CN106299039B - A kind of packaging process and panel of composite LED glass base plane - Google Patents
A kind of packaging process and panel of composite LED glass base plane Download PDFInfo
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- CN106299039B CN106299039B CN201510355325.6A CN201510355325A CN106299039B CN 106299039 B CN106299039 B CN 106299039B CN 201510355325 A CN201510355325 A CN 201510355325A CN 106299039 B CN106299039 B CN 106299039B
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- 239000011521 glass Substances 0.000 title claims abstract description 117
- 239000002131 composite material Substances 0.000 title claims abstract description 38
- 238000012858 packaging process Methods 0.000 title claims abstract description 15
- 235000012431 wafers Nutrition 0.000 claims abstract description 60
- 239000011159 matrix material Substances 0.000 claims abstract description 51
- 239000000843 powder Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000006071 cream Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 35
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to the packaging process and panel of a kind of composite LED glass base plane, comprising: prepares glass substrate, glass substrate includes the matrix pit slot for being packed into multiple LED wafers；The section of each pit slot is rectangle or dove-tail form in matrix pit slot；By multiple LED wafers according to design and layout at cell array, the pit slot position of multiple LED wafer positions and matrix pit slot in cell array is corresponded；The barrier structure of matrix pit slot is made, and fills low glass powder solution or transparent glass cream into the matrix pit slot with barrier structure；By the suction nozzle of the vacuum slot matrix die head on the male model of heating and cooling system, pick up multiple LED wafers, move to master mold opposite position, make the light-emitting surface of multiple LED wafers in corresponding matrix pit slot low glass powder solution or transparent glass cream combine；Heating and cooling system cooling is controlled, makes multiple LED wafer die bonds into corresponding matrix pit slot, obtains the composite LED glass base plane.
Description
Technical field
The present invention relates to the packaging process and face of semiconductor field more particularly to a kind of composite LED glass base plane
Plate.
Background technique
The manufacture craft of traditional semiconductor light emitting chip, will first encapsulate (PACKAGE), then again before downstream application
The circuit carrier (such as PCB) that chip after encapsulation is fixed on application product is realized into relevant electric connection and function up.
Encapsulation process is fixedly mounted using such as conductive elargol mainly on reasonable bracket (FRAME)
One of electrode of chip simultaneously realizes electric connection, then again by ultrasonic wire welding machine another electrode gold of chip
Line or aluminum steel etc. are welded and connected to another independent electrical pin of bracket；Finally again with materials such as transparent epoxy resins brilliant
The casting moulds casting that piece, a part of bracket and gold thread or aluminum steel for connecting them etc. one reinstates well in advance seals.Have
Partially the pin of electrical bracket is exposed, can be used as progress surface mount (SMT) when matching with other electronic devices
Connection or dual-inline package (DIP) etc., which are mounted on the conductive support (such as PCB) of application product, to be used.
In traditional packaging process, due to needing lead welding, opaque gold will necessarily be left on light-emitting surface
The melting welding point such as line or aluminum steel, the light emission that these melting welding points can cover part goes out, and can stay in the hot spot of individual point light source
Under withered sky " black " heart point, and thus luminescent wafer made from method is not uniform light spots as ideal point light source.
At the same time, high in small spacing to light emitting semiconductor device in the case where semiconductor light emitting application is more universal
Application and low cost under density size etc. are proposed huge requirement.
Summary of the invention
In view of this, the present invention provides a kind of packaging process of composite LED glass base plane, the process
Simply, be suitable for large-scale production and application makes by using the cryogenic glass powder or transparent glass cream of melting as die bond medium
It is transparent for obtaining after it solidifies, and not will form the hot spot for influencing light transmission, and the panel transmission being prepared is not less than 85%, display
Effect and consistency are good, and process costs are low, can satisfy the needs that LED display technique is applied in high density field.
In a first aspect, the present invention provides a kind of packaging process of composite LED glass base plane, comprising:
Glass substrate is prepared, the glass substrate includes the matrix pit slot for being packed into multiple LED wafers；The matrix hole
The section of each pit slot is rectangle or dove-tail form in slot；
Multiple LED wafer positions by the multiple LED wafer according to design and layout at cell array, in the cell array
It sets and is corresponded with the pit slot position of the matrix pit slot；
The barrier structure of matrix pit slot is made, and fills low glass powder solution or saturating into the matrix pit slot with barrier structure
Bright glass cream；
By the suction nozzle of the vacuum slot matrix die head on the male model of heating and cooling system, the multiple LED wafer is picked up,
Move to master mold opposite position, make the light-emitting surface of the multiple LED wafer and the low glass powder solution in corresponding matrix pit slot
Or transparent glass cream combines；
The heating and cooling system cooling is controlled, makes multiple LED wafer die bonds into corresponding matrix pit slot, obtains institute
State composite LED glass base plane.
Preferably, the bottom surface of the pit slot is finished to mirror transparent, and the side of pit slot is rough surface.
Preferably, the barrier structure of the production matrix pit slot, and fill into the matrix pit slot with barrier structure low
Glass powder solution or transparent glass cream specifically include:
The glass substrate is placed in the master mold of the heating and cooling system, is higher than the transparent of low glass powder with melting temperature
Glass cream cooperation limit mold blocks the end of the pit slot, forms the barrier structure；
Glass substrate loads appropriate low glass powder solution or transparent glass cream to 400 DEG C or more in pit slot.
Preferably, the barrier structure of the production matrix pit slot, and fill into the matrix pit slot with barrier structure low
Glass powder solution or transparent glass cream specifically include:
Resistance bonding pretreatment is carried out to the bottom surface of the glass substrate, the barrier structure is formed, retains the pit slot
Side is bonding face；
The glass substrate is placed in the master mold for filling low glass powder melt or transparent glass cream, is made in the matrix pit slot
Fill low glass powder solution or transparent glass cream.
Preferably, in the corresponding position that the multiple LED wafer is packed into the matrix pit slot according to design and layout
Before further include:
Prepare LED wafer；
LED wafer is tested, to be grouped according to different test results to the LED wafer；
Wafer matrix will be formed on the LED wafer reverse mould to expanded film；The light out of the expanded film and the LED wafer
It mutually pastes in face；
The expanded film is stretched, the wafer matrix is carried out to expand crystalline substance, forms the cell array.
It is further preferred that the LED wafer includes multi-colored led chip.
It is further preferred that the multi-colored led chip includes: that red LED chip, blue led chip and green LED are brilliant
Piece；
In the cell array, the red LED chip, blue led chip and green LED chip are equidistant at equal intervals
Arrangement.
Preferably, the method also includes:
The electrode side of LED wafer in the composite LED glass base plane is polished directly；
The composite LED glass base plane is annealed；
After cleaning, drying, tested；
The composite LED glass base plane packed for standby use that test is passed through.
Second aspect, the embodiment of the invention provides a kind of composite LED glass bases for the method preparation that first aspect provides
Panel.
A kind of packaging process of composite LED glass base plane provided in an embodiment of the present invention, process is simple, fits
In large-scale production and application, by using the cryogenic glass powder or transparent glass glue of melting as die bond medium, so that it solidifies
Be afterwards it is transparent, not will form influence light transmission hot spot, the panel transmission being prepared be not less than 85%, display effect and one
Cause property is good, and process costs are low, can satisfy the needs that LED display technique is applied in high density field.
Detailed description of the invention
Fig. 1 is the flow chart of the packaging process of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 2 a is one of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 2 b is the two of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 3 is the two of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 4 is the three of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 5 is the four of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 6 is the five of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 7 is the six of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 8 is the seven of the encapsulation process schematic diagram of composite LED glass base plane provided in an embodiment of the present invention；
Fig. 9 is the schematic diagram of composite LED glass base plane provided in an embodiment of the present invention.
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
Specific embodiment
The packaging process of composite LED glass base plane of the invention is mainly used for LED display, extra small spacing LED
Display screen, ultra high density LED display, the just luminous TV of LED, the just luminous monitor of LED, LED video wall, LED indication, LED
The fields such as special lighting.
Fig. 1 is the packaging process flow chart of composite LED glass base plane provided in an embodiment of the present invention.Fig. 2-Fig. 8
For the encapsulation process schematic diagram of the composite LED glass base plane of the embodiment of the present invention, each schematic diagram is only used to more fully understand this
The intention of invention, but be not intended to limit the scope of protection of the present invention.
Packaging process of the invention is illustrated with Fig. 1 and in conjunction with Fig. 2-Fig. 8 below.
As shown in Figure 1, the packaging process flow chart of composite LED glass base plane provided in an embodiment of the present invention includes
Following steps:
Step 110, glass substrate is prepared；
Specifically, glass substrate includes the matrix pit slot for being packed into multiple LED wafers.
Glass substrate can be specifically the through slot shape for opening rectangle or other shapes as required on the original sheet glass of well cutting
At glass substrate, preparation method is very simple.
As shown in Fig. 2 a or 2b, in the matrix pit slot of glass substrate 1, the size of each pit slot 11, depth, compartment away from
Equally.The cross sectional shape of pit slot 11 is rectangle (Fig. 2 a) or dove-tail form (Fig. 2 b).The bottom surface of pit slot 11 is finished to mirror transparent, hole
The side of slot 11 is rough surface.
Step 120, by multiple LED wafers according to design and layout at cell array；
Specifically, firstly, forming wafer matrix as shown in Figure 3 on multiple LED wafer reverse moulds to expanded film.Chip
In matrix, arranged at equal intervals between each LED wafer 2.Expanded film 3 and the light-emitting surface of LED wafer 2 are mutually pasted.
LED wafer can be monochromatic LED chip, also may include multi-colored led chip.
In the case where multi-colored led chip, the LED wafer of different colours is firstly the need of being tested, according to not
It is grouped with multiple LED wafers of the test result to each color, then arranges and place further according to needs.Shown in Fig. 3
It is row's red LED chip (being indicated in figure with R), row's green LED chip (being indicated in figure with G), row blue in example
LED wafer (is indicated in figure with B).
Then, expanded film is stretched, the wafer matrix is carried out to expand crystalline substance, forms the cell array, as shown in Figure 4.?
In cell array, red LED chip, blue led chip and green LED chip are equidistantly arranged at equal intervals.Also, cell array
In multiple LED wafer positions and matrix pit slot position correspond.
Step 130, the barrier structure of matrix pit slot is made, and fills low glass powder into the matrix pit slot with barrier structure
Solution or transparent glass cream；
Specifically, can realize step 130 by two kinds of specific processes.
The first may include such as step 131 and step 132.
Step 131, glass substrate is placed in the master mold of heating and cooling system, is higher than the transparent of low glass powder with melting temperature
Glass cream cooperates limit mold to block the end of pit slot, forms the barrier structure；
Wherein, heating and cooling system 4 can be as shown in figure 5, include male model 41 and master mold 42.
Master mold 42 has heating tube 421 for loading glass substrate, bottom, can heat graphite by heating tube 421
422, to be heated by graphite 422 to glass substrate 1.Male model 41 has vacuum pump 411 and suction nozzle 412, on suction nozzle 412
Adsorb LED wafer 2.
Barrier structure can be as shown in fig. 6, the barrier structure 12 that in the end of pit slot 11 there is transparent glass cream to be formed.
Step 132, glass substrate loads appropriate low glass powder solution or transparent glass to 400 DEG C or more in pit slot
Cream.
Second may include such as step 133 and step 134.
Step 133, resistance bonding pretreatment is carried out to the bottom surface of the glass substrate, forms the barrier structure, retains institute
The side for stating pit slot is bonding face；
Step 134, the glass substrate is placed in the master mold for filling low glass powder melt or transparent glass cream, makes the square
Low glass powder solution or transparent glass cream are filled in battle array pit slot.
Wherein, the state of the molten material of the low glass powder of molten state or transparent glass cream 5 in pit slot 11 is as shown in Figure 7.
Step 140, it by the suction nozzle of the vacuum slot matrix die head on the male model of heating and cooling system, picks up the multiple
LED wafer, move to master mold opposite position, keep the light-emitting surface of the multiple LED wafer low in corresponding matrix pit slot
The molten material of glass powder combines；
Specifically, vacuum slot matrix die head is as shown in figure 8, multiple suction nozzles equidistantly arrange, in spacing and glass substrate
Spacing setting between matrix pit slot is identical.
Suction nozzle 412 is maintained under certain vacuum degree by vacuum pump 411, by LED wafer 2 by being drawn on expanded film 3
On suction nozzle 412.
Then the die head stepping of control male model 41 moves down, and coincide until with master mold 42.At this moment, the suction of 41 die head of male model
The light-emitting surface of LED wafer 2 on mouth 412 has been immersed in low glass powder melt or transparent glass cream.
Step 150, the heating and cooling system cooling is controlled, makes multiple LED wafer die bonds to corresponding matrix pit slot
In, obtain the composite LED glass base plane.
Specifically, keeping the temperature the several seconds after immersion, then beginning to cool, be down to room temperature.Low glass powder solution or transparent glass
Glass cream 5 is gradually solidified by molten state, makes 2 die bond of LED wafer into corresponding matrix pit slot 11, and suction nozzle 412 discharges, that is, is formed compound
LED glass base plane.It is specific as shown in Figure 9.
After completing above-mentioned each step, it is also necessary to the electrode of the LED wafer in the composite LED glass base plane
Side is polished directly, and the glutinous residue glue left may be glued from expanded film to remove.
Finally, composite LED glass base plane is annealed, after cleaning, drying, tested, and test is passed through
Composite LED glass base plane packed for standby use.
The packaging process of composite LED glass base plane provided by the invention, simple process are answered suitable for large-scale production
With, by using the cryogenic glass powder or transparent glass cream of melting as die bond medium so that its solidification after be it is transparent, will not
The hot spot for influencing light transmission is formed, the panel transmission being prepared is not less than 85%, and display effect and consistency are good, process costs
It is low, it can satisfy the needs that LED display technique is applied in high density field.
The composite LED glass base plane of the above method of the present invention preparation is the glass substrate with light-emitting LED chip, can be with
It is used as the integrated component of ultra high density LED display module or is individually used for the component of instrument display, process is integrated after component
In process upper opaque ITO driving circuit and can show video image character etc..
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (7)
1. a kind of packaging process of composite LED glass base plane, which is characterized in that the described method includes:
Glass substrate is prepared, the glass substrate includes the matrix pit slot for being packed into multiple LED wafers；In the matrix pit slot
The section of each pit slot is rectangle or dove-tail form；
By the multiple LED wafer according to design and layout at cell array, multiple LED wafer positions in the cell array with
The pit slot position of the matrix pit slot corresponds；
The barrier structure of matrix pit slot is made, and fills low glass powder solution into the matrix pit slot with barrier structure；
By the suction nozzle of the vacuum slot matrix die head on the male model of heating and cooling system, the multiple LED wafer is picked up, is moved to
With master mold opposite position, make the light-emitting surface of the multiple LED wafer in corresponding matrix pit slot low glass powder solution or thoroughly
Bright glass cream combines；
The heating and cooling system cooling is controlled, makes multiple LED wafer die bonds into corresponding matrix pit slot, obtains described multiple
Close LED glass base plane；
The barrier structure of the production matrix pit slot, and filling low glass powder solution is specific into the matrix pit slot with barrier structure
Include:
The glass substrate is placed in the master mold of the heating and cooling system, the transparent glass of low glass powder is higher than with melting temperature
Cream cooperation limit mold blocks the end of the pit slot, forms the barrier structure；
Glass substrate loads appropriate low glass powder solution to 400 DEG C or more in pit slot.
2. the method according to claim 1, wherein the bottom surface of the pit slot is finished to mirror transparent, pit slot
Side is rough surface.
3. the method according to claim 1, wherein it is described by the multiple LED wafer according to design and layout
It is packed into before the corresponding position of the matrix pit slot further include:
Prepare LED wafer；
LED wafer is tested, to be grouped according to different test results to the LED wafer；
Wafer matrix will be formed on the LED wafer reverse mould to expanded film；The light-emitting surface phase of the expanded film and the LED wafer
It pastes；
The expanded film is stretched, the wafer matrix is carried out to expand crystalline substance, forms the cell array.
4. the method according to claim 1, wherein the LED wafer includes multi-colored led chip.
5. according to the method described in claim 4, it is characterized in that, the multi-colored led chip includes: red LED chip, blue
LED wafer and green LED chip；
In the cell array, the red LED chip, blue led chip and green LED chip are equidistantly arranged at equal intervals
Cloth.
6. the method according to claim 1, wherein the method also includes:
The electrode side of LED wafer in the composite LED glass base plane is polished directly；
The composite LED glass base plane is annealed；
After cleaning, drying, tested；
The composite LED glass base plane packed for standby use that test is passed through.
7. a kind of composite LED glass base plane prepared using any one of the claims 1-6 the method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510355325.6A CN106299039B (en) | 2015-06-24 | 2015-06-24 | A kind of packaging process and panel of composite LED glass base plane |
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|---|---|---|---|
| CN201510355325.6A CN106299039B (en) | 2015-06-24 | 2015-06-24 | A kind of packaging process and panel of composite LED glass base plane |
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| Publication Number | Publication Date |
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| CN106299039A CN106299039A (en) | 2017-01-04 |
| CN106299039B true CN106299039B (en) | 2018-12-21 |
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| CN110429079B (en) * | 2019-08-05 | 2021-01-05 | 广东良友科技有限公司 | Double-row array packaging light source structure and packaging method |
| CN110911543A (en) * | 2019-11-28 | 2020-03-24 | 南京百富润玻璃有限公司 | Manufacturing method of LED photoelectric display glass for large display screen |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102730974A (en) * | 2012-06-08 | 2012-10-17 | 王双喜 | Slurry for preparation of glass fluorescent layer used for LED encapsulation |
| CN102738353A (en) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led packaging structure |
| CN103855259A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | Led packaging method |
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2015
- 2015-06-24 CN CN201510355325.6A patent/CN106299039B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738353A (en) * | 2011-04-12 | 2012-10-17 | 国碁电子(中山)有限公司 | Led packaging structure |
| CN102730974A (en) * | 2012-06-08 | 2012-10-17 | 王双喜 | Slurry for preparation of glass fluorescent layer used for LED encapsulation |
| CN103855259A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | Led packaging method |
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