CN106935694A - A kind of CSP LED encapsulation methods - Google Patents
A kind of CSP LED encapsulation methods Download PDFInfo
- Publication number
- CN106935694A CN106935694A CN201710260967.7A CN201710260967A CN106935694A CN 106935694 A CN106935694 A CN 106935694A CN 201710260967 A CN201710260967 A CN 201710260967A CN 106935694 A CN106935694 A CN 106935694A
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- China
- Prior art keywords
- white reflection
- chip
- csp
- barricade
- flip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention discloses a kind of CSP LED encapsulation methods, comprise the following steps that:Step one, offer central area are empty white reflection enclosure wall, and the white reflection enclosure wall is to be joined end to end to be surrounded by multiple white reflection barricades;Step 2, offer support plate;Step 3, by biadhesive film patch with support plate on;Step 4, by white reflection barricade patch with biadhesive film on;Step 5, the center dummy section that flip-chip is fixed to white reflection enclosure wall;Step 6, the gap location on flip-chip, between flip-chip and white reflection barricade are coated with transparent glue, and toast;After step 7, transparent glue drying fluorescent material is coated on transparent glue surface;Completed so as to full wafer CSP modules are encapsulated;Step 8, by packaged full wafer CSP modules cutting-up into single CSP LED;Step 9, biadhesive film is peeled off from support plate;Step 10, single good CSP LED of cutting-up is peeled off from biadhesive film, complete CSP LED encapsulation.Present invention lifting LED chip light extraction efficiency.
Description
Technical field
The present invention relates to LED encapsulation technologies field, particularly a kind of CSP LED encapsulation methods.
Background technology
CSP in the market(Chip Scale Package)Encapsulation is main to have five faces luminous and the luminous two kinds of encapsulation of one side
Form, the luminous light extraction efficiency in five faces is high, but due to being luminous from five faces, photochromic uniformity and directive property is poor, and high-end
The field photochromic uniformity of equal demand is good, and the directive property that lights is good, is easy to luminous intensity distribution, it is impossible to meet the application of high-end field;One side lights
Packing forms, chip surrounding is wrapped up using white barricade so that chip front side light extraction, other four sides not light extractions, Ci Zhongfeng
Fill photochromic uniformity good, the directive property that lights is good, but packaging technology needs the first white wall of pressing mold around flip-chip, then in chip
Surface pressing mold white light glue, packaging technology is extremely complex, and white wall attaches cannot be reflected with chip surrounding, chip surrounding light completely
Out, cause the luminous CSP product luminous efficiencies of one side in the market relatively low.
The content of the invention
The technical problems to be solved by the invention are to overcome the deficiencies in the prior art and provide a kind of CSP LED encapsulation sides
Method, simplifies the packaging technology of the luminous CSP products of one side so that CSP products are more convenient for producing in enormous quantities, while improve one side
Luminous CSP product light extraction efficiencies.
The present invention uses following technical scheme to solve above-mentioned technical problem:
According to a kind of CSP LED encapsulation methods proposed by the present invention, comprise the following steps:
Step one, offer central area are empty white reflection enclosure wall, and the white reflection enclosure wall is kept off by multiple white reflections
Wall joins end to end and is surrounded;
Step 2, offer support plate;
Step 3, by biadhesive film patch with support plate on;
Step 4, by white reflection barricade patch with biadhesive film on;
Step 5, the center dummy section that flip-chip is fixed to white reflection enclosure wall;
Step 6, the gap location on flip-chip, between flip-chip and white reflection barricade are coated with transparent glue, and dry
It is roasting;
In flip-chip and transparent glue surface coating fluorescent material after step 7, transparent glue drying;So as to full wafer CSP modules envelope
Install into;
Step 8, by packaged full wafer CSP modules cutting-up into single CSP LED;
Step 9, biadhesive film is peeled off from support plate;
Step 10, single good CSP LED of cutting-up is peeled off from biadhesive film, complete CSP LED encapsulation.
As a kind of further prioritization scheme of CSP LED encapsulation methods of the present invention, the top surface of white reflection barricade
Higher than the top surface of flip-chip.
As a kind of further prioritization scheme of CSP LED encapsulation methods of the present invention, the material of white reflection barricade
It is epoxy or silica gel ceramics.
As a kind of further prioritization scheme of CSP LED encapsulation methods of the present invention, the material of white reflection barricade
It is plastics.
Used as a kind of further prioritization scheme of CSP LED encapsulation methods of the present invention, fluorescent material is fluorescent glue, fluorescence
Film or fluorescent powder crystal.
The present invention uses above technical scheme compared with prior art, with following technique effect:
(1)The present invention uses white reflection barricade, and the light that chip sends is reflected into lifting CSP LED hairs to greatest extent
Light efficiency;.
(2)The present invention uses white reflection barricade, is directly affixed on biadhesive film, then fixed chip is to barricade white space,
Reduce the technology difficulty that barricade is coated in chip circumference, improving production efficiency, reduces cost;
(3)The present invention coats transparent glue in chip and white reflection barricade gap, lifts LED chip light extraction efficiency.
Brief description of the drawings
Fig. 1 is white reflection barricade schematic top plan view.
Fig. 2 is white reflection barricade schematic cross-section.
Fig. 3 is support plate schematic diagram.
Fig. 4 is that biadhesive film is affixed on schematic diagram on support plate.
Fig. 5 is that biadhesive film is affixed on support plate upper side schematic diagram.
Fig. 6 is white reflection barricade patch and schematic diagram on biadhesive film.
Fig. 7 is white reflection barricade patch and biadhesive film upper section schematic diagram.
Fig. 8 is that flip-chip is fixed to white reflection barricade central blank area schematic diagram.
Fig. 9 is that flip-chip is fixed to white reflection barricade central blank area schematic cross-section.
Figure 10 is in flip-chip and white barricade gap location coating transparent glue schematic diagram.
Figure 11 is flip-chip and transparent glue surface coating fluorescent material schematic diagram.
Figure 12 is full wafer CSP modules cutting-up into single schematic diagram.
Figure 13 is that biadhesive film is peeled off into schematic diagram from support plate.
Figure 14 is packaged CSP finished product schematic diagrames.
Reference in figure is:1- white reflection barricades, 2- support plates, 3- biadhesive films, 4- flip LED chips, 5-
Transparent glue, 6- fluorescent material.
Specific embodiment
Technical scheme is described in further detail below in conjunction with the accompanying drawings:
A kind of CSP LED encapsulation methods, comprise the following steps:
Step one, such as Fig. 1 are white reflection barricade schematic top plan views, and Fig. 2 is white reflection barricade schematic cross-section;Offer center
Region is empty white reflection enclosure wall, and the white reflection enclosure wall is to be joined end to end to be surrounded by multiple white reflection barricades 1;
Step 2, such as Fig. 3 are support plate schematic diagrames, there is provided support plate 2;
Step 3, such as Fig. 4 are that biadhesive film is affixed on schematic diagram on support plate, and Fig. 5 is that biadhesive film is affixed on support plate upper side and shows
Be intended to, by biadhesive film 3 paste with support plate;
Step 4, such as Fig. 6 be white reflection barricade patch with biadhesive film on schematic diagram, such as Fig. 7 be white reflection barricade patch with
Biadhesive film upper section schematic diagram, by white reflection barricade patch and biadhesive film;
Step 5, such as Fig. 8 are that flip-chip is fixed to white reflection barricade central blank area schematic diagram, and Fig. 9 is flip-chip
It is fixed to white reflection barricade central blank area schematic cross-section;Flip-chip 4 is fixed to the center of white reflection enclosure wall
Dummy section;
Step 6, Figure 10 are, in flip-chip and white barricade gap location coating transparent glue schematic diagram, on flip-chip, to fall
Gap location between cartridge chip and white reflection barricade is coated with transparent glue 5, and toasts;
Step 7, Figure 11 are flip-chip and transparent glue surface coating fluorescent material schematic diagram, in upside-down mounting after transparent glue drying
Chip and transparent glue surface coating fluorescent material 6;Completed so as to full wafer CSP modules are encapsulated;
Step 8, by packaged full wafer CSP modules cutting-up into single CSP LED, such as Figure 12 is full wafer CSP module cutting-ups Cheng Dan
Schematic diagram;
Step 9, it is as shown in figure 13 that biadhesive film is peeled off into schematic diagram from support plate, biadhesive film is shelled from support plate
From;
Step 10, single good CSP LED of cutting-up is peeled off from biadhesive film, complete CSP LED encapsulation.As shown in figure 14
It is packaged CSP finished product schematic diagrames.
Top surface of the top surface of white reflection barricade of the invention higher than flip-chip.
White reflection barricade is completed before encapsulation work, is made without Molding in encapsulation process, is reduced technology difficulty and is carried
Production efficiency is risen, the material of white reflection barricade is epoxy, plastics or silica gel, ceramics.
Fluorescent material is fluorescent glue, fluorescent film or fluorescent powder crystal.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no need and unable to be exhaustive to all of implementation method.And these
Belong to obvious change that connotation of the invention extends out or variation still falls within protection scope of the present invention.
Claims (5)
1. a kind of CSP LED encapsulation methods, it is characterised in that comprise the following steps:
Step one, offer central area are empty white reflection enclosure wall, and the white reflection enclosure wall is kept off by multiple white reflections
Wall joins end to end and is surrounded;
Step 2, offer support plate;
Step 3, by biadhesive film patch with support plate on;
Step 4, by white reflection barricade patch with biadhesive film on;
Step 5, the center dummy section that flip-chip is fixed to white reflection enclosure wall;
Step 6, the gap location on flip-chip, between flip-chip and white reflection barricade are coated with transparent glue, and dry
It is roasting;
In flip-chip and transparent glue surface coating fluorescent material after step 7, transparent glue drying;So as to full wafer CSP modules envelope
Install into;
Step 8, by packaged full wafer CSP modules cutting-up into single CSP LED;
Step 9, biadhesive film is peeled off from support plate;
Step 10, single good CSP LED of cutting-up is peeled off from biadhesive film, complete CSP LED encapsulation.
2. a kind of CSP LED encapsulation methods according to claim 1, it is characterised in that the top surface of white reflection barricade is high
In the top surface of flip-chip.
3. a kind of CSP LED encapsulation methods according to claim 1, it is characterised in that the material of white reflection barricade is
Epoxy or silica gel ceramics.
4. a kind of CSP LED encapsulation methods according to claim 1, it is characterised in that the material of white reflection barricade is
Plastics.
5. a kind of CSP LED encapsulation methods according to claim 1, it is characterised in that fluorescent material is fluorescent glue, fluorescent film
Or fluorescent powder crystal.
Priority Applications (1)
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CN201710260967.7A CN106935694A (en) | 2017-04-20 | 2017-04-20 | A kind of CSP LED encapsulation methods |
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CN201710260967.7A CN106935694A (en) | 2017-04-20 | 2017-04-20 | A kind of CSP LED encapsulation methods |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108091749A (en) * | 2017-12-22 | 2018-05-29 | 鸿利智汇集团股份有限公司 | A kind of manufacturing method of CSP |
CN108281531A (en) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | A kind of CSP LED encapsulation methods |
CN109449151A (en) * | 2018-12-20 | 2019-03-08 | 华天科技(西安)有限公司 | It is a kind of close to encapsulation structure of optical sensor and packaging method |
CN110131599A (en) * | 2019-05-21 | 2019-08-16 | 厦门市东太耀光电子有限公司 | A kind of CSP LED of the reflective white wall of level |
CN110690243A (en) * | 2019-10-15 | 2020-01-14 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
CN114220897A (en) * | 2021-12-22 | 2022-03-22 | 鸿利智汇集团股份有限公司 | LED and packaging method |
CN114497318A (en) * | 2021-12-31 | 2022-05-13 | 江苏泓冠光电科技有限公司 | CSP packaging process |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108091749A (en) * | 2017-12-22 | 2018-05-29 | 鸿利智汇集团股份有限公司 | A kind of manufacturing method of CSP |
CN108281531A (en) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | A kind of CSP LED encapsulation methods |
CN109449151A (en) * | 2018-12-20 | 2019-03-08 | 华天科技(西安)有限公司 | It is a kind of close to encapsulation structure of optical sensor and packaging method |
CN110131599A (en) * | 2019-05-21 | 2019-08-16 | 厦门市东太耀光电子有限公司 | A kind of CSP LED of the reflective white wall of level |
CN110690243A (en) * | 2019-10-15 | 2020-01-14 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
CN110690243B (en) * | 2019-10-15 | 2022-06-17 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
CN114220897A (en) * | 2021-12-22 | 2022-03-22 | 鸿利智汇集团股份有限公司 | LED and packaging method |
CN114220897B (en) * | 2021-12-22 | 2022-09-20 | 鸿利智汇集团股份有限公司 | LED and packaging method |
CN114497318A (en) * | 2021-12-31 | 2022-05-13 | 江苏泓冠光电科技有限公司 | CSP packaging process |
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Effective date of registration: 20180813 Address after: 212009 88 Wei Yi Road, Ding Mao Development Area, Zhenjiang, Jiangsu Applicant after: Wenrui Photoelectric Co., Ltd., Jiangsu Address before: 212009 88 Wei Yi Road, Ding Mao Development Area, Zhenjiang, Jiangsu Applicant before: Jiangsu Wenrun Optoelectronic Technology Co., Ltd. |
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Application publication date: 20170707 |