CN103855259B - LED encapsulation method - Google Patents

LED encapsulation method Download PDF

Info

Publication number
CN103855259B
CN103855259B CN201410038645.4A CN201410038645A CN103855259B CN 103855259 B CN103855259 B CN 103855259B CN 201410038645 A CN201410038645 A CN 201410038645A CN 103855259 B CN103855259 B CN 103855259B
Authority
CN
China
Prior art keywords
fluorescent glue
depression
chip
crystal chip
overlay crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410038645.4A
Other languages
Chinese (zh)
Other versions
CN103855259A (en
Inventor
裴小明
曹宇星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Refond Optoelectronics Co Ltd
Original Assignee
SHANGHAI RUIFENG OPTOELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHANGHAI RUIFENG OPTOELECTRONICS Co Ltd filed Critical SHANGHAI RUIFENG OPTOELECTRONICS Co Ltd
Priority to CN201410038645.4A priority Critical patent/CN103855259B/en
Publication of CN103855259A publication Critical patent/CN103855259A/en
Application granted granted Critical
Publication of CN103855259B publication Critical patent/CN103855259B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention is applied to LED and manufactures field there is provided a kind of LED encapsulation method, including:Make transparent enclosure film or transparent glass sheet with array depression;Fluorescent glue is filled into depression, the fluorescent glue amount of each depression filling is depression volume and the difference of the volume of overlay crystal chip to be packaged;Overlay crystal chip is fixed in fluorescent glue, makes the bottom electrode of overlay crystal chip exposed, array-type LED case chip is formed;Array-type LED case chip is divided into multiple LED encapsulation monomers.The present invention is packaged on transparent enclosure film or transparent glass sheet to overlay crystal chip, and packaging body is only made up of overlay crystal chip, fluorescent glue, transparent enclosure glue, and reliability is high, saving material, cost, low, production capacity is high;Without the limitation of support shape, encapsulated beneficial to large-scale integrated;Fluorescent glue need not be separated, processing procedure has been saved;Scattering-in equal loss of the photon between fluorescent material can be reduced, beneficial to lifting product brightness;Chip both positive and negative polarity is cost-effective without gold-plated tin alloy layers.

Description

LED encapsulation method
Technical field
The present invention relates to LED product manufacturing technology field, more particularly to a kind of LED encapsulation method.
Background technology
The packaged type of conventional white light LED product is to consolidate LED wafer by way of die bond glue sticking or eutectic welding It is scheduled in the bowl on support, the positive pole of chip is connected to the positive pole of support using gold thread, the negative pole of chip is connected to branch The negative pole of frame, then filling meets the fluorescent glue in aim colour area into bowl.Due to support, fluorescent glue, the glue for being bonded chip The thermal coefficient of expansion of body is different, easily integrity problem occurs in terms of support, fluorescent glue, gold thread, colloid;And LED support Species is various, and the material of bonding chip and support both positive and negative polarity is generally PPA, PCT and EMC materials, its heat-resisting quantity, air-tightness has Larger defect, and then influence the reliability of LED product.Although ceramics bracket has preferable heat-resisting quantity and preferably airtight Property, but support cost takes costliness close to chip cost, and ceramics bracket encapsulation LED systems, and equipment investment is big, causes ceramics bracket LED product production capacity is small, and price is high.Therefore, the LED product of support encapsulated structure is in reliability, service life, manufacturing cost and valency Defect in terms of lattice is the larger obstruction that LED product substitutes traditional lighting products.
The content of the invention
It is an object of the invention to provide a kind of LED encapsulation method, it is intended to improves the reliability of LED product, it is ensured that its compared with Long service life, while reducing cost, improves production capacity.
The present invention is achieved in that LED encapsulation method, comprises the steps:
Make the transparent enclosure film for the depression arranged with array;
Fluorescent glue is filled into the depression and forms independent fluorescent adhesive layer to omit the process for separating the fluorescent glue, often The fluorescent glue amount of individual depression filling for depression volume and overlay crystal chip to be packaged volume difference;
The overlay crystal chip is fixed in the fluorescent glue, and makes the bottom electrode of the overlay crystal chip exposed, other Face is immersed in the fluorescent glue, forms full wafer array-type LED case chip;
The array-type LED case chip is divided into multiple LED encapsulation monomers, wherein, each LED encapsulation monomer bag An overlay crystal chip is included, the fluorescent glue is coated with the periphery of the overlay crystal chip, in being externally provided with for the fluorescent glue The transparent enclosure film, the transparent enclosure film is surrounded on above the fluorescent glue and side entirely.
It is of the invention with conventionally employed support encapsulate method compared with, have the following advantages that:
Firstth, the LED encapsulation monomers that this method makes only are made up of overlay crystal chip 2, fluorescent glue 3, transparent enclosure glue 1, are saved The materials such as support, gold thread, and overlay crystal chip 2, fluorescent glue 3 and the equal stabilizer pole of the performance of transparent enclosure glue 1 are removed, reliability is far above branch The encapsulation mode of frame and gold thread, and then avoid because product reliability is asked caused by support is different with the thermal coefficient of expansion of colloid Topic, it is ensured that the service life of its overlength, and great amount of cost can be saved, improve production capacity;
Secondth, it is easy to operate without separately setting encapsulation work platform using transparent enclosure glue or clear glass as operation base material; Depression 11 is directly opened up on transparent enclosure glue 1 or lucite, fluorescent glue 3 is filled into depression 11, directly forms independent Fluorescent adhesive layer, with being coated above chip compared with fluorescent glue carries out separating the mode of fluorescent glue again, eliminate separation fluorescent glue Process, significantly simplify manufacturing process;
3rd, encapsulation process is carried out directly on transparent enclosure film or clear glass, easy to operate, with using point gum machine to Method for dispensing glue is compared one by one in bowl, and utilization of materials is high, reduces packaging cost;
4th, the limitation without support shape, encapsulation process is simpler, is encapsulated beneficial to the large-scale integrated of LED product, profit Reduced in the cost of packaging;
5th, due to not using bowl to encapsulate, scattering-in equal loss of the photon between fluorescent material is substantially reduce the number, is beneficial to Lift the brightness of product;
6th, due to not using rack bearing chip, overlay crystal chip bottom both positive and negative polarity is without (3 μm expensive of certain thickness Left and right) gold-tin alloy layer (conventional method need bottom of wafer set gold-tin alloy layer be welded on support), significantly save Cost.
Brief description of the drawings
Fig. 1 is the LED encapsulation method flow chart that first embodiment of the invention is provided;
Fig. 2 a are the encapsulating structure schematic diagrames (one) corresponding with LED encapsulation method;
Fig. 2 b are the encapsulating structure schematic diagrames (two) corresponding with LED encapsulation method;
Fig. 2 c are the encapsulating structure schematic diagrames (three) corresponding with LED encapsulation method;
Fig. 2 d are the encapsulating structure schematic diagrames (four) corresponding with LED encapsulation method;
Fig. 2 e are the encapsulating structure schematic diagrames (five) corresponding with LED encapsulation method;
Fig. 2 f are the enlarged drawings of a-quadrant in Fig. 2 e;
Fig. 2 g are the encapsulating structure schematic diagrames (six) corresponding with LED encapsulation method;
Fig. 2 h are the encapsulating structure schematic diagrames (seven) corresponding with LED encapsulation method;
Fig. 2 i are the encapsulating structure schematic diagrames (eight) corresponding with LED encapsulation method;
Fig. 2 j are the structural representations (one) that the LED obtained by LED encapsulation method encapsulates monomer;
Fig. 2 k are the structural representations (two) that the LED obtained by LED encapsulation method encapsulates monomer.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and It is not used in the restriction present invention.
Fig. 1 shows the flow chart of LED encapsulation method provided in an embodiment of the present invention, and Fig. 2 a~2i is shown and this method Corresponding product encapsulating structure figure, for convenience of description, illustrate only part related to the present embodiment.
With reference to Fig. 1, LED encapsulation method provided in an embodiment of the present invention comprises the steps:
Step S101, makes the transparent enclosure film 1 or transparent glass sheet for the depression 11 arranged with array;
In the present embodiment, the transparent enclosure film 1 or transparent glass sheet are encapsulated as the outermost layer of encapsulation LED wafer ties Structure, depression 11 is then used to fill fluorescent glue and places LED overlay crystal chips 2, and the shape of depression 11 is kissed with the shape of overlay crystal chip 2 Close, the back side of the transparent enclosure film 1 or transparent glass sheet is burnishing surface or lens array, wherein lens 12 with depression 11 one by one Correspondence, such as Fig. 2 a and 2b.
Step S102, fluorescent glue is filled into depression, and the fluorescent glue amount of each depression filling is sealed for the volume of depression with waiting The difference of the volume of the overlay crystal chip of dress;Such as Fig. 2 c and 2d;
Step S103, overlay crystal chip is fixed in fluorescent glue, and makes the bottom electrode of overlay crystal chip exposed, the leaching of other faces Enter in the fluorescent glue, form full wafer array-type LED case chip;Such as Fig. 2 e, 2f, 2g;
By the accurate control to fluorescent glue amount, the bottom electrode 21 of overlay crystal chip 2 can be made exposed, other five surfaces are equal Immerse in fluorescent glue 3.Furthermore it is possible to rationally set the depth of depression 11, make the thickness of the fluorescent glue 3 directly over overlay crystal chip 2 For 30~500 μm.
Step S104, is divided into multiple LED to encapsulate monomer array-type LED case chip;Such as Fig. 2 h and Fig. 2 i.
By step S101~S104, the LED encapsulation monomers shown in Fig. 2 j or Fig. 2 k can be obtained, each LED encapsulates monomer Including an overlay crystal chip 2, fluorescent glue 3 is coated with the periphery of the overlay crystal chip 2, transparent enclosure is externally provided with fluorescent glue 3 Glue 1, the bottom electrode 21 of overlay crystal chip 2 is exposed, for the electrode welding with application end.
Further, anti-welding glue can also be filled between the positive and negative electrode of the bottom of overlay crystal chip 2, to prevent application end from welding Electric pole short circuit when connecing.
It is of the invention with conventionally employed support encapsulate method compared with, have the following advantages that:
Firstth, the LED encapsulation monomers that this method makes only are made up of overlay crystal chip 2, fluorescent glue 3, transparent enclosure glue 1, are saved The materials such as support, gold thread, and overlay crystal chip 2, fluorescent glue 3 and the equal stabilizer pole of the performance of transparent enclosure glue 1 are removed, reliability is far above branch The encapsulation mode of frame and gold thread, and then avoid because product reliability is asked caused by support is different with the thermal coefficient of expansion of colloid Topic, it is ensured that the service life of its overlength, and great amount of cost can be saved, improve production capacity;
Secondth, it is easy to operate without separately setting encapsulation work platform using transparent enclosure glue or clear glass as operation base material; Depression 11 is directly opened up on transparent enclosure glue 1 or clear glass, fluorescent glue 3 is filled into depression 11, directly forms independent Fluorescent adhesive layer, with being coated above chip compared with fluorescent glue carries out separating the mode of fluorescent glue again, eliminate separation fluorescent glue Process, significantly simplify manufacturing process;
3rd, encapsulation process is carried out directly on transparent enclosure film or clear glass, easy to operate, with using point gum machine to Method for dispensing glue is compared one by one in bowl, and utilization of materials is high, reduces packaging cost;
4th, the limitation without support shape, encapsulation process is simpler, is encapsulated beneficial to the large-scale integrated of LED product, profit Reduced in the cost of packaging;
5th, due to not using bowl to encapsulate, scattering-in equal loss of the photon between fluorescent material is substantially reduce the number, is beneficial to Lift the brightness of product;
6th, due to not using rack bearing chip, overlay crystal chip bottom both positive and negative polarity is without (3 μm expensive of certain thickness Left and right) gold-tin alloy layer (conventional method need bottom of wafer set gold-tin alloy layer be welded on support), significantly save Cost.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.

Claims (5)

  1. The method for packing of 1.LED chips, it is characterised in that comprise the steps:
    Make the transparent enclosure film for the depression arranged with array;
    Fluorescent glue is filled into the depression and directly forms independent fluorescent adhesive layer to omit the process for separating the fluorescent glue, often The fluorescent glue amount of individual depression filling for depression volume and overlay crystal chip to be packaged volume difference;
    The overlay crystal chip is fixed in the fluorescent glue, and makes the bottom electrode of the overlay crystal chip exposed, the leaching of other faces Enter in the fluorescent glue, form full wafer array-type LED case chip;
    The array-type LED case chip is divided into multiple LED encapsulation monomers, wherein, each LED encapsulation monomer includes one The individual overlay crystal chip, the fluorescent glue is coated with the periphery of the overlay crystal chip, described in being externally provided with for the fluorescent glue Transparent enclosure film, the transparent enclosure film is surrounded on above the fluorescent glue and side entirely.
  2. 2. method for packing as claimed in claim 1, it is characterised in that the shape of the depression and the shape of the overlay crystal chip It coincide.
  3. 3. method for packing as claimed in claim 1, it is characterised in that the back side of the transparent enclosure film is burnishing surface.
  4. 4. method for packing as claimed in claim 1, it is characterised in that the transparent enclosure film back side is lens array, its In, each lens are corresponded with depression.
  5. 5. method for packing as claimed in claim 1, it is characterised in that the thickness of the fluorescent glue directly over the overlay crystal chip is 30~500 μm.
CN201410038645.4A 2014-01-26 2014-01-26 LED encapsulation method Active CN103855259B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410038645.4A CN103855259B (en) 2014-01-26 2014-01-26 LED encapsulation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410038645.4A CN103855259B (en) 2014-01-26 2014-01-26 LED encapsulation method

Publications (2)

Publication Number Publication Date
CN103855259A CN103855259A (en) 2014-06-11
CN103855259B true CN103855259B (en) 2017-09-08

Family

ID=50862669

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410038645.4A Active CN103855259B (en) 2014-01-26 2014-01-26 LED encapsulation method

Country Status (1)

Country Link
CN (1) CN103855259B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015109580A1 (en) * 2014-01-26 2015-07-30 上海瑞丰光电子有限公司 Led encapsulation method
CN105870292B (en) * 2015-01-22 2018-11-13 深圳市斯迈得半导体有限公司 A kind of high leakproofness LED support
CN104900784B (en) * 2015-05-22 2017-12-05 厦门多彩光电子科技有限公司 The manufacture method of LED encapsulation structure
CN104900785A (en) * 2015-05-22 2015-09-09 厦门多彩光电子科技有限公司 Led packaging structure and manufacturing method thereof
CN106299079A (en) * 2015-06-24 2017-01-04 严敏 The method for packing of a kind of composite LED glass base plane and panel
CN106299039B (en) * 2015-06-24 2018-12-21 程君 A kind of packaging process and panel of composite LED glass base plane
CN105161598B (en) * 2015-07-27 2019-01-01 鸿利智汇集团股份有限公司 A kind of CSP encapsulating structure and manufacturing process based on moulding
CN105609622A (en) * 2016-03-22 2016-05-25 武汉优炜星科技有限公司 Ultraviolet LED packaging structure and packaging method therefor
CN106356438A (en) * 2016-11-30 2017-01-25 东莞市良友五金制品有限公司 LED (light emitting diode) support frame eutectic crystal encapsulation method
CN117133851A (en) * 2023-10-26 2023-11-28 罗化芯显示科技开发(江苏)有限公司 LED packaging diaphragm and LED packaging structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101652868A (en) * 2006-12-22 2010-02-17 皇家飞利浦电子股份有限公司 Light emitting device including a filter
CN102569563A (en) * 2012-01-20 2012-07-11 吕思远 Wafer level packaging method of light emitting diode with adjustable lens focus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2899999B2 (en) * 1991-05-15 1999-06-02 タキロン株式会社 Light emitting display plate and method of manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101652868A (en) * 2006-12-22 2010-02-17 皇家飞利浦电子股份有限公司 Light emitting device including a filter
CN102569563A (en) * 2012-01-20 2012-07-11 吕思远 Wafer level packaging method of light emitting diode with adjustable lens focus

Also Published As

Publication number Publication date
CN103855259A (en) 2014-06-11

Similar Documents

Publication Publication Date Title
CN103855259B (en) LED encapsulation method
CN103872212B (en) LED (light-emitting diode) packaging method
CN105185717A (en) Wafer level chip encapsulation method
TW201526123A (en) Semiconductor package structure and manufacturing method thereof
CN104134741A (en) Packaging method for LED (Light-Emitting Diode) display screen module
CN101982892A (en) Packaging structure and method of high-power LED
CN203746898U (en) LED packaging body and illumination equipment
CN105529308B (en) A kind of cushion block adds the fingerprint chip-packaging structure and manufacturing method of underfill
CN103972360A (en) Method for packaging LED chips
CN103855278A (en) LED packaging structure and illumination equipment
CN105405777B (en) A kind of extensive parallel stack type encapsulation structure and packaging method
CN103855283B (en) LED packaging body and illumination device
CN103855279A (en) LED packaging method
CN204361107U (en) Photosensor package structure
CN110112163A (en) A kind of image sensor package structure and packaging method
CN203746899U (en) LED packaging structure and illumination equipment
CN103855284B (en) LED wafer packaging method
CN106373935B (en) A kind of island-free framework encapsulation technique and its encapsulating structure
CN107331737A (en) A kind of LED method for packing
TWI359481B (en) Sensor semiconductor package and method thereof
CN106601899A (en) Packaging technique of LED display screen module
CN206907379U (en) LED display modules and display screen
CN205303419U (en) Parallel storehouse formula packaging structure of large tracts of land
CN202616221U (en) Leadless plastic flat encapsulation with cavity
CN110634856A (en) Flip-chip and wire bonding hybrid packaging structure and packaging method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210118

Address after: 518000, 6th floor, building 1, Tianliao community, Gongming office, Guangming New District, Shenzhen City, Guangdong Province

Patentee after: Shenzhen Refond Optoelectronics Co.,Ltd.

Address before: 201306 room 8650, building 1, 1758, Luchaogang Road, Luchaogang Town, Pudong New Area, Shanghai

Patentee before: SHANGHAI RUIFENG OPTOELECTRONICS Co.,Ltd.