CN108281531A - A kind of CSP LED encapsulation methods - Google Patents
A kind of CSP LED encapsulation methods Download PDFInfo
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- CN108281531A CN108281531A CN201810055498.XA CN201810055498A CN108281531A CN 108281531 A CN108281531 A CN 108281531A CN 201810055498 A CN201810055498 A CN 201810055498A CN 108281531 A CN108281531 A CN 108281531A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000005538 encapsulation Methods 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 239000003292 glue Substances 0.000 claims abstract description 40
- 210000004276 hyalin Anatomy 0.000 claims abstract description 17
- 239000012528 membrane Substances 0.000 claims abstract description 17
- 239000004593 Epoxy Substances 0.000 claims abstract description 14
- 239000004033 plastic Substances 0.000 claims abstract description 13
- 229920003023 plastic Polymers 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 238000000465 moulding Methods 0.000 claims abstract description 8
- 239000002313 adhesive film Substances 0.000 claims abstract description 5
- 238000005520 cutting process Methods 0.000 claims description 44
- 239000000843 powder Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000012536 packaging technology Methods 0.000 abstract description 8
- 238000003825 pressing Methods 0.000 abstract description 5
- -1 step 6 Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of CSP LED encapsulation methods, including step 1, prepare fluorescent film or hyaline membrane, step 2, fixture support plate is provided, step 3, layer of transparent adhesive film is set on fixture support plate, fluorescent film or hyaline membrane are bonded with clear, viscous film, step 4, fixed upside-down mounting crystal covered chip, step 5, it is coated using epoxy molding plastic white glue, step 6, product to having coated white glue toasts, step 7, the product full wafer completed after baking is carried out second to cut, step 8, pour mask is carried out to LED product, the application simplifies packaging technology, upside-down mounting crystal covered chip is laid on fluorescent film again by first placing fluorescent film, so that the application need not be in chip surface pressing mold fluorescent glue, greatly simplifie production technology.
Description
Technical field
The present invention relates to LED encapsulation fields, more particularly to a kind of CSP LED encapsulation methods.
Background technology
The full name of CSP is Chip Scale Package, and Chinese means wafer-level package device.
In recent years, with LED (light emitting diode) device material, chip technology and encapsulation technology etc. research not
The gradual ripe diversification with fluorescent powder paint-on technique of disconnected progress, especially crystal covered chip, a kind of new wafer-level package CSP
Technology is come into being.Encapsulation mainly has five faces to shine and the luminous two kinds of packing forms of single side, wherein five faces shine, light extraction efficiency is high.
There are problems for existing packaging technology, for example, existing technology needs first to apply EMC white glue around flip-chip
(epoxy film plastics white glue), then in chip surface pressing mold fluorescent glue, packaging technology is extremely complex, existing CSP LED are antistatic
Energy force difference, does not protect LED to act on, therefore how to simplify packaging technology, improves the antistatic effect of CSP LED, is this field
The problem of urgent need to resolve.
Invention content
The technical problem to be solved by the present invention is to provide a kind of packaging technology is simpler, one with good antistatic effect
Kind CSP LED encapsulation methods.
The technical solution adopted by the present invention to solve the technical problems is：A kind of CSP LED encapsulation methods, including upside-down mounting are covered
Brilliant chip, fluorescent film and epoxy molding plastic white glue, and follow the steps below：
Silica gel is particularly mixed group by step 1, preparation fluorescent film or hyaline membrane, the fluorescent film with a variety of fluorescent powders
At；The hyaline membrane particularly silica gel,
Step 2 provides fixture support plate,
Layer of transparent adhesive film is arranged in step 3 on fixture support plate, and fluorescent film or hyaline membrane are pasted with clear, viscous film
It closes,
Upside-down mounting crystal covered chip is fixed on fluorescent film or transparent diaphragm area by step 4 by array,
Step 5 is coated using gap of the epoxy molding plastic white glue between adjacent upside-down mounting crystal covered chip,
Step 6 toasts the product for having coated white glue,
The product full wafer completed after baking is carried out second of cutting by step 7, to cut into the LED product of individual particle,
Step 8 carries out pour mask to LED product, by LED product pour mask to silicone protective film, to tear clear, viscous film off.
The application simplifies packaging technology, and upside-down mounting crystal covered chip is laid on fluorescent film again by first placing fluorescent film,
So that the application need not greatly simplifie production technology in chip surface pressing mold fluorescent glue.
It is further：Fixture support plate is preheated after having placed upside-down mounting crystal covered chip in the step 4, the step
Further include step between rapid 4 and step 5：
Step 4.1 and then the gap between adjacent upside-down mounting crystal covered chip carry out the by the specification of single LED product
Primary cutting so that clear, viscous film and fluorescent film or hyaline membrane are cut off,
Zener diode is fixed on beside single upside-down mounting crystal covered chip by step 4.2 by image recognition technology, specifically
It is that carrying out image recognition to upside-down mounting crystal covered chip positions, and Zener diode is placed according to the position of upside-down mounting crystal covered chip；
Further include step between the step 5 and step 6：
Step 5.1, using gap use of the epoxy molding plastic white glue between upside-down mounting crystal covered chip and Zener diode into
Row coating.
It is further：Further include step between the step 4.2 and step 5：
The upside-down mounting crystal covered chip with Zener diode after step 4.3 cuts first time carries out plasma cleaning；
Further include step between the step 7 and step 8：
Step 7.1 removes flash to the LED product after the completion of second of cutting.
It is further：The Zener diode is set close to side short side in the upside-down mounting crystal covered chip, the Zener two
Pole pipe is smaller than 0.1 μm apart from upside-down mounting crystal covered chip.
It is further：Fixture support plate keeps heated condition when the step 5 and step 5.1 coating epoxy film plastics white glue
It is completed to coating.
It is further：Fixture support plate keeps heated condition to having coated when the step 5 coating epoxy film plastics white glue
At；
Further include step between the step 4 and step 5：
Step 4.3.1, the upside-down mounting crystal covered chip of well cutting is subjected to plasma cleaning.
It is further：Second of cutting mode in the step 7 is particularly cut using press-down type, wherein under
Knife speed is 2.4-3.5sec/ times.
It is further：The press-down type cutting particularly, pushing cutting is carried out using the wolfram steel knife of 110mm wide.
It is further：By controlling the method for fluorescent film chromaticity coordinates as the optics of fluorescent film in order to control in the step 1
The proportioning of thickness and fluorescent powder.
The beneficial effects of the invention are as follows：The application simplifies packaging technology, by first placing fluorescent film again on fluorescent film
Face is laid with upside-down mounting crystal covered chip so that the application need not greatly simplifie production technology in chip surface pressing mold fluorescent glue.
Further, since being provided with Zener diode beside upside-down mounting crystal covered chip so that the application has fabulous antistatic effect.This
Outside, fixture support plate is heated so that during coating EMC white glue, the mobility of EMC white glue is more preferable, and when coating is more equal
It is even.In addition, being cut using press-down type, and cutting speed is made to be maintained at 2.4-3.5sec/ times so that the application is ensureing yields
While can also ensure process velocity.By the proportioning for controlling the optical thickness and fluorescent powder of fluorescent film so that chromaticity coordinates
Scattered band is can be controlled in 0.015 range.
Description of the drawings
Fig. 1 is that clear, viscous film and fluorescent film schematic diagram are attached on fixture support plate.
Fig. 2 is that upside-down mounting crystal covered chip schematic diagram is placed on fluorescent film.
Fig. 3 is first time cutting position schematic diagram.
Fig. 4 is that single LED product coats white glue schematic diagram.
Fig. 5 is second of cutting schematic diagram.
Fig. 6 is the finished product schematic diagram after reverse mould.
In figure label for：Fixture support plate 1, clear, viscous film 2, fluorescent film 3, upside-down mounting crystal covered chip 4, first time cutting position
5, Zener diode 6, EMC white glue 7, silicone protective film 8, second of cutting position 9.
Specific implementation mode
The present invention is further described with reference to the accompanying drawings and detailed description.
The application provides a kind of a kind of specific embodiment one of CSP LED encapsulation methods with Zener diode 6.
Embodiment one
A kind of CSP LED encapsulation methods, including upside-down mounting crystal covered chip 4, fluorescent film 3 and epoxy molding plastic white glue 7 and neat
Receive diode 6, it should be noted that the epoxy molding plastic white glue 7 i.e. hereafter EMC white glue 7 described in, and according to following
Step carries out：
Silica gel is particularly mixed group by step 1, preparation fluorescent film 3 or hyaline membrane, the fluorescent film 3 with a variety of fluorescent powders
At；The hyaline membrane particularly silica gel, the application adjust this by the proportioning of the thickness and fluorescent powder that control fluorescent film 3
Apply for the scattered band of chromaticity coordinates, the fluorescent powder includes bloom, rouge and powder or green powder commonly used in the art, for example, for showing
When showing device backlight or flash lamp, it usually needs need the X scope controls of chromaticity coordinates in 0.25-0.30, Y scope controls exist
0.26-0.29, in this application, by being 70-90% by red fluorescence powder and green emitting phosphor ratio：When 10-30%, Y models
0.26-0.29 can be met by enclosing value, and when the optical thickness of fluorescent film 3 is in 60-100um, chromaticity coordinates X values can meet 0.25-
0.30, and scattered band is can be controlled in ± 0.015.
Step 2 provides fixture support plate 1, and the fixture support plate 1 is common fixture support plate 1 in LED encapsulation fields.
Step 3, as shown in Figure 1, layer of transparent adhesive film 2 is arranged on fixture support plate 1, by fluorescent film 3 or hyaline membrane with
Clear, viscous film 2 is bonded, and the clear, viscous film 2 can be polyurethane double faced adhesive tape or silica gel double faced adhesive tape, pass through clear, viscous film 2
Fluorescent film 3 is fixed on fixture support plate 1.
Step 4, as shown in Fig. 2, upside-down mounting crystal covered chip 4 is fixed on fluorescent film 3 or transparent diaphragm area by array, in this Shen
Please in, upside-down mounting crystal covered chip 4 is placed by 1800-2500ea, in the process, can be right after having placed upside-down mounting crystal covered chip
Fixture support plate 1 is preheated, and preheating time is 2-3 hours, is prepared for follow-up cutting fluorescent film 3.
Step 4.1 and then the gap between adjacent upside-down mounting crystal covered chip 4 carry out the by the specification of single LED product
Primary cutting, wherein first time cutting position 5 are as shown in figure 3, by first time cutting so that clear, viscous film 2 and fluorescent film
3 or hyaline membrane be cut off, in this step, upside-down mounting crystal covered chip 4 and fluorescent film 3 cut into needed for finished product by first time cutting
Specification, in order to subsequent installation Zener diode 6, to improve placement precision.
Step 4.2, as shown in figure 4, Zener diode 6 is fixed on single upside-down mounting crystal covered chip by image recognition technology
4 sides particularly carry out image recognition to upside-down mounting crystal covered chip 4 and position, put according to the position of upside-down mounting crystal covered chip 4
Zener diode 6 is set, since the size of upside-down mounting crystal covered chip 4 is more than the size of Zener diode 6, is taken to upside-down mounting flip
Chip 4 carries out image recognition positioning, by the placement Zener diode 6 of image recognition accurate positioning, ensures cutting accuracy.At this
In application, Zener diode 6 is close to the side short side of upside-down mounting crystal covered chip 4, and Zener diode 6 is apart from upside-down mounting crystal covered chip 4
Distance be less than 0.1 μm.
The upside-down mounting crystal covered chip 4 with Zener diode 6 of well cutting is carried out plasma cleaning by step 4.3, is passed through
Ion Cleaning can remove 4 surface smut of Zener diode 6 and upside-down mounting crystal covered chip.
Step 5, as shown in figure 4, being coated using gap of the EMC white glue 7 between adjacent upside-down mounting crystal covered chip 4.
Step 5.1, as shown in figure 4, gap using EMC white glue 7 between upside-down mounting crystal covered chip 4 and Zener diode 6
Using being coated.
Fixture support plate 1 remains heated condition during above-mentioned steps 5 and step 5.1 coat white glue 7 EMC, leads to
Crossing heated jig support plate 1 can make the mobility in coating of EMC white glue 7 more preferable, therefore it is also more equal to coat white glue out
It is even.
Step 6 toasts the product for having coated white glue.
The product full wafer completed after baking is carried out second of cutting, second of cutting position 9 such as Fig. 5 institutes by step 7
Show, is cut by second, the application is cut into the LED product with Zener diode of individual particle, specific second
There are two types of embodiments for the cutting method of cutting, the first rotates stepping cutting side for skive blade commonly used in the art
Formula is cut by controlling feed velocity in 15mm/sec to 40mm/sec, but rotation stepping cutting mode is used to exist
Ensure that cutting fraction defective is less than 0.1%, speed of production is excessively slow while cutting tolerance is in the range of ± 30 μm, cannot be satisfied life
Production demand, fraction defective can also greatly increase if speed of production to be improved；
Therefore it is cut in this application using second of cutting mode, second of cutting mode particularly, uses
The tungsten steel blade of 110mm wide carries out press-down type cutting, cuts speed control at 2.4sec/ times to 3.0sec/ times, cutting is bad
While rate can be controlled in 0.1%, speed of production can also meet actual production demand, and cutting tolerance can also be controlled in ± 30um
In the range of.
Step 7.1 removes flash to the LED product after the completion of second of cutting.
Step 8 carries out pour mask to LED product, by LED product pour mask to silicone protective film 8, to tear clear, viscous film off
2, particularly, silicone protective film 8 is placed on heating in vacuum platform and places 10-30s, then by the fluorescent film 3 of fixture support plate 1
Upward, silicone protective film 8 is affixed on fixture support plate 1 for direction, is rolled by idler wheel LED product and fluorescent film 3 conforming to silicon
Glue protective film 8, and tear fixture support plate 1 and clear, viscous film 2 off, to obtain final products as shown in FIG. 6.
Step 9 carries out testing package to the LED product after reverse mould, completes encapsulation.
The application simplifies packaging technology, and upside-down mounting crystal covered chip is laid on fluorescent film 3 again by first placing fluorescent film 3
4, finally reverse mould is carried out in the LED to well cutting so that the application need not greatly simplify in chip surface pressing mold fluorescent glue
Production technology.Further, since being provided with Zener diode 6 on 4 side of upside-down mounting crystal covered chip so that the application has fabulous
Antistatic effect.In addition, being heated to fixture support plate 1 so that during coating EMC white glue 7, the mobility of EMC white glue 7 is more
Well, more uniform when coating.In addition, being cut using press-down type, and cutting speed is made to be maintained at 2.4sec/ times to 3.5sec/ times,
So that the application can also ensure process velocity while ensureing yields.By controlling the optical thickness of fluorescent film 3 and glimmering
The proportioning of light powder so that the scattered band of chromaticity coordinates is can be controlled in 0.015 range.
In addition, the application also provides a kind of a kind of embodiment of CSP LED encapsulation methods without Zener diode 6
Two.
Embodiment two
A kind of CSP LED encapsulation methods, including upside-down mounting crystal covered chip, fluorescent film and EMC white glue 7, and according to the following steps
It carries out：
Silica gel is particularly mixed group by step 1, preparation fluorescent film 3 or hyaline membrane, the fluorescent film 3 with a variety of fluorescent powders
At；The hyaline membrane particularly silica gel.
Step 2 provides fixture support plate 1, and the fixture support plate 1 is common fixture support plate 1 in LED encapsulation fields.
Layer of transparent adhesive film 2 is arranged in step 3 on fixture support plate 1, by fluorescent film 3 or hyaline membrane and clear, viscous film 2
Fitting, upside-down mounting crystal covered chip 4 are placed by 1800-2500ea, in the process, can be right after having placed upside-down mounting crystal covered chip
Fixture support plate 1 is preheated, and preheating time is 2-3 hours, is prepared for follow-up cutting fluorescent film 3.
Upside-down mounting crystal covered chip 4 is fixed on fluorescent film 3 or transparent diaphragm area by step 4 by array.
Step 4.3.1, plasma cleaning is carried out to upside-down mounting crystal covered chip 4.
Step 5 is coated using gap of the EMC white glue 7 between adjacent upside-down mounting crystal covered chip 4, in coating procedure
In, fixture support plate 1 keeps heated condition.
Step 6 toasts the product for having coated white glue.
The product full wafer completed after baking is carried out second of cutting by step 7, to cut into the LED product of individual particle.
Step 7.1 removes flash to the LED product after the completion of second of cutting.
Step 8 carries out pour mask to LED product, by LED product pour mask to silicone protective film 8, to tear clear, viscous film off
2。
Step 9 carries out testing package to the LED product after reverse mould, completes encapsulation.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the present invention
Within the scope of shield.
Claims (9)
1. a kind of CSP LED encapsulation methods, it is characterised in that：Including upside-down mounting crystal covered chip (4), fluorescent film (3) and epoxy mold
Expect white glue (7), and follows the steps below：
Silica gel is particularly mixed group by step 1, preparation fluorescent film (3) or hyaline membrane, the fluorescent film (3) with a variety of fluorescent powders
At；The hyaline membrane particularly silica gel,
Step 2 provides fixture support plate (1),
Layer of transparent adhesive film (2) is arranged in step 3 on fixture support plate (1), by fluorescent film (3) or hyaline membrane and clear, viscous
Film (2) is bonded,
Upside-down mounting crystal covered chip (4) is fixed on fluorescent film (3) or transparent diaphragm area by step 4 by array,
Step 5 is coated using gap of the epoxy molding plastic white glue (7) between adjacent upside-down mounting crystal covered chip (4),
Step 6 toasts the product for having coated white glue,
The product full wafer completed after baking is carried out second of cutting by step 7, to cut into the LED product of individual particle,
Step 8 carries out pour mask to LED product, by LED product pour mask to silicone protective film, to tear clear, viscous film (2) off.
2. a kind of CSP LED encapsulation methods as described in claim 1, it is characterised in that：When having placed upside-down mounting in the step 4
Fixture support plate (1) is preheated after crystal covered chip (4), further includes step between the step 4 and step 5：
Step 4.1 and then the gap between adjacent upside-down mounting crystal covered chip (4) carry out first by the specification of single LED product
Secondary cutting so that clear, viscous film (2) and fluorescent film (3) or hyaline membrane are cut off,
Zener diode (6) is fixed on beside single upside-down mounting crystal covered chip (4) by step 4.2 by image recognition technology, specifically
, image recognition is carried out to upside-down mounting crystal covered chip (4) and is positioned, Zener is placed according to the position of upside-down mounting crystal covered chip (4)
Diode (6)；
Further include step between the step 5 and step 6：
Step 5.1 is made using gap of the epoxy molding plastic white glue (7) between upside-down mounting crystal covered chip (4) and Zener diode (6)
With being coated.
3. a kind of CSP LED encapsulation methods as claimed in claim 2, it is characterised in that：Between the step 4.2 and step 5
It further include step：
The upside-down mounting crystal covered chip (4) with Zener diode (6) after step 4.3 cuts first time carries out plasma cleaning；
Further include step between the step 7 and step 8：
Step 7.1 removes flash to the LED product after the completion of second of cutting.
4. a kind of CSP LED encapsulation methods as claimed in claim 2, it is characterised in that：The Zener diode (6) close to
The side short side of the upside-down mounting crystal covered chip (4), spacing of the Zener diode (6) apart from upside-down mounting crystal covered chip (4) are small
In 0.1 μm.
5. a kind of CSP LED encapsulation methods as claimed in claim 2, it is characterised in that：The step 5 and step 5.1 coating
When epoxy film plastics white glue fixture support plate (1) keep heated condition to coat complete.
6. a kind of CSP LED encapsulation methods as described in claim 1, it is characterised in that：The step 5 coats epoxy film plastics
When white glue fixture support plate (1) keep heated condition to coat complete；
Further include step between the step 4 and step 5：
Step 4.3.1, the upside-down mounting crystal covered chip (4) of well cutting is subjected to plasma cleaning.
7. a kind of CSP LED encapsulation methods as described in claim 1, it is characterised in that：Second of cutting in the step 7
Mode particularly, is cut using press-down type, wherein it is 2.4-3.5sec/ times to cut speed.
8. a kind of CSP LED encapsulation methods as claimed in claim 7, it is characterised in that：The press-down type is cut particularly,
Pushing cutting is carried out using the wolfram steel knife of 110mm wide.
9. a kind of CSP LED encapsulation methods as described in claim 1, it is characterised in that：By controlling fluorescence in the step 1
The method of film (3) chromaticity coordinates is the proportioning of the optical thickness and fluorescent powder of fluorescent film (3) in order to control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810055498.XA CN108281531A (en) | 2018-01-19 | 2018-01-19 | A kind of CSP LED encapsulation methods |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810055498.XA CN108281531A (en) | 2018-01-19 | 2018-01-19 | A kind of CSP LED encapsulation methods |
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| Publication Number | Publication Date |
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| CN108281531A true CN108281531A (en) | 2018-07-13 |
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| CN111106227A (en) * | 2018-10-25 | 2020-05-05 | 江苏罗化新材料有限公司 | Simple thin film CSP packaging structure and method |
| CN111867223A (en) * | 2020-05-06 | 2020-10-30 | 合肥新汇成微电子有限公司 | Inner pin jointing machine pressfitting platform ion air gun fixed bolster |
| CN113764547A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Manufacturing method of Mini-LED device |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
| CN115448250A (en) * | 2022-09-28 | 2022-12-09 | 苏州硕贝德通讯技术有限公司 | MEMS manufacturing process of PCB and ceramic plate |
| CN117317078A (en) * | 2023-11-28 | 2023-12-29 | 天津德高化成新材料股份有限公司 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
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Application publication date: 20180713 |