CN109980065A - White-light LED chip and preparation method thereof - Google Patents
White-light LED chip and preparation method thereof Download PDFInfo
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- CN109980065A CN109980065A CN201711441287.1A CN201711441287A CN109980065A CN 109980065 A CN109980065 A CN 109980065A CN 201711441287 A CN201711441287 A CN 201711441287A CN 109980065 A CN109980065 A CN 109980065A
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- Prior art keywords
- led chip
- white
- protective layer
- silica gel
- transparent silica
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000741 silica gel Substances 0.000 claims abstract description 38
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 38
- 239000011241 protective layer Substances 0.000 claims abstract description 33
- 239000003292 glue Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000012528 membrane Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 3
- 241001025261 Neoraja caerulea Species 0.000 claims 1
- 239000005416 organic matter Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of White-light LED chips and preparation method thereof, comprising: metal electrode, blue LED flip chip, transparent silica gel, protective layer, high anti-glue and fluorescence diaphragm；Wherein, metal electrode is set to the lower surface of LED chip；Fluorescence diaphragm is set to the upper surface of LED chip, and the area of fluorescence diaphragm is greater than the area on LED chip surface；Transparent silica gel is set to LED chip surrounding in arcuation in fluorescence membrane surface；Protective layer is located at transparent silica gel surface；High anti-glue is set to LED chip and fluorescence diaphragm surrounding along protective layer.One layer of fine and close hard protective layer is prepared in the contact interface of transparent silica gel and high anti-glue; effectively volatile organic matter is stopped to enter LED chip through transparent silica gel; the technical issues of solution causes LED chip coloration to change by the residual of volatile organic matter; and then the optical issue that goes out of LED chip is solved, the white light that guarantee LED chip issues is uniform.
Description
Technical field
The present invention relates to semiconductor light-emitting-diode field, in particular to a kind of White-light LED chip and preparation method thereof.
Background technique
LED (Light Emitting Diode, light emitting diode) is that one kind can convert electrical energy into consolidating for visible light
The semiconductor devices of state, principle of luminosity are electroluminescence, i.e., on PN junction plus after forward current, free electron and hole-recombination
And shine, so that electric energy is directly converted into luminous energy.LED, especially white light LEDs, as a kind of new lighting source material quilt
Be widely applied, it has many advantages, such as, and reaction speed is fast, shock resistance is good, the service life is long, energy conservation and environmental protection and it is fast-developing, at present by
It is widely used in the fields such as beautification of landscape and indoor and outdoor lighting.
(1 is blue LED flip chip, and 2 be transparent silica gel, and 3 be fluorescence diaphragm, and 4 be supporting substrate, and 5 are as shown in Figure 1
High anti-glue), the upside-down mounting White-light LED chip of uniform in light emission in order to obtain, during the preparation process, can first LED chip all around
The bowl-shape transparent silica gel of one circle, fills high reflection glue on transparent silica gel surface again later.But due to transparent silica gel have it is ventilative
Property, incompatible volatile organic matter (Volatile Organic present in gasket materials, scaling powder of solid-state lighting device etc.
Compounds, VOC) chip surface can be entered through silica gel, and cannot volatilize and remain in transparent silica gel completely, lead to chip
Coloration variation, to influence the light output ability of chip.
Summary of the invention
In view of the above-mentioned problems, the present invention is intended to provide a kind of White-light LED chip and preparation method thereof, effectively solves existing skill
Chip volatile organic matter remained on surface influences the technical problem of light out in art.
In order to achieve the above objectives, technical solution provided by the invention is as follows:
A kind of White-light LED chip, comprising: metal electrode, blue LED flip chip, transparent silica gel, protective layer, high anti-glue
And fluorescence diaphragm；Wherein,
The metal electrode is set to the lower surface of the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and the area of the fluorescence diaphragm is greater than LED chip table
The area in face；
The transparent silica gel is set to the LED chip surrounding in arcuation in the fluorescence membrane surface；
The protective layer is located at the transparent silica gel surface；
The anti-glue of height is set to the LED chip and fluorescence diaphragm surrounding along the protective layer.
It is further preferred that the protective layer is prepared by hard material, hardness range is 5.5~6.5H.
It is further preferred that the protective layer with a thickness of 1~50 μm.
It is further preferred that the protective layer is prepared by butyl oxide.
It is further preferred that the fluorescence diaphragm is set to the upper surface of the LED chip, and the area of the fluorescence diaphragm
Greater than the area on LED chip surface, the fluorescence diaphragm is arranged along the center of the LED chip.
It is further preferred that the transparent silica gel be set in arcuation in the fluorescence membrane surface towards fluorescence diaphragm it is described
LED chip surrounding.
The present invention also provides a kind of White-light LED chip preparation methods, comprising:
Blue LED flip chip is arranged on supporting substrate；
Transparent silica gel is printed between adjacent LED chip and is solidified；
In transparent silica gel surface spraying protective layer and solidify；
Protective layer between adjacent LED chip is filled high anti-glue and is solidified；
Supporting substrate is removed, fluorescence diaphragm is arranged on LED chip surface；
Along Cutting Road cutting fluorescence diaphragm and high anti-glue, White-light LED chip is obtained.
It is further preferred that the protective layer is prepared by hard material, hardness range is 5.5~6.5H.
It is further preferred that the protective layer with a thickness of 1~50 μm.
It is further preferred that the protective layer is prepared by butyl oxide.
Volatile organic matter enters inside LED chip through transparent silica gel in order to prevent, in white light LEDs provided by the invention
In chip and preparation method thereof, one layer of fine and close hard protective layer is prepared in the contact interface of transparent silica gel and high anti-glue, effectively
Stop volatile organic matter to enter LED chip through transparent silica gel, solves to lead to LED chip color by the residual of volatile organic matter
The technical issues of degree changes, and then the optical issue that goes out of LED chip is solved, the white light that guarantee LED chip issues is uniform；Simultaneously
The appearance of chip, in use, no consideration matching materials, tin cream will not be influenced because of the remaining influence of volatile organic matter
Etc. factors influence, the scope of application is wider.
In addition, connecting surface equipped with arcuation transparent silica gel in blue LED flip chip and fluorescence diaphragm, it is filled in this
The anti-glue of height of bright Silica Surface equally shows arcuation, and the setting of the structure is so that the light that blue LED flip chip side issues
Reflecting back becomes effective light exports from light-emitting surface, to substantially increase the light extraction efficiency of White-light LED chip.
Further more, it is more equal that White-light LED chip provided by the invention has been provided simultaneously with hot spot compared to existing White-light LED chip
It is even, thermal conductivity is good, light emitting angle is small, the advantages such as at low cost, the convenience for substantially increasing the application range of LED and using, especially
It is the application field for requiring light emitting angle small, such as LED backlight field.
Detailed description of the invention
Fig. 1 is White-light LED chip structural schematic diagram in the prior art；
Fig. 2 is White-light LED chip structural schematic diagram in the present invention；
Fig. 3 to Fig. 7 is White-light LED chip preparation process schematic diagram of the present invention.
Identifier declaration in figure:
1- blue LED flip chip, 2- transparent silica gel, 3- fluorescence diaphragm, 4- supporting substrate, the anti-glue of 5- high, 6- protective layer,
7- electrode.
Specific embodiment
It is illustrated in figure 2 White-light LED chip structural schematic diagram provided by the invention, it can be seen from the figure that in the white light
It include: metal electrode, blue LED flip chip, transparent silica gel, protective layer, high anti-glue and fluorescence diaphragm in LED chip；Its
In, metal electrode is set to the lower surface of LED chip；Fluorescence diaphragm is set to the upper surface of LED chip, and the area of fluorescence diaphragm is big
Area in LED chip surface；Transparent silica gel is set to LED chip surrounding in arcuation in fluorescence membrane surface；Protective layer is located at saturating
Bright Silica Surface；High anti-glue is set to LED chip and fluorescence diaphragm surrounding along protective layer.
In the LED chip, protective layer is prepared by hard material, and the hard material solidify after hardness range be
5.5~6.5H, with a thickness of 1~50 μm, in one example, which is prepared by butyl oxide, is prepared in transparent silicon
Between glue and high anti-glue (high reflectance white glue), prevent in subsequent SMT (Surface Mount Technology, surface mount
Technology) patch when tin cream in the volatile materials such as scaling powder, activator pierced in transparent silica gel from pad bottom, be included in subsequent
Other incompatible volatile organic matters enter in transparent silica gel in illuminator in use, and transparent silica gel is caused to turn yellow
Or even the appearance of phenomena such as blackening.
In addition, the thickness range of metal electrode is 10~200 μm, and using plating or chemical plating in the LED chip
Method be formed in blue LED flip chip surface.Transparent silica gel is set to towards fluorescence diaphragm in arcuation in fluorescence membrane surface
LED chip surrounding, and along any side of LED chip, the altitude range of transparent silica gel is 10~150 μm, width range 10
~1000 μm.Fluorescence diaphragm is set to the upper surface of LED chip, and the area of fluorescence diaphragm is greater than the area on LED chip surface, glimmering
Light diaphragm is arranged along the center of LED chip, so that the light that blue LED flip chip side issues, which reflects back, becomes effective
Light is exported from light-emitting surface, to substantially increase the light extraction efficiency of White-light LED chip.
In one embodiment, it during preparing White-light LED chip, prepares and selects satisfactory glimmering first
Light diaphragm 3, in the electroplating surface copper electrode of blue LED flip chip 1.Later, by blue LED flip chip 1 with array manner
It is arranged on supporting substrate 4, suitable transparent silica gel 2, and 150 ° of bakings is printed between adjacent two blue LED flip chips 1
It is 2 hours roasting, make the transparent silica gel 2 of blue LED flip chip surrounded surface that lower cancave bowl shaped be presented, as shown in Figure 3.
Later, spraying upper a layer thickness on transparent silica gel surface (in other embodiments, can also spray thickness for 10 μm
Degree is 20 μm, 30 μm, 40 μm of equal thickness) it is in the hard material of liquid condition, heated baking or UV solidification, it becomes solid
State, as shown in Figure 4；Later, the high anti-glue 5 of protective layer filling between adjacent two blue LED flip chips 1, until
The height of high reflection glue 5 exceeds the height of copper electrode；Later, the high anti-glue of grinding is until exposing copper electrode, as shown in Figure 5；Later,
Electroless plating is carried out on 7 surface of copper electrode, as shown in Figure 6；Later, supporting substrate 4 is replaced (first by branch support group with fluorescence diaphragm 3
Plate 4 removes, then sticks fluorescence diaphragm 3), as shown in Figure 7；Later, along the ditch between adjacent two blue LED flip chips 1
Slot is cut, and the White-light LED chip that single high brightness single side as shown in Figure 2 goes out light is obtained.In another embodiment, exist
After groove cutting fluorescence diaphragm and high anti-glue between blue-light LED chip 1, further includes: expand between adjacent LED chip
Distance is placed on supporting substrate；High anti-glue is filled between adjacent LED chip and is solidified；Ditch between adjacent LED chip
Slot is cut, and White-light LED chip is obtained.
In other embodiments, during preparing White-light LED chip, first fluorescence diaphragm 3 can also be placed on
Blue LED flip chip 1 is arranged in fluorescence diaphragm 3 later with array manner by supporting substrate 4, is being filled with high anti-glue 5 in this way
Directly remove supporting substrate 4 later, carrying out cutting can be obtained White-light LED chip.
Claims (10)
1. a kind of White-light LED chip, which is characterized in that include: metal electrode, upside-down mounting blue-ray LED core in the White-light LED chip
Piece, transparent silica gel, protective layer, high anti-glue and fluorescence diaphragm；Wherein,
The metal electrode is set to the lower surface of the LED chip；
The fluorescence diaphragm is set to the upper surface of the LED chip, and the area of the fluorescence diaphragm is greater than LED chip surface
Area；
The transparent silica gel is set to the LED chip surrounding in arcuation in the fluorescence membrane surface；
The protective layer is located at the transparent silica gel surface；
The anti-glue of height is set to the LED chip and fluorescence diaphragm surrounding along the protective layer.
2. White-light LED chip as described in claim 1, which is characterized in that the protective layer is prepared by hard material, firmly
Degree range is 5.5~6.5H.
3. White-light LED chip as described in claim 1, which is characterized in that the protective layer with a thickness of 1~50 μm.
4. White-light LED chip as claimed in claim 2 or claim 3, which is characterized in that the protective layer is prepared by butyl oxide.
5. the White-light LED chip as described in claims 1 or 2 or 3, which is characterized in that the fluorescence diaphragm is set to the LED core
The upper surface of piece, and the area of the fluorescence diaphragm is greater than the area on LED chip surface, the fluorescence diaphragm is along the LED core
The center of piece is arranged.
6. the White-light LED chip as described in claims 1 or 2 or 3, which is characterized in that the transparent silica gel is in the fluorescent film
Piece surface is set to the LED chip surrounding in arcuation towards fluorescence diaphragm.
7. a kind of White-light LED chip preparation method, which is characterized in that include: in the White-light LED chip preparation method
Blue LED flip chip is arranged on supporting substrate；
Transparent silica gel is printed between adjacent LED chip and is solidified；
In transparent silica gel surface spraying protective layer and solidify；
Protective layer between adjacent LED chip is filled high anti-glue and is solidified；
Supporting substrate is removed, fluorescence diaphragm is arranged on LED chip surface；
Along Cutting Road cutting fluorescence diaphragm and high anti-glue, White-light LED chip is obtained.
8. White-light LED chip preparation method as claimed in claim 7, which is characterized in that the protective layer is by hard material system
Standby to form, hardness range is 5.5~6.5H.
9. White-light LED chip as claimed in claim 7, which is characterized in that the protective layer with a thickness of 1~50 μm.
10. White-light LED chip as claimed in claim 8 or 9, which is characterized in that the protective layer is prepared by butyl oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711441287.1A CN109980065A (en) | 2017-12-27 | 2017-12-27 | White-light LED chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711441287.1A CN109980065A (en) | 2017-12-27 | 2017-12-27 | White-light LED chip and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109980065A true CN109980065A (en) | 2019-07-05 |
Family
ID=67072244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711441287.1A Pending CN109980065A (en) | 2017-12-27 | 2017-12-27 | White-light LED chip and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114023828A (en) * | 2021-09-26 | 2022-02-08 | 佛山市顺德区蚬华多媒体制品有限公司 | Sensor and manufacturing method thereof |
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| CN204088369U (en) * | 2014-09-11 | 2015-01-07 | 杭州宇隆科技有限公司 | A kind of LED encapsulation structure |
| CN205004353U (en) * | 2015-09-10 | 2016-01-27 | 惠州雷通光电器件有限公司 | LED packaging structure and LED lamps and lanterns |
| CN106129231A (en) * | 2015-05-05 | 2016-11-16 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN208142212U (en) * | 2017-12-27 | 2018-11-23 | 晶能光电（江西）有限公司 | White-light LED chip |
-
2017
- 2017-12-27 CN CN201711441287.1A patent/CN109980065A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4904604B1 (en) * | 2011-02-17 | 2012-03-28 | 国立大学法人九州工業大学 | LED module device and manufacturing method thereof |
| CN204088369U (en) * | 2014-09-11 | 2015-01-07 | 杭州宇隆科技有限公司 | A kind of LED encapsulation structure |
| CN106129231A (en) * | 2015-05-05 | 2016-11-16 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN205004353U (en) * | 2015-09-10 | 2016-01-27 | 惠州雷通光电器件有限公司 | LED packaging structure and LED lamps and lanterns |
| CN208142212U (en) * | 2017-12-27 | 2018-11-23 | 晶能光电（江西）有限公司 | White-light LED chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114023828A (en) * | 2021-09-26 | 2022-02-08 | 佛山市顺德区蚬华多媒体制品有限公司 | Sensor and manufacturing method thereof |
| CN114023828B (en) * | 2021-09-26 | 2023-08-01 | 佛山市顺德区蚬华多媒体制品有限公司 | Sensor and manufacturing method thereof |
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