CN106876551A - Chip-scale LED packaging technologies - Google Patents
Chip-scale LED packaging technologies Download PDFInfo
- Publication number
- CN106876551A CN106876551A CN201611265322.4A CN201611265322A CN106876551A CN 106876551 A CN106876551 A CN 106876551A CN 201611265322 A CN201611265322 A CN 201611265322A CN 106876551 A CN106876551 A CN 106876551A
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- Prior art keywords
- chip
- fluorescence diaphragm
- fluorescence
- diaphragm
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000012536 packaging technology Methods 0.000 title claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000005538 encapsulation Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 claims abstract description 13
- 239000012528 membrane Substances 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 238000005470 impregnation Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims 2
- 230000008023 solidification Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of chip-scale LED packaging technologies, comprise the following steps：Step one a, there is provided ceramic substrate；Step 2：Some chips are provided, uniform intervals are placed on ceramic substrate；Step 3：Fluorescence diaphragm is provided, covering is on the chip；Step 4：The fluorescence diaphragm is cut, is divided into some spaced fluorescence diaphragms, each fluorescence diaphragm to be corresponded with chip；Appearance and size of the appearance and size of each fluorescence diaphragm more than the chip；Step 5：Packaging body is provided, the chip and fluorescence diaphragm are packaged；The packaging body around the chip and fluorescence diaphragm surrounding and with the either flush of fluorescence diaphragm；Step 6：Cut out LED encapsulation particles；Edge of the edge of the ceramic substrate after cutting more than corresponding fluorescence diaphragm.Chip-scale LED packaging technologies of the invention are by way of fluorescence membrane covered chip, it is to avoid carry out fluorescent material mixed processing to whole packaging body, improve the optical property of LED encapsulation structure.
Description
Technical field
The present invention relates to a kind of semiconductor package, more particularly to a kind of chip-scale LED packaging technologies.
Background technology
Compared to traditional light emitting source, light emitting diode (Light Emitting Diode, LED) has lightweight, body
The advantages of small, energy-conserving and environment-protective of product, luminous efficiency high, it extensively should more and more as a kind of new light emitting source
For indicating, showing, decorate, the field such as backlight, general lighting and urban landscape.
Existing emitting led encapsulating structure generally mixes packing colloid with fluorescent material, and then chip and wire are carried out
Encapsulation.However, because packing colloid volume is larger, if be all packaged using the colloid for being mixed with fluorescent material, being easily caused
Waste fluorescent material and cause fluorescent material skewness, easily occur light extraction it is uneven situations such as, lead yields low.
The content of the invention
Based on this, present invention offer is a kind of to make simple, yields chip-scale LED packaging technologies high.
In order to realize the purpose of the present invention, the present invention uses following technical scheme：
A kind of chip-scale LED packaging technologies, comprise the following steps：
Step one a, there is provided ceramic substrate；
Step 2：Some chips are provided, uniform intervals are placed on ceramic substrate；
Step 3：A fluorescence diaphragm is provided, covering is on the chip；
Step 4：The fluorescence diaphragm is cut, some spaced fluorescence diaphragms, each fluorescence diaphragm are divided into
Corresponded with chip；Appearance and size of the appearance and size of each fluorescence diaphragm more than the chip；
Step 5：Packaging body is provided, the chip and fluorescence diaphragm are packaged；The packaging body is around the chip
And fluorescence diaphragm surrounding and with the either flush of fluorescence diaphragm；
Step 6：Cut out LED encapsulation particles；Side of the edge of the ceramic substrate after cutting more than corresponding fluorescence diaphragm
Edge.
Wherein in one embodiment, in the step 3, the fluorescence diaphragm is prefabricated fluorescence diaphragm.
Wherein in one embodiment, the preparation method of the fluorescence diaphragm is：Fluorescent material and binding agent are sufficiently mixed
Uniformly, film is painted inside mould, is then heating and curing at 170 ° -220 ° of temperature.
Wherein in one embodiment, the preparation method of the fluorescence diaphragm is：First distinguish impregnation, adjust fluorescent material；Then
Being alternately stacked as one layer of glued membrane of carrier layer of fluorescent powder using steel plate or glass needs thickness；It is last 170 ° of temperature-
It is heating and curing under 220 ° and draws required fluorescence diaphragm.
Wherein in one embodiment, the thickness of the fluorescence diaphragm is 0.09~0.45mm.
A kind of chip-scale LED packaging technologies, comprise the following steps：
Step one a, there is provided ceramic substrate；The ceramic substrate is one size of LED encapsulation structure of default making；
Step 2：A chip is provided to be placed on ceramic substrate；
Step 3：A fluorescence diaphragm is provided, covering is on the chip；
Step 4：The fluorescence diaphragm is cut, the fluorescence diaphragm of pre-set dimension, the profile of the fluorescence diaphragm is drawn
Appearance and size of the size more than the chip and the appearance and size less than the ceramic substrate；
Step 5：Packaging body is provided, the chip and fluorescence diaphragm are packaged；The packaging body is around the chip
And fluorescence diaphragm surrounding and with the either flush of fluorescence diaphragm.
Wherein in one embodiment, in the step 3, the fluorescence diaphragm is prefabricated fluorescence diaphragm.
Wherein in one embodiment, the preparation method of the fluorescence diaphragm is：Fluorescent material and binding agent are sufficiently mixed
Uniformly, film is painted inside mould, is then heating and curing at 170 ° -220 ° of temperature.
Wherein in one embodiment, the preparation method of the fluorescence diaphragm is：First distinguish impregnation, adjust fluorescent material；Then
Being alternately stacked as one layer of glued membrane of carrier layer of fluorescent powder using steel plate or glass needs thickness；It is last 170 ° of temperature-
It is heating and curing under 220 ° and draws required fluorescence diaphragm.
Wherein in one embodiment, the thickness of the fluorescence diaphragm is 0.09~0.45mm.
Chip-scale LED packaging technologies of the invention are by way of fluorescence membrane covered chip, it is to avoid to whole encapsulation
Body carries out fluorescent material mixed processing, and fluorescence diaphragm is fabricated separately the quality that can be effectively guaranteed fluorescence diaphragm, improves
The optical property of LED encapsulation structure.
Brief description of the drawings
The section view of the ceramic substrate of the step of Fig. 1 is the chip-scale LED packaging technologies of a preferred embodiment of the invention
Structural representation.
Sectional structure after the ceramic substrate chip placement of the step of Fig. 2 is chip-scale LED packaging technologies of the invention two
Schematic diagram.
Fluorescence diaphragm is placed on the ceramic substrate and chip of the step of Fig. 3 is chip-scale LED packaging technologies of the invention three
Cross section structure diagram.
The cross section structure diagram of the step of Fig. 4 is chip-scale LED packaging technologies of the invention four.
Fig. 5 is the cross section structure diagram of the LED encapsulation structure of step 5 of the invention.
Specific embodiment
For the ease of understanding the present invention, the present invention will be described more fully below.But, the present invention can be with perhaps
More different form is realized, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is to make
Understanding to the disclosure is more thorough comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article with belong to technical field of the invention
The implication that technical staff is generally understood that is identical.The term for being used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Fig. 1 to Fig. 5 is referred to, is the chip-scale LED packaging technologies of a better embodiment of the invention, including following step
Suddenly：
Step one a, there is provided ceramic substrate 10；The ceramic substrate 10 is large area ceramic substrate, makes many for disposable
Individual LED encapsulation structure；
Step 2：Some chips 20 are provided, uniform intervals are placed on ceramic substrate 10；In the present embodiment, the core
The rectangular setting of piece 20；
Step 3：One fluorescence diaphragm 30a is provided, is covered on the chip 20；The thickness of fluorescence diaphragm 30a be 0.09~
0.45mm；
Step 4：The fluorescence diaphragm 30a is cut, some spaced fluorescence diaphragms 30 are divided into, it is each glimmering
Light diaphragm 30 is corresponded with chip 20；The appearance and size of each fluorescence diaphragm 30 is more than the appearance and size of the chip 20, i.e., glimmering
Each edge of light diaphragm 30 is beyond the edge of chip 20；
Step 5：Packaging body 40 is provided, the chip 20 and fluorescence diaphragm 30 are packaged；Specifically, the encapsulation
Body 40 around the chip 20 and fluorescence diaphragm 30 surrounding and with the either flush of fluorescence diaphragm 30；
Step 6：Cut out LED encapsulation particles；The structure that encapsulation is completed in step 5 is cut according to default size
Cut, the edge of the edge more than corresponding fluorescence diaphragm 30 of the ceramic substrate 10 after cutting.
In above-mentioned steps three, the fluorescence diaphragm 30a is prefabricated fluorescence diaphragm, and one of which preparation method is：Will
Fluorescent material and binding agent are sufficiently mixed uniformly, and film is painted inside mould, are then heating and curing at 170 ° -220 ° of temperature；
Another preparation method is：First distinguish impregnation, adjust fluorescent material；Then using steel plate or glass as one layer of carrier layer of fluorescent powder
Glued membrane is alternately stacked needs thickness；Last being heating and curing at 170 ° -220 ° of temperature draws required fluorescence diaphragm 30a；
The fluorescence diaphragm 30a that second method is made, can cause that fluorescence diaphragm 30a is uniformly distributed, and be not in the feelings of localized clusters
Condition, greatly increases the uniformity of light extraction.
It is to be appreciated that said chip level LED packaging technologies are directed to the situation of multiple LED encapsulation structures of producing once；
In other embodiments, when a LED encapsulation structure is fabricated separately, chip-scale LED packaging technologies are comprised the following steps：
Step one a, there is provided ceramic substrate 10；The ceramic substrate 10 makes a size for LED encapsulation structure for default；
Step 2：A chip 20 is provided to be placed on ceramic substrate 10；In the present embodiment, the chip 20 is rectangular sets
Put；
Step 3：One fluorescence diaphragm 30a is provided, is covered on the chip 20；The thickness of fluorescence diaphragm 30a be 0.09~
0.45mm；
Step 4：The fluorescence diaphragm 30a is cut, the fluorescence diaphragm 30 of pre-set dimension is drawn, the fluorescence diaphragm
Appearance and size of 30 appearance and size more than the chip 20 and the appearance and size less than the ceramic substrate 10, i.e. fluorescence diaphragm
30 each edge is less than the edge of ceramic substrate 10 beyond the edge of chip 20；
Step 5：Packaging body 40 is provided, the chip 20 and fluorescence diaphragm 30 are packaged；Specifically, the encapsulation
Body 40 around the chip 20 and fluorescence diaphragm 30 surrounding and with the either flush of fluorescence diaphragm 30.
Furthermore it is possible to understand ground, the conductive pole of the electrode of correspondence chip 20 can be provided with the ceramic substrate 10.
Chip-scale LED packaging technologies of the invention are by way of fluorescence membrane covered chip, it is to avoid to whole encapsulation
Body carries out fluorescent material mixed processing, and fluorescence diaphragm is fabricated separately the quality that can be effectively guaranteed fluorescence diaphragm 30, improves
The optical property of LED encapsulation structure.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Shield scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of chip-scale LED packaging technologies, it is characterised in that comprise the following steps：
Step one a, there is provided ceramic substrate；
Step 2：Some chips are provided, uniform intervals are placed on ceramic substrate；
Step 3：A fluorescence diaphragm is provided, covering is on the chip；
Step 4：The fluorescence diaphragm is cut, some spaced fluorescence diaphragms, each fluorescence diaphragm and core is divided into
Piece is corresponded；Appearance and size of the appearance and size of each fluorescence diaphragm more than the chip；
Step 5：Packaging body is provided, the chip and fluorescence diaphragm are packaged；The packaging body is around the chip and glimmering
The surrounding of light diaphragm and with the either flush of fluorescence diaphragm；
Step 6：Cut out LED encapsulation particles；Edge of the edge of the ceramic substrate after cutting more than corresponding fluorescence diaphragm.
2. chip-scale LED packaging technologies according to claim 1, it is characterised in that：In the step 3, the fluorescent film
Piece is prefabricated fluorescence diaphragm.
3. chip-scale LED packaging technologies according to claim 2, it is characterised in that：The preparation method of the fluorescence diaphragm
For：Fluorescent material and binding agent are sufficiently mixed uniformly, film is painted inside mould, then heated at 170 ° -220 ° of temperature
Solidification.
4. chip-scale LED packaging technologies according to claim 2, it is characterised in that：The preparation method of the fluorescence diaphragm
For：First distinguish impregnation, adjust fluorescent material；Then it is alternately stacked as one layer of glued membrane of carrier layer of fluorescent powder using steel plate or glass
To needing thickness；Last being heating and curing at 170 ° -220 ° of temperature draws required fluorescence diaphragm.
5. chip-scale LED packaging technologies according to claim 1, it is characterised in that：The thickness of the fluorescence diaphragm is
0.09~0.45mm.
6. a kind of chip-scale LED packaging technologies, it is characterised in that comprise the following steps：
Step one a, there is provided ceramic substrate；The ceramic substrate is one size of LED encapsulation structure of default making；
Step 2：A chip is provided to be placed on ceramic substrate；
Step 3：A fluorescence diaphragm is provided, covering is on the chip；
Step 4：The fluorescence diaphragm is cut, the fluorescence diaphragm of pre-set dimension, the appearance and size of the fluorescence diaphragm is drawn
Appearance and size more than the chip and the appearance and size less than the ceramic substrate；
Step 5：Packaging body is provided, the chip and fluorescence diaphragm are packaged；The packaging body is around the chip and glimmering
The surrounding of light diaphragm and with the either flush of fluorescence diaphragm.
7. chip-scale LED packaging technologies according to claim 6, it is characterised in that：In the step 3, the fluorescent film
Piece is prefabricated fluorescence diaphragm.
8. chip-scale LED packaging technologies according to claim 7, it is characterised in that：The preparation method of the fluorescence diaphragm
For：Fluorescent material and binding agent are sufficiently mixed uniformly, film is painted inside mould, then heated at 170 ° -220 ° of temperature
Solidification.
9. chip-scale LED packaging technologies according to claim 7, it is characterised in that：The preparation method of the fluorescence diaphragm
For：First distinguish impregnation, adjust fluorescent material；Then it is alternately stacked as one layer of glued membrane of carrier layer of fluorescent powder using steel plate or glass
To needing thickness；Last being heating and curing at 170 ° -220 ° of temperature draws required fluorescence diaphragm.
10. chip-scale LED packaging technologies according to claim 6, it is characterised in that：The thickness of the fluorescence diaphragm is
0.09~0.45mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611265322.4A CN106876551A (en) | 2016-12-30 | 2016-12-30 | Chip-scale LED packaging technologies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611265322.4A CN106876551A (en) | 2016-12-30 | 2016-12-30 | Chip-scale LED packaging technologies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106876551A true CN106876551A (en) | 2017-06-20 |
Family
ID=59165200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611265322.4A Pending CN106876551A (en) | 2016-12-30 | 2016-12-30 | Chip-scale LED packaging technologies |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106876551A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638003A (en) * | 2017-10-09 | 2019-04-16 | 晶能光电（江西）有限公司 | The preparation method of LED headlamp based on CSP white chip |
| CN110246935A (en) * | 2019-06-14 | 2019-09-17 | 东莞中之光电股份有限公司 | A kind of LED encapsulation method and LED |
| CN111640844A (en) * | 2020-06-17 | 2020-09-08 | 鸿利智汇集团股份有限公司 | Composite fluorescent film and LED packaging process |
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| CN101740707A (en) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| CN102906887A (en) * | 2010-04-30 | 2013-01-30 | 皇家飞利浦电子股份有限公司 | LED wafer with laminated phosphor layer |
| CN103635524A (en) * | 2011-07-05 | 2014-03-12 | 迪睿合电子材料有限公司 | Resin composition for forming fluorescent sheet |
| CN204632804U (en) * | 2015-05-29 | 2015-09-09 | 广州市鸿利光电股份有限公司 | Wafer-level package LED |
| CN105845809A (en) * | 2015-02-04 | 2016-08-10 | 亿光电子工业股份有限公司 | LED Packaging Structure And Method For Manufacturing The Same |
| CN105895781A (en) * | 2016-06-02 | 2016-08-24 | 深圳市晶瓷光电有限公司 | Package structure and package method of blue-light LED flip chip |
| CN106030835A (en) * | 2014-05-21 | 2016-10-12 | 日本电气硝子株式会社 | Wavelength conversion member and light emitting device using same |
-
2016
- 2016-12-30 CN CN201611265322.4A patent/CN106876551A/en active Pending
Patent Citations (7)
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| CN101740707A (en) * | 2009-12-11 | 2010-06-16 | 晶科电子（广州）有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
| CN102906887A (en) * | 2010-04-30 | 2013-01-30 | 皇家飞利浦电子股份有限公司 | LED wafer with laminated phosphor layer |
| CN103635524A (en) * | 2011-07-05 | 2014-03-12 | 迪睿合电子材料有限公司 | Resin composition for forming fluorescent sheet |
| CN106030835A (en) * | 2014-05-21 | 2016-10-12 | 日本电气硝子株式会社 | Wavelength conversion member and light emitting device using same |
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| CN204632804U (en) * | 2015-05-29 | 2015-09-09 | 广州市鸿利光电股份有限公司 | Wafer-level package LED |
| CN105895781A (en) * | 2016-06-02 | 2016-08-24 | 深圳市晶瓷光电有限公司 | Package structure and package method of blue-light LED flip chip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109638003A (en) * | 2017-10-09 | 2019-04-16 | 晶能光电（江西）有限公司 | The preparation method of LED headlamp based on CSP white chip |
| CN110246935A (en) * | 2019-06-14 | 2019-09-17 | 东莞中之光电股份有限公司 | A kind of LED encapsulation method and LED |
| CN110246935B (en) * | 2019-06-14 | 2020-07-14 | 东莞中之光电股份有限公司 | L ED packaging method |
| CN111640844A (en) * | 2020-06-17 | 2020-09-08 | 鸿利智汇集团股份有限公司 | Composite fluorescent film and LED packaging process |
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Application publication date: 20170620 |
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