WO2017061844A1

WO2017061844A1 - Semiconductor light-emitting device

Info

Publication number: WO2017061844A1
Application number: PCT/KR2016/011326
Authority: WO
Inventors: 박은현; 전수근; 김경민; 정동소; 우경제
Original assignee: 주식회사 세미콘라이트
Priority date: 2015-10-08
Filing date: 2016-10-10
Publication date: 2017-04-13

Abstract

Disclosed is a semiconductor light-emitting device comprising: a body having a bottom part and sidewalls, and comprising a cavity formed by the bottom part and the sidewalls, the bottom part having at least one hole formed therein; a semiconductor light-emitting device chip located at each hole and having a plurality of semiconductor layers for generating light through electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulant provided at least in the cavity so as to cover the semiconductor light-emitting device chip, wherein the electrode of the semiconductor light-emitting device chip is exposed in the direction toward the lower surface of the bottom part of the body.

Description

Semiconductor light emitting device

The present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a semiconductor light emitting device having improved light extraction efficiency.

This section provides background information related to the present disclosure which is not necessarily prior art. In addition, in the present specification, direction indications such as up / down, up / down, etc. are based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip may include a growth substrate 10 (eg, a sapphire substrate), a growth layer 10, a buffer layer 20, a first semiconductor layer 30 having a first conductivity (eg, an n-type GaN layer), and electrons. The active layer 40 (eg, INGaN / (In) GaN MQWs) that generates light through recombination of holes, and the second semiconductor layer 50 (eg, p-type GaN layer) having a second conductivity different from the first conductivity are sequentially And a transmissive conductive film 60 for spreading current and an electrode 70 serving as a bonding pad, and serving as a bonding pad on the etched and exposed first semiconductor layer 30. An electrode 80, for example, a Cr / Ni / Au laminated metal pad, is formed. The semiconductor light emitting device of the form as shown in FIG. 1 is particularly called a lateral chip. Here, when the growth substrate 10 side is electrically connected to the outside becomes a mounting surface.

2 is a view showing another example of the semiconductor light emitting device chip disclosed in US Patent No. 7,262,436. For convenience of description, reference numerals have been changed.

The semiconductor light emitting device chip may include a growth substrate 10 and a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 that generates light through recombination of electrons and holes, and a first conductivity. The second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 is sequentially deposited, and three

electrode layers

90, 91, 92 are formed on the growth substrate 10 to reflect light. have. The first electrode film 90 may be an Ag reflecting film, the second electrode film 91 may be a Ni diffusion barrier film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 serving as a bonding pad is formed on the etched and exposed first semiconductor layer 30. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. A semiconductor light emitting device chip of the same type as that of FIG. 2 is particularly referred to as a flip chip. In the flip chip illustrated in FIG. 2, the electrode 80 formed on the first semiconductor layer 30 is at a lower level than the

electrode films

90, 91, and 92 formed on the second semiconductor layer, but may be formed at the same height. You can also do that. The height reference may be the height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 includes a vertical semiconductor light emitting chip 150 in the

lead frames

110 and 120, the mold 130, and the cavity 140, and the cavity 140. Is filled with an encapsulant 170 containing wavelength converting material 160. The lower surface of the vertical semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110, and the upper surface is electrically connected to the lead frame 120 by the wire 180. A portion of the light emitted from the vertical semiconductor light emitting device chip 150 may excite the wavelength conversion material 160 to produce light of different colors, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 may generate blue light, and light generated by being excited by the wavelength converting material 160 may be yellow light, and blue light and yellow light may be mixed to produce white light. 3 illustrates a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but a semiconductor light emitting device having a shape similar to that of FIG. 3 may be manufactured using the semiconductor light emitting device chips illustrated in FIGS. 1 and 2. have. However, the semiconductor light emitting device 100 illustrated in FIG. 3 requires bonding between the semiconductor light emitting device chip 150 and the

lead frames

110 and 120, and in particular, when the flip chip illustrated in FIG. 2 is used, the lead frame 110 may be used. , 120), the amount of light emitted from the flip chip is likely to be lost by the bonding material (eg, solder paste). In addition, due to heat generated during the SMT process of bonding the semiconductor light emitting device 100 to an external substrate (eg, PCB substrate, submount, etc.), there is a problem in bonding between the semiconductor light emitting device chip 150 and the

lead frames

110 and 120. Could occur.

The present disclosure provides a semiconductor light emitting device in which an electrode of a semiconductor light emitting device chip used in a semiconductor light emitting device is directly bonded to an external substrate. In particular, even if a flip chip is used, a semiconductor light emitting device does not need to be bonded between the lead frame and the flip chip so that the amount of light emitted from the flip chip is not lost by the bonding between the lead frame and the flip chip.

This will be described later in the section titled 'Details of the Invention.'

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a semiconductor light emitting device, comprising: a body having a bottom and sidewalls, the body including a cavity formed by the bottom and sidewalls; A body having at least one hole formed therein; A semiconductor light emitting device chip located in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers for generating light by recombination of electrons and holes, and an electrode electrically connected to the plurality of semiconductor layers; And an encapsulant provided at least in the cavity to cover the semiconductor light emitting device chip, wherein the electrode of the semiconductor light emitting device chip is exposed in a lower surface direction of the bottom of the body.

This will be described later in the section titled 'Details of the Invention.'

1 is a view showing an example of a conventional semiconductor light emitting device chip;

2 is a view showing another example of a semiconductor light emitting device chip disclosed in US Patent No. 7,262,436;

3 is a view showing an example of a conventional semiconductor light emitting device;

4 illustrates an example of a semiconductor light emitting device according to the present disclosure;

5 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

6 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

7 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

8 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

9 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

10 is a view illustrating various embodiments of a reinforcing material in a semiconductor light emitting device according to the present disclosure;

11 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

12 illustrates an example of a semiconductor light emitting device chip used in a semiconductor light emitting device according to the present disclosure;

13 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

14 is a view showing a method of manufacturing a semiconductor light emitting device according to the present disclosure;

15 is a view showing another manufacturing method of a semiconductor light emitting device according to the present disclosure;

16 illustrates another example of a semiconductor light emitting device according to the present disclosure;

17 illustrates another example of a semiconductor light emitting device according to the present disclosure;

18 is a view illustrating various embodiments of an upper surface of a body bottom part in a semiconductor light emitting device according to the present disclosure;

19 is a view for explaining a principle that light extraction is improved when the upper surface of the body bottom part includes at least one of a concave portion and a convex portion in the semiconductor light emitting device according to the present disclosure;

20 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

21 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

4 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.

Fig. 4A is a perspective view and Fig. 4B is a sectional view along AA '.

The semiconductor light emitting device 200 includes a body 210, a semiconductor light emitting device chip 220, and an encapsulant 230.

Body 210 includes sidewalls 211 and bottom portion 212. The bottom portion 212 includes a hole 213. It also includes a cavity 214 formed by sidewalls 211 and bottom 212. The bottom portion 212 includes an upper surface 215 and a lower surface 216. Sidewall 211 includes an outer side 217 and an inner side 218. The height H of the side wall 211 may be smaller than the length L of the bottom portion 212. For example, the height H of the side wall 211 may be 0.1 mm or more and 0.6 mm or less, and the length L of the bottom portion 212 may be 0.5 mm or more. The side wall 211 may also be absent as needed (not shown). The size of the hole 213 is similar to that of the semiconductor light emitting device chip 220 or 1.5 times the size of the semiconductor light emitting device chip 220. In addition, the side surface 240 of the hole 213 is preferably inclined to improve the light extraction efficiency.

The semiconductor light emitting device chip 220 is located in the hole 213. The semiconductor light emitting device chip 220 may be a lateral chip, a vertical chip, and a flip chip. However, in the present disclosure, the flip chip is preferable in that the electrode 221 of the semiconductor light emitting device chip is exposed toward the bottom surface 216 of the bottom portion 212 of the body 210. The height 219 of the bottom portion 212 is preferably lower than the height 222 of the semiconductor light emitting device chip 220. This is because when the height 219 of the bottom 212 is higher than the height 222 of the semiconductor light emitting device chip 220, the light extraction efficiency of the semiconductor light emitting device 200 may decrease. However, although the light extraction efficiency may be reduced, the height 219 of the bottom portion 212 may be higher than the height of the semiconductor light emitting device chip 220 in consideration of an optical path. The height 219 of the bottom part 212 and the height 222 of the semiconductor light emitting device chip 220 may be measured based on the bottom surface 216 of the bottom part 212. The height 222 of the semiconductor light emitting device chip 220 may be 0.05 mm or more and 0.5 mm or less. The height 219 of the bottom 212 may be 0.08 mm or more and 0.4 mm or less.

The encapsulant 230 is provided at least in the cavity 214 to cover the semiconductor light emitting device chip 220, so that the semiconductor light emitting device chip 220 positioned in the hole 213 may be fixed to the body 210. The encapsulant 230 is light-transmissive and may be made of one of an epoxy resin and a silicone resin, for example. If necessary, the wavelength converter 231 may be included. The wavelength converting material 231 may be any type as long as it converts light generated from the active layer of the semiconductor light emitting device chip 220 into light having a different wavelength (eg, a pigment, a dye, etc.). Example: YAG, (Sr, Ba, Ca) ₂ SiO ₄ : Eu, etc.) is preferably used. In addition, the wavelength conversion material 231 may be determined according to the color of light emitted from the semiconductor light emitting device, and is well known to those skilled in the art.

5 illustrates another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 includes a junction 330. Except for the junction portion 330, the semiconductor light emitting device 200 has the same characteristics as the semiconductor light emitting device 200 of FIG. The junction 330 is located on the bottom 312 of the bottom 311 of the body 310. However, it is located away from the electrode 321 of the semiconductor light emitting device chip 320 exposed in the direction of the bottom 312 of the bottom portion 311 of the body 310. When the semiconductor light emitting device 300 is bonded to the external substrate due to the bonding part 330, the bonding force may be improved compared to the case where the electrode 321 is bonded only. The junction 330 may be metal. For example, the junction 330 may be one of silver (Ag), copper (Cu), and gold (Au). In addition, the junction 330 may be a combination of two or more metals. For example, it may be one of a combination of nickel (Ni) and copper, a combination of chromium (Cr) and copper, and a combination of titanium (Ti) and copper. The junction 330 may be variously combined in a range that can be easily changed by those skilled in the art. FIG. 5B is a bottom view of FIG. 5A, and the arrangement of the electrode 321 and the junction part 330 can be confirmed. Although not shown, if necessary, the junction part 330 may be in contact with the electrode 321 of the semiconductor light emitting device chip 320 to perform an electrode function.

6 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 includes a reflective material 430 between the bottom portion 411 of the body 410 and the semiconductor light emitting device chip 420. Except for the reflective material 430, the semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 of FIG. 5. Since the reflective material 430 is positioned on the side surface of the semiconductor light emitting device chip 420, the light emitted from the side surface of the semiconductor light emitting device chip 420 may be reflected, thereby improving light extraction efficiency of the semiconductor light emitting device 400. The reflective material 430 is preferably a white reflective material. For example, it may be a white silicone resin. In addition, as illustrated in FIG. 6B, the reflective material 430 may be positioned to form a space 431 between the reflective material 430 and the semiconductor light emitting device chip 420.

7 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 500 includes a reflective layer 530 on at least one of the inner surface 513 of the sidewall 511 of the body 510 and the upper surface 514 of the bottom 512. Except for the reflective layer 530, the semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 of FIG. 5. The reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512 of the body 510. The reflective layer 530 may be made of aluminum (Al), silver (Ag), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like. In particular, since the semiconductor light emitting device chip 150 should be bonded to the lead frames 110 and 120 in the conventional semiconductor light emitting device 100 as shown in FIG. 3, the reflective layer of the metal having good reflection efficiency is the semiconductor light emitting device chip 150. The entire upper surfaces of the lead frames 110 and 120 to be joined could not be formed due to an electrical short problem. However, in the present disclosure, since there is no lead frame bonded to the semiconductor light emitting device chip 520, and the semiconductor light emitting device chip 520 is not positioned on the top surface 514 of the bottom part 512, the metal having high reflection efficiency may be used. The reflective layer 530 may be formed on the entire upper surface 514 of the bottom portion 512. The light extraction efficiency of the semiconductor light emitting device 500 may be improved by forming the metal reflective layer 530 having high reflection efficiency on the entire upper surface 514 of the bottom portion 512. Although not shown, the reflective layer 530 may be located at the side of the hole.

8 is a view illustrating another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 600 includes a plurality of holes 612 in the bottom portion 611 of the body 610, and the semiconductor light emitting device chip 620 is positioned in each hole 612. The semiconductor light emitting device 300 has the same characteristics as the semiconductor light emitting device 300 of FIG. 5 except that the semiconductor light emitting device chip 620 is positioned in the plurality of holes 612 and each hole 612. Although two holes are described in FIG. 8, two or more holes are possible. In addition, the semiconductor light emitting device chips 620 disposed in the holes 612 may emit different colors.

9 is a view showing another example of a semiconductor light emitting device according to the present disclosure. Fig. 9A is a bottom view and Fig. 9B is a perspective view.

The semiconductor light emitting device 700 includes a reinforcing material 720. Except for the reinforcing material 720 has the same characteristics as the semiconductor light emitting device 200 shown in FIG. The reinforcing material 720 may be a plurality. As illustrated in FIG. 9, when the reinforcement 720 is two, the hole 711 and the semiconductor light emitting device chip 730 disposed in the hole 711 may be located between the reinforcement 720. The reinforcing material 720 and the hole 711 is preferably disposed so as not to overlap. The reinforcing material 720 may compensate for the problem of breaking the body 710 due to the bending or bending of the body 710. The reinforcing material 720 is preferably a metal. The reinforcement 720 may be the lead frame described in FIG. 3. In addition, the reinforcing member 720 positioned as shown in FIG. 9 (a) and the reinforcing member 720 positioned as shown in FIGS. 10 (b) to 10 (c) may also have a function of the joint of FIG. 5.

10 is a view illustrating various embodiments of a reinforcing material in a semiconductor light emitting device according to the present disclosure. 10 (a) to 10 (c) are perspective views, and FIG. 10 (d) is a bottom view.

10 (a) to 10 (c) show that the reinforcement 720 is variously positioned between the upper surface 712 and the lower surface 713 of the bottom of the body 710 as various embodiments of the reinforcement 720. Giving. The reinforcement 720 of FIG. 10 (a) shows that it is fully inserted into the body 710. The reinforcement 720 of FIG. 10B shows that the bottom surface 721 of the reinforcement 720 coincides with the bottom surface 713 of the bottom of the body 710. The reinforcement 720 of FIG. 10C shows that a part of the reinforcement 720 protrudes from the bottom surface 713 of the bottom of the body 710. 10 (d), the reinforcement 720 is formed in both the longitudinal direction and the longitudinal direction of the body 710 unlike FIG. 9 (a) in which the reinforcement 720 is formed in the longitudinal direction of the body 710. Show what is there. That is, it is preferable that the reinforcement 720 is formed as wide as possible so as not to overlap with the hole of the body 710, such as a problem of breaking the body 710 due to the bending or the bending of the body 710.

11 is a view showing another example of a semiconductor light emitting device according to the present disclosure. 11 (a) and 11 (c) are bottom views, FIG. 11 (b) is a cross-sectional view taken along AA ′ of FIG. 11 (a), and FIG. 11 (d) shows BB ′ of FIG. 11 (c). It is a cross-sectional view.

The semiconductor light emitting device 700 including the reinforcing material 720 is a protection device for the reinforcing material 720 to protect the semiconductor light emitting device chip 730 from static electricity or reverse current, as shown in FIGS. 11A and 11B. 740 (eg, a zener diode, a pn diode). In addition, the protection element 740 is inserted into the reinforcing material 720 as shown in FIG. The protection element 740 is covered with, for example, a white silicone resin 750 except for the electrode 741 of the protection element 740. Also, in order to clarify the positional relationship of the protection element 740, the upper surface 712 of the bottom of the body 710 is shown in Fig. 11 (b). However, since the protection element 740 is small in size, it may be difficult to directly mount it on the electrode of the external substrate. To solve this problem, the protection element 740 is provided in the body 710 as shown in FIGS. 11 (c) and 11 (d). ) Can be inserted. An electrode 741 of the protection element 740 is positioned over the shorted reinforcement 720 and electrically connected to the reinforcement 720. The protection element 740 is covered with the white silicone resin 750. The reinforcing material 720 is connected to the electrode of the external substrate together with the semiconductor light emitting device chip 730. In order to prevent a short, the reinforcement described in FIG. 11C is short-circuited 722. 11 (a) and 11 (c), the protection device 740 is electrically connected in parallel with the semiconductor light emitting device chip 730 through an electrode of an external substrate. In FIG. 11A, the protection element 740 is directly connected to the external substrate. In FIG. 11C, the protection element 740 is electrically connected to the external substrate through the reinforcing material 720. 11 (a) and 11 (c), an electrode arrangement of an external substrate for allowing the semiconductor light emitting device chip 730 and the protection device 740 to be electrically reversely connected in parallel is easy for those skilled in the art.

12 is a diagram illustrating an example of a semiconductor light emitting device chip used in a semiconductor light emitting device according to the present disclosure.

FIG. 12A is a perspective view and FIG. 12B is a cross-sectional view taken along AA ′.

The semiconductor light emitting device chip 800 used in the semiconductor light emitting device according to the present disclosure includes a non-transmissive growth substrate 810 and a semiconductor light emitting unit 820.

The non-transparent growth substrate 810 may include a cavity 830 to expose the upper surfaces 821 of the plurality of semiconductor layers 822. Since the non-transparent growth substrate 810 is non-transmissive, the light emitted from the semiconductor light emitting unit 820 exits upward through the cavity 830. The cavity 830 may be obtained through an etching process. The side surface 831 of the cavity 830 is preferably inclined to reflect the light emitted from the semiconductor light emitting unit 820 to go upward. In addition, the side surface 831 of the cavity 830 may include a reflective layer 832 to improve the reflection efficiency of the light. The material of the reflective layer 832 can be anything as long as the reflection efficiency is good. For example, there are aluminum (Al), silver (Ag), distributed Bragg reflector (DBR). In addition, the cavity 830 may be filled with the transparent encapsulant 840. The transparent encapsulant 840 may include a resin 841 and a wavelength converting member 842. The wavelength converting material 842 may be any type as long as it converts the light emitted from the semiconductor light emitting part 820 into light having a different wavelength (eg, a pigment, a dye, etc.). (Sr, Ba, Ca) ₂ SiO ₄ : Eu, etc.) is preferably used. The resin 841 may be an epoxy resin, a silicone resin, or the like. In addition, the light-transmissive encapsulant 840 may additionally contain a light scattering material or the like. As the non-transparent growth substrate 810, a silicon growth substrate is preferable. The semiconductor light emitting unit 820 includes a plurality of semiconductor layers 822, a first electrode 826, and a second electrode 827. The plurality of semiconductor layers 822 may include a first semiconductor layer 823 having a first conductivity grown under the non-transparent growth substrate 810, and a second semiconductor layer 825 having a second conductivity different from the first conductivity. And an active layer 824 interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes. Although not shown, additional layers may be included, if necessary, including a buffer layer. The upper side 821 of the plurality of semiconductor layers 822 exposed by the cavity 830 may be the first semiconductor layer 823, but the upper side 821 of the plurality of semiconductor layers 822 exposed when the buffer layer is included. ) May be a buffer layer. The first electrode 826 is in electrical communication with the first semiconductor layer 823 and supplies one of electrons and holes. Although the first electrode 826 may be directly connected to the first semiconductor layer 823 as described in FIG. 2, the first electrode 826 may be provided in a separate electrical path for electrical communication with the first semiconductor layer 823. 828). However, to prevent the first electrode 826 from contacting the second semiconductor layer 825 when the first electrode 826 is in electrical communication with the first semiconductor layer 823 through the electrical passage 828. The semiconductor light emitting unit 820 may include an insulating layer 850 formed between the second semiconductor layer 825 and the first electrode 826 and on the side of the electrical passage 828. The second electrode 827 is in electrical communication with the second semiconductor layer 825 and supplies one of electrons and holes. When the insulating layer 850 is also located between the second semiconductor layer 825 and the second electrode 827, the second electrode 827 electrically connects the second electrode 827 and the second semiconductor layer 825. It may include an electrical passage 829 for connecting. The first electrode 826 and the second electrode 827 are positioned under the plurality of semiconductor layers 822. In addition, in order to increase reflection efficiency, the insulating layer 850 formed between the first electrode 826 and the second electrode 827 and the plurality of semiconductor layers 822 may be a reflective layer. When the insulating layer 850 functions as a reflective layer, light exiting to a portion where the first electrode 826 and the second electrode 827 are not formed may be reflected. The insulating layer 850 having a reflective function may be referred to as a non-conductive reflective film 850, and the non-conductive reflective film is described in detail in Korean Patent Publication No. 10-1368720. Alternatively, although not shown, a metal reflective layer may be included on the plurality of semiconductor layers 222. The method of forming the metal reflective layer is well known to those skilled in the art and is not described separately. 12 (c), a reflective wall 860 reflecting light is added to the side surface of the semiconductor light emitting unit 820 in the semiconductor light emitting device chip 800. Light emitted from the semiconductor light emitting device chip 800 by the non-transmissive growth substrate 810, the reflective wall 860, and the insulating layer 850 having the reflective function may be emitted only through the cavity 830.

13 is a view illustrating an example of a semiconductor light emitting device according to the present disclosure.

FIG. 13A illustrates a semiconductor light emitting device according to the present disclosure, which may implement white light having various colors and various color temperatures, and has excellent color rendering properties.

The semiconductor light emitting device 900 illustrated in FIG. 13A includes a plurality of holes 912 in the bottom portion 911 of the body 910, and each hole 912 includes a semiconductor light emitting device chip illustrated in FIG. 12. 800 may be located. The semiconductor light emitting device chip 800 emits light through the cavity 830 of the non-transparent growth substrate 810. In particular, when the reflective wall 860 is positioned on the side surface of the semiconductor light emitting device chip 800 as shown in FIG. 12C, light emitted from the semiconductor light emitting device chip 800 may be emitted only through the cavity 830. . In addition, the semiconductor light emitting device chip 800 positioned in each of the plurality of holes 912 emits different light from each other in the cavity 830 of the semiconductor light emitting device chip 800 located in each of the plurality of holes 912. A wavelength converting material 842 that emits other colors can be used. For example, when there are three semiconductor light emitting device chips 800 as shown in FIG. 13A, one light emits blue, one light emits green, and one light emits red. . In particular, when the light emitted from the semiconductor light emitting device chip 800 can exit only through the cavity 830 or when there is a reflective material between the semiconductor light emitting device chip 800 and the bottom portion 911 as shown in FIG. In the drawings, light emitted from the plurality of semiconductor light emitting device chips 800 may not influence each other. In particular, it may not affect the wavelength conversion material 842 in the cavity 830 of each semiconductor light emitting device chip 800. Therefore, white light having various colors and various color temperatures having high color purity can be realized, and a semiconductor light emitting device having excellent color rendering property can be obtained. In addition, since the wavelength converter 842 is included in the semiconductor light emitting device chip 800, the encapsulant 920 may not include the wavelength converter. The remaining properties, which are not described in FIG. 13A, are the same as those of the semiconductor light emitting device 600 described in FIG. 8.

The semiconductor light emitting device 1000 of FIG. 13B includes a plurality of holes 1120 in the bottom portion 1110 of the body 1100, and the semiconductor light emitting device chip 1200 is positioned in each hole 1120. can do. In addition, the body 1100 includes a partition 1130 between the plurality of holes 1120. A plurality of cavities 1140 corresponding to the plurality of holes 1120 are formed by the partition wall 1130. Different

wavelength converting materials

1310 and 1320 may be used for the plurality of cavities 1140. For example, as shown in FIG. 13B, three semiconductor light emitting device chips 1200 emitting blue light are disposed in each hole 1120, and an encapsulant 1300 having no wavelength conversion material in one cavity 1140. ) Is used, an encapsulant 1300 including a wavelength converting material 1310 that is excited by blue and emits green light is used for one cavity 1140, and red is excited by blue in one remaining cavity 1140. The encapsulant 1300 including the wavelength converting material 1320 to emit light may be used. Light emitted from the plurality of cavities 1140 by the barrier rib 1130 may not affect each other. In particular, light from the plurality of cavities 1140 may not affect the

wavelength converting materials

1310 and 1320 in each cavity 1140. Therefore, white light having various colors and various color temperatures having high color purity can be realized, and a semiconductor light emitting device having excellent color rendering property can be obtained. The remaining properties, which are not described in FIG. 13B, are the same as those of the semiconductor light emitting device 600 described in FIG. 8.

14 is a view illustrating a method of manufacturing a semiconductor light emitting device according to the present disclosure.

First, prepare a body 2000 including a hole 2110 in the bottom portion 2100 (S1). The body 2000 may be obtained through injection molding. The semiconductor light emitting device chip 2200 is positioned in the hole 2100 (S2). Then, the semiconductor light emitting device chip 2200 is covered with the encapsulant 2300 to fix the semiconductor light emitting device chip 2200 to the body 2000 (S3). The temporary fixing plate 2400 may be used to prevent the semiconductor light emitting device chip 2200 from moving before the encapsulant 2300 is fixed to the semiconductor light emitting device chip 2200. Temporary fixing plate 2400 may be a general adhesive tape. For example, it may be a blue tape. Then, if there is a temporary fixing plate 2400, the temporary fixing plate 2400 is removed, to form an adhesive portion 2500 (S4). In addition, a reinforcing material (not shown) may be formed instead of the adhesive part 2500. If the reinforcement is located between the upper and lower surfaces of the body bottom, the reinforcement may be inserted when the body is made. The order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure in a range that can be easily changed by those skilled in the art.

15 illustrates another method of manufacturing a semiconductor light emitting device according to the present disclosure.

According to the manufacturing method of FIG. 14, a plurality of semiconductor light emitting devices 3000 may be manufactured at a time, as shown in FIG. 15. For example, after obtaining the substrate 3200 having the plurality of bodies 3100 through injection molding, the plurality of semiconductor light emitting devices 3000 may be manufactured at one time according to the manufacturing method of FIG. 14. Thereafter, the semiconductor light emitting device 3000 may be cut by cutting along the cutting line 3300.

16 illustrates another example of the semiconductor light emitting device according to the present disclosure.

In the semiconductor light emitting device 4000 of FIG. 16A, the side wall 4110 of the body 4100 includes a protrusion 4111, and includes a lens 4200 formed between the protrusions 4111 and on the encapsulant. The protrusion 4111 serves as a boundary jaw so that the lens 4200 is not formed beyond the protrusion 4111 when the lens 4200 is formed. The lens 4200 may be formed using a light transmissive resin after the step S3 of forming the encapsulant in FIG. 14. In addition, in the semiconductor light emitting device 4000 of FIG. 16B, the bottom portion 4120 of the body 4100 includes a protrusion 4111, and includes a lens 4200 formed between the protrusions 4111 and on the encapsulant. do. In particular, the body 4100 includes only the bottom portion 4120 without sidewalls, and the height of the bottom portion 4120 is higher than that of the semiconductor light emitting device chip 4200. Due to the lens 4200, since the light can be sufficiently diffused, the material 4 is not required as shown in FIG. 16A, so that the encapsulant 4130 covering the entire bottom portion 4120 and the bottom portion 4120 is not needed. Can be. The remaining characteristics, which are not described in FIG. 16, are the same as those of the semiconductor light emitting device 200 described in FIG. 4.

17 illustrates another example of a semiconductor light emitting device according to the present disclosure.

In the semiconductor light emitting device 5000, the upper surface 5111 of the bottom portion 5110 of the body 5100 includes at least one of a concave portion and a convex portion. That is, the upper surface 5111 of the bottom portion 5110 of the body 5100 includes a concave portion as shown in FIG. 17 (a), a convex portion as shown in FIG. 17 (b), or continuously appears as shown in FIG. 17 (c). And a concave portion and a convex portion. When the upper surface of the bottom portion includes at least one of the concave portion and the convex portion, the light extraction efficiency of the semiconductor light emitting device 5000 may be increased, and the reason why the light extraction efficiency is increased will be described with reference to FIG. 19. The remaining characteristics not described in FIG. 17 are the same as those of the semiconductor light emitting device 300 described with reference to FIG. 5.

18 is a view illustrating various embodiments of a bottom surface of a semiconductor light emitting device according to the present disclosure.

As shown in FIG. 18A, a portion 5121 to which the upper surface 5111 of the bottom portion 5110 of the body 5100 is recessed and the side wall 5120 of the body 5100 is curved is not a flat surface. In addition, the portion 5131 to which the concave portion of the top surface 5111 of the bottom portion 5110 of the body 5100 and the hole 5130 of the body 5100 are connected also forms a curve instead of a flat surface. Since the

connected portions

5121 and 5131 form a curve rather than a flat surface, light extraction efficiency can be increased. Alternatively, as shown in FIG. 18B, the upper surface 5111 of the bottom portion 5110 of the body 5100 may include a plurality of recesses, and the closer the recess is to the semiconductor light emitting device chip 5200, the smaller the recess is. Lose. The larger the recessed portion, the higher the light extraction efficiency can be. Therefore, since the large concave portion is located far from the semiconductor light emitting device chip 5200 and the small concave portion is located closer to the semiconductor light emitting device chip 5, the semiconductor light emitting device 5000 can emit uniform light as a whole. It is the contents which I listed and delete it if it is not correct). Although not shown in FIGS. 18A and 18B, similar characteristics may be applied to convex portions instead of concave portions.

FIG. 19 is a view illustrating a principle in which light extraction is improved when a bottom surface of the semiconductor light emitting device according to the present disclosure includes at least one of a concave portion and a convex portion.

The light 5400 emitted from the semiconductor light emitting device chip 5200 of the semiconductor light emitting device 5000 is reflected by the difference in refractive index between the encapsulant 5300 and the external boundary 5500. The reflected light 5400 may be reflected as a dotted line in the concave portion of the top surface 5111 of the bottom portion 5110 of the body 5100 to exit the semiconductor light emitting device 5000. That is, when the top surface 5111 of the bottom portion 5110 is a flat surface, light that may be trapped inside the semiconductor light emitting device 5000 may include at least one of the convex portion and the concave portion of the top surface 5111 of the bottom portion 5110. As a result, it is possible to exit the semiconductor light emitting device 5000, thereby increasing the light extraction efficiency. Preferably, the light extraction efficiency is better when the upper surface 5111 of the bottom portion 5110 includes a recess.

20 illustrates another example of a semiconductor light emitting device according to the present disclosure. Figure 20 (a) is a perspective view, Figure 20 (b) is a cross-sectional view along AA ', Figure 20 (c) is a cross-sectional view showing another embodiment corresponding to Figure 20 (b), Figure 20 (d) is a manufacturing A cross section showing how.

In the semiconductor light emitting device 6000, the sidewall 6110 of the body 6100 includes two

open sections

6111 and 6112. The two

open sections

6111 and 6112 face each other. In particular, when the body 6100 has a unidirectional 6113 and a long direction 6114, it is preferable that the two

open sections

6111 and 6112 face each other on the long direction 6114 side of the body 6100. The semiconductor light emitting device 6000 may emit light through the upper and

open sections

6111 and 6112 of the semiconductor light emitting device 6000, thereby enabling three-sided light emission. In addition, as shown in FIG. 20C, the sidewalls 6110 of the

open sections

6111 and 6112 are not completely removed, but a portion of the side walls 6110 may be left to adjust the angle of light or the amount of light exiting the side surface of the semiconductor light emitting device 6000. . The method of manufacturing the semiconductor light emitting device 6000 may be manufactured by cutting along the cutting line 6200 as shown in FIG. 20 (d) after step S4 in FIG. 14. The remainder not described in FIG. 20 is the same as the semiconductor light emitting device 300 described in FIG. 5. Although two open sections are shown in FIG. 20, two or more or one can be provided as necessary.

21 illustrates another example of a semiconductor light emitting device according to the present disclosure.

In the semiconductor light emitting device 7000, the sidewall 7110 of the body 7100 includes one open section 7111 and includes a reflective layer 7300 on the encapsulant 7200. The reflective layer 7300 may be, for example, aluminum (Al), silver (Ag), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like. In addition, in order not to emit light between the reflective layer 7300 and the sidewall 7110, the height 7310 of the reflective layer 7300 is preferably lower than or equal to the height 7112 of the sidewall 7110. The semiconductor light emitting device 7000 may emit light only in the open section 7111, so that the semiconductor light emitting device 7000 emits light only to the side surface. Although only one open section is shown in FIG. 21, more than one open section is possible as needed. The remainder not described in FIG. 21 is the same as the semiconductor light emitting device 300 described in FIG. 5. The method of manufacturing the semiconductor light emitting device 7000 may be manufactured by forming a reflective layer on the encapsulant after the step S3 in FIG. 14 and cutting it along the cutting line 6200 as shown in FIG. 20 (d).

Various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a body having a bottom and sidewalls, the body including a cavity formed by the bottom and sidewalls, the body having at least one hole formed in the bottom; A semiconductor light emitting device chip located in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers for generating light by recombination of electrons and holes, and an electrode electrically connected to the plurality of semiconductor layers; And an encapsulant provided at least in the cavity to cover the semiconductor light emitting device chip, wherein the electrode of the semiconductor light emitting device chip is exposed in a lower surface direction of the bottom of the body.

(2) A semiconductor light emitting element, characterized in that a reflective layer is formed on at least one of the inner side surface of the body side wall and the upper surface of the bottom portion.

(3) A semiconductor light emitting element, wherein the reflective layer is formed on the entire upper surface of the bottom portion.

(4) A semiconductor light emitting element, wherein the reflective layer is a metal layer.

(5) The height of the bottom portion is lower than that of the semiconductor light emitting chip.

(6) A semiconductor light emitting device, characterized in that a reflective material is located between the bottom portion and the semiconductor light emitting device chip.

(7) A semiconductor light emitting element, wherein the reflecting material is a white reflecting resin.

(8) a junction portion located on the bottom surface of the body bottom portion; a junction portion located away from the electrode of the semiconductor light emitting element chip exposed in the bottom direction of the body bottom portion; semiconductor light emitting device comprising a.

(9) A semiconductor light emitting element, wherein the junction portion is made of metal.

(10) a plurality of holes, each of the semiconductor light emitting device chip is located in each hole, the metal bonding portion located on the lower surface of the body; the metal located apart from the electrode of the semiconductor light emitting chip exposed in the lower direction of the body bottom Junction portion; semiconductor light emitting device comprising a.

(11) a semiconductor light emitting device chip located in each hole; is a semiconductor light emitting device, characterized in that for emitting different colors.

(12) A semiconductor light emitting device, characterized in that the encapsulant fixes the semiconductor light emitting device chip located in the hole to the body.

(13) A semiconductor light emitting element, characterized in that the length of the bottom portion is greater than the height of the side walls.

(14) A semiconductor light emitting element, characterized in that there are a plurality of holes, and partition walls are located between the holes and the holes.

(15) A semiconductor light emitting element, characterized in that the side surface of the hole is inclined.

(16) the body includes a projection; a semiconductor light emitting device comprising a; formed between the projections and the encapsulant.

(17) A semiconductor light emitting device, characterized in that the sidewall includes at least one open section.

(18) A semiconductor light emitting element comprising two open sections of sidewalls and two open sections facing each other.

(19) A semiconductor light emitting device, characterized in that the body bottom portion has a longitudinal direction and a unidirectional direction, and two open sections are formed facing each other on the longitudinal direction side of the body bottom portion.

20. A semiconductor light emitting device comprising a; reflective layer formed on the encapsulant.

(21) A semiconductor light emitting element, characterized in that the reflective layer formed on the encapsulant is formed of a white reflective material.

(22) A semiconductor light emitting element, wherein the height of the reflective layer formed on the encapsulant is lower than or equal to the height of the sidewall.

(23) A semiconductor light emitting element comprising one open section of a side wall.

(24) A semiconductor light emitting device, characterized in that the body is made of highly reflective white resin.

(25) A semiconductor light emitting device comprising: a body including a bottom portion, the body having at least one hole formed in the bottom portion; A semiconductor light emitting device chip located in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers for generating light by recombination of electrons and holes, and an electrode electrically connected to the plurality of semiconductor layers; An encapsulant covering a semiconductor light emitting device chip; And at least one reinforcing member positioned in the body so as not to overlap with the hole in the bottom of the body, wherein the electrode of the semiconductor light emitting device chip is exposed in a lower direction of the bottom of the body.

(26) The semiconductor light emitting device, characterized in that two reinforcement is formed in the longitudinal direction of the body, the hole is located between the two reinforcement.

(27) The semiconductor light emitting device, characterized in that the reinforcing material is located between the upper surface and the lower surface of the body bottom portion.

(28) A semiconductor light emitting element, characterized in that the lower surface of the reinforcing material coincides with the lower surface of the body bottom part.

(29) A semiconductor light emitting element, wherein a part of the reinforcing material protrudes from the lower surface of the body bottom part.

30. The reinforcing material is a semiconductor light emitting device, characterized in that located on the lower surface of the body.

(31) A semiconductor light emitting element, wherein the reinforcing material is metal.

(32) a semiconductor light emitting device comprising a reinforcing material;

33. A semiconductor light emitting device comprising: a body bottom portion protection element, wherein the protection element is located on the reinforcement.

(34) The upper surface of the body bottom portion includes at least one of a concave portion and a convex portion.

(35) The upper surface of the bottom portion is a semiconductor light emitting element characterized in that the concave portion and the convex portion appear continuously.

(36) A semiconductor light emitting element characterized in that the upper surface of the bottom portion has a plurality of concave portions, and the size of the concave portion becomes smaller as it approaches the semiconductor light emitting element chip.

(37) A semiconductor light emitting element according to claim 1, wherein a portion where at least one of the concave portion and the convex portion of the upper surface of the bottom portion is connected to the hole is not a flat surface.

(38) A semiconductor light emitting element according to claim 1, wherein a portion where at least one of the concave portion and the convex portion of the upper surface of the bottom portion is connected to the side wall is not a flat surface.

According to the present disclosure, a semiconductor light emitting device in which an electrode of a semiconductor light emitting device chip is directly bonded to an external substrate can be obtained.

According to the present disclosure, even when a flip chip is used, a semiconductor light emitting device that does not require bonding between the lead frame and the flip chip may be obtained so that the amount of light emitted from the flip chip is not lost by the bonding between the lead frame and the flip chip.

In addition, according to the present disclosure it is possible to increase the light extraction efficiency by allowing the light that can be lost in the semiconductor light emitting device to go outside the semiconductor light emitting device.

Further, according to the present disclosure, a semiconductor light emitting device having three sides or side emission can be obtained.

Claims

In a semiconductor light emitting device,

A body having a bottom and sidewalls, the body including a cavity formed by the bottom and sidewalls, the body having at least one hole formed in the bottom;

A semiconductor light emitting device chip located in each hole, comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers for generating light by recombination of electrons and holes, and an electrode electrically connected to the plurality of semiconductor layers; And,

And an encapsulant provided at least in the cavity to cover the semiconductor light emitting device chip.

A semiconductor light emitting element, wherein an electrode of a semiconductor light emitting element chip is exposed in a lower surface direction of a body bottom portion.
The method according to claim 1,

A reflective layer is formed on at least one of an inner surface of a body side wall and an upper surface of a bottom portion.
The method according to claim 2,

A reflective layer is formed over the entire upper surface of the bottom portion.
The method according to claim 3,

A semiconductor light emitting element, wherein the reflective layer is a metal layer.
The method according to claim 1,

The height of the bottom portion is a semiconductor light emitting device, characterized in that lower than the height of the semiconductor light emitting device chip.
The method according to claim 1,

A semiconductor light emitting device, characterized in that the reflective material is located between the bottom and the semiconductor light emitting device chip.
The method according to claim 6,

The reflective material is a semiconductor light emitting device, characterized in that the white reflective resin.
The method according to claim 1,

And a junction part disposed on a bottom surface of the body bottom part, wherein the junction part is spaced apart from an electrode of the semiconductor light emitting device chip exposed in the bottom direction of the body bottom part.
The method according to claim 8,

The junction portion is a semiconductor light emitting device, characterized in that made of a metal.
The method according to claim 1,

There are a plurality of holes,

The semiconductor light emitting device chip is located in each hole,

And a metal junction positioned on a bottom surface of the body bottom portion, wherein the metal junction portion is spaced apart from an electrode of the semiconductor light emitting chip exposed in the bottom direction of the body bottom portion.
The method according to claim 10,

A semiconductor light emitting device chip located in each hole;

A semiconductor light emitting device characterized in that it emits different colors.
The method according to claim 1,

A semiconductor light emitting device, characterized in that the encapsulant fixes the semiconductor light emitting device chip located in the hole to the body.
The method according to claim 1,

A semiconductor light emitting device, characterized in that the length of the bottom portion is greater than the height of the side wall.
The method according to claim 1,

A plurality of holes, the semiconductor light emitting device, characterized in that the partition wall is located between the hole and the hole.
The method according to claim 1,

The side surface of the hole is inclined semiconductor light emitting device.
The method according to claim 1,

The body includes a projection; and a lens formed between the projections and the encapsulant; semiconductor light emitting device comprising a.