CN102637609A - Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane - Google Patents

Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane Download PDF

Info

Publication number
CN102637609A
CN102637609A CN2012101111233A CN201210111123A CN102637609A CN 102637609 A CN102637609 A CN 102637609A CN 2012101111233 A CN2012101111233 A CN 2012101111233A CN 201210111123 A CN201210111123 A CN 201210111123A CN 102637609 A CN102637609 A CN 102637609A
Authority
CN
China
Prior art keywords
wave circuit
millimetre
circuit assembly
vapor deposition
vacuum vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012101111233A
Other languages
Chinese (zh)
Inventor
敖辽辉
仝晓刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 10 Research Institute
Original Assignee
CETC 10 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 10 Research Institute filed Critical CETC 10 Research Institute
Priority to CN2012101111233A priority Critical patent/CN102637609A/en
Publication of CN102637609A publication Critical patent/CN102637609A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

The invention provides a method of protection treatment on a millimeter-wave circuit component by use of a vacuum vapor deposition membrane. Through the method, the corrosion resistance and long-term work reliability of the millimeter-wave circuit component can be obviously improved, the volume and weight can be greatly reduced, and the protection treatment method adopting metal shell leaktight encapsulation is not needed. The method comprises the following steps of: putting the millimeter-wave circuit component subjected to partial protection treatment into a vacuum oven for vacuum drying treatment under clean environment; placing the millimeter-wave circuit component on a tool rack of a room-temperature vacuum deposition chamber of a coating machine, and sealing and vacuumizing the chamber; heating p-xylene ring dimer at 175 DEG C to sublimate into a gaseous state, and feeding into a splitting cavity of the coating machine so that the molecular bond of the xylene ring dimer is broken at 680 DEG C and the xylene ring dimer is split into a p-xylene monomer with reactivity; and feeding the p-xylene monomer into the room-temperature vacuum deposition chamber so that the p-xylene monomer deposits on the surface of the millimeter-wave circuit component and is polymerized to form a parylene film protection layer.

Description

The millimetre-wave circuit assembly is carried out the method for protective treatment with the vacuum vapor deposition film
Technical field
The invention relates to millimetre-wave circuit assembly means of defence.
Background technology
Hyundai electronics equipment just towards weak point, little, light, thin and highly reliable, high-speed, high-performance and cheaply direction develop; Particularly airborne, carrier-borne and spaceborne electronics; And portable type electronic product is more and more harsher to the requirement of volume, weight and reliability; Requirement improves constantly the assembling and the interconnection density of microwave circuit, realizes microminiaturization, the lightweight and highly reliable of microwave circuit, and microwave components and little packaging technology thereof are had higher requirement; Therefore, the multi-chip module technology has obtained broad research and application.
The millimetre-wave circuit assembly of operating frequency about 35GHz comprises the millimeter wave multi-chip module, and multi-chip module has adopted a large amount of millimeter wave monolithic integrated circuits and application-specific integrated circuit (ASIC) bare chip.Multi-chip module is its important part; In order to guarantee the long-term reliability of these bare chips, adopt metal shell that the millimeter wave multi-chip module is encapsulated usually, through the method for level Hermetic Package; It is inner to prevent that moisture, oxygen and other environmental pollutions from getting into, and guarantees that circuit reliably and with long-term.Air-tight packaging is through certain mode, like energy storage welding, parallel seam welding, Laser Welding, add technologies such as heat-sealable (like solder, glass) and cold extrusion, will be used for the process that the opening of assembly seals.The protection of millimeter wave assembly is if adopt level Hermetic Package; The metal shell material need select for use the bigger material of oxygen-free copper, kovar alloy isodensity as seal; Cavity must adopt oxygen-free copper and corresponding encapsulating structure form; Structurally cause millimeter wave assembly volume and weight big on the one hand, roll up design, technology, production work and lead time on the other hand, even portioned product is in design; Do not take any safeguard procedures owing to the numerous and diverse of encapsulating structure, for product reliability is brought great risk.Secondly, adopt the millimeter wave assembly of level Hermetic Package protection, the socket of its connector must adopt gas-tight seal socket; The airtight intractability of the waveguide mouth on the metal shell is big, must be on the waveguide mouth glass for bonding window, cause whole assembly protection cost higher.
Therefore the level Hermetic Package complex technical process costs dearly, and can roll up the electronic product volume and weight simultaneously, and this has run counter to the miniaturization of current millimetre-wave circuit assembly, the developing direction of economy.
Sealing of seals such as employing organic gel; Though can pass through airtight test (test parameter is qualified); But it is the same with the Plastic Package circuit to be non-air-tight packaging, and ion, steam etc. can carry out scattering and permeating through the gap between interface, organic molecule, can cause component failures for a long time.Protective coatings such as the employed epoxy resin of circuit common assembly, polychlorostyrene fat, organic siliconresin, polyacrylate; Can be during coating curing because of the volatilization of solvent or micromolecule auxiliary agent; Produce shrinkage stress or form small pin hole; The dielectric strength of these conventional coatings generally also below 2000V/25um, therefore must could realize protecting more reliably with thicker coating through repeatedly applying; Dielectric constant and dielectric loss are sent and are drawn the synthetic fibre film high simultaneously, and these thicker coatings can cause the deterioration of the performance of millimetre-wave circuit assembly, can not be used for the protection of millimetre-wave circuit assembly.
Summary of the invention
The objective of the invention is to adopt the level Hermetic Package protection to cause assembly volume and weight to reach design, long problem of manufacturing cycle greatly to present millimetre-wave circuit assembly; A kind of metal shell level Hermetic Package that need not to adopt is provided; Can improve the bond strength of lead-in wire and solder joint; Guarantee the long-term operate as normal of bare chip, high reliability that still can holding circuit under salt mist test and other adverse circumstances, and can improve the method for the vacuum vapor deposition rete protective treatment of millimetre-wave circuit assembly resistance to corrosion and reliable long-term working property; To solve level Hermetic Package complex structural designs, the problem that cost is too high.
In order to realize above-mentioned purpose of the present invention, provided by the invention a kind of with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that comprising the following steps:
A) in clean environment,,, protect with protecting tool set-up, pressure sensitive adhesive tape or peelable glue like electric interface to the position that the millimetre-wave circuit assembly need not protect;
B) the millimetre-wave circuit assembly after the above-mentioned processing is put into vacuum drying oven and carry out vacuum drying treatment;
C) then the millimetre-wave circuit assembly after the dried is placed on the machine frame of coating machine room temperature vacuum moulding machine chamber, sealing is evacuated to below the 20mT;
D), be gaseous state at 175 ℃ of following heating sublimations with paraxylene cyclodimerization body; Send into xylenes cyclodimerization body gas the cracking chamber of coating machine again, make xylenes cyclodimerization body under 680 ℃ of temperature, molecular link breaks off and is cracked into the paraxylene monomer with reactivity; The paraxylene monomer is sent into room temperature vacuum deposition chamber, the paraxylene monomer is deposited and polymerization forms group and draws synthetic fibre film overcoat on the millimetre-wave circuit assembly surface.
The present invention has following beneficial effect than prior art:
The present invention adopts to send and draws synthetic fibre (Parylene) vacuum coating technology that the gasification of paraxylene dimer, Pintsch process are become diradical; Spontaneously on the millimetre-wave circuit component metadata device object carry out polymerization freely being diffused under vacuum and the room temperature condition; Be coated to different shape components and parts object surfaces; Can improve the bond strength of lead-in wire and solder joint; Eliminate moisture content, metal ion and other particle contamination on surface, very high performance/volume ratio has good isolating and protecting function to millimetre-wave circuit component metadata device object in adverse circumstances such as salt fog, mould, humidity, corrosivity.Transparent and rete as thin as a wafer still can the holding circuit plate under salt mist test and other adverse circumstances high reliability, and can not influence the function of resistance on the circuit board, thermocouple and other components and parts.Millimetre-wave circuit assembly after the processing can be through 10 days humid heat tests and salt mist test examination in 48 hours, and performance does not descend, and has improved the resistance to corrosion of millimetre-wave circuit assembly and the reliability of long-term work.The millimetre-wave circuit multi-chip module after synthetic fibre carries out protective treatment draws in group through vacuum vapor deposition, need not to adopt the metal shell level Hermetic Package, and metal shell can design and adopt the spiral shell assembling structure.Because spiral shell assembling structure metal shell material need not selected oxygen-free copper, material that the kovar alloy isodensity is bigger for use; Can select light materials such as aluminium alloy for use; Significantly reduce the weight of millimeter wave assembly; Realize the lightweight of assembly, thereby avoided the level Hermetic Package structure of complex design, can significantly reduce millimeter wave component design cycle and process-cycle; The gas-tight seal socket that also can adopt common socket to need for level Hermetic Package from generation to generation; Glass waveguide window on the cancellation metal shell, welding and the waveguide window and the socket welding of saving waveguide window and housing; Reduce multiple working procedures such as hermetic seal inspection simultaneously, significantly reduced the processing cost of millimetre-wave circuit assembly.
Protection processing method is easy; Protection cost in enormous quantities is low; Both improved the resistance to corrosion of millimetre-wave circuit assembly; Guaranteed the stable work in work of millimetre-wave circuit assembly again, prolonged working life, fundamentally solved part millimetre-wave circuit assembly because level Hermetic Package complex structural designs or the too high product reliability risk of not taking any safeguard procedures to cause of level Hermetic Package cost.
The process for protecting method that the present invention taked requires not quite the version of millimetre-wave circuit assembly, and the circuit unit that can put into the vacuum moulding machine chamber all can carry out protective treatment.
The Parylene coating that the present invention adopts is to be accomplished in the polymerization of printed circuit assembly surface deposition by the paraxylene biradical micromolecule gas of activity.The micromolecule porous of gaseous state deposits on comprising the base material that mounts any one fine gap below the part, forms the high straight polymer of molecular weight about 500,000.It does not have micromolecule such as auxiliary agent solvent; Can not form injury to millimetre-wave circuit assembly base material; The uniform overcoat of thickness combines with excellent performance, makes the Parylene coating only need 5 microns protection very reliably just can be provided the surface of printed circuit assembly, even through salt mist test; Surface insulation resistance does not have very about-face yet, and the heat dissipation that thin coating is produced when components and parts works is also highly beneficial.Because the molecular structure symmetry is better, make it under higher frequency, still have less dielectric loss and dielectric constant in addition, its this high-frequency low-consumption characteristic makes it create condition for the millimetre-wave circuit assembly comprises the reliable protection of high-frequency microwave circuit.Through the IC chip that Parylene applied, the thin diameter connecting line of its 25 microns microns, bonding strength can improve 5-10 doubly.Parylene can just not have pin hole fully when 0.2 micron thick; In the time of 5 microns with regard to the above dc breakdown voltage of ability 1000V, can antilysis, can be not dissolved in common solvent; Anti-freezing property strong (being low to moderate-200 ℃); Have unrivaled low gas permeability screen effect, good reliability has high dielectric strength.
Description of drawings
In order more to be expressly understood the present invention, will simultaneously with reference to accompanying drawing, the present invention be described through the embodiment of the invention at present, wherein:
What Fig. 1 showed is millimetre-wave circuit assembly protective treatment FB(flow block) of the present invention.
Fig. 2 shows that vacuum vapor deposition group draws the synthetic fibre procedure chart.
Embodiment
Consult Fig. 1.In millimetre-wave circuit assembly manufacturing process, after processing of millimetre-wave circuit assembly and performance adjustment completion, increase protective treatment process of the present invention more usually.1, protection electric interface; 2, vacuumize; 3, marginal testing; 4, assembly is shelved into coating machine; 5, the coating machine system vacuumizes; 6, the synthetic fibre rete draws in vapour deposition group; 7, remove protecting tool set-up and protection glue.Key step comprises:
A) in clean environment, need not protect position (electric interface) to what want protective treatment millimetre-wave circuit assembly, with protecting tool set-up, pressure sensitive adhesive tape or peelable glue protection;
B) adopt vacuum drying oven, the millimetre-wave circuit assembly that needs are applied carries out vacuum drying treatment;
C) in clean environment, whether have with 5 times of lens examination electric interface mask protections to meet the requirements, with on 40 power microscopes inspection IC chip or the device whether foreign matter being arranged;
D) the millimetre-wave circuit assembly is evenly placed on the coating machine machine frame;
E) close coating machine deposition chambers seal cover, be evacuated to below the 20mT;
F) on the equipment industrial computer, open the coating program, set base vacuum 25mT, deposition pressure 30mT, deposition finishes pressure 27mT, carries out vacuum vapor deposition group by the coating parameters unlatching coating machine of setting and draws the synthetic fibre rete to handle;
G) after coating is accomplished, in clean environment, remove protecting tool set-up, pressure sensitive adhesive tape or peelable glue.
Shown in Figure 2: synthetic fibre (Parylene) draws in the vacuum vapor deposition prepared group with unique, and at first under vacuum condition, paraxylene cyclodimerization body is heated distillation and is gaseous state under 175 ℃; Dimer gas gets into the cracking chamber, and under 680 ℃ of temperature, dimeric molecular link is disconnected, and is cracked into the paraxylene monomer with reactivity; The paraxylene monomer gets into the vacuum deposition chamber of room temperature; Deposition and polymerization on assembly surface; Form group and draw synthetic fibre film overcoat, go out the polymer thin membrane coat (being commonly referred to: conformal spreading, conformal coating, Conformal Coating) that applies shape fully on millimetre-wave circuit component metadata device different shape surface " growth " by active small molecular.The good penetration power of bioactive molecule can be at element internal, bottom, form the high-quality overcoat of no air gap on every side, comprises sharp-pointed seamed edge, in the crack and inner surface.The 0.1-100 micron film coating of this room temperature deposition preparation; Even, the fine and close free of pinholes of thickness, transparent unstressed, do not contain auxiliary agent, do not damage components and parts, excellent electrical insulating property and protective arranged; Good physical and mechanical properties is also arranged, and is a kind of tough and tensile, macromolecule coating material that self lubricity and good homogeneous property are arranged.Vacuum vapor deposition of the present invention is sent and is drawn synthetic fibre film, thicknesses of layers preferably to be controlled between 5 microns~15 microns.
According to the difference of molecular structure, Parylene can be divided into polytypes such as N type, C type, D type, HT type.It is to send to draw the synthetic fibre n type material that the most preferred embodiment of synthetic fibre protective materials draws in the group that the present invention adopts.Parylene N is a kind of good dielectric material, has low-down dielectric loss, high insulation resistance and not with the dielectric constant of frequency change.It is the highest a kind of of penetration capacity among all Paryleng.Parylene C is processed by identical monomer, just one of them aromatic hydrocarbon hydrogen atom has been replaced with a chlorine atom.Paryleng C is with good electrical properties, and physical property combines, and has hypotonicity for moist with other corrosive gas.Except providing real free of pinholes to cover the shape isolation, Paryleng C is the preferred material that applies important circuit board.Parylene D is processed by identical monomer, and just wherein two aromatic hydrocarbon hydrogen atoms are replaced by the chlorine atom.The character of Parylene D is similar with Parylene C, but has higher temperature capacity.This material of Parylene HT (SCS) has lower dielectric constant (being that wave penetrate capability is good), good stability and waterproof, mildew-resistant, anti-salt fog performance. and the short-term heatproof can reach 450 degrees centigrade; Long-term heatproof can reach 350 degrees centigrade; And have strong anti-uv-ray, be more suitable for protective materials as the high-frequency microwave device.

Claims (6)

  1. One kind with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that comprising the following steps:
    A) in clean environment,,, protect with protecting tool set-up, pressure sensitive adhesive tape or peelable glue like electric interface to the position that the millimetre-wave circuit assembly need not protect;
    B) the millimetre-wave circuit assembly after the above-mentioned processing is put into vacuum drying oven and carry out vacuum drying treatment;
    C) then the millimetre-wave circuit assembly after the dried is placed on the machine frame of coating machine room temperature vacuum moulding machine chamber, sealing is evacuated to below the 20mT;
    D), be gaseous state at 175 ℃ of following heating sublimations with paraxylene cyclodimerization body; Send into paraxylene cyclodimerization body gas the cracking chamber of coating machine again, make paraxylene cyclodimerization body under 680 ℃ of temperature, molecular link breaks off and is cracked into the paraxylene monomer with reactivity; The paraxylene monomer is sent into room temperature vacuum deposition chamber, the paraxylene monomer is deposited and polymerization forms group and draws synthetic fibre film overcoat on the millimetre-wave circuit assembly surface.
  2. 2. according to claim 1 with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that vacuum vapor deposition group draws synthetic fibre film, thicknesses of layers preferably to be controlled between 5 microns~15 microns.
  3. According to claim 1 described with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that it is wherein a kind of of N type, C type, D type, HT type that the synthetic fibre film draws in described group.
  4. According to claim 1 described with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that to draw the synthetic fibre protective materials be to send to draw the synthetic fibre n type material in group.
  5. According to claim 1 described with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that the equipment that is adopted is vacuum vapor deposition application system equipment.
  6. According to claim 1 described with the vacuum vapor deposition film to the method that the millimetre-wave circuit assembly carries out protective treatment, it is characterized in that the millimetre-wave circuit assembly of protection can comprise the millimeter wave multi-chip module.
CN2012101111233A 2012-04-16 2012-04-16 Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane Pending CN102637609A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012101111233A CN102637609A (en) 2012-04-16 2012-04-16 Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012101111233A CN102637609A (en) 2012-04-16 2012-04-16 Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane

Publications (1)

Publication Number Publication Date
CN102637609A true CN102637609A (en) 2012-08-15

Family

ID=46621962

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012101111233A Pending CN102637609A (en) 2012-04-16 2012-04-16 Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane

Country Status (1)

Country Link
CN (1) CN102637609A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103834918A (en) * 2012-11-21 2014-06-04 东莞劲胜精密组件股份有限公司 Preparation method of nano coating whole machine waterproof
CN105845442A (en) * 2015-10-28 2016-08-10 钰邦电子(无锡)有限公司 Solid electrolytic capacitor package structure and manufacturing method thereof
CN108424711A (en) * 2018-04-26 2018-08-21 东莞新劲电子有限公司 Electronic shelf label product increases protective coating technique
CN114325252A (en) * 2021-11-18 2022-04-12 北京卫星制造厂有限公司 Insulation protection method
CN114405791A (en) * 2022-01-28 2022-04-29 上海派拉纶生物技术股份有限公司 Protective coating for sensitive element of sensor
CN114574094A (en) * 2022-03-03 2022-06-03 上海派拉纶生物技术股份有限公司 High-reliability integrated circuit protective coating
CN114806328A (en) * 2022-03-28 2022-07-29 武汉华工正源光子技术有限公司 Protective coating for optical module and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1299708A (en) * 2001-01-22 2001-06-20 孙泉 Pre-cleaning process of Nd-Fe-B permanent magnet surface to be coated with anticorrosive p-xylene polymer layer
CN1256186C (en) * 2001-04-05 2006-05-17 霍尼韦尔国际公司 Method for depositing barrier coating on polymeric substrate and composition comprising said barrier coating
US7193226B2 (en) * 2003-09-30 2007-03-20 Agfa-Gevaert Scratch resistant moisture-protecting parylene layers
CN201082900Y (en) * 2007-09-28 2008-07-09 天津理工大学 Multifunctional film forming system for packaging organic electroluminescence component
CN101603678A (en) * 2009-07-15 2009-12-16 中国科学院上海有机化学研究所 The waterproof sealing structure of LED module and preparation technology thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1299708A (en) * 2001-01-22 2001-06-20 孙泉 Pre-cleaning process of Nd-Fe-B permanent magnet surface to be coated with anticorrosive p-xylene polymer layer
CN1256186C (en) * 2001-04-05 2006-05-17 霍尼韦尔国际公司 Method for depositing barrier coating on polymeric substrate and composition comprising said barrier coating
US7193226B2 (en) * 2003-09-30 2007-03-20 Agfa-Gevaert Scratch resistant moisture-protecting parylene layers
CN201082900Y (en) * 2007-09-28 2008-07-09 天津理工大学 Multifunctional film forming system for packaging organic electroluminescence component
CN101603678A (en) * 2009-07-15 2009-12-16 中国科学院上海有机化学研究所 The waterproof sealing structure of LED module and preparation technology thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103834918A (en) * 2012-11-21 2014-06-04 东莞劲胜精密组件股份有限公司 Preparation method of nano coating whole machine waterproof
CN103834918B (en) * 2012-11-21 2016-08-03 东莞劲胜精密组件股份有限公司 The waterproof preparation method of nano coating complete machine
CN105845442A (en) * 2015-10-28 2016-08-10 钰邦电子(无锡)有限公司 Solid electrolytic capacitor package structure and manufacturing method thereof
CN108424711A (en) * 2018-04-26 2018-08-21 东莞新劲电子有限公司 Electronic shelf label product increases protective coating technique
CN114325252A (en) * 2021-11-18 2022-04-12 北京卫星制造厂有限公司 Insulation protection method
CN114405791A (en) * 2022-01-28 2022-04-29 上海派拉纶生物技术股份有限公司 Protective coating for sensitive element of sensor
CN114574094A (en) * 2022-03-03 2022-06-03 上海派拉纶生物技术股份有限公司 High-reliability integrated circuit protective coating
CN114574094B (en) * 2022-03-03 2023-03-03 上海派拉纶生物技术股份有限公司 High-reliability integrated circuit protective coating
CN114806328A (en) * 2022-03-28 2022-07-29 武汉华工正源光子技术有限公司 Protective coating for optical module and preparation method thereof
CN114806328B (en) * 2022-03-28 2023-03-10 武汉华工正源光子技术有限公司 Protective coating for optical module and preparation method thereof

Similar Documents

Publication Publication Date Title
CN102637609A (en) Method of protection treatment on millimeter-wave circuit component by use of vacuum vapor deposition membrane
Cheacharoen et al. Design and understanding of encapsulated perovskite solar cells to withstand temperature cycling
Ho et al. Polymer capacitor dielectrics for high temperature applications
US8969132B2 (en) Device package and methods for the fabrication thereof
US9786441B2 (en) Solid electrolytic capacitor package structure and method of manufacturing the same
US20150001700A1 (en) Power Modules with Parylene Coating
US10361036B2 (en) Capacitor package structure
KR20160023601A (en) hybrid thin film having liquid layer, flexible device comprising thereof and manufacturing method of the same
TWI433616B (en) Circuit board and method for manufacturing the same
KR20190040964A (en) Solar cell module
JP6525327B2 (en) Power semiconductor module and method of manufacturing the same
CN106442131B (en) Piezoelectric semiconductor's multi- scenarios method fracture failure experiment research
CN110061150A (en) Organic LED display device and preparation method thereof
Kumar et al. New high temperature polymer thin coating for power electronics
Ahmad et al. Encapsulation protocol for flexible perovskite solar cells enabling stability in accelerated aging tests
US20190198253A1 (en) Capacitor package structure with functional coating and method for manufacturing the same
US11272624B2 (en) Coated articles that demonstrate push-through electrical connectivity
CN111058071A (en) Method for improving interfacial heat conduction between inorganic metal material and high molecular polymer
CN104576414B (en) A kind of flip chip bonding humidity process for protecting method
Aung et al. Enhanced Thermal Stability of Low‐Temperature Processed Carbon‐Based Perovskite Solar Cells by a Combined Antisolvent/Polymer Deposition Method
CN104112676B (en) SIP lead-tin packaging method and packaging structure thereof
Shores Thermoplastic films for adhesive bonding: hybrid microcircuit substrates
TW201017693A (en) Insulating paste for low temperature curing application
Wu et al. Investigation on reliability and failure analysis of plastic encapsulated microelectronics
Naganawa et al. P‐92: Encapsulation Adhesive Possessing High Water Barrier and Low Corrosive Properties for Flexible Electronic Device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120815