CN107346801A - LED integrated encapsulation structures and its method for packing - Google Patents
LED integrated encapsulation structures and its method for packing Download PDFInfo
- Publication number
- CN107346801A CN107346801A CN201610298032.3A CN201610298032A CN107346801A CN 107346801 A CN107346801 A CN 107346801A CN 201610298032 A CN201610298032 A CN 201610298032A CN 107346801 A CN107346801 A CN 107346801A
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- China
- Prior art keywords
- encapsulation
- microstructured layers
- circuit board
- glue groove
- led
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000012856 packing Methods 0.000 title claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims abstract description 42
- 239000011248 coating agent Substances 0.000 claims abstract description 32
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 239000011241 protective layer Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 30
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 8
- 239000012790 adhesive layer Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 2
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of LED integrated encapsulation structures, including substrate, is arranged on the encapsulation glue groove of the upper surface of base plate and is arranged at the microstructured layers encapsulated in glue groove；Wherein, the die bond groove array including multiple die bond grooves is offered in the encapsulation glue groove, each described die bond trench bottom is respectively arranged with LED chip, circuit board is additionally provided with the encapsulation glue groove, opening corresponding with the die bond groove array is offered on the circuit board, the LED chip is connected by wire with the circuit board, and the encapsulation glue groove is also filled with encapsulating glue-line, for being packaged to the LED chip, the wire and the circuit board.LED integrated encapsulation structures and its method for packing proposed by the present invention; by covering microstructured layers on integrated encapsulation structure fluorescent adhesive layer; and the refractive index of protective layer, fluorescence coating and microstructured layers is from high to low, light extraction efficiency, the increase shooting angle of whole LED integrated encapsulation structures can be lifted by such design.
Description
Technical field
The present invention relates to light emitting semiconductor device and its method for packing, more particularly to a kind of LED integration packagings knot
Structure and its method for packing.
Background technology
Light emitting diode (LightEmitting Diode, LED) is a kind of semiconductor subassembly, its have energy-conservation,
The features such as environmental protection, long lifespan, small volume, be widely used in various instructions, display, decoration, backlight,
The field such as general lighting and urban landscape.In LED component process for making, LED encapsulation is to manufacture
Most important link in journey, this link directly affect the luminous efficiency of LED component.At present, LED is encapsulated
It is the most frequently used for integration packaging (COB) technology, LED light source is directly attached to high reflecting rate in COB technologies
Mirror metal substrate on, this technology eliminates support concept, electroless plating, without Reflow Soldering, without paster process.
Relative to conventional packaging techniques, COB technologies have it is cheap, save space and technical maturity etc. it is excellent
Point.However, COB encapsulation equally exists, light extraction efficiency is not high, and emergent light angle is small, easily forms hot spot etc. and lacks
Point.
The content of the invention
In order to solve the above problems, LED COB structures proposed by the present invention and its method for packing can solve the problem that
The problems such as light efficiency is low, the angle of emergence is small existing for COB encapsulation.
Concrete technical scheme proposed by the present invention is：A kind of LED COB structures, including substrate, setting are provided
The encapsulation glue groove on surface and the microstructured layers being arranged in the encapsulation glue groove on the substrate；Wherein,
The die bond groove array including multiple die bond grooves is offered in the encapsulation glue groove, is divided in each described die bond groove
Be not provided with LED chip, circuit board be additionally provided with the encapsulation glue groove, offered on the circuit board with
It is open corresponding to the die bond groove array, the LED chip is connected by wire with the circuit board, described
Encapsulation glue groove is also filled with encapsulating glue-line, for the LED chip, the wire and the circuit board
It is packaged.
Further, the encapsulation glue-line, which includes corresponding to, is covered in the LED chip, the wire and institute
State the protective layer of circuit board surface and the fluorescence coating being covered on the protective layer.
Further, the refractive index of the protective layer is more than 1.5.
Further, the refractive index of the fluorescence coating is 1.43~1.5.
Further, the upper surface of the microstructured layers is provided with nanostructured, and the nanostructured is selected from battle array
Arrange any in the nanometer cylinder set, nanometer centrum or nano-hemisphere body.
Further, the material of the microstructured layers is dimethyl silicone polymer, the refraction of the microstructured layers
Rate is less than 1.43.
The present invention also provides a kind of method for packing of LED COB structures as described above, and methods described includes following
Step：
The protective layer is coated in the encapsulation glue groove so that the LED chip, the wire and institute
Circuit board is stated to be completely covered；
The fluorescent material is coated on protective layer after hardening so that the fluorescent material fills up the encapsulation
Glue groove；
The microstructured layers are fitted in the fluorescent material surface before the fluorescent material is fully cured, made
The fluorescent material forms the fluorescence coating after being fully cured, and makes the microstructured layers and the fluorescence coating phase
Mutually bonding.
Further, the refractive index of the protective layer is more than 1.5.
Further, the refractive index of the fluorescence coating is 1.43~1.5.
Further, the upper surface of the microstructured layers is provided with nanostructured, and the nanostructured is selected from battle array
It is any to arrange the nanometer cylinder set, nanometer centrum or nano-hemisphere body.
Further, the material of the microstructured layers is dimethyl silicone polymer, the refraction of the microstructured layers
Rate is less than 1.43.
LED COB structures proposed by the present invention and its method for packing, by being covered on COB fluorescent adhesive layers
Microstructured layers, nanostructured is provided with microstructured layers, can lift the light extraction efficiency of LED COB structures,
And the refractive index of protective layer, fluorescence coating and microstructured layers is from high to low, can be entered by such design
Light extraction efficiency, the increase shooting angle of the whole LED COB structures of lifting of one step.
Brief description of the drawings
The following description carried out in conjunction with the accompanying drawings, above and other aspect, the feature of embodiments of the invention
It will become clearer with advantage, in accompanying drawing：
Fig. 1 is the structure chart of LED integrated encapsulation structures of the present invention；
Fig. 2 is the method for packing flow chart of LED integrated encapsulation structures of the present invention.
Embodiment
Hereinafter, with reference to the accompanying drawings to embodiments of the invention are described in detail.However, it is possible to many different
Form implements the present invention, and the present invention should not be construed as limited to the specific embodiment that illustrates here.
Conversely, there is provided these embodiments are in order to explain the principle and its practical application of the present invention, so that this area
Others skilled in the art it will be appreciated that various embodiments of the present invention and being suitable for the various of specific intended application and repairing
Change.
Reference picture 1, the present embodiment provide a kind of LED COB structures, and it includes substrate 1, and substrate 1 is gold
Belong to substrate.The upper surface of substrate 1 offers encapsulation glue groove 11, and the bottom 11a of encapsulation glue groove 11 offers bag
Include the die bond groove array of multiple bowl-shape die bond grooves 12, each bottom of die bond groove 12 in die bond groove array point
LED chip 13 is not placed with, and the bottom of the encapsulation glue groove 11 is additionally provided with circuit board 14, the circuit
Opening corresponding with the die bond groove array, the size of opening and the opening of die bond groove 12 are offered on plate 14
It is in the same size, it is easy to expose the LED chip 13 positioned at the bottom of die bond groove 12, the LED chip 13 is logical
Sticking double faced adhesive tape is crossed in the bottom of die bond groove 12, it is connected by plain conductor 15 with the circuit board 14,
For example, plain conductor is gold thread.
Filled with encapsulation glue-line 10 in the encapsulation glue groove 11, for the LED chip 13, the electricity
Road plate 14 and the wire 15 are packaged.The encapsulation glue-line 10 includes protective layer 10a and fluorescence
Layer 10b, protective layer 10a positioned at encapsulation glue groove 11 bottom and the protective layer 10a by LED chip 13,
Circuit board 14 and wire 15 are completely covered, and protective layer 10a upper surface is higher by the bottom surface of encapsulation glue groove 11
11a.Protective layer 10a is transparent colloid, for example, protective layer 10a is silica gel, it is preferred that protective layer 10a
Refractive index be more than 1.5.Wherein, fluorescence coating 10b effect be in order to carry out it is photochromic be compounded to form white light, its
Protective layer 10a upper surface is arranged at, such protective layer 10a isolates fluorescence coating 10b with LED chip 13
Open, can avoid LED chip is luminous from causing temperature to raise and impacted to fluorescence coating 10b.The fluorescence
Layer 10b will encapsulate glue groove 11 and fill up and fluorescence coating 10b upper surface is plane, and fluorescence coating 10b material is
Epoxy resin AB glue, is mixed by AB glue and fluorescent material, wherein, A glue and B glue in AB glue
Match as 1:1, the proportioning of AB glue and fluorescent material determines according to fluorescence coating 10b refractive index, it is preferred that
The refractive index of the fluorescence coating 10b is 1.43~1.5, the general 1~2g of quality of fluorescent material, the quality of AB glue
Generally 10g.
In order to lift the light extraction efficiency of LED COB structures, the upper surface of the fluorescence coating 10b is additionally provided with micro-
Structure sheaf 20.The material of the microstructured layers 20 is dimethyl silicone polymer (PDMS), it is preferred that micro-
The refractive index of structure sheaf 20 is less than 1.43.The upper surface of the microstructured layers 20 is provided with nanostructured 20a,
The nanostructured 20a can be nanometer cylinder, nanometer centrum or the nano-hemisphere body that array is set.Wherein,
A part of light that LED chip 13 is sent directly is incided on fluorescence coating 10b after protective layer 10a refractions, glimmering
Photosphere 10b is photochromic to light progress incident thereon to be compounded to form white light, and the white light then formed incides
It is emitted on microstructured layers 20 and after the refraction of microstructured layers 20；Another part light that LED chip 3 is sent is first
Reflect and incide on protective layer 10a by the side wall of bowl-shape die bond groove 12, incide on protective layer 10a
Light is incided on fluorescence coating 10b after protective layer 10a refractions, and fluorescence coating 10b is to incident thereon
Light progress is photochromic to be compounded to form white light, and the white light eventually formed is incided on microstructured layers 20 and through micro-structural
It is emitted after the refraction of layer 20, the light extraction efficiency of LED COB structures can be lifted by the nanostructured 20a
And increase shooting angle.
Reference picture 2, the present embodiment additionally provide a kind of method for packing of LED COB structures as described above, institute
The method of stating comprises the following steps：
Step S1：In the encapsulation armor coated 10a in bottom of glue groove 11 so that the LED chip 13, institute
State circuit board 14 and the wire 15 is completely covered and protective layer 10a upper surface is higher than encapsulation glue groove
11 bottom surface, wherein, protective layer 10a refractive index is more than 1.5；
Step S2：Fluorescent material is coated on protective layer 10a after hardening so that the fluorescent material fills up
The encapsulation glue groove 11, fluorescent material is epoxy resin AB glue.
Wherein, the specific manufacturing process of fluorescence coating 10b includes：The AB glue necessarily matched and fluorescent material are mixed simultaneously
Bubble-free is evacuated to after being sufficiently stirred and obtains phosphor gel, is then transferred to the phosphor gel after vacuumizing
In dispensing container, the phosphor gel in dispensing container is coated on protective layer 10a and is full of by point gum machine
Encapsulate glue groove 11 and form the smooth fluorescence coating 10b in upper surface, finally fluorescence coating 10b is heating and curing, wherein,
The proportioning of A glue and B glue is 1 in AB glue:1, the proportioning of AB glue and fluorescent material is according to fluorescence coating 10b folding
Rate is penetrated to determine, it is preferred that the refractive index of the fluorescence coating 10b is 1.43~1.5, and the quality of fluorescent material is general
1~2g, the quality of AB glue are generally 10g；
Step S3：Microstructured layers 20 are fitted in fluorescent material surface before fluorescent material is fully cured, then
Fluorescent material is fully cured to form fluorescence coating 10b, and make it that microstructured layers 20 and fluorescence coating 10b is mutually viscous
Close, expression is state of the fluorescent material between liquid and solid-state before fluorescent material is fully cured here,
Preferably, the refractive index of the fluorescence coating 10b is 1.43~1.5.
Wherein, the upper surface of microstructured layers 20 is provided with nanostructured 20a, and the nanostructured 20a is selected from
Nanometer cylinder that array is set, nanometer centrum or nano-hemisphere body it is any, it is preferred that the micro-structural
The refractive index of layer 20 is less than 1.43, and the specific manufacturing process of the microstructured layers 20 includes：PDMS is pre-
Polymers and curing agent are according to 10:1 proportioning is mixed and stirred for uniformly obtaining mixed solution, then to mixing
Solution is evacuated to bubble-free；Mixed solution after vacuumizing is cast in the mould with nanostructured 20a
Middle formation culture dish, after being evacuated to bubble-free to culture dish, the pumpdown time is 2 hours or so；It will take out
Culture dish after vacuum, which is positioned in drying box, to be solidified, and solidification temperature is 65 DEG C, and hardening time is 2 hours；
Finally the mixed solution after being fully cured is separated with mould and just forms the microstructured layers with nanostructured 20a
20。
LED COB structures proposed by the present invention and its method for packing, by being covered on COB fluorescent adhesive layers
Microstructured layers, nanostructured is provided with microstructured layers, can lift the light extraction efficiency of LED COB structures,
And the refractive index of protective layer, fluorescence coating and microstructured layers is from high to low, can be entered by such design
Light extraction efficiency, the increase shooting angle of the whole LED COB structures of lifting of one step.
Described above is only the embodiment of the application, it is noted that for the common of the art
For technical staff, on the premise of the application principle is not departed from, some improvements and modifications can also be made,
These improvements and modifications also should be regarded as the protection domain of the application.
Claims (11)
1. a kind of LED integrated encapsulation structures, it is characterised in that including substrate, set on the substrate
The encapsulation glue groove on surface and the microstructured layers being arranged above the encapsulation glue groove；Wherein,
The die bond groove array including multiple die bond grooves is offered in the encapsulation glue groove, each described die bond groove
Inside it is respectively arranged with LED chip；
Circuit board is additionally provided with the encapsulation glue groove, is offered on the circuit board and the die bond groove array
Corresponding opening, the LED chip are connected by wire with the circuit board,
The encapsulation glue groove is also filled with encapsulating glue-line, for the LED chip, the wire and institute
Circuit board is stated to be packaged.
2. LED integrated encapsulation structures according to claim 1, it is characterised in that the packaging plastic
Layer include it is corresponding be covered in the LED chip, the wire and the circuit board surface protective layer and
The fluorescence coating being covered on the protective layer.
3. LED integrated encapsulation structures according to claim 2, it is characterised in that the protective layer
Refractive index be more than 1.5.
4. LED integrated encapsulation structures according to claim 2, it is characterised in that the fluorescence coating
Refractive index be 1.43~1.5.
5. LED integrated encapsulation structures according to claim 1, it is characterised in that the micro-structural
The upper surface of layer is provided with nanostructured, and the nanostructured is selected from nanometer cylinder, the nanometer vertebra that array is set
It is any in body or nano-hemisphere body.
6. according to any described LED integrated encapsulation structures of Claims 1 to 5, it is characterised in that described
The material of microstructured layers is dimethyl silicone polymer, and the refractive index of the microstructured layers is less than 1.43.
A kind of 7. method for packing of LED integrated encapsulation structures as claimed in claim 2, it is characterised in that
It the described method comprises the following steps：
The protective layer is coated in the encapsulation glue groove so that the LED chip, the wire and institute
Circuit board is stated to be completely covered；
The fluorescent material is coated on protective layer after hardening so that the fluorescent material fills up the encapsulation
Glue groove；
The microstructured layers are fitted in the fluorescent material surface before the fluorescent material is fully cured, made
The fluorescent material forms the fluorescence coating after being fully cured, and makes the microstructured layers and the fluorescence coating phase
Mutually bonding.
8. method for packing according to claim 7, it is characterised in that the refractive index of the protective layer is big
In 1.5.
9. method for packing according to claim 7, it is characterised in that the refractive index of the fluorescence coating is
1.43~1.5.
10. method for packing according to claim 7, it is characterised in that the upper table of the microstructured layers
Face is provided with nanostructured, and the nanostructured is selected from nanometer cylinder, nanometer centrum or the nanometer that array is set
Hemisphere is any.
11. according to any described method for packing of claim 7~10, it is characterised in that the microstructured layers
Material be dimethyl silicone polymer, the refractive index of the microstructured layers is less than 1.43.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610298032.3A CN107346801A (en) | 2016-05-06 | 2016-05-06 | LED integrated encapsulation structures and its method for packing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610298032.3A CN107346801A (en) | 2016-05-06 | 2016-05-06 | LED integrated encapsulation structures and its method for packing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107346801A true CN107346801A (en) | 2017-11-14 |
Family
ID=60254008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610298032.3A Pending CN107346801A (en) | 2016-05-06 | 2016-05-06 | LED integrated encapsulation structures and its method for packing |
Country Status (1)
| Country | Link |
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| CN (1) | CN107346801A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682732A (en) * | 2018-07-23 | 2018-10-19 | 深圳市奥拓电子股份有限公司 | LED encapsulation structure and LED chip packaging method |
| CN109244220A (en) * | 2018-08-30 | 2019-01-18 | 上海九山电子科技有限公司 | A kind of LED luminescent panel and preparation method thereof, LED display |
| WO2020206790A1 (en) * | 2019-04-10 | 2020-10-15 | 惠州市华星光电技术有限公司 | Backlight module and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
| CN201838619U (en) * | 2010-05-24 | 2011-05-18 | 晶科电子（广州）有限公司 | Encapsulating structure capable of improving LED (light-emitting diode) external quantum efficiency |
| CN202434575U (en) * | 2011-11-26 | 2012-09-12 | 琉明斯光电科技股份有限公司 | Light emitting diode packaging structure of improving light extraction efficiency |
| CN203300701U (en) * | 2013-06-06 | 2013-11-20 | 歌尔声学股份有限公司 | Light emitting diode device |
| TWM495625U (en) * | 2014-09-15 | 2015-02-11 | Genesis Photonics Inc | Light emitting element structure |
| CN104882439A (en) * | 2012-09-29 | 2015-09-02 | 四川新力光源股份有限公司 | Led device |
-
2016
- 2016-05-06 CN CN201610298032.3A patent/CN107346801A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070012940A1 (en) * | 2005-07-14 | 2007-01-18 | Samsung Electro-Mechanics Co., Ltd. | Wavelength-convertible light emitting diode package |
| CN201838619U (en) * | 2010-05-24 | 2011-05-18 | 晶科电子（广州）有限公司 | Encapsulating structure capable of improving LED (light-emitting diode) external quantum efficiency |
| CN202434575U (en) * | 2011-11-26 | 2012-09-12 | 琉明斯光电科技股份有限公司 | Light emitting diode packaging structure of improving light extraction efficiency |
| CN104882439A (en) * | 2012-09-29 | 2015-09-02 | 四川新力光源股份有限公司 | Led device |
| CN203300701U (en) * | 2013-06-06 | 2013-11-20 | 歌尔声学股份有限公司 | Light emitting diode device |
| TWM495625U (en) * | 2014-09-15 | 2015-02-11 | Genesis Photonics Inc | Light emitting element structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108682732A (en) * | 2018-07-23 | 2018-10-19 | 深圳市奥拓电子股份有限公司 | LED encapsulation structure and LED chip packaging method |
| CN108682732B (en) * | 2018-07-23 | 2024-05-24 | 深圳市奥拓电子股份有限公司 | LED packaging structure and LED chip packaging method |
| CN109244220A (en) * | 2018-08-30 | 2019-01-18 | 上海九山电子科技有限公司 | A kind of LED luminescent panel and preparation method thereof, LED display |
| WO2020206790A1 (en) * | 2019-04-10 | 2020-10-15 | 惠州市华星光电技术有限公司 | Backlight module and display device |
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Application publication date: 20171114 |
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