KR20120002104A - Method of mounting light emitting diode package - Google Patents

Method of mounting light emitting diode package Download PDF

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Publication number
KR20120002104A
KR20120002104A KR1020100062824A KR20100062824A KR20120002104A KR 20120002104 A KR20120002104 A KR 20120002104A KR 1020100062824 A KR1020100062824 A KR 1020100062824A KR 20100062824 A KR20100062824 A KR 20100062824A KR 20120002104 A KR20120002104 A KR 20120002104A
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KR
South Korea
Prior art keywords
metal layer
light emitting
emitting diode
circuit board
printed circuit
Prior art date
Application number
KR1020100062824A
Other languages
Korean (ko)
Other versions
KR101645008B1 (en
Inventor
황웅준
Original Assignee
서울반도체 주식회사
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Filing date
Publication date
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to KR1020100062824A priority Critical patent/KR101645008B1/en
Publication of KR20120002104A publication Critical patent/KR20120002104A/en
Application granted granted Critical
Publication of KR101645008B1 publication Critical patent/KR101645008B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

Disclosed is a light emitting diode package mounting method. This method includes preparing a fired metal layer having solder coating layers on each side. The ignited metal layer is disposed between the surface mount light emitting diode package and the printed circuit board. The ignited metal layer is ignited to bond the surface mount light emitting diode package and the printed circuit board. Thus, there is no need to use reflow, thereby preventing the package from being exposed to high temperatures and simplifying the package mounting process.

Description

LED package mounting method {METHOD OF MOUNTING LIGHT EMITTING DIODE PACKAGE}

The present invention relates to a method of mounting a light emitting diode package, and more particularly, to a method of mounting a light emitting diode package on an electronic component such as a printed circuit board.

The LED package is generally used in a board such as a printed circuit board. Conventionally, in order to mount a light emitting diode package on a printed circuit board, a lead pin is provided in the light emitting diode package, and the lead pin is inserted into a through hole of the printed circuit board. However, the LED package mounting using the lead pin is difficult to dissipate heat generated inside the package, and thus it is difficult to apply to a high power LED package having high heat generation. Therefore, in the case of a high power light emitting diode package, in consideration of heat dissipation characteristics, it is mainly manufactured as a surface-mount package, and the junction area with the board is increasing for efficient heat dissipation.

The surface mount package is bonded onto the board by patterning the solder paste in a printing process on a board such as a printed circuit board, placing the package thereon, and then performing a reflow process using an oven or the like.

However, as the junction area between the package and the board increases, the thickness of the solder layer formed by the reflow process is not uniform for each product, and voids are formed inside the solder layer, resulting in product defects. Furthermore, increasing the thickness of the solder layer and forming voids reduce the heat dissipation characteristics of the package and shorten the life of the LED package.

An object of the present invention is to provide a light emitting diode package mounting method capable of forming a bonding layer having a uniform thickness between a light emitting diode package and a printed circuit board.

Another object of the present invention is to provide a light emitting diode package mounting method capable of suppressing the generation of voids in a solder layer joining a light emitting diode package and a printed circuit board.

Another problem to be solved by the present invention is to provide a light emitting diode package mounting method that can simplify the process of mounting the light emitting diode package on a printed circuit board.

According to one aspect of the present invention, there is provided a light emitting diode package mounting method. The method comprises preparing a fired metal layer having a solder coating layer on each side, and placing the fired metal layer between a surface mount light emitting diode package and a printed circuit board, and applying a force to the surface mount light emitting diode package against the printed circuit board. Bonding the surface mounted light emitting diode package and the printed circuit board by igniting the pyrophoric metal layer while applying a.

Regarding the pyrophoric metal layer, a paper published in the Journal of the Applied Physics on Jan. 1, 2004 by Wang et al. Entitled "Joining of Stainless-steel specimens with nanostructured Al / Ni foils" (J.Appl.Phy Vol. 95, No. 1, p248-256. This paper describes a technique for joining stainless steel samples using nanostructured Al / Ni foils. Although the ignition metal layer of this invention is not specifically limited, The nano structured Al / Ni ignition metal layer disclosed in the said paper can be used.

However, the above paper discloses a technique of arranging a separate solder sheet with a nanostructured Al / Ni ignited metal layer foil between stainless steel samples and bonding the stainless steel sample by igniting the ignited metal layer. In contrast, the present invention eliminates the need for disposing separate solder sheets by forming solder coating layers on both sides of the fired metal layer, thereby simplifying the arrangement and alignment of the solder sheets and the fired metal layer.

In some embodiments, disposing the fired metal layer may include placing a fired metal layer having the solder coating layer on the printed circuit board. The pyrophoric metal layer having the solder coating layer may be aligned and positioned on the bonding pads and the landing pad, for example, on the printed circuit board.

In other embodiments, disposing the fired metal layer may include placing a fired metal layer having the solder coating layer on the light emitting diode package. The ignited metal layer having the solder coating layer may be aligned with the lead terminals of the LED package and the bottom surface of the package.

On the other hand, the pyrophoric metal layer may include a nanostructured multilayer film in which nano-thickness Al and nano-thickness Ni are repeatedly stacked and solder coating layers coated on both surfaces of the multilayer film. Here, the solder coating layer may be, for example, Au-Sn.

In some embodiments, the solder coating layer may be coated on both sides of the multilayer by a plating or sputtering process. That is, a ignition metal layer made of a multi-layered film having a nano structure may be prepared in advance, and solder coating layers may be formed on both surfaces of the ignition metal layer.

Alternatively, the ignition metal layer having the solder coating layer may be prepared by sequentially depositing a solder coating layer, a ignition metal layer and a solder coating layer on the printed circuit board or the LED package. Thereafter, the light emitting diode package and the printed circuit board are aligned to face each other so that the ignited metal layer is disposed between the light emitting diode package and the printed circuit board. The solder coating layer and pyrophoric metal layer may be deposited using plating or sputtering techniques.

According to the present invention, since the LED package and the printed circuit board are bonded by using a ignition metal layer having a uniform thickness, a bonding layer having a uniform thickness can be formed, and in particular, a solder for bonding the LED package and the printed circuit board. The generation of voids in the layer can be suppressed. Furthermore, since the ignition metal layer is used, the bonding layer can be formed by an electric pulse or the like, so that the number of processes used in a conventional soldering process such as a solder layer printing process and a reflow process can be reduced. Furthermore, the reflow process can be omitted, thereby preventing the light emitting diode package from being exposed to high heat. In addition, since a fired metal layer having solder coating layers formed on both surfaces thereof is used, the arrangement and alignment of the solder layer and the fired metal layer can be simplified.

1 is a schematic diagram illustrating a light emitting diode package mounting method according to an embodiment of the present invention.
2 is a cross-sectional view for describing a ignition metal layer having a solder coating layer according to an embodiment of the present invention.
3 shows an optical module mounted with a light emitting diode package according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the same reference numerals denote the same components, and the width, length, thickness, etc. of the components may be exaggerated for convenience.

FIG. 1 is a schematic view illustrating a method of mounting a light emitting diode package 10 according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating a ignition metal layer 20 having a solder coating layer.

Referring to FIG. 1, first, an ignition metal layer 20 having solder coating layers on both surfaces thereof is prepared. As shown in FIG. 2, the pyrophoric metal layer 20 having the solder coating layer includes nano-thickness metal layers 23a and 23b such as Al / Ni, Al / Ti, Ni / Si, or Nb / Si. The fired metal layer 23 repeatedly stacked and the solder coating layers 25a and 25b formed on both surfaces of the fired metal layer 23 are included.

The pyrophoric metal layer 23 may be formed using, for example, a plating or sputtering technique. The solder coating layer may be formed using plating or sputtering techniques on both sides of the pyrophoric metal layer after the pyrophoric metal layer 23 is formed. Alternatively, the fired metal layer 20 may be provided by sequentially forming the solder coating layer 25a, the fired metal layer 23, and the solder coating layer 25b on the sacrificial substrate by using a plating or sputtering technique, and then removing the sacrificial substrate. It may be.

Thereafter, the ignited metal layer 20 is disposed between the LED package 10 and the printed circuit board 30. Here, the light emitting diode package 10 is not particularly limited, but may include a package body 11, lead terminals 13a and 13b, a heat sink 15, a light emitting diode 17, and a bonding wire. have. In addition, the printed circuit board 30 may include bonding pads 33a and 33b and a landing pad 33c. The LED package 10 is a surface mount type, the lead terminals 13a and 13b are bonded to the bonding pads 33a and 33b of the printed circuit board 30, respectively, and the package body 11 or the heat sink. 15 is bonded to the landing pad 33c.

Accordingly, the ignited metal layer 20 may be disposed on the printed circuit board 30 in alignment with the bonding pads 33a and 33b and the landing pad 33c of the printed circuit board 30, or the package 10. May be aligned with the lead terminals 13a and 13b of the package body and the package body 11 and disposed on the bottom surfaces thereof.

For example, the ignition metal layer 20 is prepared in the form of a foil, and the pads on the printed circuit board 30 are fixed by fixing the ignition metal layer 20 on the printed circuit board 30 and patterning the ignition metal layer 20. The ignited metal layer 20 can be aligned to the 33a, 33b, 33c.

After the ignited metal layer 20 is disposed, the ignited metal layer 23 is ignited while applying force to the package 10 with respect to the printed circuit board 30. For example, the ignition metal layer 23 may be ignited by an electrical pulse, for example, a spark or a flame, and diffusion of atoms may proceed at the ignition point to generate metal bonds between different metal layers and generate heat. This heat continues to cause the diffusion of atoms in the total pyrophoric metal layer 23, resulting in metal bonding between the metal atoms of the different metal layers. Accordingly, the solder coating layers 25a and 25b formed on both surfaces thereof are melted by the heat generated by the pyrophoric metal layer 23, and the LED package 10 and the printed circuit board 30 may be bonded to each other.

In this embodiment, in order to improve the bonding of the light emitting diode package 10, a bonding reinforcing layer such as Au, Ni, or the like is provided on the lead terminals 13a and 13b of the package 10 and the bottom surface of the package body 11. Can be formed. In addition, a bonding reinforcement layer may also be formed on the pads 33a, 33b, 33c of the printed circuit board.

As the ignition metal layer 23 is ignited, as shown in FIG. 3, an optical module having a bonding layer 20a formed between the printed circuit board 30 and the package 30 is formed. This bonding layer 20a includes a bond between different metal layers 23a and 23b in the ignition metal layer 23 and a chemical bond between the solder coating layers 23a and 23b and the ignition metal layers.

On the other hand, in the present embodiment, it has been described that the ignition metal layer 20 having the solder coating layer is prepared separately from the printed circuit board 30 or the package 10, and that the ignition metal layer 20 is provided in the form of a foil. The ignited metal layer 20 may be formed on the package 10 or the printed circuit board 30. For example, the solder coating layer 25a, the pyrophoric metal layer 23, and the solder coating layer 25b are sequentially formed on the printed circuit board 30 using plating or sputtering techniques to prepare the pyrophoric metal layer 20 on the printed circuit board. Can be. Thereafter, the package 10 is aligned on the printed circuit board 30 so that the ignited metal layer 20 is disposed between the package 10 and the printed circuit board 30.

In addition, in the present embodiment, the light emitting diode package 10 is described as including a heat sink, but the light emitting diode package 10 is not limited to this, and the present invention is a surface mount type of all kinds of light emitting diodes. Applicable to mounting packages.

Although some embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various changes and modifications may be made by those skilled in the art without departing from the technical spirit of the present invention. Such modifications and variations are included in the scope of the present invention as defined in the following claims.

10: LED package
11: package body
13a, 13b: lead terminal
15: heatsink
17: light emitting diode
19: bonding reinforcement layer
20: fired metal layer with solder layer
20a: bonding layer
23: ignition metal layer
23a, 23b: nano-thick metal layer
25a, 25b: solder coating layer
30: printed circuit board
33a, 33b: bonding pads
33c: landing pad

Claims (8)

Prepare fired metal layers each having a solder coating layer on both sides,
Arranging the ignition metal layer between a surface-mount LED package and a printed circuit board,
And bonding the surface mounted light emitting diode package and the printed circuit board by igniting the ignited metal layer while applying a force to the surface mounted light emitting diode package with respect to the printed circuit board. The method according to claim 1,
Disposing the fired metal layer includes placing a fired metal layer having the solder coating layer on the printed circuit board. The method according to claim 1,
Disposing the fired metal layer includes placing a fired metal layer having the solder coating layer on the light emitting diode package. The method according to claim 1,
The ignition metal layer,
A method of mounting a light emitting diode package comprising a nano-layered multilayer film in which nano-thick Al and nano-thick Ni are repeatedly stacked and a solder coating layer coated on both surfaces of the multilayer film. The method of claim 4,
The solder coating layer is a light emitting diode package mounting method is coated on both sides of the multilayer film by a plating or sputtering process. The method of claim 4,
The solder coating layer is a light emitting diode package mounting method, characterized in that Au-Sn. The method according to claim 1,
The preparing the fired metal layer includes depositing a solder coating layer, a fired metal layer, and a solder coating layer on the printed circuit board or the LED package. The method according to claim 7,
Wherein said deposition is performed using a plating or sputtering technique.
KR1020100062824A 2010-06-30 2010-06-30 Method of mounting light emitting diode package KR101645008B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100062824A KR101645008B1 (en) 2010-06-30 2010-06-30 Method of mounting light emitting diode package

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Application Number Priority Date Filing Date Title
KR1020100062824A KR101645008B1 (en) 2010-06-30 2010-06-30 Method of mounting light emitting diode package

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Publication Number Publication Date
KR20120002104A true KR20120002104A (en) 2012-01-05
KR101645008B1 KR101645008B1 (en) 2016-08-03

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017061844A1 (en) * 2015-10-08 2017-04-13 주식회사 세미콘라이트 Semiconductor light-emitting device
CN106571418A (en) * 2015-10-08 2017-04-19 世迈克琉明有限公司 Semiconductor light emitting device
KR20170055459A (en) * 2015-10-08 2017-05-19 주식회사 세미콘라이트 Semiconductor light emitting device
KR20170001916U (en) 2015-11-24 2017-06-01 대우조선해양 주식회사 Air amplifier for dry and ventilation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177155A (en) * 1999-12-17 2001-06-29 Rohm Co Ltd Light emitting chip device with case
KR100579388B1 (en) * 2004-12-28 2006-05-12 서울반도체 주식회사 Light emitting diode package employing a heat sink with a sprial groove
JP2009141317A (en) * 2007-11-16 2009-06-25 Omron Corp Optical semiconductor package, photoelectric sensor with same, and manufacturing method for optical semiconductor package

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177155A (en) * 1999-12-17 2001-06-29 Rohm Co Ltd Light emitting chip device with case
KR100579388B1 (en) * 2004-12-28 2006-05-12 서울반도체 주식회사 Light emitting diode package employing a heat sink with a sprial groove
JP2009141317A (en) * 2007-11-16 2009-06-25 Omron Corp Optical semiconductor package, photoelectric sensor with same, and manufacturing method for optical semiconductor package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017061844A1 (en) * 2015-10-08 2017-04-13 주식회사 세미콘라이트 Semiconductor light-emitting device
CN106571418A (en) * 2015-10-08 2017-04-19 世迈克琉明有限公司 Semiconductor light emitting device
KR20170055459A (en) * 2015-10-08 2017-05-19 주식회사 세미콘라이트 Semiconductor light emitting device
US10008648B2 (en) 2015-10-08 2018-06-26 Semicon Light Co., Ltd. Semiconductor light emitting device
CN106571418B (en) * 2015-10-08 2021-03-30 世迈克琉明有限公司 Semiconductor light emitting device
KR20170001916U (en) 2015-11-24 2017-06-01 대우조선해양 주식회사 Air amplifier for dry and ventilation

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Publication number Publication date
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