CN101982892A - Packaging structure and method of high-power LED - Google Patents
Packaging structure and method of high-power LED Download PDFInfo
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- CN101982892A CN101982892A CN2010102563582A CN201010256358A CN101982892A CN 101982892 A CN101982892 A CN 101982892A CN 2010102563582 A CN2010102563582 A CN 2010102563582A CN 201010256358 A CN201010256358 A CN 201010256358A CN 101982892 A CN101982892 A CN 101982892A
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Abstract
The embodiment of the invention relates to a packaging structure of high-power LED, comprising a substrate, an LED chip fixed at one side of the substrate, a first transparent adhesive layer formed by pressure injection with the LED chip as the center, a fluorescent adhesive layer formed by pressure injection outside the first transparent adhesive layer and a second transparent adhesive layer formed by pressure injection outside the fluorescent adhesive layer. The embodiment of the invention also provides a packaging method of the high-power LED. The invention has the following beneficial effects: in the method, the fluorescent adhesive layer is formed by a specific die through pressure injection and has uniform thickness; the uniformity and consistency of the color temperature of the light space can be well realized by controlling the shape and thickness of the fluorescent adhesive layer and the fluorescent powder inside the fluorescent adhesive layer to be uniformly distributed; and the first transparent adhesive layer is arranged between the fluorescent adhesive layer and the LED chip and the substrate through pressure injection, thus overcoming the defects of low product reliability and greater light attenuation caused by direct contact between the fluorescent powder and the LED chip with high heat productivity and the substrate.
Description
Technical field
The present invention relates to the LED encapsulation technology, relate in particular to a kind of high-power LED encapsulation structure and method for packing.
Background technology
Traditional large power white light LED packaged type is with elargol led chip to be fixed on the support or substrate that has recessed cup, will be furnished with the glue of fluorescent material then and click and enter in the recessed cup, and the layer of transparent of reinjecting glue is through the baking aftershaping.There is following shortcoming at least in this kind method for packing: 1, owing to the glue of being furnished with fluorescent material is directly put around the chip, the variable thickness of fluorescent glue causes and the fluorescent material skewness can cause each surperficial amount of light of chip different, can finally cause the space colour temperature of whole light source inconsistent.2, can precipitate owing to fluorescent material, so have layer of fluorescent powder with the surface that recessed cup contacts at colloid, can reduce the adhesion between colloid and support or the substrate like this, when LED lights for a long time, layering can occur between colloid and support or the substrate, reduce reliability of products; 3, fluorescent material is direct contacts with the high chip of caloric value, also can reduce reliability of products, and light decay is relatively large.
Summary of the invention
Embodiment of the invention technical problem to be solved is, a kind of high-power LED encapsulation structure and method for packing are provided, and to realize light source space colour temperature uniformity, light decay is less, and reliability is higher.
For solving the problems of the technologies described above, the embodiment of the invention adopts following technical scheme: a kind of high-power LED encapsulation structure comprises: substrate; Be fixed on the led chip of described substrate one side; Is that the center pressure injection forms, refractive index greater than 1.41 first substratum transparent at the substrate surface that is fixed with described led chip one side with described led chip; Pressure injection forms outside described first substratum transparent, refractive index is less than or equal to the fluorescence glue-line of described first substratum transparent; Described fluorescence glue-line external pressure annotate form, refractive index is less than or equal to second substratum transparent of described fluorescence glue-line.
A kind of high-power LED packaging method comprises the steps: led chip is fixed to substrate one side; Is that the center pressure injection forms first substratum transparent at the substrate surface that is fixed with described led chip one side with described led chip; Pressure injection forms the fluorescence glue-line outside described first substratum transparent; Annotate formation second substratum transparent at described fluorescence glue-line external pressure.
The beneficial effect of the embodiment of the invention is: 1, the fluorescence glue-line is by specific mould injection-compression molding in the encapsulating structure of the embodiment of the invention, its thickness is even, can realize light source space colour temperature uniformity consistency preferably by the shape of control fluorescence glue-line and the even distribution of fluorescent material of thickness and inside.
2, the LED encapsulating structure of the embodiment of the invention is formed with first substratum transparent between fluorescence glue-line and led chip and substrate, this first substratum transparent can prevent that the fluorescent material of fluorescence glue-line is deposited in the contact surface of colloid and substrate, thereby improves the adhesion between colloid and the substrate; First substratum transparent can prevent that fluorescent material from directly contacting with the high led chip of caloric value, improves reliability of products, reduces light decay.
Description of drawings
Fig. 1 is the schematic diagram of high-power LED encapsulation structure first embodiment of the present invention; Fig. 2 is the schematic diagram of high-power LED encapsulation structure second embodiment of the present invention; Fig. 3 is the flow chart of high-power LED packaging method of the present invention.
Embodiment
Below in conjunction with accompanying drawing the embodiment of the invention is described in further detail.
Fig. 1 and Fig. 2 are the schematic diagram of two embodiment of high-power LED encapsulation structure of the present invention.The high-power LED encapsulation structure that the embodiment of the invention provided comprises: substrate 1, led chip 2, first substratum transparent 3, fluorescence glue-line 4 and second substratum transparent 5.
Wherein led chip 2 is fixed on a side of substrate 1; First substratum transparent 3 is for being the layer of transparent colloid that the center pressure injection forms with led chip 2, and this first substratum transparent 3 adopts the silica gel injection-compression molding in the present embodiment, and the refractive index of first substratum transparent 3 is greater than 1.41, and hardness is greater than shore A 50; Fluorescence glue-line 4 adopts the liquid glue injection-compression molding of being furnished with fluorescent material, the shape of fluorescence glue-line 4 is identical with first substratum transparent, 3 shapes, fluorescence glue-line 4 thickness are even, its inner fluorescent material is evenly distributed, first substratum transparent 3 is the hemisphere shape among first embodiment as shown in Figure 1, pressure injection forms the transparent silicon glue-line that fluorescence glue-line 4, the second substratum transparents 5 of the very thin hemisphere shape of one deck are the hemisphere shape of pressure injection formation outside fluorescence glue-line 4 outside first substratum transparent 3 of hemisphere shape.The refractive index of first substratum transparent 3, fluorescence glue-line 4, second substratum transparent 5 equates or reduces successively that the hardness and the thermal coefficient of expansion of each glue-line mate mutually.
Among second embodiment shown in Figure 2, first substratum transparent 3 is the square shape, pressure injection forms the transparent silicon glue-line that fluorescence glue-line 4, the second substratum transparents 5 of the very thin square shape of one deck are the hemisphere shape of pressure injection formation outside fluorescence glue-line 4 outside first substratum transparent 3 of square shape.LED encapsulating structure among above-mentioned Fig. 1 and Fig. 2 is two groups of preferred embodiments of the present invention, the shape of first substratum transparent 3, fluorescence glue-line 4 and second substratum transparent 5 not only is limited to the shape among above-mentioned two groups of embodiment in the specific implementation, and that also can pass through other shapes of employing and thickness realizes light source space colour temperature uniformity consistency with glue-line.
Figure 3 shows that the flow chart of high-power LED packaging method in an embodiment of the present invention, adopt metal substrate or ceramic substrate in the present embodiment, concrete technological process is as follows: step 101: fixed L ED chip 2; During concrete operations, led chip 2 is fixed on the side of substrate 1, connects led chip 2 and substrate 1 with gold thread then, carry out preheating to being fixed with basic 1 of led chip 2 again with elargol or eutectic material; Step 102: pressure injection first substratum transparent 3; During concrete operations, the substrate 1 that preheating finishes is put into first mold, the inner chamber of first mold is to be the hemisphere shape that concaves of center or the cavity of square shape with led chip 2, with liquid-transparent colloid pressure injection in first mold, first substratum transparent 3 that baking forms hemisphere shape or square shape carries out the demoulding again, and the refractive index of first substratum transparent 3 is greater than 1.41, hardness is greater than shore A 50, and light transmittance is greater than 90%; Step 103: pressure injection fluorescence glue-line 4; During concrete operations, the semi-finished product of the demoulding first time are put into second mold, the cavity shape of second mold is identical with the shape of the first mold inner chamber, the inner cavity size of second mold is greater than the inner cavity size of first mold, the liquid glue pressure injection that to be furnished with fluorescent material is to being fixed with in above-mentioned half-finished second mold, and baking forms fluorescence glue-line 4, carries out the demoulding again, the refractive index of fluorescence glue-line 4 is less than or equal to the refractive index of ground floor colloid, and light transmittance is greater than 90%; Step 104: pressure injection second substratum transparent 5; During concrete operations, the semi-finished product that the demoulding second time produces are put in the 3rd mold, the inner chamber of the 3rd mold is to be the cavity of the hemisphere shape that concaves at center with led chip 2, the inner cavity size of the 3rd mold is greater than the inner cavity size of second mold, the liquid-transparent glue laminated annotated be fixed with in this half-finished the 3rd mold, baking forms second substratum transparent 5, carry out the demoulding again, the refractive index of second substratum transparent 5 is less than or equal to the refractive index of fluorescence glue-line 4, and light transmittance is greater than 90%.
The shape of first mold, second mold and the 3rd mold not only is limited to the shape in the foregoing description in the specific implementation, also can realize light source space colour temperature uniformity consistency by the mould that adopts other shapes and thickness.
Fluorescence glue-line 4 is by specific mould injection-compression molding in the high-power LED encapsulation structure of the embodiment of the invention, its thickness is even, can realize light source space colour temperature uniformity consistency preferably by the shape of control fluorescence glue-line and the even distribution of fluorescent material of thickness and inside; Pressure injection has first substratum transparent 3 between fluorescence glue-line 4 and led chip 2 and the substrate 1, and this first substratum transparent 3 can prevent that the fluorescent material of fluorescence glue-line 4 is deposited in the contact surface of colloid and substrate 1, thereby improves the adhesion between colloid and the substrate 1; First substratum transparent 3 can prevent that fluorescent material from directly contacting with the high led chip of caloric value, improves reliability of products, reduces light decay.
The above is the specific embodiment of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also are considered as protection scope of the present invention.
Claims (8)
1. a high-power LED encapsulation structure is characterized in that, comprising:
Substrate;
Be fixed on the led chip of described substrate one side;
Is that the center pressure injection forms, refractive index greater than 1.41 first substratum transparent at the substrate surface that is fixed with described led chip one side with described led chip;
Pressure injection forms outside described first substratum transparent, refractive index is less than or equal to the fluorescence glue-line of described first substratum transparent;
Described fluorescence glue-line external pressure annotate form, refractive index is less than or equal to second substratum transparent of described fluorescence glue-line.
2. high-power LED encapsulation structure as claimed in claim 1 is characterized in that, described substrate is metal substrate or ceramic substrate.
3. high-power LED encapsulation structure as claimed in claim 1, it is characterized in that, described first substratum transparent is hemisphere shape or square shape, and the shape of described fluorescence glue-line is identical with the shape of described first substratum transparent, and described second substratum transparent is the hemisphere shape.
4. a high-power LED packaging method is characterized in that, comprises the steps:
Led chip is fixed to substrate one side;
Is that the center pressure injection forms first substratum transparent at the substrate surface that is fixed with described led chip one side with described led chip;
Pressure injection forms the fluorescence glue-line outside described first substratum transparent;
Annotate formation second substratum transparent at described fluorescence glue-line external pressure.
5. high-power LED packaging method as claimed in claim 4 is characterized in that, led chip is fixed to substrate one side is specially:
Connect led chip and substrate with gold thread, led chip is fixed to substrate one side.
6. high-power LED packaging method as claimed in claim 4 is characterized in that, described substrate is metal substrate or ceramic substrate.
7. high-power LED encapsulation structure as claimed in claim 4, it is characterized in that, described first substratum transparent is hemisphere shape or square shape, and the shape of described fluorescence glue-line is identical with the shape of described first substratum transparent, and described second substratum transparent is the hemisphere shape.
8. as each described high-power LED encapsulation structure of claim 4 to 7, it is characterized in that the refractive index of described first substratum transparent is greater than 1.41, the refractive index of described first substratum transparent, fluorescence glue-line, second substratum transparent equates or reduces successively.
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| CN2010102563582A CN101982892A (en) | 2010-08-18 | 2010-08-18 | Packaging structure and method of high-power LED |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102324453A (en) * | 2011-09-30 | 2012-01-18 | 深圳市灏天光电有限公司 | High-power LED (Light Emitting Diode) packaging process of double-layer lens |
| CN102709454A (en) * | 2012-05-30 | 2012-10-03 | 上舜照明（中国）有限公司 | Surface-roughened double-layer adhesive structure LED light source and manufacturing method thereof |
| CN103022316A (en) * | 2012-12-04 | 2013-04-03 | 彩虹集团公司 | High-power light-emitting diode (LED) lamp and packaging method thereof |
| CN103489997A (en) * | 2012-06-09 | 2014-01-01 | 王树生 | LED and LED manufacturing method |
| CN104393155A (en) * | 2014-11-03 | 2015-03-04 | 中国计量学院 | Symmetric period-based light-emitting diode encapsulation method and LED encapsulation body |
| CN105552067A (en) * | 2016-02-02 | 2016-05-04 | 上海鼎晖科技股份有限公司 | COB LED light source |
| CN108803142A (en) * | 2018-06-28 | 2018-11-13 | 武汉华星光电技术有限公司 | Light source and preparation method thereof, backlight module, display panel |
| CN108847439A (en) * | 2018-04-28 | 2018-11-20 | 华灿光电(苏州）有限公司 | A kind of packaging method and light emitting diode of light emitting diode |
| CN109817789A (en) * | 2018-12-25 | 2019-05-28 | 广州硅能照明有限公司 | A kind of COB encapsulation and preparation method thereof |
| CN117276424A (en) * | 2023-11-17 | 2023-12-22 | 江西斯迈得半导体有限公司 | LED packaging method and LED packaging structure |
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| CN102709454A (en) * | 2012-05-30 | 2012-10-03 | 上舜照明（中国）有限公司 | Surface-roughened double-layer adhesive structure LED light source and manufacturing method thereof |
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| CN104393155B (en) * | 2014-11-03 | 2017-02-15 | 中国计量学院 | Symmetric period-based light-emitting diode encapsulation method and LED encapsulation body |
| CN105552067A (en) * | 2016-02-02 | 2016-05-04 | 上海鼎晖科技股份有限公司 | COB LED light source |
| CN108847439A (en) * | 2018-04-28 | 2018-11-20 | 华灿光电(苏州）有限公司 | A kind of packaging method and light emitting diode of light emitting diode |
| CN108847439B (en) * | 2018-04-28 | 2020-07-07 | 华灿光电(苏州）有限公司 | Light emitting diode packaging method and light emitting diode |
| CN108803142A (en) * | 2018-06-28 | 2018-11-13 | 武汉华星光电技术有限公司 | Light source and preparation method thereof, backlight module, display panel |
| CN109817789A (en) * | 2018-12-25 | 2019-05-28 | 广州硅能照明有限公司 | A kind of COB encapsulation and preparation method thereof |
| CN117276424A (en) * | 2023-11-17 | 2023-12-22 | 江西斯迈得半导体有限公司 | LED packaging method and LED packaging structure |
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Application publication date: 20110302 |