CN202796936U

CN202796936U - Polycrystalline wide-angle light emitting diode

Info

Publication number: CN202796936U
Application number: CN2012202719186U
Authority: CN
Inventors: 謝佳翰; 黃志騰; 陳春芳
Original assignee: Lumenmax Optoelectronics Co Ltd
Current assignee: Lumenmax Optoelectronics Co Ltd
Priority date: 2012-06-11
Filing date: 2012-06-11
Publication date: 2013-03-13
Anticipated expiration: 2022-06-11

Abstract

The utility model discloses a polycrystalline wide-angle light emitting diode. The light emitting diode comprises a substrate having a heat-conduction part and a positive electrode and a negative electrode which are arranged on two sides of the heat-conduction part; a reflector cup formed on the substrate; at least two light emitting chips which are arranged on the heat-conduction part and inside the reflector cup; a sealant layer arranged inside the reflector cup and covering the light emitting chips; and a lens arranged on a top edge of the reflector cup and the sealant layer and provided with a recess part in the center on the top surface; wherein the section of the recess part is a V-shaped groove, and micro structures for refracting lights emitted by the light emitting chips are arranged at least at positions corresponding the light emitting chips within an area of a lens angle of less than 80 degrees under the V-shaped groove. According to the polycrystalline wide-angle light emitting diode provided by the utility model, a single lens can be used for multiple chips, and the light shape has a wide angle and light-emitting uniformity.

Description

The polycrystalline wide angle luminous diode

Technical field

The utility model is relevant a kind of polycrystalline wide angle luminous diode, and espespecially a kind of micro-structural with single lens utilization angle zone makes formed smooth type have wide-angle and the uniform effect of bright dipping.

Background technology

The luminous efficiency of light-emitting diode is distinguished roughly, can be divided into internal efficiency and external efficiencies.Internal efficiency refers to the luminous efficiency of chip internal, external efficiencies then be light penetration out after, through the ratio before and after lens (Lens).

Inferior person, the power of a light-emitting diode chip for backlight unit (watt) its limit is arranged, therefore sometimes for reaching power demand multiple chips must be set.Shown in Figure 1A, 1B, existing a kind of polycrystalline light emitting diode 70, it is to be provided with plurality of LEDs chip 72 in a reflector 71, and then is encapsulated with lens 73.But look into, the encapsulating structure of the single round lens of this kind multi-chip, its light shape is optically focused light shape (Lambertian Distribution), can't reach the wide-angle demand greater than 120 degree.Certainly, its uniformity also is a problem points.

For the problems referred to above, Industrial Technology Research Institute discloses a kind of polycrystalline light emitting diode 80 in it discloses No. 201025658 patents, and its packaging structure comprises a reflector 81 shown in Fig. 2 A, Fig. 2 B; Several luminescence chips 82 are positioned at this reflector 81; And corresponding each luminescence chip 82 is provided with lens 83.But look into, more complicated in its processing of the packaging body of a chip one lens, and still can have the space between two lens, and then affect the outgoing light homogeneity of whole light-emitting diode 80.

Moreover, if LED encapsulation body is not done special optical design, roughly can form the rising angle that is about 120 degree, can't reach the required wide-angle irradiation area greater than 120 degree of special dealer.Be with, above-mentioned existing light-emitting

diode

70 or 80, vertically be multi-chip, also can only promote luminous " power ", but still can't increase the angle of its bright dipping.

Its TaiWan, China of the precious company (Lite-on) of light discloses in No. 201105901 patents, disclose a kind of encapsulating structure of light-emitting diode as shown in Figure 3, its packaging body 90 tops form an inner concave arc surface 91, the light that luminescence chip 92 is sent reflects when passing through this inner concave arc surface 91, and along the lower concave contour of inner concave arc surface 91 in various degree divergence of beam is arranged, make its light shape be distributed as bat-wing (Batwing Contribution).But look into, the function that the inner concave arc surface design perhaps changes light shape for single luminescence chip 92, but as using multi-chip, then light shape and uniformity still have its doubt.

As from the foregoing, polycrystalline light emitting diode is existing many application industrially, and for the lifting of its external efficiencies, are still dealer institute wish and break through and overcome.

The utility model content

Technical problem underlying to be solved in the utility model is, overcome the defects that prior art exists, and a kind of polycrystalline wide angle luminous diode is provided, it has the micro-structural of using the angle zone with single lens, makes formed smooth shape have wide-angle and the uniform effect of bright dipping.

The technical scheme that its technical problem that solves the utility model adopts is:

A kind of polycrystalline wide angle luminous diode comprises:

One substrate possesses heat-conducting part and is located at the positive and negative electrode of heat-conducting part side; One reflection cup is formed on this substrate; At least two luminescence chips are located at this heat-conducting part and to be positioned at this reflection cup inner; One adhesive layer, it is inner and this luminescence chip is coated to be arranged at this reflection cup; And lens, be arranged at the apical margin of this reflection cup and this adhesive layer, and end face forms recess in the middle of it; It is characterized in that: the V-shaped ditch of the section of this recess, and in this zone less than the lens angle (θ) of 80 degree, V-arrangement ditch profile below, at least in the position corresponding to this luminescence chip, be provided with the micro-structural that makes the light refraction that this luminescence chip sends.

And aforementioned described angle (θ) is defined as with the center of this substrate and lens upwards disperses the conical scope of formed point.

According to the above-mentioned feature of the utility model, this micro-structural is located on this V-arrangement ditch surface, and it can comprise a part of surface or all surfaces that is located at this V-arrangement ditch; The again shape of this micro-structural and distributed areas can be equipped with according to the quantity of this luminescence chip and position and form; Moreover this micro-structural comprises: matsurface, wavy and zigzag wherein any.

This micro-structural of the present utility model be except can being located at this V-arrangement ditch surface again, also can be located at V-arrangement ditch surface should and angle (θ) between the lens area (Z) that includes.

Further, the cup of reflection cup of the present utility model is dark is that 0.20～0.5um is for better.And these lens be symmetrical round for better, but be not limited to this.In a most preferred embodiment, this round lens outer most edge radius (R1) is 1.1～2.5 times of peak radius (R2), and this V-arrangement ditch peak height (H1) is 4.5～9.5 times of the concave point height (H2) in centre.

Accordingly, the disclosed polycrystalline wide angle luminous diode of the utility model, overcome the problem points of the existing light-emitting diode of Fig. 1 to Fig. 3, having can be with single lens package multi sheet, and use the micro-structural in the V-arrangement ditch angle zone of single lens, make formed smooth shape have wide-angle and the uniform effect of bright dipping.

Description of drawings

Below in conjunction with drawings and Examples the utility model is further specified.

Figure 1A and Figure 1B are the structural representations of existing a kind of polycrystalline light emitting diode.

Fig. 2 A and Fig. 2 B are the structural representations of No. 201025658 light-emitting diodes.

Fig. 3 is the structural representation of No. 201105901 light-emitting diodes.

Fig. 4 A is the vertical view of the utility model preferred embodiment.

Fig. 4 B is the cutaway view of the utility model preferred embodiment.

Fig. 5 is the vertical view of another embodiment of the utility model.

Fig. 6 is lens arrangement ratio schematic diagram of the present utility model.

The number in the figure explanation:

10 substrates

11 heat-conducting parts

12 positive electrodes

13 negative electrodes

20 reflection cups

21 insert section

30 luminescence chips

40 adhesive layers

50 lens

51 recess (V-arrangement ditch)

52 micro-structurals

53 outer rims

54 peaks

55 concave points

60 light-emitting diodes

Embodiment

At first, see also shown in Fig. 4 A, Fig. 4 B, polycrystalline wide angle luminous diode 60 of the present utility model, the one possible embodiments comprises:

One substrate 10 possesses heat-conducting part 11 and is located at the positive and

negative electrode

12,13 of heat-conducting part dual-side.One reflection cup 20 is formed on this substrate 10, in the present embodiment, this reflection cup 20 is made of insulating material, it also is provided with the section of inserting 21 between this heat-conducting part 11 and positive and

negative electrode

12,13 except cup, it not only can be used as insulation function, also as the function of fixing base 10, and this type base plate structure has been seen in applicant US Patent No.7,939, No. 919 Patent Cases hold and do not give unnecessary details.

At least two luminescence chips 30 are located at this heat-conducting part 11 and are positioned at this reflection cup 20 inside, and this is counted, and luminescence chip 30 is able to wire and positive and

negative electrode

12,13 is electrically connected, to provide luminescence chip 30 required voltage or other control signal.

One adhesive layer 40, it is inner and this luminescence chip 30 is coated to be arranged at this reflection cup 20, and this adhesive layer 40 can the doping fluorescent powder, with the colour mixture mechanism of collocation luminescence chip 30.And lens 50, be arranged at the apical margin of this reflection cup 20 and this adhesive layer 40, and end face forms recess 51 in the middle of it.

And above-mentioned feature consists of genus prior art (Prior Art), and non-patent purpose of the present utility model is held and do not given unnecessary details.

The utility model principal character is: the V-shaped ditch of the section of this recess 51, but not existing recessed cambered surface 91 shown in Figure 3, and along the zone interior (Z) of this V-arrangement ditch profile below less than the lens 50 of 80 degree angles (θ), at least in the position corresponding to each luminescence chip 30, be provided with the micro-structural 52 that makes the light refraction that this luminescence chip 30 sends.

The angle of the above-mentioned indication of the utility model (θ), upwards disperse the conical scope of formed point with the center of this substrate 10 and lens 50, make micro-structural 52 if surpass the zone of 80 degree at this angle (θ), then light shape destruction can't be able to be reached the irradiation light shape of wide-angle (greater than 120 degree).

Be with, shown in Fig. 4 B, among the utility model one embodiment, this micro-structural 52 can be located at this V-arrangement ditch surface, this micro-structural 52 can be that matsurface, wavy and zigzag or other shape consist of.And the shape of its this micro-structural 52 and distributed areas can according to the quantity of luminescence chip 30 and the position is set form, and it comprises a part that is located at this V-arrangement ditch surface, or all surfaces.

Among the embodiment of Fig. 4 A, Fig. 4 B, this luminescence chip 30 is that two symmetries set, therefore the setting area of this micro-structural 52, can be above luminescence chip 30 recess 51 (the being the V-arrangement ditch) surface of relative position, and can the part area or whole recess 51 all establish micro-structural 52.

Moreover, this micro-structural 52 is not limited to be located at V-arrangement ditch (recess 51) surface, below V-arrangement ditch 51 profiles, spend the zone of the lens 50 of angles (θ) less than 80, scope shown in (Z), do micro-structural 52 in this zone, the light that luminescence chip 30 is launched produces refraction.

In addition, as shown in Figure 5, its another possible embodiments is that announcement luminescence chip 30 is that four symmetries set, and the at this moment setting of this micro-structural 52 can be at most of zone or the Zone Full of whole recess 51 (being the V-arrangement ditch).Certainly, non-limiting two or four of the quantity of luminescence chip 30, it can be according to the actual demand setting.

Fig. 6 is the preferred proportion shape schematic diagram of encapsulating structure of the present utility model, and the lens 50 in the present embodiment are the round of symmetry, but not as limit.Its center to the radius (R1) of outer rim 53 is 1.1～2.5 times of radius (R2) of lens 50 peaks 54, and the height (H1) of these lens 50 peaks 54 is 4.5～9.5 times of height (H2) of these V-arrangement ditch 51 concave points 55.With the made lens 50 of ratio, the design of the above-mentioned micro-structural 52 of arranging in pairs or groups again, have and to use with single lens 50 several luminescence chips 30 of arranging in pairs or groups, and the light shape of formation is had make its light shape be distributed as bat-wing (Batwing Contribution) and the uniform effect of bright dipping.

Accordingly, the disclosed polycrystalline wide angle luminous diode 60 of the utility model, overcome Fig. 1 to existing light-emitting diode 70 shown in Figure 3,80 and 90 problem points, also both having the utlity model has can be with single lens 50 package multi sheet 30, and use the micro-structural 52 in the V-arrangement ditch 51 angle zones of single lens 50, formed smooth shape is had greater than 120 degree wide-angle and the uniform effects of bright dipping.

The above, it only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, every foundation technical spirit of the present utility model all still belongs in the scope of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment does.

In sum, the utility model is on structural design, use practicality and cost benefit, it is required to meet industry development fully, and the structure that discloses also is to have unprecedented innovative structure, have novelty, creativeness, practicality, the regulation that meets relevant new patent important document is so mention application in accordance with the law.

Claims

1. polycrystalline wide angle luminous diode comprises:

One substrate possesses heat-conducting part and is located at the positive and negative electrode of heat-conducting part side;

One reflection cup is formed on this substrate;

At least two luminescence chips are located at this heat-conducting part and to be positioned at this reflection cup inner;

One adhesive layer, it is inner and this luminescence chip is coated to be arranged at this reflection cup; And

One lens are arranged at the apical margin of this reflection cup and this adhesive layer, and end face forms recess in the middle of it;

It is characterized in that:

The V-shaped ditch of the section of this recess, and in zone less than the lens angles (θ) of 80 degree, this V-arrangement ditch profile below at least in the position corresponding to this luminescence chip, is provided with the micro-structural that makes the light refraction that this luminescence chip sends.

2. polycrystalline wide angle luminous diode according to claim 1 is characterized in that, described angle (θ) is defined as with the center of this substrate and lens upwards disperses the conical scope of formed point.

3. polycrystalline wide angle luminous diode according to claim 2 is characterized in that, described micro-structural is located on this V-arrangement ditch surface, and it comprises a part of surface or all surfaces that is located at this V-arrangement ditch.

4. polycrystalline wide angle luminous diode according to claim 3 is characterized in that, the shape of described micro-structural and distributed areas are to be equipped with according to the quantity of this luminescence chip and position to form.

5. polycrystalline wide angle luminous diode according to claim 4 is characterized in that, described micro-structural comprises: matsurface, wavy and zigzag wherein any.

6. polycrystalline wide angle luminous diode according to claim 2 is characterized in that, described micro-structural is located at the lens area (Z) that includes between this V-arrangement ditch and this angle (θ).

7. polycrystalline wide angle luminous diode according to claim 1 is characterized in that, the cup of described reflection cup is dark to be 0.20～0.5mm.

8. each described polycrystalline wide angle luminous diode in 7 according to claim 1, it is characterized in that, described lens are symmetrical round, the radius of its outer most edge (R1) is 1.1～2.5 times of radius (R2) of peak, and the height of this lens peak (H1) is 4.5～9.5 times of height (H2) of the concave point of this V-arrangement ditch.