CN106784251A - A kind of SMC plastic-packageds LED support structure - Google Patents
A kind of SMC plastic-packageds LED support structure Download PDFInfo
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- CN106784251A CN106784251A CN201710013366.6A CN201710013366A CN106784251A CN 106784251 A CN106784251 A CN 106784251A CN 201710013366 A CN201710013366 A CN 201710013366A CN 106784251 A CN106784251 A CN 106784251A
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- 239000004033 plastic Substances 0.000 claims abstract description 48
- 239000004568 cement Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000005538 encapsulation Methods 0.000 claims abstract description 14
- 238000013007 heat curing Methods 0.000 claims abstract description 10
- -1 silica gel compound Chemical class 0.000 claims abstract description 7
- 238000010276 construction Methods 0.000 claims abstract description 6
- 239000000741 silica gel Substances 0.000 claims abstract description 6
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 6
- 238000000926 separation method Methods 0.000 claims description 45
- 238000005520 cutting process Methods 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 238000004080 punching Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 239000003550 marker Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 2
- 238000005253 cladding Methods 0.000 claims 1
- 238000001579 optical reflectometry Methods 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
A kind of SMC plastic-packageds LED support structure, including electrode framework, main body plastic cement.Using short circuit type electrode framework or open ended electrode framework and the heat cure of SMC plastic cement forming LED support construction packages.SMC heat curing-type silica gel compound materials have 90% or bigger light reflectivity for the wavelength between 300nm to 800nm.Use short circuit type electrode framework with the heat cure of SMC plastic cement to form full slice system supporting structure.Use open ended electrode framework with the heat cure of SMC plastic cement to form single separate stand structure.The present invention provides a kind of SMC plastic-packageds LED support structure, effectively solves existing plastic rubber material LED support after long-term lighting, the problem that light reflectivity is decayed more than 5%；Compared to conventional LED package plastic cement, same size encapsulation meets more high-power, with more preferable structural stability and optical stability.
Description
Technical field
A kind of SMC plastic-packageds LED support structure of the present invention, is applied to TV, display, mobile phone backlight, lighting apparatus
And film secondary light source.
Background technology
LED new type light sources have been applied to illumination and backlight market.In LED illumination market, due to high brightness, specular removal,
The light fixture of low cost is main force's product of future market demand, in backlight market, LED liquid crystal television of being benefited, display screen demand
Rapid growth, LED support size show miniaturization, in high-power feature.
From the PPA of the first generation（Thermoplastic plastic）To the ceramic substrate of the second generation, third generation PCT（Poly terephthalic acid oneself
Diformazan alcohol ester）, the EMC of forth generation（Thermoset epoxy Resin materials）.LED encapsulation experienced multiple technology upgrading and product is changed
Generation.
1., wherein using PPA as package material, because the power of its plastic material characteristic LED can only be limited within 0.5W.
2., using ceramic substrate as LED package supports, although there is excellent corrosion-resistant, low thermal coefficient of expansion, good
Resistance to UV heat resistances, but its material cost greatly increases.
3., using PCT as package material, because it is limited within 1W in thermal coefficient of expansion and resistance to UV features LED power.
So LED encapsulation factory actively imports in being applied to high-power EMC supports, EMC supports processing procedure and past in recent years
PPA, PCT differ greatly, but with excellent performance progressively instead of PPA, PCT 1W such as its heat-resisting, resistance to UV, light reflectivity be high with
Interior power to 2W products change.But as market is inexpensive to LED and high performance demand, now using SMC（Heat curing-type silicon
Glue compound material）More than 2W power and more than 90% light reflectivity are capable of achieving for LED support encapsulation.
The content of the invention
To solve to use ceramic substrate price high in high-power LED encapsulation technology in the prior art, PPA, PCT, EMC are used
It is heat-resisting, resistance to UV and shrinkage factor performance, caused initial light reflectivity less than 90%, light rear light decay for a long time more than 5%, encapsulation power
Low problem.The present invention provides a kind of SMC plastic-packageds LED support structure, effectively solves existing plastic rubber material LED support long-term
After lighting, the problem that light reflectivity is decayed more than 5%；Compared to conventional LED package plastic cement, same size encapsulation meets more high-power,
With more preferable structural stability and optical stability.
The technical scheme that the present invention takes is：
Scheme one：
A kind of full slice system short circuit type LED support structure, including cut by copper sheet, the short circuit type electrode framework that punching press is constituted, this is short
Road type electrode framework includes multiple LED support units, multiple cutting holes.Each LED support unit includes positive terminal pad, negative pole
Pad, electrode separation area；Positive terminal pad, negative terminal pad and other LED support units form short-circuit connection.
Positive terminal pad, negative terminal pad constitute support crystal bonding area, and electrode separation area is filled with SMC plastic cement.Cutting hole position is in list
Individual LED support unit surrounding.
Further, the support crystal bonding area is LED support reflector functional areas, and support crystal bonding area is provided with silver coating.
Further, position of the electrode separation area in LED support unit is put or is biased in being.
Further, the SMC plastic cement is filled in short circuit type electrode framework bottom faces area above and electrode separation area
In, form multiple reflectors.Wherein SMC plastic cement only one side filling bracket crystal bonding area surrounding and fill single led carrier unit
Electrode separation area, expose support crystal bonding area, the one side reflector reflective to form bottom；One side reflector light-emitting window is circle
Shape or square.
Further, the short circuit type electrode framework and SMC plastic cement heat cures, form full slice system supporting structure.
Scheme two：
A kind of single separate type open ended LED support structure, including cut by copper sheet, the open ended electrode framework that punching press is constituted,
The short circuit type electrode framework includes multiple LED support units, and each LED support unit includes positive terminal pad, negative terminal pad, electricity
Pole marker space.Positive terminal pad, negative terminal pad and contact conductor connection, supporting wire disconnect with positive and negative electrode pad.Positive terminal pad,
Negative terminal pad constitutes support crystal bonding area.Electrode separation area is filled with SMC plastic cement.
Further, the support crystal bonding area is LED support reflector functional areas, and support crystal bonding area is provided with silver coating.
Further, position of the electrode separation area in LED support unit is put or is biased in being.
Further, the SMC plastic cement is filled in electrode framework side, electrode separation area, and SMC plastic cement is by supporting wire bag
Cover.
A kind of SMC plastic-packageds LED support structure of the present invention, technique effect is as follows：
1：Compared to conventional LED package plastic cement, SMC has light reflectivity higher, and it has for the wavelength between 300nm to 800nm
There is 95% light reflectivity.
2：Compared to conventional LED package plastic cement, SMC has more preferable structural stability and optical stability, and it is in 150 DEG C of high temperature
1200 hours it is aging after for the wavelength between 300nm to 800nm have 90% light reflectivity.
3：Compared to conventional LED package plastic cement, same size encapsulation, SMC plastic-packageds can meet more high-power.
4：Using short circuit type electrode framework, with the heat cure of SMC plastic cement forming full slice system supporting structure, single LEDs support
Arranging density, integrated level are high, reduce copper material framework, plastic cement waste rate.
5：Using open ended electrode framework, with the heat cure of SMC plastic cement to form single separate stand structure, it is in production
Test can be lighted before middle cutting, contributes to LED light to adjust in time, improve efficiency.
6：Single LEDs electrode separation area in electrode framework, the mode of putting can simultaneously be applied to positive cartridge chip or upside-down mounting in
Chip, improves commonality.
Brief description of the drawings
Fig. 1 is Zhong Zhi electrode separations area short circuit type electrode framework schematic diagram.
Fig. 2 is bias electrode marker space short circuit type electrode framework schematic diagram.
Fig. 3 is bias electrode marker space open ended electrode framework schematic diagram.
Fig. 4 is Zhong Zhi electrode separations area open ended electrode framework schematic diagram.
Fig. 5 be full slice system short circuit type in put electrode separation SMC supporting structure schematic diagrames.
Fig. 6 is that full slice system short circuit type bias electrode separates SMC supporting structure schematic diagrames.
Fig. 7 is that single separate type open ended bias electrode separates SMC supporting structure schematic diagrames.
Fig. 8 be single separate type open ended in put electrode separation SMC supporting structure schematic diagrames.
Fig. 9 is single of Zhong Zhi electrode separations area SMC LED encapsulation structure schematic diagrames（Flip-chip）.
Figure 10 is single of Zhong Zhi electrode separations area SMC LED encapsulation structure schematic diagrames（Positive cartridge chip）.
Figure 11 is single of bias electrode marker space SMC LED encapsulation structure schematic diagrames（Positive cartridge chip）.
Specific embodiment
Wherein：
1st, 1 '-electrode cutting hole；2nd, 2 '-mono- LEDs carrier unit；
3rd, 3 ' positive terminal pad；4th, 4 ' negative terminal pad；
5th, 5 ' electrode separation area；6th, contact conductor
7th, supporting wire 8, reflector
9th, flip chip 10, wire（Gold, copper cash）
11st, formal dress chip 12,12 ', SMC plastic cement.
13rd, electrode framework material strip body.
Specific embodiment
A kind of SMC plastic-packageds LED support structure, including electrode framework, main body plastic cement.Using short circuit type electrode framework,
Or open ended electrode framework and the heat cure of SMC plastic cement are forming LED support construction packages.
SMC heat curing-type silica gel compound materials have 90% or bigger light reflectivity for the wavelength between 300nm to 800nm.
Use short circuit type electrode framework with the heat cure of SMC plastic cement to form full slice system supporting structure.
Use open ended electrode framework with the heat cure of SMC plastic cement to form single separate stand structure.
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.But, this
Invention can be realized with many different forms, however it is not limited to embodiment described herein.
Embodiment 1：
A kind of full slice system short circuit type LED support structure,
1）, cutting short circuit type electrode framework：0.15 ± 0.1mm size copper sheets are cut according to practical application request, punching press,
The short circuit type electrode framework shown in Fig. 1, Fig. 2 is obtained, wherein after cutting, punching press, forming multiple LED support units 2, multiple cuttings
Hole 1.Positive terminal pad 4, negative terminal pad 3 form short-circuit connection with other LED support units.Positive terminal pad 4, negative terminal pad 3 are constituted
Support crystal bonding area, electrode separation area 5 carries out plastic cement filling for being molded section.The cutting width of hole 1 is 0.15mm, respectively positioned at single
The surrounding of LED support unit 2, after the completion of being encapsulated in order to LED, multiple LED units is divided into by full wafer support.
2）, electroplated electrode framework：The support die bond region that positive terminal pad 4, negative terminal pad 3 are constituted, completes support injection
It is LED support reflector functional areas after encapsulation, to meet high reflectance, support crystal bonding area is provided with silver coating.
3）, injection：By SMC silica gel compound material via injection mould and Zhong Zhi electrode separations area short circuit type electrode framework or
Bias electrode marker space short circuit type electrode framework, completes construction packages, SMC plastic cement 12 is filled in electrode framework side and cutting
Hole 1, electrode separation area 5, put in full slice system short circuit type as shown in Figure 5 electrode separation SMC supports to be formed, or shown in Fig. 6 it is whole
Chip short circuit type bias electrode separates SMC supports, and the wherein plastic cement of LED support unit 2 is in one state.
4）, put electrode separation SMC supports in full slice system short circuit type or full slice system short circuit type bias electrode separates SMC branch
Frame, fixed wafer is welded with Fig. 9 flip chips；Or the connection of Figure 10 formal dress chip（Figure 11 formal dress chip is connected）, its feature is
Packing forms commonality is strong.
5）, transversely, the position of longitudinally cutting hole 1 will, the full wafer LED that has encapsulated cutting obtains single LEDs.
Embodiment 2：
A kind of single separate type open ended LED support structure,
1）, cutting electrode framework：0.15 ± 0.1mm size copper sheets are cut according to practical application request, punching press, obtain figure
3rd, the open ended electrode framework shown in Fig. 4, wherein forming multiple LED support units 2 ' after cutting, punching press.
Each LED support unit 2 ' includes positive terminal pad 4 ', negative terminal pad 3 ', electrode separation area 5 '.
Negative terminal pad 3 ', positive terminal pad 4 ' are connected with contact conductor 6, and supporting wire 7 disconnects with positive and negative electrode pad.
Positive terminal pad 4, negative terminal pad 3 constitute support crystal bonding area.
Electrode separation area 5 ' carries out plastic cement filling for being molded section.
2）, electroplated electrode framework：The support die bond region that positive terminal pad 4 ', negative terminal pad 3 ' are constituted, completes support note
It is LED support reflector functional areas after packaged by plastic, to meet high reflectance, support crystal bonding area is provided with silver coating.
3）, injection：By SMC silica gel compound material via injection mould and Zhong Zhi electrode separations area open ended electrode framework or
Bias electrode marker space open ended electrode framework, completes construction packages, SMC plastic cement 12 ' is filled in electrode framework side and electricity
Be coated with for supporting wire 7 to be formed put electrode separation SMC in mono- separate type open ended of Fig. 8 by pole marker space 5 ', SMC plastic cement 12 '
Electrode separation SMC supports are put in mono- separate type open ended of support or Fig. 7.
4）, complete injection after, contact conductor 6 is cut into disconnections, retain supporting wire 7 to realize LED unit open circuit.
5）, electrode separation SMC supports or single separate type open ended bias electrode point are put in single separate type open ended
Every SMC supports, fixed wafer is welded with Fig. 9 flip chips or Figure 10 formal dress chip is connected（Figure 11 formal dress chip is connected）, its
Feature is：Packing forms commonality is strong.
Claims (10)
1. a kind of full slice system short circuit type LED support structure, it is characterised in that：Including the short circuit type for being cut by copper sheet, punching press is constituted
Electrode framework, the short circuit type electrode framework includes multiple LED support units（2）, multiple cutting holes（1）, each LED support list
Unit（2）Including positive terminal pad（4）, negative terminal pad（3）, electrode separation area（5）；Positive terminal pad（4）, negative terminal pad（3）With other
LED support unit forms short-circuit connection；Positive terminal pad（4）, negative terminal pad（3）Constitute support crystal bonding area；Electrode separation area（5）Fill out
Filled with SMC plastic cement（12）.
2. a kind of full slice system short circuit type LED support structure according to claim 1, it is characterised in that：Cutting hole（1）Positioned at list
Individual LED support unit（2）Surrounding.
3. a kind of full slice system short circuit type LED support structure according to claim 1, it is characterised in that：The support crystal bonding area
It is LED support reflector functional areas, support crystal bonding area is provided with silver coating.
4. a kind of full slice system short circuit type LED support structure according to claim 1, it is characterised in that：The SMC plastic cement（12）
It is filled in short circuit type electrode framework bottom faces area above and electrode separation area（5）In, form multiple reflectors（8）；
Wherein SMC plastic cement（12）Only one side filling bracket crystal bonding area surrounding and fill the electrode separation of single led carrier unit
Area（5）, expose support crystal bonding area, the one side reflector reflective to form bottom；One side reflector light-emitting window is circular or side
Shape.
5. a kind of full slice system short circuit type LED support structure according to claim 1, it is characterised in that：The short circuit type electrode
Framework and SMC plastic cement（12）Heat cure, forms full slice system supporting structure.
6. a kind of short circuit type LED preparation methods, it is characterised in that comprise the following steps：
1）, cutting short circuit type electrode framework：Copper sheet is cut according to practical application request, punching press, obtained short circuit type electrode
Framework, wherein after cutting, punching press, forming multiple LED support units（2）, multiple cutting holes（1）, positive terminal pad（4）, negative pole weldering
Disk（3）Short-circuit connection is formed with other LED support units；Positive terminal pad（4）, negative terminal pad（3）Constitute support crystal bonding area, electrode
Marker space（5）Plastic cement filling is carried out for being molded section, hole is cut（1）Single led carrier unit is located at respectively（2）Surrounding, so as to
After the completion of LED encapsulation, full wafer support is divided into multiple LED units；
2）, electroplated electrode framework：Positive terminal pad（4）, negative terminal pad（3）The support die bond region of composition, completes support injection
It is LED support reflector functional areas after encapsulation, to meet high reflectance, support crystal bonding area is provided with silver coating；
3）, injection：By SMC silica gel compound material via injection mould and Zhong Zhi electrode separations area short circuit type electrode framework or biasing
Electrode separation area short circuit type electrode framework, completes construction packages, makes SMC plastic cement（12）It is filled in electrode framework side and cutting hole
（1）, electrode separation area（5）, to form full slice system short circuit type electrode separation SMC supports, wherein LED support unit（2）Plastic cement is in
One state；
4）, put electrode separation SMC supports in full slice system short circuit type or full slice system short circuit type bias electrode separates SMC supports, Gu
Determine chip to be welded with flip chip；Or the connection of formal dress chip, its feature is that packing forms commonality is strong；
5）, transversely, longitudinally cutting hole（1）Position is by the full wafer LED cuttings for having encapsulated obtain single LEDs.
7. a kind of single separate type open ended LED support structure, it is characterised in that：Including being cut by copper sheet, punching press is constituted opens
Road type electrode framework, the short circuit type electrode framework includes multiple LED support units（2’）, each LED support unit（2’）Bag
Include positive terminal pad（4’）, negative terminal pad（3’）, electrode separation area（5’）；Positive terminal pad（4’）, negative terminal pad（3’）Draw with electrode
Line（6）Connection, supporting wire（7）Disconnected with positive and negative electrode pad；Positive terminal pad（4’）, negative terminal pad（3’）Constitute support die bond
Area；Electrode separation area（5’）Filled with SMC plastic cement（12’）.
8. a kind of full slice system short circuit type LED support structure according to claim 7, it is characterised in that：The support crystal bonding area
It is LED support reflector functional areas, support crystal bonding area is provided with silver coating.
9. a kind of full slice system short circuit type LED support structure according to claim 7, it is characterised in that：The SMC plastic cement
（12’）It is filled in electrode framework side, electrode separation area（5’）, SMC plastic cement（12’）By supporting wire（7）Cladding.
10. a kind of open ended LED preparation methods, it is characterised in that comprise the following steps：
1）, cutting electrode framework：Copper sheet is cut according to practical application request, punching press, obtain open ended electrode framework, its
Multiple LED support units are formed after middle cutting, punching press（2’）, each LED support unit（2’）Including positive terminal pad（4’）, it is negative
Pole pad（3’）, electrode separation area（5’）；Positive terminal pad（4’）, negative terminal pad（3’）With contact conductor（6）Connection, supporting wire
（7）Disconnected with positive and negative electrode pad；Positive terminal pad（4’）, negative terminal pad（3’）Constitute support crystal bonding area；Electrode separation area（5’）With
Plastic cement filling is carried out in injection section；
2）, electroplated electrode framework：Positive terminal pad（4’）, negative terminal pad（3’）The support die bond region of composition, completes support note
It is LED support reflector functional areas after packaged by plastic, to meet high reflectance, support crystal bonding area is provided with silver coating；
3）, injection：By SMC silica gel compound material via injection mould and Zhong Zhi electrode separations area open ended electrode framework or biasing
Electrode separation area open ended electrode framework, completes construction packages, makes SMC plastic cement（12’）It is filled in electrode framework side and electrode
Marker space（5’）, SMC plastic cement（12’）By supporting wire（7）It is coated with to be formed put electrode separation SMC in single separate type open ended
Electrode separation SMC supports are put in support or single separate type open ended；
4）, complete injection after, by contact conductor（6）Cutting disconnects, and retains supporting wire（7）To realize that LED unit is opened a way.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710013366.6A CN106784251A (en) | 2017-01-09 | 2017-01-09 | A kind of SMC plastic-packageds LED support structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710013366.6A CN106784251A (en) | 2017-01-09 | 2017-01-09 | A kind of SMC plastic-packageds LED support structure |
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| CN106784251A true CN106784251A (en) | 2017-05-31 |
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| CN201710013366.6A Pending CN106784251A (en) | 2017-01-09 | 2017-01-09 | A kind of SMC plastic-packageds LED support structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111916435A (en) * | 2020-08-14 | 2020-11-10 | 盐城东山精密制造有限公司 | Flip LED packaging device and preparation method and application thereof |
| CN113707791A (en) * | 2021-09-02 | 2021-11-26 | 鸿利智汇集团股份有限公司 | LED manufacturing process |
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| CN102709279A (en) * | 2012-05-30 | 2012-10-03 | 东莞市凯昶德电子科技股份有限公司 | LED (Light Emitting Diode) packaging structure of high brilliance full color display |
| CN103400927A (en) * | 2013-07-25 | 2013-11-20 | 晶科电子（广州）有限公司 | High-reliability LED (light emitting diode) bracket and LED device thereof |
| US20160148860A1 (en) * | 2014-11-21 | 2016-05-26 | Cree, Inc. | Leadframe based light emitter components and related methods |
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