CN201758138U

CN201758138U - Packaging mechanism for high power LED

Info

Publication number: CN201758138U
Application number: CN2010201526204U
Authority: CN
Inventors: 李玉芝; 吉爱华
Original assignee: Weifang Guangsheng New Energy Co Ltd
Current assignee: Weifang Guangsheng New Energy Co Ltd
Priority date: 2010-04-01
Filing date: 2010-04-01
Publication date: 2011-03-09
Anticipated expiration: 2020-04-01

Abstract

The utility model discloses a packaging mechanism for a high power LED, which comprises a substrate, a heat conducting layer and an insulation layer arranged on the substrate, an electrode sheet and a chip body. With a proper design and low thermal resistance, the fluorescent light substratum of the chip body is composed of a mixing layer of YAG laser ceramics and glue; the YAG laser ceramics contained in the fluorescent light substratum boasts an excellent high temperature mechanical property, which means that the YAG laser ceramics coating can still have the function of changing blue lights into white lights and provide a soft color temperature even when a high power LED works for a while and the temperature thereof rises. Thereby, the service lifetime of a high power LED is greatly increased and the high power LED is made more reliable. In addition, a heat dissipation groove attached with a layer of rhodium oxide and arranged at the bottom surface of the metallic substrate substantially increases the heat dissipation of a LED and prevents components of the LED from being damaged by gathered heat thereon. All in all, the utility model has low thermal resistance, good heat dissipation effects, a long service lifetime and great reliability in practice.

Description

The encapsulating structure of great power LED

Technical field

The utility model relates to a kind of optical illumination device, relates in particular to a kind of encapsulating structure of great power LED.

Background technology

The encapsulating structure of traditional light-emitting diode (LED), generally be with conduction or non-conductive adhesive is contained in chip in the undersized reflector or on the slide holder, the inside and outside connection back of being finished device by spun gold forms with epoxy encapsulation, its thermal resistance is up to 300 ℃/W, so it can only be worked under little electric current below the 20mA and the condition less than 0.1W.And power-type (＞1W) LED is if adopt traditional packing forms, will cause junction temperature of chip to rise rapidly and epoxy carbonization flavescence because heat radiation is bad, cause the optical attenuation of device to quicken, even lost efficacy because the stress that thermal expansion rapidly produced causes open circuit until inefficacy.Therefore traditional package structure for LED is difficult to adapt to the heat radiation needs of 5W LED device, can't obtain stable light and export and keep higher device lifetime.

On the other hand, the main method of making white light LEDs at present is to utilize the nontransparent fluorescent material of blue-light LED chip coating molecule to make white light LEDs by wavelength Conversion.Because continuing to light, blue-ray LED can cause temperature to raise, material for transformation of wave length can be degenerated, simultaneously because the material for transformation of wave length of coating is a non-transparent material, the light that sends at blue light or ultraviolet chip by the time phenomenon such as scattering absorption can take place, make light extraction efficiency not high; Simultaneously because the inhomogeneous meeting of applied thickness has a strong impact on its hot spot and white light colour temperature.For example because problem such as the coating inhomogeneous yellow aperture that causes, blue hot spot, white light colour temperature be inconsistent.

The utility model content

Technical problem to be solved in the utility model provides that a kind of thermal resistance is low, heat radiation is good, the large-power light-emitting diodes of long service life.

For solving the problems of the technologies described above, the technical solution of the utility model is: the encapsulating structure of great power LED comprises metal substrate; Heat-conducting layer, described heat-conducting layer is located at the upper surface of described metal substrate; Insulating barrier, described insulating barrier is located at the upper surface of described heat-conducting layer; Electrode slice, described electrode slice comprises electrode film and negative electrode plate, described electrode film and negative electrode plate are fixed on the upper surface of described insulating barrier; Chip body, described chip body comprises built-in led chip and is coated on the fluorescence glue-line of described led chip periphery, the positive and negative electrode pin of described led chip stretches out outside the described fluorescence glue-line, and described chip body is fixed on the described insulating barrier and described both positive and negative polarity pin is connected with negative electrode plate with described electrode film respectively.

As a kind of optimized technical scheme, the fluorescence glue-line of described fluorescence glue-line for adopting YAG laser ceramics and glue to mix.

As a kind of optimized technical scheme, the bottom surface of described metal substrate is provided with some radiating grooves with rhodium oxide layer.

As a kind of optimized technical scheme, described heat-conducting layer and described insulating barrier are for adopting the aluminium nitride ceramics layer of aluminium nitride ceramics material.

As a kind of optimized technical scheme, described heat-conducting layer is for adopting the aluminium nitride ceramics layer of aluminium nitride ceramics material, and described insulating barrier is for adopting the insulating thin layer of insulating film material.

As a kind of optimized technical scheme, the electrode film of described electrode slice comprises several first sheet metals, and described first sheet metal is arranged into arcuation by lead series connection and described first sheet metal; The negative electrode plate of described electrode slice comprises several second sheet metals, and described second sheet metal is arranged into arcuation by lead series connection and described second sheet metal.

As a kind of optimized technical scheme, described metal substrate is an aluminium base.

Adopted technique scheme, the beneficial effects of the utility model: because the encapsulating structure of this great power LED, comprise substrate, heat-conducting layer and insulating barrier are set on the substrate, and then installing electrodes sheet and chip body, reasonable in design, thermal resistance is low, and the fluorescence glue-line of described chip body adopts the fluorescence glue-line of the mixing of YAG laser ceramics and glue, the YAG laser ceramics has excellent mechanical behavior under high temperature, after making great power LED work a period of time, even temperature raises, YAG laser ceramics coating still can normally be brought into play the effect that blue light changes white light in the fluorescence glue-line, and colour temperature is soft, thereby, in the useful life of having improved great power LED, strengthened reliability.In addition, the radiating groove of having rhodium oxide layer is set, can strengthens radiating effect, prevent the too high damage device of temperature that heat accumulation brings in the bottom surface of Base Metal substrate.In a word, the utlity model has that thermal resistance is low, heat radiation is good, and long service life and good reliability.

Description of drawings

Below in conjunction with the drawings and specific embodiments the utility model is further described:

Fig. 1 is the structural representation of the utility model embodiment;

Fig. 2 is the vertical view of Fig. 1;

Among the figure: 1, metal substrate; 2, aluminium nitride ceramics layer; 3, pin; 4, optical lens; 5, fluorescence glue-line; 6, led chip; 7, radiating groove; 8, electrode slice; 81, second sheet metal; 82, first sheet metal.

Embodiment

The encapsulating structure of great power LED as depicted in figs. 1 and 2, comprising: metal substrate 1, and the preferred Bei Gesi aluminium base of present embodiment, the bottom surface of present embodiment Bei Gesi aluminium base is provided with three radiating grooves 7 with rhodium oxide; At described metal substrate 1 upper surface processing aluminium nitride pottery layer, because described aluminium nitride ceramics has high-termal conductivity and insulating properties, so the aluminium nitride ceramics layer 2 that present embodiment adopts one deck to be made by aluminium nitride ceramics material is promptly as heat-conducting layer, again as insulating barrier; On described aluminium nitride ceramics layer 2, paste electrode slice 8, described electrode slice 8 comprises electrode film and negative electrode plate, described electrode film comprises three first sheet metals 82, and described first sheet metal 82 is arranged into arcuation by lead series connection and described first sheet metal 82; Described negative electrode plate comprises three second sheet metals 81, and described second sheet metal 81 is arranged into arcuation by lead series connection and described second sheet metal 81, and described positive, negative electrode plate scatters and is a circle; Chip body, described chip body comprises built-in led chip 6 and is coated on the fluorescence glue-line 5 of described led chip 6 peripheries, the positive and negative electrode pin 3 of described led chip 6 stretches out outside the described fluorescence glue-line 5, described chip body is by the upper surface centre position of eutectic machine eutectic to described aluminium nitride ceramics layer 2, and described both positive and negative polarity pin 3 is connected with negative electrode plate with described electrode film respectively, the fluorescence glue-line that the fluorescence glue-line 5 of present embodiment selects for use YAG laser ceramics and silica gel (perhaps epoxy resin etc.) to mix; Be covered with optical lens 4 at described fluorescence glue-line 5.

In addition, also can add one deck insulating thin layer on the aluminium nitride ceramics layer 2 of the present utility model again, further reduce thermal resistance as insulating barrier.

The known technology of the YAG laser ceramics among the utility model embodiment: the YAG powder can be used as fluorescent material by trivalent rare earth ionses such as doping Tb, Ce, Eu, YAG fluorescent material main component is: (Y2Gd) 3 (Al2Ga) 5012, be generally yellow, pale yellow powder shape material, have a wide range of applications in field of light emitting materials; Compare with the YAG monocrystal material, the YAG laser ceramics has the following advantages: the manufacturing cycle of pottery is short, and cost is low; Can mix in the ceramic material than the neodymium ion of higher concentration in the crystal and do not have concentration quenching, improve conversion efficiency; Pottery preparation technology can obtain the large scale working-laser material; Because have excellent mechanical behavior under high temperature, the YAG pottery can also be widely used as high-temperature structural components simultaneously; The YAG laser ceramics is mainly yttrium-aluminium-garnet, and ((mixed Nd3+, Er3+, Yb3+, Tm3+, Cr4+ plasma of Y3ScAl4012 → YSAG) realized for Y3A15012 → YAG) or yttrium scandium aluminium garnet.

The use principle of the YAG laser ceramics in the present embodiment: when general fluorescent glue uses, after the luminous work of great power LED a period of time, the great power LED temperature raises, and fluorescent material at high temperature expands, when great power LED quits work, temperature reduces, fluorescent material shrinks, and the easy like this uniformity of fluorescence glue-line 5 blending constituents that causes changes, and influences the normal performance of fluorescence glue-line 5, make great power LED after working long hours, do not reach normal user mode; And because the YAG laser ceramics has the good high-temperature mechanical property, particularly at high temperature the elasticity of YAG laser ceramics particle is still very strong, make YAG laser ceramics performance at high temperature still stablize performance, guarantee the long-time operate as normal of great power LED, thereby improved the useful life and the reliability of great power LED.

In actual production, the used ceramic particle size of YAG laser ceramics layer is between 50nm-100nm, the thickness of YAG laser ceramics layer will suitably be adjusted according to the watt level of blue light/ultraviolet chip, by adjusting the chromaticity coordinates that ceramic layer thickness and grain density change the light that sends.Between the 450nm-480nm wave band, the correlated colour temperature that obtains white light after the conversion is between 2700K-10000K as the wavelength of the blue-ray LED luminescence chip that uses.

Therefore the radiating groove 7 that the utility model passes through to have rhodium oxide layer in the setting of metal substrate bottom surface greatly reduces the thermal resistance after entire product encapsulates to increase area of dissipation, has improved heat dispersion.Adopt on the fluorescence glue-line of great power LED and cover high temperature resistant YAG laser ceramics layer, improved reliability, strengthened the useful life of high-power LED.

The foregoing description only is giving an example of the utility model embodiment; protection range of the present utility model is as the criterion with the content of claim; any equivalent transformation that carries out based on technology enlightenment of the present utility model is also within protection range of the present utility model.

Claims

1. the encapsulating structure of great power LED is characterized in that: comprise

Metal substrate;

Heat-conducting layer, described heat-conducting layer is located at the upper surface of described metal substrate;

Insulating barrier, described insulating barrier is located at the upper surface of described heat-conducting layer;

Electrode slice, described electrode slice comprises electrode film and negative electrode plate, described electrode film and negative electrode plate are fixed on the upper surface of described insulating barrier;

Chip body, described chip body comprises built-in led chip and is coated on the fluorescence glue-line of described led chip periphery, the positive and negative electrode pin of described led chip stretches out outside the described fluorescence glue-line, and described chip body is fixed on the described insulating barrier and described both positive and negative polarity pin is connected with negative electrode plate with described electrode film respectively.

2. the encapsulating structure of great power LED as claimed in claim 1 is characterized in that: the bottom surface of described metal substrate is provided with some radiating grooves with rhodium oxide layer.

3. the encapsulating structure of great power LED as claimed in claim 1 or 2 is characterized in that: described heat-conducting layer and described insulating barrier are for adopting the aluminium nitride ceramics layer of aluminium nitride ceramics material.

4. the packaging mechanism of great power LED as claimed in claim 1 or 2 is characterized in that: described heat-conducting layer is for adopting the aluminium nitride ceramics layer of aluminium nitride ceramics material, and described insulating barrier is for adopting the insulating thin layer of insulating film material.

5. the encapsulating structure of great power LED as claimed in claim 3, it is characterized in that: the electrode film of described electrode slice comprises several first sheet metals, described first sheet metal is arranged into arcuation by lead series connection and described first sheet metal; The negative electrode plate of described electrode slice comprises several second sheet metals, and described second sheet metal is arranged into arcuation by lead series connection and described second sheet metal.

6. the encapsulating structure of great power LED as claimed in claim 3, it is characterized in that: described metal substrate is an aluminium base.