CN105895781A - Package structure and package method of blue-light LED flip chip - Google Patents
Package structure and package method of blue-light LED flip chip Download PDFInfo
- Publication number
- CN105895781A CN105895781A CN201610389957.9A CN201610389957A CN105895781A CN 105895781 A CN105895781 A CN 105895781A CN 201610389957 A CN201610389957 A CN 201610389957A CN 105895781 A CN105895781 A CN 105895781A
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- China
- Prior art keywords
- chip
- glue
- line
- reflective
- fluorescent material
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a package structure and package method of a blue-light LED flip chip. The package structure comprises a substrate, a chip, a fluorescent powder adhesive layer and white reflection adhesive layers, wherein the chip is inversely arranged on the substrate, the fluorescent powder adhesive layer covers the top surface of the chip, and the reflection adhesive layers encircle the periphery of the chip. The package method comprises the following steps of 1) fixedly welding a plurality of chips on the substrate, wherein the chips are arranged in a matrix way; 2) coating gaps among the chips with the white reflection adhesive layers, wherein the heights of reflection adhesives are flush with the heights of the chips; 3) covering the top surfaces of the chips and the top surfaces of the reflection adhesives with the fluorescent powder adhesive layer; and 4) cutting an LED lamp panel to a plurality of LED lamps after the fluorescent powder adhesive layer is cured. The white reflection adhesives encircle the periphery of the blue-light LED flip chip, only the top surface of the whole chip is reserved, the top surface of the chip is coated with the fluorescent powder adhesive layer, fluorescent powder in the adhesive layer is uniform in distribution, uniform given-out light of the LED lamps is ensured, and a light spot is eliminated.
Description
[technical field]
The present invention relates to LED chip encapsulation, particularly relate to a kind of blue-ray LED flip-chip encapsulating structure and
Method for packing.
[background technology]
Generally six faces of LED flip chip can be luminous.By eutectic or backflow bottom LED flip chip
After solid welding is welded on substrate, other five face out luminescence.Owing to conventional die sends blue light, thus during encapsulation
Chip surrounding fluorescent material to be coated with.
A kind of high reliability LED encapsulation structure of the disclosure of the invention of Application No. CN201410561610.9, bag
Including metal rack and at least one LED flip chip, described LED flip chip is fixed to by Flip Chip
On metal rack, LED flip chip surface is coated with fluorescent material, use epoxy resin by LED flip chip and
Metal rack is together coated with.
Owing to fluorescent material is the colloidal liquid that powder body mixes with glue, before glue curing, powder body also exists
Slowly sedimentation, so chip surrounding can not be distributed consistent with fluorescent material above, the LED chip after encapsulation
Can not uniformity to the light that goes out of all directions.This encapsulating structure is when using the height optically focused such as ability pocket lamp
During illumination, hot spot clearly, affects lighting effect.
[summary of the invention]
The technical problem to be solved in the present invention is to provide one can eliminate hot spot, the blue-ray LED that lighting effect is good
The encapsulating structure of flip-chip.
The present invention another to solve the technical problem that the encapsulation being to provide a kind of above-mentioned blue-ray LED flip-chip
Method.
In order to solve above-mentioned technical problem, the technical solution used in the present invention is, a kind of blue-ray LED upside-down mounting core
The encapsulating structure of sheet, including substrate, the chip being inverted on substrate, covers the phosphor gel at chip end face
Layer and the reflective glue-line of white, reflective glue-line surrounds the periphery of chip.
Above-described encapsulating structure, described reflective glue-line is by transparent silica gel and resistant to elevated temperatures white reflection powder
System becomes.
Above-described encapsulating structure, described reflective powder body is titanium dioxide, S iO2Powder or Al2O3Powder.
Above-described encapsulating structure, by weight percentage, the content of reflective powder body is 5-50%, transparent silica gel
Content be 50-95%.
Above-described encapsulating structure, described resistant to elevated temperatures white reflection powder body can bear the height of more than 200 DEG C
Temperature.
Above-described encapsulating structure, the fluorescent material that the height of reflective glue-line is concordant with the height of chip, described
Glue-line covers at chip end face and the end face of reflective glue-line.
Above-described encapsulating structure, including hemispherical lens, hemispherical lens is positioned at the upper of fluorescent material glue-line
Side.
The method for packing of a kind of blue-ray LED flip-chip, comprises the following steps:
801) being admittedly soldered on substrate by a plurality of chips, chip is arranged in a matrix；
802) space between the chips is coated with the reflective glue of white；The height of reflective glue and the height of chip
Concordant；
803) fluorescent material glue-line is covered at the end face of chip and the end face of reflective glue；
804), after fluorescent material curable adhesive layer, LED lamp panel is cut into single led lamp.
Above-described method for packing, includes mould top step after step 803, and mould top step is at fluorescent material
The end face of glue-line makes transparent enclosure glue-line, and transparent enclosure glue-line includes that the hemispherical corresponding with number of chips is saturating
Mirror.
The surrounding of blue-ray LED flip-chip of the present invention has the reflective glue of white to surround, and only reserves whole chip
End face, fluorescent material glue-line is only coated on chip end face, and fluorescent material is uniformly distributed, it is ensured that LED uniform in light emission,
Eliminate hot spot.
[accompanying drawing explanation]
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Fig. 1 is the schematic diagram of embodiment of the present invention blue-ray LED flip chip packaging structure.
Fig. 2 is the schematic diagram of the encapsulating structure lamp plate of embodiment of the present invention blue-ray LED flip-chip.
Fig. 3 is the flow chart of the method for packing of embodiment of the present invention blue-ray LED flip-chip.
[detailed description of the invention]
The structure of embodiment of the present invention LED lamp bead is as it is shown in figure 1, embodiment of the present invention LED lamp bead uses indigo plant
Light LED flip chip encapsulates, the LED chip 2 that including substrate 1, is inverted on substrate, fluorescent material glue-line 3,
Hemispherical lens 4 and the reflective glue-line 5 of white.Substrate 1 includes insulated substrate 101, and insulated substrate has weldering
Dish 102.
The reflective glue-line 5 of white surrounds the periphery of chip 2, the height of the reflective glue-line 5 of white and chip 2
Height concordant, fluorescent material glue-line 3 covers at the end face of chip 2 and the end face of reflective glue-line 5.Hemispherical
Lens 4 are packaged in the top of fluorescent material glue-line 3.
Wherein, reflective glue-line 5 is stirred by transparent silica gel and resistant to elevated temperatures white reflection powder body and makes.Reflective powder
Body can use titanium dioxide, S i O2Powder or Al2O3Powder, it is possible to bear the high temperature of more than 200 DEG C, preferably titanium white
Powder.
By weight percentage, the content of reflective powder body is 5-50% to reflective glue, and the content of transparent silica gel is 50-95%.
The method for packing of embodiment of the present invention LED lamp bead as shown in Figures 2 and 3, comprises the following steps:
1) reflective glue, substrate, blue-ray LED flip-chip and phosphor gel are prepared；
2) being admittedly soldered on substrate by chip, clean, dry, during die bond, multiple chips are arranged in a matrix, just
In cutting later；
3) space between the chips is coated with the reflective glue of white, levelling, drying；The height of reflective glue with
The height of chip is concordant, and the surrounding of chip is all surrounded by reflective glue；
4) fluorescent material glue-line, drying are disposably covered at the end face of chip and the end face of reflective glue；
5), after fluorescent material curable adhesive layer, the end face at fluorescent material glue-line makes transparent enclosure glue-line, transparent enclosure
The top of glue-line includes the hemispherical lens corresponding with number of chips；
6) make line of cut 103, by the direction of line of cut 103, LED lamp panel is divided into single led lamp；
The surrounding of above example blue-ray LED flip-chip of the present invention has the reflective glue of white to surround, and leaves behind
The end face of whole chip, makes the photon of chip surrounding not send out not go out, and chip is sent by reflective powder body to surrounding
Some light is reflected towards sending above.The fluorescent material glue-line of the embodiment of the present invention is only coated on above chip one
On face, the fluorescent material in glue-line is uniformly distributed, it is ensured that LED uniform in light emission, eliminates hot spot.
Claims (9)
1. an encapsulating structure for blue-ray LED flip-chip, including substrate, the chip being inverted on substrate and
Cover the fluorescent material glue-line at chip end face, it is characterised in that include the reflective glue-line of white, reflective glue-line
Surround the periphery of chip.
Encapsulating structure the most according to claim 1, it is characterised in that described reflective glue-line is by transparent
Silica gel and resistant to elevated temperatures white reflection powder body are made.
Encapsulating structure the most according to claim 2, it is characterised in that described reflective powder body is titanium white
Powder, SiO2Powder or Al2O3Powder.
Encapsulating structure the most according to claim 2, it is characterised in that by weight percentage, reflective powder
The content of body is 5-50%, and the content of transparent silica gel is 50-95%.
Encapsulating structure the most according to claim 2, it is characterised in that described resistant to elevated temperatures white reflection
Powder body can bear the high temperature of more than 200 DEG C.
Encapsulating structure the most according to claim 1, it is characterised in that the height of reflective glue-line and chip
Height concordant, described fluorescent material glue-line covers at chip end face and the end face of reflective glue-line.
Encapsulating structure the most according to claim 1, it is characterised in that include hemispherical lens, hemisphere
Shape lens are positioned at the top of fluorescent material glue-line.
8. the method for packing of a blue-ray LED flip-chip, it is characterised in that comprise the following steps:
801) being admittedly soldered on substrate by a plurality of chips, chip is arranged in a matrix；
802) space between the chips is coated with the reflective glue of white；The height of reflective glue is put down with the height of chip
Together；
803) fluorescent material glue-line is covered at the end face of chip and the end face of reflective glue；
804), after fluorescent material curable adhesive layer, LED lamp panel is cut into single led lamp.
Method for packing the most according to claim 8, it is characterised in that include mould after step 803
Top step, mould top step makes transparent enclosure glue-line at the end face of fluorescent material glue-line, and transparent enclosure glue-line includes
The hemispherical lens corresponding with number of chips.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610389957.9A CN105895781A (en) | 2016-06-02 | 2016-06-02 | Package structure and package method of blue-light LED flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610389957.9A CN105895781A (en) | 2016-06-02 | 2016-06-02 | Package structure and package method of blue-light LED flip chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105895781A true CN105895781A (en) | 2016-08-24 |
Family
ID=56710150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610389957.9A Pending CN105895781A (en) | 2016-06-02 | 2016-06-02 | Package structure and package method of blue-light LED flip chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105895781A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876551A (en) * | 2016-12-30 | 2017-06-20 | 东莞中之光电股份有限公司 | Chip-scale LED packaging technologies |
| CN106935694A (en) * | 2017-04-20 | 2017-07-07 | 江苏稳润光电科技有限公司 | A kind of CSP LED encapsulation methods |
| CN107195624A (en) * | 2017-05-10 | 2017-09-22 | 佛山市国星光电股份有限公司 | A kind of small spacing LED component and its method for packing and the display screen being produced from it |
| CN107507899A (en) * | 2017-08-16 | 2017-12-22 | 深圳市兆驰节能照明股份有限公司 | The luminous CSP light sources of one side and its manufacture method |
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
| CN114335292A (en) * | 2021-12-22 | 2022-04-12 | 深圳市玲涛光电科技有限公司 | High-brightness LED lamp bead and preparation method and application thereof |
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| CN1674316A (en) * | 2004-03-25 | 2005-09-28 | 西铁城电子股份有限公司 | Semiconductor light-emitting device |
| CN102208401A (en) * | 2007-12-18 | 2011-10-05 | 亿广科技(上海)有限公司 | LED (Light-emitting diode) light strip |
| CN102308399A (en) * | 2008-12-30 | 2012-01-04 | 三星Led株式会社 | Light-emitting-device package and a method for producing the same |
| CN102709454A (en) * | 2012-05-30 | 2012-10-03 | 上舜照明（中国）有限公司 | Surface-roughened double-layer adhesive structure LED light source and manufacturing method thereof |
-
2016
- 2016-06-02 CN CN201610389957.9A patent/CN105895781A/en active Pending
Patent Citations (4)
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|---|---|---|---|---|
| CN1674316A (en) * | 2004-03-25 | 2005-09-28 | 西铁城电子股份有限公司 | Semiconductor light-emitting device |
| CN102208401A (en) * | 2007-12-18 | 2011-10-05 | 亿广科技(上海)有限公司 | LED (Light-emitting diode) light strip |
| CN102308399A (en) * | 2008-12-30 | 2012-01-04 | 三星Led株式会社 | Light-emitting-device package and a method for producing the same |
| CN102709454A (en) * | 2012-05-30 | 2012-10-03 | 上舜照明（中国）有限公司 | Surface-roughened double-layer adhesive structure LED light source and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876551A (en) * | 2016-12-30 | 2017-06-20 | 东莞中之光电股份有限公司 | Chip-scale LED packaging technologies |
| CN106935694A (en) * | 2017-04-20 | 2017-07-07 | 江苏稳润光电科技有限公司 | A kind of CSP LED encapsulation methods |
| CN107195624A (en) * | 2017-05-10 | 2017-09-22 | 佛山市国星光电股份有限公司 | A kind of small spacing LED component and its method for packing and the display screen being produced from it |
| CN107195624B (en) * | 2017-05-10 | 2023-09-15 | 佛山市国星光电股份有限公司 | Small-spacing LED device, packaging method thereof and display screen manufactured by same |
| CN107507899A (en) * | 2017-08-16 | 2017-12-22 | 深圳市兆驰节能照明股份有限公司 | The luminous CSP light sources of one side and its manufacture method |
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
| CN114335292A (en) * | 2021-12-22 | 2022-04-12 | 深圳市玲涛光电科技有限公司 | High-brightness LED lamp bead and preparation method and application thereof |
| CN114335292B (en) * | 2021-12-22 | 2022-12-27 | 深圳市玲涛光电科技有限公司 | High-brightness LED lamp bead and preparation method and application thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518000 Guangdong, Shenzhen, Shenzhen, Guangdong, Baoan District Songgang street, Dongfang Datian industrial area (Huamei section), building B and two building on the first floor of building A1 Applicant after: Shenzhen Da Yongkang science and Technology Co., Ltd. Address before: 518000 Guangdong, Shenzhen, Shenzhen, Guangdong, Baoan District Songgang street, Dongfang Datian industrial area (Huamei section), building B and two building on the first floor of building A1 Applicant before: SHENZHEN JINGCI PHOTOELECTRIC CO., LTD. |
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| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160824 |
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| RJ01 | Rejection of invention patent application after publication |