CN104576414B - A kind of flip chip bonding humidity process for protecting method - Google Patents

A kind of flip chip bonding humidity process for protecting method Download PDF

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Publication number
CN104576414B
CN104576414B CN201410827891.8A CN201410827891A CN104576414B CN 104576414 B CN104576414 B CN 104576414B CN 201410827891 A CN201410827891 A CN 201410827891A CN 104576414 B CN104576414 B CN 104576414B
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China
Prior art keywords
flip chip
chip bonding
vacuum
circuit
coating material
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CN201410827891.8A
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CN104576414A (en
Inventor
赵元富
姚全斌
李京苑
练滨浩
熊盛阳
黄颖卓
姜学明
田玲娟
林鹏荣
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Beijing Microelectronic Technology Institute
Mxtronics Corp
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909Post-treatment of the bump connector or bonding area
    • H01L2224/8192Applying permanent coating, e.g. protective coating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The present invention provides a kind of flip chip bonding humidity process for protecting method, including:Circuit is dried;It is put into vacuumize process in vacuum coaters;Load coating material and heat;Vacuum covering is carried out to circuit;Fill epoxy resin.After above-mentioned processing, pad surface, chip lower surface and upper surface of base plate in encapsulating structure are coated with coating material, and this film substantially increases the humidity barrier propterty of flip chip bonding packaging structure, and improves Joint Strength.This technique is mainly used in non-airtight flip chip bonding circuit package technique, can ensure the integrality of non-airtight flip chip bonding circuit protection, and can obtain the overcoat of excellent homogeneity.

Description

A kind of flip chip bonding humidity process for protecting method
Technical field
The invention belongs to protection technology field, and in particular to a kind of flip chip bonding humidity process for protecting method, suitable for falling Welding equipment potting process.
Background technology
Flip Chip Bond Technique is a kind of downward direct interconnection technique of chip front side, is made first on the metal pad of chip Metal salient point, then by the active face-down of chip, the salient point on chip is aligned with the metal pad on substrate, pass through heating Or pressurization makes chip and substrate form reliable and stable mechanical connection and electrical connection.It can be made using Flip Chip Bond Technique two-dimentional mutual Even density reaches maximum, simultaneously as metal pad can be placed on the whole surface of chip, therefore in the chip of same area On, compared with conventional lead bonding technology, the density and quantity of metal pad can be greatly improved, and due to significantly Shorten signal transmission path so that flip chip bonding has excellent electrical property and reliability.
Conventional flip sealing dress uses non-airtight encapsulating structure, makes upside-down mounting welding core exposure in atmosphere, and upside-down mounting The underfill of weldering is a kind of epoxy resin material, and during long-term storage, the hydrone in air has very strong Penetrating power, it can penetrate into package interior by macromolecule gap.By being populated with moisture on the interface of different materials Son, interface debonding can be caused.In addition, if hydrone is gathered at Flip-chip solder joint, chemical attack and short circuit problem, nothing can be caused Method meets long-term moistureproof, the corrosion resistant requirement of flip chip bonding circuit.As shown in Fig. 2 existing flip chip bonding packaging structure includes chip 1 And the substrate 2 being connected with the chip 1.Chip 1 has upper surface and the lower surface relative with upper surface.The lower surface of chip 1 It is connected with the upper surface of substrate 2 by solder joint 3.The flip chip bonding packaging structure also includes being covered in the lower surface of chip 1, the table of solder joint 3 Face and the filling glue 4 of the upper surface of substrate 2, the filling glue use epoxide resin material.
But above-mentioned flip chip bonding packaging structure, in the case of external environment condition is in high humidity, steam easily penetrates into from filling Jiao4Chu Inside, cause Analyse of Flip Chip Solder Joint to corrode, finally influence circuit performance.
The content of the invention
The technology of the present invention solves problem:A kind of overcome the deficiencies in the prior art, there is provided anti-nurse of flip chip bonding humidity Process, to improve the protection against the tide of flip chip bonding circuit, anti-corrosion capability.
The present invention technical solution be:
A kind of flip chip bonding humidity process for protecting method, comprises the following steps:
(1) circuit after flip chip bonding is handled is dried;
(2) the flip chip bonding circuit after step (1) processing is put into vacuum coaters and carries out vacuumize process so that be true Vacuum in the vacuum chamber of empty coating machine is 15 ± 2mTorr;
(3) coating material is loaded in the cracking room of vacuum coaters, coating material is heated, reaches its temperature The cracking temperature of the coating material;
(4) valve of cracking room is opened, the coating material after step (3) processing is entered vacuum chamber, and be deposited on down Welding equipment circuit surface, in deposition process, the vacuum in vacuum chamber should control the temperature in 50 ± 2mTorr, vacuum chamber should For 30 ± 5 DEG C;When the vacuum in vacuum chamber is down to 15 ± 2mTorr, the valve of cracking room is closed;
(5) filling of epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realizes overcoat shading ring The purpose of oxygen tree fat.
Preferably, the coating material uses perfluoro Parylene, and coating material is added in the step (3) Heat, its temperature is set to reach 670 DEG C.
Preferably, before step (5) is performed, the coat thickness of the flip chip bonding circuit to completing coating through step (4) Tested, if after tested, the thickness difference of most thick coat and most scumbling coating is in ± 1 micrometer range, then it is assumed that apply Laminating lattice;Otherwise, the vacuum in vacuum chamber is adjusted, untill coat thickness difference meets to require.
The present invention has the advantages that compared with prior art:
(1) present invention is improved for traditional non-airtight flip chip bonding circuit humidity protective capacities deficiency, by right Flip chip bonding circuit carries out protective treatment, improves that circuit is moisture resistance, corrosion resistant ability;
(2) present invention to flip chip bonding circuit by carrying out protective treatment, under the die surface, upper surface of base plate, solder joint table Face increases thin film, can effectively improve the intensity of solder joint;
(3) present invention can improve the resistance to of non-airtight flip chip bonding circuit by carrying out protective treatment to flip chip bonding circuit Moist ability;
(4) present invention is applied to non-airtight flip-chip packaging processes.
Brief description of the drawings
Fig. 1 is the flow chart according to the method for the present invention;
Fig. 2 is the flip chip bonding packaging structure schematic diagram before the flip chip bonding humidity process for protecting for implementing the present invention;
Fig. 3 is to have implemented the encapsulating structure schematic diagram after flip chip bonding humidity process for protecting of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments to according to the present invention flip chip bonding humidity process for protecting method do into One step is described in detail.
Fig. 2 shows the state of the flip chip bonding packaging structure before implementing method of the invention, and this figure also illustrates existing Flip chip bonding packaging structure.As illustrated, after such a encapsulation process, the lower surface of chip 1, the surface of solder joint 3 and The upper surface of substrate 2 is filled with filling glue 4.If in the environment of high humidity, steam easily penetrates into inside from filling Jiao4Chu, draws Analyse of Flip Chip Solder Joint corrosion is played, finally influences circuit performance.The present invention is directed to such a flip chip bonding circuit humidity protective capacities not Foot is improved, and by carrying out protective treatment to flip chip bonding circuit, improves moisture resistance, the corrosion resistant ability of circuit.
Specifically, as shown in figure 1, the method according to the invention comprises the following steps:
(1) circuit after flip chip bonding is handled is dried;
(2) the flip chip bonding circuit after step (1) processing is put into vacuum coaters and carries out vacuumize process so that be true Vacuum in the vacuum chamber of empty coating machine is 15 ± 2mTorr;
(3) coating material is loaded in the cracking room of vacuum coaters, coating material is heated, reaches its temperature The cracking temperature of the coating material;
(4) valve of cracking room is opened, the coating material after step (3) processing is entered vacuum chamber, and be deposited on down Welding equipment circuit surface, in deposition process, the vacuum in vacuum chamber should control the temperature in 50 ± 2mTorr, vacuum chamber should For 30 ± 5 DEG C;When the vacuum in vacuum chamber is down to 15 ± 2mTorr, the valve of cracking room is closed;
(5) filling of epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realizes overcoat shading ring The purpose of oxygen tree fat.
The flip chip bonding humidity process for protecting method of the present invention, by by the circuit of the flip chip bonding packing forms shown in Fig. 2 Dried, then circuit is positioned in vacuum coaters, vacuumized, vacuum reaches 15 ± 2mTorr;By coating material Load in the cracking room of vacuum coaters, coating material is heated, its temperature is reached the cracking temperature of the coating material; The valve in cracking room is opened, coating material is entered vacuum chamber, the flip chip bonding circuit surface being deposited on rack, deposition During by the vacuum degree control in vacuum chamber in 50m ± 2Torr, temperature in vacuum chamber is 30 ± 5 DEG C;Work as vacuum When vacuum in chamber is down to 15 ± 2mTorr, the valve of cracking room is closed, completes coating.Finally, fallen to completing protection Welding equipment circuit carries out the filling of epoxy resin, realizes the purpose of overcoat isolation epoxy resin.Vacuum is controlled in deposition process Chamber temp helps to coat molecule deposition on object is applied at 30 ± 5 DEG C;The vacuum of vacuum chamber is controlled 15 During ± 2mTorr, the uniformity and compactness of coat are advantageously ensured that.
Encapsulating structure after the process processing of the present invention is as shown in Figure 3.Humidity flip chip bonding encapsulation after processing Structure includes the substrate 11 that chip 10 and the chip 10 connect.Wherein, the chip 10 includes upper surface, relative with upper surface Lower surface, it is arranged on the lower surface of chip 10, the solder joint 12 of the upper surface of substrate 11.The flip chip bonding packaging structure also includes being covered in core The protection film 14 of the lower surface of piece 10, the surface of solder joint 12 and the upper surface of substrate 11, film 14 isolate solder joint 12 and filling glue 13, should Filling glue uses epoxide resin material.
After process processing by the present invention, in the lower surface of chip, the upper surface of substrate and pad surface The thin polymer film of vapour deposition is just formd between epoxy resin, this film substantially increases the encapsulation of non-airtight flip chip bonding The humidity barrier propterty of structure, and improve Joint Strength.This technique is mainly used in non-airtight flip chip bonding circuit envelope Fill technique in, first according to circuit appearance and size carry out frock (frock can by those skilled in the art according to be actually needed into Row is corresponding to be set, and is not limited herein) design, it would be desirable to it is exposed outside to carry out the position of protective treatment, using can gas phase sink Long-pending polymer carries out surfacecti proteon, by control protective materials weight and initialization process middle chamber vacuum it is non-to realize Air-tightness flip chip bonding process for protecting.This process can ensure the integrality of non-airtight flip chip bonding circuit protection, and can obtain To the overcoat of excellent homogeneity.
Preferably, coating material uses perfluoro Parylene, corresponding in this, to coating material in the step (3) Heated, its heating-up temperature should reach 670 DEG C.
Preferably, can be before step (5) be performed, to being completed through step (4) according to the coat thickness being actually needed The coat thickness of the flip chip bonding circuit of coating is tested, if after tested, the thickness of most thick coat and most scumbling coating Difference is in ± 1 micrometer range, then it is assumed that coating is qualified, if thickness difference is more than ± 1 micron, can adjust in vacuum chamber Vacuum, until coat thickness difference meets to require.
Embodiment 1
Step (1), using 2060 type vacuum coaters, flip chip bonding circuit is dried first, is then loaded into 2060 types The vacuum chamber of vacuum coaters, is vacuumized, and its vacuum is reached 15mTorr;
Step (2), by perfluoro Parylene load 2060 type vacuum coaters cracking room in;Perfluoro is gathered Paraxylene is heated, and its temperature is reached 670 DEG C;The valve in cracking room is opened, makes perfluoro Parylene material Enter vacuum chamber by spreading conduit, the integrated circuit surface being deposited on rack, in deposition process, by vacuum chamber Vacuum degree control in 50 ± 2mTorr, temperature in vacuum chamber is 30 DEG C;
Step (3), when the vacuum in vacuum chamber is down to 15mTorr, close the valve of cracking room, complete coating Evaporation.
The flip chip bonding circuit coat thickness completed to coating is tested, and test equipment is DEKTAK6M type step instruments, It is 0.7 micron (i.e. difference of most thick film layers and most film layer) to measure insulating film layer thickness difference.Prove the painting after above-mentioned processing Coating thickness is qualified.
Step (4), the filling that epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realize overcoat Isolate the purpose of epoxy resin.
Moisture-proof test is carried out to the encapsulating structure after above-mentioned processing, method of testing measures down with reference to GJB548-2005 The welding equipment circuit moisture-proof time reaches 3000h, and circuit massless problem.
From above-described embodiment, method that the present invention uses vacuum covering, by surface under the die, pad surface with And upper surface of base plate coating protection film, epoxide resin material is refilled afterwards, ensure that the moisture resistance of the encapsulating structure after processing Wet effect.Coated film has good insulation, moisture-proof.The process of the present invention is applied to the non-airtight of different size Flip chip bonding circuit, therefore, can be in association area extensive use.
Here, it should be noted that the content not being described in detail in this specification, is that those skilled in the art pass through this theory What description and prior art in bright book can be realized, therefore, do not repeat.
The preferred embodiments of the present invention are the foregoing is only, are not used for limiting the scope of the invention.For ability For the technical staff in domain, on the premise of not paying creative work, some modification and replacement can be made to the present invention, All such modifications and replacement should be all included within the scope of the present invention.

Claims (3)

  1. A kind of 1. flip chip bonding humidity process for protecting method, it is characterised in that comprise the following steps:
    (1) circuit after flip chip bonding is handled is dried;
    (2) the flip chip bonding circuit after step (1) processing is put into vacuum coaters and carries out vacuumize process so that vacuum applies It is 15 ± 2mTorr to cover the vacuum in the vacuum chamber of machine;
    (3) coating material is loaded in the cracking room of vacuum coaters, coating material is heated, its temperature is reached the painting Cover the cracking temperature of material;
    (4) valve of cracking room is opened, the coating material after step (3) processing is entered vacuum chamber, and be deposited on flip chip bonding Circuit surface, in deposition process, the vacuum in vacuum chamber should control the temperature in 50 ± 2mTorr, vacuum chamber to should be 30 ±5℃;When the vacuum in vacuum chamber is down to 15 ± 2mTorr, the valve of cracking room is closed;
    (5) filling of epoxy resin is carried out to the flip chip bonding circuit after above-mentioned steps are handled, realizes that overcoat isolates asphalt mixtures modified by epoxy resin The purpose of fat;Humidity flip chip bonding packaging structure after processing includes the substrate that chip (10) and the chip (10) connect (11);Wherein, the chip (10) includes upper surface, the lower surface relative with upper surface, is arranged on chip (10) lower surface, substrate (11) solder joint (12) of upper surface;The flip chip bonding packaging structure also includes being covered in chip (10) lower surface, solder joint (12) surface With the protection film (14) of substrate (11) upper surface, film (14) isolation solder joint (12) and filling glue (13), the filling glue use Epoxide resin material.
  2. 2. flip chip bonding humidity process for protecting method as claimed in claim 1, it is characterised in that the coating material is using complete Fluoro-polypxylene, coating material is heated in the step (3), its temperature is reached 670 DEG C.
  3. 3. flip chip bonding humidity process for protecting method as claimed in claim 1, it is characterised in that before step (5) is performed, The coat thickness of flip chip bonding circuit that coating is completed through step (4) is tested, if after tested, most thick coat with most The thickness difference of scumbling coating is in ± 1 micrometer range, then it is assumed that coating is qualified;Otherwise, the vacuum in vacuum chamber is adjusted, Untill coat thickness difference meets to require.
CN201410827891.8A 2014-12-26 2014-12-26 A kind of flip chip bonding humidity process for protecting method Active CN104576414B (en)

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531858B (en) * 2016-12-30 2019-03-05 青岛杰生电气有限公司 Ultraviolet LED packaging method
CN110113892B (en) * 2019-06-04 2020-09-25 山东康威通信技术股份有限公司 Multilayer composite protective layer applied to PCB and method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348738B1 (en) * 1997-09-23 2002-02-19 International Business Machines Corporation Flip chip assembly
CN101603678A (en) * 2009-07-15 2009-12-16 中国科学院上海有机化学研究所 The waterproof sealing structure of LED module and preparation technology thereof
CN101894896A (en) * 2010-06-13 2010-11-24 东南大学 Glass ball cavity encapsulation method of light emitting diode
CN102044621A (en) * 2010-11-19 2011-05-04 东南大学 Wafer-level glass ball cavity package method for light emitting diode flip chip

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348738B1 (en) * 1997-09-23 2002-02-19 International Business Machines Corporation Flip chip assembly
CN101603678A (en) * 2009-07-15 2009-12-16 中国科学院上海有机化学研究所 The waterproof sealing structure of LED module and preparation technology thereof
CN101894896A (en) * 2010-06-13 2010-11-24 东南大学 Glass ball cavity encapsulation method of light emitting diode
CN102044621A (en) * 2010-11-19 2011-05-04 东南大学 Wafer-level glass ball cavity package method for light emitting diode flip chip

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