CN104218141A - Packaging structure of inverted light-emitting diode (LED) chip - Google Patents
Packaging structure of inverted light-emitting diode (LED) chip Download PDFInfo
- Publication number
- CN104218141A CN104218141A CN201410471362.9A CN201410471362A CN104218141A CN 104218141 A CN104218141 A CN 104218141A CN 201410471362 A CN201410471362 A CN 201410471362A CN 104218141 A CN104218141 A CN 104218141A
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- CN
- China
- Prior art keywords
- substrate
- led chips
- flip led
- transparent sealing
- encapsulating structure
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention discloses a packaging structure of an inverted light-emitting diode (LED) chip. The packaging structure is characterized by comprising a substrate, the inverted LED chip fixed on the substrate, transparent sealing glue coating the inverted LED chip and fluorescence adhesive coating the substrate and the transparent sealing glue. According to the packaging structure, the inverted LED chip is connected to an electrode on the substrate, the layer of transparent sealing glue is added between the inverted LED chip and the fluorescence adhesive, the fluorescence adhesive is far away from the surface of the LED chip gathering high temperature, external quantum efficiency of the LED chip is improved, and the service life of the LED chip can also be prolonged.
Description
Technical field
The present invention relates to LED and manufacture field, relate to a kind of encapsulating structure of flip LED chips in particular.
Background technology
In current SMD encapsulating structure, adopt fluorescent glue to directly overlay wafer surface, the high temperature that LED chip long-term work produces can cause the large high attenuation of fluorescent material life-span, is the one of the main reasons that LED light source brightness reduces.Meanwhile, due to the direct cover wafers light-emitting area of fluorescent material, such that wafer lighting angle is little, fluorescent material is stimulated, and efficiency is lower.Meanwhile, the bowl cup-shaped support of SMD can make light in support inner total reflection, also have impact on external quantum efficiency and the rising angle of LED further.
Therefore how to provide a kind of encapsulating structure of flip LED chips, the useful life that the external quantum efficiency that can improve LED chip also can improve LED chip is the problem that those skilled in the art need solution badly.
Summary of the invention
In view of this, the invention provides the encapsulating structure that a kind of external quantum efficiency that can improve LED chip also can improve the flip LED chips in the useful life of LED chip.
For achieving the above object, the invention provides following technical scheme: a kind of encapsulating structure of flip LED chips, comprising:
Substrate; Be fixed on the flip LED chips on described substrate; Be coated in the transparent sealing on described flip LED chips; Be coated in the fluorescent glue in described substrate and described transparent sealing.Wherein, further comprising the steps of:
A, crystal-bonding adhesive is coated on the electrode of described substrate;
B, described flip LED chips to be used crystal-bonding adhesive fixing on the substrate and fix through high temperature;
C, with screen printing mode, transparent sealing to be covered on described flip LED chips, and complete coated described flip LED chips, the demoulding after baking-curing.
D, with the described fluorescent glue after the process of planetary vacuum defoamation mixer through silk screen printing on described substrate and described transparent sealing, through baking-curing.
E, by through baking after substrate cut be separated into less unit.
Preferably, in the encapsulating structure of above-mentioned a kind of flip LED chips, described substrate selects BT substrate, FR4 substrate, aluminium base, copper base or ceramic substrate.
Preferably, in the encapsulating structure of above-mentioned a kind of flip LED chips, the Electrode connection on described flip LED chips and described substrate.
Preferably, in the encapsulating structure of above-mentioned a kind of flip LED chips, silica gel, epoxy glue or silicon gum one is wherein selected in described transparent sealing, the size of described transparent sealing is minimum for covering flip LED chips upper surface, maximumly be no more than described substrate edges, and described transparent sealing is by print or the mode of some glue completes.
Preferably, in the encapsulating structure of above-mentioned a kind of flip LED chips, described fluorescent glue is the mixture of fluorescent material and silica gel or epoxy glue, and is coated on completely in described transparent sealing.
Present disclosure provides a kind of encapsulating structure of flip LED chips, by the electrode engagement on flip LED chips and substrate, layer of transparent sealing is increased between flip LED chips and fluorescent glue, make fluorescent glue away from the LED chip surface of assembling high temperature, thus the external quantum efficiency not only increasing LED chip also can improve the useful life of LED chip.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
Fig. 1 accompanying drawing is structural representation of the present invention.
In FIG:
1 be substrate, 2 be flip LED chips, 3 be transparent sealing, 4 for fluorescent glue
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the invention discloses the encapsulating structure that a kind of external quantum efficiency that can improve LED chip also can improve the flip LED chips in the useful life of LED chip.
Refer to accompanying drawing 1, be the structural representation of the encapsulating structure of a kind of flip LED chips disclosed by the invention, specifically comprise:
Substrate 1; Be fixed on the flip LED chips 2 on substrate 1; Be coated in the transparent sealing 3 on flip LED chips 2; Be coated in the fluorescent glue 4 in substrate 1 and transparent sealing 3.Wherein, further comprising the steps of:
A, crystal-bonding adhesive is coated on the electrode of substrate 1;
B, to be used by flip LED chips 2 crystal-bonding adhesive fixing on substrate 1 and fix through high temperature;
C, with screen printing mode, transparent sealing 3 to be covered on flip LED chips 2, and complete coated flip LED chips 2, the demoulding after baking-curing.
D, with the fluorescent glue 4 after the process of planetary vacuum defoamation mixer through silk screen printing on substrate 1 and transparent sealing 3, through baking-curing.
E, by the unit of substrate 1 cutting and separating Cheng Geng little after baking.
The present invention adopts the electrode engagement on flip LED chips and substrate, transparent sealing to be covered on flip LED chips and to be no more than substrate edges, fluorescent glue covers on transparent sealing and substrate, by increasing layer of transparent sealing between flip LED chips and fluorescent glue, make fluorescent glue away from the flip LED chips surface of assembling high temperature, the external quantum efficiency not only increasing flip LED chips also improves the useful life of LED chip.
In order to optimize technique scheme further, substrate 1 selects BT substrate, FR4 substrate, aluminium base, copper base or ceramic substrate, and these materials all have the advantage of thermal endurance, thermal conductivity, thus is conducive to the trouble free service of LED.
In order to optimize technique scheme further, its electrode of flip LED chips 2 below light-emitting area with the Electrode connection on substrate 1, not only can carry out downward heat loss through conduction better, also greatly improve the reliability of LED light source.
In order to optimize technique scheme further, silica gel, epoxy glue or silicon gum one is wherein selected in transparent sealing 3, has advantage that is high temperature resistant, good toughness.Use silk screen to be surrounded by the flip LED chips 2 fixed and carry out toasting and transparent sealing 3 is no more than substrate edges after printing transparent sealing 3, and transparent sealing 3 is by print or the mode of some glue completes.The use of transparent sealing 3 increases the rising angle of LED chip.
In order to optimize technique scheme further, fluorescent glue 4 is the mixture of fluorescent material and silica gel or epoxy glue, with model machine by fluorescent glue 4 evenly mold pressing and complete coated transparent sealing 3 and flip LED chips 2.Because the refractive index of fluorescent glue is different from transparent sealing refractive index, fluorescent glue 4 away from flip LED chips 2 surface of assembling high temperature, thus improves the useful life of fluorescent material.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.For device disclosed in embodiment, because it corresponds to the method disclosed in Example, so description is fairly simple, relevant part illustrates see method part.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. an encapsulating structure for flip LED chips, is characterized in that, comprising: substrate (1); Be fixed on the flip LED chips (2) on described substrate (1); Be coated in the transparent sealing (3) on described flip LED chips (2); Be coated in the fluorescent glue (4) in described substrate (1) and described transparent sealing (3).Wherein, further comprising the steps of:
A, crystal-bonding adhesive is coated on the electrode of described substrate (1);
B, to be used by described flip LED chips (2) crystal-bonding adhesive to be fixed on described substrate (1) upper and fix through high temperature;
C, with screen printing mode, transparent sealing (3) to be covered on described flip LED chips (2), and complete coated described flip LED chips (2), the demoulding after baking-curing;
D, with the described fluorescent glue (4) after the process of planetary vacuum defoamation mixer through silk screen printing on described substrate (1) and described transparent sealing (3), through baking-curing;
E, by the unit of substrate (1) cutting and separating Cheng Geng little after baking.
2. the encapsulating structure of a kind of flip LED chips according to claim 1, is characterized in that, described substrate (1) selects BT substrate, FR4 substrate, aluminium base, copper base or ceramic substrate.
3. the encapsulating structure of a kind of flip LED chips according to claim 1, is characterized in that, described flip LED chips (2) and the Electrode connection on described substrate (1).
4. the encapsulating structure of a kind of flip LED chips according to claim 1, is characterized in that, described transparent sealing (3) selects silica gel, epoxy glue or silicon gum one wherein.The size of described transparent sealing (3) is minimum for covering flip LED chips (2) upper surface, maximum described substrate (1) edge that is no more than, and described transparent sealing (3) is by print or the mode of some glue completes.
5. the encapsulating structure of a kind of flip LED chips according to claim 1, is characterized in that, the mixture that described fluorescent glue (4) is fluorescent material and silica gel or epoxy glue, and is coated on completely on described transparent sealing (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410471362.9A CN104218141A (en) | 2014-09-17 | 2014-09-17 | Packaging structure of inverted light-emitting diode (LED) chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410471362.9A CN104218141A (en) | 2014-09-17 | 2014-09-17 | Packaging structure of inverted light-emitting diode (LED) chip |
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| CN104218141A true CN104218141A (en) | 2014-12-17 |
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| CN201410471362.9A Pending CN104218141A (en) | 2014-09-17 | 2014-09-17 | Packaging structure of inverted light-emitting diode (LED) chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600179A (en) * | 2015-01-21 | 2015-05-06 | 电子科技大学 | LED fluorescent powder layer with conformal-remote structure and preparation method |
| CN105355729A (en) * | 2015-12-02 | 2016-02-24 | 佛山市国星半导体技术有限公司 | LED chip and manufacturing method |
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135624A (en) * | 2006-11-29 | 2008-06-12 | Kyoritsu Elex Co Ltd | Package for light-emitting diode, manufacturing method therefor, and light-emitting diode using the package |
| CN202871858U (en) * | 2012-11-08 | 2013-04-10 | 浙江丽普光电科技有限公司 | LED light source used for display screen |
| CN103682072A (en) * | 2013-11-29 | 2014-03-26 | 燕飞 | High-efficiency low-attenuation high-power white LED package structure |
| CN103915550A (en) * | 2014-03-14 | 2014-07-09 | 苏州晶品光电科技有限公司 | Semiconductor light-emitting device based on fluorescent powder |
-
2014
- 2014-09-17 CN CN201410471362.9A patent/CN104218141A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135624A (en) * | 2006-11-29 | 2008-06-12 | Kyoritsu Elex Co Ltd | Package for light-emitting diode, manufacturing method therefor, and light-emitting diode using the package |
| CN202871858U (en) * | 2012-11-08 | 2013-04-10 | 浙江丽普光电科技有限公司 | LED light source used for display screen |
| CN103682072A (en) * | 2013-11-29 | 2014-03-26 | 燕飞 | High-efficiency low-attenuation high-power white LED package structure |
| CN103915550A (en) * | 2014-03-14 | 2014-07-09 | 苏州晶品光电科技有限公司 | Semiconductor light-emitting device based on fluorescent powder |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600179A (en) * | 2015-01-21 | 2015-05-06 | 电子科技大学 | LED fluorescent powder layer with conformal-remote structure and preparation method |
| CN105355729A (en) * | 2015-12-02 | 2016-02-24 | 佛山市国星半导体技术有限公司 | LED chip and manufacturing method |
| CN105355729B (en) * | 2015-12-02 | 2018-06-22 | 佛山市国星半导体技术有限公司 | LED chip and preparation method thereof |
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
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Application publication date: 20141217 |
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