CN101436625A - Packaging method for white light LED - Google Patents
Packaging method for white light LED Download PDFInfo
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- CN101436625A CN101436625A CNA2007100481571A CN200710048157A CN101436625A CN 101436625 A CN101436625 A CN 101436625A CN A2007100481571 A CNA2007100481571 A CN A2007100481571A CN 200710048157 A CN200710048157 A CN 200710048157A CN 101436625 A CN101436625 A CN 101436625A
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- emitting diode
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- white light
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Abstract
The invention relates to a method for encapsulating a white light emitting diode. The method comprises the following steps: (1) glue dispensing: insulating glue is dispensed into a reflecting cup of a bracket; (2) crystal solidification: prepared crystal grains are placed on the bracket dispensed with the insulating glue; (3) roasting after crystal solidification: a semifinished product of the solidified crystal grains is roasted in order that the crystal grains and the bracket are fixed and stuck; (4) wire welding: the anode and the cathode of the roasted crystal grains are conducted with two golden wires; (5) the preparation of fluorescent powder: according to proportion, a first caking agent taking polydimethylsiloxane as a main body, a second caking agent taking polymethyl hydrogen siloxane and polydimethylsiloxane as a main body and silicate fluorescent powder are prepared, stirred and fully mixed; (6) the dispensing of the fluorescent powder: a mixture prepared from the first caking agent, the second caking agent and the fluorescent powder is sequentially dispensed into the reflecting cup of the bracket; (7) roasting after the dispensing of the fluorescent powder: the bracket dispensed with the fluorescent powder is roasted; and (8) glue preparation, glue filling and the roasting after the glue filling.
Description
[technical field]
The present invention relates to a kind of light emitter diode seal method, or rather, relate to a kind of method for packing of white light emitting diode.
[background technology]
Light-emitting diode is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.White light emitting diode be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.Theoretical about 100000 hours of the life-span of light-emitting diode, but, from white light emitting diode product in the market, its life-span do not reach far away theoretical 100000 hours, generally in the time of 1000 hours, its light decay rate reaches more than 30%, thereby has shortened the life-span of white light emitting diode product to a great extent.
Encapsulating material is one of principal element that influences light decay of white light luminescent diode, and conventional at present light-emitting diode packaging material mainly comprises support, crystal-bonding adhesive, chip, fluorescent material, joins arogel etc.(1) support is to the influence of light decay of white light luminescent diode.The support of light-emitting diode mainly contains copper stent and retort stand.Copper stent heat conduction, conduct electricity very well.See also shown in Figure 1ly, this figure is under the kindred circumstances, the light decay experimental result of selecting for use copper stent and retort stand to encapsulate.Be not difficult to find out thus, light-emitting diode with the copper stent encapsulation is obviously slow than the light attenuation of light emitting diode of retort stand encapsulation, when the 8th week, differ about 10%, this mainly is because the heat conductivility of copper is more much better than iron, the conductive coefficient of copper is 398W/ (mK), and the conductive coefficient of iron has only about 50W/ (mK), only is the former 1/8.But the price of copper is higher, certainly will increase the cost of product, and has more significantly concerning the improvement of light decay only is relative iron and improve.(2) crystal-bonding adhesive is to the influence of light decay of white light luminescent diode.At present, the crystal-bonding adhesive of light-emitting diode mainly contains silver slurry and insulating cement etc.The two cuts both ways, and need take all factors into consideration when selecting for use.The thermal conductivity of silver slurry is good, can prolong the life-span of light-emitting diode, but the silver slurry is bigger to the absorptance of light, and it is a lot of to cause light efficiency to descend, under the similarity condition, with the silver slurry solid brilliant with the solid crystalline phase ratio of insulating cement, it is more that initial luminous flux can differ.For the blue chip of bipolar electrode, also very strict to the control of glue amount with the solid crystalline substance of silver slurry the time, otherwise cause short circuit easily.Use insulating cement, because poor thermal conductivity, the life-span of light-emitting diode is lower, and the control of some glue does not have the silver slurry so strict yet.See also shown in Figure 2ly, this figure is the light decay experimental result that adopts silver slurry and the solid brilliant white light emitting diode that encapsulates of insulating cement respectively.(3) fluorescent material is to the influence of light decay of white light luminescent diode.The approach that realizes white light emitting diode has multiple, at present the most generally, also the most ripe a kind of be by the fluorescent material of coating jaundice light on blue chip, make blue light become white light with yellow light mix.Fluorescent material mainly is the YAG yttrium aluminium garnet fluorescent powder.See also shown in Figure 3ly, this figure is the light decay curve with the white light emitting diode of two kinds of different fluorescent material encapsulation and blue light-emitting diode contrast.Compare with blue light-emitting diode, fluorescent material has the aging effect of white light emitting diode of quickening.(4) join the influence of arogel to light decay of white light luminescent diode.The super brightness white light emitting diode of conventional package is joined arogel and is generally adopted epoxy resin or traditional silica gel.As shown in Figure 4, this figure carries out the light decay result of experiment for joining powder with epoxy resin and traditional silica gel respectively.As can be seen, it is more a lot of than the length of epoxy numerical value to join life-span of white light emitting diode of powder with traditional silica gel.
But, above-mentioned various measures at present all do not have significantly to reduce the light decay of white light emitting diode basically, still fall short of the actual life of white light emitting diode, limited the application of white light emitting diode to a great extent at lighting field, therefore, a kind of new encapsulation technology of market in urgent need is to reduce the light decay of white light emitting diode significantly, effectively to promote the application of white light emitting diode at lighting field.
[summary of the invention]
Technical problem to be solved by this invention is to overcome above-mentioned defective, and a kind of method for packing of new white light emitting diode is provided, and the white light emitting diode by the encapsulation of this kind method for packing has advantages such as low light decay, long-life, high stability.
The present invention is achieved by the following technical solutions: a kind of method for packing of white light emitting diode comprises the steps:
Point glue is about to insulating cement and clicks and enters in the support reflector;
Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put;
Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion;
Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity;
Join fluorescent material, promptly take out first bonding agent in proportion, prepare, stir then, it is fully mixed based on second bonding agent, the silicate fluorescent powder of polymethyl hydrogen siloxane and dimethyl silicone polymer based on dimethyl silicone polymer;
Dot fluorescent powder is about to be clicked and entered successively in the support reflector that has welded gold thread by the composite that described first bonding agent, described second bonding agent, fluorescent material allotment form;
Toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point toasts, so that its curing; And join baking procedure behind glue, encapsulating, the encapsulating.
Described joining in the fluorescent material step, the ratio of first bonding agent, second bonding agent, fluorescent material is 3:3:1.
In the baking procedure, baking temperature is at the 130-150 degree behind the described dot fluorescent powder.
In the baking procedure, stoving time was at 1-2 hour behind the described dot fluorescent powder.
Behind the step dot fluorescent powder, before the baking, also have one to vacuumize step behind the step dot fluorescent powder, promptly the composite that is formed by first bonding agent, second bonding agent, fluorescent material allotment is carried out vacuum defoamation.
Described fluorescent material can be YAG yttrium aluminium garnet fluorescent powder, TAG terbium aluminium garnet fluorescent material, silicate fluorescent powder or sulphide fluorescent material.
Behind the step encapsulating, behind the step encapsulating, before the baking, also have one to vacuumize step.
Compared with prior art, the method for packing of white light emitting diode of the present invention is by adopting in joining the fluorescent material step by joining powder based on first bonding agent of dimethyl silicone polymer with based on the composite that second bonding agent allotment of polymethyl hydrogen siloxane and dimethyl silicone polymer forms, and to baking temperature, time is controlled, reduced the light decay rate of white light emitting diode widely, as when adopting standard 20mA current drives, the luminous flux of light-emitting diode has 4% rising in the time of 168 hours, during by 336 hours, still keep 4% climbing, during by 1000 hours, it optical attenuation still do not occur, and 3% rising is arranged, thereby improved significantly the life-span of white light emitting diode.
[description of drawings]
Fig. 1 is under the kindred circumstances, the light decay of white light luminescent diode experimental result curve chart of selecting for use copper stent and retort stand to encapsulate.
Fig. 2 is under the kindred circumstances, adopts the light decay of white light luminescent diode experimental result curve chart of silver slurry and the solid brilliant encapsulation of insulating cement respectively.
Fig. 3 is under the kindred circumstances, with the white light emitting diode of two kinds of different fluorescent material encapsulation and the light decay curve chart of blue light-emitting diode contrast.
Fig. 4 is under the kindred circumstances, and the white light emitting diode of joining powder with epoxy resin and traditional silica gel carries out light decay result of experiment curve chart respectively.
Fig. 5 is the encapsulation flow chart of white light emitting diode method for packing of the present invention.
Fig. 6 is under the kindred circumstances, during employing standard 20mA current drives, the composite that disclosed employing is formed by first bonding agent and the allotment of second bonding agent encapsulates and adopts traditional silica gel encapsulation and adopts epoxy encapsulation to carry out light decay result of experiment curve chart.
Fig. 7 is under the kindred circumstances, during employing standard 40mA current drives, the composite that disclosed employing is formed by first bonding agent and the allotment of second bonding agent encapsulates and adopts traditional silica gel encapsulation and adopts epoxy encapsulation to carry out light decay result of experiment curve chart.
[embodiment]
White light emitting diode according to method for packing encapsulation of the present invention comprises support, LED crystal particle, joins arogel and fluorescent material, described LED crystal particle is fixed on the support, described fluorescent material with join arogel and allocate in proportion, the described arogel of joining forms by allocating in proportion based on first bonding agent of dimethyl silicone polymer with based on second bonding agent of polymethyl hydrogen siloxane and dimethyl silicone polymer.
See also shown in Figure 5ly, the encapsulation process of the white light emitting diode that is disclosed in the present embodiment is for comprising the steps:
Step 1: some glue is about to insulating cement and clicks and enters in the support reflector.
Step 2: Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put.
Step 3:, make crystal grain and support fix adhesion Gu the baking of brilliant back is about to the semi-finished product of solid good crystal grain and puts into the high temperature baking box and toast.
Step 4: bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity.
Step 5: join fluorescent material, promptly in the ratio (quality of 3:3:1, down together) taking-up is prepared based on first bonding agent of dimethyl silicone polymer, based on second bonding agent, the silicate fluorescent powder of polymethyl hydrogen siloxane and dimethyl silicone polymer, stir then, it is fully mixed, and mixing time is about 5 minutes.
Step 6: vacuumize, promptly the composite that is formed by first bonding agent, second bonding agent, the allotment of carbonate fluorescent material is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 7: dot fluorescent powder, the composite that is formed by first bonding agent, second bonding agent, fluorescent material allotment that is about to have taken out vacuum is poured in the syringe of point gum machine, regulate the jelly amount after, it is clicked and entered in the support reflector that has welded gold thread successively.
Step 8: toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point is put into the high temperature baking box and is toasted, so that its curing, temperature is at the 130-150 degree, and stoving time was at 1-2 hour.
Step 9: join glue, be about to the good A of preheating, B agent epoxy glue, be generally the 1:1 ratio and prepare, and stir, so that it fully mixes by certain.
Step 10: vacuumize, promptly the composite of preparing in the step 9 is carried out vacuum defoamation, the pumpdown time is about 5-10 minute.
Step 11: encapsulating, promptly utilize the encapsulating machine that glue is injected in die cavity or the support successively.
Step 12: toast behind the encapsulating, promptly carry out high-temperature baking, the adhesive curing that makes in the step 11 to be injected, baking temperature is 125 degree, time 8-10 hour.
Step 13: cut pin: promptly utilize diel, separately with its both positive and negative polarity.
Step 14: beam split, promptly utilize light splitting machine, classify according to relevant electrical parameters such as the voltage of product, brightness, colors.
In the present embodiment, it is the LED crystal particle of 455-465nm that described chip is selected the blue light emitting wavelength for use, crystal-bonding adhesive is with insulating cement (slurry can certainly mine for silver), it (can certainly be the YAG yttrium aluminium garnet fluorescent powder that fluorescent material adopts silicate fluorescent powder, TAG terbium aluminium garnet fluorescent material or sulphide fluorescent material etc.), LED support adopts retort stand (can certainly adopt copper stent), joining arogel then forms by allocating in proportion based on first bonding agent of dimethyl silicone polymer with based on second bonding agent of polymethyl hydrogen siloxane and dimethyl silicone polymer, in the present embodiment, first bonding agent, the allotment ratio of second bonding agent is 1:1, described viscosity of joining arogel is 3.8pa.s, viscosity before described first bonding agent allotment is 5.7pa.s, viscosity before described second bonding agent allotment is 3.2pa.s, described fluorescent material, first bonding agent, the allotment ratio of second bonding agent is 1:3:3.
In order to verify the light decay situation of the white light emitting diode that above-mentioned method for packing is packaged, the present invention has done a large amount of experiments.See also shown in Figure 6, this figure is under the kindred circumstances, during employing standard 20mA current drives, adopt the composite that forms by first bonding agent and second bonding agent to encapsulate and adopt silica gel encapsulation and employing epoxy encapsulation to carry out light decay result of experiment curve chart.From this figure we as can be seen, sequence number 1 is the product of traditional silica gel encapsulation, has only 1% light decay rate in the time of 168 hours, but during by 336 hours, 7% decay occurred, and in the time of 1000 hours, its light decay rate reaches 28%.Sequence number 2 is the product of epoxy encapsulation, and existing 8% light decay rate during by 336 hours, has decayed 16% in the time of 168 hours, and during by 1000 hours, its light decay rate reaches 54%, and is very serious.The product that the composite that the employing that sequence number 3 discloses for the present invention is formed by first bonding agent and second bonding agent encapsulates, its luminous flux has 4% rising in the time of 168 hours, during by 336 hours, still keep 4% climbing, during by 1000 hours, it optical attenuation still do not occur, still keeps rising 3%.
The light decay situation of the white light emitting diode that the composite that is formed by first bonding agent and second bonding agent for the employing of further verifying the present invention's announcement encapsulates, when the inventor adopts standard 40mA current drives again, its light decay situation a large amount of experiments have been carried out.See also shown in Figure 7, when this figure was employing standard 40mA current drives, the composite that disclosed employing is formed by first bonding agent and second bonding agent encapsulated and adopts traditional silica gel encapsulation and adopts epoxy encapsulation to carry out light decay result of experiment curve chart.From this figure we as can be seen, sequence number 1 is the product of traditional silica gel encapsulation, occurs 42% light decay rate in the time of 168 hours, during by 504 hours, its light decay rate reaches 65%.Optical attenuation is very serious.Sequence number 2 is the product of epoxy encapsulation, occurs 41% light decay rate in the time of 168 hours, and during by 500 hours, its light decay rate reaches 79%, and optical attenuation is very serious.The product that the composite that the employing that sequence number 3 discloses for the present invention is formed by first bonding agent and second bonding agent encapsulates, its luminous flux has 3% rising in the time of 168 hours, during by 504 hours, still keeps 3% climbing, optical attenuation still do not occur.This shows that the product of epoxy resin or the traditional silica gel encapsulation more in the market of the white light emitting diode by the encapsulation of disclosed method for packing has very low light decay, the very long life-span.
Need to prove that above-mentioned kindred circumstances is meant: (1) each experiment is all carried out under same laboratory, same time period and environmental condition; (2) each test event all is 20 light-emitting diodes randomly drawing from some single tubes wherein, as the sample of test.
The present invention produces on the basis of a large amount of experiments, the inventor is through a series of experiment, the chip of a large amount of encapsulating materials and light-emitting diode is carried out matching test, the final composite of finding that use is formed in proportion by first bonding agent and second bonding agent is joined the powder encapsulation, can reduce the light decay rate of white light emitting diode widely, the life-span of improving white light emitting diode significantly.
More than describing is embodiments of the invention only, forgives and can understand, and under the prerequisite that does not depart from the present invention's design, to simple modification of the present invention and replacement, all should be included within the technical conceive of the present invention.
Claims (7)
1. the method for packing of a white light emitting diode comprises the steps:
Point glue is about to insulating cement and clicks and enters in the support reflector;
Gu brilliant, be about to above the support that ready prepd crystal grain is positioned over the insulating cement of having put;
Gu the baking of brilliant back, soon the semi-finished product of solid good crystal grain toast, and make crystal grain and support fix adhesion;
Bonding wire, the crystal grain that soon toasts out is drawn two gold threads at both positive and negative polarity;
Join fluorescent material, promptly take out first bonding agent in proportion, prepare, stir then, it is fully mixed based on second bonding agent, the silicate fluorescent powder of polymethyl hydrogen siloxane and dimethyl silicone polymer based on dimethyl silicone polymer;
Dot fluorescent powder is about to be clicked and entered successively in the support reflector that has welded gold thread by the composite that described first bonding agent, described second bonding agent, fluorescent material allotment form;
Toast behind the dot fluorescent powder, the support that is about to the good fluorescent material of point toasts, so that its curing; And
Join baking procedure behind glue, encapsulating, the encapsulating.
2. the method for packing of white light emitting diode according to claim 1, it is characterized in that: described joining in the fluorescent material step, the ratio of first bonding agent, second bonding agent, fluorescent material is 3: 3: 1.
3. the method for packing of white light emitting diode as claimed in claim 1 or 2, it is characterized in that: in the baking procedure, baking temperature is at the 130-150 degree behind the described dot fluorescent powder.
4. the method for packing of white light emitting diode as claimed in claim 1 or 2, it is characterized in that: in the baking procedure, stoving time was at 1-2 hour behind the described dot fluorescent powder.
5. the method for packing of white light emitting diode according to claim 1, it is characterized in that: behind the step dot fluorescent powder, before the baking, also have one to vacuumize step behind the step dot fluorescent powder, promptly the composite that is formed by first bonding agent, second bonding agent, fluorescent material allotment is carried out vacuum defoamation.
6. the method for packing of white light emitting diode according to claim 1, it is characterized in that: described fluorescent material can be YAG yttrium aluminium garnet fluorescent powder, TAG terbium aluminium garnet fluorescent material, silicate fluorescent powder or sulphide fluorescent material.
7. the method for packing of white light emitting diode according to claim 1 is characterized in that: before the baking, also have one to vacuumize step behind the step encapsulating, behind the step encapsulating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100481571A CN101436625A (en) | 2007-11-13 | 2007-11-13 | Packaging method for white light LED |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100481571A CN101436625A (en) | 2007-11-13 | 2007-11-13 | Packaging method for white light LED |
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| CN101436625A true CN101436625A (en) | 2009-05-20 |
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| CNA2007100481571A Pending CN101436625A (en) | 2007-11-13 | 2007-11-13 | Packaging method for white light LED |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101787254B (en) * | 2009-10-23 | 2012-07-04 | 中外合资江苏稳润光电有限公司 | Preparation method of white light LED gluewater |
| CN102569592A (en) * | 2010-12-13 | 2012-07-11 | 深圳市长方半导体照明股份有限公司 | LED packaging method, LED and LED illuminator |
| CN101787255B (en) * | 2009-10-23 | 2012-11-14 | 中外合资江苏稳润光电有限公司 | Preparation method of light-emitting diode insulation crystal-bonding adhesive |
| CN107546315A (en) * | 2017-07-14 | 2018-01-05 | 深圳市源磊科技有限公司 | A kind of method for packing for improving plug-in unit white LED lamp yellow circle |
| CN111211203A (en) * | 2018-11-21 | 2020-05-29 | 中广核达胜加速器技术有限公司 | LED packaging method for curing packaging adhesive by adopting electron accelerator |
-
2007
- 2007-11-13 CN CNA2007100481571A patent/CN101436625A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101787254B (en) * | 2009-10-23 | 2012-07-04 | 中外合资江苏稳润光电有限公司 | Preparation method of white light LED gluewater |
| CN101787255B (en) * | 2009-10-23 | 2012-11-14 | 中外合资江苏稳润光电有限公司 | Preparation method of light-emitting diode insulation crystal-bonding adhesive |
| CN102569592A (en) * | 2010-12-13 | 2012-07-11 | 深圳市长方半导体照明股份有限公司 | LED packaging method, LED and LED illuminator |
| CN102569592B (en) * | 2010-12-13 | 2015-05-27 | 深圳市长方半导体照明股份有限公司 | LED packaging method, LED and LED illuminator |
| CN107546315A (en) * | 2017-07-14 | 2018-01-05 | 深圳市源磊科技有限公司 | A kind of method for packing for improving plug-in unit white LED lamp yellow circle |
| CN111211203A (en) * | 2018-11-21 | 2020-05-29 | 中广核达胜加速器技术有限公司 | LED packaging method for curing packaging adhesive by adopting electron accelerator |
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Open date: 20090520 |