CN202405258U - Wafer level packaging structure for light emitting diode - Google Patents
Wafer level packaging structure for light emitting diode Download PDFInfo
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- CN202405258U CN202405258U CN2012200276658U CN201220027665U CN202405258U CN 202405258 U CN202405258 U CN 202405258U CN 2012200276658 U CN2012200276658 U CN 2012200276658U CN 201220027665 U CN201220027665 U CN 201220027665U CN 202405258 U CN202405258 U CN 202405258U
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Abstract
The utility model discloses a wafer level packaging structure for a light emitting diode, where the packaging structure comprises a borosilicate glass wafer and a substrate bonded with the borosilicate glass wafer. A spherical glass micro-cavity array is formed on the back of the borosilicate glass wafer and a space controlling bulge ring is formed on the front surface of the borosilicate glass wafer. The spherical glass micro-cavity array is encircled by the space controlling bulge ring. A light emitting diode chip is assembled on the substrate and is connected electrically with the external side through a conductive through hole or a surface lead. The light emitting diode chip is located in a sealed cavity formed by the spherical glass micro-cavity array and the substrate. The cavity is filled with silica gel. Fluorescent powder is coated on the inner surface of the spherical glass micro-cavity array or on the surface of the light emitting diode chip. The method can be carried out in wafer level so that the method is simple and low in cost.
Description
Technical field
The utility model relates to a kind of MEMS (microelectromechanical systems) encapsulation technology, relates in particular to a kind of wafer level package structure for LED.
Background technology
As lighting use; Powerful white light emitting diode (LED) is by scientific research and enterprise's extensive concern; Because light-emitting diode (LED) is in order to produce enough light intensity; Operating current will be tried one's best greatly, and operating current has brought stern challenge for greatly the heat dissipation problem of light-emitting diode (LED) encapsulation.So; Optical package structure through design white light emitting diode (LED); Improve its light emission rate; Can under certain electric current, obtain enough big light intensity, lens can be used to improve the collimation of light beam simultaneously, so must be useful on the lens that improve light emission rate in light-emitting diode (LED) encapsulating structure.The package lens structure will have good air-tightness simultaneously, because the chip affected by moisture can influence luminescent properties greatly.
The lens of encapsulation LED (LED) converge with beam collimation most important to emergent ray.The lens of present most of led chips are to process through a glue and plastic housing.The lens that wafer level prepares the LED encapsulation can save time, and reduce manufacturing cost.In the optical design of LED lens, led chip is most important to the bright dipping that encapsulates the back led chip with respect to the position (relative position of light source and lens focus) of lens, is a great problem in encapsulation light path design and the manufacturing.
Summary of the invention
The purpose of the utility model provides the wafer level package structure for LED that a kind of process is simple, cost is low.
The utility model adopts following technical scheme: a kind of wafer level package structure for LED; Comprise the Pyrex disk and and with the substrate of its bonding, the back side of Pyrex disk is formed with the spherical glass micro-cavity array, the front is formed with spacing control protruding ring; The spherical glass micro-cavity array be in spacing control protruding ring around in; Be assembled with light-emitting diode chip for backlight unit on the substrate, and be electrically connected with extraneous through conductive through hole or surface leads, light-emitting diode chip for backlight unit is in spherical glass micro-cavity and substrate forms in the closed cavity; Be filled with silica gel in this cavity, the fluorescent powder coated surface that perhaps is in light-emitting diode chip for backlight unit in the inner surface of spherical glass micro-cavity.
In the technique scheme; Spacing control protruding ring is provided with two breach; The part that spacing control protruding ring is in the spherical glass micro-cavity outside connects mutually; Be in the inboard part of spherical glass micro-cavity and also connect mutually, each microcavity in the spherical glass micro-cavity array is connected through the runner that is made up of spacing control protruding ring.Bond through conductive silver glue between substrate and the light-emitting diode chip for backlight unit.
A kind of preparation method of above-mentioned encapsulating structure may further comprise the steps:
The first step; Etching and light emitting diode matrix corresponding led lens mould micro slot array and on silicon wafer around the spacing of led lens mold slots control mould micro slot array; Led lens mould microflute is not communicated with spacing control mould microflute, places an amount of hot bubble release agent at led lens mould microflute;
Second step is with the silicon wafer after the etching and Pyrex disk anode linkage in a vacuum, formation seal chamber;
In the 3rd step, the disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air, and is incubated 0.5 ~ 10min; Hot bubble release agent produces gas because of decomposes; Make the melten glass corresponding to led lens mould microflute form spherical glass micro-cavity, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute and is formed spacing control protruding ring, is cooled to normal temperature; Annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit is mounted preparation to be had on the substrate of silicon conductive through hole and reflector;
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd;
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED;
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.
In the technique scheme, hot bubble release agent is a calcium carbonate powder.Be connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Be communicated with respectively between the spacing control mould micro slot array, make diode lens mould microflute be in connection spacing control mould micro slot array around among.Be connected through fluid channel between the said led lens mould microflute, diode lens mould microflute compares greater than 3:1 with the width of fluid channel, and spacing control mould micro slot array is in around the outside part of diode lens mould micro slot array and is communicated with.Said first step silicon wafer etching technics is a wet etching, and the degree of depth is the 20-100 micron.Said Pyrex are Pyrex7740 glass, and the condition of said anode linkage is: 400 ℃ of temperature, voltage: 600V.The process conditions of annealing are described in the 3rd step: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.In the 4th step, use conductive silver glue or tin cream that light-emitting diode chip for backlight unit (10) is mounted on the substrate (9) through the SMT technology.Glass ball cavity packaging body (5) and silicon wafer (9) the bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
The utility model obtains following effect:
1. the utility model is a kind of encapsulation process of wafer level, thereby has low cost, the simple advantage of method through spherical glass micro-cavity array package light-emitting diode chip for backlight unit.Adopt the glass micro-cavity structure to come the encapsulation LED chip, can make better tightness, chip and fluorescent material are not easy to receive the influence of humidity, therefore have high reliability features.The utility model also adopts spacing control protruding ring to control the distance between light-emitting diode chip for backlight unit and the spherical glass lens, and the light path of scalable light-emitting diode makes that design is more flexible, and method is simple.Spacing control protruding ring also has good sealing function, and is good with contacting of substrate, thereby can further increase the sealing of encapsulation, thereby improves reliability.
2. the utility model is through will be around the spacing protruding ring of light-emitting diode chip for backlight unit
3. form mutual disconnected led lens mould microflute and spacing control mould microflute through etching in the utility model; And optionally in led lens mould microflute, place the high temperature bubble release agent; Carry out in a vacuum then that anode is strong to be closed; Make it possible to utilize simultaneously malleation and negative pressure method on same glass wafer, to prepare spherical glass micro-cavity and spacing control protruding ring structure, thereby form the lens of the whole wafer level light-emitting diode of lens focus adjustable positions.This method can accurately be controlled the distance between led chip and the chip through the height of projection in the utility model, thereby can carry out flexible design according to the needs of optical design.The height of projection can be through silicon chip erosion degree of depth accurate and adjustable (can through the microelectronics dry method or cheaply wet etching realize), thereby realize the characteristic of LED lens focus position accurate and adjustable.It has not only increased the window of LED optical design, has improved the optical property that goes out of LED, and has increased the flexibility of encapsulation.
4. the utility model is through being connected through fluid channel between the led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Be communicated with respectively between the spacing control mould micro slot array, make diode lens mould microflute be in connection spacing control mould micro slot array around among, these technical measures; Realize the wafer level packaging of LED, and can realize the wafer level encapsulating.LED is in series through spacing control ring breach on silicon wafer; Projection on the prepared glass wafer is around led chip; Therefore after glass wafer and substrate silicon disk bonding; Can in passage, fill organic resin through one of them spacing control ring breach, another spacing control ring breach is used to get rid of gas, realizes no empty wafer level filling glue.It is simple to have method, the characteristics that cost is low.The width of spacing control ring breach is much larger than the size of the fluid channel between the diode lens, so the glueing channel size is bigger, and the encapsulating process can be carried out on disk easily, is not easy to stop up.Diode lens mould microflute compares greater than 3:1 with the width of fluid channel, makes diode lens glass forming process be more prone to; The size of fluid channel can the oversize LED of influence optical property owing to bearing bigger capillary inhibition; But can play the effect that connects LED lens glass chamber; Gas when making moulding in the lens glass chamber is communicated with, pressure is even, thereby spherical glass micro-cavity that can the compact dimensions high conformity.
5. the utility model is through with being connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel; Being in of spacing control mould micro slot array around the outside partially communicating measure of diode lens mould micro slot array; Make the spacing control ring join together, but inside but is not communicated with in lens periphery.Join together and spacing control ring outside forms the scheme surround to the LED spherical glass micro-cavity with respect to spacing control ring inside, can make in the process of encapsulating rapider, but its shortcoming is: if control the speed of bad encapsulating, form bubble easily.
6. the encapsulating structure skin of light-emitting diode (LED) chip is not epoxy resin or silica gel in the utility model; But the lens microcavity that has adopted Pyrex glass to make encapsulates; Because the Pyrex glassy phase, has good same photosensitiveness, high-temperature stability and sealing than organic material.The beam projecting rate of light-emitting diode (LED) chip of use glass lens microcavity encapsulation is higher like this, and operating current is bigger, and high-temperature resistance is strong, is difficult for
Aging, anti-moisture has been realized the more large-power light-emitting diodes of reliable and stable (LED) encapsulation.
7. glass lens encapsulation LED (LED) chip that use goes out in the utility model, glass lens be
Blow afloat wafer-level glass ball chamber under the effect of microcavity external and internal pressure; Smooth surface; Pyrex glass is for the percent of pass very high (> 90% of visible light simultaneously), so glass lens has very high beam projecting rate, and lens have the effect that focuses on visible light; The light beam visual angle of outgoing is less, can realize the collimation of light beam.In the utility model with led chip use conductive silver glue with chip attachment on the TSV silicon substrate, in pasting chip, realized the electric interconnects of chip positive electrode like this.
In the utility model based on the traditional MEMS processing technology; At first on the Si sheet, process microcavity and the fluid channel shallow slot structure of desiring moulding, specific regional filled high-temperature bubble release agent covers Pyrex7740 glass with anode linkage technology and forms airtight microcavity on this shallow slot; Heating makes glass melt then; The high temperature bubble release agent discharges gas, and gas is transferred in each microcavity through fluid channel, and chamber external and internal pressure official post gets melten glass and forms spherical microcavity of glass or glass micro-channel.According to the requirement of preparation microcavity and fluid channel, adjust the size ratio of microcavity and fluid channel, when microcavity and fluid channel size near the time; The suffered surface tension of microcavity and fluid channel is approaching during thermoforming; Moulding is highly approaching, and when microcavity size during much larger than fluid channel, the suffered surface tension of glass micro-channel is much larger than microcavity during thermoforming; Glass micro-channel is difficult to the cylindrical fluid channel of moulding; So can control their height through the size of control microcavity and fluid channel, highly lower after fluid channel is shaped, satisfying does not influence LED packaged glass lens performance when trickling silica gel.Because the glass channel and the microcavity surface of blowing are very smooth, so resistance is very little when injection is mixed with the silica gel of fluorescent material, can more smoothly silica gel be filled with whole wafer.Adopting the high temperature bubble release agent to release provides source of the gas to be used for spherical microcavity of formed glass and glass micro-channel, and it is low to have a cost, and method is simple, and moulding is highly high, the characteristics of good sphericity.
9. use the injection pusher of point gum machine in the utility model, because the adjustable in pressure of some glue can be regulated injection pressure and injection rate according to the injection process needs as phosphor powder layer silica gel.Here the silica gel that injects evenly is mixed with certain density fluorescent material, and after using point gum machine that silica gel is injected the cavity of wafer level, silica gel (phosphor powder layer) flows into each LED package cavity through fluid channel, can realize white light LEDs.The wafer level phosphor powder layer of having realized LED by this method applies, and has realized wafer level packaging simultaneously.
10. the temperature of anode linkage is 400 degrees centigrade usually; Thereby its normal temperature is 673K, and forming temperature is 850 deg.c, and normal temperature is about 1123K; The influence of the additional pressure that produces according to PV=nRT and surface tension; According to prior art, if the amount of gas is constant, volume after the expansion is not enough original two
Doubly, this shows the groove that needs etching darker.And the utility model has effectively solved this problem through introducing the high temperature bubble release agent, has avoided the complex process that groove brought and the expensive problem of high energy of etching high-aspect-ratio, can satisfy the requirement of led chip package cavity size.
Have very high intensity 11. be carved with the silicon chip of microflute and the anode linkage of glass in the utility model, the characteristics of good leak tightness are difficult for the generation leakage and cause the moulding failure in heating process.400 ℃ of temperature, under the bonding conditions of voltage direct current 600V, anode linkage can reach better sealing effectiveness.
12. in the 5th step; Adopt single channel to inject the method for silica gel; Can the gas in package cavity and the fluid channel be driven away fully and package cavity; Make the silica gel that is mixed with fluorescent material be full of the space between led chip and the glass micro-cavity fully, avoided the refracting interface that causes owing to the air gap, improved the light extraction efficiency of chip.
13. the annealing process that adopts in the utility model can effectively be eliminated Pyrex7740 glass and bear the stress that forms in the high temperature malleation forming process, thereby makes its strength and toughness higher.Annealing temperature is that temperature retention time is 30min in 550 ℃～570 ℃ scopes, slow then cool to room temperature.Under this condition, anneal; The stress of can effectively decorporating; Can also make the shape of microcavity not have change basically, and the too high encapsulation that is prone to cause the microcavity shape to change and is unfavorable for the road, back of annealing temperature, low excessively annealing temperature then can't effectively be removed the glass internal stress.
14. adopting concentration in the utility model is the silicon mould on 25% the TMAH solution removal glass lens microcavity, can remove silicon chip effectively like this and etching glass not, selects silicon chip, glass ratio to be about 2900:1.
15. the utility model prepares the Pyrex7740 glass suitable with the thermal coefficient of expansion of Si as the glass lens micro-cavity structure, because the coupling of the heat between silicon and the glass is fine, so encapsulation stress is little, and is very little for light-emitting diode (LED) influence.
Realize wafer-level glass ball chamber packaging body and the silicon wafer bonding that is loaded with light-emitting diode chip for backlight unit 16. use low temperature glass solder bonding or metal bonding or binding agent bonding in the utility model.
In MEMS manufacturing technology field; Use the MEMS micro-processing technology can on silicon chip, closely process circular microflute; Use Pyrex7740 glass (a kind of glass that contains alkali ion, Pyrex are the product brands of Corning company) under vacuum condition, to carry out bonding with the silicon chip that is carved with microflute (placing hot bubble release agent in the groove) then and realize sealing, heating and melting prepares glass lens; Because positive pressure; Discharge gas in the microcavity,, so just can prepare the good glass lens of light transmittance outside the chamber so glass lens is blown afloat; Flow in the groove at the suction function lower-glass simultaneously, form spacing control projection ring.Use glass lens can avoid above problem effectively, glass has very high percent of pass as inorganic material to visible light, and thermal stability is fine, can ageing failure, and humidity resistance is excellent.Because the passage that constitutes through the projection ring of connecting guides the silica gel that is mixed with fluorescent material to inject successively in the package cavity of led chip; The wafer level of having realized the white light LED fluorescent powder layer applies; Accomplished the LED wafer level packaging simultaneously; Compare existing some glue monolithic method for packing, improved efficient greatly and reduced cost.
Description of drawings
Fig. 1 is the silicon wafer microflute of the said encapsulating structure of preparation and the schematic top plan view of fluid channel (5:1)
Fig. 2 is the silicon wafer microflute of the said encapsulating structure of preparation and the cross sectional representation after the runner thermoforming
Fig. 3 is the cross sectional representation of the glass wafer behind the removal silicon mould
Fig. 4 the utility model encapsulating structure cross sectional representation.
Embodiment
Embodiment 1A kind of wafer level package structure for LED; Comprise the Pyrex disk and and with the substrate of its bonding, the back side of Pyrex disk is formed with the spherical glass micro-cavity array, the front is formed with spacing control protruding ring; The spherical glass micro-cavity array be in spacing control protruding ring around in; Be assembled with light-emitting diode chip for backlight unit on the substrate, and be electrically connected with extraneous through conductive through hole or surface leads, light-emitting diode chip for backlight unit is in spherical glass micro-cavity and substrate forms in the closed cavity; Be filled with silica gel in this cavity, the fluorescent powder coated surface that perhaps is in light-emitting diode chip for backlight unit in the inner surface of spherical glass micro-cavity.
In the technique scheme; Spacing control protruding ring is provided with two breach; The part that spacing control protruding ring is in the spherical glass micro-cavity outside connects mutually; Be in the inboard part of spherical glass micro-cavity and also connect mutually, each microcavity in the spherical glass micro-cavity array is connected through the runner that is made up of spacing control protruding ring.Bond through conductive silver glue between substrate and the light-emitting diode chip for backlight unit.
Embodiment 2The wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable may further comprise the steps:
The first step; The corresponding led lens mould of etching and light emitting diode matrix microflute 2 arrays and on silicon wafer 1 around the spacing of led lens mold slots 2 control mould microflute 3 arrays; Led lens mould microflute 2 is not communicated with spacing control mould microflute 3, places an amount of hot bubble release agent 4 at led lens mould microflute 2;
In second step,, form seal chamber with the silicon wafer after the etching 1 and Pyrex disk 5 anode linkage in a vacuum;
In the 3rd step, silicon wafer that above-mentioned bonding is good and Pyrex disk are heated to 820 ℃ ~ 950 ℃ in air, and are incubated 0.5 ~ 10min; Hot bubble release agent produces gas because of decomposes; Make the melten glass corresponding to led lens mould microflute 2 form spherical glass micro-cavity 6, spacing control mould microflute 3 inside and outside pressure official post melten glass are inserted spacing control mould microflute 3 and are formed spacing control protruding ring 7, are cooled to normal temperature; Annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit 8 is mounted preparation to be had on the substrate 9 of silicon conductive through hole and reflector;
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate 9 are bondd;
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up silica gel 10 through spacing control ring breach 71, and solidify, realize the wafer level packaging of light-emitting diode chip for backlight unit;
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity 6 after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.Hot bubble release agent (4) is a calcium carbonate powder.
Be connected through fluid channel 21 between the said led lens mould microflute 2; Diode lens mould microflute 2 compares greater than 3:1 with the width of fluid channel 21; Make diode lens mould microflute 2 be in connection spacing control mould microflute 3 arrays around among, be communicated with respectively inside and outside between spacing control mould microflute 3 arrays.
Be connected through fluid channel 21 between the said led lens mould microflute 2; Diode lens mould microflute 2 compares greater than 3:1 with the width of fluid channel 21, and being in around the outside part of diode lens mould microflute 2 arrays of spacing control mould microflute 3 arrays is communicated with.First step silicon wafer etching technics is a wet etching, and the degree of depth is the 20-100 micron.Said Pyrex are Pyrex7740 glass, and the condition of said anode linkage is: 400 ℃ of temperature, voltage: 600V.The process conditions of annealing are described in the 3rd step: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.In the 4th step, use conductive silver glue or tin cream that light-emitting diode chip for backlight unit 10 is mounted on the substrate 9 through surface installation technique.The wafer-level encapsulation method of the light-emitting diode that lens focus according to claim 1 is adjustable; It is characterized in that glass ball cavity packaging body 5 and the silicon wafer 9 bonding employing low temperature glass solder bondings or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
Embodiment 3A kind of preparation method of wafer level package structure for LED; May further comprise the steps: the first step; Etching and light emitting diode matrix corresponding led lens mould micro slot array and on silicon wafer around the spacing of led lens mold slots control mould micro slot array; Led lens mould microflute is not communicated with spacing control mould microflute, places an amount of hot bubble release agent at led lens mould microflute; Lithographic method can adopt dry method or wet etching, can adopt 4 inches silicon chips, and hot bubble release agent can adopt calcium carbonate; The weighing of powder is as the criterion with the gas flow of the glass micro-cavity volume needs of moulding required size, for example, and for 4 inches silicon chips; Width is the groove of 50 microns of 500 microns, the degree of depth, and the number of groove is 500, needs moulding hemisphere glass micro-cavity; The amount of the calcium carbonate that uses is 10 milligrams, and calcium carbonate can be concentrated and be placed in some grooves, also can be placed in a plurality of grooves; Be connected through fluid channel between the said led lens mould microflute; Diode lens mould microflute compares greater than 3:1 with the width of fluid channel, and spacing control mould micro slot array is in around the outside part of diode lens mould micro slot array and is communicated with
Second step is with the silicon wafer after the etching and Pyrex disk anode linkage in a vacuum, formation seal chamber; Vacuum degree can adopt the vacuum of 0.02Pa,
In the 3rd step, the disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air, and is incubated 0.5 ~ 10min; Hot bubble release agent produces gas because of decomposes; Make the melten glass corresponding to led lens mould microflute form spherical glass micro-cavity, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute and is formed spacing control protruding ring, is cooled to normal temperature (for example 25 degrees centigrade); Annealing is removed silicon and is obtained the LED package lens arra;
In the 4th step, light-emitting diode chip for backlight unit is mounted preparation to be had on the substrate of silicon conductive through hole and reflector; The position of silicon conductive through hole is corresponding with the assembling position of light-emitting diode, can be on silicon the etching microcavity, and carry out interconnectedly at its bottom preparation silicon through hole, reflector can use the reflector that inner sputtered aluminum forms in the silicon chamber of placing led chip,
The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd; Bonding can adopt epoxy resin, also can adopt silica gel to carry out the wafer level bonding,
The 6th step, in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED; Glue can adopt the commercial silica gel of refractive index match,
In the above-mentioned steps; The coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepared glass micro-cavity applies fluorescent material; Or after the 4th step chip attachment, fluorescent material is coated in chip surface, or in the silica gel of filling, evenly sneak into fluorescent material in the 6th step.
Embodiment 4A kind of wafer-level glass ball cavity encapsulation method of light-emitting diode may further comprise the steps:
The first step; Utilize the Si micro fabrication to go up with dry etching specific microflute and fluid channel pattern at Si disk (like 4 inches wafers); With the corresponding pattern of packaged led array: a. micro slot array; Be connected through fluid channel between the microflute, microflute is circular, and microflute and fluid channel size are adjusted than according to the preparation demand; B. spacing is controlled the mould microflute; In micro slot array, evenly place an amount of hot bubble release agent (CaCO
3); In second step, the above-mentioned Si disk that will have pattern and a hot bubble release agent and Pyrex7740 Pyrex disk anode anode linkage in air or in the vacuum seals above-mentioned microflute and fluid channel, the formation seal chamber; The 3rd step; The disk that above-mentioned bonding is good is heated to 820 ℃ ~ 950 ℃ in air; And be incubated 0.5 ~ 10min; Hot bubble release agent is because of decomposes produces the normal pressure that gas forms in airtight cavity, makes on melten glass, to form and corresponding spherical glass micro-cavity of said silicon microflute and the cylindrical glass fluid channel that is connected spherical glass micro-cavity; Glass with time interval control mould microflute top flow in the groove under suction function, forms spacing control protruding ring, and heat is but to normal temperature, and annealing obtains wafer-stage glass micro-cavity with 25% TMAH at 90 ℃ of conditions silica removal that goes down.In the 4th step, light-emitting diode (LED) chip attachment is had on the substrate of silicon conductive through hole (TSV) and reflector to preparation; The 5th step, wafer level bonding: said wafer-stage glass micro-cavity and substrate are bondd; The 6th step, in light-emitting diode (LED) chip and wafer-stage glass micro-cavity gap, fill up glue through spacing control ring breach, and solidify, realize the wafer level packaging of LED.
In the technique scheme, prepare said glass packages and adopt the positive pressure thermoforming method: wet etching forms the microcavity array of specific dimensions on silicon wafer, and in microcavity, puts into hot bubble release agent (like calcium carbonate); Above-mentioned silicon wafer and Pyrex7740 glass wafer are carried out bonding under vacuum condition, make glass wafer and above-mentioned specific pattern form seal chamber, the disk that bonding is good is heated to 820 ℃ ~ 950 ℃ under an atmospheric pressure; For example be chosen for 820 ℃, 850 ℃, 900 ℃; Insulation 3 ~ 8min for example can choose little: 4 min, 5 min; 6 min, the glass after chamber external and internal pressure official post is softening blows afloat outside seal chamber and forms the ball chamber, cooling; Stress relieving by annealing under normal pressure is removed mould silicon again, and formation is that microcavity, front are lenticular glass packages with the corresponding back side of above-mentioned microcavity patterning.Said bonding is an anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.In the 4th step, adopt conductive silver glue (the Ablebond 84-1LMISR4S of ablestik company mixes the conducting resinl of silver) that led chip is mounted on the TSV silicon substrate, condition of cure is: 175 ℃ of curing temperatures, curing time 45min.The coating method of fluorescent material is: in the silica gel of the 6th step filling, evenly sneak into fluorescent material.Evenly sneak into a certain amount of fluorescent material (YAG:ce3+) at silica gel (DOW CORNING), and use point gum machine to carry out wafer level silica gel and inject.In order to obtain good white light LEDs, the concentration of fluorescent material is respectively 2.0g/cm
3, 2.5 g/cm
3, 3.0 g/cm
3, 3.5 g/cm
3, 4.0 g/cm
3, 4.5 g/cm
3Glass packages and the silicon wafer bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode (LED) chip.
Said LED encapsulation scheme can adopt silicon through hole technology to go between in silicon chip back, promptly in the silicon chamber of placing silicon chip, punches, and metallization causes the back side through through hole with the electrode above the LED then; Also can on bonding face, make lead wire circuit, it is drawn.
Claims (3)
1. wafer level package structure for LED; It is characterized in that; Comprise Pyrex disk (5) and and with the substrate (9) of its bonding, the back side of Pyrex disk (5) is formed with spherical glass micro-cavity (6) array, the front is formed with spacing control protruding ring (7); Spherical glass micro-cavity (6) array be in spacing control protruding ring (7) around in; Be assembled with light-emitting diode chip for backlight unit (8) on the substrate (9), and be electrically connected with extraneous through conductive through hole or surface leads, light-emitting diode chip for backlight unit (8) is in spherical glass micro-cavity (6) and forms in the closed cavity with substrate (9); Be filled with silica gel (10) in this cavity, the fluorescent powder coated surface that perhaps is in light-emitting diode chip for backlight unit (8) in the inner surface of spherical glass micro-cavity (7).
2. wafer level package structure for LED according to claim 1; It is characterized in that; Spacing control protruding ring (7) is provided with two breach; The part that spacing control protruding ring (7) is in spherical glass micro-cavity (6) outside connects mutually, is in the inboard part of spherical glass micro-cavity and also connects mutually, and each microcavity in spherical glass micro-cavity (6) array is connected through the runner that is made up of spacing control protruding ring (7).
3. wafer level package structure for LED according to claim 1 is characterized in that, bonds through conductive silver glue between substrate (9) and the light-emitting diode chip for backlight unit (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200276658U CN202405258U (en) | 2012-01-20 | 2012-01-20 | Wafer level packaging structure for light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200276658U CN202405258U (en) | 2012-01-20 | 2012-01-20 | Wafer level packaging structure for light emitting diode |
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| Publication Number | Publication Date |
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| CN202405258U true CN202405258U (en) | 2012-08-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200276658U Expired - Fee Related CN202405258U (en) | 2012-01-20 | 2012-01-20 | Wafer level packaging structure for light emitting diode |
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| Country | Link |
|---|---|
| CN (1) | CN202405258U (en) |
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2012
- 2012-01-20 CN CN2012200276658U patent/CN202405258U/en not_active Expired - Fee Related
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120829 Termination date: 20130120 |