CN108615805B - Chip-level packaging white light chip and packaging method thereof - Google Patents
Chip-level packaging white light chip and packaging method thereof Download PDFInfo
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- CN108615805B CN108615805B CN201611136251.8A CN201611136251A CN108615805B CN 108615805 B CN108615805 B CN 108615805B CN 201611136251 A CN201611136251 A CN 201611136251A CN 108615805 B CN108615805 B CN 108615805B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
The invention provides a chip-level packaging white light chip and a packaging method thereof, wherein the method comprises the following steps: s1, arranging the LED chips on the surface of the first high-temperature film in sequence; s2, closely attaching the second high-temperature film to the surface of the LED chip; s3, uniformly mixing the fluorescent powder and the silica gel to obtain fluorescent glue, filling gaps among the LED chips with the fluorescent glue, and curing; s4, removing the second high-temperature film, and cutting to obtain a single LED chip with the periphery comprising fluorescent glue; s5, closely adhering a third high-temperature film to the surface of the LED chip in the step S4; s6, filling gaps among the LED chips with white glue obtained by uniformly mixing titanium dioxide, silicon dioxide and silica gel, and curing; s7, removing the third high-temperature film, and attaching a fluorescent film on the surface of the LED chip; s8, removing the first high-temperature film, and cutting to obtain a single chip-scale packaging white-light chip, so that the light-emitting angle of the LED chip is increased, the light-emitting brightness of the LED chip is improved, and the light spot is improved.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a chip-level packaging white light chip and a packaging method thereof.
Background
In recent years, LED (Light Emitting Diode) lamps have been rapidly developed due to their advantages of fast response speed, high brightness, long service life, energy saving, environmental protection, etc., and have gradually replaced the traditional incandescent lamps and energy saving lamps, becoming a new generation of energy saving illumination lamps.
The CSP (Chip Scale Package) is a novel white light Chip which is developed in the recent LED industry and reduces the cost, the ratio of the Chip area to the packaging area can exceed 1:1.14, and is close to the ideal condition of 1:1, an electrode is arranged on the bottom surface of the Chip, and a packaging colloid is directly packaged on the upper surface and the side surface of the Chip, so that the electrode on the bottom surface leaks outwards. With the development of the LED industry, the requirement for light emission of a white light chip is higher and higher, and how to further improve the light emission brightness while reducing the package volume is a target pursued by people.
Disclosure of Invention
Based on the above problems, an object of the present invention is to provide a chip-scale white light chip and a packaging method thereof, which effectively increase the light emitting angle of the conventional chip-scale white light chip.
A chip-level packaging method, comprising:
s1, arranging the LED chips on the surface of the first high-temperature film in sequence;
s2, closely adhering a second high-temperature film to the surface of the LED chip, wherein the highest temperature resistance of the second high-temperature film is lower than that of the first high-temperature film;
s3, uniformly mixing the fluorescent powder and the silica gel to obtain fluorescent glue, filling gaps among the LED chips with the fluorescent glue, and curing;
s4, removing the second high-temperature film, and cutting to obtain a single LED chip with the periphery comprising fluorescent glue;
s5, closely adhering a third high-temperature film to the surface of the LED chip in the step S4, wherein the highest temperature resistance of the third high-temperature film is lower than that of the first high-temperature film;
s6, filling gaps among the LED chips with white glue obtained by uniformly mixing titanium dioxide, silicon dioxide and silica gel, and curing;
s7, removing the third high-temperature film, and attaching a fluorescent film on the surface of the LED chip;
and S8, removing the first high-temperature film, and cutting to obtain a single chip-scale packaging white-light chip.
Further preferably, in step S2: closely attaching a second high-temperature film to the surface of the LED chip and placing the LED chip in a vacuum device, wherein the temperature resistance of the second high-temperature film is lower than that of the first high-temperature film; step S3 includes: s31, uniformly mixing the fluorescent powder and the silica gel to obtain fluorescent glue, and dotting the fluorescent glue around the LED chip; s32, opening the vacuum device, and the fluorescent glue automatically fills the gaps between the LED chips under the action of pressure difference.
Further preferably, in step S5: closely attaching a third high-temperature film to the surface of the LED chip in the step S4 and placing the third high-temperature film in a vacuum device, wherein the temperature resistance of the third high-temperature film is lower than that of the first high-temperature film;
step S6 includes:
s61, uniformly mixing titanium dioxide, silicon dioxide and silica gel to obtain white glue, and dotting the white glue around the LED chip;
s62, opening the vacuum device, and the white glue automatically fills the gaps between the LED chips under the action of pressure difference.
Further preferably, the method further includes, in step S5: the first high temperature film is removed, and the LED chips obtained in step S4 are sequentially flipped over onto a new first high temperature film.
Further preferably, in step S4, the second high temperature film is heated to the highest temperature resistance of the second high temperature film to remove the second high temperature film;
in step S7, the third high temperature film is heated to the highest temperature resistance of the third high temperature film to remove the third high temperature film;
in steps S5 and S8, the first high temperature film is removed by heating to the highest temperature resistance of the first high temperature film.
Further preferably, the highest temperature resistance of the second high-temperature film and the third high-temperature film is 130-140 ℃;
the highest temperature resistance of the first high-temperature film is 180 ℃.
The invention also provides a chip-level packaging white light chip, which comprises: LED chip, fluorescence glue film, white glue film and fluorescence diaphragm, wherein, the fluorescence glue film is located around the LED chip, and the fluorescence glue film outside is located to the white glue film, and the LED chip upper surface is located to the fluorescence diaphragm.
The chip-scale packaging white light chip and the packaging method thereof provided by the invention have the beneficial effects that:
in the white light chip and the packaging method thereof provided by the invention, the fluorescent glue layer is arranged between the LED chip and the peripheral white glue, so that under the condition that the LED chip is lightened, the blue light emitted by the LED chip can excite the peripheral fluorescent glue layer, thereby increasing the light-emitting angle of the LED chip, improving the light-emitting brightness of the LED chip and improving light spots.
Drawings
Fig. 1-8 are schematic flow charts of a white light chip packaging method according to the present invention.
1-a first high temperature film, 2-an LED chip, 3-a second high temperature film, 4-fluorescent glue, 5-a third high temperature film, 6-white glue, 7-a fluorescent membrane, 8-a UV film,
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects solved by the present invention more apparent, the present invention is further described in detail below with reference to the following embodiments.
1: flip-chip LED chips 2 of 45mil size are placed on a first high temperature film 1 resistant to 180 ℃ (losing adhesion at 180 ℃) at a certain distance, e.g., 10-150 μm (micrometer), as shown in fig. 1 (only 3 LED chips are shown);
2: the second high temperature film 3 (which loses viscosity at 130-140 ℃) is tightly attached to the surface of the LED chip to ensure that no air exists between the LED chip 2 and the second high temperature film 3, as shown in figure 2, and the second high temperature film 3 and the second high temperature film are placed in a vacuum device 4 (not shown);
3: uniformly mixing fluorescent powder and silica gel according to a certain mass ratio, such as 1: 0.2-3 to obtain fluorescent gel 4, and dotting the fluorescent gel around the LED chip; opening the vacuum device, destroying the vacuum environment in the vacuum device, filling the gaps between the LED chips with the fluorescent glue under the action of pressure difference, and curing the fluorescent glue at a high temperature of 100 ℃, as shown in FIG. 3;
4: at the temperature of 130-140 ℃, the second high-temperature film loses viscosity, the second high-temperature film is removed, and the blade is cut into single LED chips with the fluorescent glue layers around the chips, wherein the thickness of the fluorescent glue layers is 1-50 microns;
5: at a high temperature of 180 ℃, the first high-temperature film supporting the LED chip loses viscosity, the LED chip is turned over to a new film and is poured onto the new first high-temperature film again (the adhesiveness is lost at the temperature of more than 180 ℃);
6: tightly attaching the third high-temperature film 3 (which loses viscosity at 130-140 ℃) to the surface of the LED chip to ensure that no air exists between the LED chip 2 and the third high-temperature film 3, as shown in FIG. 4, and placing the third high-temperature film 3 in a vacuum device 4 (not shown);
7: mixing titanium dioxide, silicon dioxide and silica gel into white glue 6 (high-reflectivity glue) according to the mass ratio of silica gel (titanium dioxide and silicon dioxide) of 1: 0.3-0.7, and dotting the white glue around the chip; opening the vacuum device, breaking the vacuum environment in the vacuum device, filling the gaps between the LED chips with the white glue under the action of pressure difference, and curing the white glue at a high temperature of 100 ℃, as shown in FIG. 5;
8: at the temperature of 130-140 ℃, the third high-temperature film loses viscosity, and the third high-temperature film is removed; then, the fluorescent film 7 is placed on the surface of the LED chip, as shown in fig. 6, and under the action of external forces such as vacuum, pressure and high temperature, the fluorescent film and the chip are tightly adhered together; it should be noted that the interfaces between the fluorescent film and the chip, between the fluorescent film and the white glue, and the like, need to be cleaned by a plasma cleaning machine, and the viscosity between the interfaces;
9: removing a new first high-temperature film in the LED chip containing the fluorescent membrane at a high temperature of 180 ℃, and adhering the LED chip on an Ultraviolet (UV) film 8 through the surface of the fluorescent membrane, as shown in FIG. 7;
10: cutting the whole body into individual chip scale package white light chips by a blade, as shown in fig. 8;
11: and sorting, taping and warehousing the chip-scale packaging white light chips.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. A chip scale packaging method is characterized by comprising the following steps:
s1, arranging the LED chips on the surface of the first high-temperature film in sequence;
s2, closely adhering a second high-temperature film to the surface of the LED chip, wherein the highest temperature resistance of the second high-temperature film is lower than that of the first high-temperature film;
s3, uniformly mixing the fluorescent powder and the silica gel to obtain fluorescent glue, filling gaps among the LED chips with the fluorescent glue, and curing;
s4, removing the second high-temperature film, and cutting to obtain a single LED chip with the periphery comprising fluorescent glue; removing the first high-temperature film and overturning the LED chip to the surface of a new first high-temperature film;
s5, closely adhering a third high-temperature film to the surface of the LED chip in the step S4, wherein the highest temperature resistance of the third high-temperature film is lower than that of the first high-temperature film;
s6, filling gaps among the LED chips with white glue obtained by uniformly mixing titanium dioxide, silicon dioxide and silica gel, and curing;
s7, removing the third high-temperature film, and attaching a fluorescent film on the surface of the LED chip;
and S8, removing the new first high-temperature film, and cutting to obtain a single chip-scale packaging white-light chip.
2. The chip scale packaging method of claim 1,
in step S2: closely attaching a second high-temperature film to the surface of the LED chip and placing the LED chip in a vacuum device, wherein the highest temperature resistance of the second high-temperature film is lower than that of the first high-temperature film;
step S3 includes:
s31, uniformly mixing the fluorescent powder and the silica gel to obtain fluorescent glue, and dotting the fluorescent glue around the LED chip;
s32, opening the vacuum device, and the fluorescent glue automatically fills the gaps between the LED chips under the action of pressure difference.
3. The chip scale packaging method of claim 1,
in step S5: closely attaching a third high-temperature film to the surface of the LED chip in the step S4 and placing the third high-temperature film in a vacuum device, wherein the highest temperature resistance of the third high-temperature film is lower than that of the first high-temperature film;
step S6 includes:
s61, uniformly mixing titanium dioxide, silicon dioxide and silica gel to obtain white glue, and dotting the white glue around the LED chip;
s62, opening the vacuum device, and the white glue automatically fills the gaps between the LED chips under the action of pressure difference.
4. The chip scale packaging method according to claim 3, further comprising in step S5: the first high temperature film is removed, and the LED chips obtained in step S4 are sequentially flipped over onto a new first high temperature film.
5. The chip scale packaging method of claim 4,
heating to the highest temperature resistance of the second high temperature film to remove the second high temperature film in step S4;
in step S7, the third high temperature film is heated to the highest temperature resistance of the third high temperature film to remove the third high temperature film;
in steps S5 and S8, the first high temperature film is removed by heating to the highest temperature resistance of the first high temperature film.
6. The chip scale packaging method according to any one of claims 1 to 5,
the highest temperature resistance of the second high-temperature film and the third high-temperature film is 130-140 ℃;
the highest temperature resistance of the first high-temperature film is 180 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611136251.8A CN108615805B (en) | 2016-12-12 | 2016-12-12 | Chip-level packaging white light chip and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611136251.8A CN108615805B (en) | 2016-12-12 | 2016-12-12 | Chip-level packaging white light chip and packaging method thereof |
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| CN108615805A CN108615805A (en) | 2018-10-02 |
| CN108615805B true CN108615805B (en) | 2020-06-09 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN111933759A (en) * | 2020-08-17 | 2020-11-13 | 上海旭择电子零件有限公司 | Method for preparing surface light source COB by adopting two-color CSP chip and surface light source COB |
| CN111969094B (en) * | 2020-09-02 | 2022-10-04 | 安晟技术(广东)有限公司 | Packaging structure of LED chip |
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| CN201885056U (en) * | 2010-09-19 | 2011-06-29 | 深圳帝光电子有限公司 | LED backlight module and display terminal |
| KR20130100528A (en) * | 2012-03-02 | 2013-09-11 | 삼성전자주식회사 | Light emitting device package and method for manufacturing the same |
| CN103534822A (en) * | 2011-04-20 | 2014-01-22 | 株式会社Elm | Light emitting device and method for manufacturing same |
| JP2015084384A (en) * | 2013-10-25 | 2015-04-30 | シチズン電子株式会社 | Led light-emitting device |
| CN104916763A (en) * | 2015-05-29 | 2015-09-16 | 广州市鸿利光电股份有限公司 | Packaging method for chip scale packaging LED |
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Patent Citations (6)
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| JP2009147312A (en) * | 2007-11-20 | 2009-07-02 | Nanoteco Corp | White led device and method of manufacturing the same |
| CN201885056U (en) * | 2010-09-19 | 2011-06-29 | 深圳帝光电子有限公司 | LED backlight module and display terminal |
| CN103534822A (en) * | 2011-04-20 | 2014-01-22 | 株式会社Elm | Light emitting device and method for manufacturing same |
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Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |
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