CN201820795U - High-power LED encapsulating structure - Google Patents

High-power LED encapsulating structure Download PDF

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Publication number
CN201820795U
CN201820795U CN2010205810784U CN201020581078U CN201820795U CN 201820795 U CN201820795 U CN 201820795U CN 2010205810784 U CN2010205810784 U CN 2010205810784U CN 201020581078 U CN201020581078 U CN 201020581078U CN 201820795 U CN201820795 U CN 201820795U
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CN
China
Prior art keywords
led chip
glue layer
fluorescent
substrate
fluorescent glue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010205810784U
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Chinese (zh)
Inventor
万喜红
雷玉厚
罗龙
易胤炜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD.
Original Assignee
LIGHTING OPTOECTRONIC(SZ) CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to CN2010205810784U priority Critical patent/CN201820795U/en
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Publication of CN201820795U publication Critical patent/CN201820795U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The embodiment of the utility model relates to a high-power LED encapsulating structure comprising a baseplate, an LED chip fixed on the baseplate, a wall structure formed around the LED chip through pressure casting, a fluorescent glue layer formed by fluorescent glue dotted in the wall structure, a first transparent glue layer applied between the LED chip and the fluorescent glue layer, and a second transparent glue layer formed outside the wall structure through pressure casting. The fluorescent glue layer formed by the fluorescent glue dotted in the wall structure is uniform in thickness. Fluorescent powder in the fluorescent glue layer is distributed uniformly so that uniformity and consistency of the color temperature of an illuminant space can be better achieved. Due to the arrangement of the first transparent glue layer between the LED chip and the fluorescent glue layer, that the product has the defects of low reliability and large light attenuation as a result of the fluorescent powder being in direct contact with the LED chip with high heat productivity and the baseplate can be overcome.

Description

High-power LED encapsulation structure
Technical field
The utility model relates to the LED encapsulation technology, relates in particular to a kind of high-power LED encapsulation structure.
Background technology
Traditional high-power LED encapsulation structure is that led chip is fixed on the substrate, and the glue spots that will be furnished with fluorescent material and then is injected layer of transparent glue through the baking aftershaping around chip again.The inventor is in implementing the utility model process, there is following technical problem at least in the LED encapsulating structure of finding prior art: 1, owing to the glue of being furnished with fluorescent material is directly put around the chip, the variable thickness of fluorescent glue causes and the fluorescent material skewness can cause the space colour temperature of whole light source inconsistent.2, can reduce adhesion between colloid and the substrate because fluorescent material is deposited to substrate surface, LED lights between colloid and the substrate for a long time layering can occur, reduces reliability of products; 3, fluorescent material is direct contacts with the high chip of caloric value, also can reduce reliability of products, and light decay is relatively large.
The utility model content
The utility model embodiment technical problem to be solved is, a kind of high-power LED encapsulation structure is provided, and to realize light source space colour temperature uniformity, light decay is less, and reliability is higher.
For solving the problems of the technologies described above, the utility model provides a kind of high-power LED encapsulation structure, comprising:
Substrate;
Be fixed on the led chip of described substrate one side;
The fence structure that pressure injection forms around described led chip;
The fluorescence glue-line that forms by the fluorescent glue of clicking and entering in the described fence structure;
Second substratum transparent that pressure injection forms outside described fence structure.
Further, described LED encapsulating structure also comprises first substratum transparent that is coated between described led chip and the fluorescence glue-line.
Further, described substrate is metal substrate or ceramic substrate.
Further, the colloid of described fence structure, described first substratum transparent and described second substratum transparent is silica gel.
Technique scheme has following beneficial effect at least:
1, the encapsulating structure of the utility model embodiment is by pressure injection fence structure around led chip, and fluorescent glue clicked and entered in the fence structure form the uniform fluorescence glue-line of thickness, its inner fluorescent material is evenly distributed and can realizes light source space colour temperature uniformity consistency preferably;
2, the LED encapsulating structure of the utility model embodiment is coated with first substratum transparent between fluorescence glue-line and led chip and substrate, can solve owing to fluorescent material directly and the high led chip of caloric value and the substrate defective that product reliability is low, light decay is bigger that contacts and cause.
Description of drawings
Fig. 1 is the schematic diagram of high-power LED encapsulation structure one embodiment of the present utility model.
Embodiment
Below in conjunction with accompanying drawing the utility model embodiment is described in further detail.
The high-power LED encapsulation structure that provided of the utility model embodiment comprises: substrate 1, led chip 2, fence structure 3, fluorescence glue-line 4 and second substratum transparent 5 as shown in Figure 1.
Wherein led chip 2 is fixed on the side of substrate 1, fence structure 3 with led chip 2 be the center pressure injection around led chip 2, this fence structure 3 can also can adopt square silica gel enclosing wall for being the annular silica gel enclosing wall at center with led chip 2; Clicking and entering the liquid glue of being furnished with fluorescent material in fence structure 3 inside is the transparent silicon glue-line of pressure injection outside fence structure 3 to form uniform fluorescence glue-line 4, the second substratum transparents 5 of thickness, is hemispherical.Wherein, substrate 1 can adopt metal substrate or ceramic substrate.
By in fence structure 3, clicking and entering fluorescent glue, can form have regular shape, the uniform fluorescence glue-line 4 of thickness, the distribution of the fluorescent material of fluorescence glue-line 4 inside is also comparatively even, can realize light source space colour temperature uniformity consistency preferably.
The utility model LED encapsulating structure also comprises first substratum transparent 6 that is coated between described led chip 2 and the fluorescence glue-line 4.Wherein the colloid of the fence structure 3 and first substratum transparent 6 is silica gel, and first substratum transparent 6 can prevent that fluorescent material from directly contacting with the high led chip 2 of caloric value, improves reliability of products, reduces light decay; First substratum transparent 6 can prevent that also the fluorescent material of fluorescence glue-line 4 is deposited in the contact surface of colloid and substrate 1, thereby improves the adhesion between colloid and the substrate 1.
The LED encapsulating structure of the utility model embodiment is interior to form the uniform fluorescence glue-line 4 of thickness by fluorescent glue being clicked and entered fence structure 3, and the fluorescent material distribution uniform of fluorescence glue-line 4 inside can realize light source space colour temperature uniformity consistency preferably; Between led chip 2 and fluorescence glue-line 4, apply first substratum transparent 6, can solve because the defective that product reliability is low, light decay is bigger that led chip 2 that fluorescent material is direct and caloric value is high and substrate 1 contact and cause.
The above is an embodiment of the present utility model; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also are considered as protection range of the present utility model.

Claims (4)

1. a high-power LED encapsulation structure is characterized in that, comprising:
Substrate;
Be fixed on the led chip of described substrate one side;
The fence structure that pressure injection forms around described led chip;
The fluorescence glue-line that forms by the fluorescent glue of clicking and entering in the described fence structure;
Second substratum transparent that pressure injection forms outside described fence structure.
2. high-power LED encapsulation structure as claimed in claim 1 is characterized in that, described LED encapsulating structure also comprises first substratum transparent that is coated between described led chip and the fluorescence glue-line.
3. high-power LED encapsulation structure as claimed in claim 1 is characterized in that, described substrate is metal substrate or ceramic substrate.
4. high-power LED encapsulation structure as claimed in claim 1 is characterized in that, the colloid of described fence structure, described first substratum transparent and described second substratum transparent is silica gel.
CN2010205810784U 2010-10-28 2010-10-28 High-power LED encapsulating structure Expired - Fee Related CN201820795U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010205810784U CN201820795U (en) 2010-10-28 2010-10-28 High-power LED encapsulating structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010205810784U CN201820795U (en) 2010-10-28 2010-10-28 High-power LED encapsulating structure

Publications (1)

Publication Number Publication Date
CN201820795U true CN201820795U (en) 2011-05-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010205810784U Expired - Fee Related CN201820795U (en) 2010-10-28 2010-10-28 High-power LED encapsulating structure

Country Status (1)

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CN (1) CN201820795U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102506316A (en) * 2011-10-24 2012-06-20 宁波市佰仕电器有限公司 Light diffusion light-emitting diode (LED) lamp
CN102593322A (en) * 2012-02-21 2012-07-18 广东德豪润达电气股份有限公司 Cofferdam for coating fluorescent powder layer of LED (Light-Emitting Diode) chip and manufacturing method and application thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102506316A (en) * 2011-10-24 2012-06-20 宁波市佰仕电器有限公司 Light diffusion light-emitting diode (LED) lamp
CN102593322A (en) * 2012-02-21 2012-07-18 广东德豪润达电气股份有限公司 Cofferdam for coating fluorescent powder layer of LED (Light-Emitting Diode) chip and manufacturing method and application thereof
CN102593322B (en) * 2012-02-21 2014-12-10 广东德豪润达电气股份有限公司 Cofferdam for coating fluorescent powder layer of LED (Light-Emitting Diode) chip and manufacturing method and application thereof

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171017

Address after: The Town Lake Anxi County of Quanzhou City, Fujian province 362411 Photoelectric Industrial Park

Patentee after: FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD.

Address before: Nanshan District Xili Town, Shenzhen city Guangdong province 518000 new village Shiling Industrial District eight building 5 floor

Patentee before: Lighting Optoectronic(SZ) Co., Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110504

Termination date: 20191028

CF01 Termination of patent right due to non-payment of annual fee