CN117317078A - White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof - Google Patents
White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof Download PDFInfo
- Publication number
- CN117317078A CN117317078A CN202311597930.5A CN202311597930A CN117317078A CN 117317078 A CN117317078 A CN 117317078A CN 202311597930 A CN202311597930 A CN 202311597930A CN 117317078 A CN117317078 A CN 117317078A
- Authority
- CN
- China
- Prior art keywords
- film
- white light
- fluorescent
- preparation
- light csp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 238000005549 size reduction Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000002390 adhesive tape Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000003698 laser cutting Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000012943 hotmelt Substances 0.000 claims description 22
- 108010025899 gelatin film Proteins 0.000 claims description 19
- 239000000741 silica gel Substances 0.000 claims description 19
- 229910002027 silica gel Inorganic materials 0.000 claims description 19
- 239000007787 solid Substances 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 11
- 239000004831 Hot glue Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000002313 adhesive film Substances 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 238000004806 packaging method and process Methods 0.000 abstract description 9
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 8
- 239000003292 glue Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention relates to the field of semiconductor packaging, in particular to a white light CSP (chip size reduction) preparation method applicable to vertical chips and application thereof. The white light CSP preparation method suitable for the vertical chip comprises the following steps: (1) preparation of a fluorescent base film: taking a fluorescent film with the size being cut down, and arranging laser cutting vertical chip bonding pad sites in the central area of the fluorescent film; (2) white light CSP assembly: adhering the prepared fluorescent substrate film to a double-sided adhesive tape, and inserting a vertical chip into the fluorescent substrate film through a bonding pad site; (3) Cutting the fluorescent substrate film, and removing the double-sided tape to obtain the white light CSP. The white light CSP preparation method suitable for the vertical chip not only can realize the simplicity, convenience and high efficiency of the preparation method, but also can further improve the technical problem of poor color temperature concentration caused by the traditional dispensing encapsulation method.
Description
Technical Field
The invention relates to the field of semiconductor packaging, in particular to a white light CSP (chip size reduction) preparation method applicable to vertical chips and application thereof.
Background
In recent years, with the increasing demand and demand for electronic products, semiconductor technology, and in particular, packaging technology for semiconductors, has received very extensive attention and intensive research. CSP (chip scale package) technology has evolved in this context, including vertical chip package structures and methods.
Most of the conventional vertical chip packaging methods are die bonding and wire bonding (die bonding), and packaging is performed by a glue dispensing encapsulation method, so that the method is relatively simple to operate, but in the process of glue dispensing encapsulation, glue is poured into a needle cylinder to be extruded onto the surface of a chip, and the glue can be precipitated along with time, but the color temperature concentration of a product is poor, and the structural stability is poor. Chinese patent CN202310143815.4 provides a CSP packaging structure of a forward-mounted LED chip and a preparation method thereof, and states that the CSP packaging structure prepared by the CSP packaging structure can realize high-efficiency preparation of CSP light sources by arranging crystal bonding wires on a substrate, and has the advantages of convenient combination, flexible use and high preparation efficiency. However, the method only adopts an improved dispensing and encapsulating method, and the main technical effect is to improve the preparation efficiency, but the technical problem of poor color temperature concentration of the product caused by the dispensing and encapsulating method is not solved.
Therefore, in order to solve the above problems, the present application provides a new white light CSP preparation method suitable for vertical chips.
Disclosure of Invention
In order to solve the above problems, the first aspect of the present invention provides a method for preparing white light CSP suitable for vertical chips, comprising the steps of: (1) preparation of a fluorescent base film: taking a fluorescent film with the size being cut down, and arranging laser cutting vertical chip bonding pad sites in the central area of the fluorescent film; (2) white light CSP assembly: adhering the prepared fluorescent substrate film to a double-sided adhesive tape, and inserting a vertical chip into the fluorescent substrate film through a bonding pad site; (3) Cutting the fluorescent substrate film, and removing the double-sided tape to obtain the white light CSP.
The first aspect of the present invention provides a method for preparing white light CSP suitable for vertical chips, comprising the steps of: (1) preparation of a fluorescent base film: arranging laser cutting fluorescent films with the same shape and size in the central area of the fluorescent film according to the shape and size of a bonding pad on a chip, and exposing hollowed-out bonding pad sites of the vertical chip to obtain the fluorescent film; (2) white light CSP assembly: setting a double-sided tape on the temporary carrier, setting a fluorescent base film on the double-sided tape, and embedding bonding pads on the chip into bonding pad sites cut in advance; (3) Finally, cutting the fluorescent substrate film around each embedded chip, and removing the double-sided tape to obtain the white light CSP.
As a preferable scheme, the thickness of the fluorescent film is 120-180 μm; the thickness of the fluorescent base film is consistent with that of the fluorescent film.
As a preferable scheme, the thickness of the fluorescent film is 140-160 μm; the thickness of the fluorescent base film is consistent with that of the fluorescent film.
As a preferable mode, the fluorescent film is any one of hot melt adhesive films.
As a preferable scheme, the hot-melt adhesive film is any one of a solid silica gel film, a semi-solid hot-melt silica gel film and a liquid hot-melt silica gel film.
As a preferable scheme, the hot melt adhesive film is a semi-solid hot melt silica gel film.
As a preferable scheme, the average viscosity of the semi-solid hot-melt silica gel film and the liquid hot-melt silica gel film is 10000-15000 mPa.s, and the testing temperature is 50 ℃.
As a preferable scheme, the average viscosity of the semi-solid hot-melt silica gel film and the liquid hot-melt silica gel film is 10000-11000 mPa.s, and the testing temperature is 50 ℃.
As a preferable scheme, the average viscosity of the semi-solid hot-melt silica gel film and the liquid hot-melt silica gel film is 10000 mPa.s, and the testing temperature is 50 ℃.
As a preferable scheme, the step (2) further comprises a vacuum baking step: and carrying out vacuum baking on the assembled white light CSP under the baking conditions of 1-5 KPa, 160-180 ℃ for 3-5 hours.
As a preferred embodiment, the baking conditions are 2.5KPa,165℃for 3 hours.
As a preferred embodiment, the optical dicing of the pad sites of the vertical chip in the step (1) is consistent with the shape and size of the pads on the vertical chip.
As a preferable scheme, the double-sided adhesive tape is any one of a double-sided UV adhesive tape, a double-sided pyrolytic adhesive tape and a double-sided heat-resistant adhesive tape.
As a preferred embodiment, the double-sided adhesive tape is a double-sided UV adhesive tape.
In this application, through adopting the compound scheme of above-mentioned ingenious pad position and double-sided tape, provide a novel CSP encapsulation scheme and avoided the relatively poor problem of colour temperature concentration degree that current point glue encapsulation can appear. Through cutting of bonding pad site and the nesting of chip bonding pad together with the fixation effect of double faced adhesive tape, can directly encapsulate the chip through the mode of hot melt bonding in the assembly process, need not use the mode of point to wait for the diffusion and the sediment of point glue, thereby avoid the various quality problems that the sediment that appear in the diffusion process of point glue and lead to.
The second aspect of the present invention provides a white light CSP obtained by the above-mentioned method for producing a white light CSP suitable for use in a vertical chip.
The third aspect of the present invention provides an application of the above-mentioned white light CSP preparation method suitable for vertical chips, including an application of the white light CSP preparation method in a white light CSP device preparation method with high power and high structural stability.
The beneficial effects are that:
1. compared with the existing dispensing encapsulation method, the white light CSP preparation method suitable for the vertical chip is a novel encapsulation preparation method and has the advantages of being simple in operation, flexible in use, high in preparation efficiency and the like.
2. The white light CSP preparation method suitable for the vertical chip not only can realize the simplicity, convenience and high efficiency of the preparation method, but also can further improve the technical problem of poor color temperature concentration caused by the traditional dispensing encapsulation method.
3. The white light CSP preparation method suitable for the vertical chip has the characteristics of strong processability and excellent self stability, and can ensure that the white light CSP can still maintain excellent dimensional stability in a long-time carrier transportation process.
4. According to the white light CSP preparation method suitable for the vertical chip, through cutting of the bonding pad sites, nesting of the bonding pads of the chip and fixing of the double-sided adhesive, the chip can be directly packaged in a hot melt bonding mode in the assembly process, a dispensing mode is not used, and diffusion and precipitation of dispensing are achieved, so that various quality problems caused by uneven precipitation in the dispensing diffusion process are avoided.
5. The white light CSP preparation method suitable for the vertical chip provides a brand-new thought for the packaging method of the vertical chip, can avoid the technical problems of the prior packaging technology in the packaging process, thereby realizing a smart and stable packaging structure and having very excellent market prospect.
Drawings
Fig. 1 is a flow chart showing the steps of a method for preparing white light CSP of the vertical chip.
Fig. 2 is a schematic structural diagram of a fluorescent substrate film in the preparation process of the white CSP of example 1 of the present application.
Fig. 3 is a schematic structural diagram of a vertical chip in the process of preparing a white CSP of embodiment 1 of the present application.
Fig. 4 is a schematic diagram of an assembly structure of a white CSP in the process of preparing a white CSP of example 1 of the present application.
Fig. 5 is a schematic diagram of the structure of the independent white light CSP finally obtained in example 1 of the present application.
In the figure:
1-fluorescent film, 2-vertical chip bonding pad site, 3-double-sided tape, 4-vertical chip, 5-bonding pad.
Detailed Description
Example 1
Embodiment 1 in a first aspect provides a method for preparing white light CSP suitable for vertical chips, as shown in fig. 1, the steps include: (1) preparation of a fluorescent base film: arranging laser cutting fluorescent films with the same shape and size in the central area of the fluorescent film according to the shape and size of a bonding pad on a chip, and exposing hollowed-out bonding pad sites of the vertical chip to obtain the fluorescent film; (2) white light CSP assembly: setting a double-sided tape on the temporary carrier, setting a fluorescent base film on the double-sided tape, and embedding bonding pads on the chip into bonding pad sites cut in advance; (3) Finally, cutting the fluorescent substrate film around each embedded chip, and removing the double-sided tape to obtain the white light CSP.
The thickness of the fluorescent film is 150 μm; the thickness of the fluorescent base film is consistent with that of the fluorescent film.
The hot melt adhesive film is a semisolid hot melt silica gel film, the average viscosity of the semisolid hot melt silica gel film is 10000 mPa.s, and the testing temperature is 50 ℃.
The step (2) further comprises a vacuum baking step: the assembled white CSP was vacuum baked at 2.5KPa,165℃for 3 hours.
The optical cutting of the vertical chip pad sites in step (1) corresponds to the shape and size of the pads on the vertical chip.
The double-sided adhesive tape is a double-sided UV adhesive tape purchased from Dongguan, hefeng New Material technology Co., ltd.
The structure of the fluorescent base film is shown in fig. 2, the fluorescent film 1 and the cut-out vertical chip pad sites 2. The structure of the chip is shown in fig. 3 to include a vertical chip 4 and two pads 5 on the vertical chip 4.
In the process of preparing the package, as shown in fig. 4, the double-sided tape 3 is positioned at the bottommost part, and the vertical chip 4 is embedded into the vertical chip pad site 2, so as to form the packaged package structure. Then dicing is performed around the individual chips, and the resulting individual white light CSP structure includes phosphor film 1, vertical chips 4, and pads 5 as shown in fig. 5.
Example 2
The specific implementation of this example is the same as example 1, except that: the thickness of the fluorescent film was 160. Mu.m
Example 3
The specific implementation of this example is the same as example 1, except that: the average viscosity of the semi-solid hot melt silica gel film is 10500 mPas, and the testing temperature is 50 ℃.
Example 4
The specific implementation of this example is the same as example 1, except that: the average viscosity of the semi-solid hot-melt silica gel film is 11000 mPas, and the testing temperature is 50 ℃.
Comparative example 1
The specific embodiment of this comparative example is the same as example 1, except that: the average viscosity of the semi-solid hot-melt silica gel film is 20000 mPas, and the testing temperature is 50 ℃.
Comparative example 2
The specific embodiment of this comparative example is the same as example 1, except that: the average viscosity of the semi-solid hot melt silica gel film is 6000 mPas, and the testing temperature is 50 ℃.
Comparative example 3
The specific embodiment of this comparative example is the same as example 1, except that: the semi-solid hot-melt silica gel film has an average viscosity of 40000 mPas and a test temperature of 50 ℃.
Comparative example 4
The specific embodiment of this comparative example is the same as example 1, except that: the baking condition is 1KPa,150 ℃ and 3 hours.
Evaluation of Performance
Wafer thrust: the testing method comprises the following steps: the glass plate is stuck with a double-sided UV film (purchased from Dongguan, hefeng new material technology Co., ltd.) and the prepared single material, the fluorescent film is stuck on the double-sided UV film. The glass plate was placed on a pusher and fixed, the pusher head was placed at a position 2/3 of the wafer height, and the wafer was pushed to obtain the pusher force value, and the results are reported in Table 1.
TABLE 1
Claims (4)
1. A white light CSP preparation method suitable for vertical chips is characterized in that: the method comprises the following steps: (1) preparation of a fluorescent base film: taking a fluorescent film with the size being cut down, and arranging laser cutting vertical chip bonding pad sites in the central area of the fluorescent film; (2) white light CSP assembly: adhering the prepared fluorescent substrate film to a double-sided adhesive tape, and inserting a vertical chip into the fluorescent substrate film through a bonding pad site; (3) Cutting the fluorescent substrate film, and removing the double-sided tape to obtain white light CSP;
the thickness of the fluorescent film is 120-180 mu m; the thickness of the fluorescent substrate film is consistent with that of the fluorescent film;
the fluorescent film is any one of hot melt adhesive films;
the hot melt adhesive film is any one of a solid silica adhesive film, a semi-solid hot melt silica adhesive film and a liquid hot melt silica adhesive film;
the average viscosity of the semi-solid hot melt silica gel film and the liquid hot melt silica gel film is 10000-15000 mPa.s, and the test temperature is 50 ℃;
the step (2) further comprises a vacuum baking step: vacuum baking is carried out on the assembled white light CSP, wherein the baking condition is 1-5 KPa, 160-180 ℃ and 3-5 hours;
and (3) the shape and the size of the bonding pad of the optical cutting vertical chip in the step (1) are consistent with those of the bonding pad on the vertical chip.
2. The method for producing white light CSP suitable for use in vertical chips of claim 1, wherein: the double-sided adhesive tape is any one of a double-sided UV adhesive tape, a double-sided pyrolytic adhesive tape and a double-sided heat-resistant adhesive tape.
3. A white light CSP produced by the method for producing a white light CSP suitable for use in a vertical chip according to any one of claims 1 to 2.
4. An application of the white light CSP preparation method of any one of claims 1 to 2, wherein: the method is applied to the preparation method of the white light CSP equipment with high power and high structural stability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311597930.5A CN117317078B (en) | 2023-11-28 | 2023-11-28 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311597930.5A CN117317078B (en) | 2023-11-28 | 2023-11-28 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117317078A true CN117317078A (en) | 2023-12-29 |
| CN117317078B CN117317078B (en) | 2024-04-19 |
Family
ID=89255563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311597930.5A Active CN117317078B (en) | 2023-11-28 | 2023-11-28 | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117317078B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
| CN103254889A (en) * | 2012-02-16 | 2013-08-21 | 展晶科技(深圳)有限公司 | Manufacturing method of phosphor film, packaging method of corresponding light emitting diode |
| CN104979432A (en) * | 2014-04-08 | 2015-10-14 | 刘胜 | Technologies of packaging LED chip directly emitting white light |
| CN104979452A (en) * | 2014-04-08 | 2015-10-14 | 刘胜 | Method for manufacturing and packaging light-emitting diode chip on wafer |
| CN106449951A (en) * | 2016-11-16 | 2017-02-22 | 厦门市三安光电科技有限公司 | Manufacturing method of light emitting diode packaging structure |
| CN107591468A (en) * | 2017-07-14 | 2018-01-16 | 昆山芯乐光光电科技有限公司 | A kind of emitting led method for packing of one side based on CSP encapsulating structures |
| CN108109993A (en) * | 2017-11-20 | 2018-06-01 | 鸿利智汇集团股份有限公司 | A kind of manufacturing method of CSP |
| CN108281531A (en) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | A kind of CSP LED encapsulation methods |
| CN109830474A (en) * | 2018-12-17 | 2019-05-31 | 江西省晶能半导体有限公司 | Glory LED core piece preparation method and glory LED lamp bead preparation method |
| CN216054770U (en) * | 2021-08-16 | 2022-03-15 | 江西晶亮光电科技协同创新有限公司 | LED light-emitting device |
| CN116314550A (en) * | 2023-02-21 | 2023-06-23 | 硅能光电半导体(广州)有限公司 | CSP (chip scale package) structure of forward-mounted LED (light emitting diode) chip, preparation method of CSP structure and COB (chip on board) light source |
-
2023
- 2023-11-28 CN CN202311597930.5A patent/CN117317078B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121911A1 (en) * | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
| CN103254889A (en) * | 2012-02-16 | 2013-08-21 | 展晶科技(深圳)有限公司 | Manufacturing method of phosphor film, packaging method of corresponding light emitting diode |
| CN104979432A (en) * | 2014-04-08 | 2015-10-14 | 刘胜 | Technologies of packaging LED chip directly emitting white light |
| CN104979452A (en) * | 2014-04-08 | 2015-10-14 | 刘胜 | Method for manufacturing and packaging light-emitting diode chip on wafer |
| CN106449951A (en) * | 2016-11-16 | 2017-02-22 | 厦门市三安光电科技有限公司 | Manufacturing method of light emitting diode packaging structure |
| CN107591468A (en) * | 2017-07-14 | 2018-01-16 | 昆山芯乐光光电科技有限公司 | A kind of emitting led method for packing of one side based on CSP encapsulating structures |
| CN108109993A (en) * | 2017-11-20 | 2018-06-01 | 鸿利智汇集团股份有限公司 | A kind of manufacturing method of CSP |
| CN108281531A (en) * | 2018-01-19 | 2018-07-13 | 昆山琉明光电有限公司 | A kind of CSP LED encapsulation methods |
| CN109830474A (en) * | 2018-12-17 | 2019-05-31 | 江西省晶能半导体有限公司 | Glory LED core piece preparation method and glory LED lamp bead preparation method |
| CN216054770U (en) * | 2021-08-16 | 2022-03-15 | 江西晶亮光电科技协同创新有限公司 | LED light-emitting device |
| CN116314550A (en) * | 2023-02-21 | 2023-06-23 | 硅能光电半导体(广州)有限公司 | CSP (chip scale package) structure of forward-mounted LED (light emitting diode) chip, preparation method of CSP structure and COB (chip on board) light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117317078B (en) | 2024-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100474646C (en) | Packaging method for white light illuminating diode | |
| JP4211359B2 (en) | Manufacturing method of semiconductor device | |
| CN104893600B (en) | Viscous fluorescent glue film for fast package of light emitting diode and preparation method and application thereof | |
| CN105720146B (en) | A kind of broad-area electrode LED array preparation method | |
| EP1936704A2 (en) | Semiconductor light emitting device package and method for manufacturing the same | |
| CN102723424B (en) | Method for preparing fluorescent wafer for LED (light-emitting diode) | |
| TW200409384A (en) | Semiconductor device and an optical device using the semiconductor device | |
| CN101123286A (en) | LED encapsulation structure and method | |
| CN102478172A (en) | Illumination apparatus | |
| CN102709458A (en) | LED (light-emitting diode) packaging structure using transparent oxide substrate and packaging method thereof | |
| CN101338879A (en) | Method for preparing white light LED utilizing YAG transparent ceramic | |
| US20060145364A1 (en) | Filling paste structure and process for WL-CSP | |
| JP2007281218A (en) | Light emitting diode and its manufacturing method | |
| CN117317078B (en) | White light CSP (chip size reduction) preparation method suitable for vertical chip and application thereof | |
| TW201212294A (en) | LED chip modules, method for packaging the LED chip modules, and moving fixture thereof | |
| CN109801902A (en) | A kind of package substrate, semiconductor devices and preparation method thereof | |
| CN101436625A (en) | Packaging method for white light LED | |
| CN208368541U (en) | Efficiently add lustre to type CSP LED | |
| JP2007109911A (en) | Light emitting diode and its manufacturing method | |
| CN202712266U (en) | Fluorescent transparent ceramic LED sealing structure | |
| CN110473948B (en) | LED packaging method and packaging structure | |
| CN112820659B (en) | Half-cut testing method of gallium arsenide-based LED chip | |
| CN108615803B (en) | High-efficiency light-increasing CSP LED and manufacturing process thereof | |
| CN106784251A (en) | A kind of SMC plastic-packageds LED support structure | |
| CN212874535U (en) | Structure for packaging solid fluorescent material for white light LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |