CN107591468A - A kind of emitting led method for packing of one side based on CSP encapsulating structures - Google Patents
A kind of emitting led method for packing of one side based on CSP encapsulating structures Download PDFInfo
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- CN107591468A CN107591468A CN201710576013.7A CN201710576013A CN107591468A CN 107591468 A CN107591468 A CN 107591468A CN 201710576013 A CN201710576013 A CN 201710576013A CN 107591468 A CN107591468 A CN 107591468A
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Abstract
The invention discloses a kind of emitting led method for packing of one side based on CSP encapsulating structures of semiconductor applications application.The encapsulation step is as follows：A) silica gel fluorescent powder film piece is installed on carrier；B) LED chip is mounted on silica gel fluorescent powder film piece；C product) is subjected to high-temperature baking and reinforces operation；D) cut using cutting equipment according to the gap being sized along LED chip, form Cutting Road；E the silica gel fluorescent powder film piece cut in Cutting Road) is removed；F product) is subjected to plasma cleaning；G) silica colloidal point is located between adjacent LED chip；H product) is subjected to curing operation；I) cutting operation to silica colloidal is carried out using cutting equipment；J) product is separated, obtains the luminous CSP LED products of single one side.The production stage is simple, and easily operation, so as to reduce production requirement, realizes the reduction of production cost, while improves production qualification rate, and guarantee is conformity provided for product quality.
Description
Technical field
The present invention relates to a kind of a kind of emitting led encapsulation of one side based on CSP encapsulating structures of semiconductor applications application
Method.
Background technology
Two kinds of encapsulation that CSP (Chip Scale Package) encapsulation in the market mainly has five faces luminous and one side lights
Form, the luminous light extraction efficiency in five faces is high, but due to being lighted from five faces, photochromic uniformity and directive property are poor, and high-end
The field photochromic uniformity of equal demand is good, and the directive property that lights is good, is easy to luminous intensity distribution, can not meet the application of high-end field；One side lights
Packing forms, chip surrounding is wrapped up using white barricade so that chip front side light extraction, other four sides not light extractions, Ci Zhongfeng
It is good to fill photochromic uniformity, the directive property that lights is good, but packaging technology needs the first white wall of pressing mold around flip-chip, then in chip
Surface pressing mold white light glue, packaging technology is extremely complex, and production efficiency is relatively low, and product quality can not ensure.
As patent of invention CN201710260967.7 discloses a kind of CSP LED encapsulation methods, comprise the following steps that：Step
First, central area is provided as empty white reflection enclosure wall, and the white reflection enclosure wall is by multiple white reflection barricade head and the tail phases
Company is surrounded；Step 2: provide support plate；Step 3: by biadhesive film patch and support plate；Step 4: by white reflection barricade
In patch and biadhesive film；Step 5: flip-chip is fixed to the center dummy section of white reflection enclosure wall；Step 6: falling
Gap location on cartridge chip, between flip-chip and white reflection barricade is coated with transparent glue, and toasts；It is Step 7: transparent
After drying adhesive fluorescent material is coated on transparent glue surface；So as to which the encapsulation of full wafer CSP modules is completed；Step 8: will be packaged
Full wafer CSP modules cutting-up is into single CSP LED；Step 9: biadhesive film is peeled off from support plate；It is Step 10: cutting-up is good
Single CSP LED peeled off from biadhesive film, complete CSP LED encapsulation.The production process is relatively complicated, and production efficiency
It is relatively low, it is higher to production requirement, while the quality of production can not ensure, it is difficult to realize the uniformity of product quality.
The content of the invention
Present invention solves the technical problem that it is to provide a kind of a kind of one side based on CSP encapsulating structures for improving packaging efficiency
Emitting led method for packing.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of emitting led method for packing of one side based on CSP encapsulating structures, the encapsulation step are as follows：
A) silica gel fluorescent powder film piece is installed on carrier, the silica gel fluorescent powder film piece includes diaphragm, described
Diaphragm is between silica gel fluorescent powder film piece and carrier；
B) LED chip is mounted on silica gel fluorescent powder film piece, the LED chip is inverted structure, the adjacent LED
Gap be present in chip；
C product) is subjected to high-temperature baking and reinforces operation, the baking temperature is 110 degree to 130 degree, baking time 0.5
Hour was to 1.5 hours；
D) cut using cutting equipment according to the gap being sized along LED chip, the cutting equipment is cut to
Diaphragm, the cutting equipment make adjacent LED chip cutting form Cutting Road；
E the silica gel fluorescent powder film piece cut in Cutting Road) is removed；
F product) is subjected to plasma cleaning；
G between silica colloidal point) is located at into adjacent LED chip, the dispensing height flushes with LED chip, described
Silica colloidal is filled to Cutting Road；
H product) is subjected to curing operation, the curing operation is two-period form high-temperature baking, the two-period form high-temperature baking
Including first stage and second stage, the baking temperature of the first stage is 90 degree to 110 degree, the baking of the first stage
Time is 1.5 hours to 2.5 hours, and the baking temperature of the second stage is 150 degree to 170 degree, the baking of the second stage
The roasting time is 3.5 hours to 4.5 hours；
I cutting operation to silica colloidal, the cutting equipment) are carried out along LED chip gap using cutting equipment
(5) it is cut to diaphragm；
J) product is separated, obtains the luminous CSP LED products of single one side.
The form that the application is engaged using silica gel fluorescent powder film piece and silica colloidal makes to be formed and simultaneously lighted
CSP LED products.The production method effectively increases production efficiency, ensure that production effect, while avoids the wave of resource
Take, improve production qualification rate.
It is further the B) LED chip rectangular array formula is distributed in step.
It is further that the silica colloidal is the mixture of silica gel and silica.
Further the step C) in baking temperature be 120 degree, baking time be 1 hour.
Further the step H) in the first stage baking temperature be 100 degree, baking time be 2 hours；It is described
The baking temperature of second stage is 169 degree, and baking time is 4 hours.
The beneficial effects of the invention are as follows：
1st, the production process step is simple, and easily operation, so as to reduce production requirement, realizes the reduction of production cost,
The production qualification rate of product is improved simultaneously, ensure that product quality, guarantee is provided for homogeneity of product；
2nd, the setting of the inverted structure, make the smaller of the LED chip, make optical effect be easier to match, simultaneously should
The heat sinking function lifting of chip, makes the life-span of chip also be improved, also achieves the raising of antistatic effect in addition, be applicable
In encapsulation operation, make the properties of product more stable；
3rd, step C) high-temperature baking curing operation, the connection of LED chip and silica gel fluorescent powder film piece has been effectively ensured
Effect, the influence to LED chip in follow-up Cutting Road forming process is avoided, ensure that product connective stability；
4th, rectangular array formula distribution is set, then the LED chip realizes ordered arrangement, and then ensure that having for the gap setting
Sequence, it ensure that the normalization and operating efficiency of process operation；
5th, the setting of two-period form baking, has been effectively ensured the solidification effect of product, is carried for follow-up cutting operation quality
Supply to ensure.
Brief description of the drawings
Fig. 1 is a kind of encapsulating products structure of the emitting led method for packing of one side based on CSP encapsulating structures of the present invention
Schematic diagram；
Fig. 2 is carrier in a kind of step A of the emitting led method for packing of one side based on CSP encapsulating structures of the present invention
With the attachment structure schematic diagram of silica gel fluorescent powder film piece；
Fig. 3 be a kind of emitting led method for packing of one side based on CSP encapsulating structures of the present invention step B in carrier,
The attachment structure schematic diagram of silica gel fluorescent powder film piece and LED chip；
Fig. 4 is a kind of step D of the emitting led method for packing of one side based on CSP encapsulating structures of present invention connection
Structural representation；
Fig. 5 is a kind of step E of the emitting led method for packing of one side based on CSP encapsulating structures of present invention connection
Junction structure schematic diagram；
Fig. 6 is a kind of step G of the emitting led method for packing of one side based on CSP encapsulating structures of present invention connection
Structural representation；
Fig. 7 is a kind of step I of the emitting led method for packing of one side based on CSP encapsulating structures of present invention connection
Structural representation；
In figure mark for：Carrier 1, silica gel fluorescent powder film piece 2, diaphragm 21, Cutting Road 22, LED chip 3, glue two
Silica 4, cutting equipment 5.
Embodiment
The present invention is further described with reference to the accompanying drawings and detailed description.
In process of production, staff carries out the selection of corresponding carrier 1 according to required product first and taken, and then will
Silica gel fluorescent powder film piece 2 is arranged on the carrier 1.Staff color temperature parameters and chip wave band according to needed for LED determine
Good fluorescent material model, drying forming forms silica gel fluorescent powder film piece 2 after then fluorescent material is mixed with silica gel.The silica gel fluorescence
The scope of application of powder diaphragm 2 is relatively broad, is the selection between can be achieved according to required chromaticity coordinates, reduces artificial modulation and asks
Topic, reduces job step, while ensure that the quality of production.The silica gel fluorescent powder film piece 2 has diaphragm, by diaphragm court
To carrier 1, then corresponding other end outwardly, the step A) setting connection it is as shown in Figure 2.
6th, now by step A) formed silica gel fluorescent powder film piece 2 be connected with carrier 1 after, progress LED chip 3 patch
Put.The one side of silica gel fluorescent powder film piece 2 meets a face illumination effect of LED chip 3, while realizes in production process
The restriction of the position of LED chip 3, ensure that production effect.To avoid in positive cartridge chip because electrode ties up light-emitting area so as to shadow
Luminous efficiency is rung, the application uses inverted structure.The inverted structure causes positive cartridge chip, makes what luminescent layer inspired
Light is directly sent from the another side of electrode.Flip chip technology can also be subdivided into two classes simultaneously, and one kind is in sapphire chip basis
Upper upside-down mounting, Sapphire Substrate retain, and beneficial to radiating, but current density is lifted and unobvious；It is another kind of to be inverted structure and shell
, can significantly motor current density from backing material.It is smaller that the LED chip 3 of the inverted structure accomplishes its size,
Optics is set to be easier to match, while the heat sinking function lifting of the chip, the life-span of chip is also improved, also realize in addition
The raising of antistatic effect.The inverted structure is more applicable in encapsulation operation, makes the properties of product more stable.Simultaneously should
Step B) LED chip 3 is is arranged at intervals, i.e., and there is gap in adjacent LED chip 3.To ensure the steady of subsequent cutting operation
Carry out, LED chip 3 is carried out rectangular array formula distribution by the application, then the ordered arrangement of the LED chip 3 ensure that the gap
The order of setting, it ensure that the normalization and operating efficiency of work.The step B) terminate after product arrangement effect such as Fig. 3
It is shown.To improve the connection effect of LED chip 3 and silica gel fluorescent powder film piece 2, staff is in step C) in dried using high temperature
Roasting curing operation realizes reinforcement by connection, the connection effect of LED chip and silica gel fluorescent powder film piece has been effectively ensured, after avoiding
Influence in continuous Cutting Road forming process to LED chip, ensure that product connective stability.The baking temperature be 110 degree extremely
130 degree, baking time is 0.5 hour to 1.5 hours.Then staff can carry out the selection of time and temperature according to demand, such as
Baking temperature is 120 degree, and baking time is 1 hour.High-temperature baking solidification simultaneously is it can also be provided that baking temperature is 110
Degree, baking time are 1.5 hours.
Staff is in step D) the middle gap progress cutting operation using cutting equipment 5 along LED chip 3, ensure simultaneously
The cutting equipment 5, which should be ensured that, to be cut at diaphragm 21.As shown in figure 4, the cutting equipment 5 between the LED chip 3 is settable
Set for double cuttings.Certain gap is provided between now this pair cutting, the silica gel fluorescent powder film piece is completed in now cutting
The Cutting Road 22 of strip is formed on 2.The width of the Cutting Road 22 can be adjusted according to the demand of product, while the cutting equipment
5 may be configured as single cutting mode, and Cutting Road 22 is formed using cutting twice.Because the cutting equipment 5 is cut to diaphragm 21, because
This silica gel fluorescent powder film piece 2 being located in the Cutting Road 22 separates with adjacent silica gel fluorescent powder film piece 2.Staff exists
Step E) in it can be taken out, so as to obtain having reeded basic products.The product is as shown in figure 5, adjacent LED chip 3
Between be both provided with Cutting Road 22.
For ensure subsequent handling steady progress, staff is in step F) in the said goods carry out plasma cleaning behaviour
Make, so as to avoid the presence of impurity in cutting process, be prepared for subsequent operation.Staff carries out glue as needed
The allotment of silica 4, mix so as to tie substance with adhesive by silica.The application utilizes silica gel and dioxy
SiClx is mixed to form silica colloidal 4, the stable chemical performance of the silica gel, the continuation of properties of product has been effectively ensured.Should
Silica colloidal 4 is located at by point glue equipment point between adjacent LED chip 3, so that silica colloidal 4 is by LED core
The surrounding of piece 3 is surrounded.Now Cutting Road 22 is filled by silica colloidal 4, then adjacent LED chip 3 is by glue two
Silica 4 is separated.Simultaneously to ensure product quality, the dispensing height of the gluey fluorescent material 4 should meet to flush with LED chip 3,
And its upper surface will not be had an impact, can now meet larger encirclement area.Step G) make its attachment structure such as Fig. 6 institutes
Show.
By step G) attachment structure of product that terminates of dispensing is still unstable.To ensure product quality, step H) by point
Product after cementing beam carries out carry out curing operation, and then the solidification of gluey fluorescent material 4 is carried out by high temperature.The solidification
Operate includes first stage and second stage for two-period form high-temperature baking, the two-period form high-temperature baking, the first stage
Baking temperature is 90 degree to 110 degree, and the baking time of the first stage is 1.5 hours to 2.5 hours, the second stage
Baking temperature is 150 degree to 170 degree, and the baking time of the second stage is 3.5 hours to 4.5 hours.Staff is adding
The baking temperature that the first stage can be selected during work is 100 degree, and baking time is 2 hours；The baking temperature of the second stage
Spend for 169 degree, baking time is 4 hours.Step H) setting avoid the movement of the position of silica colloidal 4, improve glue
The curing rate of shape silica 4, it is therefore prevented that the pollution to external environment condition, while the quality stability of production finished product is ensure that,
Improve production efficiency.
Step H) in curing operation make attachment structure in Fig. 6 more stable, due to existing between adjacent LED chip 3
Gap, therefore four side faces of each LED chip 3 realize the connection of silica colloidal 4.As shown in fig. 7, staff
Utilize step I) in cutting equipment 5 cut, the gap of the cutting equipment 5 along LED chip 3 is cut.Now cut
The cutting tip of equipment 5 is located among gap, avoids the damage to LED chip 3, at the same ensure that cutting terminate after the LED
All realize the parcel of silica colloidal 4 in the periphery of chip 3.
The cutting operation 5, which should ensure that, to be cut at the diaphragm of silica gel fluorescent powder film piece 2, and now staff can basis
Step J) it is separated, and then form the luminous CSP LED products in single five faces as shown in Figure 1.The CSP LED are produced
Product one end is being bonded of silica gel fluorescent powder film piece 2, surrounding is the solidification parcel of silica colloidal 4 in addition, so as to form five
Face illumination effect.The production process step is simple, easily operation, while reduce production requirement, and the production for improving product is closed
Lattice rate, ensure that product quality, realize the reduction of production cost.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., it should be included in the guarantor of the present invention
Within the scope of shield.
Claims (5)
1. the emitting led method for packing of a kind of one side based on CSP encapsulating structures, it is characterised in that the encapsulation step is as follows：
A) silica gel fluorescent powder film piece (2) is installed on carrier (1), the silica gel fluorescent powder film piece (2) includes diaphragm
(21), the diaphragm (21) is located between silica gel fluorescent powder film piece (2) and carrier (1)；
B) LED chip (3) is mounted on silica gel fluorescent powder film piece (2), the LED chip (3) is inverted structure, the phase
Gap be present in adjacent LED chip (3)；
C product) is subjected to high-temperature baking and reinforces operation, the baking temperature is 110 degree to 130 degree, and baking time is 0.5 hour
To 1.5 hours；
D) using cutting equipment (5) according to being sized being cut along the gap of LED chip (3), the cutting equipment (5) is cut
Cut to diaphragm (21), the cutting equipment (5) makes adjacent LED chip (3) cutting form Cutting Road (22)；
E the silica gel fluorescent powder film piece (2) cut in Cutting Road (22)) is removed；
F product) is subjected to plasma cleaning；
G between silica colloidal (4) point) is located at into adjacent LED chip (3), the dispensing height flushes with LED chip (3),
The silica colloidal (4) is filled to Cutting Road (22)；
H product) is subjected to curing operation, the curing operation is two-period form high-temperature baking, and the two-period form high-temperature baking includes
First stage and second stage, the baking temperature of the first stage is 90 degree to 110 degree, the baking time of the first stage
For 1.5 hours to 2.5 hours, the baking temperature of the second stage was 150 degree to 170 degree, during the baking of the second stage
Between be 3.5 hours to 4.5 hours；
I cutting operation to silica colloidal (4), the cutting) are carried out along LED chip (3) gap using cutting equipment (5)
Equipment (5) is cut to diaphragm (21)；
J) product is separated, obtains the luminous CSP LED products of single one side.
2. a kind of emitting led method for packing of one side based on CSP encapsulating structures according to claim 1, its feature exist
In the B) LED chip (3) rectangular array formula is distributed in step.
3. a kind of emitting led method for packing of one side based on CSP encapsulating structures according to claim 1, its feature exist
In the silica colloidal (4) is the mixture of silica gel and silica.
4. a kind of emitting led method for packing of one side based on CSP encapsulating structures according to claim 1, its feature exist
In the step C) in baking temperature be 120 degree, baking time be 1 hour.
5. a kind of emitting led method for packing of one side based on CSP encapsulating structures according to claim 1, its feature exist
In the step H) in the first stage baking temperature be 100 degree, baking time be 2 hours；The baking temperature of the second stage
Spend for 169 degree, baking time is 4 hours.
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| CN201710576013.7A CN107591468A (en) | 2017-07-14 | 2017-07-14 | A kind of emitting led method for packing of one side based on CSP encapsulating structures |
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| CN201710576013.7A CN107591468A (en) | 2017-07-14 | 2017-07-14 | A kind of emitting led method for packing of one side based on CSP encapsulating structures |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281531A (en) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | A kind of CSP LED encapsulation methods |
| CN109817768A (en) * | 2018-11-09 | 2019-05-28 | 海迪科（南通）光电科技有限公司 | A kind of separation method of CSP light source |
| CN110473948A (en) * | 2019-07-29 | 2019-11-19 | 厦门多彩光电子科技有限公司 | A kind of LED encapsulation method and encapsulating structure |
| CN111106227A (en) * | 2018-10-25 | 2020-05-05 | 江苏罗化新材料有限公司 | Simple thin film CSP packaging structure and method |
| CN111180323A (en) * | 2018-11-09 | 2020-05-19 | 海迪科（南通）光电科技有限公司 | Cutting method of CSP light source |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN117317078A (en) * | 2023-11-28 | 2023-12-29 | 天津德高化成新材料股份有限公司 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
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| CN106252475A (en) * | 2016-09-21 | 2016-12-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source and manufacture method thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281531A (en) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | A kind of CSP LED encapsulation methods |
| CN111106227A (en) * | 2018-10-25 | 2020-05-05 | 江苏罗化新材料有限公司 | Simple thin film CSP packaging structure and method |
| CN109817768A (en) * | 2018-11-09 | 2019-05-28 | 海迪科（南通）光电科技有限公司 | A kind of separation method of CSP light source |
| CN111180323A (en) * | 2018-11-09 | 2020-05-19 | 海迪科（南通）光电科技有限公司 | Cutting method of CSP light source |
| CN109817768B (en) * | 2018-11-09 | 2021-08-27 | 海迪科（南通）光电科技有限公司 | CSP light source separation method |
| CN111180323B (en) * | 2018-11-09 | 2022-12-02 | 海迪科（南通）光电科技有限公司 | Cutting method of CSP light source |
| CN110473948A (en) * | 2019-07-29 | 2019-11-19 | 厦门多彩光电子科技有限公司 | A kind of LED encapsulation method and encapsulating structure |
| CN110473948B (en) * | 2019-07-29 | 2020-09-01 | 厦门多彩光电子科技有限公司 | LED packaging method and packaging structure |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN117317078A (en) * | 2023-11-28 | 2023-12-29 | 天津德高化成新材料股份有限公司 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
| CN117317078B (en) * | 2023-11-28 | 2024-04-19 | 天津德高化成新材料股份有限公司 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
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| CB03 | Change of inventor or designer information |
Inventor after: Li Wenhai Inventor before: Li Duohai |
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| CB03 | Change of inventor or designer information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180116 |
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| RJ01 | Rejection of invention patent application after publication |