plurality of electrodes of the second semiconductor light-emitting element chip are located in regions corresponding to each other and located in mutually opposite directions. The method according to claim 1,
And a light-transmitting adhesive layer disposed between the first semiconductor light-emitting device chip and the second semiconductor light-emitting device chip. The method according to claim 1,
And a third semiconductor light emitting device chip including a plurality of electrodes and an active layer disposed on the second semiconductor light emitting device chip. The method of claim 4,
Wherein one of the plurality of electrodes of the third semiconductor light emitting device chip is located above the active layer of the third semiconductor light emitting device chip and the other of the plurality of electrodes is located below the active layer of the third semiconductor light emitting device chip. . The method of claim 5,
And an electrode located below the active layer of the third semiconductor light emitting device chip among the electrodes of the third semiconductor light emitting device chip is electrically connected to one of the electrodes of the second semiconductor light emitting device chip. The method of claim 4,
Wherein the first semiconductor light emitting device chip, the second semiconductor light emitting device chip, and the third semiconductor light emitting device chip emit different colors. The method of claim 7,
The first semiconductor light emitting device chip emits light of one of blue or green, the second semiconductor light emitting device chip emits light of one of blue or green, and the third semiconductor light emitting device chip emits red light . The method of claim 4,
The second semiconductor light emitting device chip is positioned on the first semiconductor light emitting device chip such that a plurality of electrodes of the second semiconductor light emitting device chip are located in opposite directions to the plurality of electrodes of the first semiconductor light emitting device chip,
In the third semiconductor light emitting device chip, one of the plurality of electrodes of the third semiconductor light emitting device chip is located above the active layer of the third semiconductor light emitting device chip, and the other of the plurality of electrodes is located below the active layer of the third semiconductor light emitting device chip , An electrode located below the active layer of the third semiconductor light emitting device is disposed on the second semiconductor light emitting device chip so as to be electrically connected to one of the electrodes of the second semiconductor light emitting device chip,
The first semiconductor light emitting device chip emits light of one of blue or green, the second semiconductor light emitting device chip emits light of one of blue or green, and the third semiconductor light emitting device chip emits red light, Wherein the light emitting layer emits light of a color. The method of claim 4,
The plurality of electrodes of the first semiconductor light emitting device chip are positioned below the active layer of the first semiconductor light emitting device chip,
The plurality of electrodes of the second semiconductor light-emitting device chip are positioned above the active layer of the second semiconductor light-emitting device chip,
Wherein one of the plurality of electrodes of the third semiconductor light emitting device chip is located below the active layer of the third semiconductor light emitting device chip and the other is located above the active layer of the third semiconductor light emitting device chip. The method of claim 4,
Wherein the first semiconductor light emitting element chip is a flip chip, the second semiconductor light emitting element chip is a lateral chip, and the third semiconductor light emitting element chip is a vertical chip.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062201A (en) * 2008-09-01 2010-03-18 Sony Corp Semiconductor light emitting element and method of manufacturing the same
US20110068330A1 (en) * 2009-09-18 2011-03-24 Kabushiki Kaisha Toshiba Light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062201A (en) * 2008-09-01 2010-03-18 Sony Corp Semiconductor light emitting element and method of manufacturing the same
US20110068330A1 (en) * 2009-09-18 2011-03-24 Kabushiki Kaisha Toshiba Light emitting device

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