CN104576414B - A kind of flip chip bonding humidity process for protecting method - Google Patents
A kind of flip chip bonding humidity process for protecting method Download PDFInfo
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- CN104576414B CN104576414B CN201410827891.8A CN201410827891A CN104576414B CN 104576414 B CN104576414 B CN 104576414B CN 201410827891 A CN201410827891 A CN 201410827891A CN 104576414 B CN104576414 B CN 104576414B
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- flip chip
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000008569 process Effects 0.000 title claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims abstract description 38
- 238000000576 coating method Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000003822 epoxy resin Substances 0.000 claims abstract description 15
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 238000005336 cracking Methods 0.000 claims description 19
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 239000010426 asphalt Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 238000003466 welding Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- -1 perfluoro Chemical group 0.000 description 4
- 229920000052 poly(p-xylylene) Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81909—Post-treatment of the bump connector or bonding area
- H01L2224/8192—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The present invention provides a kind of flip chip bonding humidity process for protecting method, including:Circuit is dried;It is put into vacuumize process in vacuum coaters;Load coating material and heat;Vacuum covering is carried out to circuit;Fill epoxy resin.After above-mentioned processing, pad surface, chip lower surface and upper surface of base plate in encapsulating structure are coated with coating material, and this film substantially increases the humidity barrier propterty of flip chip bonding packaging structure, and improves Joint Strength.This technique is mainly used in non-airtight flip chip bonding circuit package technique, can ensure the integrality of non-airtight flip chip bonding circuit protection, and can obtain the overcoat of excellent homogeneity.
Description
Technical field
The invention belongs to protection technology field, and in particular to a kind of flip chip bonding humidity process for protecting method, suitable for falling
Welding equipment potting process.
Background technology
Flip Chip Bond Technique is a kind of downward direct interconnection technique of chip front side, is made first on the metal pad of chip
Metal salient point, then by the active face-down of chip, the salient point on chip is aligned with the metal pad on substrate, pass through heating
Or pressurization makes chip and substrate form reliable and stable mechanical connection and electrical connection.It can be made using Flip Chip Bond Technique two-dimentional mutual
Even density reaches maximum, simultaneously as metal pad can be placed on the whole surface of chip, therefore in the chip of same area
On, compared with conventional lead bonding technology, the density and quantity of metal pad can be greatly improved, and due to significantly
Shorten signal transmission path so that flip chip bonding has excellent electrical property and reliability.
Conventional flip sealing dress uses non-airtight encapsulating structure, makes upside-down mounting welding core exposure in atmosphere, and upside-down mounting
The underfill of weldering is a kind of epoxy resin material, and during long-term storage, the hydrone in air has very strong
Penetrating power, it can penetrate into package interior by macromolecule gap.By being populated with moisture on the interface of different materials
Son, interface debonding can be caused.In addition, if hydrone is gathered at Flip-chip solder joint, chemical attack and short circuit problem, nothing can be caused
Method meets long-term moistureproof, the corrosion resistant requirement of flip chip bonding circuit.As shown in Fig. 2 existing flip chip bonding packaging structure includes chip 1
And the substrate 2 being connected with the chip 1.Chip 1 has upper surface and the lower surface relative with upper surface.The lower surface of chip 1
It is connected with the upper surface of substrate 2 by solder joint 3.The flip chip bonding packaging structure also includes being covered in the lower surface of chip 1, the table of solder joint 3
Face and the filling glue 4 of the upper surface of substrate 2, the filling glue use epoxide resin material.
But above-mentioned flip chip bonding packaging structure, in the case of external environment condition is in high humidity, steam easily penetrates into from filling Jiao4Chu
Inside, cause Analyse of Flip Chip Solder Joint to corrode, finally influence circuit performance.
The content of the invention
The technology of the present invention solves problem:A kind of overcome the deficiencies in the prior art, there is provided anti-nurse of flip chip bonding humidity
Process, to improve the protection against the tide of flip chip bonding circuit, anti-corrosion capability.
The present invention technical solution be:
A kind of flip chip bonding humidity process for protecting method, comprises the following steps:
(1) circuit after flip chip bonding is handled is dried;
(2) the flip chip bonding circuit after step (1) processing is put into vacuum coaters and carries out vacuumize process so that be true
Vacuum in the vacuum chamber of empty coating machine is 15 ± 2mTorr;
(3) coating material is loaded in the cracking room of vacuum coaters, coating material is heated, reaches its temperature
The cracking temperature of the coating material;
(4) valve of cracking room is opened, the coating material after step (3) processing is entered vacuum chamber, and be deposited on down
Welding equipment circuit surface, in deposition process, the vacuum in vacuum chamber should control the temperature in 50 ± 2mTorr, vacuum chamber should
For 30 ± 5 DEG C;When the vacuum in vacuum chamber is down to 15 ± 2mTorr, the valve of cracking room is closed;
(5) filling of epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realizes overcoat shading ring
The purpose of oxygen tree fat.
Preferably, the coating material uses perfluoro Parylene, and coating material is added in the step (3)
Heat, its temperature is set to reach 670 DEG C.
Preferably, before step (5) is performed, the coat thickness of the flip chip bonding circuit to completing coating through step (4)
Tested, if after tested, the thickness difference of most thick coat and most scumbling coating is in ± 1 micrometer range, then it is assumed that apply
Laminating lattice;Otherwise, the vacuum in vacuum chamber is adjusted, untill coat thickness difference meets to require.
The present invention has the advantages that compared with prior art:
(1) present invention is improved for traditional non-airtight flip chip bonding circuit humidity protective capacities deficiency, by right
Flip chip bonding circuit carries out protective treatment, improves that circuit is moisture resistance, corrosion resistant ability;
(2) present invention to flip chip bonding circuit by carrying out protective treatment, under the die surface, upper surface of base plate, solder joint table
Face increases thin film, can effectively improve the intensity of solder joint;
(3) present invention can improve the resistance to of non-airtight flip chip bonding circuit by carrying out protective treatment to flip chip bonding circuit
Moist ability;
(4) present invention is applied to non-airtight flip-chip packaging processes.
Brief description of the drawings
Fig. 1 is the flow chart according to the method for the present invention;
Fig. 2 is the flip chip bonding packaging structure schematic diagram before the flip chip bonding humidity process for protecting for implementing the present invention;
Fig. 3 is to have implemented the encapsulating structure schematic diagram after flip chip bonding humidity process for protecting of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments to according to the present invention flip chip bonding humidity process for protecting method do into
One step is described in detail.
Fig. 2 shows the state of the flip chip bonding packaging structure before implementing method of the invention, and this figure also illustrates existing
Flip chip bonding packaging structure.As illustrated, after such a encapsulation process, the lower surface of chip 1, the surface of solder joint 3 and
The upper surface of substrate 2 is filled with filling glue 4.If in the environment of high humidity, steam easily penetrates into inside from filling Jiao4Chu, draws
Analyse of Flip Chip Solder Joint corrosion is played, finally influences circuit performance.The present invention is directed to such a flip chip bonding circuit humidity protective capacities not
Foot is improved, and by carrying out protective treatment to flip chip bonding circuit, improves moisture resistance, the corrosion resistant ability of circuit.
Specifically, as shown in figure 1, the method according to the invention comprises the following steps:
(1) circuit after flip chip bonding is handled is dried;
(2) the flip chip bonding circuit after step (1) processing is put into vacuum coaters and carries out vacuumize process so that be true
Vacuum in the vacuum chamber of empty coating machine is 15 ± 2mTorr;
(3) coating material is loaded in the cracking room of vacuum coaters, coating material is heated, reaches its temperature
The cracking temperature of the coating material;
(4) valve of cracking room is opened, the coating material after step (3) processing is entered vacuum chamber, and be deposited on down
Welding equipment circuit surface, in deposition process, the vacuum in vacuum chamber should control the temperature in 50 ± 2mTorr, vacuum chamber should
For 30 ± 5 DEG C;When the vacuum in vacuum chamber is down to 15 ± 2mTorr, the valve of cracking room is closed;
(5) filling of epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realizes overcoat shading ring
The purpose of oxygen tree fat.
The flip chip bonding humidity process for protecting method of the present invention, by by the circuit of the flip chip bonding packing forms shown in Fig. 2
Dried, then circuit is positioned in vacuum coaters, vacuumized, vacuum reaches 15 ± 2mTorr;By coating material
Load in the cracking room of vacuum coaters, coating material is heated, its temperature is reached the cracking temperature of the coating material;
The valve in cracking room is opened, coating material is entered vacuum chamber, the flip chip bonding circuit surface being deposited on rack, deposition
During by the vacuum degree control in vacuum chamber in 50m ± 2Torr, temperature in vacuum chamber is 30 ± 5 DEG C;Work as vacuum
When vacuum in chamber is down to 15 ± 2mTorr, the valve of cracking room is closed, completes coating.Finally, fallen to completing protection
Welding equipment circuit carries out the filling of epoxy resin, realizes the purpose of overcoat isolation epoxy resin.Vacuum is controlled in deposition process
Chamber temp helps to coat molecule deposition on object is applied at 30 ± 5 DEG C;The vacuum of vacuum chamber is controlled 15
During ± 2mTorr, the uniformity and compactness of coat are advantageously ensured that.
Encapsulating structure after the process processing of the present invention is as shown in Figure 3.Humidity flip chip bonding encapsulation after processing
Structure includes the substrate 11 that chip 10 and the chip 10 connect.Wherein, the chip 10 includes upper surface, relative with upper surface
Lower surface, it is arranged on the lower surface of chip 10, the solder joint 12 of the upper surface of substrate 11.The flip chip bonding packaging structure also includes being covered in core
The protection film 14 of the lower surface of piece 10, the surface of solder joint 12 and the upper surface of substrate 11, film 14 isolate solder joint 12 and filling glue 13, should
Filling glue uses epoxide resin material.
After process processing by the present invention, in the lower surface of chip, the upper surface of substrate and pad surface
The thin polymer film of vapour deposition is just formd between epoxy resin, this film substantially increases the encapsulation of non-airtight flip chip bonding
The humidity barrier propterty of structure, and improve Joint Strength.This technique is mainly used in non-airtight flip chip bonding circuit envelope
Fill technique in, first according to circuit appearance and size carry out frock (frock can by those skilled in the art according to be actually needed into
Row is corresponding to be set, and is not limited herein) design, it would be desirable to it is exposed outside to carry out the position of protective treatment, using can gas phase sink
Long-pending polymer carries out surfacecti proteon, by control protective materials weight and initialization process middle chamber vacuum it is non-to realize
Air-tightness flip chip bonding process for protecting.This process can ensure the integrality of non-airtight flip chip bonding circuit protection, and can obtain
To the overcoat of excellent homogeneity.
Preferably, coating material uses perfluoro Parylene, corresponding in this, to coating material in the step (3)
Heated, its heating-up temperature should reach 670 DEG C.
Preferably, can be before step (5) be performed, to being completed through step (4) according to the coat thickness being actually needed
The coat thickness of the flip chip bonding circuit of coating is tested, if after tested, the thickness of most thick coat and most scumbling coating
Difference is in ± 1 micrometer range, then it is assumed that coating is qualified, if thickness difference is more than ± 1 micron, can adjust in vacuum chamber
Vacuum, until coat thickness difference meets to require.
Embodiment 1
Step (1), using 2060 type vacuum coaters, flip chip bonding circuit is dried first, is then loaded into 2060 types
The vacuum chamber of vacuum coaters, is vacuumized, and its vacuum is reached 15mTorr;
Step (2), by perfluoro Parylene load 2060 type vacuum coaters cracking room in;Perfluoro is gathered
Paraxylene is heated, and its temperature is reached 670 DEG C;The valve in cracking room is opened, makes perfluoro Parylene material
Enter vacuum chamber by spreading conduit, the integrated circuit surface being deposited on rack, in deposition process, by vacuum chamber
Vacuum degree control in 50 ± 2mTorr, temperature in vacuum chamber is 30 DEG C;
Step (3), when the vacuum in vacuum chamber is down to 15mTorr, close the valve of cracking room, complete coating
Evaporation.
The flip chip bonding circuit coat thickness completed to coating is tested, and test equipment is DEKTAK6M type step instruments,
It is 0.7 micron (i.e. difference of most thick film layers and most film layer) to measure insulating film layer thickness difference.Prove the painting after above-mentioned processing
Coating thickness is qualified.
Step (4), the filling that epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realize overcoat
Isolate the purpose of epoxy resin.
Moisture-proof test is carried out to the encapsulating structure after above-mentioned processing, method of testing measures down with reference to GJB548-2005
The welding equipment circuit moisture-proof time reaches 3000h, and circuit massless problem.
From above-described embodiment, method that the present invention uses vacuum covering, by surface under the die, pad surface with
And upper surface of base plate coating protection film, epoxide resin material is refilled afterwards, ensure that the moisture resistance of the encapsulating structure after processing
Wet effect.Coated film has good insulation, moisture-proof.The process of the present invention is applied to the non-airtight of different size
Flip chip bonding circuit, therefore, can be in association area extensive use.
Here, it should be noted that the content not being described in detail in this specification, is that those skilled in the art pass through this theory
What description and prior art in bright book can be realized, therefore, do not repeat.
The preferred embodiments of the present invention are the foregoing is only, are not used for limiting the scope of the invention.For ability
For the technical staff in domain, on the premise of not paying creative work, some modification and replacement can be made to the present invention,
All such modifications and replacement should be all included within the scope of the present invention.
Claims (3)
- A kind of 1. flip chip bonding humidity process for protecting method, it is characterised in that comprise the following steps:(1) circuit after flip chip bonding is handled is dried;(2) the flip chip bonding circuit after step (1) processing is put into vacuum coaters and carries out vacuumize process so that vacuum applies It is 15 ± 2mTorr to cover the vacuum in the vacuum chamber of machine;(3) coating material is loaded in the cracking room of vacuum coaters, coating material is heated, its temperature is reached the painting Cover the cracking temperature of material;(4) valve of cracking room is opened, the coating material after step (3) processing is entered vacuum chamber, and be deposited on flip chip bonding Circuit surface, in deposition process, the vacuum in vacuum chamber should control the temperature in 50 ± 2mTorr, vacuum chamber to should be 30 ±5℃;When the vacuum in vacuum chamber is down to 15 ± 2mTorr, the valve of cracking room is closed;(5) filling of epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realizes that overcoat isolates asphalt mixtures modified by epoxy resin The purpose of fat;Humidity flip chip bonding packaging structure after processing includes the substrate that chip (10) and the chip (10) connect (11);Wherein, the chip (10) includes upper surface, the lower surface relative with upper surface, is arranged on chip (10) lower surface, substrate (11) solder joint (12) of upper surface;The flip chip bonding packaging structure also includes being covered in chip (10) lower surface, solder joint (12) surface With the protection film (14) of substrate (11) upper surface, film (14) isolation solder joint (12) and filling glue (13), the filling glue use Epoxide resin material.
- 2. flip chip bonding humidity process for protecting method as claimed in claim 1, it is characterised in that the coating material is using complete Fluoro-polypxylene, coating material is heated in the step (3), its temperature is reached 670 DEG C.
- 3. flip chip bonding humidity process for protecting method as claimed in claim 1, it is characterised in that before step (5) is performed, The coat thickness of flip chip bonding circuit that coating is completed through step (4) is tested, if after tested, most thick coat with most The thickness difference of scumbling coating is in ± 1 micrometer range, then it is assumed that coating is qualified;Otherwise, the vacuum in vacuum chamber is adjusted, Untill coat thickness difference meets to require.
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CN201410827891.8A CN104576414B (en) | 2014-12-26 | 2014-12-26 | A kind of flip chip bonding humidity process for protecting method |
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CN201410827891.8A CN104576414B (en) | 2014-12-26 | 2014-12-26 | A kind of flip chip bonding humidity process for protecting method |
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CN104576414B true CN104576414B (en) | 2017-12-01 |
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CN106531858B (en) * | 2016-12-30 | 2019-03-05 | 青岛杰生电气有限公司 | Ultraviolet LED packaging method |
CN110113892B (en) * | 2019-06-04 | 2020-09-25 | 山东康威通信技术股份有限公司 | Multilayer composite protective layer applied to PCB and method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348738B1 (en) * | 1997-09-23 | 2002-02-19 | International Business Machines Corporation | Flip chip assembly |
CN101603678A (en) * | 2009-07-15 | 2009-12-16 | 中国科学院上海有机化学研究所 | The waterproof sealing structure of LED module and preparation technology thereof |
CN101894896A (en) * | 2010-06-13 | 2010-11-24 | 东南大学 | Glass ball cavity encapsulation method of light emitting diode |
CN102044621A (en) * | 2010-11-19 | 2011-05-04 | 东南大学 | Wafer-level glass ball cavity package method for light emitting diode flip chip |
-
2014
- 2014-12-26 CN CN201410827891.8A patent/CN104576414B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348738B1 (en) * | 1997-09-23 | 2002-02-19 | International Business Machines Corporation | Flip chip assembly |
CN101603678A (en) * | 2009-07-15 | 2009-12-16 | 中国科学院上海有机化学研究所 | The waterproof sealing structure of LED module and preparation technology thereof |
CN101894896A (en) * | 2010-06-13 | 2010-11-24 | 东南大学 | Glass ball cavity encapsulation method of light emitting diode |
CN102044621A (en) * | 2010-11-19 | 2011-05-04 | 东南大学 | Wafer-level glass ball cavity package method for light emitting diode flip chip |
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