CN104253194A - Structure and method for packaging of chip-size white LED (light emitting diode) - Google Patents

Structure and method for packaging of chip-size white LED (light emitting diode) Download PDF

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Publication number
CN104253194A
CN104253194A CN201410478585.8A CN201410478585A CN104253194A CN 104253194 A CN104253194 A CN 104253194A CN 201410478585 A CN201410478585 A CN 201410478585A CN 104253194 A CN104253194 A CN 104253194A
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CN
China
Prior art keywords
chip
structure
silica gel
area
encapsulating structure
Prior art date
Application number
CN201410478585.8A
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Chinese (zh)
Inventor
刘国旭
张俊福
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易美芯光(北京)科技有限公司
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Priority to CN201410478585.8A priority Critical patent/CN104253194A/en
Publication of CN104253194A publication Critical patent/CN104253194A/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The invention relates to a structure for packaging a chip-size white LED (light emitting diode). The packaging structure comprises a bare chip and a fluorescent powder coating layer, wherein the area of the packaging structure is slightly greater than the area of the bare chip. The packaging structure has the advantages that the bare chip is packaged on a heat radiating substrate in an inverting way, so an LED bracket and a golden line are not needed; the heat radiating property is improved through the reduction of heat transfer interface, the size of the white reflective area is approximate to the size of the ship surface, and the light density is high.

Description

A kind of encapsulating structure of chip size white light LEDs and method

Technical field

The present invention relates to the chip size packages technology of a kind of LED, be mainly used in, on illumination and backlight product, belonging to semiconductor lighting application.

Background technology

Traditional LED is placed on by chip on support or substrate, fluorescent material and silica gel mixture coated above support or by the optical lens of molding after sprayed with fluorescent powder and realize LED.The packaging body volume of these forms comparatively luminescence chip itself can go out greatly at least 7-8 doubly, and lighting angle and brightness are all subject to the restriction of substrate or support, cannot meet the demand of some application scenarios, have certain limitation.As shown in Figure 1 and Figure 2, the encapsulating structure with once optics and traditional SMD packing forms is respectively.

LED, as forth generation lighting source, has incomparable advantage, and its cost is relatively high, although the cost of LED industry chain links all declines to a certain extent to some extent in recent years, but LED replaces conventional illumination sources completely still needs a period of time.Long service life is one of advantage of LED, and theoretical value can reach more than 100,000 hours, but is limited to the impact of encapsulating material and encapsulating structure at present, and its useful life only reaches 30,000 hours.Although the material and function of LED support is in continuous lifting, its heat-sinking capability is limited, remains the key factor affecting the LED life-span.

In addition, also there is following technical problem in traditional packing forms:

Due to the restriction by support bowl cup structure, its lighting angle is only about 120 °.Beam angle is had to the application scenario of particular/special requirement, need encapsulation optical lens to adjust the lighting angle of LED.As illuminating LED flashlight, require that LED lighting angle is less, both can make full use of luminous energy, be also more conducive to the design of its secondary optics.The logical beam angle filling an optical lens or other means adjustment LED, increases the degree of freedom of LED light beam angle, but too increases encapsulation difficulty and complexity, too increase cost simultaneously;

Because the bowl cup structure of packaging body is larger relative to chip size, the area of phosphor powder layer is far longer than chip list area, the blue light that chip sends fully cannot mix with the gold-tinted that fluorescent material is excited, and causes the colorspace distribution of light uneven, affects optical property and the result of use of product;

The design of electrode uses gold thread more, and gold thread had both affected the spatial distribution of light, and also increase the packaging cost of LED, the size and shape of gold thread soldered ball often has influence on the performance of LED, adds technology difficulty simultaneously.Gold thread fracture is also failure mode common in LED, affects LED product reliability.

High-power LED encapsulation is subject to the restriction of support and bowl cup structure always, for high-power LED, can only adopt the packing forms of ceramic substrate encapsulation or COB at present or strengthen package dimension, both add packaging cost, and technically also faced a lot of bottleneck.Along with the update of product and improving constantly of consumer demand, some backlights and high-precision end product are proposed to volume is little, the requirement of slimming.Current LED volume is comparatively large, cannot realize slimming product.

Summary of the invention

The invention provides a kind of novel encapsulated technology, i.e. chip size packages CSP (chip scale package) technology, technical scheme disclosed by the invention is specially:

A kind of encapsulating structure of chip size white light LEDs, described encapsulating structure comprises bare chip and fluorescent material coating layer, and wherein, the area of described encapsulating structure is slightly larger than the area of described bare chip, described bare chip adopts the form of upside-down mounting to be encapsulated on heat-radiating substrate, eliminates LED support and gold thread; Described encapsulating structure enhances heat dispersion by reducing heat-transfer interface, and makes white light reflective surface close to chip surface size thus, and then makes optical density large.

Further, the area of described encapsulating structure is less than 1.5 times of described bare chip area.

A manufacture method for the encapsulating structure of chip size white light LEDs, the method comprises the steps:

1). substrate prepares: the diaphragm that can change viscosity is attached on the functional areas of temporary base, and toughness is all with in film two sides, and adhesive substrates, one side are fitted chip;

2). chip is fixed: be arranged on temporary base by inverted structure chip array, and substrate indicates with CCD identifiable design, because flip-chip P/N ties design, welds without the need to gold thread;

3). reflection glue is filled: high reverse--bias silica gel on chip surrounding is filled, makes silica gel and chip surface level, then baking-curing, final formation one surface-emitting type chip scale package structure;

4). patrix: temporary base is put into mould;

5). injecting glue: the fluorescent material and silica gel mixture that prepare ratio are injected mould;

6). matched moulds: will be marked with the mould of fluorescent material and be loaded with the substrate matched moulds of flip-chip, make fluorescent material and silica gel be uniformly distributed in chip surrounding, thickness be adjustable;

7). from mould: after baking sizing, temporary base is taken out;

8). cutting: the flip-chip arrangement according to array is cut;

9). peel off: adopt the mode of UV mode or heating the viscosity on diaphragm two sides to be reduced, and then be divided into single;

10). color-division, testing package.

Further, the described diaphragm changing viscosity comprises hot stripping film, UV film.

Further, high reverse--bias silica gel reflectivity reaches more than 98%, and its main component is TiO 2or BaSO 4.

Further, if wish making five surface-emitting type CSP, step 3 can be saved).

Further, the viscosity on described diaphragm two sides can be reduced to 0.03N/20mm.

Technical scheme disclosed by the invention has following technique effect:

1. wafer-level package (CSP) is without the need to using support and gold thread, and compared with the packing forms of identical performance, cost savings more than 20%, make LED more extensive in the application of every field, especially commercial lighting and domestic lighting field.

2. no rack structure, heat dispersion is splendid, extends useful life.Due to without support to the absorption of light and scattering process, the efficiency of light energy utilization improve.

3. five surface-emitting type CSP beam angles can reach more than 150 °, are convenient to secondary optical design; One surface-emitting type CSP beam angle can reach within 120 °, is convenient to axially get light design.

4. the colorspace distribution of light is even, and evenly luminous, light extraction efficiency is high.Improve the optical property of LED, improve the taste of application end product.

5. save encapsulating material, simplify packaging technology and program.

6. the encapsulation of great power LED is no longer subject to the restriction of encapsulating material and supporting structure, can encapsulate the size and shape of applicable power and selection light-emitting area as required.

7. packaging body is chip-scale size, can meet the slimming demand of backlight product and other military, civilian high-end product very well to the requirement of light source small size.

8. light-emitting area shape and size can design according to demand, and flexibility ratio is high.

Accompanying drawing explanation

Fig. 1 is the encapsulating structure with once optics in prior art.

Fig. 2 is SMD packing forms of the prior art.

Fig. 3 is chip scale package structure of the present invention.

Fig. 4 is the CSP process chart of chip scale package structure of the present invention.

Embodiment

In order to understand technical scheme of the present invention better, be further elaborated below in conjunction with accompanying drawing.

The invention provides a kind of novel encapsulated technology, i.e. chip size packages CSP (chip scale package) technology, as shown in Figure 3.CSP technology refers to the single-chip package technology of packaging body area slightly larger than bare chip area (being generally less than 1.5 times).Concrete, be chip direct package on heat-radiating substrate, eliminate original support, decrease a heat-transfer interface, there is splendid heat dispersion; Due to the lifting of heat dispersion, white light reflective surface is close to chip surface size, and therefore optical density is large, is applicable to the optical design of electric light source; Owing to adopting flip-chip, eliminate gold thread, reduce encapsulating material and cost of manufacture, improve product reliability simultaneously.Representing the development trend of high-capacity LED of future generation, is the present and following high performance-price ratio LED product.

The ratio of chip area and package area is close to 1:1, Total Product overall dimension is little, the demand of multiple TV backlight product slimming can be met, but also may be used for before this cannot the space of packaged light source, in ordinary luminaire, also there is advantage, contribute to the photochromic mixed effect of lifting LED and be convenient to secondary optical design.Keep higher luminous efficiency at higher current densities, than conventional package LED advantageously.The chip size packages that the present invention relates on flip LED chips, carries out fluorescent material directly cover, and have employed simple possible, the encapsulating material being applicable to batch production and technological process, can realize the white-light LED encapsulation product of high yield, low manufacturing cost.

Wafer-level package (CSP) is that array is arranged on temporary base chip, be made into the cope match-plate pattern of carrying fluorescent material and glue, fluorescent material and the silica gel mixture of the ratio for preparing is injected again in mould, matched moulds is carried out, from film, baking with the temporary base being loaded with chip, then according to chip size cutting, strippable substrate, complete and make single LEDs light source.

Particularly, the technological process of CSP structure is as shown in Figure 4:

1. substrate prepares: the diaphragm (as hot stripping film, UV film etc.) using automatic mulch applicator can change viscosity is attached on the functional areas of temporary base.Toughness is all with in film two sides, and adhesive substrates, one side are fitted chip;

2. chip is fixed: use general bonder, is arranged on temporary base by inverted structure chip array, and substrate indicates with CCD identifiable design.Because flip-chip P/N ties design, weld without the need to gold thread;

3. reflect glue to fill: use Universal dispenser, high reverse--bias silica gel on chip surrounding is filled, makes silica gel and chip surface level.Then baking-curing, final formation one surface-emitting type CSP.High reverse--bias silica gel reflectivity can reach more than 98%, and its prime cost is TiO2 or BaSO4 etc.If wish five surface-emitting type CSP, this step can be saved;

4. patrix: temporary base is put into mould;

5. injecting glue: the fluorescent material and silica gel mixture that prepare ratio are injected mould.

6. matched moulds: will be marked with the mould of fluorescent material and be loaded with the substrate matched moulds of flip-chip, make fluorescent material and silica gel be uniformly distributed in chip surrounding, thickness be adjustable;

7. from mould: after baking sizing, temporary base is taken out.

8. cut: the flip-chip arrangement according to array is cut.

9. peel off: adopt the mode of UV mode or heating the viscosity on diaphragm two sides to be reduced, usually can be reduced to about 0.03N/20mm, and then be divided into single;

10. color-division, testing package.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (7)

1. the encapsulating structure of a chip size white light LEDs, described encapsulating structure comprises bare chip and fluorescent material coating layer, and wherein, the area of described encapsulating structure is slightly larger than the area of described bare chip, described bare chip adopts the form of upside-down mounting to be encapsulated on heat-radiating substrate, eliminates LED support and gold thread; Described encapsulating structure enhances heat dispersion by reducing heat-transfer interface, and makes white light reflective surface close to chip surface size thus, and then makes optical density large.
2. structure according to claim 1, is characterized in that, the area of described encapsulating structure is less than 1.5 times of described bare chip area.
3. a manufacture method for the encapsulating structure of chip size white light LEDs as claimed in claim 1, the method comprises the steps:
1). substrate prepares: the diaphragm that can change viscosity is attached on the functional areas of temporary base, and toughness is all with in film two sides, and adhesive substrates, one side are fitted chip;
2). chip is fixed: be arranged on temporary base by inverted structure chip array, and substrate indicates with CCD identifiable design, because flip-chip P/N ties design, welds without the need to gold thread;
3). reflection glue is filled: high reverse--bias silica gel on chip surrounding is filled, makes silica gel and chip surface level, then baking-curing, final formation one surface-emitting type chip scale package structure;
4). patrix: temporary base is put into mould;
5). injecting glue: the fluorescent material and silica gel mixture that prepare ratio are injected mould;
6). matched moulds: will be marked with the mould of fluorescent material and be loaded with the substrate matched moulds of flip-chip, make fluorescent material and silica gel be uniformly distributed in chip surrounding, thickness be adjustable;
7). from mould: after baking sizing, temporary base is taken out;
8). cutting: the flip-chip arrangement according to array is cut;
9). peel off: adopt the mode of UV mode or heating the viscosity on diaphragm two sides to be reduced, and then be divided into single;
10). color-division, testing package.
4. method according to claim 3, is characterized in that, the described diaphragm changing viscosity comprises hot stripping film, UV film.
5. method according to claim 3, is characterized in that, high reverse--bias silica gel reflectivity reaches more than 98%, and its main component is TiO 2or BaSO 4.
6. method according to claim 3, is characterized in that, if wish making five surface-emitting type CSP, can save step 3).
7. method according to claim 3, is characterized in that, the viscosity on described diaphragm two sides can be reduced to 0.03N/20mm.
CN201410478585.8A 2014-09-18 2014-09-18 Structure and method for packaging of chip-size white LED (light emitting diode) CN104253194A (en)

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Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104916763A (en) * 2015-05-29 2015-09-16 广州市鸿利光电股份有限公司 Packaging method for chip scale packaging LED
CN105006510A (en) * 2015-07-29 2015-10-28 广州市鸿利光电股份有限公司 CSP LED package method
CN105006511A (en) * 2015-07-29 2015-10-28 广州市鸿利光电股份有限公司 LED package method
CN105047786A (en) * 2015-05-29 2015-11-11 广州市鸿利光电股份有限公司 Chip scale package LED packaging method
CN105242456A (en) * 2015-10-27 2016-01-13 深圳市华星光电技术有限公司 Light source assembly and backlight module
CN105280781A (en) * 2015-10-30 2016-01-27 晶科电子(广州)有限公司 Flip white-light LED device and manufacturing method thereof
CN105568329A (en) * 2016-02-23 2016-05-11 河源市众拓光电科技有限公司 Method for electrically plating copper on LED epitaxial wafer
CN105575957A (en) * 2016-02-22 2016-05-11 易美芯光(北京)科技有限公司 COB light source for white light LED
CN105990503A (en) * 2015-02-04 2016-10-05 晶能光电(江西)有限公司 Preparation method of white light LED chips
CN106025049A (en) * 2016-07-14 2016-10-12 东莞中之光电股份有限公司 Light-increasing CSP-standard LED packaging process and making method thereof
CN106058013A (en) * 2016-07-29 2016-10-26 江苏罗化新材料有限公司 Chip level LED packaging technology
WO2016192452A1 (en) * 2015-05-29 2016-12-08 广州市鸿利光电股份有限公司 Encapsulation method of csp led and csp led
CN106558639A (en) * 2015-09-24 2017-04-05 上海芯元基半导体科技有限公司 The LED component and its cutting unit and manufacture method of wafer level encapsulation
CN106764558A (en) * 2016-12-07 2017-05-31 东莞中之光电股份有限公司 A kind of CSP sparkle of illumination module production technology
CN106876534A (en) * 2017-01-23 2017-06-20 陕西光电科技有限公司 A kind of method for packing of flip-chip level LED light source
CN107621730A (en) * 2017-09-27 2018-01-23 安徽芯瑞达科技股份有限公司 Side-edge type backlight based on dual chip double circuit connection CSP lamp beads
CN107870482A (en) * 2017-09-27 2018-04-03 安徽芯瑞达科技股份有限公司 The side-edge type backlight for the CSP lamp beads that lighted based on dual chip one side
CN107870483A (en) * 2017-09-27 2018-04-03 安徽芯瑞达科技股份有限公司 The side-edge type backlight for the CSP lamp beads that lighted based on the face of dual chip three
CN107884984A (en) * 2017-09-27 2018-04-06 安徽芯瑞达科技股份有限公司 Side-edge type backlight based on bluish-green dual chip CSP lamp beads
WO2018121104A1 (en) * 2016-12-30 2018-07-05 江苏稳润光电有限公司 Chip scale package and packaging method
CN108400217A (en) * 2018-01-22 2018-08-14 东莞中之光电股份有限公司 A kind of high efficiency LED chip flip-chip packaged method
US10439111B2 (en) 2014-05-14 2019-10-08 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
US10497681B2 (en) 2015-09-18 2019-12-03 Genesis Photonics Inc. Light-emitting device

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Cited By (29)

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US10439111B2 (en) 2014-05-14 2019-10-08 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
CN105990503A (en) * 2015-02-04 2016-10-05 晶能光电(江西)有限公司 Preparation method of white light LED chips
CN104916763B (en) * 2015-05-29 2018-05-08 鸿利智汇集团股份有限公司 A kind of method for packing of wafer-level package LED
CN105047786A (en) * 2015-05-29 2015-11-11 广州市鸿利光电股份有限公司 Chip scale package LED packaging method
CN104916763A (en) * 2015-05-29 2015-09-16 广州市鸿利光电股份有限公司 Packaging method for chip scale packaging LED
WO2016192452A1 (en) * 2015-05-29 2016-12-08 广州市鸿利光电股份有限公司 Encapsulation method of csp led and csp led
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CN105006510B (en) * 2015-07-29 2017-06-06 鸿利智汇集团股份有限公司 A kind of method for packing of CSP LED
CN105006510A (en) * 2015-07-29 2015-10-28 广州市鸿利光电股份有限公司 CSP LED package method
CN105006511A (en) * 2015-07-29 2015-10-28 广州市鸿利光电股份有限公司 LED package method
US10497681B2 (en) 2015-09-18 2019-12-03 Genesis Photonics Inc. Light-emitting device
CN106558639B (en) * 2015-09-24 2019-05-21 上海芯元基半导体科技有限公司 The LED component and its cutting unit and production method of wafer grade encapsulation
CN106558639A (en) * 2015-09-24 2017-04-05 上海芯元基半导体科技有限公司 The LED component and its cutting unit and manufacture method of wafer level encapsulation
CN105242456A (en) * 2015-10-27 2016-01-13 深圳市华星光电技术有限公司 Light source assembly and backlight module
CN105280781A (en) * 2015-10-30 2016-01-27 晶科电子(广州)有限公司 Flip white-light LED device and manufacturing method thereof
CN105575957A (en) * 2016-02-22 2016-05-11 易美芯光(北京)科技有限公司 COB light source for white light LED
CN105568329A (en) * 2016-02-23 2016-05-11 河源市众拓光电科技有限公司 Method for electrically plating copper on LED epitaxial wafer
CN106025049A (en) * 2016-07-14 2016-10-12 东莞中之光电股份有限公司 Light-increasing CSP-standard LED packaging process and making method thereof
CN106025049B (en) * 2016-07-14 2018-08-24 东莞中之光电股份有限公司 The type that adds lustre to CSP standard LED package techniques and preparation method thereof
CN106058013A (en) * 2016-07-29 2016-10-26 江苏罗化新材料有限公司 Chip level LED packaging technology
CN106764558A (en) * 2016-12-07 2017-05-31 东莞中之光电股份有限公司 A kind of CSP sparkle of illumination module production technology
WO2018121104A1 (en) * 2016-12-30 2018-07-05 江苏稳润光电有限公司 Chip scale package and packaging method
CN106876534A (en) * 2017-01-23 2017-06-20 陕西光电科技有限公司 A kind of method for packing of flip-chip level LED light source
CN106876534B (en) * 2017-01-23 2019-07-02 陕西电子信息集团光电科技有限公司 A kind of packaging method of flip-chip grade LED light source
CN107870483A (en) * 2017-09-27 2018-04-03 安徽芯瑞达科技股份有限公司 The side-edge type backlight for the CSP lamp beads that lighted based on the face of dual chip three
CN107621730A (en) * 2017-09-27 2018-01-23 安徽芯瑞达科技股份有限公司 Side-edge type backlight based on dual chip double circuit connection CSP lamp beads
CN107884984A (en) * 2017-09-27 2018-04-06 安徽芯瑞达科技股份有限公司 Side-edge type backlight based on bluish-green dual chip CSP lamp beads
CN107870482A (en) * 2017-09-27 2018-04-03 安徽芯瑞达科技股份有限公司 The side-edge type backlight for the CSP lamp beads that lighted based on dual chip one side
CN108400217A (en) * 2018-01-22 2018-08-14 东莞中之光电股份有限公司 A kind of high efficiency LED chip flip-chip packaged method

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Application publication date: 20141231