CN101787255B - Preparation method of light-emitting diode insulation crystal-bonding adhesive - Google Patents

Preparation method of light-emitting diode insulation crystal-bonding adhesive Download PDF

Info

Publication number
CN101787255B
CN101787255B CN2009102337042A CN200910233704A CN101787255B CN 101787255 B CN101787255 B CN 101787255B CN 2009102337042 A CN2009102337042 A CN 2009102337042A CN 200910233704 A CN200910233704 A CN 200910233704A CN 101787255 B CN101787255 B CN 101787255B
Authority
CN
China
Prior art keywords
nano
component
bonding adhesive
preparation
percentage composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009102337042A
Other languages
Chinese (zh)
Other versions
CN101787255A (en
Inventor
胡建红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Wenrun Optoelectronic Co Ltd
Original Assignee
Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd filed Critical Joint Venture Jiangsu Wenrun Optoelectronics Co Ltd
Priority to CN2009102337042A priority Critical patent/CN101787255B/en
Publication of CN101787255A publication Critical patent/CN101787255A/en
Application granted granted Critical
Publication of CN101787255B publication Critical patent/CN101787255B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses a preparation method of light-emitting diode (LED) insulation crystal-bonding adhesive. The raw materials comprise 10-20wt% of inorganic nanometer material, 10-20wt% of nano-AlN and the balance polysiloxane resin mixed by component A and component B. The preparation method comprises the following steps: (1) adopting polysiloxane resin containing component A and component B, mixing component A and component B in a weight ratio of 1:1, stirring evenly; (2) adding inorganic nanometer material, then stirring to mix evenly and ensure that the viscosity is not less than 35000cps; and (3) then adding nano-AlN, and stirring the mixed system evenly to obtain the finished product. The insulation crystal-bonding adhesive prepared by the method of the invention has excellent heat conductivity; and as polysiloxane resin is used as base material, the yellowing resistance and blackening resistance are greatly increased and the LED insulation crystal-bonding adhesive of the invention is far superior to the insulation crystal-bonding adhesive using epoxy resin as base material.

Description

A kind of preparation method of LED insulation crystal-bonding adhesive
Technical field
The present invention relates to a kind of preparation method of LED insulation crystal-bonding adhesive.
Background technology
Along with electronic devices and components and electronics develop to thin, light, little aspect, heat conduction, radiating insulating material just become a vital problem.When general electronic devices and components, 8 ℃ of working temperatures that surpass to allow when temperature, the life-span will reduce by 50%.Hence one can see that, and the quality of thermal design will produce very important influence to the life-span and the safety of electronic devices and components, electronics.In thermal design, the material of some good heat conductive insulatings and the process method of use if can be provided, will produce very considerable economic so.At present, the small power white light LEDs all adopts epoxy resins insulation glue as crystal-bonding adhesive, because the thermal conductivity of this insulation crystal-bonding adhesive is lower; Generally have only about 0.2w/m.k, cause LED when work, the heat that is produced can't fast and effeciently be derived and dispel the heat; Again because insulation paste is to adopt the epoxy resin base material to process, in secular use, insulation crystal-bonding adhesive xanthochromia, melanism are serious; The white light LEDs optical attenuation is increased greatly, when serious, when 25 spend, use 1000h; Light decay reaches more than 50%, can't satisfy the requirement of illumination level LED to light decay.
Summary of the invention
Technical problem
The object of the present invention is to provide a kind of preparation method of LED insulation crystal-bonding adhesive, prepared insulation crystal-bonding adhesive heat conductivility is excellent, and anti-xanthochromia, melanism performance also improve greatly.
Technical scheme
The present invention is achieved through following technical scheme.
A kind of preparation method of LED insulation crystal-bonding adhesive; Its raw material consists of: the quality percentage composition is 10~20% inorganic nano material; The quality percentage composition is 10~20% nanometer AlN, and all the other are A, B two-pack blended polyorganosiloxane resin, and its preparation process is following: the polyorganosiloxane resin of A, B two-pack is adopted in (1); The A component is mixed with the mass ratio of B component by 1: 1, and stir; (2) add inorganic nano material, stir then, mix, make its viscosity >=35000cps; (3) add nanometer AlN more therein, mixed system is stirred to get final product.
The preparation method of above-mentioned a kind of LED insulation crystal-bonding adhesive; Wherein, Said inorganic nano material is one or more the mixture in nano aluminium oxide, nano silicon, nano titanium oxide, nano magnesia or the nano oxidized gallium, and the particle size range of said inorganic nano material is 10~50nm.
The preparation method of above-mentioned a kind of LED insulation crystal-bonding adhesive, wherein, the particle size range of said nanometer AlN is 10~50nm.
The preparation method of above-mentioned a kind of LED insulation crystal-bonding adhesive, wherein, said A component is that the methyl phenyl vinyl polyorganosiloxane resin of 99.9%-99.98% and platinum catalyst that the quality percentage composition is 0.02%-0.1% are formed by the quality percentage composition.Said methyl phenyl vinyl polyorganosiloxane resin comprises C 6H 5SiO 3/2Unit and CH 2=CH (CH 3) 2SiO 1/2The unit.
The preparation method of above-mentioned a kind of LED insulation crystal-bonding adhesive; Wherein, said B component is that silica gel, the quality percentage composition of 80%-85% is that 5%-15% dimethyl hydrogen siloxy-phenyl silane and quality percentage composition are that two (dimethylvinylsiloxy) silane of phenylbenzene of 5%-10% are formed by the quality percentage composition.Said dimethyl hydrogen siloxy-phenyl silane chemical formula is [H (CH 3) 2SiO] 2Si (C 6H 5) 2Or [H (CH 3) 2SiO] 3Si (C 6H 5).
Beneficial effect
Insulation crystal-bonding adhesive heat conductivility by the method for the invention preparation is excellent; The thermal conductivity of the insulation crystal-bonding adhesive of epoxy resin-matrix has only 0.2W/m.K in the prior art; And the thermal conductivity of the insulation crystal-bonding adhesive of the method for the invention preparation reaches more than the 1.2W/m.K; Improve the heat conductivility of traditional insulation crystal-bonding adhesive greatly, also taken into account the balance of light transmission and thermal conductivity simultaneously, do not influenced the light extraction efficiency of original white light LEDs.Because adopt polyorganosiloxane resin as base material, its anti-xanthochromia, melanism performance improve greatly, are superior to the insulation crystal-bonding adhesive of epoxy resin base material greatly.As adopt traditional straight cutting retort stand encapsulation, and can produce and can use 1000h down at 25 ℃, average attenuation is 0 white light LEDs product.Epoxy resins insulation crystal-bonding adhesive point glue encapsulation operation technology is identical in the some glue packaging process of the insulation crystal-bonding adhesive of the method for the invention preparation and the prior art, also need not to change relevant device.
Description of drawings
Fig. 1 is the normal temperature longevity test reliability test report of polyorganosiloxane resin based insulation crystal-bonding adhesive of the present invention (WR-26 crystal-bonding adhesive);
Fig. 2 is the normal temperature longevity test reliability test report of the insulation crystal-bonding adhesive (DX-20-4 crystal-bonding adhesive) of epoxy resin-matrix;
Fig. 3 is the hot and humid test reliability trial report of lighting of polyorganosiloxane resin based insulation crystal-bonding adhesive of the present invention (WR-26 crystal-bonding adhesive);
Fig. 4 is the hot and humid test reliability trial report of lighting of the insulation crystal-bonding adhesive (DX-20-4 crystal-bonding adhesive) of epoxy resin-matrix.
Embodiment
Below through embodiment the present invention is described further:
A kind of preparation method of LED insulation crystal-bonding adhesive; Its raw material consists of: the quality percentage composition is 10~20% inorganic nano material; The quality percentage composition is 10~20% nanometer AlN, and all the other are A, B two-pack blended polyorganosiloxane resin, and its preparation process is following: the polyorganosiloxane resin of A, B two-pack is adopted in (1); The A component is mixed with the mass ratio of B component by 1: 1, and stir; (2) add inorganic nano material, stir then, mix, make its viscosity >=35000cps; (3) add nanometer AlN more therein, mixed system is stirred to get final product.
Embodiment 1
A kind of preparation method of LED insulation crystal-bonding adhesive; Its raw material consists of: the quality percentage composition is 15% nano aluminium oxide; The quality percentage composition is 10% nanometer AlN; All the other are A, B two-pack blended polyorganosiloxane resin; Its preparation process is following: the polyorganosiloxane resin of A, B two-pack is adopted in (1), and the A component is made up of the methyl phenyl vinyl polyorganosiloxane resin of 99.9wt% and the platinum catalyst of 0.1wt%, and the B component is made up of two (dimethylvinylsiloxy) silane of the phenylbenzene of silica gel, 15wt% dimethyl hydrogen siloxy-phenyl silane and the 5wt% of 80wt%; The A component is mixed with the mass ratio of B component by 1: 1, and stir; (2) nano aluminium oxide of adding 15wt% stirs then, mixes, and makes its viscosity >=35000cps; (3) and then add the nanometer AlN of 10wt%, mixed system is stirred to get final product.
Embodiment 2
A kind of preparation method of LED insulation crystal-bonding adhesive; Its raw material consists of: the quality percentage composition is 5% nano titanium oxide; The quality percentage composition is 5% nano magnesia; The quality percentage composition is 15% nanometer AlN, and all the other are A, B two-pack blended polyorganosiloxane resin, and its preparation process is following: the polyorganosiloxane resin of A, B two-pack is adopted in (1); The A component is made up of the methyl phenyl vinyl polyorganosiloxane resin of 99.92wt% and the platinum catalyst of 0.08wt%; The B component is made up of two (dimethylvinylsiloxy) silane of the phenylbenzene of silica gel, 10wt% dimethyl hydrogen siloxy-phenyl silane and the 7wt% of 83wt%, the A component is mixed with the mass ratio of B component by 1: 1, and stir; (2) add the nano titanium oxide of 5wt% and the nano magnesia of 5wt% and stir then, mix, make its viscosity >=35000cps; (3) and then add the nanometer AlN of 15wt%, mixed system is stirred to get final product.
Embodiment 3
A kind of preparation method of LED insulation crystal-bonding adhesive; Its raw material consists of: the quality percentage composition is 10% nano aluminium oxide; The quality percentage composition is 5% nano silicon; The quality percentage composition is 10% nanometer AlN, and all the other are A, B two-pack blended polyorganosiloxane resin, and its preparation process is following: the polyorganosiloxane resin of A, B two-pack is adopted in (1); The A component is made up of the methyl phenyl vinyl polyorganosiloxane resin of 99.98wt% and the platinum catalyst of 0.02wt%; The B component is made up of two (dimethylvinylsiloxy) silane of the phenylbenzene of silica gel, 15wt% dimethyl hydrogen siloxy-phenyl silane and the 5wt% of 80wt%, the A component is mixed with the mass ratio of B component by 1: 1, and stir; (2) add the nano aluminium oxide of 10wt% and the nano silicon of 5wt% and stir then, mix, make its viscosity >=35000cps; (3) and then add the nanometer AlN of 10wt%, mixed system is stirred to get final product.
Embodiment 4
A kind of preparation method of LED insulation crystal-bonding adhesive; Its raw material consists of: the quality percentage composition is 15% nano aluminium oxide; The quality percentage composition is 5% nano oxidized gallium; The quality percentage composition is 20% nanometer AlN, and all the other are A, B two-pack blended polyorganosiloxane resin, and its preparation process is following: the polyorganosiloxane resin of A, B two-pack is adopted in (1); The A component is made up of the methyl phenyl vinyl polyorganosiloxane resin of 99.9wt% and the platinum catalyst of 0.1wt%; The B component is made up of two (dimethylvinylsiloxy) silane of the phenylbenzene of silica gel, 5wt% dimethyl hydrogen siloxy-phenyl silane and the 10wt% of 85wt%, the A component is mixed with the mass ratio of B component by 1: 1, and stir; (2) add the nano aluminium oxide of 15wt% and the nano oxidized gallium of 5wt% and stir then, mix, make its viscosity >=35000cps; (3) and then add the nanometer AlN of 20wt%, mixed system is stirred to get final product.
The insulation crystal-bonding adhesive of the method for the invention preparation when not using, is stored in the refrigerator-freezer of 40 degrees below zero; During use, take out and at room temperature place 1~2 hour, and stir, can carry out a glue operation, be used for fixedly usefulness of LED wafer, baking condition:, toasted 1~2 hour at 120~150 ℃.

Claims (3)

1. the preparation method of a LED insulation crystal-bonding adhesive; It is characterized in that; Its raw material consists of: the quality percentage composition is one or more the mixture in 10~20% nano aluminium oxide, nano silicon, nano titanium oxide, nano magnesia or the nano oxidized gallium; The quality percentage composition is 10~20% nanometer AlN; All the other are A, B two-pack blended polyorganosiloxane resin, and said A component is that the methyl phenyl vinyl polyorganosiloxane resin of 99.9%-99.98% and platinum catalyst that the quality percentage composition is 0.02%-0.1% are formed by the quality percentage composition, and said methyl phenyl vinyl polyorganosiloxane resin comprises C 6H 5SiO 3/2Unit and CH 2=CH (CH 3) 2SiO 1/2The unit; Said B component is that silica gel, the quality percentage composition of 80%-85% is that 5%-15% dimethyl hydrogen siloxy-phenyl silane and quality percentage composition are that two (dimethylvinylsiloxy) silane of phenylbenzene of 5%-10% are formed by the quality percentage composition, and said dimethyl hydrogen siloxy-phenyl silane chemical formula is [H (CH 3) 2SiO] 2Si (C 6H 5) 2Or [H (CH 3) 2SiO] 3Si (C 6H 5), its preparation process is following: the polyorganosiloxane resin that A, B two-pack are adopted in (1), mix the A component, and stir with the mass ratio of B component by 1: 1; (2) mixture of one or more in adding nano aluminium oxide, nano silicon, nano titanium oxide, nano magnesia or the nano oxidized gallium stirs then, mixes, and makes its viscosity>=35000cps; (3) add nanometer AlN more therein, mixed system is stirred to get final product.
2. the preparation method of a kind of LED insulation crystal-bonding adhesive as claimed in claim 1 is characterized in that, the particle size range of said nano aluminium oxide, nano silicon, nano titanium oxide, nano magnesia or nano oxidized gallium is 10~50nm.
3. the preparation method of a kind of LED insulation crystal-bonding adhesive as claimed in claim 1 is characterized in that, the particle size range of said nanometer AlN is 10~50nm.
CN2009102337042A 2009-10-23 2009-10-23 Preparation method of light-emitting diode insulation crystal-bonding adhesive Active CN101787255B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009102337042A CN101787255B (en) 2009-10-23 2009-10-23 Preparation method of light-emitting diode insulation crystal-bonding adhesive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009102337042A CN101787255B (en) 2009-10-23 2009-10-23 Preparation method of light-emitting diode insulation crystal-bonding adhesive

Publications (2)

Publication Number Publication Date
CN101787255A CN101787255A (en) 2010-07-28
CN101787255B true CN101787255B (en) 2012-11-14

Family

ID=42530637

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009102337042A Active CN101787255B (en) 2009-10-23 2009-10-23 Preparation method of light-emitting diode insulation crystal-bonding adhesive

Country Status (1)

Country Link
CN (1) CN101787255B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11131431B2 (en) 2014-09-28 2021-09-28 Jiaxing Super Lighting Electric Appliance Co., Ltd LED tube lamp
CN102775954B (en) * 2012-08-18 2013-10-30 邵成芬 LED (Light-Emitting Diode) packaging silica gel with high refractive index, light transmittance and power, and method for preparing same
CN103013491B (en) * 2012-12-20 2015-06-10 纳晶科技股份有限公司 Silica gel fitting and fabrication method thereof, and LED lamp provided with silica gel fitting
CN205979260U (en) 2014-09-28 2017-02-22 嘉兴山蒲照明电器有限公司 LED (Light -emitting diode) straight lamp
US10560989B2 (en) 2014-09-28 2020-02-11 Jiaxing Super Lighting Electric Appliance Co., Ltd LED tube lamp
CN204693095U (en) * 2014-09-28 2015-10-07 嘉兴山蒲照明电器有限公司 Led daylight lamp
US10514134B2 (en) 2014-12-05 2019-12-24 Jiaxing Super Lighting Electric Appliance Co., Ltd LED tube lamp
CN104592922B (en) * 2014-12-31 2016-04-20 湖北绿色家园精细化工股份有限公司 A kind of transparent, high rigidity, color inhibition epoxy ornaments glue and preparation technology thereof
US9897265B2 (en) 2015-03-10 2018-02-20 Jiaxing Super Lighting Electric Appliance Co., Ltd. LED tube lamp having LED light strip
US10161569B2 (en) 2015-09-02 2018-12-25 Jiaxing Super Lighting Electric Appliance Co., Ltd LED tube lamp
CN112608583A (en) * 2020-12-04 2021-04-06 东莞智昊光电科技有限公司 Thermosetting composite material, application, LED bracket, preparation method of LED bracket and LED product

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101436625A (en) * 2007-11-13 2009-05-20 宁波安迪光电科技有限公司 Packaging method for white light LED

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101436625A (en) * 2007-11-13 2009-05-20 宁波安迪光电科技有限公司 Packaging method for white light LED

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2005-113059A 2005.04.28

Also Published As

Publication number Publication date
CN101787255A (en) 2010-07-28

Similar Documents

Publication Publication Date Title
CN101787255B (en) Preparation method of light-emitting diode insulation crystal-bonding adhesive
CN102337033B (en) Additive high-thermal-conductivity organic silicon electronic pouring sealant and preparation method thereof
CN103665879B (en) A kind of high-power LED encapsulation silicone gel composition
CN103865271B (en) A kind of preparation method of the modified organosilicon heat conductive electronic pouring sealant of nano-hybrid material
CN105038694B (en) A kind of dual composition addition type organosilicon bonding casting glue and its application method
CN103131381A (en) High-performance environmentally-friendly flame retardant type organic electron pouring sealant and preparation method thereof
CN101787254B (en) Preparation method of white light LED gluewater
CN104031388B (en) Phenyl siloxane rubber nanometer composite material and preparation method thereof
CN102952403A (en) Additive organosilicon heat-conducting electronic potting adhesive and manufacturing method thereof
CN103848990B (en) High index of refraction Vinylphenyl silicon resin is used in a kind of LED encapsulation
CN104910828B (en) Adhesive for LED (light emitting diode), adhesive preparation method and LED lamp
CN102675882A (en) Addition type heat-conducting anti-settling silicon rubber and preparation method thereof
CN103351627A (en) Addition type heat-conducting silicon rubber and preparation method thereof
CN103531693A (en) Preparation method for COB (chip on board) area light source with large irritation angle
CN104531022A (en) High-heat-conductivity insulating adhesive material and preparation method thereof
CN103773235A (en) Preparation method of primer for addition type organosilicone potting adhesive
CN106381121A (en) Transparent organic pouring sealant
CN110746926A (en) Self-adhesive heat-conducting flame-retardant two-component electronic encapsulating silicone rubber and preparation method thereof
CN103788872A (en) Primer for addition type organic silicon pouring sealant
CN114763459A (en) High-toughness thermal-aging-resistant fluorescent sizing material after curing
CN104559807A (en) Heat conduction adhesive
CN106634812A (en) Organic silicon resin pouring sealant with high thermal conductivity and low viscosity for PCB (Printed Circuit Board)
CN106753211A (en) A kind of flame-retarded heat-conducting PCB organic silicon electronic potting adhesive
CN106634814A (en) Organic silicon electronic pouring sealant with good ultraviolet-resisting cooling performance for PCB (Printed Circuit Board)
CN106753212A (en) A kind of good transparency of caking property PCB organic silicon electronic potting adhesive high

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: WENRUI PHOTOELECTRIC CO., LTD., JIANGSU

Free format text: FORMER NAME: JOINT VENTURE JIANGSU WENRUN OPTOELECTRONICS CO., LTD.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 212009 Zhenjiang City, Jiangsu Province Economic Development Zone, Road No. 88

Patentee after: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Address before: 212311 Zhenjiang City, Jiangsu Province Economic Development Zone, Road No. 88

Patentee before: Jiangsu Wenrun Optoelectronic Co.,Ltd.

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Preparation method of light-emitting diode insulation crystal-bonding adhesive

Effective date of registration: 20140306

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2014990000143

PLDC Enforcement, change and cancellation of contracts on pledge of patent right or utility model
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20150317

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2014990000143

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Preparation method of light-emitting diode insulation crystal-bonding adhesive

Effective date of registration: 20150318

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2015990000202

PLDC Enforcement, change and cancellation of contracts on pledge of patent right or utility model
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20160413

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2015990000202

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Preparation method of light-emitting diode insulation crystal-bonding adhesive

Effective date of registration: 20160413

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2016990000284

PLDC Enforcement, change and cancellation of contracts on pledge of patent right or utility model
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20170508

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2016990000284

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Preparation method of light-emitting diode insulation crystal-bonding adhesive

Effective date of registration: 20170508

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2017990000382

PC01 Cancellation of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20190520

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2017990000382

PE01 Entry into force of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Preparation method of light-emitting diode insulation crystal-bonding adhesive

Effective date of registration: 20190520

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2019990000450

PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20210629

Granted publication date: 20121114

Pledgee: The Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch of science and technology

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: 2019990000450

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A preparation method of LED insulating solid crystal adhesive

Effective date of registration: 20210706

Granted publication date: 20121114

Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: Y2021320000116

PE01 Entry into force of the registration of the contract for pledge of patent right
PC01 Cancellation of the registration of the contract for pledge of patent right

Date of cancellation: 20230626

Granted publication date: 20121114

Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: Y2021320000116

PC01 Cancellation of the registration of the contract for pledge of patent right
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: A Preparation Method of LED Insulating Solid Crystal Adhesive

Effective date of registration: 20230807

Granted publication date: 20121114

Pledgee: Bank of Jiangsu Limited by Share Ltd. Zhenjiang branch

Pledgor: JIANGSU WENRUN OPTOELECTRONIC Co.,Ltd.

Registration number: Y2023980051059

PE01 Entry into force of the registration of the contract for pledge of patent right