TWM453248U - Polycrystalline wide angle LEDs - Google Patents

Description

Polycrystalline wide-angle light-emitting diode

The present invention relates to a polycrystalline wide-angle light-emitting diode, in particular to a microstructure in which an angled region is applied by a single lens, so that the formed light pattern has a wide-angle and uniform light output effect.

According to the light-emitting diode, the luminous efficiency is roughly distinguished, and can be divided into internal efficiency and external efficiency. Internal efficiency refers to the luminous efficiency inside the wafer, and external efficiency is the ratio of the light before and after passing through the lens (Lens).

Sub-press, the power (watt) of a light-emitting diode chip has its limit, so sometimes multiple wafers must be set up to achieve the required power. As shown in FIGS. 1A and 1B, a polycrystalline light-emitting diode 70 is conventionally provided with a plurality of LED chips 72 in a reflective cup 71 and then packaged by a lens 73. However, it is checked that the package structure of such a multi-wafer single circular lens has a light shape of Lambertian Distribution and cannot meet a wide angle requirement of more than 120 degrees. Of course, its uniformity is also a problem.

In view of the above problem, the Institute of Industrial Technology, in its publication 201025658, discloses a polycrystalline light-emitting diode 80 having a package structure as shown in FIGS. 2A and 2B, including a reflective cup 81 and a plurality of light-emitting wafers 82. Located in the reflector cup 81; and a lens 83 is provided for each of the illuminating wafers 82. However, it is checked that the package of a wafer-lens is more complicated to process, and there will still be gaps between the two lenses, thereby affecting the entire light-emitting two. The uniformity of light output of the polar body 80.

Furthermore, if the LED package is not specially designed for optical design, it will form an exit angle of about 120 degrees, and it is impossible to achieve a wide-angle illumination area of more than 120 degrees required by a special industry. Therefore, the conventional light-emitting diode 70 or 80 described above can only increase the "power" of the light when it is a multi-wafer, but the angle of light emission cannot be increased.

Lite-on, in its Taiwan Patent Publication No. 201105901, discloses a package structure of a light-emitting diode as shown in FIG. 3, and a concave curved surface 91 is formed on the package 90 to make the light-emitting chip 92 The emitted light is refracted as it passes through the concave curved surface 91, and has a varying degree of light divergence along the concave contour of the concave curved surface 91, such that its light shape is distributed as a Batwing Contribution. However, the concave curved surface design may have the function of changing the shape of the light for the single light-emitting chip 92, but if multi-wafer is used, the shape and uniformity still have doubts.

As can be seen from the above, polycrystalline light-emitting diodes have been used in many applications in the industry, and the improvement of their external efficiency is still the breakthrough and overcome by the industry.

The main purpose of this creation is to provide a polycrystalline wide-angle light-emitting diode having a microstructure in which an angled region is applied by a single lens, so that the formed light shape has a wide-angle and uniform light-emitting effect.

In order to achieve the above object, the technical means adopted by the present invention comprises: a substrate having a heat conducting portion and positive and negative electrodes disposed on sides of the heat conducting portion; a reflective cup body formed on the substrate; at least two light emitting chips, Is disposed in the heat conducting portion and located inside the reflective cup body; an adhesive layer disposed inside the reflective cup body to encapsulate the light emitting chip; and a lens disposed on the reflective cup body and the sealant layer Top edge And a concave portion is formed in the middle surface thereof; wherein the concave portion has a V-shaped groove and is at least corresponding to a lens angle (θ) of less than 80 degrees below the contour of the V-shaped groove At the position of the light-emitting chip, a microstructure for refracting light emitted by the light-emitting chip is provided.

However, the angle (θ) described above is defined as a pointed conical range formed by diverging the center of the substrate and the lens upward.

According to the feature of the present invention, the microstructure is disposed on the surface of the V-shaped groove, and may include a part or all of the surface of the V-shaped groove; and the shape and distribution area of the microstructure may be The number and location of the illuminating wafers are formed; furthermore, the microstructures are comprised of any of a rough surface, a wave shape, and a zigzag shape.

In addition to the surface of the V-shaped groove, the microstructure of the present invention may be disposed on the surface of the V-shaped groove and the lens area (Z) included between the angle (θ).

Further, the cup depth of the reflective cup of the present invention is preferably 0.20 to 0.5 um. Further, the lens is preferably a symmetrical circular body, but is not limited thereto. In a preferred embodiment, the outermost edge radius (R1) of the circular lens is 1.1 to 2.5 times the highest point radius (R2), and the highest point height (H1) of the V-shaped groove is the middlemost concave point height (H2). ) 4.5 to 9.5 times.

Accordingly, the polycrystalline wide-angle light-emitting diode disclosed in the present invention overcomes the problem of the conventional light-emitting diodes of FIGS. 1 to 3, and has a V-shaped groove angle region capable of encapsulating a multi-chip with a single lens and using a single lens. The microstructure is such that the formed light shape has a wide angle and the uniformity of light emission is enhanced.

10‧‧‧Substrate

11‧‧‧Transfer Department

12‧‧‧ positive electrode

13‧‧‧Negative electrode

20‧‧‧Reflecting cup

21‧‧‧ Filling Department

30‧‧‧Lighting chip

40‧‧‧ Sealing layer

50‧‧‧ lens

51‧‧‧ recessed part (V-shaped groove)

52‧‧‧Microstructure

53‧‧‧ outer edge

54‧‧‧ highest point

55‧‧‧The most concave point

60‧‧‧Lighting diode

1A and 1B are schematic views showing the structure of a polycrystalline light-emitting diode.

2A and 2B are schematic views showing the structure of the light-emitting diode No. 201025658.

FIG. 3 is a schematic structural view of a light-emitting diode of No. 201105901.

4A is a top plan view of a preferred embodiment of the present invention.

Figure 4B is a cross-sectional view of a preferred embodiment of the present invention.

Figure 5 is a top plan view of another embodiment of the present invention.

Fig. 6 is a schematic view showing the proportion of the lens structure of the present invention.

First, referring to FIG. 4A and FIG. 4B, a possible embodiment of the polycrystalline wide-angle LED 6 of the present invention includes: a substrate 10 having a heat conducting portion 11 and positive and negative electrodes disposed on both sides of the heat conducting portion Electrodes 12, 13. A reflective cup 20 is formed on the substrate 10. In the embodiment, the reflective cup 20 is made of an insulating material, and the heat conducting portion 11 and the positive and negative electrodes 12 and 13 are disposed outside the cup. There is provided a filling portion 21 which can be used not only as an insulating function but also as a function of the fixed substrate 10. This type of substrate construction has been described in the applicant's US Patent No. 7,939,919.

At least two illuminating wafers 30 are disposed in the heat conducting portion 11 and located inside the reflecting cup body 20. The plurality of illuminating wafers 30 are electrically connected to the positive and negative electrodes 12 and 13 to provide the illuminating wafer 30. Voltage or other control signal.

An adhesive layer 40 is disposed inside the reflective cup 20 to coat the luminescent wafer 30. The encapsulant 40 can be doped with phosphor powder to match the color mixing mechanism of the luminescent wafer 30. A lens 50 is disposed on the top edge of the reflective cup 20 and the sealant layer 40, and the top surface thereof forms a concave portion 51.

The feature of the above-mentioned feature is the prior art (Prior Art), which is not the subject of the patent of this creation.

The main feature of the present invention is that the concave portion 51 has a V-shaped groove instead of the concave curved surface 91 shown in FIG. 3, and is less than 80 degrees (θ) below the contour of the V-shaped groove. In the region (Z) of the lens 50, at least at a position corresponding to each of the light-emitting wafers 30, a microstructure 52 for refracting light emitted by the light-emitting wafer 30 is provided.

The angle (θ) referred to in the present invention is a pointed conical range formed by diverging the center of the substrate 10 and the lens 50 upward. If the microstructure 52 is made in a region where the angle (θ) exceeds 80 degrees, The light shape is destroyed and the wide-angle (greater than 120 degrees) illumination pattern cannot be achieved.

Therefore, as shown in FIG. 4B, in the embodiment of the present invention, the microstructure 52 can be disposed on the surface of the V-shaped groove, and the microstructure 52 can be formed by a rough surface, a wave shape, a zigzag shape or the like. The shape and distribution area of the microstructure 52 may be set according to the number and position of the light-emitting chips 30, and include a part or the entire surface of the surface of the V-shaped groove.

In the embodiment of FIGS. 4A and 4B, the illuminating wafer 30 is symmetrically disposed, so that the disposed portion of the microstructure 52 can be on the surface of the concave portion 51 (ie, the V-shaped groove) at a relative position above the luminescent wafer 30, and The microstructure 52 may be provided in part or in the entire recess 51.

Furthermore, the microstructure 52 is not limited to the area of the lens 50 provided on the surface of the V-shaped groove (recessed portion 51) and having an angle (θ) of less than 80 degrees below the contour of the V-shaped groove 51, as shown by (Z). The microstructure 52 is formed in this region to refract light emitted by the luminescent wafer 30.

In addition, as shown in FIG. 5, another possible embodiment discloses that the illuminating wafer 30 is arranged in four symmetry. At this time, the micro structure 52 can be disposed in most of the entire concave portion 51 (ie, the V-shaped groove). Regional or all areas. Of course, the number of the light-emitting chips 30 is not limited to two or Four, which can be set according to actual needs.

FIG. 6 is a schematic view showing a preferred scale shape of the package structure of the present invention. The lens 50 in the embodiment is a symmetrical circle shape, but is not limited thereto. The radius (R1) from the center to the outer edge 53 is 1.1 to 2.5 times the radius (R2) of the highest point 54 of the lens 50, and the height (H1) of the highest point 54 of the lens 50 is the most concave point 55 of the V-shaped groove 51. The height (H2) is 4.5 to 9.5 times. The lens 50 is prepared in proportion to the design of the exposed microstructure 52, and can be used with a single lens 50 to match a plurality of light-emitting wafers 30, and the formed light shape has a light-shaped distribution of a batwing shape. (Batwing Contribution) and the effect of uniform light.

Accordingly, the polycrystalline wide-angle light-emitting diode 60 disclosed in the present invention overcomes the problems of the conventional light-emitting diodes 70, 80 and 90 shown in FIGS. 1 to 3, and is also capable of being packaged in a single lens 50. The multi-wafer 30, and the microstructure 52 of the angle region of the V-shaped groove 51 of the single lens 50 is used, so that the formed light shape has a wide angle of more than 120 degrees and the uniformity of light emission is enhanced.

In summary, the structure revealed by this creation is unprecedented, and it can achieve the improvement of efficacy, and it can be used for industrial utilization. It fully complies with the new patent requirements, and invites your review committee to grant patents. Innovation, no sense of morality.

However, the drawings and descriptions disclosed above are only preferred embodiments of the present invention, and modifications or equivalent changes made by those skilled in the art in accordance with the spirit of the present invention should still be included in the scope of the patent application.

10‧‧‧Substrate

11‧‧‧Transfer Department

12‧‧‧ positive electrode

13‧‧‧Negative electrode

20‧‧‧Reflecting cup

21‧‧‧ Filling Department

30‧‧‧Lighting chip

40‧‧‧ Sealing layer

50‧‧‧ lens

51‧‧‧ recessed part (V-shaped groove)

52‧‧‧Microstructure

60‧‧‧Lighting diode

Claims (8)

A polycrystalline wide-angle light emitting diode comprising: a substrate having a heat conducting portion and positive and negative electrodes disposed on a side of the heat conducting portion; a reflective cup formed on the substrate; at least two light emitting chips are disposed on the substrate The heat conducting portion is located inside the reflecting cup body; an adhesive layer is disposed inside the reflecting cup body to cover the light emitting chip; and a lens is disposed on the top edge of the reflecting cup body and the sealing layer And a concave portion is formed in the middle surface thereof; wherein the concave portion has a V-shaped groove and is at least corresponding to a lens angle (θ) of less than 80 degrees below the contour of the V-shaped groove At the position of the light-emitting chip, a microstructure for refracting light emitted by the light-emitting chip is provided. The polycrystalline wide-angle light-emitting diode according to claim 1, wherein the included angle (θ) is defined as a pointed conical range formed by diverging the center of the substrate and the lens upward. The polycrystalline wide-angle light-emitting diode according to claim 2, wherein the microstructure is disposed on a surface of the V-shaped groove, and includes a surface or a whole surface of the V-shaped groove. The polycrystalline wide-angle light-emitting diode according to claim 3, wherein the shape and the distribution area of the microstructure are set according to the number and position of the light-emitting chips. The polycrystalline wide-angle light-emitting diode according to claim 4, wherein the microstructure comprises: a rough surface, a wave shape, and a zigzag shape. The polycrystalline wide-angle light-emitting diode according to claim 2, wherein the microstructure is provided in a lens region (Z) between the V-shaped groove and the included angle (θ). The polycrystalline wide-angle light-emitting diode according to claim 1, wherein the reflective cup has a cup depth of 0.20 to 0.5 mm. The polycrystalline wide-angle light-emitting diode according to any one of claims 1 to 7, wherein the lens is a symmetrical circular body, and a radius (R1) of an outermost edge is a radius of a highest point ( R2) is 1.1 to 2.5 times, and the height (H1) of the highest point of the lens is 4.5 to 9.5 times the height (H2) of the most concave point of the V-shaped groove.