CN111341897A - LED packaging structure, manufacturing method thereof and LED flash lamp - Google Patents

LED packaging structure, manufacturing method thereof and LED flash lamp Download PDF

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Publication number
CN111341897A
CN111341897A CN201811555081.6A CN201811555081A CN111341897A CN 111341897 A CN111341897 A CN 111341897A CN 201811555081 A CN201811555081 A CN 201811555081A CN 111341897 A CN111341897 A CN 111341897A
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China
Prior art keywords
glue
led
flip
chip
packaging structure
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CN201811555081.6A
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Chinese (zh)
Inventor
何刚
邢美正
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Shenzhen Jufei Optoelectronics Co Ltd
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Shenzhen Jufei Optoelectronics Co Ltd
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Priority to CN201811555081.6A priority Critical patent/CN111341897A/en
Publication of CN111341897A publication Critical patent/CN111341897A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses an LED packaging structure, a manufacturing method thereof and an LED flash lamp. The manufacturing method of the LED packaging structure comprises the following steps: s10, mounting a flip-chip LED chip on the ceramic substrate; s20, covering fluorescent glue on the top surface and the peripheral side surface of the flip LED chip to form a fluorescent glue layer; s30, covering white glue on the ceramic substrate in the region where the flip-chip LED chip is not installed; s40, preparing light-transmitting glue, and integrally covering the light-transmitting glue on the top surface of the fluorescent glue layer and the top surface of the white glue on the top surface of the flip LED chip; the preparation method of the light-transmitting adhesive comprises the following steps: grinding 0.5-5% of titanium dioxide in the balance of silica gel, and uniformly mixing. According to the manufacturing method of the LED packaging structure, the prepared LED packaging structure is good in light color and uniform in light emitting.

Description

LED packaging structure, manufacturing method thereof and LED flash lamp
Technical Field
The invention relates to the technical field of semiconductor packaging structures, in particular to an LED packaging structure, a manufacturing method thereof and an LED flash lamp.
Background
Compared with the traditional Light source, the Light Emitting Diode (LED) has the advantages of Light weight, small volume, energy saving, environmental protection, high Light Emitting efficiency and the like, and as a novel Light source, the LED has been increasingly and widely applied to the fields of indication, display, decoration, backlight, general illumination, urban night scenery and the like.
The existing light emitting LED package structure generally includes electrodes, wires, and then is packaged. Because the lead and the electrode are welded firstly and then the colloid packaging is carried out, the conditions of poor lead welding and poor light transmission of a packaging layer are easy to occur; although some current packaging structures solve the problem, the problems of uneven light emission and poor light color exist.
Disclosure of Invention
Therefore, the present invention is needed to provide a method for manufacturing an LED package structure with good light color and uniform light emission.
The invention also provides an LED packaging structure and an LED flash lamp.
In order to realize the purpose of the invention, the invention adopts the following technical scheme:
a manufacturing method of an LED packaging structure comprises the following steps:
s10, mounting a flip LED chip on the ceramic substrate, and enabling the bottom surface of the flip LED chip to be in contact with the top surface of the ceramic substrate, wherein the electrodes of the flip LED chip are correspondingly and electrically connected with the electrodes of the ceramic substrate;
s20, covering fluorescent glue on the top surface and the peripheral side surface of the flip LED chip to form a fluorescent glue layer;
s30, covering white glue on the ceramic substrate in the area where the flip LED chip is not installed, so that the side face of the white glue is abutted against the peripheral side face of the fluorescent glue layer on the peripheral side face of the flip LED chip;
s40, preparing light-transmitting glue, and integrally covering the light-transmitting glue on the top surface of the fluorescent glue layer and the top surface of the white glue on the top surface of the flip LED chip;
the preparation method of the light-transmitting adhesive comprises the following steps: grinding 0.5-5% of titanium dioxide in the balance of silica gel, and uniformly mixing.
According to the manufacturing method of the LED packaging structure, after the LED chip is installed, fluorescent glue is coated on the surface of the LED chip and the surface of the ceramic substrate, then white glue is injected, and then transparent silica gel with titanium dioxide is injected, wherein the thickness of the fluorescent glue on the top of the LED chip is larger than that of the fluorescent glue on the ceramic substrate, so that compared with the existing LED packaging structure, the prepared LED packaging structure is better in light emitting color and more uniform in light emitting, and can reduce light interference to the maximum extent; titanium white powder passes through grinding equipment and mixes in silica gel, and its degree of mixing with silica gel is better, avoids appearing the inhomogeneous phenomenon of titanium powder for transparent silica gel's light-emitting effect is better.
In some embodiments, the step S20 further includes: covering the fluorescent glue on the ceramic substrate in the region where the flip-chip LED chip is not mounted, wherein the step S30 specifically includes: and covering white glue on the top surface of the fluorescent glue layer on the ceramic substrate so that the side surface of the white glue is abutted to the peripheral side surface of the fluorescent glue layer on the peripheral side surface of the flip-chip LED chip. Fluorescent glue is coated on the surface of the ceramic substrate, so that the obtained colored light is less in interference and better in effect.
In some embodiments, the method for covering the fluorescent glue in step S30 is: the liquid fluorescent glue is prefabricated into fluorescent glue which is then directly covered.
In some embodiments, the method for covering the fluorescent glue in step S30 is: and directly spraying the liquid fluorescent glue, and then curing to form the fluorescent glue layer.
In some embodiments, the method for covering the light-transmitting glue in step S40 is: the liquid transparent adhesive is prefabricated into a transparent adhesive layer and then directly covered.
In some embodiments, the method for covering the light-transmissive adhesive layer in step S40 includes: and directly spraying the liquid light-transmitting glue, and then curing to form the light-transmitting glue layer.
In some embodiments, the step S40 specifically includes: and spraying transparent glue on the top surfaces of the fluorescent glue and the white glue on the top surfaces of the flip LED chips to form a transparent glue layer.
In some embodiments, after the step of S40, there is the following step of S41: when the ceramic substrate is provided with a plurality of inverted LED chips at intervals, the transparent silica gel, the white glue, the fluorescent glue and the ceramic substrate are sequentially cut from the top surface to the bottom to form a plurality of LED packaging structures.
The invention also provides an LED packaging structure which is manufactured by the manufacturing method of the LED packaging structure.
The invention also provides an LED flash lamp which comprises the LED packaging structure.
Drawings
Fig. 1 is a schematic structural diagram of a step of a method for manufacturing an LED package structure according to an embodiment of the present invention;
FIG. 2 is a schematic side view of the steps of the method of fabricating the LED package structure of FIG. 1;
fig. 3 is a schematic structural diagram of a step of a method for manufacturing an LED package structure according to an embodiment of the present invention;
FIG. 4 is a schematic side view of the steps of the method of fabricating the LED package structure of FIG. 3;
fig. 5 is a schematic structural diagram of a step of a method for manufacturing an LED package structure according to an embodiment of the present invention;
FIG. 6 is a schematic side view of the steps of the method of fabricating the LED package structure of FIG. 5;
fig. 7 is a schematic structural diagram illustrating a step of a method for fabricating an LED package structure according to an embodiment of the present invention;
fig. 8 is a cross-sectional view of the LED package structure manufactured by the method of manufacturing the LED package structure of fig. 7.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Referring to fig. 1 to 8, the present invention provides a method for manufacturing an LED package structure, which includes the following steps:
s10, referring to fig. 1 and 2, the flip-chip LED chip 20 is mounted on the ceramic substrate 10, and the bottom surface of the flip-chip LED chip 20 is in contact with the top surface of the ceramic substrate 10, and the electrodes of the flip-chip LED chip 20 are electrically connected to the electrodes of the ceramic substrate 10. Specifically, the flip-chip LED chip 20 has a positive electrode and a negative electrode, the ceramic substrate 10 has a positive electrode and a negative electrode, conductive paste is uniformly coated on the positive electrode and the negative electrode of the ceramic substrate 10, the positive electrode of the flip-chip LED chip 20 is connected to the positive electrode of the ceramic substrate 10, the negative electrode of the flip-chip LED chip 20 is connected to the negative electrode of the ceramic substrate 10, and then the ceramic substrate 10 on which the flip-chip LED chip 20 is mounted is subjected to reflow soldering. Preferably, the flip-chip LED chip 20 is a blue chip.
S20, referring to fig. 3 and 4, preparing a fluorescent glue, covering the fluorescent glue on the top surface and the peripheral side surface of the flip-chip LED chip 20 to form a fluorescent glue layer 30; the preparation method of the fluorescent glue comprises the following steps: mixing and stirring uniformly 20-40% of silica gel, 30-60% of fluorescent powder and the balance of catechol to form the fluorescent glue. The method for covering the fluorescent glue comprises the following steps: the liquid fluorescent glue is prefabricated into a fluorescent glue layer and then directly covered, or the fluorescent glue is directly sprayed and then cured to form the fluorescent glue layer 30. For example, spraying fluorescent glue, baking at 100-150 deg.C, and curing to form the fluorescent glue layer 30.
S30, referring to fig. 5 and 6, the ceramic substrate 10 is covered with white glue in the area where the flip-chip LED chip 20 is not mounted, so that the side surface of the white glue is in contact with the peripheral side surface of the fluorescent glue layer 30 on the peripheral side surface of the flip-chip LED chip 20. The white glue is uniformly mixed in a glue injection machine, is uniformly injected on the ceramic substrate 10 through the glue injection machine, and is baked and cured in an oven at the temperature of 100-150 ℃.
S40, preparing a light-transmitting glue, and integrally covering the light-transmitting glue on the top surface of the fluorescent glue layer and the top surface of the white glue on the top surface of the flip-chip LED chip 20. The method for covering the light-transmitting glue comprises the following steps: the liquid transparent glue is prefabricated into a transparent glue layer and then directly covered, or the liquid transparent glue is directly sprayed and then cured to form the transparent glue layer, for example, the transparent glue is placed in a glue injection pipe of a molding press, transparent silica gel is injected on the top surface of the fluorescent glue layer and the top surface of the white glue on the top surface of the flip-chip LED chip 20 through the molding press, and the transparent silica gel is baked and cured in an oven at 100-150 ℃.
The method for preparing the light-transmitting adhesive comprises the following steps: and grinding 0.5-5% by mass of titanium dioxide into the balance of silica gel by using grinding equipment to form the transparent adhesive.
After the step of S40, there is a step of S41: when a plurality of flip-chip LED chips 20 are mounted on the ceramic substrate 10 at intervals, the transparent adhesive layer, the white adhesive layer, the fluorescent adhesive layer and the ceramic substrate are sequentially cut from the top surface to the bottom, so as to form a plurality of LED package structures.
Further, step S20 further includes: based on covering the ceramic substrate 10 with the fluorescent glue in the region where the flip-chip LED chip 20 is not mounted, the step S30 specifically includes: the top surface of the phosphor layer 30 on the ceramic substrate 10 is covered with white glue so that the side surface of the white glue abuts against the peripheral side surface of the phosphor layer 30 on the peripheral side surface of the flip-chip LED chip 20. That is, the first phosphor layer 31 is formed on the top surface of the flip LED chip 20, the second phosphor layer 32 is formed on the peripheral surface of the flip LED chip 20, and the third phosphor layer 33 is formed on the ceramic substrate 10 in a region where the flip LED chip is not mounted. Wherein the thickness of the first phosphor layer 31 is greater than the thickness of the third phosphor layer 33. Therefore, the fluorescent glue layer is not wasted, the effect of uniform light emission can be achieved, and the interference of light can be reduced to the maximum extent. The white glue covers the third fluorescent glue layer 33.
After the flip-chip LED chip 20 is mounted on the ceramic substrate 10, deionized water, a surfactant and isopropyl alcohol may be mixed into a cleaning agent to clean the ceramic substrate 10, and then the excess solder and impurities on the ceramic substrate 10 are removed. The cleaning agent can comprise the following components in parts by weight: 60% -80% of deionized water, 10% -20% of surfactant and 10% -20% of isopropanol.
Then S10 may be followed by S11 step: a zener diode is mounted on the ceramic substrate 10. The cleaning agent can comprise the following components in parts by weight: 60% -80% of deionized water, 10% -20% of surfactant and 10% -20% of isopropanol.
After the step of S40, there is a step of S41: when a plurality of flip-chip LED chips 20 are mounted on the ceramic substrate 10 at intervals, the transparent adhesive layer, the white adhesive layer, the fluorescent adhesive layer and the ceramic substrate are sequentially cut from the top surface to the bottom, so as to form a plurality of LED package structures.
Referring to fig. 8, the LED package structure 100 obtained by the above-mentioned method for manufacturing an LED package structure includes a ceramic substrate 10, a flip-chip LED chip 20, a fluorescent glue layer 30, a white glue wall 40, and a light-transmitting glue layer 50.
The top surface of the ceramic substrate 10 forms a mounting surface.
The flip-chip LED chip 20 is flipped on the mounting surface of the ceramic substrate 10, and the bottom surface of the flip-chip LED chip 20 is in contact with the mounting surface of the ceramic substrate 10; the flip-chip LED chip 20 has a peripheral side surface and a top surface for connection with other components.
The shape of the flip-chip LED chip 20 can be selected as required, and in this embodiment, the flip-chip LED chip 20 is rectangular. The flip-chip LED chip 20 is fixedly mounted on one surface of the ceramic substrate 10, the flip-chip LED chip 20 has a positive electrode and a negative electrode, the ceramic substrate 10 has a positive electrode and a negative electrode, the positive electrode of the flip-chip LED chip 20 is connected to the positive electrode of the ceramic substrate 10, and the negative electrode of the flip-chip LED chip 20 is connected to the negative electrode of the ceramic substrate 10.
The fluorescent adhesive layer 30 surrounds the peripheral side surface of the flip-chip LED chip 20 and covers the top surface of the flip-chip LED chip 20, and the fluorescent adhesive layer 30 has the peripheral side surface and an upper top surface.
The white glue wall 40 surrounds the peripheral side surface of the fluorescent glue layer 30 and covers the area of the mounting surface of the ceramic substrate 10 where the flip-chip LED chip 20 is not mounted, and the white glue wall 40 has a top surface. The white glue wall 40 is formed by injecting glue into transparent silica gel and then curing, and can play a role in reflecting light, so that light is gathered in the middle, and light scattering is reduced.
In order to save materials and make the appearance of the LED package structure 100 more delicate, the peripheral side of the white adhesive wall 40 is flush with the peripheral side of the fluorescent adhesive layer 30. Specifically, when the white glue is coated, it is better to ensure that the white glue is correspondingly flush with the peripheral side of the fluorescent glue layer 30; if the white glue is protruded, the white glue is cut off after the curing of the white glue is finished.
The light-transmitting adhesive layer 50 covers the top surface of the white adhesive wall 40 and the upper top surface of the fluorescent adhesive layer 30. The thickness of the light-transmissive glue layer 50 is, for example, 100 μm to 130 μm, such as 100 μm, 110 μm, 125 μm, 130 μm, and the like. The light-transmitting adhesive layer 50 is formed by injecting transparent silica gel and then curing, and can play a role in reflecting light, so that light is gathered in the middle, and light scattering is reduced.
Further, the phosphor layer 30 also covers a region of the mounting surface of the ceramic substrate 10 where the flip-chip LED chip 20 is not mounted, so that the phosphor layer 30 has a lower top surface extending outward from the bottom of the peripheral side surface of the phosphor layer 30, and the white wall 40 covers the lower top surface of the phosphor layer 30.
The thickness of the fluorescent glue layer 30 covering the top surface of the flip-chip LED chip 20 is greater than the thickness of the area of the fluorescent glue layer 30 covering the ceramic substrate 10.
That is, the fluorescent glue layer 30 includes a first fluorescent glue layer 31, a second fluorescent glue layer 32 and a third fluorescent glue layer 33, the first fluorescent glue layer 31 covers the top of the flip-chip LED chip 20, the second fluorescent glue layer 32 covers the peripheral side of the flip-chip LED chip 20, the third fluorescent glue layer 33 covers the area of the ceramic substrate 10 where the flip-chip LED chip 20 is not mounted, the second fluorescent glue layer 32 is arranged around the white glue wall 40 and the peripheral side of the flip-chip LED chip 20, and the transparent glue layer 50 covers the top of the first fluorescent glue layer 31 and the white glue wall 40 at the top of the flip-chip LED chip 20. The fluorescent glue layer is also arranged on the ceramic substrate, so that the fluorescent glue layer is not wasted, the effect of uniform light emission can be achieved, and the light interference can be reduced to the maximum extent. For example, the thickness of the first phosphor layer 31 on top of the flip-chip LED chip 20 is 25 μm to 50 μm, such as 25 μm, 30 μm, 40 μm, 50 μm, and the like. The thickness of the second fluorescent glue layer 32 on the periphery of the side surface of the flip-chip LED chip 20 is 15-30 μm, such as 15 μm, 20 μm, 25 μm, 30 μm, etc.; the thickness of the third phosphor layer 33 on the ceramic substrate 10 is 10 to 25 μm, for example, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, 25 μm, etc.
The fluorescent adhesive layer 30, the flip-chip LED chip 20 and the ceramic substrate 10 can be connected by means of pasting, spraying, etc., for example, the fluorescent adhesive layer 30 can be prepared in advance as a fluorescent adhesive layer, and then the fluorescent adhesive layer is covered on the top, the peripheral side and the ceramic substrate 10 of the flip-chip LED chip 20 by means of pasting.
The fluorescent glue layer 30 is rectangular and is consistent with the shape of the flip-chip LED chip 20. The fluorescent glue layer 30 may be a preformed fluorescent glue film, or may be formed by introducing the fluorescent glue through glue injection and then curing the introduced fluorescent glue.
The invention also protects the LED packaging structure prepared by the manufacturing method of the LED packaging structure.
The invention also protects the LED flash lamp, which comprises the LED packaging structure.
The manufacturing method of the present invention will be further illustrated by the following examples.
Example one
In the embodiment, the fluorescent glue comprises the following components in parts by weight: 30% of silica gel, 50% of fluorescent powder and the balance of catechol by mass; the light-transmitting glue comprises the following components in parts by weight: 3% of titanium dioxide and 97% of silica gel.
Example two
In the embodiment, the fluorescent glue comprises the following components in parts by weight: 40% of silica gel, 35% of fluorescent powder and the balance of catechol by mass; the light-transmitting glue comprises the following components in parts by weight: 5% by mass of titanium dioxide and 95% by mass of silica gel.
EXAMPLE III
In the embodiment, the fluorescent glue comprises the following components in parts by weight: 25% of silica gel, 60% of fluorescent powder and the balance of catechol by mass; the light-transmitting glue comprises the following components in parts by weight: 0.5 percent of titanium dioxide and 99.5 percent of silica gel.
Example four
In the embodiment, the fluorescent glue comprises the following components in parts by weight: 20% of silica gel, 60% of fluorescent powder and the balance of catechol by mass; the light-transmitting glue comprises the following components in parts by weight: 4% of titanium dioxide and 96% of silica gel.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A manufacturing method of an LED packaging structure is characterized by comprising the following steps:
s10, mounting a flip LED chip on the ceramic substrate, and enabling the bottom surface of the flip LED chip to be in contact with the top surface of the ceramic substrate, wherein the electrodes of the flip LED chip are correspondingly and electrically connected with the electrodes of the ceramic substrate;
s20, covering fluorescent glue on the top surface and the peripheral side surface of the flip LED chip to form a fluorescent glue layer;
s30, covering white glue on the ceramic substrate in the area where the flip LED chip is not installed, so that the side face of the white glue is abutted against the peripheral side face of the fluorescent glue layer on the peripheral side face of the flip LED chip;
s40, preparing light-transmitting glue, and integrally covering the light-transmitting glue on the top surface of the fluorescent glue layer and the top surface of the white glue on the top surface of the flip LED chip;
the preparation method of the light-transmitting adhesive comprises the following steps: grinding 0.5-5% of titanium dioxide in the balance of silica gel, and uniformly mixing.
2. The method for manufacturing the LED packaging structure according to claim 1, wherein: the step S20 further includes: covering the fluorescent glue on the ceramic substrate in the region where the flip-chip LED chip is not mounted, wherein the step S30 specifically includes: and covering white glue on the top surface of the fluorescent glue layer on the ceramic substrate so that the side surface of the white glue is abutted to the peripheral side surface of the fluorescent glue layer on the peripheral side surface of the flip-chip LED chip.
3. The method for manufacturing the LED packaging structure according to claim 1 or 2, wherein: the method for covering the fluorescent glue in the step S30 includes: the liquid fluorescent glue is prefabricated into fluorescent glue which is then directly covered.
4. The method for manufacturing the LED packaging structure according to claim 1 or 2, wherein: the method for covering the fluorescent glue in the step S30 includes: and directly spraying the liquid fluorescent glue, and then curing to form the fluorescent glue layer.
5. The method for manufacturing the LED packaging structure according to claim 1, wherein: the method for covering the light-transmitting adhesive in the step S40 includes: the liquid transparent adhesive is prefabricated into a transparent adhesive layer and then directly covered.
6. The method for manufacturing the LED packaging structure according to claim 1, wherein: the method for covering the light-transmitting adhesive layer in the step S40 includes: and directly spraying the liquid light-transmitting glue, and then curing to form the light-transmitting glue layer.
7. The method for manufacturing the LED packaging structure according to claim 1, wherein: the step S40 is specifically: and spraying transparent glue on the top surfaces of the fluorescent glue and the white glue on the top surfaces of the flip LED chips to form a transparent glue layer.
8. The method for manufacturing the LED packaging structure according to claim 1, wherein: after the step of S40, there is a step of S41: when the ceramic substrate is provided with a plurality of inverted LED chips at intervals, the transparent silica gel, the white glue, the fluorescent glue and the ceramic substrate are sequentially cut from the top surface to the bottom to form a plurality of LED packaging structures.
9. An LED packaging structure, its characterized in that: the LED packaging structure is manufactured by the manufacturing method of the LED packaging structure as claimed in any one of claims 1-8.
10. An LED flash comprising the LED package structure of claim 9.
CN201811555081.6A 2018-12-19 2018-12-19 LED packaging structure, manufacturing method thereof and LED flash lamp Pending CN111341897A (en)

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CN107546301A (en) * 2016-06-29 2018-01-05 江西省晶瑞光电有限公司 A kind of white glue, LED lamp bead and its method for packing
CN108615805A (en) * 2016-12-12 2018-10-02 晶能光电（江西）有限公司 A kind of wafer-level package white chip and its packaging method
CN206432289U (en) * 2016-12-30 2017-08-22 东莞中之光电股份有限公司 The emitting led encapsulating structure of one side

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* Cited by examiner, † Cited by third party
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CN111779993A (en) * 2020-07-06 2020-10-16 上海旭禾汽车电子科技有限公司 COB (chip on board) area light source and preparation method thereof
CN111933759A (en) * 2020-08-17 2020-11-13 上海旭择电子零件有限公司 Method for preparing surface light source COB by adopting two-color CSP chip and surface light source COB

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